JP2011082388A - Spintronics device, and logical operation element - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a spintronics device high in charge current to spin current conversion efficiency, and capable of providing a high-intensity spin current. <P>SOLUTION: This spintronics device includes: a spin current generation region 30 having a first end face and a second end face facing each other, and formed of a nonmagnetic bipolar conductive metal wherein a hole and an electron have carrier densities and mobilities at comparable levels, and a hole coefficient is zero; a first main electrode 20 arranged on the first end face and formed of a ferromagnetic material for injecting spin-polarized holes into the spin current generation region 30; and a second main electrode 40 arranged on the second end face for injecting electrons into the spin current generation region 30. Holes and electrons are made to be transported in the same direction by Lorentz force, and charge of the holes and that of the electrons are neutralized with each other to provide the spin current. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a spintronic device using a spin current and a logical operation element using the spintronic device.

  The spin of electrons has only two values “upward” or “downward” in the spinor space. Many individual spins are all upward or downward, causing the material to be magnetic. In recent years, understanding of spin-dependent conduction phenomena born by utilizing the characteristics of electron spin has progressed, and the development of spintronics devices that actively utilize the properties of electron spins has been rapidly developed in place of semiconductor devices that utilize the charge possessed by electrons. (See Patent Document 1). While the characteristics of conventional semiconductor devices are determined by the path or storage of charge, spintronic devices are determined by the quantum mechanical properties of the spins attached to them. In particular, spintronics devices that can process information with a large capacity and high speed have become targets for development. Recently, since the problem of leakage magnetic field and heat / energy loss can be reduced, spintronic devices using spin torque acting between conduction electron spins and localized electron spins have attracted attention, and magnetization direction control without using an external magnetic field. Technology is being established.

  “Spin-polarized current” with charge flow and “spin current” with no charge flow are known as the main roles for realizing this spintronic device. In a metal ferromagnet, the cause of spontaneous magnetization is due to the spin state of conduction electrons, so that a spin-polarized current is generated simply by passing a current. On the other hand, a phenomenon in which spin current is generated in the direction perpendicular to the current due to scattering due to spin-orbit interaction even when a current is passed through a non-magnetic material is known as the “Spin Hall effect”. In recent years, there has been a great deal of attention as a new spin current generation method (see Non-Patent Document 1). Here, the spin current refers to a magnetic moment transport phenomenon that involves movement of individual particles but does not involve charge transport.

  When a current is applied to a conductor to apply a magnetic field, the flowing electrons receive a Lorentz force perpendicular to the magnetic field, and the direction of motion is bent. This phenomenon is called the Hall effect and has been applied to various sensors in electronics. The spin Hall effect is caused not by the charge of the particle but by the angular momentum (spin) inherent to the particle. The spin of charged particles creates a magnetic field. The spin Hall effect is a phenomenon that is paired with the classical Hall effect. When an electric field is applied to a sample, the orbit of a particle having such a spin magnetic moment is bent in a direction perpendicular to the electric field. For example, the current flowing in a noble metal such as platinum (Pt) or gold (Au) contains 50% of 1/2 spin electrons and −1/2 spin electrons, respectively. When scattered by an action, the fact that 1/2 spin electrons and -1/2 spin electrons are scattered in opposite directions and accumulated opposite to each other is utilized. Electrons of 1/2 spin and -1/2 spin are accumulated opposite to each other at a certain distance, and as a result, there is no charge flow in the direction perpendicular to the flowing current direction due to the spin Hall effect. A pure spin current is generated.

  The current as a charge flow undergoes dissipation represented by the mean free path until carrier collision. On the other hand, since the spin current is not easily scattered when colliding with an electron impurity or phonon, the spin diffusion length is considerably longer than the mean free path, so that ballistic transport (ballistic transport) is relatively easy. Moreover, the stage of the spin current does not need to be a magnetic material, and may be a non-magnetic metal or a semiconductor, so that it can be applied to various electronic devices. However, since the spin-orbit interaction is two orders of magnitude weaker than the electrical interaction such as the Coulomb interaction, the scattering probability is low, and the current-spin current conversion efficiency due to the conventional spin Hall effect is low. Therefore, depending on the conventional spin Hall effect, it is difficult to obtain a high-intensity spin current, and the length that the spin current can be sustained is limited to about several hundred nm or less.

JP 2003-188390 A

L. Vila et al., “Evolution of the Spin Hall Effect in Pt Nanowires: Size and Temperature Effects”, Physical Review Letters (Phys. Rev. Lett.), Vol. 99, p. 226604 (2007)

  An object of the present invention is to provide a spintronics device that has a high current-spin current conversion efficiency and can obtain a high-intensity spin current, and a logical operation element using the spintronics device.

  In order to achieve the above object, according to a first aspect of the present invention, there is provided (a) a first end face and a second end face facing each other in parallel, and the first conductivity type carrier and the second conductivity type carrier are the same. A spin current generation region composed of a non-magnetic ambipolar conductive metal having a Hall coefficient of zero, and (b) a first end face; A first main electrode made of a ferromagnetic material that is provided and injects a spin-polarized first conductivity type carrier into the spin current generation region; and (c) a second conductivity type carrier that is provided on the second end face and spins the second conductivity type carrier. The gist of the invention is a spintronics device including a second main electrode to be injected into the generation region. In the spintronic device according to the first aspect, the first conductivity type carrier and the second conductivity type carrier are transported in the same direction by the Lorentz force of the magnetic field in the direction perpendicular to the plane perpendicular to the first end face. By deflecting, the charges of the first conductivity type carrier and the second conductivity type carrier cancel each other, and a spin current is obtained in the spin current generation region.

  In the second aspect of the present invention, (a) a first end face and a second end face facing each other in parallel with each other, the first conductivity type carrier and the second conductivity type carrier have the same carrier density and mobility. The spin current generation region made of a non-magnetic ambipolar conductive metal having a Hall coefficient of zero, and (b) provided on the first end face and spin polarized, A first main electrode made of a ferromagnetic material for injecting the first conductivity type carrier into the spin current generation region; and (c) a second main electrode provided on the second end face and injecting the second conductivity type carrier into the spin current generation region. The gist of the invention is a logical operation element including an electrode and (d) a detection electrode made of a ferromagnetic material provided on the output side surface of the spin current generation region orthogonal to the first end face. In the logic operation element according to the second aspect, both the first conductivity type carrier and the second conductivity type carrier are directed toward the output side surface by the Lorentz force of the magnetic field in the direction perpendicular to the plane perpendicular to the first end face. By deflecting so as to be transported, the charges of the first conductivity type carrier and the second conductivity type carrier cancel each other, the direction of magnetization of the detection electrode is set as an input signal, and the resistance between the first main electrode and the detection electrode is reduced. It is an output signal.

  According to a third aspect of the present invention, (a) a first end face and a second end face facing each other in parallel with each other, the first conductivity type carrier and the second conductivity type carrier have the same carrier density and mobility. The spin current generation region made of a non-magnetic ambipolar conductive metal having a Hall coefficient of zero, and (b) provided on the first end face and spin polarized, A first main electrode made of a ferromagnetic material for injecting a first conductivity type carrier into the spin current generation region; and (c) a spin-polarized second conductivity type carrier provided on the second end face in the spin current generation region. A logic operation element comprising a second main electrode made of a ferromagnetic material to be injected, and (d) a detection electrode made of a ferromagnetic material provided on the output side surface of the spin current generation region orthogonal to the first end face Is the gist. In the logic operation element according to the third aspect, both the first conductivity type carrier and the second conductivity type carrier are directed toward the output side surface by the Lorentz force of the magnetic field in the direction perpendicular to the plane perpendicular to the first end face. By deflecting so as to be transported, the charges of the first conductivity type carrier and the second conductivity type carrier cancel each other, and the magnetization direction of the first main electrode is set as the first input signal and the magnetization direction of the second main electrode. Is a second input signal, and a resistance between the first main electrode and the second main electrode is an output signal.

  ADVANTAGE OF THE INVENTION According to this invention, the spintronics apparatus with high electric current-spin current conversion efficiency and the high intensity | strength spin current can be obtained, and the logic operation element using this spintronics apparatus can be provided.

It is a mimetic diagram explaining the composition of the spintronics device concerning a 1st embodiment of the present invention. It is a table | surface which shows operation | movement of the spintronics apparatus which concerns on the 1st Embodiment of this invention. It is a schematic diagram explaining the structure of the spintronics apparatus which concerns on the 2nd Embodiment of this invention. It is a truth table explaining the state transition of the logic operation element which concerns on the 3rd Embodiment of this invention. It is a schematic diagram explaining the structure of the logical operation element which concerns on the 4th Embodiment of this invention. It is a truth table explaining the state transition of the logic operation element which concerns on the 4th Embodiment of this invention. It is a schematic diagram explaining the structure of the logical operation element which concerns on the 5th Embodiment of this invention. It is a truth table explaining the state transition which is the basis of the logic operation element which concerns on the 5th Embodiment of this invention. It is a schematic diagram explaining the structure of the logical operation element which concerns on the 6th Embodiment of this invention. It is a truth table explaining the state transition which is the basis of the logic operation element which concerns on the 6th Embodiment of this invention. It is a schematic diagram explaining the structure of the spintronics apparatus which can generate | occur | produce the high intensity | strength spin current based on the 7th Embodiment of this invention. It is a figure which shows typically momentum space in order to demonstrate a "Fermi surface." It is a table showing a comparison of the absolute value of the Hall coefficient R _H for various materials in the 295 K. Hydrogenation yttrium: is a graph illustrating the relationship between the Hall coefficient _{R H} and resistivity in 295K and 77K of _{(YH x 1.7 <x <2.1} ). It is a typical bird's-eye view explaining the schematic structure of the spin injection type light emitting diode (LED) which concerns on other embodiment of this invention. It is a typical bird's-eye view explaining the schematic structure of a spin injection type high electron mobility transistor (HEMT) according to still another embodiment of the present invention. It is a typical bird's-eye view explaining the structure of the outline of the logic integrated circuit which concerns on other embodiment of this invention.

