JP2010251180A - Photoelectric conversion element and solar cell - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a sensitizing dye of a new type with high conversion efficiency, and high durability, applicable to a dye-sensitized photoelectric conversion element, and provide a highly efficient photo-electric conversion element, and a solar cell using it. <P>SOLUTION: The photo-electric conversion element which contains a compound expressed by general formula (1) between counter electrodes and the solar cell using the same are provided. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a photoelectric conversion element and a solar cell.

  In recent years, the use of sunlight, which is infinite and does not generate harmful substances, has been energetically studied. What is currently put into practical use as solar energy, which is a clean energy source, includes residential single crystal silicon, polycrystalline silicon, amorphous silicon, and inorganic solar cells such as cadmium telluride and indium copper selenide. .

  However, the disadvantages of these inorganic solar cells include, for example, that silicon is required to have a very high purity, and naturally, the purification process is complicated, the number of processes is large, and the manufacturing cost is high.

  On the other hand, many solar cells using organic materials have been proposed. As an organic solar cell, a Schottky photoelectric conversion element that joins a p-type organic semiconductor and a metal having a low work function, a p-type organic semiconductor and an n-type inorganic semiconductor, or a p-type organic semiconductor and an electron-accepting organic compound are joined. There are heterojunction photoelectric conversion elements and the like, and organic semiconductors used are synthetic dyes and pigments such as chlorophyll and perylene, conductive polymer materials such as polyacetylene, or composite materials thereof. These are thinned by a vacuum deposition method, a casting method, a dipping method, or the like to form a battery material. Although organic materials have advantages such as low cost and easy area enlargement, there are many problems that the conversion efficiency is as low as 1% or less and the durability is poor.

  Under such circumstances, a solar cell exhibiting good characteristics has been reported by Dr. Gretzell of Switzerland (see Non-Patent Document 1). The proposed battery is a dye-sensitized solar cell, which is a wet solar cell using a titanium oxide porous thin film spectrally sensitized with a ruthenium complex as a working electrode. The advantage of this method is that it is not necessary to purify inexpensive metal compound semiconductors such as titanium oxide to high purity, and therefore, the light that can be used at low cost extends over a wide visible light region, and the sun is rich in visible light components. It is that light can be effectively converted into electricity.

  On the other hand, ruthenium complexes with limited resources are used, so when this solar cell is put to practical use, the supply of ruthenium complexes is in danger. In addition, the ruthenium complex is expensive and has problems with stability over time. If the ruthenium complex can be changed to an inexpensive and stable organic dye, this problem can be solved.

  It is known that a dye molecule having both a π-electron conjugated system having an electron donating ability and an acidic adsorbing group having an electron withdrawing property provides an element having high photoelectric conversion efficiency. Triarylamine derivatives are widely used as the electron-donating π-electron system (see, for example, Patent Documents 1 to 4).

  However, it has been found that these dyes are poorly adsorbed on titanium oxide and have not yet achieved a high sensitization effect and have problems with durability.

JP 2005-123033 A JP 2006-079898 A JP 2006-134649 A JP 2006-156212 A

Nature, 353, 737 (1991), B.R. O'Regan and M.C. Gratzel

  An object of the present invention is to provide a novel, high conversion efficiency and high durability sensitizing dye used for a sensitizing dye type photoelectric conversion element, and to provide a highly efficient photoelectric conversion element and a solar cell using the same. Is to provide.

  The above object of the present invention can be achieved by the following configuration.

  1. A photoelectric conversion element comprising a compound represented by the following general formula (1) between counter electrodes.

