JP2010280564A - Aluminum nitride substrate - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To obtain a high quality aluminum nitride substrate excellent in heat dissipation properties of ≥190 W/m K thermal conductivity, which prevents defective appearance and solderability from degrading. <P>SOLUTION: This single layer aluminum nitride substrate with ≤1.5 mm thickness is provided on the surface with a metallized layer comprising W or Mo as a main component and formed by a cofiring method, where the aluminum nitride substrate except the metallized layer has thermal conductivity of ≥190 W/m K; the thickness of the metallized layer is 1-20 μm; and when observing the surface of the metallized layer by magnifying 20 times, any liquid phase component is not observed. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to an aluminum nitride substrate having a metallized layer on the surface and a high thermal conductivity of 190 W / m · K or more, and a method for producing the same.

  In recent years, along with miniaturization and higher density of electronic devices, semiconductor components are required to have a large current, and the amount of heat generated with higher output of semiconductor components tends to increase. For this reason, how to dissipate heat from the semiconductor component is an important issue.

  Aluminum nitride (AlN) is optimal as a substrate for semiconductor components because it has high thermal conductivity, good electrical insulation, and excellent properties such as almost the same thermal expansion coefficient as Si.

  By the way, in order to use aluminum nitride (AlN) as a semiconductor substrate, it is necessary to form a metallized layer made of a conductive metal on the surface of the AlN substrate for the purpose of forming a circuit, a mounting portion of an electronic component, or the like. is there. As one method for metallization, a co-firing method is used. In general, a metallized layer is formed on the substrate surface in the following procedure.

  A binder made of an organic compound is added to aluminum nitride (AlN) to form a slurry, which is formed into a sheet by a doctor blade method to obtain an AlN green sheet. Then, a high melting point metal powder paste such as W or Mo is printed on the surface of the AlN green sheet, and the obtained molded body is heated and degreased, and then sintered in a non-oxidizing atmosphere to obtain an AlN sintered body. obtain.

  In the simultaneous sintering method, the sintering of the AlN substrate and the baking of the metallized layer on the AlN substrate are performed simultaneously by one firing, and therefore, there is an advantage that the number of manufacturing steps is less than the method of performing metallization after firing. .

  On the other hand, with the increase in power consumption of semiconductors, there is an increasing demand for AlN substrates with high thermal conductivity and better heat dissipation. In fact, AlN substrates with high thermal conductivity of 190 W / m · K or more are required. ing.

  However, in order to obtain a thermal conductivity of 190 W / m · K or more, it is necessary to sinter at a firing temperature exceeding 1800 ° C. However, when sintered at a high temperature exceeding 1800 ° C., the glass component in the AlN substrate is reduced. There were problems such as elution and infiltration of glass components.

  If the glass component in the AlN sintered body elutes on the substrate surface during sintering, it may cause spots, discoloration, etc. on the AlN substrate surface. Also, if the glass component infiltrates into the metallized layer and oozes out on the metallized surface, the appearance of the metallized part will be poor and the solderability will deteriorate, etc., and circuit formation and electronic parts will be mounted on the metallized layer I can't. That is, an AlN substrate having a thermal conductivity of 190 W / m · K or more and having a metallized layer on the surface has not been obtained so far.

  Therefore, in the past, an AlN substrate having a thermal conductivity of 190 W / m · K or higher, which was previously sintered at a high temperature exceeding 1800 ° C., was prepared, and glass components that had exuded to the surface were removed by polishing or the like. A post-fire method in which a high melting point metal paste is printed on a substrate surface and baked has been employed. In the case of the post-fire method, the number of steps is larger than that in the simultaneous firing method, and it is necessary to remove the glass component by polishing or the like. In addition, there is a problem that it is necessary to make the AlN substrate thick in advance for the polishing cost, and the manufacturing efficiency is poor.

  In addition to the metallization method by the postfire method, a method of forming a thin film on the substrate surface has been performed. For example, there is a thin film formation by vapor deposition, a sputtering method or a chemical vapor deposition (CVD) which is a kind of vacuum vapor deposition method, but in such a method, the number of manufacturing steps is larger than that of a post-fire, Further, like the postfire, there is a problem that the substrate surface needs to be polished.

  The present invention has been made to solve such problems, and has a thermal conductivity of 190 W / m · K or more, excellent heat dissipation, and a glass component or the like on the metallized layer. An object of the present invention is to provide a high-quality aluminum nitride substrate that exudes and prevents appearance defects and solderability deterioration due to spotting.

  It is another object of the present invention to provide a method for manufacturing an aluminum nitride substrate capable of reducing the number of manufacturing steps by the simultaneous firing method, improving the production efficiency, and realizing mass production.