  Next, first to seventh embodiments of the present invention will be described with reference to the drawings. In the following description of the drawings, the same or similar parts are denoted by the same or similar reference numerals. However, it should be noted that the drawings are schematic, and the relationship between the thickness and the planar dimensions, the ratio of the thickness of each layer, and the like are different from the actual ones. For example, in FIGS. 1, 3, 5, 7, and 9, the thickness (distance between the first end face and the second end face) measured in the vertical direction of each drawing of the spin current generation region 30 is For the sake of convenience, there is an exaggerated size for the sake of convenience, and in consideration of the spin diffusion length, there may be a preferred topology that is thinner than the illustration, so the relationship between the thickness and the planar dimensions is different from the actual one. It should be noted that you get. Therefore, specific thicknesses and dimensions should be determined in consideration of the following description. Moreover, it is a matter of course that portions having different dimensional relationships and ratios are included between the drawings.

  Also, the following first to seventh embodiments exemplify apparatuses and methods for embodying the technical idea of the present invention, and the technical idea of the present invention is the component parts. The material, shape, structure, arrangement, etc. are not specified below. The technical idea of the present invention can be variously modified within the technical scope described in the claims.

(First embodiment)
As shown in FIG. 1, the spintronics device according to the first embodiment of the present invention has the same carrier density and mobility of the first conductivity type carrier and the second conductivity type carrier (electrons and holes). A rectangular parallelepiped spin current generating region 30 made of a non-magnetic ambipolar conductive metal having a Hall coefficient of zero, and is metallurgically bonded to an end face (first end face) of the spin current generating region 30 to form a ferromagnetic material A first main electrode 20 for injecting a spin-polarized current into the spin current generation region 30 and metallically bonded to an end face (second end face) facing the first end face in parallel with the non-magnetic conductor. The second main electrode 40, the first end face, and a detection made of a ferromagnetic material that is metallurgically bonded to the center of the side face (output side face) orthogonal to the second end face and has a smaller coercive force than the first main electrode 20 A spin current conversion element 10 having an electrode 50; Comprising a first main electrode 20 of the flow transducer 10 and the DC power supply 6 for applying a DC bias voltage between the second main electrode 40. In the present invention, “the Hall coefficient is zero” means that the Hall coefficient _RH is a small value of 1.5 × 10 ⁻¹¹ m ³ / C or less, and if “the Hall coefficient is zero” can be considered substantially. Good.

  The spintronics device according to the first exemplary embodiment includes a potential measuring unit such as a voltmeter (not shown) between the node N1 indicating the potential of the first main electrode 20 and the node N2 indicating the potential of the detection electrode 50. Furthermore, the spin current obtained by current-spin current conversion of the spin current conversion element 10 is detected by a change in voltage measured by the potential measuring means. That is, a change in resistance value between the first main electrode 20 and the detection electrode 50 is detected, and the presence / absence of a spin current that has undergone current-spin current conversion in the spin current generation region 30 is detected.

Show Hall coefficient _{R H} for various materials in 295K in FIG. 13, the material of the small value, such as the Hall coefficient _{R H} can be regarded as substantially zero at 1.5 × 10 ^-11 m ³ / C or less limited and Yes. As a material used for the spin current generation region 30 of the spintronic device according to the first embodiment, yttrium hydride (YH _x (1.7 <x <2.1) is suitable. As shown in FIG. At 295 K and 77 K, _if the specific resistance of YH _x is 6.0 × 10 ⁻⁷ Ωm or less, the Hall coefficient _RH of YH _x is 1.5 × 10 ⁻¹¹ m ³ / C or less. YH _x having an H / Y ratio in the range of 1.7 to 2.1 has almost the same lattice constant as the same crystal structure, and thus can be used as a material used for the spin current generation region 30. x = 2.0 stoichiometric YH _x close to composition, other preferred .YH _x on substantially regarded Hall coefficient and zero spin current generation region of the spintronic device according to the first embodiment as a material used for the 30, YH ₂ (yttrium two Motobakemono) hydrogenated scandium having electronic structures very similar (ScH _2: Scandium dihydride), lanthanum hydride (LaH _2: it is possible to employ lanthanum dihydride) rare earth hydride such like.

The “Fermi surface” represents the maximum value of kinetic energy that can be taken by conduction electrons in a solid in a momentum space as shown in FIG. If the positive and negative values of the Fermi surface curvature are distributed almost evenly and the average value of the curvature is zero, the first conductivity type carrier and the first carrier injected in the opposite directions in the plane perpendicular to the magnetic field Since the two-conductivity type carriers (electrons and holes) have an electron concentration N _e = hole concentration N _h and an electron mobility μ _e = hole mobility μ _h , the Lorentz force acts on the holes and electrons, respectively. The total charge carried in the direction (X direction) is offset.

  That is, if the average value of the curvature of the Fermi surface is substantially zero, the Hall coefficient is substantially zero, and the Hall voltage in the normal Hall effect disappears. For this reason, the force which a hole and an electron receive from a Hall electric field is lost, and the balance with the Lorentz force is lost. Therefore, holes and electrons injected in directions opposite to each other in a plane perpendicular to the magnetic field flow in the direction in which the Lorentz force works (X direction), and the flow of charge flowing in the direction in which the Lorentz force works (X direction) is 0. It becomes. At this time, if spin polarization is performed on holes or electrons in advance, a spin current directed in the direction of the Lorentz force (X direction) can be generated. Since such a spin current is generated in any region where a magnetic field can be applied, it has a feature that its sustained length can be set to any length from nanoscale to macroscopic scale.

In FIG. 1, the spin current generation region 30 applies a magnetic field B _{H in} a direction (Z direction) perpendicular to a plane formed by the first main electrode 20, the spin current generation region 30, the second main electrode 40 and the detection electrode 50. While if is illustratively shown being, in Figure 1, the first main electrode 20, if it is magnetized fixed electrode magnetization M _a fixed direction (Z-direction) parallel to the magnetic field B _H To do. Detection electrode 50 is configured as a magnetization free electrode which can have a freely magnetization M _C in either parallel or antiparallel (Z direction or -Z direction) to the magnetic field B _H. Because only the detection electrode 50 is to act as a reversible magnetization free electrode magnetization M _C by controlling the magnetic field B _IN, the first main electrode 20 a magnetization fixed electrode, the coercive force B _{C (A)} is, for example, more than about 300mT The detection electrode 50 is preferably composed of a ferromagnetic material having a coercive force B _C (C) of, for example, about 250 mT to about 280 mT. At this time, the materials, shapes, and sizes of the first main electrode 20 and the detection electrode 50 are selected so that | B _C (C) | <| B _C (A) |, and | B _C (C) | <| B _{IN | <| B C (a} ) | by applying to become such control field B _IN, changing only the magnetization M _C, to function as a free magnetic electrode, the first main electrode 20 as a magnetization fixed electrode Can function. For this reason, for example, the shape of the first main electrode 20 is a rectangular flat plate with an aspect ratio of about 1: 5, and the shape of the detection electrode 50 is a rectangular flat plate with an aspect ratio of about 1: 4. What is necessary is just to arrange | position so that a side may become parallel with respect to the magnetic field _BIN for control. In order to make the coercive force | B _C (C) | <| B _C (A) |, the planar pattern of the electrodes can be a parallelogram instead of a rectangle, and of course, it is adjusted by the composition of the alloy. It is also possible. The first main electrode 20 and the detection electrode 50 both preferably have a specific resistance of 1.0 × 10 ⁻⁶ Ωm or less. As a ferromagnetic material constituting the first main electrode 20 and the detection electrode 50, for example, Co _x Fe _y Ni _z (x = 0.2 to 0.7, y = 0.2 to 0.4, z = 0.1). Various ferromagnets including cobalt, iron, nickel alloys, etc. as in (0.2) can be used. When the first main electrode 20 and the detection electrode 50 are crystalline ferromagnets, the crystal axis orientation that is the easy axis of magnetization is the first end face of the spin current generation region 30 and the side face orthogonal to the first end face (output) It is preferable to select each so as to be perpendicular to the side surface. If the ferromagnet is cubic, the [100], [010], [-100], and [0-10] directions are the easy magnetization axes.

  As shown in FIG. 1, when a DC bias voltage is applied from the DC power source 6 with the first main electrode 20 of the spin current conversion element 10 as a cathode and the second main electrode 40 as an anode, a spin bias is applied to the first main electrode 20. Polarized electrons (first conductivity type carriers) are injected into the spin current generation region 30 and travel through the spin current generation region 30 in the direction toward the second main electrode 40 (−Y direction). Also, holes (second conductivity type carriers) are injected from the second main electrode 40 into the spin current generation region 30 and travel in the spin current generation region 30 in the direction toward the first main electrode 20 (Y direction). .

Spin-polarized electrons (first conductivity type carriers) injected from the first main electrode 20 and holes (second conductivity type carriers) injected from the second main electrode 40 are generated in the spin current generation region 30. The Lorentz force acting in the direction toward the detection electrode 50 (X direction) is received under the magnetic field _BH , and the curve proceeds in the direction toward the detection electrode 50 (X direction). When the mobility of electrons and holes is equal, the magnitude of the Lorentz force acting on each is equal, and when the number of holes and spin-polarized electrons toward the detection electrode 50 are approximately equal, the total charge carried by both carriers The amount becomes 0, and a spin current is generated in the spin current generation region 30 in the direction toward the detection electrode 50 (X direction).

As shown in the table of FIG. 2, the magnetization M _C of the detection electrode 50, if the magnetization M _A in the same direction as the first main electrode 20 (Z-direction), the spin in the vicinity of the center portion of the spin current generation region 30 Accumulation does not occur, and the resistance value between the first main electrode 20 and the detection electrode 50 does not change. At this time, the detection voltage V ₂ = V _UU between the nodes N1 and N2 is set (in FIG. 2, the magnetization in the Z direction is indicated by an upward arrow, and the −Z direction is indicated by a downward arrow). On the other hand, the magnetization M _C of the detection electrode 50, when the magnetization M _A direction opposite of the first main electrode 20 (-Z direction), if any spin current, spin accumulation near the center of the spin current generation region 30 As a result, the resistance value between the first main electrode 20 and the detection electrode 50 increases, and the detection voltage V ₂ = V _UD > V _{UU at} this time is _satisfied , so that the presence or absence of the spin current can be determined. Incidentally, the magnetic field B _H magnetization M _A in the same direction (Z direction) of the first main electrode 20 serves to generate a Lorentz force acting on the carrier to prevent relaxation of the spin-polarized carriers.

