JP2011026684A - Vapor deposition apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a vapor deposition apparatus where the frequency of the maintenance in a film deposition detector is reduced, and further, the generation of fault by heat from a cylindrical heating element at the film deposition detector can be suppressed. <P>SOLUTION: The vapor deposition apparatus is provided with: a vapor deposition source 1; a cylindrical heating element 2; a film deposition rate detector 3; and a shielding body 4. The cylindrical heating element 2 is arranged so as to surround a space between the vapor deposition source 1 and the base material 5 to be vapor-deposited. The shielding body 4 is provided so as to continuously move in such a manner that it passes through a position facing the opening of the base material 5 to be vapor-deposited in the cylindrical heating element 2. The film deposition rate detector 3 is arranged at a position on the side opposite to the side of the cylindrical heating element 2 to the shielding body 4. In the shielding body 4, a plurality of holes 6 passing from the side of the cylindrical heating element 2 to the side of the film deposition rate detector 3 are formed. <P>COPYRIGHT: (C)2011,JPO&amp;INPIT

Description

  The present invention relates to a vapor deposition apparatus that vaporizes a vapor deposition material from a vapor deposition source and deposits the vaporized substance on a substrate to be vapor deposited.

  For example, the vapor deposition apparatus arranges a vapor deposition source for holding the vapor deposition material in the vacuum chamber and a substrate to be vapor-deposited, and vaporizes the vapor deposition material by heating the vapor deposition material in a state where the pressure in the vacuum chamber is reduced. Is deposited on the surface of the substrate to be vapor-deposited. Then, the vaporized substance is released from the vapor deposition source, and is deposited on the surface of the vapor deposition substrate disposed opposite to the vapor deposition source. In addition, since the vaporized material is released from the deposition source in various directions, there are many vaporized materials that do not proceed toward the substrate to be deposited. The space where the vapor deposition material of the vapor deposition source disposed in the vacuum chamber and the substrate to be vapor-deposited is surrounded by a cylindrical heating body, and the cylindrical heating body is at a temperature at which the vapor deposition material is vaporized. The vaporized material heated and vaporized from the vapor deposition source is vapor deposited on the surface of the vapor deposition substrate through the space inside the cylindrical heating body.

  In such a vapor deposition apparatus, a film formation rate detector may be provided in order to form a vapor deposition film having a constant film thickness on a substrate to be vapor-deposited. For example, in Patent Document 1, a film formation speed detector is provided inside a cylindrical heating body. By detecting the deposition rate with such a deposition rate detector and controlling the deposition conditions based on the detected deposition rate detector, it is possible to form a deposition film having a constant film thickness on the deposition target substrate.

  Deposition rate detectors include optical detectors that observe absorption, emission, and molecular vibrations using optical techniques, molecular mass detectors that are introduced into the device, and mass spectrometric detectors that are identified from fragments generated, Examples thereof include a crystal oscillator type detector that measures a film thickness from a film formation mass of a formed material.

  However, if a vaporized substance adheres to such a film formation rate detector and the amount of adhesion increases, the measurement accuracy decreases or measurement becomes impossible. For this reason, it is necessary to frequently replace the film formation rate detector or to remove the deposited film, and the maintenance becomes complicated. This becomes a fatal problem particularly during high-speed film formation or long-time film formation.

  In order to cope with such a problem, a method of extending the life of the detector by controlling the amount of vaporized substance reaching the detector by providing a shield for the detector can be considered. There is a problem that adhering vaporized substances may cause dust to be generated in the apparatus or may become a significant source of contamination.

  Furthermore, when the film formation speed detector is disposed inside the cylindrical heating body as in Patent Document 1, the film formation speed detector is heated by the radiant heat from the cylindrical heating body. Problems may occur. In particular, in the case of a quartz vibrator type detector that generally requires cooling water, it is very difficult to dispose the detector inside the cylindrical heating body.

JP 2005-307285 A

  The present invention has been made in view of the above points, and reduces the frequency of maintenance of the deposition rate detector and suppresses the occurrence of problems due to heat from the cylindrical heating body in the deposition detector. An object of the present invention is to provide a vapor deposition apparatus that can perform the above process.

  The vapor deposition apparatus according to the present invention includes a vapor deposition source 1, a cylindrical heating body 2, a film formation rate detector 3, and a shield 4. The cylindrical heating body 2 is disposed so as to surround a space between the vapor deposition source 1 and the vapor deposition substrate 5. The shield 4 is provided so as to continuously move so as to pass through a position facing the opening of the cylindrical heating body 2 on the vapor deposition substrate 5 side. The film formation speed detector 3 is disposed at a position opposite to the cylindrical heating body 2 with respect to the shield 4. The shield 4 is formed with a plurality of holes 6 penetrating from the cylindrical heating body 2 side to the film formation rate detector 3 side.

  For this reason, the vaporized substance 19 generated by heating the vapor deposition material 20 with the vapor deposition source 1 can reach the vapor deposition substrate 5 through the inside of the cylindrical heating body 2 to form a vapor deposition film. At this time, the film formation speed detector 3 is shielded from the cylindrical heating body 2 by the shielding body 4 outside the cylindrical heating body 2, so that the film formation speed detector 3 is heated by the heat from the cylindrical heating body 2. 3 is suppressed from being heated. Further, when the vaporized substance 19 reaches the film formation speed detector 3 through the hole 6 of the shield 4, the film formation speed detector 3 can detect the film formation speed, and at this time, the film formation speed detector 3. By suppressing the amount of the vaporized substance 19 that reaches, the amount of the vaporized substance 19 adhering to the deposition rate detector 3 is also suppressed. Further, since the shield 4 continuously moves, the vaporized substance 19 attached to the shield 4 does not remain, and the vaporized substance 19 prevents dust from being generated in the apparatus or a contamination source. can do.

  In the present invention, while the deposition target substrate 5 is held, the deposition target substrate 5 is continuously transported so as to pass the position facing the opening on the deposition target substrate 5 side of the cylindrical heating body 2. It is preferable that the shielding body 4 is configured by a holding member 7 that includes the means 13 and holds the deposition target substrate 5 in the conveying means 13.

