JP2011058964A - X-ray plane detector, and method for manufacturing the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an X-ray plane detector of high reliability, which can be made high performance and compact. <P>SOLUTION: The X-ray plane detector 10 includes: a solid imaging element 4 having a light receiving part 2 on which a plurality of photoelectric conversion elements 1 are arrayed, and an electrode pad 3; a base 8 having an electrode pad 6 for external connection provided on the front surface side, and having an electrode terminal 7 connected electrically to the pad 6 and arranged on the rear surface side; wiring 9 for connecting electrically the electrode pad 3 to the electrode pad 6 for external connection; a scintillator layer 5 for converting an X-ray entering from the outside into light; and a protection layer 25. The protection layer 25 is formed continuously to cover integrally at least the front surface, the rear surface and the side surface of the scintillator layer 5, the light receiving part 2, the electrode pad 3, the electrode pad 6 for external connection, and the wiring 9. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to an indirect X-ray flat panel detector and a method for manufacturing the indirect X-ray flat panel detector, and more particularly, an X-ray flat panel detector having high reliability, high performance and miniaturization, and the X-ray flat panel. The present invention relates to a manufacturing method capable of manufacturing a detector with high production efficiency and at low cost.

  As a new generation image detector for X-ray diagnosis, an X-ray flat panel detector using an active matrix, a solid-state imaging device such as a CCD, a CMOS or the like has attracted a great deal of attention. By irradiating the X-ray flat detector with X-rays, an X-ray image or a real-time X-ray image can be output as a digital signal. For this reason, there are great expectations in terms of image quality and stability, and many universities and manufacturers are engaged in research and development.

  X-ray flat panel detectors using an active matrix have been developed for chest and general radiography that collect still images with a relatively large dose, and have been commercialized in recent years. Commercialization is expected in the near future for applications in the circulatory and digestive fields that need to clear higher technical hurdles and realize real-time video of 30 frames / sec or more under fluoroscopic dose. Is done. For this video application, improvement of S / N, real-time processing technology of minute signals, and the like are important development items.

  In addition, X-ray flat panel detectors using solid-state image sensors such as CCD and CMOS are used in industrial non-destructive inspections that collect still images with a large dose and dental applications that are inserted into the oral cavity to collect still images. Recently commercialized. In this X-ray flat panel detector, improvement of S / N, real-time processing of minute signals, downsizing of the detector, improvement of reliability, etc. are important development items including correspondence to moving image applications.

  By the way, X-ray flat panel detectors are roughly classified into two methods, a direct method and an indirect method.

  The direct method is a method in which X-rays are directly converted into a charge signal by a photoconductive film such as a-Se and led to a charge storage capacitor. In this direct method, the photoconductive charge generated by X-rays is directly guided to the charge storage capacitor by a high electric field, so that a resolution characteristic almost defined by the pixel electrode pitch of the active matrix can be obtained.

  On the other hand, the indirect method is a method in which X-rays are once converted into visible light by the scintillator layer, and the visible light is converted into signal charges by an a-Si photodiode, CCD, CMOS or the like and led to the charge storage capacitor. For this reason, degradation of resolution characteristics occurs due to optical diffusion and scattering until visible light from the scintillator layer reaches the photodiode, CCD, and CMOS.

  5 and 6 show the basic configuration of a conventional indirect X-ray flat panel detector using a solid-state imaging device.

  In the conventional indirect X-ray flat panel detector 50, as shown in FIG. 5, a light receiving section 2 having a plurality of photoelectric conversion elements 1 for converting visible light into electrical signals is formed on a flat substrate 16, and this An electrode pad 3 that is electrically connected to the photoelectric conversion element 1 is provided on the outer side of the light receiving unit 2, and constitutes a solid-state imaging element 4. Further, a scintillator panel 17 in which the scintillator layer 5 is formed on the support substrate 13 that transmits radiation is joined to the light receiving unit 2 of the solid-state imaging device 4 via the joining layer 14 to constitute a detector unit 19. .