By replacing the second main electrode 40 with a ferromagnetic metal, spin can be injected from the anode through the movement of the spin-polarized holes (second conductivity type carriers). At this time, the magnetic field B _H prevents relaxation of the injected hole spin, and causes a Lorentz force to act in a direction perpendicular to the hole injection direction (Y direction) (X direction), thereby generating a flow of hole spin. Let The flow rate of the spin current can be increased by combining the flow of the hole spin with the flow of the spin-polarized electron (first conductivity type carrier).

  The shape of the spin current generation region 30 is not limited to a rectangular parallelepiped, the first end surface and the second end surface are parallel, the output side surface is perpendicular to the first end surface and the second end surface, and the holes In addition, if the topology can secure a transport path in which the electrons change the trajectory in a circular arc shape by Lorentz force, the shape having a recess or a hole between the first end surface and the output side surface, or the second end surface and the output side surface Even a shape having a recess, a hole, or the like between them can be permitted as the spin current generation region 30 of the spintronic device according to the first embodiment.

(Second Embodiment)
The spintronics device according to the first embodiment shown in FIG. 1 has been exemplarily described with respect to the case where the bias voltage is DC, but the two detection electrodes 51a and 51b are sandwiched between the spin current generation region 30 as shown in FIG. By arranging in this way, it is possible to detect the spin current even when the bias voltage is an alternating current.

  That is, as shown in FIG. 3, the spintronic device according to the second embodiment of the present invention is a nonmagnetic material in which holes and electrons have the same carrier density and mobility, and the Hall coefficient is zero. A rectangular parallelepiped spin current generating region 30 made of a bipolar conductive metal and metallically bonded to the end face of the spin current generating region 30, made of a ferromagnetic material, and injecting a spin-polarized current into the spin current generating region 30. The first main electrode 20 and the end surface (second end surface) opposite to the end surface (first end surface) on which the first main electrode 20 of the spin current generation region 30 is disposed are metallurgically bonded, and from a non-magnetic conductor The second main electrode 40 and the central portion of one side surface (first output side surface) orthogonal to the end surface on which the first main electrode 20 of the spin current generation region 30 is arranged are metallurgically bonded, and the first main electrode A first ferromagnetic material having a coercive force smaller than 20. The detection electrode 51a is electrically short-circuited with the first detection electrode 51a, and is metallurgically joined to the other side surface (second output side surface) opposite to the first output side surface, and is identical to the first detection electrode 51a. A spin current conversion element 11 having a second detection electrode 51b made of a ferromagnetic material, and an AC power source 7 for applying an AC voltage between the first main electrode 20 and the second main electrode 40 of the spin current conversion element 11; Is provided.

The spin current generation region 30 is in a direction (Z direction) perpendicular to a plane formed by the first main electrode 20, the spin current generation region 30, the second main electrode 40, the first detection electrode 51a, and the second detection electrode 51b. A magnetic field B _H is applied. The holes and electrons injected into the spin current generation region 30 are generated by the Lorentz force acting in the direction (−X direction) toward the first detection electrode 51a by the AC current from the magnetic field B _H and the AC power source 7, the second The Lorentz force acting in the direction toward the detection electrode 51b (X direction) is alternately received.

If spintronic device according to a second embodiment, having a first main electrode 20 similarly to the spintronic device according to the first embodiment is, the magnetization M _A in the direction (Z-direction) parallel to the magnetic field B _H Will be exemplarily described. First detecting electrode 51a and the second detection electrode 51b has a magnetization M _C in the same direction, the direction of magnetization M _C is the control field, parallel or antiparallel to the magnetization M _A It can be set arbitrarily (free) in (Z direction or -Z direction).

  In the spintronics device according to the second embodiment, the node N2 that is drawn from the node N1, the first detection electrode 51a, and the second detection electrode 51b that indicate the potential of the first main electrode 20, and is joined to each other, Each is connected to a lock-in amplifier (lock-in amplifier) 9, and the voltage at the node N 3 is used as a reference signal for phase detection in the lock-in amplifier, and the change in the AC voltage between the nodes N 1 and N 2 is detected by the lock-in amplifier 9. By measuring, a change in the resistance value between the first main electrode 20 and the first detection electrode 51a and the second detection electrode 51b can be detected.

As described in the first embodiment, the magnetization M _C is the case of parallel to the magnetization M _A (Z-direction), the spin accumulation does not occur near the center of the spin current generation region 30, between the node N1-N2 The resistance value does not change. Magnetization M _C is the case of the magnetization M _A antiparallel (-Z direction), spin accumulation occurs in the vicinity of the center portion of the spin current generation region 30, the resistance value between the node N1-N2 is increased. Magnetization M _C, detection voltage V _{2 =} V _UU when the magnetization M _A is parallel, when the detection voltage V _{2 =} V _UD when antiparallel, when the spin current is generated spin stream generation region 30 Is V _UU <V _UD , and if no spin current is generated, the relationship V _UU = V _UD holds. Using this fact, the presence or absence of spin current can be determined.

  The shape of the spin current generation region 30 is not limited to a rectangular parallelepiped, the first end surface and the second end surface are parallel, the first output side surface is perpendicular to the first end surface and the second end surface, and the second output If the topology is such that the side surfaces are perpendicular to the first end surface and the second end surface and holes and electrons can change the orbit in a circular arc shape by Lorentz force, the first end surface and the first output side surface A shape having a recess or a hole between the second end surface and the first output side surface, a shape having a recess or a hole between the second end surface and the first output side surface, a recess or a hole between the second end surface and the second output side surface, etc. And various shapes such as a shape having a recess or a hole between the first end face and the second output side surface are allowed as the spin current generation region 30 of the spintronic device according to the second embodiment. Can be done.

(Third embodiment: NOT)
The spin current conversion element 10 according to the first embodiment shown in FIG. 1 can be used as a logical operation element that performs a predetermined logical operation in accordance with an input signal.

  For example, when the spin current conversion element 10 according to the first embodiment is a logic operation element according to the third embodiment of the present invention, the magnetization direction is set to input signals = 0, 1 and negation (NOT) is performed. It can be used as a NOT gate that outputs an output signal.

4, as a truth table of the logical operation device according to the third embodiment, the magnetization M _C of the detection electrode 50, parallel to the magnetization M _A of the first main electrode 20 (Z-direction: upward) If is defined as the input signal = 1, the magnetization M _C of the detection electrode 50, antiparallel to the magnetization M _a of the first main electrode 20 (-Z direction: downward) when is defined as the input signal = 0 ( In FIG. 4, the magnetization in the Z direction is indicated by an upward arrow, and the −Z direction is indicated by a downward arrow. Setting of the input signal = 0, i.e., the direction of the setting of the magnetization M _C of the detection electrode 50 may be used an external magnetic field.

If the spin injection magnetization reversal effect by spin injection into the detection electrode 50 is used instead of using an external magnetic field, the input signal = 0, 1 can be set by controlling the direction of magnetization without using a magnetic field. . When the spin injection magnetization reversal effect is used, the detection electrode 50 may have a structure in which a nonmagnetic thin film is sandwiched between a magnetic thin film and the magnetization arrangement (parallel / antiparallel) may be controlled by the direction of the applied high-density current. The spin injection magnetization reversal effect is caused by passing spin angular momentum to the other magnetic layer (spin transfer effect) when conduction electrons flow from one magnetic layer through the other magnetic layer. That is, the spin injection magnetization reversal effect reverses the magnetization direction by applying torque to the other magnetic layer. Alternatively, the detection electrode 50 is made of a III-V group magnetic semiconductor such as Ga _1-x Mn _x As, and the detection electrode 50 is irradiated with circularly polarized light to generate spin-polarized carriers, and the direction according to the spin polarization Alternatively, the magnetization may be rotated.

As shown in the truth table of FIG. 4, when the input signal is 1, the spin voltage generated in the spin current generation region 30 causes the output voltage V ₂ to accumulate spin near the center of the spin current generation region 30. does not occur, the resistance value between the node N1-N2 is not changed, the value of the output voltage V ₂ is at the low level (= 0). On the other hand, if the input signal is 0, the output voltage V ₂ is the spin current which is generated by the spin current generation region 30, since the spin accumulation occurs in the vicinity of the center portion of the spin current generation region 30, between nodes N1-N2 resistance value increases, the value of the output voltage V ₂ becomes a high level (= 1).

  As described above, the logical operation element according to the third embodiment of the present invention inverts the high level (= 1) input signal to output the low level (= 0) output signal, and outputs the low level (= 0). And an inverter (NOT gate) that outputs a high level (= 1) output signal.

Logical operation device according to the third embodiment, it is possible to hold the direction of magnetization of the input signal, until reversing the direction of magnetization M _C of the detection electrode 50, external to continue the detection electrode 50 A constant output is possible without applying a magnetic field.

(Fourth embodiment: XOR)
As shown in FIG. 5, the logical operation element 12 according to the fourth embodiment of the present invention is a nonmagnetic material in which holes and electrons have the same carrier density and mobility, and the Hall coefficient is zero. A rectangular parallelepiped spin current generation region 30 made of a bipolar conductive metal and a metallographically bonded end face of the spin current generation region 30 to inject a spin-polarized current into the spin current generation region 30. A first main electrode 22 that is a magnetization free electrode and a second main body that is metallurgically bonded to an end face of the spin current generation region 30 opposite to the end face where the first main electrode 22 is disposed, and is made of a non-magnetic conductor. From the ferromagnetic material having a coercive force smaller than that of the first main electrode 22, the electrode 40 is metallically bonded to the central portion of the side surface orthogonal to the end surface where the first main electrode 22 of the spin current generation region 30 is disposed. The detection electrode 50 is provided.

