JP2011029269A - Anodic bonding apparatus, and anodic bonding method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an anodic bonding apparatus which has simple constitution and can anodically bond three layers of a silicon substrate, a glass pedestal and a silicon pedestal. <P>SOLUTION: The anodic bonding apparatus is configured to arrange the glass pedestal 2 between a silicon tube 1 and a silicon chip 3 and to anodically bond respective bonding surfaces, and includes: an anode electrode stage 13 on which the silicon tube 1, glass pedestal 2 and silicon chip 3 are mounted one over another so that the silicon tube 1 abuts on the anode electrode stage; an anode electrode 14 to be abutted on the silicon chip 3; a cathode electrode 15 to be abutted on the glass pedestal 2; a primary power source 11 for applying a predetermined voltage between the anode electrode stage 13 and cathode electrode 15; a secondary power source 12 for applying a predetermined voltage between the anode electrode 14 and cathode electrode 15; and a heating means of heating a bonding surface between the silicon tube 1 and glass pedestal 2 and a bonding surface between the glass pedestal 2 and silicon chip 3. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to an anodic bonding apparatus and an anodic bonding method.

  Conventionally, a silicon diaphragm type pressure sensor is known. This pressure sensor has a configuration in which a silicon substrate having a diaphragm portion and a silicon pedestal are bonded to opposite surfaces of the glass pedestal, respectively. This pressure sensor is manufactured by first anodic bonding a silicon pedestal to one surface of a glass pedestal and then anodic bonding a silicon substrate to a surface of the glass pedestal opposite to the silicon pedestal bonding surface.

  In anodic bonding, bonding is performed with the glass side as the cathode and the silicon side as the anode. For this reason, when joining the glass pedestal and the silicon pedestal, it is necessary to use the glass pedestal as the cathode and the silicon pedestal as the anode. When joining the glass pedestal and the silicon substrate, the glass pedestal is used as the cathode and the silicon substrate is used. It is necessary to use the anode.

  Therefore, when these components arranged in the order of the silicon substrate, the glass pedestal, and the silicon pedestal are subjected to anodic bonding, a voltage is applied from one direction, and these two points cannot be bonded in one step. For this reason, conventionally, the joining process of these three parts is divided into two processes, and the voltage application direction is changed.

  However, if the bonding is performed in two steps, not only the manufacturing time is lengthened, but also the result of increasing the probability of adversely affecting the quality of the pressure sensor due to scratches and dirt generated by handling.

  In Patent Document 1, a silicon substrate, a first glass substrate that is anodically bonded to one surface of the silicon substrate, and an application for anodic bonding of the silicon substrate and the first glass substrate to the other surface of the silicon substrate are disclosed. An anodic bonding structure is disclosed that includes a second glass substrate that is anodically bonded through an anodic bondable layer that enables anodic bonding with an applied electric field in the same direction as the electric field direction.

JP 2003-306351 A

  In Patent Document 1, it is necessary to separately form a glass layer and a metal layer or a silicon layer as an anodic bondable layer. When this anodic bondable layer is applied to a pressure sensor, thermal stress due to the difference in thermal expansion coefficient between these anodic bondable layer and the substrate may cause a detection error. Further, in a pressure sensor into which a high pressure medium is introduced, the bonding strength may be insufficient. Therefore, the structure described in Patent Document 1 cannot be adopted in the pressure sensor. Furthermore, in Patent Document 1, the manufacturing time cannot be reduced.

  The present invention has been made against the background of such circumstances, and an object of the present invention is an anodic bonding apparatus capable of three-layer anodic bonding of a silicon substrate, a glass pedestal, and a silicon pedestal with a simple configuration, and An anodic bonding method is provided.

