JP2011052980A - Temperature detector, apparatus and method for adjusting resistor for temperature detector, and semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To reduce dispersion among temperature detectors by performing adjustment that makes the gradients of temperature characteristics of temperature sensing elements substantially coincide with one another. <P>SOLUTION: This temperature detector 10 including a temperature-sensitive diode D (temperature-sensitive element) outputting a voltage corresponding to temperature includes a resistor 2 (adjusting apparatus) for adjusting an electric current If fed through the diode D according to a change in temperature so that the gradients of temperature characteristics varying with the diodes D accord with a prescribed gradient. In this structure, the gradients of the temperature characteristics, even if they differ from one another, are adjusted to accord with the prescribed gradient by adjusting the current If fed through the diode D by the resistor 2. This causes the gradient of the temperature characteristic of the diode D to substantially coincide with the prescribed gradient, allowing the dispersion among temperature detectors 10 to be reduced. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a temperature detector that includes a temperature-sensitive element and outputs a voltage corresponding to a temperature, an adjustment device and adjustment method for a resistor included in the temperature detector, and a semiconductor device including the temperature detector.

  Conventionally, an example of a technique aimed at reducing variation in forward voltage of a temperature-sensitive diode has been disclosed (see, for example, Patent Document 1). In this technology, a voltage applied to both ends of the temperature detection element by providing a plurality of resistors whose one end is connected in series to the temperature detection element and selecting and connecting the other end of any one of the resistors. The value (ie, voltage according to temperature) is adjusted.

  If the adjustment described above is performed, the variation in the forward voltage of the temperature sensitive diode is adjusted for the offset. For example, FIG. 21A shows characteristic lines respectively indicated by a solid line, a one-dot chain line, and a two-dot chain line for three temperature sensitive diodes. The temperature characteristics between the semiconductor devices having such variations are offset as shown in FIG. Therefore, it is possible to eliminate variations between elements in the forward voltage of the temperature sensitive diode at the specific temperature Tx.

JP 2006-344721 A

  However, as shown in FIG. 21A and FIG. 21B, the temperature characteristics of the temperature-sensitive diode generally have different slopes. Therefore, variations occur in the forward voltage of the temperature-sensitive diode at temperatures other than the specific temperature Tx, and the error increases as the distance from the specific temperature Tx increases.

  The present invention has been made in view of the above points, and a temperature detector and a temperature that can reduce variations between temperature detectors by making adjustments so that the gradient of the temperature characteristic applied to the temperature sensing element substantially coincides. An object of the present invention is to provide an adjustment device for a detector resistor, an adjustment method for a temperature detector resistor, and a semiconductor device.

  The invention according to claim 1, which has been made in order to solve the above-described problem, is a temperature detector that includes a temperature sensing element and outputs a voltage corresponding to the temperature, and a slope of a temperature characteristic that differs for each temperature sensing element is predetermined. It is characterized by having the adjustment part which adjusts the electric current sent through the said thermosensitive element according to the change of temperature so that it may become the inclination of (5).

  According to this configuration, even if the slope of the temperature characteristic of the temperature sensing element (that is, the rate of change) is different, the adjustment unit adjusts the current flowing through the temperature sensing element to adjust to a predetermined slope. To do. For this reason, the gradients of the temperature characteristics applied to the temperature sensitive elements almost coincide with each other with a predetermined gradient, so that variations between the temperature detectors can be reduced.

  The “adjuster” may use any element, circuit, or the like as long as the current flowing through the temperature sensitive element can be adjusted. For example, a resistor (including a thin film resistor, whether it is a fixed resistor or a variable resistor), a current source, or the like is applicable. In addition, a “temperature-sensitive element” is one that is generated between both ends of an element when the temperature of the element itself changes (it can be expressed as “addition” in addition. The same applies hereinafter). Any element may be used. Examples of elements include temperature sensitive diodes (specifically, GaAlAs diodes and silicon diodes), rhodium iron resistors, germanium resistors, platinum resistors, ruthenium oxide resistors and the like.

  According to a second aspect of the present invention, there is provided the temperature detector according to the first aspect, wherein the adjusting unit offsets the temperature characteristic having a predetermined slope and matches the temperature characteristic according to a change in temperature. It is characterized in that the current flowing through the current is adjusted.

  According to this configuration, not only the inclination of the temperature characteristic applied to the temperature sensing element substantially coincides with the predetermined inclination, but also the temperature characteristic itself substantially coincides. Therefore, since the variation between the temperature detectors at the same temperature can be minimized, the temperature detection accuracy is improved.

  According to a third aspect of the present invention, in the temperature detector according to the first or second aspect, the adjusting unit connects one or both of a resistor and a current source in parallel with the temperature sensitive element. It is characterized by.

  According to this structure, it adjusts so that the electric current which flows into a temperature sensing element may decrease by connecting in parallel with a temperature sensing element. Since it can be easily realized by using simple elements and circuits, the cost can be reduced.

  According to a fourth aspect of the present invention, in the temperature detector according to the first or second aspect, the adjusting unit may include one or both of a resistor and a current source between the temperature sensitive element and the power source. It is characterized by interposing it in.

  According to this configuration, the current flowing through the temperature sensing element is adjusted to be increased by interposing between the temperature sensing element and the power source. Since it can be easily realized by using simple elements and circuits, the cost can be reduced.

  According to a fifth aspect of the present invention, in the temperature detector according to the first or second aspect, the adjustment unit is interposed between the temperature sensing element and a power source, and the first resistor and the first current source One or both of them and one or both of the second resistor and the second current source connected in parallel with the temperature sensitive element are characterized.

  According to this structure, it can adjust freely so that the electric current which flows into a temperature sensing element may increase or decrease. Since it can be easily realized by using simple elements and circuits, the cost can be reduced.

  According to a sixth aspect of the present invention, in the temperature detector according to any one of the third to fifth aspects, the resistor provided as the adjustment unit processes a part of the element to adjust the resistance value. It is characterized by.

  According to this configuration, a resistor having a necessary resistance value can be obtained by processing a part of the element in order to substantially match the inclination of the temperature characteristic and the temperature characteristic itself. Resistors suitable for temperature sensitive elements having different temperature characteristics can be easily procured.

  The invention described in claim 7 is a temperature detector resistor adjusting device, wherein the temperature adjusting unit adjusts the temperature of the temperature sensing element for each temperature value for a plurality of temperature values, and the temperature adjusted by the temperature adjusting unit. The resistance which adjusts a resistance value by processing a part of the element applied to the resistor according to claim 6 so that the voltage applied to the temperature sensitive element becomes a voltage value related to the temperature every time. And a value adjusting unit.

