JP2011066247A - Charged particle beam lithography apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a charged particle beam lithography apparatus that achieves desired pattern dimension and pattern accuracy. <P>SOLUTION: An electron beam lithography apparatus 1 is composed of: a lithography chamber 5 which constitutes a vacuum chamber in which a stage 3, in which a sample 2 is laid, is arranged in a bottom part thereof; and an electronic lens tube 7 which has an electron gun 4 in an upper part and a magnetic lens 21 in a lower part. Electron beam from the electron gun 4 is controlled by a magnetic lens 21, while moving the stage 3, and the electron beam is irradiated to the sample 2, so that predetermined pattern is drawn. The magnetic lens 21 is composed of: a coil 30; a coil cooling plate 32 which surrounds the coil; an OLC shielding 35 which is arranged around the coil cooling plate 32 to shield the heat from the coil cooling plate; a magnetic pole 31 which is arranged around the OLC shielding 35; and an OL heat shield 44 which is arranged between the magnetic pole 31 and the sample 2 to shield the heat from the magnetic pole 31. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a charged particle beam drawing apparatus.

  In recent years, with the high integration of semiconductor integrated circuits, LSI (Large Scale Integration) patterns tend to become finer and more complicated. The wavelength of deep ultraviolet light used for pattern transfer is 193 nm, whereas the size of the pattern to be transferred is shorter than the wavelength. Along with this demand for miniaturization, the complexity of lithography technology is accelerating. However, in order to produce LSIs in large quantities, the lithography technology that can transfer the pattern drawn on the original mask onto the wafer requires a degree of freedom to change the design of the mask pattern that differs from product to product. It is. For this reason, the pattern writing on the mask uses the electron beam lithography technique used by the electron beam writing apparatus as before.

  The electron beam lithography technique has an essentially excellent resolution because the electron beam used is a charged particle beam. For this reason, the electron beam lithography technique is widely used also in the manufacturing site of a mask or a reticle that becomes an original when transferring an LSI pattern onto a wafer. Furthermore, an electron beam lithography apparatus that directly draws a pattern on a wafer using an electron beam lithography technique is applied to the development of state-of-the-art devices such as DRAMs, and is also used for the production of some ASICs. Yes.

  An electron beam lithography apparatus for realizing such an electron beam lithography technique usually includes a drawing chamber containing a stage on which a sample (mask substrate or wafer) to be drawn is placed, and a sample placed on the stage. And an electron column for irradiating an electron beam from an electron gun included in the above. The stage in the drawing chamber includes a guide and a stage driving motor as stage moving means for moving the stage.

  In addition, an electron beam optical system is configured in the electron column, and a deflector for performing desired drawing on the sample by controlling the shaping or position of the electron beam emitted from the electron gun. A plurality of types of components are provided. In particular, the lowermost part of the electron column is called an objective block and has a function of reducing the electron beam and forming an image on the sample.

  This objective block has a magnetic lens for imaging an electron beam. This magnetic lens is composed of a magnetic pole and a coil. When a current is passed through the coil, a magnetic field is generated between the magnetic poles and functions as a lens for an electron beam.

In such a drawing apparatus using an electron beam, in order to ensure drawing accuracy on a sample such as a mask substrate, it is necessary to control the temperature of the sample and its peripheral portion, in particular, to keep the temperature highly accurate.
That is, in the electron beam drawing apparatus, similarly to the sample itself such as a mask, the position measuring apparatus for controlling the stage for holding the sample with respect to the position of the electron beam is fixed or placed in the vacuum chamber. Therefore, temperature control of the electronic lens barrel is required.

  Among them, particularly for a sample such as a mask substrate, when a temperature distribution occurs in the entire sample, non-uniform expansion / contraction of the members constituting the sample occurs, resulting in deformation of the sample. In that case, the position of the electron beam measured with respect to the sample placed on the stage by the above-described position measuring device may cause an error due to the above-described sample deformation due to the temperature distribution, which affects the drawing accuracy. To do. That is, from such a viewpoint, it is necessary to suppress the temperature rise of the apparatus and perform precise temperature maintenance control, in particular, to keep the temperature of the sample and its peripheral part.