Logical operation element 12 according to the fourth embodiment, the magnetization M first input signal the direction of _A A = 0, 1 of the first main electrode 22, the second input signal the direction of magnetization M _C of the detection electrode 50 This is an XOR gate for setting C = 0, 1 and outputting an output signal of exclusive OR (XOR) as shown in the truth table of FIG.

In the spin current generation region 30, a magnetic field B _H is applied in a direction (Z direction) perpendicular to a plane formed by the first main electrode 22, the spin current generation region 30, the second main electrode 40, and the detection electrode 50. 5 and 6, the magnetization M _a of the first main electrode 22, the first input signal a in the case of the parallel and the magnetic field B _H (Z direction) and 1, when the anti-parallel (-Z direction) The first input signal A is set to 0. Similarly, the magnetization _{M C} of the detection electrode 50, a second input signal C in the case of the parallel to the magnetization _{M A} (Z-direction) 1, and the second input signal C to 0 in the case of antiparallel (-Z direction) (In FIG. 6, the magnetization in the Z direction is indicated by an upward arrow, and the −Z direction is indicated by a downward arrow.)

As shown in the truth table in FIG. 6, in the logical operation element 12 according to the fourth embodiment, when the first input signal A is 1 and the second input signal C is 1, the spin current generation region 30 the spin current in caused, since the spin accumulation does not occur near the center of the spin current generation region 30, the node resistance between N1-N2 is not changed, the value of the output voltage V ₂ is at a low level (= 0) become.

When the first input signal A is 1 and the second input signal C is 0, the spin current generated in the spin current generation region 30 causes spin accumulation near the center of the spin current generation region 30, and therefore the node N 1 resistance value increases between -N @ 2, the value of the output voltage _{V 2} becomes a high level (= 1).

When the first input signal A is 0 and the second input signal C is 1, spin-polarized electrons are injected downward (−Z direction) from the first main electrode 22 into the spin current generation region 30, and the spin polarization is injected. The poled electrons are holes injected from the second main electrode 40 and become a spin flow toward the detection electrode 50. Detection electrode 50, since they have magnetization M _C upward (Z direction), spin accumulation occurs in the vicinity of the center portion of the spin current generation region 30. Thus the resistance value between the node N1-N2 is increased, the value of the output voltage _{V 2} becomes high level (= 1).

When the first input signal A is 0 and the second input signal C is 0, electrons that are spin-polarized downward (−Z direction) are injected from the first main electrode 22 into the spin current generation region 30, and spins are generated. The polarized electrons are holes injected from the second main electrode 40 and become a spin flow toward the detection electrode 50. Detection electrode 50 downward so that a magnetization M _C of (-Z direction), the spin accumulation does not occur near the center of the spin current generation region 30, the value of the output voltage V ₂ is at a low level (= 0) It becomes.

(Fifth embodiment: NAND)
As shown in FIG. 7, in the logic operation element (13, R ₂ ) according to the fifth embodiment of the present invention, holes and electrons have the same carrier density and mobility, and the Hall coefficient is A rectangular parallelepiped spin current generation region 30 made of a nonmagnetic ambipolar conductive metal that is zero, is metallurgically bonded to the end face of the spin current generation region 30, and injects a spin-polarized electron current into the spin current generation region 30. The first main electrode (source electrode) 23, which is a magnetization free electrode made of a ferromagnetic material, and the end surface opposite to the end surface where the first main electrode 23 of the spin current generation region 30 is disposed are metallurgically bonded, A second main electrode (drain electrode) 43, which is a magnetization free electrode made of a ferromagnetic material, has a coercive force larger than that of one main electrode 23 and injects a spin-polarized hole current into the spin current generation region 30; The first main electrode 23 of the generation region 30 is disposed A spin current conversion element 13 having a detection electrode 53 that is a magnetization fixed electrode made of a ferromagnetic material that is metallurgically bonded to a central portion of a side surface orthogonal to the end surface and has a coercive force larger than that of the second main electrode 43; A direct current bias voltage V is applied between the output resistor R ₂ connected in series to the current conversion element 13 via the first main electrode 23, and one end of the output resistor R ₂ and the second main electrode 43. And a power source 6. Logical operation element (13, R ₂₎ is according to the fifth embodiment, by making the voltage across the output resistor R ₂ and the output voltage V _2, the direction of magnetization M _A of the first main electrode 22 a 1 input signal a = 0, 1, the direction of magnetization _{M B} of the second main electrode 43 as a second input signal B = 0, 1, obtained by inverting the truth table of the logical product (aND) shown in FIG. 8 it is a negative logical product (NAND) gate which outputs as an output voltage output signals from both ends of the output resistor R _2. In the AND truth table of FIG. 8, the magnetization in the Z direction is indicated by an upward arrow, and the −Z direction is indicated by a downward arrow.

A magnetic field B _H is applied to the spin current generation region 30 in a direction (Z direction) perpendicular to a plane formed by the first main electrode 23, the spin current generation region 30, the second main electrode 43, and the detection electrode 53. The holes and electrons injected into the spin current generation region 30 are subjected to Lorentz force acting in the direction toward the detection electrode 53 (X direction) by the magnetic field B _H and the DC bias from the DC power source 6.

The first main electrode 23, the direction of magnetization M _A optionally (freely) parallel or antiparallel to the magnetic field B _H (Z direction or -Z direction) can be set. The second main electrode 43 is arbitrary (free) can set the direction of magnetization M _B parallel or anti-parallel direction (Z direction or -Z direction) to the magnetization M _A. Detection electrode 53 fixes the direction of magnetization _{M C} antiparallel (-Z direction) relative to the magnetic field _{B H.} Magnetization M _A and the magnetization M _B is the control magnetic field applied from the outside, respectively, it is reversed direction.

Coercivity _B C of the first main electrode 23 (A), since the second main electrode 43 smaller than the coercive force _B C (B), the direction and the second input signal B of the magnetization _{M A} as a first input signal A to set the direction of magnetization M _B as, when applying a magnetic field to the first main electrode 23 and the second main electrode 43, a magnetic field for forming the magnetization M _B of a large coercive force the second main electrode 43 after applying, it is necessary to use a two-step process such as to apply a magnetic field to form a magnetization M _a of the first main electrode 23. At that time, as the direction of magnetization M _C of the detection electrode 53 is not inverted by the control magnetic field B _IN, it is necessary to set largest coercive force B _C of the detection electrode 53 _(C).

That is, the coercive force B _C (A) of the first main electrode 23 is, for example, about 240 mT or more and about 260 mT or less, and the coercivity B _C (B) of the second main electrode 43 is, for example, about 270 mT or more and about 290 mT or less. The coercive force B _C (C) of the ferromagnetic material and the detection electrode 53 is preferably composed of a ferromagnetic material of, for example, about 300 mT or more. The coercive force can be adjusted by making the planar pattern of each electrode with respect to the spin generation region 30 rectangular and changing its aspect ratio, or by making the planar pattern a parallelogram. It can also be adjusted by the composition of the alloy. In this _{case, | B C (B) |} <| B IN | <| B C (C) | and become such a control magnetic field B _IN applied, any direction of the magnetization _{M B} (free) after setting _{, | B C (a) |} <| B iN | <| B C (B) | a control magnetic field B _iN such that the applied, the direction of magnetization _{M a} may be optionally (freely) setting. Setting the direction of magnetization M _B of the direction and the second input signal B of the magnetization M _A as a first input signal A may be used an external magnetic field, it may be used spin injection magnetization reversal effect. The first main electrode 23, the second main electrode 43, and the detection electrode 53 preferably each have a specific resistance of 1.0 × 10 ⁻⁶ Ωm or less. As a material constituting the first main electrode 23, the second main electrode 43, and the detection electrode 53, for example, Co _x Fe _y Ni _z (x = 0.2 to 0.7, y = 0.2 to 0.4, z = 0.1 to 0.2), various ferromagnetic materials such as cobalt, iron and nickel alloys can be used.

In the logical operation element (13, R ₂ ) according to the fifth embodiment, when the first input signal A is 1 and the second input signal B is 1, it faces upward from the first main electrode (source electrode) 23. Electrons that are spin-polarized in the (Z direction) are injected into the spin current generation region 30, and holes that are spin-polarized upward from the second main electrode (drain electrode) 43 (Z direction) are generated in the spin current generation region 30. Although injected is, since the detection electrodes 53 are fixed in the direction of magnetization M _C downward (-Z direction), spin current which is generated by the spin current generation region 30 is less likely to flow into the detecting electrode 53, the spin Spin accumulation occurs near the center of the flow generation region 30. Therefore, the resistance between the first main electrode (source electrode) 23 and the second main electrode (drain electrode) 43 becomes high impedance (= 1) as shown in the truth table of FIG. Therefore, the output voltage V ₂ bias voltage V of the DC power supply 6 to be applied if a certain, to be measured as a voltage across the output resistor R ₂ between the one end and the second main electrode 43 of the output resistance R ₂ is It becomes low level (= 0).

On the other hand, when the first input signal A is 1 and the second input signal B is 0, electrons that are spin-polarized upward (in the Z direction) from the source electrode 23 are injected into the spin current generation region 30, and the drain electrode 43 While spin-polarized holes are injected into the spin current generation region 30 in a downward (-Z direction) from the detection electrodes 53 are fixed in the direction of magnetization M _C downwards, the spin current generation region 30 8 is difficult to flow to the detection electrode 53, but the spin-polarized hole current easily flows to the detection electrode 53. Therefore, the resistance between the source electrode 23 and the drain electrode 43 is the truth value of FIG. As shown in the table, the low impedance (= 0) is obtained. Therefore, if the bias voltage V of the DC power supply 6 is constant, the output voltage V ₂ across the output resistor R ₂ is a high level (= 1).

When the first input signal A is 0 and the second input signal B is 0, electrons that are spin-polarized downward (−Z direction) from the source electrode 23 are injected into the spin current generation region 30, and the drain electrode Although holes are spin-polarized from 43 downward (-Z direction) is injected into the spin current generation region 30, the detection electrode 53 are fixed in the direction of magnetization M _C downwards, spin current generation region Since both the spin-polarized electron current and the spin-polarized hole current generated at 30 are likely to flow to the detection electrode 53, the resistance between the source electrode 23 and the drain electrode 43 is as shown in the truth table of FIG. , Low impedance (= 0). Therefore, if the bias voltage V is constant, the output voltage V ₂ across the output resistor R ₂ is a high level (= 1).