  This detector section 19 is fixed on a base 8 having an electrode terminal 7 formed on the front surface side with an external connection electrode pad 6 and electrically connected to the external connection electrode pad 6 on the back surface side. .

  Furthermore, the electrode pad 3 on the solid-state imaging device 4 and the external connection electrode pad 6 on the base 8 are electrically connected by a wiring 9 (see, for example, Patent Document 1).

  As a basic operation principle of this conventional indirect X-ray flat panel detector, visible light 12 converted by the scintillator layer 5 by incident X-rays 11 reaches the photoelectric conversion element 1 formed on the solid-state imaging element 4. As a result, it is converted into electric charge and accumulated in the photoelectric conversion element 1 for a certain time. The charges accumulated in the photoelectric conversion elements 1 are transmitted from signal lines (not shown) corresponding to the respective photoelectric conversion elements 1 to the electrode pads 3 on the solid-state imaging element 4 corresponding to the respective photoelectric conversion elements 1, wirings 9, and external connections. The output signals are sequentially read out from the electrode terminals 7 via the electrode pads 6 and converted into digital image signals by a predetermined signal processing circuit or the like.

JP 2008-261651 A

However, in the basic configuration of the X-ray flat panel detector 50 using the scintillator panel 17 as shown in FIG.
(1) Absorption of incident X-rays 11 in the support substrate 13 (deterioration of output signal intensity with respect to incident X-rays 11),
(2) Expansion of the size of the X-ray flat panel detector by introducing the support substrate 13;
(3) Decrease in productivity due to an increase in the number of parts (support substrate 13) and the number of processes (formation of the bonding layer 14),
(4) Optical diffusion and scattering (deterioration of image characteristics) in the bonding layer 14;
(5) Decrease in detector reliability against external force,
There are issues such as.

  An X-ray flat panel detector as shown in FIG. 6 is used in order to solve the above problems (1) to (5) and improve the performance, size, reliability, and productivity of the detector. Can do.

  In this X-ray flat panel detector 60, as shown in FIG. 6, a light receiving unit 2 having a plurality of photoelectric conversion elements 1 that convert visible light into an electrical signal is formed on a flat substrate 16. The electrode pad 3 that is electrically connected to the photoelectric conversion element 1 is provided on the outside, and the solid-state image pickup element 4 is configured in the same manner as the X-ray flat panel detector 50 of FIG. However, in the X-ray flat panel detector 60, the scintillator layer 5 that converts X-rays into visible light is directly formed on the light receiving unit 2 of the solid-state imaging device 4.

  A reflective layer (not shown) may be formed on the scintillator layer 5 in order to increase the utilization efficiency of the converted visible light. Furthermore, in order to protect the scintillator layer 5, the entire surface of the scintillator layer 5 is covered with a protective layer 15.

  In the solid-state imaging device 4 on which the scintillator layer 5 is formed, the external connection electrode pad 6 is formed on the front surface side and the external connection electrode pad 6 is electrically connected to the back surface side in the same manner as the X-ray flat panel detector 50 of FIG. The electrode pad 3 and the external connection electrode pad 6 are electrically connected to each other by the wiring 9.

  Here, the characteristics of the scintillator layer 5 are important in the structure of the indirect X-ray flat panel detector. The scintillator layer 5 is mainly made of a high-intensity fluorescent material composed of a halogen compound such as CsI or an oxide compound such as GOS in order to improve the output signal intensity for incident X-rays. The scintillator layer generally has a high density and is uniformly formed on the solid-state imaging device 4 by using a vapor phase growth method such as a vacuum deposition method, a sputtering method, or a CVD method. In particular, when a halogen compound such as CsI is used for the scintillator layer 5, the resolution characteristics can be improved by forming the scintillator layer 5 having a strip-like columnar crystal structure by a vacuum deposition method. .