  According to this configuration, the temperature sensing element is actually set to a predetermined temperature, and the resistor is processed so as to have a resistance value indicating a voltage value related to the temperature. By performing this at a plurality of temperature values, it is possible to easily procure a resistor that matches the temperature characteristics of the temperature sensitive element.

  According to an eighth aspect of the present invention, in the method for adjusting a temperature detector resistor, the first step of adjusting the temperature of the temperature sensing element for each temperature value for a plurality of temperature values, and the temperature adjusted by the first step Each time the resistance value is adjusted by processing a part of the element applied to the resistor according to claim 6, so that the voltage applied to the temperature-sensitive element becomes a voltage value related to each temperature. And two steps.

  According to this configuration, the temperature sensing element is actually set to a predetermined temperature, and the resistor is processed so as to have a resistance value indicating a voltage value related to the temperature. By performing this at a plurality of temperature values, it is possible to easily procure a resistor that matches the temperature characteristics of the temperature sensitive element.

  According to a ninth aspect of the present invention, in the semiconductor device, a semiconductor element is formed, and a voltage corresponding to a temperature of heat generated by the operation of the semiconductor element is output. The temperature detector described in 1) is provided.

  According to this configuration, it is possible to reduce the variation in temperature detected by the temperature detector provided in the semiconductor device.

  According to a tenth aspect of the present invention, in the semiconductor device according to the ninth aspect, the thin film resistor provided as the adjustment unit includes a compound of a metal element and a group 14 element.

  According to this configuration, since the thin film resistor including the compound of the metal element and the group 14 element has a small (low) temperature coefficient, the resistance value hardly changes even when the temperature of the thin film resistor changes. Since the temperature detected by the temperature detector provided with this thin film resistor is less varied between semiconductor devices, the semiconductor device can be operated stably.

  The “metal element” includes a transition metal element, such as Cr, Mo, W, Ti, Ta, Fe, Co, and Ni. Further, “Group 14 element” corresponds to, for example, Si, Ge, Sn, Pb and the like. Therefore, “compounds of metal elements and Group 14 elements” include metal silicides (eg, CrSi, CoSi, etc.), chromium alloys (eg, NiCr, CoCr, etc.), tungsten alloys (eg, TiW, MoW, etc.). And tantalum alloys (for example, TaN, SiTa, etc.).

FIG. 3 is a circuit diagram illustrating a configuration example of a temperature detector according to the first embodiment. It is a figure which shows the change of the electric current and voltage with respect to temperature about the circuit diagram of FIG. It is a figure explaining the example of adjustment concerning the inclination of a temperature characteristic. FIG. 6 is a circuit diagram illustrating a configuration example of a temperature detector according to a second embodiment. It is a figure which shows the change of the electric current and voltage with respect to temperature about the circuit diagram of FIG. It is a figure explaining the example of adjustment concerning the inclination of a temperature characteristic. FIG. 6 is a circuit diagram illustrating a configuration example of a temperature detector according to a third embodiment. It is a figure which shows the change of the electric current and voltage with respect to temperature about the circuit diagram of FIG. FIG. 6 is a circuit diagram illustrating a configuration example of a temperature detector according to a fourth embodiment. It is a figure which shows the change of the electric current and voltage with respect to temperature about the circuit diagram of FIG. FIG. 9 is a circuit diagram illustrating a configuration example of a temperature detector according to a fifth embodiment. FIG. 10 is a circuit diagram illustrating a configuration example of a temperature detector according to a sixth embodiment. FIG. 10 is a circuit diagram illustrating a configuration example of a temperature detector according to a seventh embodiment. FIG. 10 is a circuit diagram illustrating a configuration example of a temperature detector according to an eighth embodiment. FIG. 10 is a schematic diagram illustrating a configuration example of an adjustment device according to a ninth embodiment. It is a longitudinal cross-sectional view which shows the structural example of a laser trimming resistor. It is a top view which shows the example which changes the resistance value of a laser trimming resistor. It is a figure explaining the example of adjustment of resistance value by an adjustment device. FIG. 16 is a circuit diagram showing a configuration example of a semiconductor device according to a tenth embodiment; FIG. 22 is a circuit diagram showing a configuration example of a semiconductor device according to an eleventh embodiment; It is a figure which shows the change of the electric current and voltage with respect to the temperature in a prior art.

  Hereinafter, embodiments for carrying out the present invention will be described with reference to the drawings. Note that “connection” described below means electrical connection. In addition, elements used in the embodiments are denoted by the same reference numerals for common elements.

[Embodiment 1]
The first embodiment is an example in which the adjustment unit is configured by a resistor, and will be described with reference to FIGS. FIG. 1 is a circuit diagram showing a configuration example of the temperature detector. FIG. 2 is a graph showing changes in current and voltage with respect to temperature. FIG. 3 is a graph showing an adjustment example related to the gradient of the temperature characteristic.

  A temperature detector 10 shown in FIG. 1 includes a current source Eo, a resistor R2, a temperature sensitive diode D, and the like. The current source Eo stably supplies a constant current I. The temperature-sensitive diode D corresponds to a “temperature-sensitive element”, and the current flowing through the element and the voltage generated at both ends of the element change according to the temperature of the element itself. For example, a GaAlAs diode or a silicon diode is used as the temperature sensitive diode D. The resistor R2 corresponds to an “adjusting unit” and uses a variable resistor such as a laser trimming resistor (also referred to as “laser trimmable resistor”). Adjustment of an appropriate resistance value for the resistor R2 will be described in a ninth embodiment to be described later.

  The connection will be briefly described. The current source Eo is connected to the anode terminal of the temperature sensitive diode D, and the cathode terminal of the temperature sensitive diode D is grounded. Resistor R2 is connected in parallel to temperature sensitive diode D. According to this connection, the relationship shown by the following formula 1 is established among the current I supplied from the current source Eo, the current If flowing through the temperature-sensitive diode D, and the current Ir2 flowing through the resistor R2. Further, when the temperature T of the temperature sensitive diode D changes, the above-described current If and the voltage Vf generated across the temperature sensitive diode D change according to the following equation 2. However, A, B, and C in Equation 2 indicate coefficients related to the temperature sensitive diode D. The voltage Vf is equal to the detection voltage Vo that the temperature detector 10 outputs according to the temperature.

I = If + Ir2 (Formula 1)
Vf = (AI + BT + C) / (1 + A / R2) (Formula 2)
In the temperature detector 10 configured as described above, the characteristic of the current If with respect to the temperature T changes as shown in FIG. 2A, and the characteristic of the voltage Vf with respect to the temperature T is as shown in FIG. It becomes a change. 2A and 2B, the characteristic lines L1a and L2a when the resistor R2 is not provided (that is, the resistance value is infinite) are indicated by solid lines. In addition, characteristic lines L1b and L2b when the resistance value of the resistor R2 is large are indicated by alternate long and short dash lines. Furthermore, characteristic lines L1c and L2c when the resistance value of the resistor R2 is small are indicated by two-dot chain lines.