  In this case, it becomes possible to continuously form a vapor deposition film while conveying a plurality of vapor deposition substrates 5 and to move the shield 4 using a mechanism for conveying the vapor deposition substrates 5. To be able to.

  In the present invention, the position of the deposition target substrate 5 and the pattern mask 8 facing the opening on the deposition target substrate 5 side of the cylindrical heating body 2 is held while holding the deposition target substrate 5 and the pattern mask 8. The pattern mask 8 is provided with a shielding part 9 having a plurality of holes 6, and the shielding part 9 constitutes at least a part of the shielding body 4. It is also preferable.

  In this case, it becomes possible to continuously form a vapor deposition film while conveying a plurality of vapor deposition substrates 5 and to move the shield 4 using a mechanism for conveying the vapor deposition substrates 5. It becomes easy to clean the shielding part 9 of the pattern mask 8 to which the vaporized substance 19 adheres, and the vaporized substance 19 generates dust or becomes a contamination source in the apparatus. Further, it can be surely and easily prevented.

  Further, in the present invention, while holding the substrate 5 to be deposited, the substrate 5 to be deposited is continuously conveyed so as to pass a position facing the opening on the side of the substrate to be deposited 5 of the cylindrical heating body 2. A shielding member 10 having a plurality of holes 6 is provided so as to be detachable from a member for holding the deposition target substrate 5 in the conveying means 13. It is also preferred that at least a part of it is configured.

  In this case, it becomes possible to continuously form a vapor deposition film while conveying a plurality of vapor deposition substrates 5 and to move the shield 4 using a mechanism for conveying the vapor deposition substrates 5. It becomes easy to clean the shielding member 10 to which the vaporized substance 19 adheres, or it is possible to make the shielding member 10 disposable once, and the vaporized substance 19 causes dust in the apparatus. Occurrence and contamination can be prevented more reliably and easily.

  In the present invention, it is preferable that the film formation rate detector 3 is a crystal resonator type detector 3a.

  In this case, it is possible to reduce the rate of increase of the film formation amount in the quartz resonator type detector 3a at the time of film formation speed detection, and to detect the film formation speed continuously and accurately over a long period of time. Become.

  In the present invention, it is also preferable that the deposition rate detector 3 is an optical concentration detector 3b that optically detects the concentration of the vaporized substance 19 emitted from the vapor deposition source 1.

  In this case, the deposition amount of the vaporized substance 19 in the optical system of the optical concentration detector 3b can be reduced at the time of film formation speed detection, and the film formation speed can be detected continuously and accurately over a long period of time. become.

  According to the present invention, when forming a vapor deposition film on a substrate to be vapor-deposited, the film formation speed detector can detect the film formation speed, and the film formation speed detector is heated by the heat from the cylindrical heating body. Occurrence of defects or the like can be suppressed, and the amount of vaporized substance attached to the film formation rate detector can be reduced to reduce the frequency of maintenance such as replacement or cleaning of the film formation rate detector.

It is a schematic sectional drawing which shows Embodiment 1 of this invention. It is a top view same as the above. It is a one part perspective view same as the above. It is a partial perspective view which shows the other form same as the above. It is a top view which shows Embodiment 2 of this invention. It is a partial exploded perspective view same as the above. It is a top view which shows Embodiment 3 of this invention. It is a partial exploded perspective view same as the above. It is the schematic which shows the whole structure of a vapor deposition apparatus.

  A mode for carrying out the present invention will be described.

  FIG. 9 shows an example of a schematic configuration of the vapor deposition apparatus. This vapor deposition apparatus is a continuous vapor deposition apparatus for sequentially depositing a plurality of vapor deposition films on the substrate 5 to be vapor-deposited.

  In this example, a load lock chamber 11 in which the substrate 5 to be deposited is stocked is provided at one end of the apparatus, and a plurality of film forming chambers 12 constituted by vacuum chambers are connected in series to the load lock chamber 11. . A pressure reducing means such as a vacuum pump is connected to the load lock chamber 11 and the film forming chamber 12, and the inside of the load lock chamber 11 and the film forming chamber 12 can be depressurized by the pressure reducing means.

  This vapor deposition apparatus is provided with a conveying means 13 for conveying the vapor deposition substrate 5 continuously. In the load lock chamber 11, the deposition substrate 5 is sequentially supplied to the transport unit 13 by an appropriate robot mechanism or the like, and the transport unit 13 passes through the deposition substrate 5 sequentially through the plurality of deposition chambers 12. Transport. Thereby, vapor deposition with respect to the vapor deposition base material 5 is sequentially performed in each film-forming chamber 12, and a plurality of vapor deposition films are laminated on the vapor deposition base material 5.

[Embodiment 1]
In the present embodiment shown in FIGS. 1 to 3, the vapor deposition source 1 is disposed in the vacuum chamber constituting each film forming chamber 12, and the object to be transported by the transport means 13 above the vapor deposition source 1. The vapor deposition base material 5 passes. The vapor deposition source 1 includes a container 14 such as a crucible filled with the vapor deposition material 20 and a heater that heats the vapor deposition material 20 in the container 14. The vapor deposition source 1 can be formed of, for example, SUS304 material. An appropriate material is used as the vapor deposition material 20 as necessary. For example, aromatic tertiary amine compounds such as Alq3, α-NPD, spiro TAD, and 2-TNATA, ferric bromide, ferric iodide, and the like. Ordinary deposition processes such as inorganic compounds such as aluminum chloride, aluminum bromide, vanadium oxide, organometallic complexes such as tris (8-quinolinolato) aluminum complex, luminescent fluorescent dyes such as coumarin derivatives, and aluminum and magnesium All materials that can be formed in the above are applicable.

  In addition, a cylindrical heating body 2 is provided in the film forming chamber 12 so as to surround the space between the vapor deposition source 1 and the vapor deposition substrate 5. This cylindrical heating body 2 is formed in a cylindrical shape with SUS304 material or the like, and its upper surface and lower surface are open. As the shape of the cylindrical heating body 2, in addition to such a cylindrical shape, it can be formed in an arbitrary shape such as a rectangular tube shape or a truncated cone shape. The cylindrical heating body 2 is provided with a heater such as a sheathed heater or a lamp heater, and the cylindrical heating body 2 is heated by the heater.