  However, when a halogen compound such as CsI, which is a high-intensity fluorescent material, is used for the scintillator layer 5, the reactivity of a halogen element such as iodine is high. Therefore, the photoelectric conversion element 1 in contact with the scintillator layer 5 and the electrode pad 3 Reacting with positive elements in the external connection electrode pad 6 and the wiring 9 electrically connecting the pads 3 and 6, the photoelectric conversion element 1 and the like corrode, and the X-ray flat panel detector 60 Characteristics and reliability may be degraded.

  Therefore, as shown in FIG. 6, for the purpose of reliability of the X-ray flat panel detector, the electrode pad 3 on the solid-state imaging device 4, the electrode pad 6 for external connection on the base 8, the electrode pad 3, and the external connection A protective layer 18 mainly made of a resin material is provided to cover the wiring 9 that electrically connects the electrode pad 6 for use. Further, a protective cover 22 is formed via the bonding layer 21.

  However, when the electrode pad 3, the external connection electrode pad 6, and the wiring 9 that electrically connects these pads 3 and 6 are covered with the protective layer 18, the light receiving unit 2 and the electrode pad on which the scintillator layer 5 is formed. 3, the clearance accompanying the formation of the protective layer 18 needs to be secured, which may be an obstacle to downsizing the X-ray flat panel detector 60 or expanding the light receiving unit 2.

  Furthermore, since the protective layer 18 is mainly composed of a resin material, the X-ray absorption rate is lower than that of the scintillator layer 5, which may lead to a decrease in reliability associated with X-ray resistance.

  Accordingly, the present invention has been made in view of the above points, and is an X-ray flat panel detector that is highly reliable and capable of high performance and miniaturization, and X that can improve productivity and reduce production costs. An object of the present invention is to provide a method for manufacturing a line flat detector.

  In order to achieve the above-described object, the X-ray flat panel detector of the present invention has a light receiving section in which a plurality of photoelectric conversion elements are arranged one-dimensionally or two-dimensionally on a flat substrate, A solid-state imaging device having an electrode pad electrically connected to the photoelectric conversion device around the portion, and fixing the solid-state imaging device, and on the outer side of the fixed portion on the surface side where the solid-state imaging device is fixed A base on which an electrode terminal electrically connected to the external connection electrode pad is disposed on the opposite surface side, and the electrode pad and the external connection electrode pad; Wiring for electrically connecting, a scintillator layer that is provided on the light receiving portion of the solid-state imaging device and converts X-rays incident from the outside into light, and at least the front, back, and side surfaces of the scintillator layer, Serial receiving unit, the electrode pads, characterized by including the external connection electrode pads, and a protective layer which is continuously formed so as to cover integrally the wiring.

  The X-ray flat panel detector manufacturing method of the present invention is electrically connected to a light receiving unit in which a plurality of photoelectric conversion elements are arranged one-dimensionally or two-dimensionally on a flat substrate, and the photoelectric conversion elements. Forming a solid-state imaging device by providing the electrode pads, and forming external connection electrode pads on the front surface side and forming electrode terminals electrically connected to the external connection electrode pads on the back surface side A step of fixing the solid-state imaging device on a surface of a base; a step of electrically connecting the electrode pad and the electrode pad for external connection by wiring; and at least the light receiving unit, the electrode pad, and the external A step of forming a first protective layer by vapor deposition so as to integrally cover the connection electrode pad and the wiring; and a scintillator for converting X-rays incident from the outside into light on the light receiving portion. A step of forming a layer, and a step of continuously forming a second protective layer formed of the same material as the first protective layer on the scintillator layer with the first protective layer by vapor deposition. It is characterized by providing.

  According to the X-ray flat panel detector of the present invention, an indirect X-ray flat panel image detector using a solid-state imaging device can be downsized, improved in performance, and improved in reliability.

  In addition, according to the method of manufacturing an X-ray flat panel detector of the present invention, an X-ray flat panel detector that is excellent in reliability, small in size and high in performance can be provided with high productivity and low cost.