(Wherein Q _{1 to} Q ₁₆ are each independently a hydrogen atom, a halogen atom, a nitro group, a cyano group, a hydroxyl group, a carboxyl group, a thiol group, an optionally substituted alkyl group, an alkenyl group, an alkynyl group, an alkoxy group, Represents a thioalkyl group, an amino group, an aromatic hydrocarbon group, or a heterocyclic group, and P _{1 to} P ₃ are each independently a hydrogen atom, a halogen atom, a nitro group, a cyano group, a hydroxyl group, a carboxyl group, a thiol group, or a substituted group. Represents an alkyl group, an alkenyl group, an alkynyl group, an alkoxy group, a thioalkyl group, an amino group, an aromatic hydrocarbon group, or a heterocyclic group, and at least one of P _{1 to} P ₃ represents an electron-withdrawing group. Q _{1 to} Q ₁₆ and P _{1 to} P ₃ may form a cyclic structure directly or via another bonding atom. (The double bond may be either a cis form or a trans form.)
2. 2. The photoelectric conversion element as described in 1 above, wherein the compound represented by the general formula (1) is a compound represented by the following general formula (2).

(In the formula, Q _{1 to} Q ₆ , Q _{7 to} Q ₈ , Q _{10 to} Q ₁₁ , Q _{12 to} Q ₁₃ , Q _{15 to} Q ₁₆ , and P _{1 to} P ₃ are represented by the general formula (1). Q _{1 to} Q ₆ , Q _{7 to} Q ₈ , Q _{10 to} Q ₁₁ , Q _{12 to} Q ₁₃ , Q _{15 to} Q ₁₆ , and P _{1 to} P _{3 of the} compound having the same meaning as Q ₁₇ and Q ₃ are represented. ₁₈ each independently represents a hydrogen atom, an optionally substituted aromatic hydrocarbon group, or a heterocyclic group, and R ₁ and R ₂ each independently represents a hydrogen atom, a halogen atom, a nitro group, a cyano group, or a hydroxyl group. , A carboxyl group, a thiol group, an optionally substituted alkyl group, an alkenyl group, an alkynyl group, an alkoxy group, a thioalkyl group, an amino group, an aromatic hydrocarbon group, or a heterocyclic group, and n1 and n2 are each 0. Or 1)
3. 2. The photoelectric conversion element as described in 1 above, wherein the compound represented by the general formula (1) is a compound represented by the following general formula (3).

_(Wherein, Q 1 _{to Q 16} and _{P 1} represents _Q 1 _{to Q 16} and _{P 1} group having the same meaning of the compound represented by the general formula (1), _{R 3} and _{R 4} are each independently A hydrogen atom, a halogen atom, a nitro group, a cyano group, a hydroxyl group, a carboxyl group, a thiol group, an optionally substituted alkyl group, an alkenyl group, an alkynyl group, an alkoxy group, a thioalkyl group, an amino group, an aromatic hydrocarbon group, or Represents a heterocyclic group.)
4). 4. The photoelectric conversion element according to any one of 1 to 3, wherein the compounds represented by the general formulas (1) to (3) have a carboxyl group.

  5. 4. The photoelectric conversion element according to any one of 1 to 3, wherein the compounds represented by the general formulas (1) to (3) have a cyano group.

  6). In the photoelectric conversion element in which at least a semiconductor layer and a charge transport layer are provided between the counter electrodes, the semiconductor layer contains at least one selected from the compounds represented by the general formulas (1) to (3). The photoelectric conversion element according to any one of 1 to 5, wherein the photoelectric conversion element is characterized in that

  7). The photoelectric conversion element according to any one of 1 to 6, wherein the semiconductor forming the semiconductor layer is titanium oxide.

  8). A solar cell comprising the photoelectric conversion element according to any one of 1 to 7 above.

  By using the sensitizing dye of the present invention, a photoelectric conversion element and a solar cell having high conversion efficiency and excellent durability could be obtained.

  The present invention will be described in more detail.

  The present inventor determined that a sensitizing dye generates a current by repeating a photo-oxidation reaction during power generation, and that a dye having excellent light stability and strong resistance to oxidation is suitable for improving durability. . Therefore, the present inventors have added an acidic group to oxidize in order to efficiently transfer the photoexcited electrons to the titanium oxide electrode by using diaryl and naphthylamine having high photoelectric conversion efficiency as the mother nucleus of the sensitizing dye. We thought that a structure capable of forming a bond with titanium was good.

  Furthermore, the sensitizing dye was expected to stabilize the excited state and improve the light stability due to the formation of aggregates.