  The conveying means 13 continuously moves the deposition target substrate 5 so as to pass through a position facing the upper opening 14 above the upper opening 14 on the opposite side of the cylindrical heating body 2 from the vapor deposition source 1 side. Transport as you do. Examples of the substrate 5 to be deposited include those made of an appropriate material such as a glass substrate. In the position facing the upper opening 14, the deposition target substrate 5 is disposed so that the surface of the deposition target substrate 5 on which deposition is performed and the upper opening 14 face each other. In the present embodiment, the transport unit 13 includes a pair of holding members 7 that hold the base material, and a driving unit (not shown) that moves the holding member 7 together with the deposition base material 5.

  The holding member 7 is two rod-shaped members arranged in parallel in a horizontal direction orthogonal to the transport direction of the deposition target substrate 5. Each holding member 7 is formed with holding ribs 15 projecting inward on surfaces facing each other. The deposition target substrate 5 is held by the holding member 7 by placing the edges of both sides of the deposition target substrate 5 in the direction orthogonal to the transport direction on the holding ribs 15 of the holding members 7. At this time, if necessary, the pattern mask 8 having the opening 16 having the same shape as the pattern shape of the vapor deposition film formed on the deposition target substrate 5 on the surface on which the deposition target substrate 5 is deposited. The substrate 5 to be vapor-deposited may be held by the holding member 7 in a state where the two are stacked. In addition, as a method of holding the deposition target substrate 5 by the holding member 7, an appropriate method such as holding the deposition target substrate 5 using a clamp can be employed in addition to the method using the holding rib 15. The driving means is not particularly limited, and any means may be used as long as the holding member 7 is moved by an appropriate method such as roller conveyor conveyance, belt conveyor conveyance, take-up conveyance, conveyance using a ball spiral, or the like. By moving the holding member 7 so as to pass through the vacuum chamber by the driving means, the deposition target substrate 5 is transported.

  One of the two holding members 7 is configured as a shield 4. For this reason, the shield 4 continuously moves so as to pass the position facing the upper opening 14 of the cylindrical heating body 2. The shield 4 is formed with a plurality of holes 6 penetrating vertically. The holes 6 are formed so as to be regularly and uniformly dispersed in the shield 4.

  In addition, a film formation speed detector 3 is disposed at an upper position opposite to the cylindrical heating body 2 with respect to the shield 4. For this reason, the film formation speed detector 3 is shielded from the upper opening 14 of the cylindrical heating body 2 by the shield 4 and the hole 6 in the shield 4 detects the film formation speed from the cylindrical heating body 2 side. It penetrates to the vessel 3 side.

  The film forming speed detector 3 is not particularly limited as long as the film forming speed can be detected based on the vaporized substance 19 around the film forming speed detector 3, but in this embodiment, the material formed on the surface of the film forming speed detector 3 is not limited. A quartz resonator type detector 3a that measures the film thickness from the film formation mass is used. In this case, the film formation speed is derived based on the change in the film thickness in the film formation speed detector 3.

  Further, as the film formation rate detector 3, an optical concentration detector 3b that optically detects the concentration of the vaporized substance 19 emitted from the vapor deposition source 1 can be used. The optical density detector 3 b shown in FIG. 4 includes a projector 17 and a light receiver 18. The light projector 17 and the light receiver 18 are installed above the shield 4 at intervals along the longitudinal direction (moving direction) of the shield 4, and the light emitted from the light projector 17 is received by the light receiver 18. The intensity is detected, and the absorbance in the space between the projector 17 and the light receiver 18 is detected based on the detected intensity. Based on this absorbance, the concentration of the vaporized substance 19 can be detected, and based on this, the film formation rate can be measured.

  As the film formation rate detector 3, an appropriate detector other than the above can be used. For example, a mass spectrometric detector identified from the molecular weight of the molecule introduced into the apparatus and the generated fragment can also be used. .

  In the vapor deposition apparatus configured as described above, when the vapor deposition film is formed by stacking on the vapor deposition base material 5, the inside of the load lock chamber 11 and each film formation chamber 12 is depressurized and the cylindrical heating body 2 is heated. In this state, the vapor deposition material 20 is heated by the vapor deposition source 1. The vapor deposition material 20 is vaporized by melting, evaporation, or sublimation, and the vaporized material 19 generated thereby is discharged from the vapor deposition source 1 and scattered. A part of the vaporized substance 19 proceeds toward the upper opening 14 of the tubular heating body 2 through the inside of the tubular heating body 2. Further, the remaining vaporized material 19 proceeds in a direction away from the upper opening 14 of the cylindrical heating body 2, but this vaporized material 19 reaches the inner surface of the heated cylindrical heating body 2, and By re-vaporizing and reflecting on the inner surface, it proceeds toward the upper opening 14 of the cylindrical heating body 2.

  In this way, the transport means 13 is operated while generating the vaporized substance 19 in the film forming chamber 12. At this time, first, the holding member 7 is moved by operating the driving means without supplying the deposition target substrate 5 to the conveying means 13. Further, the film formation speed detector 3 detects the film formation speed. At this time, the vaporized substance 19 released from the upper opening 14 of the cylindrical heating body 2 to the outside of the cylindrical heating body 2 passes through the hole 6 of one holding member 7 (shielding body 4) to the film formation rate detector 3. To reach. For this reason, the amount of the vaporized substance 19 reaching the film formation rate detector 3 is reduced at a constant rate. Further, since the shield 4 continuously moves, the positional relationship between the film formation rate detector 3 and the hole 6 of the shield 4 changes, but the vaporized substance 19 that reaches the film formation rate detector 3 changes. The amount is averaged overall and becomes nearly uniform. In particular, when the holes 6 of the shield 4 are uniformly and regularly dispersed, the uniformity of the amount of the vaporized substance 19 that reaches the deposition rate detector 3 becomes high.

  The deposition rate is derived based on the vaporized substance 19 that has reached the deposition rate detector 3. That is, the film formation speed is derived in consideration of the reduction in the amount of the vaporized substance 19 that reaches the film formation speed detector 3 by the shield 4. At this time, the film forming speed is detected on the basis of the vaporized substance 19 that passes through the vicinity of the target substrate 5 on the substantially same plane as the target substrate 5, thereby increasing the detection accuracy of the film forming rate. .