  An anodic bonding apparatus according to an aspect of the present invention is an anodic bonding apparatus in which a glass substrate is disposed between a first substrate and a second substrate, and each bonding surface is anodic bonded. The glass substrate and the second substrate are stacked so that the first substrate is placed in contact with the anode substrate, the anode electrode is in contact with the second substrate, and the glass substrate is contacted. A first DC power source that applies a predetermined voltage between the cathode electrode, the anode electrode stage, and the cathode electrode; a second DC power source that applies a predetermined voltage between the anode electrode and the cathode electrode; And a heating means for heating the bonding surface of the first substrate and the glass substrate and the bonding surface of the glass substrate and the second substrate. Thereby, a 1st board | substrate, a glass substrate, and a 2nd board | substrate can be once arrange | positioned with a simple structure, and these can be collectively anodic-bonded.

  An anodic bonding apparatus according to a second aspect of the present invention is the anodic bonding apparatus according to the above anodic bonding apparatus, wherein the anode electrode is in contact with a surface facing the bonding surface of the second substrate so as to apply a predetermined load. In addition, the bonding surfaces are anodically bonded. Thereby, the position shift of a 1st board | substrate, a glass substrate, and a 2nd board | substrate can be prevented.

  An anodic bonding apparatus according to a third aspect of the present invention is characterized in that, in the above anodic bonding apparatus, the cathode electrode is in contact with at least a pair of opposing side surfaces of the glass substrate so as to apply a predetermined load. To do. Thereby, the position shift of a 1st board | substrate, a glass substrate, and a 2nd board | substrate can be prevented.

  An anodic bonding apparatus according to a fourth aspect of the present invention is the anodic bonding apparatus according to the above aspect, wherein storage means for storing the application voltage and application time of the first DC power supply and the application voltage and application time of the second DC power supply is stored. It is characterized by comprising. Thereby, the optimal voltage and application time can be easily selected according to the shape, bonding conditions, etc. of the first substrate, the glass substrate, and the second substrate.

  An anodic bonding method according to a fifth aspect of the present invention is an anodic bonding method in which a glass substrate is disposed between a first substrate and a second substrate, and each bonding surface is anodic bonded. And placing the glass substrate and the second substrate on the anode electrode stage so that the first substrate is in contact with the substrate, contacting the anode electrode with the second substrate, and the glass substrate A step of abutting the cathode electrode on the anode electrode, applying a predetermined voltage simultaneously between the anode electrode stage and the cathode electrode and between the anode electrode and the cathode electrode for a predetermined time, Joining. Thereby, it is possible to perform anodic bonding of the first substrate, the glass substrate, and the second substrate only once, and to prevent damage due to handling.

  An anodic bonding method according to a sixth aspect of the present invention is an anodic bonding method in which a glass substrate is disposed between a first substrate and a second substrate, and each bonding surface is anodic bonded. And placing the glass substrate and the second substrate on the anode electrode stage so that the first substrate is in contact with the substrate, contacting the anode electrode with the second substrate, and the glass substrate Abutting a cathode electrode on the substrate, applying a predetermined voltage between the anode electrode stage and the cathode electrode for a predetermined time to anodic bond the first substrate and the glass substrate, and the anode electrode And a step of applying a predetermined voltage between the first substrate and the cathode electrode for a predetermined time to anodic bond the second substrate and the glass substrate. Thereby, it is possible to perform anodic bonding of the first substrate, the glass substrate, and the second substrate only once, and to prevent damage due to handling.

  An anodic bonding method according to a seventh aspect of the present invention is the anodic bonding method described above, wherein the anode electrode abuts on a surface facing the bonding surface of the second substrate so as to apply a predetermined load. In the state, the bonding surfaces are anodically bonded. Thereby, the position shift of a 1st board | substrate, a glass substrate, and a 2nd board | substrate can be prevented.

  An anodic bonding method according to an eighth aspect of the present invention is the anodic bonding method described above, wherein the cathode electrode is brought into contact with at least a pair of opposing side surfaces of the glass substrate so as to apply a predetermined load. Features. Thereby, the position shift of a 1st board | substrate, a glass substrate, and a 2nd board | substrate can be prevented.

  According to the present invention, it is possible to provide an anodic bonding apparatus and an anodic bonding method capable of three-layer anodic bonding of a first substrate, a glass substrate, and a second substrate with a simple configuration.