  As shown in FIG. 2B, the temperature-sensitive diode D increases as the temperature T decreases, and the voltage Vf decreases as the temperature T increases. Since the voltage Vf is also applied to the resistor R2 connected in parallel, the current Ir2 flowing through the resistor R2 also increases as the voltage Vf increases. On the other hand, since the current I supplied from the current source Eo is constant, if the current Ir2 shunted to the resistor R2 increases, the current If flowing through the temperature sensitive diode D decreases. Therefore, as shown in FIG. 2A, the current If decreases as the temperature T decreases, and the current If increases as the temperature T increases.

  When the resistance value of the resistor R2 is decreased, the current Ir2 increases, but the current If flowing through the temperature sensitive diode D decreases. If the current If decreases, the voltage Vf generated across the temperature sensitive diode D also decreases. The reverse phenomenon occurs when the resistance value of the resistor R2 is increased. For this reason, when the resistance value of the resistor R2 is changed, the current If and the voltage Vf are also changed as a whole, and the slope (change rate) of the characteristic line is also changed by a synergistic effect.

  Therefore, for a plurality of temperature detectors 10 provided with temperature-sensitive diodes D having different slopes of characteristic lines, the slopes of the characteristic lines can be substantially matched by appropriately setting the resistance value of the resistor R2. . For example, assume that there are four characteristic lines L3a, L3b, L3c, and L3d having different slopes as shown in FIG. FIG. 3 shows the characteristic lines with different line thicknesses. At this time, if the resistance value of the resistor R2 included in each temperature detector 10 is appropriately set, the slopes of the characteristic lines almost coincide as shown in FIG. Thus, even if the temperature T changes, the rate of change of the voltage Vf becomes substantially the same, so that the detected voltage Vo output according to the temperature by the temperature detector 10 also has the same rate of change. Therefore, the variation between the temperature detectors 10 at the same temperature T can be reduced.

  According to the first embodiment described above, the circuit configuration is such that the resistor R2 is connected in parallel to the temperature sensitive diode D (see FIG. 1). According to this circuit configuration, even if the gradient of the temperature characteristic of the temperature sensing diode D differs between the temperature detectors 10, the current flowing through the temperature sensing diode D by using the resistor R2 whose resistance value is appropriately adjusted. Since If is adjusted, the slopes of the temperature characteristics almost coincide with each other with a predetermined slope (see FIG. 3). Therefore, it is possible to reduce the variation in the detection voltage Vo detected between the temperature detectors 10 at the same temperature T. Moreover, since it can be easily realized using simple elements and circuits, the cost can be reduced.

[Embodiment 2]
The second embodiment is an example in which the adjustment unit is configured by a resistor as in the first embodiment, and will be described with reference to FIGS. 4 to 6. FIG. 4 is a circuit diagram showing a configuration example of the temperature detector. FIG. 5 is a graph showing changes in current and voltage with respect to temperature. FIG. 6 is a graph showing an adjustment example related to the gradient of the temperature characteristic. For simplicity of illustration and description, the second embodiment will be described with respect to differences from the first embodiment. The same elements as those used in the first embodiment are denoted by the same reference numerals, and the description thereof is omitted.

  The temperature detector 11 shown in FIG. 4 includes a current source Eo, a resistor R1, a temperature sensitive diode D, and the like. The resistor R1 corresponds to an “adjusting unit”, and a variable resistor such as a laser trimming resistor is used. In the first embodiment, the resistor R2 is connected in parallel to the temperature sensitive diode D. In the second embodiment, the resistor R1 is provided between the power source (specifically, the constant voltage source) and the temperature sensitive diode D. The difference is that it intervenes.

  According to the connection of FIG. 4, the relationship shown by the following formula 3 is present between the current If flowing through the temperature sensitive diode D, the current I supplied from the current source Eo, and the current Ir1 flowing through the resistor R1. It holds. Further, when the temperature T of the temperature sensitive diode D changes, the above-mentioned current If and the voltage Vf generated across the temperature sensitive diode D change according to the following equation 4. However, A, B, and C in Equation 4 indicate coefficients related to the temperature sensitive diode D, and the voltage value of the constant voltage source is Vd.

If = I + Ir1 (Formula 3)
Vf = (AI + BT + C) / (1 + A / R1) + AVd / (R1 + A) (Formula 4)
In the temperature detector 11 configured as described above, the characteristics of the current If with respect to the temperature T change as shown in FIG. 5A, and the characteristics of the voltage Vf with respect to the temperature T are as shown in FIG. It becomes a change. In FIGS. 5A and 5B, the characteristic lines L4a and L5a in the case where the resistor R1 is not provided (that is, the resistance value is infinite) are indicated by solid lines. Further, characteristic lines L4b and L5b when the resistance value of the resistor R1 is large are indicated by alternate long and short dash lines. Furthermore, characteristic lines L4c and L5c when the resistance value of the resistor R1 is small are indicated by two-dot chain lines.

  The temperature characteristics of the temperature sensitive diode D are as shown in FIGS. 5A and 5B, and are basically the same as those shown in FIGS. 2A and 2B described in the first embodiment. Show the characteristics. However, in this embodiment, since the resistor R1 is interposed between the power source and the temperature sensing diode D, the current If flowing through the temperature sensing diode D increases by the amount of the current Ir1 flowing through the resistor R1. Since the voltage Vf increases as the current If flowing through the temperature sensitive diode D increases, the current If and the voltage Vf tend to increase overall as the resistance value of the resistor R1 decreases.

  As the resistance value of the resistor R1 is decreased, the current Ir1 increases and the current If flowing through the temperature sensitive diode D also increases. As the current If increases, the voltage Vf generated across the temperature sensitive diode D also increases. When the resistance value of the resistor R1 is increased, the reverse phenomenon occurs. Therefore, when the resistance value of the resistor R1 is changed, the current If and the voltage Vf are also changed as a whole, and the slope (change rate) of the characteristic line is also changed by a synergistic effect.

  Therefore, with respect to the plurality of temperature detectors 11 provided with the temperature sensitive diodes D having different slopes of the characteristic lines, the slopes of the characteristic lines can be substantially matched by appropriately setting the resistance value of the resistor R1. . For example, it is assumed that there are three characteristic lines L6a, L6b, and L6c having different slopes as shown in FIG. FIG. 6 shows the characteristic lines with different line thicknesses. At this time, if the resistance value of the resistor R1 provided in each temperature detector 11 is appropriately set, the slopes of the characteristic lines almost coincide as shown in FIG. 6B. Thus, even if the temperature T changes, the rate of change of the voltage Vf becomes substantially the same, so that the detected voltage Vo output by the temperature detector 11 according to the temperature also has the same rate of change. Therefore, the variation between the temperature detectors 11 at the same temperature T can be reduced.