Further, when the first input signal A is 0 and the second input signal B is 1, electrons that are spin-polarized downward (−Z direction) from the source electrode 23 are injected into the spin current generation region 30, and the drain electrode Although holes are spin-polarized from 43 upward (Z direction) is injected into the spin current generation region 30, the detection electrode 53 are fixed in the direction of magnetization M _C downwards, spin-polarized holes Although the current hardly flows to the detection electrode 53, the spin-polarized electron current easily flows to the detection electrode 53. Therefore, the resistance between the source electrode 23 and the drain electrode 43 is low impedance as shown in the truth table of FIG. (= 0). Therefore, if the bias voltage V is constant, the output voltage V ₂ across the output resistor R ₂ is a high level (= 1).

(Sixth embodiment: OR)
As shown in FIG. 9, in the logic operation element (13, R ₂ ) according to the sixth embodiment of the present invention, holes and electrons have the same carrier density and mobility, and the Hall coefficient is A rectangular parallelepiped spin current generation region 30 made of a nonmagnetic ambipolar conductive metal that is zero, is metallurgically bonded to the end face of the spin current generation region 30, and injects a spin-polarized electron current into the spin current generation region 30. The first main electrode (source electrode) 23, which is a magnetization free electrode made of a ferromagnetic material, and the end surface opposite to the end surface where the first main electrode 23 of the spin current generation region 30 is disposed are metallurgically bonded, A second main electrode (drain electrode) 43, which is a magnetization free electrode made of a ferromagnetic material, has a coercive force larger than that of one main electrode 23 and injects a spin-polarized hole current into the spin current generation region 30; The first main electrode 23 of the generation region 30 is disposed A spin current conversion element 13 having a detection electrode 53 that is a magnetization fixed electrode made of a ferromagnet having a coercive force larger than that of the second main electrode 43; A direct current bias voltage V is applied between the output resistor R ₂ connected in series to the current conversion element 13 via the first main electrode 23, and one end of the output resistor R ₂ and the second main electrode 43. And a power source 6. Logical operation device according to the sixth embodiment (13, R _2), by the voltage across the output resistor R ₂ and the output voltage V _2, the direction of magnetization M _A of the first main electrode 22 a 1 input signal a = 0, 1, the direction of magnetization _{M B} of the second main electrode 43 as a second input signal B = 0, 1, inverts the truth table of the indicated NOR in FIG 10 (NOR) a logical sum (OR) gate which outputs as an output voltage output signals from both ends of the output resistor R ₂ that. In the NOR truth table of FIG. 10, the magnetization in the Z direction is indicated by an upward arrow, and the −Z direction is indicated by a downward arrow.

In the spin current generation region 30, a magnetic field B _H is applied in a direction (Z direction) perpendicular to the plane formed by the first main electrode 23, the spin current generation region 30, the second main electrode 43, and the detection electrode 53. The holes and electrons injected into the spin current generation region 30 are subjected to Lorentz force acting in the direction toward the detection electrode 53 (X direction) by the magnetic field B _H and the DC bias from the DC power source 6.

The first main electrode 23, the direction of magnetization M _A optionally (freely) parallel or antiparallel to the magnetic field B _H (Z direction or -Z direction) can be set. The second main electrode 43 is arbitrary (free) can set the direction of magnetization M _B parallel or anti-parallel direction (Z direction or -Z direction) to the magnetization M _A. Detection electrode 53, that secures the direction of magnetization M _C parallel (Z-direction) to the magnetic field B _H is different from the fifth embodiment. Magnetization M _A and the magnetization M _B is the control magnetic field applied from the outside, respectively, it is reversed direction.

As described in the fifth embodiment, since the coercivity B _C (A) of the first main electrode 23 is smaller than the coercivity B _C (B) of the second main electrode 43, the first input signal to set the direction of magnetization M _B of the direction and the second input signal B of the magnetization M _a as a, when applying a magnetic field to the first main electrode 23 and the second main electrode 43, it size of coercive force after applying a magnetic field to form a magnetization M _B of the second main electrode 43, it is necessary to use a two-step process such as to apply a magnetic field to form a magnetization M _a of the first main electrode 23. At that time, as the direction of magnetization _{M C} of the detection electrode 53 is not inverted by the control magnetic field B _IN, it may be set largest coercive force _B C of the detection electrode _{53 (C), B C (} B) | _{<| B iN | <| B} C (C) | is applied to become such control field B _iN, any direction of the magnetization _{M B} (free) after _{setting, | B C (a) |} <| _{B iN | <| B C (} B) | a become such control field B _iN applied, the direction of magnetization _{M a} optionally may be (freely) setting.

In the logical operation element (13, R ₂ ) according to the sixth embodiment, when the first input signal A is 1 and the second input signal B is 1, it faces upward from the first main electrode (source electrode) 23. Electrons that are spin-polarized in the (Z direction) are injected into the spin current generation region 30, and holes that are spin-polarized upward from the second main electrode (drain electrode) 43 (Z direction) are generated in the spin current generation region 30. Although injected is, since the detection electrodes 53 are fixed in the direction of magnetization M _C upward (Z direction), the spin-polarized electron current and the spin-polarized hole current generated by the spin current generator region 30 Since both flow easily to the detection electrode 53, the resistance between the first main electrode (source electrode) 23 and the second main electrode (drain electrode) 43 is low impedance (= 0) as shown in the truth table of FIG. )become. Therefore, the output voltage V ₂ bias voltage V of the DC power supply 6 to be applied if a certain, to be measured as a voltage across the output resistor R ₂ between the one end and the second main electrode 43 of the output resistance R ₂ is Becomes high level (= 1).

On the other hand, when the first input signal A is 1 and the second input signal B is 0, electrons that are spin-polarized upward (in the Z direction) from the source electrode 23 are injected into the spin current generation region 30, and the drain electrode 43 While spin-polarized holes are injected into the spin current generation region 30 in a downward (-Z direction) from the detection electrodes 53 are fixed in the direction of upward magnetization M _C, spin current generation region 30 10 is difficult to flow to the detection electrode 53, but the spin-polarized electron current easily flows to the detection electrode 53. Therefore, the resistance between the source electrode 23 and the drain electrode 43 is the truth value of FIG. As shown in the table, the low impedance (= 0) is obtained. Therefore, if the bias voltage V of the DC power supply 6 is constant, the output voltage V ₂ across the output resistor R ₂ is a high level (= 1).

When the first input signal A is 0 and the second input signal B is 0, electrons that are spin-polarized downward (−Z direction) from the source electrode 23 are injected into the spin current generation region 30, and the drain electrode Although holes are spin-polarized from 43 downward (-Z direction) is injected into the spin current generation region 30, the detection electrode 53 are fixed in the direction of upward magnetization M _C, spin current generation region Since both the spin-polarized electron current and the spin-polarized hole current generated at 30 hardly flow to the detection electrode 53, the resistance between the source electrode 23 and the drain electrode 43 is as shown in the truth table of FIG. Furthermore, it becomes high impedance (= 1). Therefore, if the bias voltage V is constant, the output voltage V ₂ across the output resistor R ₂ becomes low level (= 0).

Further, when the first input signal A is 0 and the second input signal B is 1, electrons that are spin-polarized downward (−Z direction) from the source electrode 23 are injected into the spin current generation region 30, and the drain electrode 43 is spin-polarized holes are injected into the spin current generation region 30 in an upward (Z direction) from the detection electrodes 53 are fixed in the direction of upward magnetization M _C, spin-polarized electron current Is difficult to flow to the detection electrode 53, but since the spin-polarized hole current easily flows to the detection electrode 53, the resistance between the source electrode 23 and the drain electrode 43 is low impedance as shown in the truth table of FIG. (= 0). Therefore, if the bias voltage V is constant, the output voltage V ₂ across the output resistor R ₂ is a high level (= 1).