  Therefore, the present inventors have estimated that the introduction of an aromatic ring having a condensed polycyclic structure makes it possible to enhance the π-π interaction.

  Furthermore, by having a structure in which a highly planar naphthalene derivative unit is directly connected to a donor unit containing nitrogen that is expected to play a central role in the photoelectric conversion function of the sensitizing dye, It is thought that aggregation of sensitizing dyes can be promoted. In addition, the donor unit containing nitrogen and the acidic group which is an adsorption group of titanium oxide can be spatially separated, and the charge separation state is improved, so that the photoelectric conversion efficiency can be improved, which is preferable.

  As a result, a novel sensitizing dye having high photoelectric conversion efficiency and high durability was found as a dye-sensitized photoelectric conversion element, and the present invention was completed.

In the general formula (1), Q _{1 to} Q ₁₆ may include the above-described substituents. Furthermore, examples of the halogen atom represented by Q _{1 to} Q ₁₆ include a chlorine atom, a bromine atom, and an iodine atom. Alkyl groups such as fluorine atom, methyl group, ethyl group, propyl group, isopropyl group, tert-butyl group, pentyl group, hexyl group, cyclohexyl group, etc., alkenyl groups such as ethenyl group, propenyl group, etc., alkynyl As the group, ethynyl group, propynyl group, etc., as alkoxy group, methoxy group, ethoxy group, propyloxy group, pentyloxy group, cyclopentyloxy group, hexyloxy group, cyclohexyloxy group, etc., as thioalkyl group, methylthio group , Ethylthio group, propylthio group, isopropylthio group, tert-butyl Thio group, etc., amino group, methylamino group, ethylamino group, propylamino group, dimethylamino group, diethylamino group, methyl-ethylamino group, etc., aromatic hydrocarbon group, phenyl group etc., heterocyclic group, etc. As the mother nucleus of pyridine, pyrazine, pyridazine, pyrrole, indole, furan, benzofuran, thiophene, benzothiophene, pyrazole, pyrazolone, imidazole, triazole, oxazole, thiazole, isothiazole, thiadiazole, isoxazole, thiazolone, thiazolonedione, rhodamine Etc. Each substituent other than the halogen atom may be further substituted. In Q _{1 to} Q ₁₆ , a hydrogen atom, a heterocyclic group, or an alkyl group or alkenyl group having a heterocyclic group is preferable.

Substituent represented by P ₁ to P ₃ may be a group mentioned in _Q 1 _{to Q 16} described above. P _{1 to} P ₃ are preferably a hydrogen atom, a cyano group, a hydroxyl group, a carboxyl group, or an alkyl group, and particularly preferably a substituent containing a heterocyclic group. P ₂ or P ₃ is preferably a group having an acidic group, but the acidic group is preferably a carboxyl group. Also preferred are those in which P ₂ and P ₃ are bonded to form a ring.

Preferable heterocyclic nuclei represented by P _{1 to} P ₃ include thiophene, thiazole, thiazolone, thiazolonedione, rhodanine, pyrazolone, thiohydantoin, and imidazolone.

  As the compound represented by the general formula (1) of the present invention, the compound represented by the general formula (2) or the general formula (3) is preferable in terms of deterioration resistance stability of conversion efficiency.

  Hereinafter, although the specific example of a compound represented by General formula (1) of this invention is given, this invention is not limited to these.

Synthesis Example Synthesis Example 1 (Synthesis of Exemplified Compound A-1)

2.3 g (0.01 mol) of 4,4′-dimethoxydimethylamine, 3.3 g (0.0125 mol) of methyl 6-bromo-2-naphthoate, 140 mg of palladium acetate (6.25 × 10 ⁻⁴ mol) , 506 mg (2.5 × 10 ⁻³ mol) of tri-t-butylphosphine and 2.3 g (0.024 mol) of sodium-t-butoxide were dissolved in 25 ml of toluene and heated to reflux for 5 hours. After standing to cool, water was added to terminate the reaction. The organic phase was separated, dried over anhydrous sodium sulfate, and concentrated under reduced pressure. The resulting residue was purified by column chromatography to obtain 2.7 g of compound (1).