It is a figure which shows the structure of the anodic bonding apparatus which concerns on Embodiment 1. FIG. FIG. 5 is a manufacturing process diagram for describing the anodic bonding method according to the first embodiment. FIG. 5 is a manufacturing process diagram for describing the anodic bonding method according to the first embodiment.

  Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a diagram showing a configuration of an anodic bonding apparatus 10 according to the present embodiment. As shown in FIG. 1, the anodic bonding apparatus 10 according to the present embodiment includes a primary power supply 11, a secondary power supply 12, an anode electrode stage 13, an anode electrode 14, and a cathode electrode 15.

  On the anode electrode stage 13, a laminated body in which a glass substrate is disposed between the first substrate and the second substrate is placed. In the present embodiment, an example will be described in which the silicon tube 1 is used as the first substrate, the silicon chip 3 is used as the second substrate, and the glass pedestal 2 is used as the glass substrate. A diaphragm portion is formed on the silicon chip 3. A pressure sensor is configured by bonding the silicon chip 3, the glass pedestal 2, and the silicon tube 1.

  The silicon tube 1 is provided with a through hole 1a that penetrates from the upper end to the lower end. The glass pedestal 2 is also provided with a through hole 2a corresponding to the position where the through hole 1a is provided. The diameter of the through hole 2a is smaller than the diameter of the through hole 1a. The anodic bonding apparatus 10 joins two places of the joining surface between the silicon tube 1 and the glass pedestal 2 and the joining surface between the glass pedestal 2 and the silicon chip 3.

  A laminated body in which the silicon tube 1, the glass pedestal 2, and the silicon chip 3 are stacked in this order is placed on the anode electrode stage 13 so that the silicon tube 1 contacts the anode electrode stage 13. The silicon tube 1, the glass pedestal 2, and the silicon chip 3 are sequentially transported to the anode electrode stage 13 by transport means not shown in FIG. The anode electrode stage 13 is provided with suction means (not shown) for fixing the silicon tube 1, the glass pedestal 2, and the silicon chip 3 by evacuating the through holes 1a and 2a.

  In the present embodiment, a dummy substrate 4 made of conductive silicon or the like is disposed on the silicon chip 3. This dummy substrate 4 is disposed in order to efficiently conduct the voltage applied during anodic bonding to the entire surface of the silicon chip 3. However, when the applied voltage from the anode electrode 14 is sufficiently conducted, the dummy substrate 4 may not be disposed.

  The anode electrode 14 and the cathode electrode 15 are movably provided. The anode electrode 14 is brought into contact with the surface of the silicon chip 3 opposite to the bonding surface with the glass pedestal 2. The cathode electrode 15 is brought into contact with a side surface other than the two bonding surfaces of the glass pedestal 2.

  The primary power supply 11 applies a predetermined voltage required for joining the silicon tube 1 and the glass pedestal 2 between the anode electrode stage 13 and the cathode electrode 15. The secondary power source 12 applies a predetermined voltage required for joining the glass pedestal 2 and the silicon chip 3 between the anode electrode 14 and the cathode electrode 15.

  The voltage to be applied is appropriately designed according to the material conditions such as the shape and material of the substrate and the bonding conditions such as the heating temperature and bonding time of the bonding surface. The voltage may be applied simultaneously between the anode electrode stage 13 and the anode electrode 14, or both the anode electrode 14 and the cathode electrode 15, or may be applied one by one. This will be described later.

  The applied voltages of the primary power supply 11 and the secondary power supply 12, the positions of the anode electrode 14 and the cathode electrode 15 and the like are controlled by a control unit (not shown). Although not shown in FIG. 1, the anodic bonding apparatus 10 includes heating means for heating the bonding surface between the silicon tube 1 and the glass pedestal 2 and the bonding surface between the glass pedestal 2 and the silicon chip 3.