It is sectional drawing which shows the X-ray flat panel detector which concerns on the 1st Embodiment of this invention. It is sectional drawing which shows the X-ray flat panel detector which concerns on the 2nd Embodiment of this invention. It is sectional drawing which shows the X-ray flat panel detector which concerns on the 3rd Embodiment of this invention. It is sectional drawing which shows the X-ray flat panel detector which concerns on the 4th Embodiment of this invention. It is sectional drawing which shows the conventional X-ray flat panel detector. It is sectional drawing which shows the other conventional X-ray flat panel detector.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

(First embodiment)
[Configuration of X-ray flat panel detector according to this embodiment]
FIG. 1 shows the configuration of the X-ray flat panel detector according to the first embodiment of the present invention.

  The X-ray flat detector 10 is an indirect type flat image detector, and includes a solid-state imaging device 4 that is an active matrix photoelectric conversion substrate that converts visible light into an electric signal.

  In the central region of the surface of the solid-state imaging device 4, a light receiving section 2 is formed in which a plurality of photoelectric conversion elements 1 such as photodiodes that convert visible light into electric signals are arranged in a two-dimensional matrix. A plurality of electrode pads 3 that are electrically connected to the photoelectric conversion elements 1 and extract electric signals converted by the photoelectric conversion elements 1 are arranged in the peripheral area of the surface of the solid-state imaging element 4.

  In addition, the X-ray flat panel detector 10 includes a base 8 that fixes the solid-state imaging device 4. A plurality of external connection electrode pads 6 that are electrically connected to the electrode pads 3 of the solid-state imaging device 4 are disposed on the front surface side of the base 8, and each external connection is provided on the back side of the base 8. A plurality of electrode terminals 7 for external connection that are electrically connected to the electrode pads 6 are provided.

  Furthermore, each electrode pad 3 of the solid-state imaging device 4 and each external connection electrode pad 6 of the base 8 are electrically connected by a plurality of wires 9 such as wires.

  Moreover, they are continuously applied to the entire surface of the base 8 including the light receiving portion 2 of the solid-state imaging device 4, the electrode pad 3, the external connection electrode pad 6, and the wiring 9 disposed on the surface side of the base 8. A first protective layer 25a that integrally covers is formed.

  A scintillator layer 5 that converts X-rays into visible light is formed on the base 8 including the surface side of the first protective layer 25 a on the solid-state imaging device 4. The scintillator layer 5 is made of a phosphor such as a halogen compound such as cesium iodide (CsI) or an oxide compound such as gadolinium sulfate (GOS), which is a high-intensity fluorescent material. , Formed by a vapor phase growth method such as a CVD method.

  Further, the second protective layer 25b is formed by covering the surface of the scintillator layer 5 with the same material and the same formation method as the first protective layer 25a.

  The protective layer 25 composed of the first protective layer 25a and the second protective layer 25b is a substance having insulating properties, water vapor barrier properties, permeability to the light emitted from the scintillator layer 5, and corrosion resistance to the substances constituting the scintillator layer 5. In addition, an organic substance containing polyparaxylylene as a main component, or a carbon crystal made of diamond crystal and an inorganic substance containing a carbon crystal containing silicon as a main component can be preferably used. The formation of the protective layer 25 requires continuous film formation on the concavo-convex portions and step portions of the solid-state imaging device 4 and the base 8, so that vapor phase growth such as vacuum deposition, sputtering, or CVD is used. Although a method and a plating method are used, it is preferable to use a CVD method at a low temperature so that the shape matching is particularly high and a film can be formed on the back side of the wiring 9.

[Manufacturing method of X-ray flat panel detector according to the present embodiment]
First, a solid-state image sensor 4 in which a plurality of photoelectric conversion elements 1 are two-dimensionally arranged and a light receiving unit 2 and electrode pads 3 are formed is arranged and fixed on a base 8, and each solid-state image sensor 4 is fixed. The electrode pad 3 and each external connection electrode pad 6 of the base 8 are electrically connected by a plurality of wirings 9.