Lithium aluminum hydride was suspended in 12 ml of THF, and a solution of 1.8 g (4.3 × 10 ⁻³ mol) of Compound (1) in 20 ml of THF was added dropwise in an ice bath and stirred. After stirring for 4 hours, water and ethyl acetate were added to terminate the reaction. The insoluble matter was filtered off, the organic phase of the filtrate was separated, dried over anhydrous sodium sulfate, and concentrated under reduced pressure to obtain 1.5 g of Compound (2).

Compound ^{(2) 1.5g (3.89 × 10} -3 mol) was dissolved in methylene chloride 20 ml, was added activated manganese dioxide 2.5g (2.87 × ^{10 -2} mol), 1 30 ° C. Stir for hours. After allowing to cool, activated manganese dioxide was filtered off, the filtrate was concentrated under reduced pressure, and the resulting residue was purified by column chromatography to obtain 1.0 g of compound (3).

Compound (3) 130 mg (3.39 × 10 ⁻⁴ mol), rhodanine-3-acetic acid 65 mg (3.39 × 10 ⁻⁴ mol), ammonium acetate 260 mg (3.37 × 10 ⁻³ mol) in 8 ml of acetic acid It melt | dissolved and it heat-stirred at 90 degreeC for 3 hours. After allowing to cool, water was added, the precipitate was collected by filtration, and the resulting residue was purified by column chromatography to obtain 120 mg of exemplary compound A-1. The ¹ HNMR data of the obtained exemplary compound A-1 are shown below.

¹ HNMR (400 MHz, CDCl ₃ ): δ 7.88 (1H, s, ar-H), 7.85 (1H, s, ar-H), 7.66 (1H, d, ar-H), 7. 53 (1H, d, ar-H), 7.42 (1H, d, ar-H), 7.21 (1H, d, ar-H), 7.11 (4H, m, ar-H), _{6.89 (4H, d, ar-} H), 4.94 (2H, s, NCH 2), 3.83 (6H, s, OCH 3).

"semiconductor"
As a semiconductor used for the semiconductor layer according to the present invention, a simple element such as silicon or germanium, an element of Group 3 to Group 5 or Group 13 to Group 15 of the periodic table (also referred to as an element periodic table) is used. The oxide may further include the above metal sulfides, selenides, nitrides, and the like.

  Preferred metal oxides include oxides of titanium, tin, zinc, iron, tungsten, zirconium, hafnium, strontium, indium, cerium, yttrium, lanthanum, vanadium, niobium, or tantalum, which are included in these oxides. Possible compounds include cadmium, zinc, lead, silver, antimony or bismuth sulfide, cadmium or lead selenide, cadmium telluride, phosphide such as zinc, gallium, indium, cadmium, gallium-arsenic or copper -Indium selenide, copper-indium sulfide, titanium nitride, and the like.

Specific examples include TiO ₂ , SnO ₂ , Fe ₂ O ₃ , WO ₃ , ZnO, Nb ₂ O ₅ , CdS, ZnS, PbS, Bi ₂ S ₃ , CdSe, CdTe, GaP, InP, GaAs, CuInS ₂ , CuInSe _2, although _Ti 3 _{N 4} and the like, the _preferably used is _{TiO 2, ZnO, SnO 2,} Fe 2 O 3, WO 3, Nb 2 O 5, CdS, PbS, more preferably used Is TiO ₂ or Nb ₂ O ₅ , among which TiO ₂ is preferably used.

  As a semiconductor used for the semiconductor layer according to the present invention, a simple element such as silicon or germanium, an element of Group 3 to Group 5 or Group 13 to Group 15 of the periodic table (also referred to as an element periodic table) is used. Compounds, metal chalcogenides (eg, oxides, sulfides, selenides, etc.), metal nitrides, and the like can be used.

