JP2010511886A - 半導体センサ装置、そのような装置を有する診断機器、およびそのような装置を製造する方法 - Google Patents
半導体センサ装置、そのような装置を有する診断機器、およびそのような装置を製造する方法 Download PDFInfo
- Publication number
- JP2010511886A JP2010511886A JP2009539862A JP2009539862A JP2010511886A JP 2010511886 A JP2010511886 A JP 2010511886A JP 2009539862 A JP2009539862 A JP 2009539862A JP 2009539862 A JP2009539862 A JP 2009539862A JP 2010511886 A JP2010511886 A JP 2010511886A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- region
- sensor device
- sub
- mesa
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 135
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- 238000000034 method Methods 0.000 title description 19
- 239000000463 material Substances 0.000 claims abstract description 52
- 239000000126 substance Substances 0.000 claims abstract description 44
- 230000005855 radiation Effects 0.000 claims abstract description 28
- 230000005670 electromagnetic radiation Effects 0.000 claims abstract description 19
- 239000011149 active material Substances 0.000 claims abstract description 8
- 239000012530 fluid Substances 0.000 claims abstract description 7
- 239000002070 nanowire Substances 0.000 claims description 42
- 229910052710 silicon Inorganic materials 0.000 claims description 15
- 239000010703 silicon Substances 0.000 claims description 15
- 150000001875 compounds Chemical class 0.000 claims description 11
- 229910021480 group 4 element Inorganic materials 0.000 claims description 8
- 230000003287 optical effect Effects 0.000 claims description 7
- 239000002096 quantum dot Substances 0.000 claims description 7
- 108090000623 proteins and genes Proteins 0.000 claims description 6
- 102000004169 proteins and genes Human genes 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 4
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 3
- 238000001228 spectrum Methods 0.000 claims description 3
- 230000000737 periodic effect Effects 0.000 claims description 2
- 230000001939 inductive effect Effects 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
- 230000035945 sensitivity Effects 0.000 description 14
- 238000001514 detection method Methods 0.000 description 13
- 239000010410 layer Substances 0.000 description 6
- 102000053602 DNA Human genes 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 4
- 108020004414 DNA Proteins 0.000 description 4
- 238000000407 epitaxy Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 201000010099 disease Diseases 0.000 description 3
- 208000037265 diseases, disorders, signs and symptoms Diseases 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 108020004635 Complementary DNA Proteins 0.000 description 2
- 229910000673 Indium arsenide Inorganic materials 0.000 description 2
- 238000010804 cDNA synthesis Methods 0.000 description 2
- 239000002299 complementary DNA Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 239000013076 target substance Substances 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910007709 ZnTe Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000000427 antigen Substances 0.000 description 1
- 102000036639 antigens Human genes 0.000 description 1
- 108091007433 antigens Proteins 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000008280 blood Substances 0.000 description 1
- 210000004369 blood Anatomy 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000003745 diagnosis Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- HDDJZDZAJXHQIL-UHFFFAOYSA-N gallium;antimony Chemical compound [Ga+3].[Sb] HDDJZDZAJXHQIL-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 208000015181 infectious disease Diseases 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000011321 prophylaxis Methods 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
- G01N21/4738—Diffuse reflection, e.g. also for testing fluids, fibrous materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Molecular Biology (AREA)
- Pathology (AREA)
- Immunology (AREA)
- Biochemistry (AREA)
- Analytical Chemistry (AREA)
- Composite Materials (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Biophysics (AREA)
- Optics & Photonics (AREA)