  Next, at least the entire inner surface of the base 8 including the light receiving unit 2, the electrode pad 3, the external connection electrode pad 6, and the wiring 9 of the solid-state imaging device 4 disposed on the surface side of the base 8 is continuously provided. First, the first protective layer 25a that is integrally covered is formed by, for example, a CVD method at a low temperature.

  Further, the scintillator layer 5 is formed on the base 8 including the surface side of the first protective layer 25a, and the second protective layer 25b is formed on the surface side of the scintillator layer 5 by, for example, a CVD method at a low temperature.

[Operation of X-ray flat panel detector according to this embodiment]
X-rays 11 incident on the scintillator layer 5 of the X-ray flat panel detector 10 are converted into visible light 12 by the scintillator layer 5.

  The visible light 12 reaches the photoelectric conversion element 1 of the light receiving unit 2 of the solid-state imaging element 4 through the scintillator layer 5 and is converted into an electric signal. The electrical signal converted by the photoelectric conversion element 1 is output to the outside through the electrode pad 3, the wiring 9, the external connection electrode pad 6, and the electrode terminal 7 by a reading operation.

[Effect of X-ray flat panel detector according to this embodiment]
(1) The light receiving unit 2 and the electrode pad 3 of the solid-state image sensor 4, the scintillator layer 5, the external connection electrode pad 6 on the base 8, and the electrode pad 3 and the external connection electrode pad 6 on the solid-state image sensor 4 Since the wiring 9 that electrically connects the two has a structure in which the protective layer 25 is continuously and integrally covered with the protective layer 25, the wiring 9 is not in direct contact with the scintillator layer 5, and the scintillator layer 5 is also protected. The structure is sealed by the layer 25. For this reason, even when a halogen compound such as CsI which is a high-intensity fluorescent material is used for the scintillator layer 5, corrosion of the photoelectric conversion element 1 can be prevented. Moreover, it can prevent that the scintillator layer 5 reacts with the water | moisture content in air | atmosphere, and deliquesces, and can improve corrosion resistance.

  (2) Unlike the conventional X-ray flat panel detector 60 shown in FIG. 6, the protective layer 18 that covers the electrode pad 3, the external connection electrode pad 6, and the wiring 9 is not formed. Even if the layer 5 is formed, the reliability of the X-ray flat panel detector 10 can be maintained. For this reason, in an indirect X-ray flat panel detector, it is possible to improve the performance and reliability of the detector. In addition, since the scintillator panel is not used, the production cost can be reduced by reducing the number of parts of the support substrate 13 and the productivity can be improved by reducing the formation process of the bonding layer 14.

  (3) Since the protective layer 18 is not formed on the electrode pad 3, the external connection electrode pad 6, and the wiring 9, and the scintillator layer 5 can be formed on the protective layer 18, it is accompanied by the formation of the protective layer 18. It is not necessary to secure clearance. For this reason, downsizing of the detector and enlargement of the light receiving unit 2 are possible.

  (4) Since the protective layer 25 is formed on the solid-state imaging device 4, the flatness of the solid-state imaging device 4 can be improved. For this reason, the crystallinity of the scintillator layer 5 formed thereon is improved, and characteristic improvement (image characteristics) accompanying the crystallinity improvement is obtained.

  (5) Since the scintillator layer 5 is in contact with the solid-state imaging device 4 via the protective layer 25, it is possible to relieve stress caused by the difference in thermal expansion coefficient between the solid-state imaging device 4 and the scintillator layer 5. And reliability is improved.

(Second Embodiment)
FIG. 2 shows the configuration of an X-ray flat panel detector according to the second embodiment of the present invention.

  In the X-ray flat panel detector 20 according to the present embodiment, a protective cover 22 for protecting the solid-state imaging device 4 and the scintillator layer 5 is formed via a bonding layer 21 formed at the end of the base 8. Except for this, it is formed in the same manner as the X-ray flat panel detector 10 according to the first embodiment.