  In each film forming chamber 12, when the film forming speed detected by the film forming speed detector 3 reaches a desired speed, the deposition base material 5 is supplied to the transport means 13 and transported in the load lock chamber 11. The substrate 5 to be deposited is sequentially passed through the film forming chambers 12. In each film forming chamber 12, the deposition target substrate 5 passes through a position facing the upper opening 14 of the cylindrical heating body 2, and a deposition film is formed with a desired film thickness on the deposition target substrate 5. Thereby, a vapor deposition film is sequentially formed on the deposition base material 5.

  During this time, in each film forming chamber 12, the film forming speed is continuously measured by the film forming speed detector 3 to monitor whether or not the film forming speed in each film forming chamber 12 is as desired. Thus, the occurrence of a defect can be detected.

  As described above, when the deposition rate is detected by the deposition rate detector 3 when the deposition film is formed on the deposition target substrate 5, the deposition rate detector 3 is arranged outside the cylindrical heating body 2. Since it is provided and shielded from the cylindrical heating body 2 by the shield 4, the amount of heat reaching the deposition rate detector 3 by radiation or the like from the cylindrical heating body 2 can be reduced, and film formation detection It is possible to prevent a malfunction caused by heat in the vessel.

  Further, when the vaporized substance 19 reaches the film formation rate detector 3 through the hole 6 in the shield 4, the amount of the vaporized substance 19 reaching the film formation rate detector 3 is suppressed, and in the film formation rate detector 3. The adhesion amount of the vaporized substance 19 can be reduced. For this reason, the increase in the deposition amount of the vaporized substance 19 can suppress a decrease in the film formation speed detection accuracy by the film formation speed detector 3. For example, in the case of the quartz oscillator type detector 3a, the detection accuracy decreases when the mass of the vapor deposition film formed by adhering the vaporized substance 19 decreases, but such a decrease in detection accuracy can be suppressed. . Further, in the case of the optical concentration detector 3b, the detection accuracy decreases when the vaporized substance 19 adheres to the optical system such as the light emitting portion of the projector 17 and the light receiving portion of the light receiver 18, but this decrease in detection accuracy is suppressed. can do. Thereby, the frequency of replacement | exchange of the film-forming speed | rate detector 3 and cleaning can be reduced.

  Further, since the shield 4 continuously moves, the vaporized substance 19 attached to the shield 4 does not remain in the film forming chamber 12, and the vaporized substance 19 generates dust in the apparatus or causes contamination. Can be prevented.

  Although the hole 6 may be formed in the whole area | region along the moving direction in the shielding body 4, this hole 6 is a side of the direction orthogonal to a conveyance direction with respect to the holding position of the to-be-deposited base material 5. FIG. It is possible to partially form only at the position of, and prevent the hole 6 from being formed between the deposition target substrates 5. In this case, when the deposition target substrate 5 is not disposed at a position facing the upper opening 14 of the cylindrical heating body 2, the film formation speed detector 3 is completely removed from the upper opening 14 of the cylindrical heating body 2 by the shield 4. Thus, the amount of heat reaching the deposition rate detector 3 can be further reduced, and the amount of the vaporized substance 19 reaching the deposition rate detector 3 can be further suppressed. At this time, the film formation speed is measured in a state where the film formation speed detector 3 and the cylindrical heating body 2 are shielded by the portion of the shield 4 where the holes 6 are formed. Measured based on the detection result at.

The size, density, and the like of the holes 6 in the shield 4 can detect the deposition rate while sufficiently suppressing the deposition of the vaporized substance 19 in the deposition rate detector 3, and the deposition rate detector 3 can be detected by the shield 4. It is appropriately set so that the amount of heat reaching can be sufficiently reduced. For example, the hole diameter of the hole 6 is Φ (mm), the hole density is Nd (pieces / cm ² ), and the minimum flow rate of the vaporized substance 19 required for accurately detecting the film formation rate by the film formation rate detector 3 is X (mass). Length- ² · time- ¹ ), the flux of the vaporized substance 19 toward the surface of the substrate 5 to be deposited is Y (mass · length- ² · time- ¹ ), and the shield 4 When the moving speed of s is s (cm / sec), it is preferable that these satisfy the following relationship.

s × Nd ^0.5 > 10 (1)
X ≧ (0.25πΦ ² Nd / 100) × Y (2)
Equation (1) is related to the detection time constant, and by satisfying this equation, the portion of the hole 6 in the shield 4 passes through the film formation rate detector 3 and the portion where the hole 6 is not vacant is formed. In the case of passing through the film speed detector 3, it is possible to suppress the detected film forming speed from oscillating and to improve the detection accuracy of the film forming speed. The expression (2) is an expression showing how much the vapor deposition flux that actually reaches the substrate 5 to be deposited is decreased to reach the film formation rate detector 3.

  The minimum flow velocity X is set according to the type of the film formation rate detector 3 and the type of the vaporized substance 19.

  For example, when the film formation rate detector 3 is a quartz oscillator type detector 3a, the film formation rate is expressed by the equation (flow rate of vaporized substance) × (density) × (tooling factor) = (film formation rate). Derived. The tooling factor is appropriately given so that the film forming speed is derived from the flow rate of the vaporized substance 19, and is derived, for example, from the detection result of the quartz oscillator type detector 3a when the deposition is performed for a certain deposition time. The product of the film forming speed and the vapor deposition time is determined so as to coincide with the thickness of the vapor deposited film actually formed. In the present embodiment, the thickness of the vapor deposition film formed on the vapor deposition substrate 5 without passing through the shield 4 from the flow rate of the vaporized substance 19 that actually reaches the quartz crystal detector 3a through the hole 6 of the shield 4. The tooling factor is determined so that is derived. Then, using the tooling factor determined when the flow rate of the vaporized substance 19 reaching the quartz resonator type detector 3a is X1, the film formation speed in the case of the flow rate X2 that is 1.5 times the flow rate X1 is If the film thickness derived from the product of the deposition rate and the deposition time is within ± 10% of the thickness of the deposited film actually formed on the substrate 5 to be deposited, the film is formed at the flow rate X1. It can be assumed that the speed is detected with high accuracy. The minimum flow rate among the flow rates X1 can be set as the minimum flow rate X.