  As the heating means, for example, a heater embedded in the anode electrode stage 13 can be used. In this case, each bonding surface can be heated via the silicon tube 1. In addition, a heater embedded in the anode electrode 14 or the cathode electrode 15 can be used as the heating means.

  In a state where the silicon tube 1, the glass pedestal 2 and the silicon chip 3 are arranged on the anode electrode stage 13, the anode electrode stage 13 and the anode electrode 14, and between the anode electrode 14 and the cathode electrode 15. While applying a predetermined direct-current voltage and heating to a temperature required for bonding by a heating means, each bonding surface can be anodically bonded.

  The anodic bonding apparatus 10 includes the material conditions of the silicon tube 1 and the glass pedestal 2, the applied voltage and application time of the primary power supply 11 designed based on the bonding conditions, and the material conditions of the glass pedestal 2 and the silicon chip 3. In addition, storage means for storing the applied voltage and application time of the secondary power supply 12 designed based on the joining conditions and the like may be provided. Thereby, even if the materials and bonding conditions of the silicon tube 1, the glass pedestal 2, and the silicon chip 3 are changed, the bonding surfaces can be bonded under optimum conditions.

  Here, the anodic bonding method according to the present embodiment will be described with reference to FIGS. 2 and 3 are manufacturing process diagrams for explaining the anodic bonding method according to the present embodiment. As shown in FIG. 2A, the silicon tube 1 is first transported by being sucked or held by the transport means 16 and placed on the anode electrode stage 13 (FIG. 2B).

  After the silicon tube 1 is disposed on the anode electrode stage 13, the pair of side surfaces facing the silicon tube 1 are held by the holding means 17, and the silicon tube 1 is fixed (FIG. 2 (c)). Then, as shown in FIG. 2 (d), the glass pedestal 2 is conveyed by the conveying means 16, aligned, and placed on the silicon tube 1 (FIG. 2 (e)). For example, the center point of the silicon tube 1 can be grasped using an image processing means or the like, and the silicon tube 1 and the glass pedestal 2 can be aligned.

  Thereafter, the glass pedestal 2 is fixed on the silicon tube 1 by evacuating the through-hole 1a by a suction means (not shown) provided on the anode electrode stage 13 (FIG. 2 (f)). After fixing the glass pedestal 2, the silicon chip 3 is conveyed by the conveying means 16 as shown in FIG. 2 (g), aligned, and placed on the glass pedestal 2 (FIG. 2 (h)).

  Thereafter, the silicon chip 3 is fixed on the glass pedestal 2 by evacuating the through holes 1a and 2a by suction means (not shown) provided on the anode electrode stage 13 (FIG. 3 (i)). After fixing the silicon chip 3, the dummy substrate 4 is transferred by the transfer means as shown in FIG. 3 (j) (FIG. 3 (k)) and placed on the silicon chip 3 (FIG. 3 (l)). The dummy substrate 4 may not be arranged.

  Thereafter, the anode electrode 14 is brought into contact with the substantially central portion of the dummy substrate 4 (FIG. 3 (m)). The anode electrode 14 contacts the surface opposite to the bonding surface of the silicon chip 3 so as to apply a predetermined load so that the silicon tube 1, the glass pedestal 2, the silicon chip 3, and the dummy substrate 4 are not displaced. Thereby, each of the silicon tube 1, the glass pedestal 2, and the silicon chip 3 can be tightly fixed.

  Then, with a predetermined load applied by the anode electrode 14, the cathode electrode 15 is brought into contact with a side surface other than the bonding surface of the glass pedestal 2 as shown in FIG. The load applied from the anode electrode 14 may be a load that does not cause the silicon tube 1 or the like to be displaced due to the contact of the cathode electrode 15.

  Also, a predetermined load may be applied from the cathode electrode 15 to at least a pair of opposing side surfaces of the glass pedestal 2 to prevent displacement. In the present embodiment, four cathode electrodes 15 are provided, and the cathode electrodes 15 are in contact with each of the four side surfaces of the glass pedestal 2. The loads applied from the four cathode electrodes 15 to the glass pedestal 2 are substantially equal.