A plurality of the above-described semiconductors may be used in combination for the oxide semiconductor electrode according to the present invention. For example, 20% by mass of titanium nitride (Ti ₃ N ₄ ) is mixed with a titanium oxide semiconductor, and the oxide semiconductor used for the oxide semiconductor electrode according to the present invention includes a simple substance such as silicon or germanium, a periodic table ( (Also referred to as periodic table of elements) Group 3 to Group 5, Group 13 to Group 15 compounds, metal chalcogenides (eg, oxides, sulfides, selenides, etc.), metal nitrides, etc. Can be used.

  Preferred metal chalcogenides include titanium, tin, zinc, iron, tungsten, zirconium, hafnium, strontium, indium, cerium, yttrium, lanthanum, vanadium, niobium or tantalum oxides, cadmium, zinc, lead, silver, antimony or Bismuth sulfide, cadmium or lead selenide, cadmium telluride and the like. Examples of other semiconductors include phosphides such as zinc, gallium, indium, and cadmium, gallium-arsenic or copper-indium selenides, copper-indium sulfides, and titanium nitrides.

Specific examples include TiO ₂ , SnO ₂ , Fe ₂ O ₃ , WO ₃ , ZnO, Nb ₂ O ₅ , CdS, ZnS, PbS, Bi ₂ S ₃ , CdSe, CdTe, GaP, InP, GaAs, CuInS ₂ , CuInSe ₂ , Ti ₃ N _{4 and the} like can be mentioned, but preferably used are TiO ₂ , ZnO, SnO ₂ , Fe ₂ O ₃ , WO ₃ , Nb ₂ O ₅ , CdS, PbS, and more preferably used. Is TiO ₂ or Nb ₂ O ₅ , among which TiO ₂ is preferably used.

The semiconductor used for the semiconductor layer according to the present invention may be a combination of the above-described semiconductors. For example, several kinds of the metal oxides or metal sulfides described above can be used in combination, or 20% by mass of titanium nitride (Ti ₃ N ₄ ) may be mixed and used in the titanium oxide semiconductor. In addition, J.H. Chem. Soc. , Chem. Commun. 15 (1999). At this time, when a component is added as a semiconductor in addition to the metal oxide or metal sulfide, the mass ratio of the additional component to the metal oxide or metal sulfide semiconductor is preferably 30% or less.

《Sensitivity treatment》
The semiconductor according to the present invention is sensitized by containing the dye represented by the general formula (1), and can achieve the effects described in the present invention. Here, the inclusion of the dye includes various modes such as adsorption onto the semiconductor surface, and when the semiconductor has a porous structure such as a porous structure, the dye enters the porous structure of the semiconductor.

Further, the total content of each dye represented by the general formula (1) per 1 m ² of the semiconductor layer (which may be a semiconductor) is preferably in the range of 0.01 to 100 mmol, more preferably 0.1 to 0.1 mmol. 50 mmol, particularly preferably 0.5 to 20 mmol.

  When the sensitizing treatment is performed using the dye represented by the general formula (1) according to the present invention, the dye may be used alone, or a plurality of the dyes may be used in combination. (1) and other dyes (for example, US Pat. Nos. 4,684,537, 4,927,721, 5,084,365, 5, 350,644, 5,463,057, 5,525,440, JP-A-7-249790, JP-A-2000-150007, etc.) It can also be used as a mixture.

  In particular, when the use of the photoelectric conversion element of the present invention is a solar cell to be described later, two or more types of dyes having different absorption wavelengths are used so that sunlight can be used effectively by widening the wavelength range of photoelectric conversion. It is preferable to mix and use.

  In order to include the dye represented by the general formula (1) in a semiconductor, a method in which the dye is dissolved in an appropriate solvent (such as ethanol) and a well-dried semiconductor is immersed in the solution for a long time is generally used. is there.

  When a plurality of dyes represented by the general formula (1) are used in combination, or in combination with other sensitizing dyes, a mixed solution of each dye may be prepared and used. Alternatively, a solution can be prepared for each dye, and the solution can be prepared by immersing in each solution in turn. When preparing a separate solution for each dye and immersing in each solution in order, the effects described in the present invention can be obtained regardless of the order in which the semiconductor includes the dye or the sensitizing dye. Obtainable. Alternatively, it may be produced by mixing semiconductor fine particles adsorbing the dye alone.