- Light Receiving Elements (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP06125723 | 2006-12-08 | ||
PCT/IB2007/054937 WO2008068721A1 (fr) | 2006-12-08 | 2007-12-06 | Dispositif de détecteur semi-conducteur, instrument de diagnostic comprenant un tel dispositif et procédé de fabrication d'un tel dispositif |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2010511886A true JP2010511886A (ja) | 2010-04-15 |
Family
ID=39126175
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009539862A Pending JP2010511886A (ja) | 2006-12-08 | 2007-12-06 | 半導体センサ装置、そのような装置を有する診断機器、およびそのような装置を製造する方法 |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP2092307A1 (fr) |
JP (1) | JP2010511886A (fr) |
CN (1) | CN101558290A (fr) |
WO (1) | WO2008068721A1 (fr) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102018125050A1 (de) * | 2018-10-10 | 2020-04-16 | Osram Opto Semiconductors Gmbh | Optoelektronischer Sensor |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7301199B2 (en) * | 2000-08-22 | 2007-11-27 | President And Fellows Of Harvard College | Nanoscale wires and related devices |
US7416911B2 (en) * | 2003-06-24 | 2008-08-26 | California Institute Of Technology | Electrochemical method for attaching molecular and biomolecular structures to semiconductor microstructures and nanostructures |
WO2005064664A1 (fr) * | 2003-12-23 | 2005-07-14 | Koninklijke Philips Electronics N.V. | Composant a semi-conducteur comportant une heterojonction |
-
2007
- 2007-12-06 WO PCT/IB2007/054937 patent/WO2008068721A1/fr active Application Filing
- 2007-12-06 JP JP2009539862A patent/JP2010511886A/ja active Pending
- 2007-12-06 CN CNA2007800452346A patent/CN101558290A/zh active Pending
- 2007-12-06 EP EP07849347A patent/EP2092307A1/fr not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
WO2008068721A1 (fr) | 2008-06-12 |
EP2092307A1 (fr) | 2009-08-26 |
CN101558290A (zh) | 2009-10-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Dai et al. | Two-dimensional field-effect transistor sensors: the road toward commercialization | |
Satterthwaite et al. | High responsivity, low dark current ultraviolet photodetectors based on two-dimensional electron gas interdigitated transducers | |
ES2847890T3 (es) | Sensor de RFID de ondas acústicas superficiales para la detección química y diagnósticos (bio)moleculares | |
KR101387198B1 (ko) | 장치 및 관련 방법 | |
Chou et al. | Förster resonance energy transfer between quantum dot donors and quantum dot acceptors | |
Calarco et al. | Size-dependent photoconductivity in MBE-grown GaN− nanowires | |
US6608360B2 (en) | One-chip micro-integrated optoelectronic sensor | |
Anderson et al. | Advances in hydrogen, carbon dioxide, and hydrocarbon gas sensor technology using GaN and ZnO-based devices | |
US20200303534A1 (en) | Microelectronic sensor with an aharonov-bohm antenna | |
US20100019226A1 (en) | Semiconductor sensor device, diagnostic instrument comprising such a device and method of manufacturing such a device | |
EP2023403A1 (fr) | Photocapteur d'ultraviolets | |
US20130214332A1 (en) | Nanogrid channel fin-fet transistor and biosensor | |
Baba | Biosensing using photonic crystal nanolasers | |
US20120256160A1 (en) | Piezo-phototronic Effect Devices | |
An et al. | Chemiluminescent lateral-flow immunoassays by using in-situ synthesis of CdS NW photosensor | |
Brault et al. | UVB LEDs grown by molecular beam epitaxy using AlGaN quantum dots | |
Cavallini et al. | Defect distribution along single GaN nanowhiskers | |
Nourbakhsh et al. | Heterogeneous integration of 2D materials and devices on a Si platform | |
JP2010511886A (ja) | 半導体センサ装置、そのような装置を有する診断機器、およびそのような装置を製造する方法 | |
Zhao et al. | Recent Progress in Ohmic/Schottky‐Contacted ZnO Nanowire Sensors | |
US20120141327A1 (en) | Label-free biosensor | |
US7141446B2 (en) | Optically- and electrically-addressable concentrators of biological and chemical materials | |
JP2007071877A (ja) | 集積化光電sprセンサ | |
Ahn et al. | High-responsivity InAs quantum well photo-FET integrated on Si substrates for extended-range short-wave infrared photodetector applications | |
US8709708B2 (en) | Quantum dot template for fast and simultaneous detection of different infectious agents |