  Thereafter, anodic bonding of each bonding surface is performed with a predetermined load applied by the anode electrode 14 and the cathode electrode 15 (FIG. 3 (o)). In performing anodic bonding, (1) a method of simultaneously anodic bonding the bonding surface between the silicon tube 1 and the glass pedestal 2 and the bonding surface between the glass pedestal 2 and the silicon chip 3, and (2) one of these bonding surfaces. There is a method of anodic bonding one by one. Hereinafter, these two methods will be described.

(1) When two bonded surfaces are anodically bonded at the same time, each bonded surface is heated by a heating means (not shown), the glass pedestal 2 is set to a common ground potential GND, and a predetermined voltage is applied from the primary power supply 11 and the secondary power supply 12. Apply simultaneously for a predetermined time. The voltage applied from the primary power supply 11 to the anode electrode stage 13 and the cathode electrode 15 is equal to the voltage applied from the secondary power supply 12 to the anode electrode 14 and the cathode electrode 15.

  Conventionally, after disposing the silicon tube 1 and the glass pedestal 2 so as to overlap each other, a disposable glass dummy substrate is further disposed on the glass pedestal 2 so that the alkali metal compound does not precipitate on the glass pedestal 2. Anodic bonding was performed by setting electrodes on 1 and a glass dummy substrate.

  Thereafter, the dummy glass substrate is removed, the silicon chip 3 is transferred onto the bonded silicon tube 1 and the glass pedestal 2, and electrodes are set on the glass pedestal 2 and the silicon chip 3, respectively, and the voltage application direction is changed. It was changed and anodic bonding was performed. For this reason, the manufacturing time is prolonged, and the quality of the pressure sensor is adversely affected by scratches and dirt generated by handling.

  According to the present embodiment, the silicon tube 1, the glass pedestal 2, and the silicon chip 3 can be anodic-bonded collectively only by arranging them once. Further, since the cathode electrode 15 is in contact with the side surface of the glass pedestal 2, it is possible to prevent the alkali metal compound from being deposited on the bonding surface of the glass pedestal 2. For this reason, the damage by handling can be prevented and it becomes possible to prevent the quality of the manufactured pressure sensor from deteriorating.

  Since voltages of the same value are simultaneously applied from the primary power supply 11 and the secondary power supply 12, no current flows in the opposite direction between the silicon tube 1 and the glass pedestal 2 or between the glass pedestal 2 and the silicon chip 3. For this reason, two joint surfaces can be joined simultaneously, and manufacturing time can be shortened.

  Further, according to the present embodiment, it is possible to perform good bonding without arranging the glass dummy substrate that has been used when connecting the silicon tube 1 and the glass pedestal 2 in the related art. Thereby, disposable parts can be reduced. Furthermore, since each joining surface can be joined without interposing another layer on each joining surface, detection errors caused by inclusions in the pressure sensor can be prevented.

(2) When two bonded surfaces are anodically bonded one by one, each bonded surface is heated by a heating means (not shown), the glass pedestal 2 is set to a common ground potential GND, and a predetermined voltage is applied from the primary power supply 11; A predetermined voltage from the secondary power source 12 is applied separately. For example, first, a predetermined voltage is applied from the primary power source 11 between the anode electrode stage 13 and the cathode electrode 15 for a predetermined time to perform anodic bonding between the silicon tube 1 and the glass pedestal 2, and then the anode electrode 14 to the cathode electrode 15. By applying a predetermined voltage between them for a predetermined time, the anodic bonding between the glass pedestal 2 and the silicon chip 3 can be performed.

  As described above, according to the present embodiment, as in the case of performing the anodic bonding at the same time as described above, the silicon tube 1, the glass pedestal 2, and the silicon chip 3 are arranged once, and these are collectively anodic bonded. It can be carried out. For this reason, the damage by handling can be prevented and it becomes possible to prevent the quality of the manufactured pressure sensor from deteriorating.