  Patent Document 1 discloses a pattern forming apparatus that can uniformize the temperature of a glass substrate as a sample during pattern drawing. The disclosed pattern forming apparatus holds a dummy mask containing a thermometer on an XY stage. Then, the XY stage is operated, and the temperature change of the dummy mask is measured by the thermometer. Thereafter, based on the measurement result of the temperature of the dummy mask, the set temperature of the thermostatic container arranged in the vicinity of the glass substrate is controlled independently of the drawing container.

JP 2003-195476 A

  The temperature distribution in the entire sample such as the mask substrate as described above may occur depending on the drawing pattern because the sample first generates heat due to the drawing work by the electron beam. However, although this phenomenon is unavoidable, it is not a dominant factor in the occurrence of temperature distribution on an actual sample. The main factor is the inflow of heat to the sample due to radiation from components of the drawing apparatus around the sample.

  In particular, the above-mentioned objective block at the bottom of the electron column is close to the sample on the stage and has a great influence on the sample. That is, the magnetic lens of the objective block is composed of the magnetic pole and the coil as described above, and generates a magnetic field by flowing current through the coil and functions as a lens. However, the coil generates heat by flowing current. In particular, the coil in the objective block is the coil that generates the largest amount of heat among the electron column, and the influence of such heat generation on the surroundings and the sample on the stage is very large.

  In such a charged particle beam drawing apparatus using a conventional electron beam, a countermeasure has been taken to absorb generated heat with cooling water through a cooling plate for a coil of an objective block that generates heat. However, even if the cooling plate is simply arranged, a temperature gradient is generated inside the cooling plate in the process of absorbing heat with the cooling water, and the temperature gradient may affect the temperature distribution in the sample. Therefore, in a conventional charged particle beam drawing apparatus using an electron beam, it has been difficult to achieve a constant temperature around the sample and to realize a uniform temperature distribution in the sample.

  Therefore, a conventional charged particle beam writing apparatus such as a conventional electron beam using a cooling method using a cooling plate or the like is insufficient to realize a desired pattern dimension and pattern accuracy in an electron beam writing apparatus. Development of a charged particle beam drawing apparatus is required.

  The present invention has been made in view of these points. That is, an object of the present invention is to provide a charged particle beam drawing apparatus capable of realizing a desired pattern dimension and pattern accuracy by enabling precise temperature adjustment and uniform temperature distribution in a sample such as a mask substrate. .

  Other objects and advantages of the present invention will become apparent from the following description.

A first aspect of the present invention includes a drawing chamber constituting a vacuum chamber in which a stage on which a sample is placed is arranged at the bottom;
A beam emitting means having an upper part and a beam irradiating means having a magnetic lens at the lower part;
A charged particle beam drawing apparatus that draws a predetermined pattern by irradiating a sample with a charged particle beam by controlling a charged particle beam from a beam emitting means with a magnetic lens while moving a stage,
The magnetic lens includes a coil, a coil cooling plate surrounding the coil, an OLC (Object Lens Coil) shield arranged around the coil cooling plate to shield heat from the coil cooling plate, and the OLC shield. It is characterized by having a magnetic pole arranged around and an OL (Object Lens) heat shield arranged between the magnetic pole and the sample and shielding heat from the magnetic pole. .

In the first aspect of the present invention, the coil cooling plate and the OLC shield are in contact at the ends,
The magnetic pole has a two-part structure consisting of an inner pole and an outer pole,
A coil cooling water path for absorbing heat from the coil cooling plate and the OLC shield, an outer pole cooling water path for absorbing heat from the outer pole, and an inner pole cooling water path for absorbing heat from the inner pole. It is preferable to be configured.

  In the first aspect of the present invention, the lower surface facing the OL heat shield sample is coated with a black coating, and the temperature of the OL heat shield surface is transferred to the facing sample by radiation. Preferably it is.

In the first aspect of the present invention, the black coating is preferably made using carbon.

  In the first aspect of the present invention, the charged particle beam emitted by the beam emitting means is preferably an electron beam.

  According to the first aspect of the present invention, a sample such as a mask substrate is removed from heat generated in a coil constituting a magnetic lens of a charged particle beam drawing apparatus, in addition to a coil cooling plate surrounding the coil, and further, an OLC shield. The magnetic pole and the OL heat shield can be triple shielded.