  When the film formation rate detector 3 is an optical concentration detector 3b, the absorbance detected by the optical concentration detector 3b is preferably 0.1 to 1.0, particularly preferably 0.1. In the range of ˜0.5, the absorbance can be accurately converted into the film forming rate. Therefore, it is preferable to determine the pore diameter Φ, the pore density Nd, etc. so that the absorbance falls within this range.

For example, in this embodiment, when the thickness t of the shield 4 is 5 mm, the hole diameter Φ of the holes 6 is 2 mm, and the hole density Nd is 8 / cm ² , vapor deposition on the surface on which the vapor deposition substrate 5 is deposited. When the speed is 8 nm / second, the actual film formation speed in the film formation speed detector 3 is 0.24 nm / second. Therefore, when the actual film formation speed is 0.24 nm / second, the detection result can be derived so that the detection value of the film formation speed is 8 nm / second, and the film formation speed can be detected. In this case, the amount of the vaporized substance 19 that actually reaches the deposition rate detector 3 is reduced to 0.24 / 8 × 100 = 3 (%) by the shield 4, and the lifetime of the deposition rate detector 3 is Expected to be 33 times.

  The conveying means 13 is not limited to the above-described one, and the vapor deposition substrate 5 passes through a position facing the vapor deposition substrate 5 side opening of the cylindrical heating body 2 while holding the vapor deposition substrate 5. As long as the shielding member 4 having a plurality of holes 6 is formed by the holding member 7 that holds the deposition target substrate 5 in the conveying unit 13, the conveying unit 13 that continuously conveys the substrate 6 may have any configuration. May be.

[Embodiment 2]
In the present embodiment shown in FIGS. 5 and 6, the vapor deposition source 1 is disposed in the vacuum chamber constituting each film forming chamber 12, as in the first embodiment, and the conveying means is disposed above the vapor deposition source 1. The vapor deposition base material 5 conveyed by 13 passes, and the cylindrical heating body 2 surrounding the space between the vapor deposition source 1 and the vapor deposition base material 5 is provided.

  The conveying means 13 continuously moves the deposition target substrate 5 so as to pass through a position facing the upper opening 14 above the upper opening 14 on the opposite side of the cylindrical heating body 2 from the vapor deposition source 1 side. Transport as you do. In the position facing the upper opening 14, the deposition target substrate 5 is disposed so that the surface of the deposition target substrate 5 on which deposition is performed and the upper opening 14 face each other. In the present embodiment, the transport unit 13 includes a base material holder 21 that holds the deposition target substrate 5, a pair of holding members 7 that hold the base material holder 21, and the holding member 7 as the base material holder 21. And a driving means (not shown) for moving the whole.

  As the holding member 7 and the driving means, those having the same configuration as in the first embodiment are adopted, but in this embodiment, the holding member 7 does not directly hold the substrate 5 to be deposited but holds the substrate holding body 21. The holding member 7 has no hole 6 formed therein.

  The base material holder 21 is formed in a flat plate shape, and a holding opening 22 having a rectangular shape in plan view penetrating vertically is formed. A holding rib 23 protruding toward the inside of the holding opening 22 is formed at the lower end portion of the inner peripheral surface of the holding opening 22.

  The substrate holder 21 holds the pattern mask 8 together with the deposition target substrate 5. The pattern mask 8 is a rectangular mask portion 24 having a shape matching the substrate 5 to be deposited, and a shielding portion 9 extending from one end edge of the mask portion 24 and extending in a direction perpendicular to the extending direction. It consists of and. An opening 16 having the same shape as the pattern shape of the vapor deposition film formed on the vapor deposition substrate 5 is formed in the mask portion 24. On the other hand, the shielding part 9 is formed with a plurality of holes 6 penetrating vertically. The holes 6 are formed so as to be regularly and uniformly dispersed in the shielding portion 9. Further, the pattern mask 8 is formed in a rectangular shape in plan view that matches the holding opening 22 of the base material holder 21.

  The pattern mask 8 is arranged in the holding opening 22 of the base material holder 21 so that the shielding portion 9 is arranged on one side in a direction orthogonal to the transport direction, and the outer peripheral edge of the pattern mask 8 Is disposed on the holding rib 23, so that it is held by the base material holder 21. Furthermore, the deposition base material 5 is held on the base material holder 21 by disposing the deposition base material 5 on the mask portion 24 in the pattern mask 8.

  The base material holder 21 is placed on the holding ribs 15 of the holding members 7 at both edges in the direction perpendicular to the transport direction of the base material holder 21, so that the base material holder 21 is provided with the pattern mask 8 and the deposition base. The material 5 is held by the holding member 7. The shielding part 9 is arranged at a position on the side in the direction orthogonal to the transport direction with respect to the holding position of the deposition target substrate 5.

  In addition, a film formation speed detector 3 is disposed at an upper position on the opposite side of the shielding portion 9 from the cylindrical heating body 2 side. For this reason, the film formation rate detector 3 is shielded from the upper opening 14 of the cylindrical heating body 2 by the shielding part 9, and the hole 6 in the shielding part 9 detects the film formation speed from the cylindrical heating body 2 side. It penetrates to the vessel 3 side.

  As the film formation rate detector 3, as in the case of the first embodiment, for example, there is a crystal oscillator type detector 3a that measures the film formation film thickness from the film formation mass of the material formed on the surface thereof. In this case, the film formation speed is derived based on the change in the film thickness in the film formation speed detector 3. Further, as the film formation rate detector 3, an optical concentration detector 3b that optically detects the concentration of the vaporized substance 19 emitted from the vapor deposition source 1 can be used. In addition to this, an appropriate detector can be used. For example, a mass spectrometric detector identified from the molecular weight of a molecule introduced into the apparatus and a generated fragment can be used.

  In the vapor deposition apparatus configured as described above, when the vapor deposition film is formed by stacking on the vapor deposition base material 5, first, the load lock chamber 11 and the respective film formation chambers 12 are decompressed as in the first embodiment, and the cylinder In this state, the vapor deposition material 20 is heated by the vapor deposition source 1.