(Seventh embodiment)
As shown in FIG. 11, the spintronic device according to the seventh embodiment of the present invention is a non-magnetic bipolar device in which holes and electrons have the same carrier density and mobility, and the Hall coefficient is zero. A first rectangular parallelepiped first spin current generation region 34-1 and a first spin current generation region 34-1 which are metallurgically bonded to each other to convert a spin-polarized current into a first spin current A first first main electrode 24-1 made of a ferromagnetic material to be injected into the current generation region 34-1 and a first first main electrode 24-1 of the first spin current generation region 34-1 are disposed. A first second main electrode 44-1, which is metallurgically bonded to an end face opposite to the end face and made of a non-magnetic conductor, and a first first main electrode 24 of the first spin current generation region 34-1. -1 is a magnetized fixed electrode made of a ferromagnetic material, metallurgically bonded to the central portion of the side surface orthogonal to the end surface on which the -1 is disposed A first spin current conversion element 14-1 including a detection electrode 54-1; a first spin current generation region 34-1 and a first detection electrode 54-1. A rectangular parallelepiped first made of a non-magnetic ambipolar conductive metal, which is arranged in parallel with the spin current generation region 34-1 and has holes and electrons having the same carrier density and mobility and having a hole coefficient of zero. Metal spinally bonded to one end face of the second spin current generation region 34-2 and the second spin current generation region 34-2, and injects a spin-polarized current into the second spin current generation region 34-2. Metallurgy is formed on the end surface of the second first main electrode 24-2 made of a ferromagnetic material and the end surface of the second spin current generation region 34-2 opposite to the end surface where the second first main electrode 24-2 is disposed. The first second main electrode 44-2 made of a nonmagnetic conductor and the second first main electrode 24-2 in the second spin current generation region 34-2 A second spin current conversion element 14-2 provided with a second detection electrode 54-2 which is metallurgically bonded to a central portion of a side surface orthogonal to the arranged end face and which is a magnetization fixed electrode made of a ferromagnetic material; The first spin current generation region 34-1 and the second spin current generation region 34-2 are connected to the second spin current generation region 34-2 via the second detection electrode 54-2. The third spin current generation region 34 is a rectangular parallelepiped made of a nonmagnetic ambipolar conductive metal having holes and electrons having the same carrier density and mobility and having a hole coefficient of zero. -3, a third made of a ferromagnetic material that is metallurgically bonded to one end face of the third spin current generation region 34-3 and injects a spin-polarized current into the third spin current generation region 34-3. The first main electrode 24-3 and the end surface of the third spin current generation region 34-3 where the third first main electrode 24-3 is disposed are paired with each other. A first second main electrode 44-3 made of a non-magnetic conductor, and a third first main electrode 24-3 of the third spin current generation region 34-3. A third spin current conversion element 14-3 comprising a third detection electrode 54-3, which is metallurgically bonded to the central portion of the side surface orthogonal to the end face on which is disposed, and is a magnetization fixed electrode made of a ferromagnetic material. And the first spin current generation region so as to be connected via the (n-1) th spin current generation region (not shown) and the (n-1) th detection electrode (not shown). 34-1, the second spin current generating region 34-2, the third spin current generating region 34-3,..., The (n-1) th spin current generating region, and being arranged in parallel with the holes and electrons. Have the same carrier density and mobility, and a rectangular parallelepiped nth spin current generation region 3 made of a nonmagnetic ambipolar conductive metal having a Hall coefficient of zero -n, nth made of a ferromagnetic material that is metallurgically bonded to one end face of the nth spin current generation region 34-n and injects a spin-polarized current into the nth spin current generation region 34-n. The first main electrode 24-n and the end surface of the n-th spin current generation region 34-n opposite to the end surface where the n-th first main electrode 24-n is disposed are metallurgically bonded, The first second main electrode 44-n made of a plurality of conductors and a metal at the center of the side surface perpendicular to the end face where the n-th first main electrode 24-n of the n-th spin current generation region 34-n is disposed An n-th spin current conversion element 14-n including an n-th detection electrode 54-n which is a magnetically bonded and fixed magnetization electrode made of a ferromagnet; and a plurality of spins connected in multiple stages in this way in tandem Between the first main electrodes 24-1 to 24-n and the second main electrodes 44-1 to 44-n provided in the current conversion elements 14-1 to 14-n, respectively, And a DC power source 5 in parallel to apply a scan voltage to generate a spin current of high intensity.

As shown in FIG. 11, the plurality of spin current conversion elements 14-1 to 14-n connected in multiple stages in tandem are provided with the first main electrode 24-- respectively provided in the plurality of spin current conversion elements 14-1 to 14-n. 1 to 24-n, spin current generation regions 34-1 to 34-n, second main electrodes 44-1 to 44-n, and directions perpendicular to the plane formed by the detection electrodes 54-1 to 54-n (Z direction) when the magnetic field _{B H} is applied to the first main electrode 24-1 to 24-n has a direction of each magnetized _{M a} parallel (Z-direction) to the magnetic field _{B H,} the detection electrodes 54-1 to 54 -n has the directions of the respective magnetization M _C parallel (Z-direction) with respect to the direction of the magnetization M _a.

Both the first main electrodes 24-1 to 24-n and the detection electrodes 54-1 to 54-n can be preferably made of a ferromagnetic material having a coercive force of about 300 mT or more, and a specific resistance of 1.0. × 10 ⁻⁶ Ωm or less is preferable. As materials constituting the first main electrodes 24-1 to 24-n and the detection electrodes 54-1 to 54-n, for example, Co _x Fe _y Ni _z (x = 0.2 to 0.7, y = 0.2). Various ferromagnets such as cobalt, iron, nickel alloy such as -0.4 and z = 0.1-0.2 can be used.

  As shown in FIG. 11, the first main electrodes 24-1 to 24-n of the plurality of spin current conversion elements 14-1 to 14-n connected in multiple stages in tandem are cathodes, and the second main electrodes 44 are respectively. -1 to 44-n as anodes, when a DC bias voltage is applied from the DC power source 5 to each of the first main electrodes 24-1 to 24-n, electrons spin-polarized upward (Z direction) are It is injected into each of the spin current generation regions 34-1 to 34-n, and proceeds in the direction toward the second main electrodes 44-1 to 44-n in each of the spin current generation regions 34-1 to 34-n. . Also, holes are injected from the second main electrodes 44-1 to 44-n into the spin current generation regions 34-1 to 34-n, respectively, and in the respective spin current generation regions 34-1 to 34-n. In the direction toward the first main electrodes 24-1 to 24-n.

In each of the spin current generation regions 34-1 to 34-n, the upward main-polarized electrons (Z direction) injected from the first main electrodes 24-1 to 24-n and second main electrodes 44- The holes injected from 1 to 44-n receive the Lorentz force by the magnetic field _BH , and are directed from the first spin current conversion element 14-1 to the nth spin current conversion element 14-n (X In the direction (X direction) from the first spin current conversion element 14-1 to the nth spin current conversion element 14-n. Since the upward number of (Z direction) holes and upward (Z direction) to spin-polarized electrons toward the respective detection electrodes 54-1 to 54-n with a fixed direction of magnetization M _C are approximately equal, both the total amount of charge carriers carry can be considered 0 and each of the spin current generator region 34-1 to 34-n, the detection electrodes each having the magnetization M _C upward (Z direction) 54-1～54- A spin current is generated in the X direction toward n.

That is, electrons that are spin-polarized upward (Z direction) from the first first main electrode 24-1 and injected into the first spin current generation region 34-1 are transferred to the first detection electrode 54-1. since fixing the direction of magnetization M _C upward (Z direction), Nagarekomeru without the flow of charge to the first detection electrode 54-1. For this reason, in the second spin current generation region 34-2, the spin is polarized upward (Z direction) from the second first main electrode 24-2, and is injected into the second spin current generation region 34-2. The generated electrons and the spin current from the first spin current generation region 34-1 injected into the second spin current generation region 34-2 through the first detection electrode 54-1 are superimposed. Superimposed spin current, because the second detection electrode 54-2 is secured to the direction of magnetization M _C upward (Z direction), without a flow of charges to the second detection electrode 54-2 It can flow. For this reason, in the third spin current generation region 34-3, the spin is polarized upward (Z direction) from the third first main electrode 24-3 and injected into the third spin current generation region 34-3. And the first spin current generation region 34-1 and the second spin current generation region 34- injected into the third spin current generation region 34-3 via the second detection electrode 54-2. The spin current from 2 is superimposed. The superimposed spin current can flow into the third detection electrode 54-3 without any charge flow. Similarly, in the n-th spin current generation region 34-n, the n-th spin current generation region 34-n is spin-polarized upward (Z direction) from the n-th first main electrode 24-n to the n-th spin current generation region 34-n. The first spin current generation region 34-1 and the second spin current generation region 34-1 injected into the nth spin current generation region 34-n via the injected electrons and the (n-1) th detection electrode (not shown). The spin currents from the spin current generation region 34-2, the third spin current generation region 34-3,..., The (n-1) th spin current generation region (not shown) are superimposed. In this manner, the spin currents generated in the plurality of spin current generation regions 34-1 to 34-n connected in multiple stages in tandem are converted from the first spin current conversion element 14-1 to the nth spin current conversion. The intensity is gradually increased by superimposing the element 14-n. The high-intensity spin current is output from the n-th detection electrode 54-n of the n-th spin current conversion element 14-n to an external device (not shown).

In the spintronic device according to the seventh embodiment shown in FIG. 11, the first main electrodes 24-1 to 24-n provided respectively in the plurality of spin current conversion elements 14-1 to 14-n connected in multiple stages in tandem. the magnetization M _a of, since the magnetization M _B of the detection electrodes 54-1 to 54-n are respectively parallel to one another, not occur spin accumulation in all the spin current conversion device 14-1 to 14-n, the detection electrode The spin current can be superposed and amplified in tandem sequentially through 54-1 to 54-n to generate a high-intensity spin current without any charge flow.

The magnetic field B _H can bring about the Hall effect on the carrier and at the same time maintain the spin polarization of the carrier. By making each of the second main electrodes 44-1 to 44-n an electrode made of a ferromagnetic material, it is possible to generate a spin current having a higher intensity without a charge flow.

(Other embodiments)
As described above, the present invention has been described according to the first to seventh embodiments. However, it should not be understood that the description and drawings constituting a part of this disclosure limit the present invention. From this disclosure, various alternative embodiments, examples and operational techniques will be apparent to those skilled in the art.

  For example, in the first embodiment of the present invention, the spin current is electrically detected by the detection electrode 50 provided in the spin current generation region 30 shown in FIG. 1, but the detection electrode 50 is shown in FIG. Instead, a light emitting diode may be provided to detect the spin current optically from the output light of the light emitting diode. That is, the spin injection type light emitting diode according to another embodiment of the present invention shown in FIG. 15 includes a GaAs substrate 61, a p-type GaAs contact layer 62 provided on the GaAs substrate 61, and a GaAs contact layer 62. A p-type AlGaAs cladding layer 63 provided thereon, an i-type GaAs active layer 64 provided on the AlGaAs cladding layer 63, an n-type AlGaAs cladding layer 65 provided on the GaAs active layer 64, and an AlGaAs cladding. An n-type InGaAs contact layer 66 provided on the layer 65, a p-side ohmic electrode (anode electrode) 68 connected to the GaAs contact layer 62, and a spin current connected to the top of the convex portion formed by the InGaAs contact layer 66 Conversion element (30, 58, 59), and spin current conversion element (30, 58, 59) to I Injecting a spin current into the GaAs contact layer 66. The p-side ohmic electrode 68 exposes the p-type GaAs contact layer 62 at the bottom of a groove (recess) provided through the AlGaAs cladding layer 65, the active layer 64, and the AlGaAs cladding layer 63 from the surface of the InGaAs contact layer 66. The p-type GaAs contact layer 62 is in ohmic contact.