  The constant temperature control of the OLC shield, each of the inner and outer poles of the magnetic pole having a two-part structure of the inner and outer poles, and the OL heat shield can be independently performed.

  Furthermore, the uniform temperature distribution state of the temperature-controlled OL heat shield itself can be transferred to the sample by radiation, and the occurrence of temperature distribution in the sample can be suppressed.

Therefore, the charged particle beam drawing apparatus according to the first aspect of the present invention can achieve a desired pattern dimension and pattern accuracy by enabling precise temperature adjustment and uniform temperature distribution in the sample.

It is a block diagram of the electron beam drawing apparatus of this Embodiment. It is a typical cross-sectional view explaining the structure of the magnetic lens of the electron beam drawing apparatus of this Embodiment. It is a figure which illustrates typically the method to absorb the heat which generate | occur | produced with the coil of the magnetic lens.

  FIG. 1 is a configuration diagram of an electron beam drawing apparatus which is an example of a charged particle beam drawing apparatus according to the present embodiment.

  The electron beam drawing apparatus 1 shown in FIG. 1 is an apparatus that can be installed in a clean room. The electron beam drawing apparatus 1 includes a drawing chamber 5 that contains a stage 3 on which a mask substrate 2 that is a sample to be drawn is placed and is evacuated. An electron column 7 is provided as a beam irradiating unit. In the electron column 7, a charged particle beam is emitted from an electron gun 4 which is a beam emitting unit provided on the mask substrate 2 placed on the stage 3. The electron beam 6 which is an example is irradiated.

  The stage 3 can be moved in the X direction (direction parallel to the paper surface) and the Y direction (direction perpendicular to the paper surface) by the stage moving means 8. The stage 3 is provided with a mirror 9 for the laser interferometer 10. The laser interferometer 10 irradiates the mirror 9 with laser light, receives the reflected light from the mirror 9, and outputs the received light signal to a position detecting means (not shown). A position detection unit (not shown) detects the position of the stage 3 in the X direction and the Y direction based on the signal from the laser interferometer 10.

  The lowermost part of the electron column 7 is called an objective block 20. The objective block 20 is a block that is continuous with the drawing chamber 5 in a vacuum atmosphere, and is in a vacuum atmosphere. The objective block 20 includes a magnetic lens 21 for imaging the electron beam 6 and has a function of reducing the electron beam 6 and forming an image on the mask substrate 2 as a sample.

  As will be described later, the magnetic lens 21 is composed of a magnetic pole 31 and a coil 30, and a magnetic field is generated between the magnetic poles by passing a current through the coil 30, and functions as a lens for the electron beam 6.

  Then, the electron beam 6 from the stage 3 on which the mask substrate 2 is placed and the electron gun 4 incorporated in the electron column 7 is controlled by a drawing control device (not shown) based on a drawing job describing drawing conditions and the like. Then, a drawing operation on the mask substrate 2 in the drawing chamber 5 is performed.

FIG. 2 is a schematic cross-sectional view illustrating the configuration of the magnetic lens 21 of the electron beam drawing apparatus 1 according to the present embodiment.
FIG. 3 is a diagram schematically illustrating a method for absorbing heat generated in the coil 30 of the magnetic lens 21. In FIG. 3, the arrows shown in the coil cooling plate 32, the OLC (Object Lens Coil) shield 35, the inner pole 40, the outer pole 41, and the OL (Object Lens) heat shield 44 schematically indicate the heat flow generated in each part. It is shown as an example.

  As described above, in order to generate a magnetic field between the magnetic poles 31, a current is passed through the coil 30. At that time, the coil 30 generates heat. Therefore, in the electron beam drawing apparatus 1 according to the present embodiment, a novel multiple heat shield structure is provided around the coil 30 to control it so as not to affect the mask substrate 2.