  In order to achieve the above object, the inventors of the present application have made extensive studies, and as a result, by appropriately adjusting the thickness of the AlN substrate, the glass component does not elute on the surface of the AlN substrate, and the thermal conductivity is 190 W / It has been found that there is a firing condition of m · K or more. That is, when the thickness of the AlN substrate exceeds 1.5 mm, the thermal conductivity does not become 190 W / m · K or more unless fired at a temperature higher than 1800 ° C. However, when baked at such a high temperature, the glass component not only moves to the back surface of the AlN substrate but also oozes out to the surface of the AlN substrate, and a high-quality AlN substrate cannot be obtained.

  Therefore, the inventors of the present application have found that when the thickness of the AlN substrate is 1.5 mm or less, an aluminum nitride substrate having a thermal conductivity of 190 W / m · K or more can be obtained even when firing at a temperature of 1800 ° C. or less. That is, when the thickness of the AlN substrate is 1.5 mm or less, preferably 1.0 mm or less, the glass component in the AlN substrate at the time of firing moves to the back surface of the AlN substrate due to gravity and is further absorbed into the setter. The glass component does not elute on the surface. Therefore, elution of the glass component on the surface of the AlN substrate does not occur, and problems such as poor appearance disappear. The present inventors have completed the invention based on such knowledge. That is, the invention described in claim 1 excludes a metallized layer in a single-layer aluminum nitride substrate having a thickness of 1.5 mm or less and having a metallized layer mainly composed of W or Mo formed by a co-firing method on the surface. The aluminum nitride substrate has a thermal conductivity of 190 W / m · K or more, the thickness of the metallized layer is 1 to 20 μm, and no liquid phase component is observed when the surface of the metallized layer is magnified 20 times. Features.

  2. The aluminum nitride substrate according to claim 1, wherein the substantial thickness of the aluminum nitride substrate excluding the metallized layer is preferably 1.5 mm or less.

  In the present invention, the substantial thickness of the aluminum nitride substrate is used. However, in the case of a single-layer structure consisting of a single sheet, the thickness of the aluminum nitride substrate excluding the metallized layer is shown, and a multilayer structure in which a plurality of layers are stacked. In this case, the total thickness of the aluminum nitride substrates excluding the metallized layer of each aluminum nitride substrate is shown.

  In the aluminum nitride substrate according to claim 1, the thickness of the aluminum nitride substrate excluding the metallized layer is preferably 1.0 mm or less, and more preferably 0.6 to 1.0 mm.

  The invention according to claim 2 is the aluminum nitride substrate according to claim 1, wherein the thickness of the aluminum nitride substrate excluding the metallized layer is 0.6 to 1.0 mm.

  The invention according to claim 3 is the aluminum nitride substrate according to claim 1, wherein the metallized layer contains AlN.

  2. The aluminum nitride substrate according to claim 1, wherein the metallized layer is mainly composed of a refractory metal of W or Mo.

  In the present invention, a metallized layer made of a refractory metal such as W or Mo may contain 20% by weight or less of a compound such as AlN.

  2. The aluminum nitride substrate according to claim 1, wherein the aluminum nitride substrate has a multilayer structure in which a plurality of the substrates are stacked.

  In the aluminum nitride substrate according to claim 1, the thickness of the metallized layer is preferably 1 μm or more.

  In the present invention, by setting the thickness of the metallized layer to 1 μm or more, it is possible to more effectively prevent the liquid phase component from exuding. The thickness of the metallized layer is preferably 3 to 20 μm, more preferably 5 to 15 μm. If the thickness exceeds 20 μm, the bleeding of the liquid phase component can be suppressed, but the thickness of the metallized layer becomes too thick and uniform. It becomes difficult to form. Further, since the amount of a high melting point metal such as W or Mo used as the metallization layer increases, it is not preferable from the viewpoint of cost.

  The method for producing an aluminum nitride substrate of the present invention comprises aluminum nitride (AlN) as a main component, a sintering aid and a binder are added to prepare raw materials, and an aluminum nitride molded body is obtained. The surface of the aluminum nitride molded body After applying a refractory metal paste to the surface and heating and degreasing, an aluminum nitride molded body having a substantial thickness of 1.5 mm or less excluding the metallized layer mainly composed of the refractory metal was placed on the setter. In a non-oxidizing atmosphere, firing is performed at a temperature of 1800 ° C. or lower.

  According to the present invention, when the thickness of the AlN substrate is 1.5 mm or less, the glass component in the AlN substrate at the time of firing moves to the back surface of the AlN substrate due to gravity and is absorbed into the setter. Even when baked at a temperature of 1800 ° C. or less, a high-quality AlN substrate having a high thermal conductivity of 190 W / m · K or more can be obtained.