  As shown in FIG. 15, in the spin current conversion element (30, 58, 59), the holes and electrons have the same carrier density and mobility, and the nonmagnetic ambipolar conduction has a zero hole coefficient. A rectangular parallelepiped spin current generation region 30 made of metal, and a first main body made of a ferromagnetic material that is metallurgically bonded to the end face of the spin current generation region 30 and injects a spin-polarized hole current into the spin current generation region 30. The electrode 58 and the spin current generating region 30 are made of a ferromagnetic material that is metallurgically bonded to the end surface of the spin current generating region 30 opposite to the end surface where the first main electrode 58 is disposed and injects a spin-polarized electron current into the spin current generating region 30. A second main electrode 59 is provided, and a spin current is injected from the spin current generation region 30 into the InGaAs contact layer 66. For this reason, a DC power source 6 is connected between the first main electrode 58 and the second main electrode 59, and a DC bias voltage is applied by the DC power source 6. Each of the first main electrode 58 and the second main electrode 59 has an L shape, and is formed by an InGaAs contact layer 66 that is continuous with the carrier injection surface facing each other via the spin current generation region 30 and the carrier injection surface. And a pedestal portion provided on an insulating film 67 provided on the concave portion sandwiching the convex portion. For this reason, the first main electrode 58 and the second main electrode 59 are electrically insulated from the InGaAs contact layer 66 by the insulating film 67. A magnetic field is applied in a direction parallel to the main surface of the active layer 64 and parallel to the carrier injection surfaces of the first main electrode 58 and the second main electrode 59, and the spin-polarized holes from the first main electrode 58 The spin-polarized electrons from the two main electrodes 59 are injected into the spin current generation region 30, and the spin current is injected perpendicular to the plane that forms the top of the convex portion formed by the InGaAs contact layer 66. The main power supply 4 is connected between the second main electrode 59 and the p-side ohmic electrode 68, and the second main electrode 59 functions as an n-side ohmic electrode (cathode electrode) of the spin injection light emitting diode.

  The p-type AlGaAs cladding layer 63 constitutes the p side of the pin junction that forms the light emitting region. Further, impurities such as magnesium (Mg), beryllium (Be), and zinc (Zn) are added to make the p-type. The active layer 64 is a layer that forms a region that becomes the center of the light emitting region, and is a GaAs layer that is not intentionally doped with impurities, that is, a substantially intrinsic semiconductor layer. The n-type AlGaAs cladding layer 65 constitutes the n side of the pin junction that forms the light emitting region. Since the band gaps of the p-type AlGaAs cladding layer 63 and the n-type AlGaAs cladding layer 65 are determined to be larger than the band gap of the active layer 64, the amount of carriers injected into the active layer 64 is increased. , The emission intensity can be improved. According to the spin injection light-emitting diode according to another embodiment of the present invention, the spin current is injected from the spin current conversion element (30, 58, 59) into the InGaAs contact layer 66, so that the active layer 64 circularly polarizes. Can be extracted. For this reason, at least the magnetic field applied to the spin current generation region 30 and the bias voltage applied between the first main electrode 58 and the second main electrode 59 are injected by the spin current conversion element (30, 58, 59). By controlling one of them, the spin polarization degree of light included in the light output from the active layer 64 can be modulated. In the spin injection type light emitting diode, it is electrons injected into the active layer 64 that contribute to light emission. Therefore, when viewed as the operation of the light emitting diode itself, a spin accompanied by a flow of charge is not a pure spin current. Although the polarized current is the main component of the operation, the gist of the present invention can be understood from the viewpoint of the spin current conversion element (30, 58, 59) as the spin current injection element.

  As shown in FIG. 16, a spin injection high electron mobility transistor (HEMT) according to still another embodiment of the present invention includes a GaAs substrate 71, a GaAs buffer layer 72 provided on the GaAs substrate 71, , An InGaAs channel layer 73 provided on the GaAs buffer layer 72, an AlGaAs spacer layer 74 provided on the InGaAs channel layer 73, an n-type AlGaAs electron supply layer 75 provided on the AlGaAs spacer layer 74, An n-type GaAs contact layer 76 partially exposed by exposing part of the AlGaAs electron supply layer 75 on the AlGaAs electron supply layer 75, and a drain made of a ferromagnetic material in ohmic contact with the GaAs contact layer 76 The electrode 85 and the gate electrode 84 provided on the exposed portion of the AlGaAs electron supply layer 75 , Spin current conversion element connected to the InGaAs channel layer 73 (30,81,83) are formed. A degenerated two-dimensional electron layer is formed on the surface of the InGaAs channel layer 73 facing the interface between the InGaAs channel layer 73 and the AlGaAs spacer layer 74. Although not shown, the InGaAs channel layer 73 has a ridge shape in the left part of FIG. 16, and a part of the GaAs buffer layer 72 is exposed. An insulating film 86 is provided in the concave portions on both sides sandwiching the ridge-shaped convex portion (in FIG. 16, only the insulating film 86 on the near side is shown). The spin current conversion element (30, 81, 83) has a ridge-shaped ridge shape of the InGaAs channel layer 73 from the surface of the AlGaAs electron supply layer 75 to the bottom of a groove (concave) provided through the AlGaAs spacer layer 74. The top of the portion is exposed, and is formed in ohmic contact with the InGaAs channel layer 73 in the ridge shape portion. As shown in FIG. 16, in the spin current conversion element (30, 81, 83), holes and electrons have the same carrier density and mobility, and the nonmagnetic ambipolar conduction has a hole coefficient of zero. A rectangular parallelepiped spin current generation region 30 made of metal, and a first main electrode made of a ferromagnetic material that is metallurgically bonded to an end face of the spin current generation region 30 and injects a spin-polarized electron current into the spin current generation region 30 81, made of a ferromagnetic material that is metallurgically bonded to the end surface of the spin current generation region 30 opposite to the end surface where the first main electrode 81 is disposed, and injects a spin-polarized hole current into the spin current generation region 30. A second main electrode 83 is provided. A DC bias voltage is applied between the first main electrode 81 and the second main electrode 83 by the DC power supply 6. The first main electrode 81 and the second main electrode 83 each have an L shape (in FIG. 16, only the second main electrode 83 on the near side is shown to have an L shape), and each spin. A carrier injection surface facing through the flow generation region 30 and a pedestal portion provided on an insulating film 86 which is continuous with the carrier injection surface and sandwiches a ridge-shaped convex portion of the InGaAs channel layer 73 are provided. For this reason, the first main electrode 81 and the second main electrode 83 are electrically insulated from the InGaAs channel layer 73 by the insulating film 86 at portions other than the ridge-shaped portion formed by the InGaAs channel layer 73. A magnetic field is applied in a direction parallel to the main surface of the InGaAs channel layer 73 and parallel to the carrier injection surfaces of the first main electrode 81 and the second main electrode 83, and spin-polarized electrons from the first main electrode 81 2 Spin-polarized holes from the main electrode 83 are injected into the spin current generation region 30, and a spin current is injected perpendicular to the plane that forms the top of the ridge-shaped portion formed by the InGaAs channel layer 73. Spins are transported in the degenerate two-dimensional electron layer on the surface. The first main electrode 81 that injects spin-polarized electrons functions as a source electrode of the spin injection HEMT.

  In a spin injection HEMT according to still another embodiment of the present invention, if a time during which spins are transported in a degenerated two-dimensional electron layer is selected to be smaller than a spin inversion time (spin relaxation time), Can perform ballistic transport of spin. When electrons of upward spin are injected into the degenerated two-dimensional electron layer, the spin polarization passes through the degenerated two-dimensional electron layer without being relaxed for a certain lifetime, and the spin reaches the drain electrode 85. To do. If the magnetization of the drain electrode 85 is set upward, upward spin electrons can enter the drain electrode 85 from the InGaAs channel layer 73. This is the drain current. On the other hand, when the drain electrode 85 is magnetized downward, the upward spin electrons that have run through the degenerated two-dimensional electron layer are prevented from entering the drain electrode 85.

  Also, if the InGaAs channel layer 73 is relatively long, spin-polarized electrons injected into the degenerated two-dimensional electron layer are spun during transport through the degenerated two-dimensional electron layer due to the spin-orbit interaction caused by the interface electric field. The direction of can change. When electrons of upward spin are injected from the spin current conversion element (30, 81, 83) and the spin of the injected electrons changes by π, the transport is suppressed, and when the spin is rotated by 2π and returned to its original state, it can be transported. The rotation angle of the spin can also be controlled by the voltage of the gate electrode 84 and the gate electrode 84.

  Therefore, at least the magnetic field applied to the spin current generation region 30 by the spin injected by the spin current conversion element (30, 81, 83) and the bias voltage applied between the first main electrode 81 and the second main electrode 83 are at least. By controlling one of them, the degree of spin polarization transported through the degenerated two-dimensional electron layer and taken out from the drain electrode 85 can be modulated. In the spin injection type HEMT, it is the electrons transported in the degenerated two-dimensional electron layer that contribute to the amplification through the gate electrode 84. Therefore, when viewed as the operation of the HEMT itself, a pure spin current is not possible. The spin-polarized current accompanying the flow of charge is the main component of the operation, but the spin-current conversion element (30, 81, 83) as a spin-current injection element that injects the spin into the degenerated two-dimensional electron layer. The gist of the present invention can be understood from the viewpoint.

  The logic integrated circuit according to still another embodiment of the present invention shown in FIG. 17 includes a first spin current conversion element (30a, 81a, 83a) in the InGaAs channel layer 73 in the spin injection HEMT shown in FIG. This corresponds to a configuration in which the second spin current conversion elements (30b, 81b, 83b) are connected in parallel. As shown in FIG. 16, a degenerated two-dimensional electron layer is formed on the surface of the InGaAs channel layer 73 facing the interface between the InGaAs channel layer 73 and the AlGaAs spacer layer 74. In the left part of FIG. The InGaAs channel layer 73 has a ridge shape, a part of the GaAs buffer layer 72 is exposed, and an insulating film 86 is provided in the concave portions on both sides sandwiching the convex portion having the ridge shape. The first spin current conversion elements (30a, 81a, 83a) and the second spin current conversion elements (30b, 81b, 83b) are provided from the surface of the AlGaAs electron supply layer 75 through the AlGaAs spacer layer 74. The top of the convex portion forming the ridge shape of the InGaAs channel layer 73 is exposed at the bottom of the groove portion (concave portion), and is formed in ohmic contact with the InGaAs channel layer 73 in parallel at the ridge shape portion.

