JP2011082260A5 - - Google Patents
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- JP2011082260A5 JP2011082260A5 JP2009231637A JP2009231637A JP2011082260A5 JP 2011082260 A5 JP2011082260 A5 JP 2011082260A5 JP 2009231637 A JP2009231637 A JP 2009231637A JP 2009231637 A JP2009231637 A JP 2009231637A JP 2011082260 A5 JP2011082260 A5 JP 2011082260A5
- Authority
- JP
- Japan
- Prior art keywords
- etching
- sio
- anisotropic
- sin
- proceed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Description
エッチング層２の材料としては、各種ドライエッチングに用いられるエッチング材料を用いることができる。これらのエッチング材料の中でも、エッチングを一方向（異方的）に進行させ、アスペクト比を向上させる観点から、Ｓｉ、ＳｉＯｘ１（ｘ１は、０＜ｘ１≦２である。）やＳｉＮｘ２（ｘ２は、０＜ｘ２＜０．７５である。）などの無機化合物から選ばれる材料を用いる。これらの中でもＳｉＯ２が好ましい。 As a material of the etching layer 2, an etching material used for various dry etchings can be used. Among these etching materials, Si, SiO x1 (x1 is 0 <x1 ≦ 2) and SiN x2 (x2) from the viewpoint of improving the aspect ratio by allowing etching to proceed in one direction (anisotropic). Is a material selected from inorganic compounds such as 0 <x2 <0.75. Among these, SiO 2 is preferable.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009231637A JP5466468B2 (en) | 2009-10-05 | 2009-10-05 | Dry etching method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009231637A JP5466468B2 (en) | 2009-10-05 | 2009-10-05 | Dry etching method |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011082260A JP2011082260A (en) | 2011-04-21 |
| JP2011082260A5 true JP2011082260A5 (en) | 2012-11-22 |
| JP5466468B2 JP5466468B2 (en) | 2014-04-09 |
Family
ID=44076030
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009231637A Active JP5466468B2 (en) | 2009-10-05 | 2009-10-05 | Dry etching method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5466468B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPWO2012133187A1 (en) * | 2011-03-25 | 2014-07-28 | Hoya株式会社 | Manufacturing method of nanoimprint mold and substrate manufacturing method |
| JP6529357B2 (en) * | 2015-06-23 | 2019-06-12 | 東京エレクトロン株式会社 | Etching method |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0855857A (en) * | 1994-08-15 | 1996-02-27 | Yamaha Corp | Working method of insulating film |
| JP2002217285A (en) * | 2001-01-15 | 2002-08-02 | Canon Inc | Manufacturing method of semiconductor device |
| JP2003151956A (en) * | 2001-11-19 | 2003-05-23 | Sony Corp | Etching method of silicon nitride film in manufacturing process of semiconductor device |
| US7291446B2 (en) * | 2004-03-17 | 2007-11-06 | Tokyo Electron Limited | Method and system for treating a hard mask to improve etch characteristics |
| CN101952093A (en) * | 2008-01-25 | 2011-01-19 | 旭化成株式会社 | Manufacturing method for seamless mold |
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2009
- 2009-10-05 JP JP2009231637A patent/JP5466468B2/en active Active
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