  According to the second embodiment described above, the circuit configuration is such that the resistor R1 is interposed between the power source and the temperature sensitive diode D (see FIG. 4). According to this circuit configuration, even if the gradient of the temperature characteristic of the temperature sensing diode D differs between the temperature detectors 11, the current flowing through the temperature sensing diode D by using the resistor R1 whose resistance value is appropriately adjusted. Since If is adjusted, the slopes of the temperature characteristics almost coincide with each other with a predetermined slope (see FIG. 6). Therefore, it is possible to reduce the variation in the detection voltage Vo detected between the temperature detectors 11 at the same temperature T. Moreover, since it can be easily realized using simple elements and circuits, the cost can be reduced.

[Embodiment 3]
The third embodiment is an example in which the adjustment unit is configured by a resistor as in the first embodiment, and will be described with reference to FIGS. 7 and 8. FIG. 7 is a circuit diagram showing a configuration example of the temperature detector. FIG. 8 is a graph showing changes in current and voltage with respect to temperature.

  The temperature detector 12 shown in FIG. 7 includes a current source Eo, resistors R1 and R2, a temperature sensitive diode D, and the like. The resistor R1 is interposed between the power source and the temperature sensitive diode D as in the second embodiment, and the resistor R2 is connected in parallel to the temperature sensitive diode D as in the first embodiment.

  According to the connection of FIG. 7, between the current If flowing through the temperature sensitive diode D, the current I supplied from the current source Eo, the current Ir1 flowing through the resistor R1, and the current Ir2 flowing through the resistor R2, The relationship shown by the following formula 5 is established. Further, when the temperature of the temperature sensitive diode D changes, the above-described current If and the voltage Vf generated between both ends of the temperature sensitive diode D satisfy the relationship represented by the following equation (6). However, A, B, and C in Equation 6 indicate coefficients related to the temperature sensitive diode D, and the voltage value of the constant voltage source is Vd. If the voltage Vf is rearranged from Equation 5 and Equation 6, Equation 7 is obtained. Therefore, voltage Vf changes according to Equation 7.

I + Ir1 = If + Ir2 (Formula 5)
Vf = AIf + BT + C (Formula 6)
Vf = (AI + BT + C) / (1 + A / R1 + 1 / R2) + AR2Vd / (R1R2 + AR2 + AR1) (Expression 7)
In the temperature detector 12 configured as described above, the characteristics of the current If with respect to the temperature T change as shown in FIG. 8A, and the characteristics of the voltage Vf with respect to the temperature T are as shown in FIG. It becomes a change. 8A and 8B, the characteristic lines L7a and L8a when the resistors R1 and R2 are not provided (that is, the resistance value is infinite) are indicated by solid lines. The characteristic lines L7b and L8b when the resistance values of the resistors R1 and R2 are large are indicated by alternate long and short dash lines. Furthermore, characteristic lines L7c and L8c when the resistance values of the resistors R1 and R2 are small are indicated by two-dot chain lines.

  As shown in the figure, when the temperature is higher than a certain temperature T5, the current If increases and the voltage Vf decreases as the resistance values of the resistors R1 and R2 increase. On the other hand, when the temperature is lower than T5, the current If decreases and the voltage Vf increases as the resistance values of the resistors R1 and R2 increase. In addition, the characteristic lines can be offset by appropriately setting the resistance values of the resistors R1 and R2.

  That is, as the resistance value of the resistor R1 is decreased, the current Ir1 increases and the current If flowing through the temperature sensitive diode D also increases. On the other hand, when the resistance value of the resistor R2 is increased, the current Ir2 is decreased and the current If flowing through the temperature sensitive diode D is increased. Thus, if the current If increases, the voltage Vf generated across the temperature sensitive diode D also increases. If the resistance value of the resistor R1 is increased or the resistance value of the resistor R2 is decreased, the reverse phenomenon occurs. Therefore, when the resistance values of the resistors R1 and R2 are changed, the current If and the voltage Vf are also changed as a whole, and the slope (change rate) of the characteristic line is also changed by a synergistic effect.

  Therefore, for the plurality of temperature detectors 12 having the temperature sensitive diodes D having different slopes of the characteristic lines, the slopes of the characteristic lines can be made to substantially match by appropriately setting the resistance values of the resistors R1 and R2. It is also possible to match the characteristic lines themselves. Thus, even if the temperature T changes, the rate of change of the voltage Vf becomes substantially the same, or the voltage Vf becomes the same, so that the detection voltage Vo output by the temperature detector 12 according to the temperature is also the same rate of change or the same. Voltage. Therefore, variation among the temperature detectors 12 at the same temperature T can be reduced.

  According to the third embodiment described above, the resistor R1 is interposed between the power source and the temperature sensing diode D, and the resistor R2 is connected in parallel to the temperature sensing diode D (see FIG. 7). . According to this circuit configuration, even if the gradient of the temperature characteristic of the temperature sensing diode D differs between the temperature detectors 12, the temperature sensing diode can be obtained by using the resistors R1 and R2 whose resistance values are appropriately adjusted. Since the current If flowing through D is adjusted, the slopes of the temperature characteristics (or the characteristic lines themselves) are substantially matched (see FIG. 8). Therefore, it is possible to reduce variations in the detected voltage Vo detected between the temperature detectors 12 at the same temperature T. Moreover, since it can be easily realized using simple elements and circuits, the cost can be reduced.

[Embodiment 4]
The fourth embodiment is an example in which the adjustment unit is configured by a resistor as in the first embodiment, and will be described with reference to FIGS. 9 and 10. FIG. 9 is a circuit diagram showing a configuration example of the temperature detector. FIG. 10 is a graph showing changes in current and voltage with respect to temperature.

  The temperature detector 13 shown in FIG. 9 includes a current source Eo, resistors R1, R2, and R3, a temperature sensitive diode D, and the like. The resistor R1 is interposed between the power source and the temperature sensitive diode D as in the second embodiment, and the resistor R2 is the power source (specifically a voltage source) and the temperature sensitive diode as in the first embodiment. It interposes between D. The resistor R3 is interposed between the current source Eo and the connection point P0 of the resistors R1, R2 and the temperature sensitive diode D (anode terminal side).