  In the X-ray flat panel detector 20 according to the present embodiment, the same effect as the X-ray flat panel detector 10 according to the first embodiment is obtained, and the scintillator layer is reliably sealed and protected by the protective cover 22. The reliability of the detector against external force can be ensured.

(Third embodiment)
FIG. 3 shows the configuration of an X-ray flat panel detector according to the third embodiment of the present invention.

  The X-ray flat panel detector 30 according to the present embodiment is the first except that a reflective layer 27 is formed on the surface of the scintillator layer 5 in order to increase the use efficiency of visible light converted by the scintillator layer 5. It is formed similarly to the X-ray flat panel detector 10 according to the embodiment.

  The X-ray flat detector 30 according to the present embodiment also has the same effects as the X-ray flat detector 10 according to the first embodiment, and is converted by the scintillator layer 5 by the reflective layer 27. The utilization efficiency of visible light can be further increased.

(Fourth embodiment)
FIG. 4 shows the configuration of an X-ray flat panel detector according to the fourth embodiment of the present invention.

  In the X-ray flat panel detector 40 according to the present embodiment, a protective cover 22 for protecting the solid-state imaging device 4 and the scintillator layer 5 is formed via a bonding layer 21 formed at the end of the base 8. Except for this, it is formed in the same manner as the X-ray flat panel detector 10 according to the third embodiment.

  The X-ray flat panel detector 40 according to the present embodiment also has the same effects as the X-ray flat panel detector 30 according to the third embodiment, and the scintillator layer is reliably sealed and protected by the protective cover 22. The reliability of the detector against external force can be ensured.

In the X-ray flat panel detector 20 according to the second embodiment shown in FIG. 2, the solid-state imaging device 4 is CMOS, the material of the electrode pad 3 is Al, the material of the base 8 is Al ₂ O ₃ ceramic, and for external connection The material of the electrode pad 6 is Au, the material of the wiring 9 is Au, the constituent material of the protective layer 25 is polyparaxylylene, the thickness of the protective layer 25 is 5 μm, and the high brightness fluorescent material of the scintillator layer 5 is CsI (Tl doped). The X-ray flat panel detector 20 was manufactured using Al as the material of the protective cover 22 and the epoxy resin as the constituent material of the bonding layer 21.

On the other hand, as a comparative example, in the conventional X-ray flat panel detector 60 shown in FIG. 6, the solid-state imaging device 4 is CMOS, the electrode pad 3 is made of Al, and the base 8 is made of Al ₂ O ₃ ceramic. The material of the external connection electrode pad 6 is Au, the material of the wiring 9 is Au, the material of the protective layer 18 is an epoxy resin, the constituent material of the protective layer 15 is polyparaxylylene, the film thickness of the protective layer 15 is 5 μm, The X-ray flat panel detector 60 was manufactured using CsI (Tl doped) as the high-luminance fluorescent material for the scintillator layer 5, Al as the material for the protective cover 17, and epoxy resin as the constituent material for the bonding layer 21.

For these X-ray flat detector 20 and X-ray flat detector 60, sensitivity and resolution under the same conditions (tube voltage: 60 kV, tube current: 0.4 mA, SID: 300 mm, X-ray irradiation time: 0.1 s). (MTF) was measured and the ratio when the value of the comparative example was 1 was determined. The results are shown in Table 1.

  From the results in Table 1, it was found that the image characteristics of the X-ray flat panel detector according to the example are improved by about 10 to 30% compared with the image characteristics of the X-ray flat panel detector according to the comparative example. Thus, it can be said that the effect of the present invention on the enhancement of the performance of the X-ray flat panel detector is clear.

  Moreover, in the said Example, although the result at the time of using a polyparaxylylene as the protective layer 25 was shown, the diamond-like carbon (DLC) which has a carbon crystal consisting of a diamond crystal as a main component, and the carbon crystal containing silicon. It is estimated that the same effect can be obtained when SiC (silicon carbide) as a main component is used.