  In this way, the transport means 13 is operated while generating the vaporized substance 19 in the film forming chamber 12. At this time, only the pattern mask 8 is held without holding the deposition target substrate 5 on the base material holder 21, the base material holder 21 is held on the holding member 7, and the holding member 7 is moved. A plurality of substrate holders 21 are sequentially arranged on the holding member 7 at intervals, and a gap member 25 having the same width as the substrate holder 21 is arranged between the substrate holders 21. The gap between the base material holders 21 is filled with the gap member 25. At this time, the shielding body 4 is configured at one side including the shielding section 9 in the base material holder 21 and the gap member 25. The base material holders 21 may be arranged without a gap without using the gap member 25. In this case, the shield body 4 is configured on one side of the base material holder 21 including the shield part 9. Is done.

  Further, the film formation speed detector 3 detects the film formation speed. At this time, the vaporized substance 19 released from the upper opening 14 of the cylindrical heating body 2 to the outside of the cylindrical heating body 2 reaches the film formation rate detector 3 through the hole 6 of the shielding portion 9 in the shielding body 4. For this reason, the amount of the vaporized substance 19 reaching the film formation rate detector 3 is reduced at a constant rate. Further, since the shield 4 is continuously moving, the positional relationship between the film formation rate detector 3 and the hole 6 of the shield 9 changes, but the vaporized substance 19 that reaches the film formation rate detector 3 is changed. The amount is averaged overall and becomes nearly uniform. In particular, when the holes 6 of the shielding part 9 are uniformly and regularly dispersed, the uniformity of the amount of the vaporized substance 19 that reaches the film formation rate detector 3 becomes high.

  The deposition rate is derived based on the vaporized substance 19 that has reached the deposition rate detector 3. That is, the film formation speed is derived in consideration of the reduction in the amount of the vaporized substance 19 that reaches the film formation speed detector 3 by the shield 4. At this time, the film forming speed is detected on the basis of the vaporized substance 19 that passes through the vicinity of the target substrate 5 on the substantially same plane as the target substrate 5, thereby increasing the detection accuracy of the film forming rate. .

  Here, in the present embodiment, in the state where the deposition target substrate 5 is not disposed at a position facing the upper opening 14 of the cylindrical heating body 2, the film formation rate detector 3 is formed of the cylindrical heating body 2 by the shielding body 4. The amount of heat that is completely shielded from the upper opening 14 and reaches the deposition rate detector 3 can be further reduced, and the amount of the vaporized substance 19 that reaches the deposition rate detector 3 can be further suppressed. become. At this time, the film formation rate is a state in which the space between the film formation rate detector 3 and the cylindrical heating body 2 is shielded by the portion (shield portion 9) where the hole 6 is formed in the shield 4. Measured based on the detection result of the film velocity detector 3.

  In each film formation chamber 12, when the film formation speed detected by the film formation speed detector 3 reaches a desired speed, the substrate 5 to be deposited is transferred to the substrate holder 21 of the transport means 13 in the load lock chamber 11. The substrate 5 is supplied, held, transported, and the deposition target substrate 5 is sequentially passed through the film forming chambers 12. In each film forming chamber 12, the substrate 5 to be deposited passes through a position facing the upper opening 14 of the cylindrical heating body 2, and the shape of the deposited film matches the opening 16 in the pattern mask 8 with respect to the substrate 5 to be deposited. With a desired film thickness. Thereby, a vapor deposition film is sequentially formed on the deposition base material 5.

  During this time, in each film forming chamber 12, the film forming speed is continuously measured by the film forming speed detector 3 to monitor whether or not the film forming speed in each film forming chamber 12 is as desired. Thus, the occurrence of a film formation defect can be detected.

  As described above, when the deposition rate is detected by the deposition rate detector 3 when the deposition film is formed on the deposition target substrate 5, the deposition rate detector 3 is arranged outside the cylindrical heating body 2. Since it is provided and shielded from the cylindrical heating body 2 by the shield 4, the amount of heat reaching the deposition rate detector 3 by radiation or the like from the cylindrical heating body 2 can be reduced, and film formation detection It is possible to prevent a malfunction caused by heat in the vessel.

  Further, when the vaporized substance 19 reaches the film formation rate detector 3 through the hole 6 in the shield 4, the amount of the vaporized substance 19 reaching the film formation rate detector 3 is suppressed, and in the film formation rate detector 3. The adhesion amount of the vaporized substance 19 can be reduced. For this reason, the frequency of replacement and cleaning of the film formation rate detector 3 can be reduced.

  Further, since the shield 4 continuously moves, the vaporized substance 19 attached to the shield 4 does not remain in the film forming chamber 12, and the vaporized substance 19 generates dust in the apparatus or causes contamination. Can be prevented.

  As in the case of the first embodiment, the size, density, etc. of the holes 6 in the shielding part 9 of the shielding body 4 can detect the deposition rate while sufficiently suppressing the deposition of the vaporized substance 19 in the deposition rate detector 3. In addition, the amount of heat reaching the deposition rate detector 3 by the shield 4 can be appropriately set.

  The conveying means 13 is not limited to the above-described one, and the deposition substrate 5 and the pattern mask 8 are held on the deposition substrate 5 side of the cylindrical heating body 2 while holding the deposition substrate 5 and the pattern mask 8. The shielding unit 9 is configured to continuously convey the pattern mask 8 so as to pass through the position facing the opening of the pattern mask 8. The shielding unit 9 includes a plurality of holes 6, and the shielding unit 9 forms at least one of the shielding units 4. Any configuration may be used as long as the section is configured.

[Embodiment 3]
In the present embodiment shown in FIGS. 7 and 8, the vapor deposition source 1 is disposed in the vacuum chamber constituting each film forming chamber 12 in the same manner as in the first embodiment, and the conveying means is disposed above the vapor deposition source 1. The vapor deposition base material 5 conveyed by 13 passes, and the cylindrical heating body 2 surrounding the space between the vapor deposition source 1 and the vapor deposition base material 5 is provided.

  The conveying means 13 continuously moves the deposition target substrate 5 so as to pass through a position facing the upper opening 14 above the upper opening 14 on the opposite side of the cylindrical heating body 2 from the vapor deposition source 1 side. Transport as you do. In the position facing the upper opening 14, the deposition target substrate 5 is disposed so that the surface of the deposition target substrate 5 on which deposition is performed and the upper opening 14 face each other. In the present embodiment, the transport unit 13 includes a base material holder 21 that holds the deposition target substrate 5, a pair of holding members 7 that hold the base material holder 21, and the holding member 7 as the base material holder 21. And a driving means (not shown) for moving the whole.