  In the method for producing an aluminum nitride substrate of the present invention, it is preferable to use a setter made of high-purity aluminum nitride.

  According to the present invention, the glass component in the AlN substrate can be efficiently absorbed in the setter by applying the setter made of aluminum nitride highly purified by high temperature sintering or the like.

  In the method for producing an aluminum nitride substrate of the present invention, it is preferable to use an aluminum nitride molded body having a single layer structure or an aluminum nitride molded body having a multilayer structure in which a plurality of the aluminum nitride molded bodies are laminated.

  In the method for producing an aluminum nitride substrate of the present invention, it is preferable to add a sintering aid to aluminum nitride at a ratio of 10% by weight or less.

In the present invention, the proportion of addition of the sintering aid is set to 10% by weight or less with respect to aluminum nitride. However, if the amount exceeds 10% by weight, the amount of the liquid phase component exudes increases and the adhesion strength of the metallized layer decreases. It is because the problem of doing will arise. In the present invention, a setter made of high-purity AlN is used. For example, such a setter sinters AlN containing 3% by weight of yttrium oxide (Y ₂ O ₃ ) at a predetermined temperature to cause the liquid phase component (glass component) to bleed out, and more liquid phase components. The setter made of such an AlN sintered body has substantially no liquid phase component and AlN is almost 97 to 100%. It becomes. If such a high-purity AlN setter is used, since the setter absorbs the liquid phase component that exudes from the AlN substrate (sintered body) as described above, a co-fired metallized substrate can be produced efficiently.

  According to the present invention, a high-quality aluminum nitride substrate having a thermal conductivity of 190 W / m · K or more and excellent heat dissipation is obtained, and a metallized layer is formed by a simultaneous firing method. In addition, a method for manufacturing an AlN substrate that can be mass-produced can be obtained.

  Hereinafter, embodiments of the present invention will be described using Examples, Comparative Example 1, Comparative Example 2, and cited examples.

Examples (Table 1: Sample No. 1 to Sample No. 11)
In this example, No. 1 shown in Table 1 in which the substantial thickness of the aluminum nitride (AlN) substrate is 1.5 mm or less. 1 to No. Eleven samples were used. Sample No. One AlN substrate is manufactured as follows.

First, 5 wt% of yttrium oxide (Y ₂ O ₃ ) powder is added as a sintering aid to aluminum nitride (AlN) powder having an average particle size of 1.5 μm to prepare a raw material powder, which is crushed and mixed in a ball mill Went. An organic binder and an organic solvent were added to the raw material powder, and then mixed to form a slurry. This slurry was formed into a sheet by a doctor blade method to produce one AlN green sheet having a substantial thickness of 1.5 mm.

  On the other hand, an appropriate amount of a resin binder and a dispersant were mixed with tungsten (W) powder having an average particle diameter of 1 μm to prepare a W paste, and a material for the metallized layer was prepared.

  Next, W paste was screen printed on an AlN green sheet and dried. The AlN green sheet coated with the W paste was degreased for 3 hours at a temperature of 900 ° C. in a nitrogen atmosphere.

On the other hand, a setter made of AlN containing 3% by weight of yttrium oxide (Y ₂ O ₃ ) was baked at a high temperature of 1900 ° C. to exude the liquid phase component to prepare a setter made of high-purity AlN.

  A degreased AlN green sheet is placed on the high-purity AlN setter, fired at a temperature of 1800 ° C. for 6 hours in a nitrogen atmosphere, and the AlN substrate and the W layer are simultaneously fired to form a single layer. An AlN substrate was produced. This is designated as Sample No. It was set to 1.

  In addition, the sample No. used in this example. 2 to Sample No. The AlN substrate of No. 8 is sample No. 1 is an AlN substrate manufactured in substantially the same procedure as in FIG. As shown in Table 1, sample no. In No. 2, the thickness of the AlN substrate is 1.5 mm, and W and AlN are used as the composition of the metallized layer. Sample No. 3 to Sample No. The AlN substrate No. 7 is a single layer AlN substrate that is gradually reduced by 0.2 mm from a thickness of 1.4 mm. Sample No. No. 8 is an AlN substrate having a multilayer structure in which two 0.4 mm AlN green sheets coated with W paste are laminated and then sintered. Sample No. 9 to Sample No. Reference numeral 11 represents a variation in the thickness of the metallized layer. All of the metallized layers to which AlN was added were those containing 3% by weight of AlN. No. 1 to No. In each of the 11 samples, the thickness of the AlN substrate excluding the metallized layer was substantially 1.5 mm or less, and the sintering temperature was 1800 ° C. or less.

