JP2010511886A - 半導体センサ装置、そのような装置を有する診断機器、およびそのような装置を製造する方法 - Google Patents

半導体センサ装置、そのような装置を有する診断機器、およびそのような装置を製造する方法 Download PDF

Info

Publication number
JP2010511886A
JP2010511886A JP2009539862A JP2009539862A JP2010511886A JP 2010511886 A JP2010511886 A JP 2010511886A JP 2009539862 A JP2009539862 A JP 2009539862A JP 2009539862 A JP2009539862 A JP 2009539862A JP 2010511886 A JP2010511886 A JP 2010511886A
Authority
JP
Japan
Prior art keywords
semiconductor
region
sensor device
sub
mesa
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2009539862A
Other languages
English (en)
Japanese (ja)
Inventor
カーヤ,ネリマン,エヌ.
バッケルス,エリク,ペー.,アー.,エム.
シュテフェン,トマス
ボルグストロム,ラルス,エム.
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips NV
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips NV, Koninklijke Philips Electronics NV filed Critical Koninklijke Philips NV
Publication of JP2010511886A publication Critical patent/JP2010511886A/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47Scattering, i.e. diffuse reflection
    • G01N21/4738Diffuse reflection, e.g. also for testing fluids, fibrous materials
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y15/00Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00Nanooptics, e.g. quantum optics or photonic crystals
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00Nanotechnology for materials or surface science, e.g. nanocomposites

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Molecular Biology (AREA)
  • Pathology (AREA)
  • Immunology (AREA)
  • Biochemistry (AREA)
  • Analytical Chemistry (AREA)
  • Composite Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Light Receiving Elements (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
JP2009539862A 2006-12-08 2007-12-06 半導体センサ装置、そのような装置を有する診断機器、およびそのような装置を製造する方法 Pending JP2010511886A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP06125723 2006-12-08
PCT/IB2007/054937 WO2008068721A1 (fr) 2006-12-08 2007-12-06 Dispositif de détecteur semi-conducteur, instrument de diagnostic comprenant un tel dispositif et procédé de fabrication d'un tel dispositif

Publications (1)

Publication Number Publication Date
JP2010511886A true JP2010511886A (ja) 2010-04-15

Family

ID=39126175

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009539862A Pending JP2010511886A (ja) 2006-12-08 2007-12-06 半導体センサ装置、そのような装置を有する診断機器、およびそのような装置を製造する方法

Country Status (4)

Country Link
EP (1) EP2092307A1 (fr)
JP (1) JP2010511886A (fr)
CN (1) CN101558290A (fr)
WO (1) WO2008068721A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102018125050A1 (de) * 2018-10-10 2020-04-16 Osram Opto Semiconductors Gmbh Optoelektronischer Sensor

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7301199B2 (en) * 2000-08-22 2007-11-27 President And Fellows Of Harvard College Nanoscale wires and related devices
US7416911B2 (en) * 2003-06-24 2008-08-26 California Institute Of Technology Electrochemical method for attaching molecular and biomolecular structures to semiconductor microstructures and nanostructures
WO2005064664A1 (fr) * 2003-12-23 2005-07-14 Koninklijke Philips Electronics N.V. Composant a semi-conducteur comportant une heterojonction

Also Published As

Publication number Publication date
WO2008068721A1 (fr) 2008-06-12
EP2092307A1 (fr) 2009-08-26
CN101558290A (zh) 2009-10-14

Similar Documents

Publication Publication Date Title
Dai et al. Two-dimensional field-effect transistor sensors: the road toward commercialization
Satterthwaite et al. High responsivity, low dark current ultraviolet photodetectors based on two-dimensional electron gas interdigitated transducers
ES2847890T3 (es) Sensor de RFID de ondas acústicas superficiales para la detección química y diagnósticos (bio)moleculares
KR101387198B1 (ko) 장치 및 관련 방법
Chou et al. Förster resonance energy transfer between quantum dot donors and quantum dot acceptors
Calarco et al. Size-dependent photoconductivity in MBE-grown GaN− nanowires
US6608360B2 (en) One-chip micro-integrated optoelectronic sensor
Anderson et al. Advances in hydrogen, carbon dioxide, and hydrocarbon gas sensor technology using GaN and ZnO-based devices
US20200303534A1 (en) Microelectronic sensor with an aharonov-bohm antenna
US20100019226A1 (en) Semiconductor sensor device, diagnostic instrument comprising such a device and method of manufacturing such a device
EP2023403A1 (fr) Photocapteur d'ultraviolets
US20130214332A1 (en) Nanogrid channel fin-fet transistor and biosensor
Baba Biosensing using photonic crystal nanolasers
US20120256160A1 (en) Piezo-phototronic Effect Devices
An et al. Chemiluminescent lateral-flow immunoassays by using in-situ synthesis of CdS NW photosensor
Brault et al. UVB LEDs grown by molecular beam epitaxy using AlGaN quantum dots
Cavallini et al. Defect distribution along single GaN nanowhiskers
Nourbakhsh et al. Heterogeneous integration of 2D materials and devices on a Si platform
JP2010511886A (ja) 半導体センサ装置、そのような装置を有する診断機器、およびそのような装置を製造する方法
Zhao et al. Recent Progress in Ohmic/Schottky‐Contacted ZnO Nanowire Sensors
US20120141327A1 (en) Label-free biosensor
US7141446B2 (en) Optically- and electrically-addressable concentrators of biological and chemical materials
JP2007071877A (ja) 集積化光電sprセンサ
Ahn et al. High-responsivity InAs quantum well photo-FET integrated on Si substrates for extended-range short-wave infrared photodetector applications
US8709708B2 (en) Quantum dot template for fast and simultaneous detection of different infectious agents