  That is, the magnetic lens 21 of the electron beam drawing apparatus 1 of the present embodiment includes a coil 30, a coil cooling plate 32 that surrounds and cools the coil 30, and a part disposed around the coil cooling plate 32. And an OLC shield 35 that is in contact with the coil cooling plate 32 and shields heat from the coil cooling plate 32, a magnetic pole 31 that is arranged around the OLC shield 35 and divided into an inner pole 40 and an outer pole 41, and an outer An OL heat shield 44 that is disposed around the pole 41 and between the outer pole 41 and the mask substrate 2 and shields heat from the outer pole 41, and a coil that absorbs heat from the coil cooling plate 32 and the OLC shield. The cooling water passage 33, the outer cooling water passage 43 that absorbs heat from the outer electrode 41, and the inner cooling water passage 45 that absorbs heat from the inner electrode 40 provided separately from the outer cooling water passage 43. It is constructed from.

  Below, each component of the magnetic lens 21 of the electron beam drawing apparatus 1 of this Embodiment is demonstrated in detail.

  First, the coil 30 is encapsulated together with a filler having a high thermal conductivity in a coil cooling plate 32 formed using a metal material having a good thermal conductivity. At this time, the coil cooling plate 32 is preferably configured using high-purity copper. A coil cooling water path 33 for circulating the cooling water is provided around the coil cooling plate 32. The cooling water for the coil 30 flowing through the coil cooling water passage 33 is cooling water whose temperature is controlled to be 6 ° C. (± 0.1 ° C.) lower than a predetermined reference temperature. Thus, the constant temperature control of the coil 30 is performed.

  The coil cooling plate 32 is fixed at a predetermined position in the objective block 20 via a resin bush 34 made of resin. Since the resin bushing 34 is made of resin and has a low thermal conductivity, it is possible to prevent heat from flowing into the surroundings due to thermal conduction.

  With the above configuration, the heat generated in the coil 30 is absorbed by the cooling water flowing through the coil cooling water passage 33. However, a temperature gradient is generated on the lower surface side (mask substrate 2 side) of the coil cooling plate 32. During the drawing operation, the temperature gradient of this part may reach 10 ° C. If the temperature is included up to the outside of the coil cooling plate 32 (outside of the electron column 7), the temperature gradient reaches 20 ° C. There is a case.

  Such a temperature gradient generated in the vicinity of the coil 30 promotes generation of a temperature distribution of the mask substrate 2 disposed below. Therefore, in the electron beam drawing apparatus 1 of the present embodiment, a multiple heat shield structure described below is provided. The coil 30 and the periphery of the coil cooling plate 32 surrounding the coil 30 are isolated from the vacuum atmosphere of the objective block 20 and are in an air atmosphere. Therefore, heat is transmitted to the above-described heat shield by air convection and radiation.

  Next, around the coil 30 and the coil cooling plate 32 surrounding the coil 30, the lower surface side, the inner surface side (center side of the electron lens barrel 7), and the outer surface side (external side of the electron lens tube 7) are shielded. An OLC shield 35 is provided as a heat shield structure.

  The OLC shield 35 is a sheet metal component made of high-purity copper having excellent thermal conductivity. The OLC shield 35 is fixed to a predetermined position in the objective block 20 by the resin bushing 34 together with the coil cooling plate 32 in the vicinity of the coil cooling water path 33, and the substantially central portion is further fixed to the coil cooling plate 32 by the resin bushing 36. It is fixed, and its end is fixed by a resin bush 37, cooled by the action of coil cooling water flowing through the coil cooling water passage 33, and controlled at constant temperature.

At this time, since the resin bushes 36 and 37 have low thermal conductivity, they are not easily affected by heat from the coil cooling plate 32. Therefore, the temperature gradient of the lower surface side (mask substrate 2 side) portion of the OLC shield 35 is suppressed to about 5 ° C.
Further, the periphery of the OLC shield 35 is isolated from the vacuum atmosphere of the objective block 20 and is in an air atmosphere, and heat is transmitted to the outer pole 41 described below by air convection and radiation.

  Around the OLC shield 35, a magnetic pole 31 is provided for functioning as the magnetic lens 21. In the electron beam lithography apparatus 1 according to the present embodiment, the magnetic pole 31 is divided into two parts and surrounds the upper surface side (electron gun 4 side) and the inner surface side (center side of the electron barrel 7) of the coil 30. The pole 40 is composed of an outer pole 41 that surrounds the lower surface side (mask substrate 2 side) and the outer surface side (outside of the electron barrel 7) of the coil 30. The inner pole 40 and the outer pole 41 function as the magnetic pole 31 of the magnetic lens 21 as described above, but also act as a heat shield for the coil 30.