  As the holding member 7 and the driving means, those having the same configuration as in the first embodiment are adopted, but the holding member 7 does not directly hold the deposition target substrate 5 but holds the substrate holder 21. In addition, the hole 6 is not formed in the holding member 7.

  The base material holder 21 is formed in a flat plate shape, and a holding opening 22 having a rectangular shape in plan view penetrating vertically is formed. The base material holder 21 is also formed with a transmission hole 26 having a band shape in a plan view and penetrating vertically on one side of the holding opening 22 and extending along the one side. A holding rib 23 that protrudes toward the inside of the holding opening 22 is formed at the lower end portion of the inner peripheral surface of the holding opening 22. Further, fixing holes 27 are formed on both sides in the longitudinal direction of the transmission hole 26 so as to open upward.

  The base material holder 21 holds the pattern mask 8 and the shielding member 10 together with the deposition target base material 5. Both the substrate 5 and the pattern mask 8 have a rectangular shape in plan view that matches the holding opening 22. The pattern mask 8 is formed with openings 16 having the same shape as the pattern shape of the vapor deposition film formed on the vapor deposition substrate 5.

  The shielding member 10 is a separate member from the pattern mask 8 and is formed in a band shape in plan view that is larger than the transmission hole 26 and can close the transmission hole 26. The shielding member 10 has a plurality of holes 6 penetrating vertically. The holes 6 are formed so as to be regularly and uniformly dispersed in the shielding member 10. In addition to the holes 6, fixing holes 28 are formed at positions corresponding to the fixing holes 27 in the base material holder 21 at both ends in the longitudinal direction of the shielding member 10.

  The pattern mask 8 is arranged in the holding opening 22 of the substrate holder 21 and the outer peripheral edge of the pattern mask 8 is arranged on the holding rib 23 so that the pattern mask 8 is held by the substrate holder 21. Furthermore, the deposition target substrate 5 is held on the substrate holder 21 by disposing the deposition target substrate 5 on the pattern mask 8 in the holding opening 22. In addition, the shielding member 10 is disposed on the upper surface of the base material holder 21 so as to cover the transmission hole 26, and the fixing members 27 and 28 of the shielding member 10 and the base material holder 21 are overlapped. The shielding member 10 is held by the base material holder 21 by inserting the fixing pins 29 into 27 and 28.

  The base material holder 21 is placed on the holding ribs 15 of the holding members 7 by placing the edges on both sides in the direction orthogonal to the transport direction of the base material holder 21 so that the base material holder 21 has the pattern mask 8 and the shielding member 10. The vapor deposition substrate 5 is held together with the holding member 7. The shielding member 10 is disposed at a side position in the direction orthogonal to the transport direction with respect to the holding position of the deposition target substrate 5.

  In addition, a film formation rate detector 3 is disposed at an upper position on the opposite side of the cylindrical heating body 2 with respect to the shielding member 10. Therefore, the film formation speed detector 3 is shielded from the upper opening 14 of the cylindrical heating body 2 by the shielding member 10, and the hole 6 in the shielding member 10 detects the film formation speed from the cylindrical heating body 2 side. It penetrates to the vessel 3 side.

  As the film formation rate detector 3, as in the case of the first embodiment, for example, there is a crystal oscillator type detector 3a that measures the film formation film thickness from the film formation mass of the material formed on the surface thereof. In this case, the film formation speed is derived based on the change in the film thickness in the film formation speed detector 3. Further, as the film formation rate detector 3, an optical concentration detector 3b that optically detects the concentration of the vaporized substance 19 emitted from the vapor deposition source 1 can be used. In addition to this, an appropriate detector can be used. For example, a mass spectrometric detector identified from the molecular weight of a molecule introduced into the apparatus and a generated fragment can be used.

  In the vapor deposition apparatus configured as described above, when the vapor deposition film is formed by stacking on the vapor deposition base material 5, first, the load lock chamber 11 and the respective film formation chambers 12 are decompressed as in the first embodiment, and the cylinder In this state, the vapor deposition material 20 is heated by the vapor deposition source 1.

  In this way, the transport means 13 is operated while generating the vaporized substance 19 in the film forming chamber 12. At this time, only the shielding member 10 is held without holding the deposition target substrate 5 on the base material holder 21, the base material holder 21 is held on the holding member 7, and the holding member 7 is moved. A plurality of substrate holders 21 are sequentially arranged on the holding member 7 at intervals, and a gap member 25 having the same width as the substrate holder 21 is arranged between the substrate holders 21. The gap between the base material holders 21 is filled with the gap member 25. At this time, the shielding body 4 is configured at one side including the shielding member 10 in the base material holder 21 and the gap member 25. The base material holders 21 may be arranged without a gap without using the gap member 25. In this case, the shielding body 4 is configured on one side of the base material holder 21 including the shielding member 10. Is done.

  Further, the film formation speed detector 3 detects the film formation speed. At this time, the vaporized substance 19 released from the upper opening 14 of the cylindrical heating body 2 to the outside of the cylindrical heating body 2 reaches the film formation rate detector 3 through the hole 6 of the shielding member 10 in the shielding body 4. For this reason, the amount of the vaporized substance 19 reaching the film formation rate detector 3 is reduced at a constant rate. In addition, since the shield 4 is continuously moving, the positional relationship between the film formation rate detector 3 and the hole 6 of the shield member 10 changes, but the vaporized substance 19 that reaches the film formation rate detector 3 is changed. The amount is averaged overall and becomes nearly uniform. In particular, when the holes 6 of the shielding member 10 are uniformly and regularly dispersed, the uniformity of the amount of the vaporized substance 19 that reaches the film formation rate detector 3 is increased.

  The deposition rate is derived based on the vaporized substance 19 that has reached the deposition rate detector 3. That is, the film formation speed is derived in consideration of the reduction in the amount of the vaporized substance 19 that reaches the film formation speed detector 3 by the shield 4. At this time, the film forming speed is detected on the basis of the vaporized substance 19 that passes through the vicinity of the target substrate 5 on the substantially same plane as the target substrate 5, thereby increasing the detection accuracy of the film forming rate. .