  According to the connection of FIG. 9, between the current If flowing through the temperature sensitive diode D, the current I supplied from the current source Eo, the current Ir1 flowing through the resistor R1, and the current Ir2 flowing through the resistor R2, The relationship of Formula 5 shown in Embodiment 3 is established. Further, when the temperature of the temperature-sensitive diode D changes, the above-described current If and the voltage Vf generated between both ends of the temperature-sensitive diode D satisfy the relationship of Expression 6 shown in the third embodiment. Therefore, voltage Vf changes according to Equation 7 shown in the third embodiment.

  In the temperature detector 13 configured as described above, the characteristics of the current If and the voltage Vf with respect to the temperature T are the same changes as in FIG. 8 described in the third embodiment. Here, since the resistor R3 is interposed between the current source Eo and the connection point P0, each characteristic of the current If and the voltage Vf when the resistance value of the resistor R3 is changed is shown in FIG. Appropriate resistance values are set for the resistors R1 and R2, respectively.

  10A and 10B, when the resistance value of the resistor R3 is small, the characteristic lines L9a and L10a are obtained. When the resistance value is larger than this, the characteristic lines L9b and L10b are obtained. When the resistance value is larger, the characteristic lines L9c and L10c are obtained. That is, as indicated by the wavy arrow, the characteristic line is offset in the vertical direction in accordance with the resistance value of the resistor R3.

  Therefore, for the plurality of temperature detectors 13 having the temperature sensitive diodes D having different slopes of the characteristic lines, the resistance values of the resistors R1 and R2 are appropriately set, and the resistance value of the resistor R3 is appropriately set. By setting, the characteristic lines themselves can be matched. Since the voltage Vf remains the same even when the temperature T changes in this way, the detection voltage Vo output by the temperature detector 13 according to the temperature also becomes the same voltage. Therefore, the variation between the temperature detectors 13 at the same temperature T can be eliminated.

  According to the fourth embodiment described above, the resistor R1 is interposed between the power source and the temperature sensing diode D, the resistor R2 is connected in parallel to the temperature sensing diode D, and the current source Eo and the connection point P0 are connected. The circuit configuration is such that a resistor R3 is interposed therebetween (see FIG. 9). According to this circuit configuration, even if the gradient of the temperature characteristic of the temperature sensing diode D differs between the temperature detectors 13, by using the resistor R1 and the resistor R2 whose resistance values are appropriately adjusted, the temperature sensing diode is used. Since the current If flowing through D is adjusted, the slopes of the temperature characteristics (or the characteristic lines themselves) are substantially matched (see FIG. 8). Therefore, it is possible to reduce the variation in the detection voltage Vo detected between the temperature detectors 13 at the same temperature T. Moreover, since it can be easily realized using simple elements and circuits, the cost can be reduced.

[Embodiment 5]
The fifth embodiment is an example in which the adjustment unit is configured by a current source, and will be described with reference to FIG. FIG. 11 is a circuit diagram showing a configuration example of the temperature detector. In the fifth embodiment, a current source E2 is used instead of the resistor R2 shown in FIG. 1 of the first embodiment.

  A temperature detector 14 shown in FIG. 11 includes current sources Eo and E2, a temperature sensitive diode D, and the like. The current source E2 is connected in parallel to the temperature sensitive diode D in the same manner as the resistor R2 shown in FIG. According to this connection, the circuit operates in the same manner as the circuit shown in FIG. That is, instead of the current Ir2 flowing through the resistor R2, only the current Ie2 flows through the current source E2. Therefore, by adjusting the current Ie2 to the same current value as that of the current Ir2, the same effect as that of the third embodiment can be obtained.

[Embodiment 6]
The sixth embodiment is an example in which the adjustment unit is configured by a current source as in the fifth embodiment, and will be described with reference to FIG. FIG. 12 is a circuit diagram showing a configuration example of the temperature detector. In the sixth embodiment, a current source E1 is used instead of the resistor R1 shown in FIG. 4 of the second embodiment.

  A temperature detector 15 shown in FIG. 12 includes current sources Eo and E2, a temperature sensitive diode D, and the like. The current source E2 is interposed between the power source (specifically, the voltage source) and the temperature sensitive diode D in the same manner as the resistor R1 shown in FIG. 4 of the second embodiment. This connection operates in the same manner as the circuit shown in FIG. 4 of the second embodiment. That is, instead of the current Ir1 flowing through the resistor R1, only the current Ie1 flows through the current source E1. Therefore, by adjusting the current Ie1 to the same current value as the current Ir1, the same effect as that of the second embodiment can be obtained.

[Embodiment 7]
The seventh embodiment is an example in which the adjustment unit is configured by a resistor and a current source, and will be described with reference to FIG. FIG. 13 is a circuit diagram showing a configuration example of the temperature detector. In the seventh embodiment, a current source E1 is used instead of the resistor R1 shown in FIG. 7 of the third embodiment.

  A temperature detector 16 shown in FIG. 13 includes current sources Eo and E1, a resistor R2, a temperature sensitive diode D, and the like. The current source E1 is interposed between the power source (specifically, the voltage source) and the temperature sensitive diode D in the same manner as in the sixth embodiment. This connection operates in the same manner as the circuit shown in FIG. 7 of the third embodiment. That is, instead of the current Ir1 flowing through the resistor R1, only the current Ie1 flows through the current source E1. Therefore, by adjusting the current Ie1 to the same current value as that of the current Ir1, the same effect as that of the third embodiment can be obtained.

  In this embodiment, the resistor R2 shown in FIG. 7 of the third embodiment is left as it is, and the current source E1 is used instead of the resistor R1. Instead of this configuration, the resistor R1 shown in FIG. 7 of the third embodiment may be left as it is, and a circuit configuration using the current source E2 instead of the resistor R2 may be employed. According to this circuit configuration, only the current Ie2 flows through the current source E2 instead of the current Ir2 flowing through the resistor R2. Therefore, by adjusting the current Ie2 to the same current value as that of the current Ir2, the same effect as that of the third embodiment can be obtained.

[Embodiment 8]
The eighth embodiment is an example in which the adjustment unit is configured by a resistor and a current source, and will be described with reference to FIG. FIG. 14 is a circuit diagram showing a configuration example of the temperature detector. In the eighth embodiment, a current source E2 is connected in parallel to the temperature sensitive diode D together with the resistor R2 shown in FIG. 7 of the third embodiment.

  A temperature detector 17 shown in FIG. 14 includes current sources Eo and E2, resistors R1 and R2, a temperature sensitive diode D, and the like. The current source E2 is connected in parallel to the temperature sensitive diode D in the same manner as in the fifth embodiment. According to this connection, the current If flowing through the temperature sensitive diode D, the current I supplied from the current source Eo, the current Ir1 flowing through the resistor R1, the current Ir2 flowing through the resistor R2, and the current flowing through the current source E2 The relationship shown by the following formula 8 is established with Ie2. Further, when the temperature of the temperature-sensitive diode D changes, the above-described current If and the voltage Vf generated between both ends of the temperature-sensitive diode D have a relationship represented by the following equation (9). However, A, B, and C in Equation 9 indicate coefficients related to the temperature sensitive diode D, and the voltage value of the constant voltage source is Vd. When the voltage Vf is rearranged from Equation 8 and Equation 9, Equation 10 is obtained. Therefore, voltage Vf changes according to Equation 10.