  The adsorption treatment may be performed when the semiconductor is in the form of particles, or may be performed after forming a film on the support. The solution in which the dye used for the adsorption treatment is dissolved may be used at room temperature, or may be used by heating in a temperature range where the dye does not decompose and the solution does not boil. Moreover, you may implement adsorption | suction of the said pigment | dye after application | coating of semiconductor fine particles like manufacture of the photoelectric conversion element mentioned later. Moreover, you may implement adsorption | suction of the said pigment | dye by apply | coating the semiconductor fine particle and the said pigment | dye concerning this invention simultaneously. Unadsorbed pigment can be removed by washing.

  In addition, the semiconductor sensitization treatment according to the present invention is performed by including the dye represented by the general formula (1) in the semiconductor. The details of the sensitization treatment will be described later. The conversion element will be described in detail.

  In the case of a semiconductor having a semiconductor thin film with a high porosity, adsorption of the dye, sensitizing dye, etc. before water adsorbs on the semiconductor thin film due to moisture, water vapor, etc. The treatment (semiconductor sensitization treatment) is preferably completed.

  The semiconductor according to the present invention may be surface-treated using an organic base. Examples of the organic base include diarylamine, triarylamine, pyridine, 4-t-butylpyridine, polyvinylpyridine, quinoline, piperidine, and amidine, among which pyridine, 4-t-butylpyridine, and polyvinylpyridine are preferable. .

  When the organic base is a liquid, the surface treatment can be carried out by preparing a solution dissolved in an organic solvent and immersing the semiconductor according to the present invention in a liquid amine or an amine solution.

  As the dye that can be used in combination with the dye represented by the general formula (1), any dye can be used as long as it can spectrally sensitize the semiconductor according to the present invention. In order to widen the wavelength range of photoelectric conversion as much as possible and increase the conversion efficiency, it is preferable to mix two or more kinds of dyes. Moreover, the pigment | dye mixed and the ratio can be selected so that it may match with the wavelength range and intensity distribution of the target light source.

  Among the dyes used in combination, metal complex dyes, phthalocyanine dyes, porphyrin dyes, and polymethine dyes are preferably used from the comprehensive viewpoints such as photoelectron transfer reaction activity, light durability, and photochemical stability.

[Photoelectric conversion element]
The photoelectric conversion element of the present invention is formed by arranging a semiconductor layer formed by adsorbing a dye on a semiconductor on a conductive support and a counter electrode so as to face each other via a charge transport layer. Hereinafter, the semiconductor layer, the charge transport layer, and the counter electrode will be described.

<Semiconductor layer>
A method for manufacturing a semiconductor layer according to the present invention will be described.

  As one mode of the semiconductor layer according to the present invention, a method of forming the above-mentioned semiconductor by baking on a conductive support can be mentioned.

  When the semiconductor according to the present invention is produced by firing, the semiconductor sensitization (adsorption, penetration into a porous layer, etc.) treatment using the above dye or sensitizing dye may be carried out after firing. preferable. It is particularly preferable to perform the dye adsorption treatment quickly after the firing and before the water is adsorbed to the semiconductor.

  When the semiconductor according to the present invention is in the form of particles, the semiconductor layer is preferably manufactured by coating or spraying the semiconductor on a conductive support. In the case where the semiconductor according to the present invention is in a film form and is not held on the conductive support, it is preferable to produce a semiconductor layer by bonding the semiconductor onto the conductive support.

(Conductive support)
The conductive support used in the photoelectric conversion element of the present invention and the solar battery of the present invention is provided with a conductive material such as a conductive material such as a metal plate or a non-conductive material such as a glass plate or a plastic film. A structure having a different structure can be used. Examples of materials used for the conductive support include metals (for example, platinum, gold, silver, copper, aluminum, rhodium, indium) or conductive metal oxides (for example, indium-tin composite oxide, fluorine for tin oxide) And carbon). The thickness of the conductive support is not particularly limited, but is preferably 0.3 to 5 mm.