  As shown in FIG. 17, the first spin current conversion element (30a, 81a, 83a) has non-magnetic non-magnetic properties in which holes and electrons have the same carrier density and mobility, and the Hall coefficient is zero. A rectangular parallelepiped first spin current generation region 30a made of an ambipolar conductive metal is metallurgically bonded to the end face of the first spin current generation region 30a, and spin-polarized electron current is converted into the first spin current generation region 30a. The first first main electrode 81a made of a ferromagnetic material injected into the first spin electrode and the end surface of the first spin current generation region 30a opposite to the end surface where the first main electrode 81a is disposed are metallurgically bonded. And a first second main electrode 83a made of a ferromagnetic material that injects a spin-polarized hole current into the first spin current generation region 30a. A DC bias voltage is applied between the first first main electrode 81a and the first second main electrode 83a by the first DC power supply 6a. Each of the first first main electrode 81a and the first second main electrode 83a has an L shape (in FIG. 17, only the first second main electrode 83a on the near side has an L shape). Insulating film 86 that sandwiches a carrier injection surface that faces each other via first spin current generation region 30a, and a convex portion in which InGaAs channel layer 73 forms a ridge shape, which is continuous with this carrier injection surface. And a pedestal portion provided on the top. For this reason, the first first main electrode 81 a and the first second main electrode 83 a are electrically separated from the InGaAs channel layer 73 by the insulating film 86 at locations other than the ridge-shaped portion formed by the InGaAs channel layer 73. Insulated. As shown in FIG. 17, the second spin current conversion element (30b, 81b, 83b) is a non-magnetic element in which holes and electrons have the same carrier density and mobility, and the Hall coefficient is zero. A rectangular parallelepiped second spin current generation region 30b made of an ambipolar conductive metal is metallurgically bonded to the end face of the second spin current generation region 30b, and spin-polarized electron current is converted into the second spin current generation region 30b. The second first main electrode 81b made of a ferromagnetic material to be injected into the first spin electrode and the end surface of the second spin current generation region 30b opposite to the end surface where the second main main electrode 81b is disposed are metallurgically bonded. And a second second main electrode 83b made of a ferromagnetic material that injects a spin-polarized hole current into the second spin current generation region 30b. A DC bias voltage is applied between the second first main electrode 81b and the second second main electrode 83b by the second DC power supply 6b. Each of the second first main electrode 81b and the second second main electrode 83b has an L shape, and the carrier injection surface that faces each other via the second spin current generation region 30b, and the carrier injection surface The InGaAs channel layer 73 is continuously provided with a pedestal portion provided on the insulating film 86 sandwiching the ridge-shaped convex portion. For this reason, the second first main electrode 81b and the second second main electrode 83b are electrically separated from the InGaAs channel layer 73 by the insulating film 86 at locations other than the ridge-shaped portion formed by the InGaAs channel layer 73. Insulated.

The magnetic fields B ₁ and B ₂ are parallel to the main surface of the InGaAs channel layer 73, and the first first main electrode 81a, the first second main electrode 83a, the second first main electrode 81b, and the second second The two main electrodes 83b are applied in directions opposite to each other in a direction parallel to the respective carrier injection surfaces. During field B ₁ is applied, electrons spin-polarized from the first of the first main electrode 81a and holes that are spin-polarized from the first second main electrode 83a is injected into the first spin current generation region 30a Then, a spin current is injected perpendicularly to the plane forming the top of the ridge-shaped portion formed by the InGaAs channel layer 73, and the spin is transported through the degenerated two-dimensional electron layer on the surface of the InGaAs channel layer 73. When the magnetic field B _{2 is} applied in the direction opposite to the magnetic field B ₁ , the spin-polarized electrons from the second first main electrode 81 b are converted to the spin-polarized holes from the second second main electrode 83 b. The spin current is injected into the spin current generating region 30b and injected perpendicularly to the plane forming the top of the ridge-shaped portion formed by the InGaAs channel layer 73, and the spin transports in the degenerated two-dimensional electron layer on the surface of the InGaAs channel layer 73. Is done. The first first main electrode 81a for injecting spin-polarized electrons functions as the first source electrode of the logic integrated circuit, and the second first main electrode 81b for injecting spin-polarized electrons is , Functioning as the second source electrode of the logic integrated circuit.

Therefore, the first spin current conversion element during field _{B 1} is applied (30a, 81a, 83a) by injecting a spin into the first spin current generation region 30a from the magnetic field _{B 2} when applying the second spin current conversion device ( 30b, 81b, 83b) can be used to select the first source electrode or the second source electrode by injecting spins into the second spin current generation region 30b. It is possible to switch the input signal of the spin-polarized current being transported.

  Although not described in detail, the spin current conversion element of the present invention is applicable to a spin torque type magnetoresistive RAM, a spin transfer torque type oscillation element, a spin Seebeck effect element, a cooling element by spin current-heat flow conversion, and the like. It can be understood from the above description.

  As described above, the present invention naturally includes various embodiments not described herein. Therefore, the technical scope of the present invention is defined only by the invention specifying matters according to the scope of claims reasonable from the above description.

4 ... Main power supply 5,6 ... DC power supply 7 ... AC power supply 9 ... Lock-in amplifier 10,11,12,13,14-1-14-n ... Spin current conversion element 20,22,23,24-1-24 -n, 58, 81, 81a, 81b ... first main electrodes 30, 34-1 to 34-n ... spin current generation regions 40, 43, 44-1 to 44-n, 59, 83, 83a, 83b ... 2 main electrodes 50, 53, 54-1 to 54-n ... detection electrode 51a ... first detection electrode 51b ... second detection electrode 61, 71 ... GaAs substrate 62 ... contact layer 63 ... AlGaAs cladding layer 64 ... active layer 65 ... AlGaAs cladding layer 66 ... InGaAs contact layer 67,86 ... insulating film 68 ... p-side ohmic electrode 72 ... GaAs buffer layer 73 ... InGaAs channel layer 74 ... AlGaAs spacer layer 75 ... AlGaAs electron supply 76 ... GaAs contact layer 84 ... gate electrode 85 ... drain electrode

Claims (8)

A first end face and a second end face facing each other in parallel, the first conductivity type carrier and the second conductivity type carrier have the same carrier density and mobility, and the non-magnetic Hall coefficient is zero A spin current generation region composed of a bipolar conductive metal;
A first main electrode made of a ferromagnetic material provided on the first end face and injecting a spin-polarized first conductivity type carrier into the spin current generation region;
A second main electrode provided on the second end face and injecting a second conductivity type carrier into the spin current generation region, and by a Lorentz force of a magnetic field in a direction perpendicular to a plane perpendicular to the first end face. The first conductivity type carrier and the second conductivity type carrier are deflected so as to be transported in the same direction, and the charges of the first conductivity type carrier and the second conductivity type carrier cancel each other. A spintronics device characterized by that. Spintronic device according to claim 1, wherein the ambipolar conductivity metal is characterized by comprising the hydrogenated yttrium _{(YH x (1.7 <x <} 2.1).   A detection electrode made of a ferromagnetic material is further provided on an output side surface of the spin current generation region orthogonal to the same direction, and the spin current is measured by measuring a resistance between the first main electrode and the detection electrode. The spintronic device according to claim 1, wherein the presence of the spintronic device is detected.   The second main electrode is made of a ferromagnetic material, and the second conductivity type carrier spin-polarized from the second main electrode is injected into the spin current generation region. The spintronic device according to item 1. A first end face and a second end face facing each other in parallel, the first conductivity type carrier and the second conductivity type carrier have the same carrier density and mobility, and the non-magnetic Hall coefficient is zero A spin current generation region composed of a bipolar conductive metal;
A first main electrode made of a ferromagnetic material provided on the first end face and injecting a spin-polarized first conductivity type carrier into the spin current generation region;
A second main electrode provided on the second end face and injecting a second conductivity type carrier into the spin current generation region;
A detection electrode made of a ferromagnetic material provided on an output side surface of the spin current generation region perpendicular to the first end surface, and by a Lorentz force of a magnetic field in a direction perpendicular to the surface perpendicular to the first end surface, The first conductivity type carrier and the second conductivity type carrier are both deflected so as to be transported in the direction toward the output side surface, and the charges of the first conductivity type carrier and the second conductivity type carrier cancel each other, and the detection is performed. A logic operation element, wherein the direction of magnetization of the electrode is an input signal, and the resistance between the first main electrode and the detection electrode is an output signal.   The second main electrode is made of a ferromagnetic material, and a second conductivity type carrier spin-polarized from the second main electrode is injected into the spin current generation region, and the magnetization direction of the second main electrode is set to a second direction. The logic operation element according to claim 5, wherein the logic operation element is an input signal of A first end face and a second end face facing each other in parallel, the first conductivity type carrier and the second conductivity type carrier have the same carrier density and mobility, and the non-magnetic Hall coefficient is zero A spin current generation region composed of a bipolar conductive metal;
A first main electrode made of a ferromagnetic material provided on the first end face and injecting a spin-polarized first conductivity type carrier into the spin current generation region;
A second main electrode made of a ferromagnetic material provided on the second end face and injecting spin-polarized second conductivity type carriers into the spin current generation region;
A detection electrode made of a ferromagnetic material provided on an output side surface of the spin current generation region perpendicular to the first end surface, and by a Lorentz force of a magnetic field in a direction perpendicular to the surface perpendicular to the first end surface, The first conductivity type carrier and the second conductivity type carrier are both deflected so as to be transported in the direction toward the output side surface, and the charges of the first conductivity type carrier and the second conductivity type carrier are offset to each other. The direction of magnetization of one main electrode is a first input signal, the direction of magnetization of the second main electrode is a second input signal, and the resistance between the first main electrode and the second main electrode is an output signal. A logic operation element characterized by: The logic operation element according to claim 5, wherein the ambipolar conductive metal is yttrium hydride (YH _x (1.7 <x <2.1).

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