I + Ir1 = If + Ir2 + Ie2 (Formula 8)
Vf = AIf + BT + C (Equation 9)
Vf = {A (I-Ie2) + BT + C} / (1 + A / R2) + AR2Vd / (R1R2 + AR1 + AR2) (Equation 10)
According to the circuit configuration of FIG. 14, only the current Ir2 and the current Ie2 flow instead of the current Ir2 shown in FIG. 7 of the third embodiment. Therefore, by adjusting the sum of current Ir2 and current Ie2 to the same current value as current Ir2 shown in FIG. In this circuit configuration, even when a fixed resistor is used as the resistor R2, the sum of the current Ir2 and the current Ie2 can be adjusted by the current source E2.

  In this embodiment, the current source E2 is connected in parallel like the resistor R2. Instead of this configuration, the current source E1 may be connected in parallel to the resistor R1. According to this circuit configuration, only the current Ir1 and the current Ie1 flow instead of the current Ir1 shown in FIG. 7 of the third embodiment. Therefore, by adjusting the sum of current Ir1 and current Ie1 to the same current value as current Ir1 shown in FIG. 7 of the third embodiment, the same operational effects as in the third embodiment can be obtained. In this circuit configuration, even when a fixed resistor is used as the resistor R1, the sum of the current Ir1 and the current Ie1 can be adjusted by the current source E1.

  The number of current sources and resistors connected in parallel to the current source E1 and the number of current sources and resistors connected in parallel to the temperature sensitive diode D may be set arbitrarily. Even in this case, the same effect as that of the third embodiment can be obtained by adjusting the sum of the currents flowing through the elements connected in parallel.

[Embodiment 9]
Embodiment 9 is an example of adjusting the resistance value of a laser trimming resistor provided as an adjustment unit, and will be described with reference to FIGS. 15 to 18. FIG. 15 is a schematic diagram illustrating a configuration example of the adjusting device. In FIG. 16, the structural example of a laser trimming resistor is shown with a longitudinal cross-sectional view. FIG. 17 is a plan view showing an example of changing the resistance value of the laser trimming resistor. FIG. 18 shows an example of adjusting the resistance value by the adjusting device.

  In the ninth embodiment, an example in which a laser trimming resistor is used as the resistor R2 included in the temperature detector 10 shown in the first embodiment and the resistance value of the laser trimming resistor is adjusted will be described. The laser trimming resistor may be any element as long as the resistance value is changed by laser beam irradiation. For example, a chip resistor or a network resistor is applicable.

  The adjusting device 20 shown in FIG. 15 is a device that adjusts the resistance value of the temperature detector resistor (that is, the resistor R2), and includes a laser processing unit 21, a control unit 22, a converting unit 24, a temperature adjusting unit 25, and the like. Have. The laser processing unit 21 corresponds to a “resistance adjustment unit” and changes the resistance value by irradiating a predetermined position of the resistor R2 with a laser beam in accordance with a signal commanded from the control unit 22.

  Here, the structure of the laser trimming resistor RL used as the resistor R2 will be described with reference to FIG. The laser trimming resistor RL shown in FIG. 16 includes a resistance film 26a, a protective coat film 26b, an electrode 26f, a base 26g, and the like. The resistance film 26a corresponding to the “resistor” is interposed between the protective coat film 26b and the base body 26g. A normal resistor is further coated with a protective film with a resin film, whereas the laser trimming resistor RL exposes the resistance film 26a and covers it with a protective coating film 26b that can transmit a laser beam. The electrode 26f, the base 26g, and the like are covered with tin plating 26c, nickel plating 26d, copper plating 26e, and the like.

  When the laser beam passes through the protective coat film 26b and is irradiated onto the resistance film 26a, the resistance value changes when the irradiated resistance film 26a is oxidized and becomes a non-conductor. The mode of irradiating the resistance film 26a with the laser beam is arbitrary, but for example, a linear slit 26h as shown in FIG. 17 corresponds to the shape, number, and length of the slit 26h, and the laser trimming resistor RL (resistor The resistance value of R2) can be adjusted.

  The control unit 22 includes a storage unit 23, and controls the operation of a control target (that is, the laser processing unit 21, the temperature adjustment unit 25, and the like). In the present embodiment, the control unit 22 is configured to operate by executing a program around the CPU, but may be configured to operate by hardware logic. The storage unit 23 stores a program that controls the entire adjustment device 20, signals and data transmitted to the control target, and data that indicates a relationship between a temperature and a voltage that will be described later. For the storage unit 23, any recording medium capable of recording these signals, data, and the like can be applied. For example, a semiconductor memory (including an IC card or a memory card), a magnetic recording medium (tape, disk, drum, etc.), optical One or more of magnetic recording media (DVD, MD, MO, etc., regardless of the form of disk, card, etc.).

  The conversion unit 24 converts the voltage Vf generated across the temperature sensitive diode D into an information form (for example, digital data) that can be processed by the control unit 22. The temperature adjustment unit 25 adjusts the temperature of the temperature sensitive diode D according to a signal commanded from the control unit 22.

  An example in which the resistance value of the resistor R2 is adjusted by the adjusting device 20 configured as described above will be described with reference to FIG. The storage unit 23 stores relation points P1, P2, and the like that specify the characteristic line L9 shown in FIG. Since the characteristic line L9 is a straight line, it is sufficient to store at least two related points. In the example of FIG. 18, a relation point P1 indicating the relationship between the temperature value T1 and the voltage value V1, and a relationship point P2 indicating the relationship between the temperature value T2 (where T2> T1) and the voltage value V2 (where V2 <V1). It shows.

  First, the temperature adjustment unit 25 adjusts the temperature sensitive diode D to the temperature value T1, and the current I is supplied from the current source Eo while maintaining the temperature value T1. When the current I is supplied, a voltage Vf is generated between both ends of the temperature sensitive diode D. Therefore, a laser beam is irradiated from the laser processing unit 21 to a predetermined position of the resistor R2 so that the voltage Vf becomes the voltage value V1.

  When the adjustment of the voltage value V1 is finished, the temperature adjustment unit 25 adjusts the temperature sensitive diode D to the temperature value T2, and the current I is supplied from the current source Eo with the temperature value T2. When the current I is supplied again, a voltage Vf is generated between both ends of the temperature sensitive diode D. Therefore, a laser beam is irradiated from the laser processing unit 21 to a predetermined position of the resistor R2 so that the voltage Vf becomes the voltage value V2. .