  Here, in the present embodiment, in the state where the deposition target substrate 5 is not arranged at the position facing the upper opening 14 of the cylindrical heating body 2, the film formation rate detector 3 is formed by the shielding body 4. The amount of heat that is completely shielded from the upper opening 14 and reaches the film formation rate detector 3 can be further reduced, and the amount of the vaporized substance 19 that reaches the film formation rate detector 3 can be further suppressed. become. At this time, the film formation rate is a state in which the space between the film formation rate detector 3 and the cylindrical heating body 2 is shielded by the portion (shield member 10) where the hole 6 is formed in the shield 4. Measured based on the detection result of the film velocity detector 3.

  In each film forming chamber 12, when the film forming speed detected by the film forming speed detector 3 reaches a desired speed, the substrate to be deposited 5 and the pattern mask 8 are transferred to the substrate of the transport unit 13 in the load lock chamber 11. The substrate 21 is supplied to and held by the holding body 21 and conveyed, and the deposition target substrate 5 is sequentially passed through the film forming chambers 12. In each film forming chamber 12, the substrate 5 to be deposited passes through a position facing the upper opening 14 of the cylindrical heating body 2, and the shape of the deposited film matches the opening 16 in the pattern mask 8 with respect to the substrate 5 to be deposited. With a desired film thickness. Thereby, a vapor deposition film is sequentially formed on the deposition base material 5.

  During this time, in each film forming chamber 12, the film forming speed is continuously measured by the film forming speed detector 3 to monitor whether the film forming speed in each film forming chamber 12 is as desired. It is possible to detect a film formation defect.

  As described above, when the deposition rate is detected by the deposition rate detector 3 when the deposition film is formed on the deposition target substrate 5, the deposition rate detector 3 is arranged outside the cylindrical heating body 2. Since it is provided and shielded from the cylindrical heating body 2 by the shield 4, the amount of heat reaching the deposition rate detector 3 by radiation or the like from the cylindrical heating body 2 can be reduced, and film formation detection It is possible to prevent a malfunction caused by heat in the vessel.

  Further, when the vaporized substance 19 reaches the film formation rate detector 3 through the hole 6 in the shield 4, the amount of the vaporized substance 19 reaching the film formation rate detector 3 is suppressed, and in the film formation rate detector 3. The adhesion amount of the vaporized substance 19 can be reduced. For this reason, the frequency of replacement and cleaning of the film formation rate detector 3 can be reduced.

  Further, since the shield 4 continuously moves, the vaporized substance 19 attached to the shield 4 does not remain in the film forming chamber 12, and the vaporized substance 19 generates dust in the apparatus or causes contamination. Can be prevented.

  As in the case of the first embodiment, the size, density, etc. of the holes 6 in the shielding member 10 of the shielding body 4 can detect the deposition rate while sufficiently suppressing the deposition of the vaporized substance 19 in the deposition rate detector 3. In addition, the amount of heat reaching the deposition rate detector 3 by the shield 4 can be appropriately set.

  The conveying means 13 is not limited to the above-described one, and passes through the position where the deposition target substrate 5 faces the opening on the deposition target substrate 5 side of the cylindrical heating body 2 while holding the deposition target substrate 5. And a shielding member 10 having a plurality of holes 6 is provided detachably with respect to a member for holding the vapor deposition substrate 5 in the conveying means 13. Any configuration may be used as long as at least a part of the shield 4 is configured by the member 10.

  In each of the embodiments described above, the shield 4 is moved together with the deposition target substrate 5 by the transport unit 13 that transports the deposition target substrate 5. However, the shield 4 is moved by a mechanism separate from the transport unit 13. A body 4 may be provided. In each of the above embodiments, vapor deposition is performed while continuously transporting the deposition target substrate 5, but the deposition target substrate 5 is shielded while being deposited in a state where the arrangement position with respect to the cylindrical heating body 2 is fixed. The body 4 may be moved.

DESCRIPTION OF SYMBOLS 1 Deposition source 2 Cylindrical heating body 3 Deposition rate detector 3a Quartz crystal type detector 3b Optical density detector 4 Shielding body 5 Substrate to be deposited 6 Hole 7 Holding member 8 Pattern mask 9 Shielding part 10 Shielding member 13 Transport means 19 Vaporized substance

Claims (6)

Evaporation source, cylindrical heating body, film formation rate detector and shield
The cylindrical heating body is disposed so as to surround a space between the vapor deposition source and the vapor deposition substrate,
The shield is provided so as to continuously move so as to pass a position facing the opening on the vapor deposition substrate side of the cylindrical heating body,
The film formation rate detector is disposed at a position opposite to the cylindrical heating body side with respect to the shield,
The vapor deposition apparatus, wherein the shield is formed with a plurality of holes penetrating from the cylindrical heating body side to the film formation rate detector side. A transporting means for continuously transporting the deposition target substrate so as to pass through a position facing the opening on the deposition target substrate side of the cylindrical heating body while holding the deposition target substrate,
The vapor deposition apparatus according to claim 1, wherein the shielding body is configured by a holding member that holds a vapor deposition base material in the transport unit. Conveying means for continuously conveying the deposition target substrate and the pattern mask so as to pass through a position facing the opening on the deposition target substrate side of the cylindrical heating body while holding the deposition target substrate and the pattern mask. ,
The vapor deposition apparatus according to claim 1, wherein a shielding portion having a plurality of holes is formed in the pattern mask, and at least a part of the shielding body is configured by the shielding portion. A transporting means for continuously transporting the deposition target substrate so as to pass through a position facing the opening on the deposition target substrate side of the cylindrical heating body while holding the deposition target substrate,
A shielding member having a plurality of holes is provided so as to be detachable from a member for holding a deposition target substrate in the conveying means, and at least a part of the shielding body is configured by the shielding member. The vapor deposition apparatus according to claim 1.   The vapor deposition apparatus according to claim 1, wherein the film formation rate detector is a quartz resonator type detector.   5. The vapor deposition apparatus according to claim 1, wherein the deposition rate detector is an optical concentration detector that optically detects a concentration of a vaporized substance emitted from a vapor deposition source. .

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