  Further, the conductive support is preferably substantially transparent, and substantially transparent means that the light transmittance is 10% or more, and more preferably 50% or more, Most preferably, it is 80% or more. In order to obtain a transparent conductive support, it is preferable to provide a conductive layer made of a conductive metal oxide on the surface of a glass plate or a plastic film. When a transparent conductive support is used, light is preferably incident from the support side.

The conductive support preferably has a surface resistance of 50 Ω / cm ² or less, more preferably 10 Ω / cm ² or less.

(Preparation of coating liquid containing semiconductor fine powder)
First, a coating solution containing fine semiconductor powder is prepared. The finer the primary particle diameter of the semiconductor fine powder, the better. The primary particle diameter is preferably 1 to 5000 nm, more preferably 2 to 50 nm. The coating liquid containing the semiconductor fine powder can be prepared by dispersing the semiconductor fine powder in a solvent. The semiconductor fine powder dispersed in the solvent is dispersed in the form of primary particles. The solvent is not particularly limited as long as it can disperse the semiconductor fine powder.

  Examples of the solvent include water, an organic solvent, and a mixed solution of water and an organic solvent. As the organic solvent, alcohols such as methanol and ethanol, ketones such as methyl ethyl ketone, acetone and acetyl acetone, hydrocarbons such as hexane and cyclohexane, and the like are used. A surfactant and a viscosity modifier (polyhydric alcohol such as polyethylene glycol) can be added to the coating solution as necessary. The range of the semiconductor fine powder concentration in the solvent is preferably 0.1 to 70% by mass, and more preferably 0.1 to 30% by mass.

(Application of coating solution containing fine semiconductor powder and baking treatment of the formed semiconductor layer)
The semiconductor fine powder-containing coating solution obtained as described above is applied or sprayed onto a conductive support, dried, etc., and then baked in air or an inert gas to provide a conductive support. A semiconductor layer (semiconductor film) is formed thereon.

  The film obtained by applying and drying the coating liquid on the conductive support is composed of an aggregate of semiconductor fine particles, and the particle size of the fine particles corresponds to the primary particle size of the semiconductor fine powder used. is there.

  Since the semiconductor fine particle aggregate film formed on the substrate such as the conductive support in this way has a low bonding strength with the conductive support or between the fine particles and a low mechanical strength. The semiconductor fine particle aggregate film is preferably fired to increase the mechanical strength and form a fired product film that is firmly fixed to the substrate.

  In the present invention, the fired product film may have any structure, but is preferably a porous structure film (also referred to as a porous layer having voids).

  Here, the porosity of the semiconductor thin film according to the present invention is preferably 10% by volume or less, more preferably 8% by volume or less, and particularly preferably 0.01 to 5% by volume or less. The porosity of the semiconductor thin film means a porosity that is penetrable in the thickness direction of the dielectric, and can be measured using a commercially available apparatus such as a mercury porosimeter (Shimadzu Polarizer 9220 type).

  The film thickness of the semiconductor layer formed into a fired product film having a porous structure is preferably at least 10 nm or more, more preferably 100 to 10,000 nm.

  From the viewpoint of appropriately preparing the actual surface area of the fired product film during the firing treatment and obtaining a fired product film having the above porosity, the firing temperature is preferably lower than 1000 ° C, more preferably in the range of 200 to 800 ° C. Especially preferably, it is the range of 300-800 degreeC.

  The ratio of the actual surface area to the apparent surface area can be controlled by the particle size, specific surface area, firing temperature, etc. of the semiconductor fine particles. In addition, for the purpose of increasing the surface area of the semiconductor particles after heating, increasing the purity in the vicinity of the semiconductor particles, and increasing the efficiency of electron injection from the dye into the semiconductor particles, for example, chemical plating using a titanium tetrachloride aqueous solution or three An electrochemical plating process using a titanium chloride aqueous solution may be performed.