  When the adjustment of the voltage value V1 and the voltage value V2 is thus completed, the temperature characteristic of the temperature sensitive diode D can be set as indicated by the characteristic line L9. If the resistance values of the resistors R2 included in the other temperature detectors 10 are similarly adjusted, the temperature characteristic gradients (or the characteristic lines themselves) between the temperature detectors 10 are substantially the same. Therefore, it is possible to reduce the variation in the detection voltage Vo detected between the temperature detectors 10 at the same temperature T.

  According to the ninth embodiment described above, the following effects can be obtained.

  The resistor R2 provided as the adjustment unit of the temperature detector 10 is configured to process a part of the element to adjust the resistance value (see FIGS. 15 and 18). According to this configuration, the resistor R2 having a necessary resistance value is obtained by processing a part of the element in order to make the inclination of the temperature characteristic and the temperature characteristic itself substantially coincide with each other. The resistor R2 matched to the temperature sensitive diode D having different temperature characteristics can be easily procured.

  The adjusting device 20 adds a temperature adjusting unit 26 that adjusts the temperature of the temperature-sensitive diode D for each of the plurality of temperature values, and adds to the temperature-sensitive diode D for each of the temperature values T1 and T2 adjusted by the temperature adjusting unit 26. A laser processing unit 21 that adjusts the resistance value by processing a part of the resistor R2 so that the voltage Vf becomes the voltage values V1 and V2 related to the temperature values T1 and T2 (see FIG. 15, see FIG. According to this configuration, the temperature of the temperature sensing diode D is actually set to the temperature value T1 or the temperature value T2, and the resistor R2 is set to have a resistance value indicating the voltage values V1 and V2 related to the temperature values T1 and T2. Is processed. Therefore, it is possible to easily procure the resistor R2 that matches the temperature characteristic of the temperature sensitive diode D, and to make the characteristic line L9.

  A voltage in which the temperature of the temperature sensing diode D is adjusted for each of the temperature values T1 and T2 (first step), and the voltage Vf applied to the temperature sensing diode D for each adjusted temperature is related to each temperature. A part of the element applied to the resistor R2 is processed so as to have the values V1 and V2, and the resistance value is adjusted (second step). According to this configuration, the temperature of the temperature sensing diode D is actually set to the temperature value T1 or the temperature value T2, and the resistor R2 is set to have a resistance value indicating the voltage values V1 and V2 related to the temperature values T1 and T2. Is processed. Therefore, it is possible to easily procure the resistor R2 that matches the temperature characteristic of the temperature sensitive diode D, and to make the characteristic line L9.

[Embodiment 10]
The tenth embodiment is an example of a semiconductor device provided with the temperature detector shown in the first embodiment, and will be described with reference to FIG. FIG. 19 is a circuit diagram illustrating a configuration example of a semiconductor device. A semiconductor device 30 shown in FIG. 19 includes a transistor Q and the like in addition to the temperature detector 10 shown in the first embodiment. The transistor Q corresponds to a “semiconductor element” and is, for example, an IGBT having a gate terminal G, a collector terminal C, and an emitter terminal E. Each of these terminals is connected to an external circuit connection terminal of the semiconductor device 30.

  When the thin film resistor R5 is used instead of the resistor R2 shown in FIG. 1 of the first embodiment, the thin film resistor R5, the temperature sensitive diode D, the transistor Q, and the like can be formed as the semiconductor chip S1. Since a thin film resistor R5 having a small temperature coefficient is appropriate, it is desirable to include a compound of a metal element and a Group 14 element. Examples of the compound include metal silicides (eg, CrSi, CoSi, etc.), chromium alloys (eg, NiCr, CoCr, etc.), tungsten alloys (eg, TiW, MoW, etc.), tantalum alloys (eg, TaN, SiTa, etc.), etc. Is applicable. On the other hand, when it is a resistor other than the thin film resistor, the temperature sensitive diode D, the transistor Q, and the like are formed as the semiconductor chip S1. Since heat tends to concentrate on the central portion of the semiconductor chip S1, it is desirable to form the semiconductor chip S1 by disposing the temperature sensitive diode D in the central portion in order to output a more accurate detection voltage Vo.

  In the semiconductor device 30 configured as described above, the temperature detector 10 detects the temperature of the semiconductor chip S1 that changes with the heat generated by the operation of the transistor Q, and outputs the detection voltage Vo. As shown in the first embodiment, the detection voltage Vo output by the temperature detector 10 in accordance with the temperature has the same rate of change, so that variations can be reduced also in the semiconductor device 30 including the temperature detector 10. it can.

  According to the tenth embodiment described above, the semiconductor device 30 includes the temperature detector 10 in which the transistor Q is formed and outputs a voltage corresponding to the temperature of the heat generated with the operation of the transistor Q. (See FIG. 19). According to this configuration, variations in temperature detected by the temperature detector 10 provided in the semiconductor device 30 can be reduced.

  Further, since the thin film resistor R5 has a small (low) temperature coefficient, the resistance value hardly changes even when the temperature of the thin film resistor R5 itself changes. Since the temperature detected by the temperature detector 10 including the thin film resistor R5 is less varied between the semiconductor devices 30, the semiconductor device 30 can be stably operated.

  In FIG. 19, only one transistor Q is formed in the semiconductor chip S1, but two or more transistors Q may be formed. Moreover, in the case where the temperature changes for each part of the semiconductor chip S1, two or more temperature detectors 10 may be provided as necessary.

[Embodiment 11]
The eleventh embodiment is an example of a semiconductor device provided with the temperature detector shown in the third embodiment, and will be described with reference to FIG. FIG. 20 is a circuit diagram illustrating a configuration example of a semiconductor device. A semiconductor device 31 shown in FIG. 20 includes a transistor Q and the like in addition to the temperature detector 12 shown in the third embodiment.

  When thin film resistors R4 and R5 are used instead of the resistors R1 and R2 shown in FIG. 7 of the third embodiment, the thin film resistors R4 and R5, the temperature sensitive diode D, the transistor Q, and the like are used as the semiconductor chip S2. Can be formed. Suitable resistors for the thin film resistors R4 and R5 are the same as those in the tenth embodiment. On the other hand, when it is a resistor other than the thin film resistor, the temperature sensitive diode D, the transistor Q, and the like are formed as the semiconductor chip S1. In order to output a more accurate detection voltage Vo, it is desirable to form the semiconductor chip S2 by disposing the temperature sensitive diode D at the center.