  Moreover, it is possible to perform good bonding without arranging a glass dummy substrate that has been used when connecting the silicon tube 1 and the glass pedestal 2 in the past, and it is possible to reduce the number of components. Furthermore, since each joining surface can be joined without interposing another layer on each joining surface, detection errors caused by inclusions in the pressure sensor can be prevented.

  In the present embodiment, the voltage applied between the silicon tube 1 and the glass pedestal 2 and the voltage applied between the glass pedestal 2 and the silicon chip 3 can be optimized. Thereby, damage to each component can be reduced.

  Note that the present invention is not limited to the above-described embodiment, and can be changed as appropriate without departing from the spirit of the present invention. For example, when two joining surfaces are joined at a time difference, the invention is not limited to the above example. After the anodic bonding between the glass pedestal 2 and the silicon chip 3, the anodic bonding between the silicon tube 1 and the glass pedestal 2 may be performed.

DESCRIPTION OF SYMBOLS 1 Silicon tube 2 Glass base 3 Silicon chip 4 Dummy board 10 Anode joining apparatus 11 Primary power supply 12 Secondary power supply 13 Anode electrode stage 14 Anode electrode 15 Cathode electrode 16 Conveying means 17 Holding means

Claims (8)

An anodic bonding apparatus that disposes a glass substrate between a first substrate and a second substrate and anodic bonds each bonding surface,
An anode electrode stage for stacking the first substrate, the glass substrate, and the second substrate and placing the first substrate in contact with the anode substrate;
An anode electrode in contact with the second substrate;
A cathode electrode in contact with the glass substrate;
A first DC power source for applying a predetermined voltage between the anode electrode stage and the cathode electrode;
A second DC power source for applying a predetermined voltage between the anode electrode and the cathode electrode;
Heating means for heating the bonding surface of the first substrate and the glass substrate and the bonding surface of the glass substrate and the second substrate;
An anodic bonding apparatus comprising:   2. The anode according to claim 1, wherein each of the bonding surfaces is anodically bonded in a state where the anode electrode is in contact with a surface facing the bonding surface of the second substrate so as to apply a predetermined load. Joining device.   The anodic bonding apparatus according to claim 1, wherein the cathode electrode is in contact with at least a pair of opposing side surfaces of the glass substrate so as to apply a predetermined load.   4. The anodic bonding apparatus according to claim 1, further comprising storage means for storing an application voltage and an application time of the first DC power supply and an application voltage and an application time of the second DC power supply. An anodic bonding method in which a glass substrate is disposed between a first substrate and a second substrate, and each bonding surface is anodic bonded.
Placing the first substrate, the glass substrate, and the second substrate on the anode electrode stage so that the first substrate is in contact with the first substrate;
Abutting an anode electrode on the second substrate;
Contacting a cathode electrode to the glass substrate;
Applying a predetermined voltage simultaneously between the anode electrode stage and the cathode electrode and between the anode electrode and the cathode electrode for a predetermined time to anodic bond each bonding surface;
An anodic bonding method comprising: An anodic bonding method in which a glass substrate is disposed between a first substrate and a second substrate, and each bonding surface is anodic bonded.
Placing the first substrate, the glass substrate, and the second substrate on the anode electrode stage so that the first substrate is in contact with the first substrate;
Abutting an anode electrode on the second substrate;
Contacting the cathode electrode with the glass substrate;
Applying a predetermined voltage between the anode electrode stage and the cathode electrode for a predetermined time to anodic bond the first substrate and the glass substrate;
Applying a predetermined voltage between the anode electrode and the cathode electrode for a predetermined time to anodic bond the second substrate and the glass substrate;
An anodic bonding method comprising:   7. The anodic bonding of each of the bonding surfaces in a state where the anodic electrode is in contact with a surface facing the bonding surface of the second substrate so as to apply a predetermined load. 8. Anodic bonding method.   The anodic bonding method according to claim 5, 6 or 7, wherein the cathode electrode is in contact with at least a pair of opposing side surfaces of the glass substrate so as to apply a predetermined load.

Images