Comparative Example 1 (Table 1: Sample No. 12, Sample No. 13)
In this comparative example, No. 1 in which the substantial thickness of the aluminum nitride (AlN) substrate exceeds 1.5 mm. 12 and no. Thirteen samples were used. Note that the procedure for manufacturing the AlN substrate is the same as in the example.

  As shown in Table 1, sample no. 12 is a single-layer AlN substrate having a thickness of 2.0 mm. No. 13 is an AlN substrate having a multilayer structure in which a substantial thickness of the AlN substrate exceeds 1.5 mm by laminating four AlN green sheets having a thickness of 0.4 mm and then sintering. The components, thickness, and sintering conditions of the metallized layer are as shown in Table 1.

Comparative Example 2 (Table 1: Sample No. 14)
In this comparative example, a setter made of boron nitride (BN) was used at the time of firing, and a single-layer AlN substrate having a thickness of 1.5 mm was used as a sample no. 14. The procedure for producing the AlN substrate is almost the same as in the example, and the components, thickness, and sintering conditions of the metallized layer are as shown in Table 1.

Citation (Japanese Patent Laid-Open No. 5-190703 (Table 1: Sample No. 15))
This reference example is an aluminum nitride substrate described in Japanese Patent Application Laid-Open No. 5-190703. After laminating eight layers of 0.4 mm thick AlN green sheets, sintering is performed to obtain a multilayered AlN substrate as a sample No. . 15 was used. The procedure for producing the AlN substrate is almost the same as in the example, and the components, thickness, and sintering conditions of the metallized layer are as shown in Table 1.

  Sample No. in Example, Comparative Example 1, Comparative Example 2 and Cited Example thus obtained. 1 to sample no. The appearance of 15 AlN substrates was observed. As appearance observation, when the surface of the metallized layer was magnified 20 times with a microscope, it was measured based on whether or not oozing of the liquid phase component was observed. Specifically, when the liquid phase component was observed with a microscope, the appearance was good when the liquid phase component was not observed, and the appearance was poor when the liquid phase component was observed. Moreover, the thermal conductivity was measured about each AlN board | substrate. The thermal conductivity was measured using a laser flash method. The results are shown in Table 1.

  As shown in Table 1, sample no. 12 to Sample No. The AlN substrate No. 15 had spots and discoloration on the surface of the AlN substrate, the appearance was poor, and the thermal conductivity was 190 W / m · K or less. 1 to sample no. The AlN substrate of No. 8 had no appearance of stains or discoloration and had a good appearance. In all cases, the thermal conductivity showed a high value of 190 W / m · K or more, and a high-quality AlN substrate having excellent heat dissipation was obtained. It should be noted that sample No. 1 having a metallization layer thickness of 1 μm was used. In No. 10, a small amount of liquid phase component began to be observed, and it was found that the thickness of the metallized layer is preferably 1 μm or more. On the other hand, sample no. No exudation was observed in No. 11, and it was found from this point that the addition of AlN to the metallized layer also had an effect of preventing the exudation of the liquid phase component.

  According to the present embodiment, by setting the AlN substrate thickness to 1.5 mm or less, even when the sintering temperature is 1800 ° C. or less, a thermal conductivity of 190 W / m · K or more is 190 W by the simultaneous firing method. An AlN substrate having / m · K can be obtained. Therefore, since the simultaneous firing method is applied in the present embodiment, the number of manufacturing steps can be reduced, the production efficiency can be improved, and thereby the mass production of the AlN substrate can be achieved. Moreover, since the AlN substrate produced by the production method of the present invention has a high thermal conductivity of 190 W / m · K or more and is excellent in heat dissipation, it can be used as a substrate for semiconductor components with high output, Further reduction in size and density of electronic devices can be achieved.

  Even in the case of a multi-layer structure as in this embodiment, the AlN substrate has excellent heat dissipation, so that the integration density can be increased and the electronic device can be reduced in size and density.

Claims (3)

In a single layer aluminum nitride substrate having a thickness of 1.5 mm or less and having a metallized layer mainly composed of W or Mo formed by a co-firing method on the surface,
The aluminum nitride substrate excluding the metallized layer has a thermal conductivity of 190 W / m · K or more, the thickness of the metallized layer is 1 to 20 μm, and the liquid phase component is observed when the surface of the metallized layer is magnified 20 times. An aluminum nitride substrate that is not observed. 2. The aluminum nitride substrate according to claim 1, wherein the thickness of the aluminum nitride substrate excluding the metallized layer is 0.6 to 1.0 mm. 2. The aluminum nitride substrate according to claim 1, wherein the metallized layer contains AlN.