  In the semiconductor device 31 configured as described above, the temperature detector 12 detects the temperature of the semiconductor chip S2 that changes with the heat generated by the operation of the transistor Q, and outputs the detection voltage Vo. As shown in the third embodiment, the detection voltage Vo output from the temperature detector 12 in accordance with the temperature has the same rate of change. Therefore, the semiconductor device 31 including the temperature detector 12 can also be reduced in variation. it can.

  According to the eleventh embodiment described above, the semiconductor device 30 includes the temperature detector 12 that outputs the voltage corresponding to the temperature of the heat generated by the operation of the transistor Q while the transistor Q is formed. (See FIG. 20). According to this configuration, the variation in temperature detected by the temperature detector 12 provided in the semiconductor device 31 can be reduced, and the temperature difference generated between the semiconductor devices 31 can be reduced. The point that two or more transistors Q are formed in the semiconductor chip S2 and the point that two or more temperature detectors 12 are provided are the same as in the tenth embodiment.

[Other Embodiments]
Although the best mode for carrying out the present invention has been described according to the first to eleventh embodiments, the present invention is not limited to this mode. In other words, various forms can be implemented without departing from the scope of the present invention. For example, the following forms may be realized.

  In the first to eighth embodiments described above, variable resistors are used as the resistors R1, R2, and R3 as the adjusting units. Instead of this form, when appropriate resistance values are known in advance as the resistors R1, R2, and R3, a fixed resistor having the appropriate resistance value may be used. Even in this case, variation in temperature detected between the temperature detectors can be reduced.

  In Embodiments 1 to 11 described above, a temperature sensitive diode D (specifically, a GaAlAs diode or a silicon diode) is used as a temperature sensitive element. Instead of this form, other temperature sensitive elements may be used. Examples of other temperature sensitive elements include rhodium iron resistors, germanium resistors, platinum resistors, ruthenium oxide resistors, and the like. Even in these temperature sensing elements, the adjustment unit absorbs the variation in temperature characteristics of the temperature sensing element, so that the variation in the detection voltage Vo detected between the temperature detectors at the same temperature T can be reduced. it can.

  In the above-described ninth embodiment, the laser processing unit 21 is used as a resistance value adjusting unit that processes a part of the element to adjust the resistance value (see FIG. 15). Instead of this form, other tools may be used as the resistance value adjusting unit. For example, a case where a trimming resistor whose resistance value can be changed by processing using another tool (for example, a driver or a cutter) is used for the adjustment unit. Even when other tools are used, the resistance value of the resistor used in the adjustment unit can be set appropriately, so that the variation in the detection voltage Vo detected between the temperature detectors at the same temperature T Can be reduced.

  In the ninth embodiment described above, the adjustment device 20 that includes the laser processing unit 21 as the resistance value adjustment unit and adjusts the resistance value of the resistor R2 is used (see FIG. 15). Instead of this form, an adjustment device including a current value adjustment unit that adjusts each current value may be used for the current Ie1 supplied from the current source E1 and the current Ie2 supplied from the current source E2. The current value adjustment unit adjusts the current value of the current supplied from the current source E1 or the current source E2 described in the fifth to eighth embodiments. Even when an adjustment device having such a current value adjustment unit is used, the current flowing through the circuit can be set appropriately, so that the detection detected between the temperature detectors at the same temperature T Variations in the voltage Vo can be reduced.

  In the tenth embodiment described above, the semiconductor device 30 including the temperature detector 10 shown in the first embodiment is configured (see FIG. 19), and in the eleventh embodiment, the temperature detector 12 shown in the third embodiment is provided. The semiconductor device 31 was configured (see FIG. 20). Instead of these forms, a semiconductor device including another temperature detector may be configured. Specifically, a semiconductor device provided with each temperature detector shown in Embodiments 2, 4, 5, 6, 7, and 8 is configured. Also in these semiconductor devices, since the function and effect of each temperature detector shown in the second, fourth, fifth, sixth, seventh and eighth embodiments are inherited, the same function and effect as in the tenth and eleventh embodiments can be obtained. .

10, 11, 12, 13, 14, 15, 16, 17 Temperature detector 20 Adjustment device 21 Laser processing section (resistance adjustment section)
25 Temperature adjuster 30, 31 Semiconductor device D Temperature sensitive diode (temperature sensitive element)
Eo Current source (power source)
E1, E2 Current source (adjustment unit)
R1, R2, R3 resistors (adjustment part)
R4, R5 thin film resistors (adjustment part)
Q transistor (semiconductor element)

Claims (10)

In a temperature detector that includes a temperature sensitive element and outputs a voltage corresponding to the temperature,
A temperature detector, comprising: an adjustment unit that adjusts a current flowing through the temperature-sensitive element according to a change in temperature so that a gradient of a temperature characteristic that differs for each temperature-sensitive element becomes a predetermined gradient.   2. The temperature detector according to claim 1, wherein the adjustment unit adjusts a current flowing through the temperature-sensitive element according to a change in temperature so that the temperature characteristics having a predetermined inclination are offset and coincided with each other. .   The temperature detector according to claim 1, wherein the adjustment unit connects one or both of a resistor and a current source in parallel with the temperature sensitive element.   3. The temperature detector according to claim 1, wherein one or both of a resistor and a current source is interposed between the temperature sensing element and a power source. The adjustment unit is
Interposed between the temperature sensing element and the power source, one or both of the first resistor and the first current source;
Connected in parallel with the temperature sensitive element, one or both of the second resistor and the second current source,
The temperature detector according to claim 1, comprising:   The temperature detector according to claim 3, wherein the resistor provided as the adjusting unit adjusts a resistance value by processing a part of the element. A temperature adjustment unit for adjusting the temperature of the temperature sensing element for each temperature value for a plurality of temperature values;
The part of the element applied to the resistor according to claim 6, such that a voltage applied to the temperature sensitive element becomes a voltage value related to each temperature for each temperature adjusted by the temperature adjustment unit. A resistance value adjusting unit for adjusting the resistance value by processing;
A device for adjusting a resistor for a temperature detector, comprising: A first step of adjusting the temperature of the temperature sensing element for each temperature value for a plurality of temperature values;
The part of the element applied to the resistor according to claim 6, wherein the voltage applied to the temperature-sensitive element has a voltage value related to each temperature for each temperature adjusted in the first step. A second step of adjusting the resistance value by processing;
A method for adjusting a resistor for a temperature detector, comprising:   A temperature detector according to any one of claims 1 to 6 is provided, wherein a semiconductor element is formed, and a voltage corresponding to a temperature of heat generated by the operation of the semiconductor element is output. A semiconductor device.   The semiconductor device according to claim 9, wherein the thin film resistor provided as the adjusting unit includes a compound of a metal element and a group 14 element.

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