  DESCRIPTION OF SYMBOLS 1: Photoelectric conversion element, 2: Light-receiving part, 3: Electrode pad, 4: Solid-state image sensor, 5: Scintillator layer, 6: Electrode pad for external connection, 7: Electrode terminal, 8: Base, 9: Wiring, 10 : X-ray flat detector, 11: incident X-ray, 12: visible light, 13: support substrate, 14: bonding layer, 15: protective layer, 16: flat substrate, 17: scintillator panel, 18: protective layer, 19: Detector unit, 20: X-ray flat detector, 21: bonding layer, 22: protective cover, 25: protective layer, 25a: first protective layer, 25b: second protective layer, 27: reflective layer, 30, 40: X-ray flat panel detector

Claims (10)

An electrode pad in which a light receiving portion in which a plurality of photoelectric conversion elements are arrayed one-dimensionally or two-dimensionally is formed on a flat substrate, and is electrically connected to the photoelectric conversion element around the light receiving portion A solid-state imaging device having
While fixing the solid-state imaging device, an external connection electrode pad is provided outside the fixed portion on the surface side on which the solid-state imaging device is fixed, and electrically connected to the external connection electrode pad on the opposite surface side. A base on which connected electrode terminals are arranged;
Wiring for electrically connecting the electrode pad and the external connection electrode pad;
A scintillator layer that is provided on the light receiving portion of the solid-state imaging device and converts X-rays incident from the outside into light;
A protective layer continuously formed so as to integrally cover at least the front surface, back surface, and side surface of the scintillator layer, the light receiving unit, the electrode pad, the external connection electrode pad, and the wiring;
An X-ray flat panel detector characterized by comprising:   The protective layer includes a first protective layer that improves the crystallinity of the scintillator layer and relieves stress caused by a difference in thermal expansion coefficient between the scintillator layer and the solid-state imaging device; and the scintillator layer A first protective layer and a second protective layer that cover the surface and side surfaces of the first protective layer, block water vapor, and provide corrosion resistance to a substance constituting the scintillator layer. 2. The X-ray flat panel detector according to claim 1, wherein the layers are made of the same material.   The said protective layer is comprised by the substance which has insulation, water vapor | steam barrier | blocking property, the permeability | transmittance with respect to the light emission of the said scintillator layer, and the corrosion resistance with respect to the substance which comprises the said scintillator layer, It is characterized by the above-mentioned. The described X-ray flat panel detector.   The X-ray flat panel detector according to claim 3, wherein the protective layer is made of polyparaxylylene.   The X-ray flat panel detector according to claim 3, wherein the protective layer is formed of diamond-like carbon.   The X-ray flat panel detector according to claim 3, wherein the protective layer is made of silicon carbide.   The X-ray flat panel detector according to any one of claims 1 to 6, wherein the scintillator layer is formed of a high-intensity fluorescent material containing at least a halogen compound.   The X-ray flat panel detector according to any one of claims 1 to 7, wherein a reflection layer is provided on the scintillator layer so as to be in contact with the scintillator layer.   The X-ray flat panel detector according to any one of claims 1 to 8, wherein a protective cover is formed above the base so as to cover the entire protective layer. A step of forming a solid-state imaging device by providing a light receiving portion in which a plurality of photoelectric conversion elements are arranged one-dimensionally or two-dimensionally on a flat substrate and an electrode pad electrically connected to the photoelectric conversion elements; ,
Fixing the solid-state imaging element on the surface of the base on which the external connection electrode pad is formed on the front surface side and the electrode terminal electrically connected to the external connection electrode pad is formed on the back surface side; ,
Electrically connecting the electrode pads and the external connection electrode pads by wiring;
Forming a first protective layer by vapor deposition so as to integrally cover at least the light receiving portion, the electrode pad, the external connection electrode pad, and the wiring;
Forming a scintillator layer for converting X-rays incident from the outside into light on the light receiving unit;
Forming a second protective layer formed of the same material as the first protective layer on the scintillator layer continuously with the first protective layer by vapor deposition. A method for manufacturing an X-ray flat panel detector.

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