The inner pole 40 and the outer pole 41 constituting the magnetic pole 31 are each made of a high-purity iron material in order to improve the performance as the magnetic pole.
And the outer pole 41 which shields the lower surface side of the coil 30 which is the mask substrate 2 side is provided with an outer pole cooling water path 43 around it, and is controlled within ± 0.01 ° C. from the above-mentioned reference temperature. Constant temperature water is circulating. The outer electrode 41 is controlled at a constant temperature by the action of the constant temperature water flowing through the outer electrode cooling water passage 43. As a result, the temperature gradient of the portion on the lower surface side (mask substrate 2 side) of the outer electrode 41 is suppressed to about 0.2 ° C.

  Note that the upper side of the outer pole 41, that is, between the OLC shield 35 and the objective block 20 is in an isolated environment and is an atmospheric atmosphere, but the lower side is continuously vacuumed with the phase block 20. The atmosphere. Therefore, heat is transmitted by radiation to the OL heat shield 44 described below, which is further below the outer pole 41.

  Between the outer electrode 41 and the mask substrate 2, surrounds the lower surface side (mask substrate 2 side) and the outer surface side (the outer side of the electron barrel 7) of the coil 30, and shields heat from the outer electrode 41. The OL heat shield 44 is provided at the position where the operation is performed. The OL heat shield 44 mainly functions as a heat shield that further reduces the influence of the temperature gradient of the outer electrode 41 and suppresses the influence on the mask substrate 2.

  The OL heat shield 44 is a component made of high-purity copper having excellent thermal conductivity. The outer electrode 41 is fixed in the vicinity of the outer electrode cooling water path 43, and the constant temperature control is performed together with the outer electrode 41 by the constant temperature water set to a substantially reference temperature flowing through the outer electrode cooling water path 43. At this time, the OL heat shield 44 is formed as thick as possible so that the temperature from the center to the end is uniform. With such a structure, the temperature gradient at the lower surface side (mask substrate 2 side) of the OL heat shield 44 is suppressed to about 0.1 ° C.

  The mask substrate 2 is disposed on the lower surface side of the OL heat shield 44. This is spatially continuous with the objective block 20 and is placed in the same vacuum atmosphere. A black coating is applied to the lower surface of the OL heat shield 44 facing the mask substrate 2 in order to increase the heat radiation rate.

  And it is preferable that this black coating is a carbon coating made using carbon. Due to the effect of the coating for increasing the emissivity, the temperature on the lower surface of the OL heat shield 44 is transferred to the mask substrate 2 on the lower surface side, and in the mask substrate 2, the in-plane temperature distribution is reduced to about 0.05. It will be kept below ℃.

  That is, in the OL heat shield 44, not only is the mask substrate 2 shielded from the heat generated by the coil 30 to cool or keep the temperature constant, but rather the constant temperature state due to the uniform temperature distribution of the OL heat shield 44 itself is maintained. 2 is positively transferred by radiation to suppress the occurrence of temperature distribution there.

  Therefore, even if heat generation from the stage 3 or heat generation due to beam irradiation locally occurs on the mask substrate 2, it is possible to control the mask substrate 2 to maintain a constant temperature state by the transfer effect of the OL heat shield 44. It becomes.

  In addition, the inner pole 40 surrounding the upper surface side and the inner surface side (the center side of the electron lens barrel 7), which is the electron gun 4 side of the electron lens barrel 7, has an environment in which the coil 30 side is isolated from the objective block 20. It is below and close to the coil cooling plate 32, and heat from the coil cooling plate 32 flows in. Since the coil cooling plate 32 has a high temperature at the center portion, the temperature of the inner pole 40 is higher than that of the other OLC shield 35, outer pole 41, and OL heat shield 44. Therefore, it is preferable to provide an independent constant temperature water path around the outer pole 41 and the inner pole 40 divided.

  Therefore, in the electron beam lithography apparatus 1 of the present embodiment, the magnetic pole 31 is divided into the inner pole 40 and the outer pole 41, and the inner pole cooling water path 45 is provided independently around the inner pole 40. It has been. And the constant temperature control of the inner pole 40 is enabled independently.

  It has been found that the temperature gradient between the lower end portion of the inner pole 40 located on the OL heat shield 44 side and the upper portion where the inner pole cooling water passage 45 is disposed is about 0.6 ° C. By setting the temperature of the water flowing in the cooling water path 45 to be about 0.6 ° C. lower than the temperature of the water flowing in the outer pole cooling water path 43 and set to a substantially predetermined reference temperature, the inner pole 40 The temperature of the lower end portion located on the OL heat shield 44 side can be made substantially the same as that of the OL heat shield 44.

  Therefore, the influence of the inner electrode 40 and the outer electrode 41 on the OL heat shield 44 can be made substantially the same, and the temperature gradient in the OL heat shield 44 can be more effectively suppressed.

  In addition, although water was illustrated as a medium which can be used with respect to the cooling water paths 33, 43, and 45 provided in the electron beam drawing apparatus 1, in addition to water, some substance is used for the purpose of preventing deterioration of apparatus parts and raising the boiling point. It is possible to use an aqueous solution produced by adding to the water. Further, it is possible to use a fluorine-based cooling medium such as HFE (hydrofluoroether). As other media, FC (Fluorinert) or HFPE (H-Galden) can be used.

  With the above configuration, the electron beam lithography apparatus 1 according to the present embodiment can control the temperature on the mask substrate and suppress the generation of a temperature gradient. It is possible to realize pattern dimensions and pattern accuracy.

  The present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the spirit of the present invention. For example, in the above embodiment, an example of drawing on a mask substrate has been described, but the present invention can also be applied to drawing on a wafer. In the above embodiment, an electron beam is used. However, the present invention is not limited to this, and the present invention can also be applied to cases where other charged particle beams such as an ion beam are used.

DESCRIPTION OF SYMBOLS 1 Electron beam drawing apparatus 2 Mask substrate 3 Stage 4 Electron gun 5 Drawing room 6 Electron beam 7 Electron barrel 8 Stage moving means 9 Mirror 10 Laser interferometer 20 Objective block 21 Magnetic lens 30 Coil 31 Magnetic pole 32 Coil cooling plate 33 Coil cooling Water path 34, 36, 37 Resin bush 35 OLC shield 40 Inner pole 41 Outer pole 43 Outer pole cooling water path 44 OL heat shield 45 Inner pole cooling water path

Claims (5)

A drawing room constituting a vacuum chamber in which a stage on which a sample is placed is arranged at the bottom;
A beam emitting means having an upper part and a beam irradiating means having a magnetic lens at the lower part;
A charged particle beam drawing apparatus for drawing a predetermined pattern by irradiating a charged particle beam to the sample while controlling the charged particle beam from the beam emitting means by the magnetic lens while moving the stage. ,
The magnetic lens is arranged around a coil, a coil cooling plate surrounding the coil, an OLC shield arranged around the coil cooling plate to shield heat from the coil cooling plate, and around the OLC shield. A charged particle beam drawing apparatus comprising: a magnetic pole; and an OL heat shield that is disposed between the magnetic pole and the sample and shields heat from the magnetic pole. The coil cooling plate and the OLC shield are in contact at the end,
The magnetic pole has a two-part structure composed of an inner pole and an outer pole,
A coil cooling water path for absorbing heat from the coil cooling plate and the OLC shield, an outer pole cooling water path for absorbing heat from the outer pole, and an inner pole cooling water path for absorbing heat from the inner pole. The charged particle beam drawing apparatus according to claim 1, further comprising:   The lower surface of the OL heat shield facing the sample is coated with a black coating, and the temperature of the OL heat shield surface is transferred to the facing sample by radiation. The charged particle beam drawing apparatus according to 1 or 2.   The charged particle beam drawing apparatus according to claim 3, wherein the black coating is made of carbon.   The charged particle beam drawing apparatus according to any one of claims 1 to 4, wherein the charged particle beam emitted by the beam emitting means is an electron beam.

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