(Semiconductor sensitization treatment)
The semiconductor sensitization treatment is carried out by dissolving the dye in an appropriate solvent as described above and immersing the substrate on which the semiconductor is baked in the solution. In that case, a substrate in which a semiconductor layer (also referred to as a semiconductor film) is formed by baking is subjected to pressure reduction treatment or heat treatment in advance to remove bubbles in the film, and is represented by the general formula (1). It is preferable to allow the dye to enter deep inside the semiconductor layer (semiconductor film), and it is particularly preferable when the semiconductor layer (semiconductor film) is a porous structure film.

  The solvent used for dissolving the dye represented by the general formula (1) is not particularly limited as long as it can dissolve the dye and does not dissolve the semiconductor or react with the semiconductor. Although there is no limitation, it is preferable to deaerate and purify in advance in order to prevent moisture and gas dissolved in the solvent from entering the semiconductor film and hindering sensitizing treatment such as adsorption of the dye. .

  Solvents preferably used in dissolving the dye include alcohol solvents such as methanol, ethanol and n-propanol, ketone solvents such as acetone and methyl ethyl ketone, ether ethers such as diethyl ether, diisopropyl ether, tetrahydrofuran and 1,4-dioxane. Solvents and halogenated hydrocarbon solvents such as methylene chloride and 1,1,2-trichloroethane, particularly preferably methanol, ethanol, acetone, methyl ethyl ketone, tetrahydrofuran and methylene chloride.

(Tensing temperature and time)
The time for immersing the substrate on which the semiconductor is baked in the solution containing the dye represented by the general formula (1) is such that the dye penetrates deeply into the semiconductor layer (semiconductor film) to sufficiently advance adsorption and the like. From the viewpoint of sufficiently sensitizing and inhibiting the decomposition product from being generated by decomposition of the dye in the solution and hindering the adsorption of the dye, it is preferably 3 to 48 hours under 25 ° C., more preferably 4 to 24 hours. This effect is particularly remarkable when the semiconductor film is a porous structure film. However, the immersion time is a value at 25 ° C., and is not limited to the above when the temperature condition is changed.

  In soaking, the solution containing the dye represented by the general formula (1) may be heated to a temperature at which it does not boil as long as the dye does not decompose. The preferred temperature range is 10 to 100 ° C., more preferably 25 to 80 ° C., but this is not the case when the solvent boils in the temperature range as described above.

<Charge transport layer>
The charge transport layer used in the present invention will be described.

A redox electrolyte is preferably used for the charge transport layer. Here, examples of the redox electrolyte include I ⁻ / I ₃ ⁻ system, Br ⁻ / Br ₃ ⁻ system, and quinone / hydroquinone system. Such redox electrolyte can be obtained by a conventionally known method, for example, I ^- / I ₃ ^- system electrolyte can be obtained by mixing an ammonium salt of iodine and iodine. The charge transport layer is composed of dispersions of these redox electrolytes. These dispersions are liquid electrolytes when they are in solution, and are dispersed in solid polymer electrolytes and gel substances when dispersed in polymers that are solid at room temperature. When called, it is called a gel electrolyte. When a liquid electrolyte is used as the charge transport layer, an electrochemically inert solvent is used as the solvent, for example, acetonitrile, propylene carbonate, ethylene carbonate, or the like is used. Examples of the solid polymer electrolyte include the electrolyte described in JP-A No. 2001-160427, and examples of the gel electrolyte include the electrolyte described in “Surface Science” Vol. 21, No. 5, pages 288 to 293.

《Counter electrode》
The counter electrode used in the present invention will be described.

The counter electrode as long as it has conductivity, but any conductive material is used, I ₃ ^- a reduction reaction of oxidation and other redox ions such as ions have a catalytic ability to perform fast enough Is preferably used. Examples of such a material include a platinum electrode, a surface of the conductive material subjected to platinum plating or platinum deposition, rhodium metal, ruthenium metal, ruthenium oxide, and carbon.

[Solar cell]
The solar cell of the present invention will be described.

  The solar cell of the present invention has a structure in which the optimum design and circuit design for sunlight are performed as one aspect of the photoelectric conversion element of the present invention, and the optimum photoelectric conversion is performed when sunlight is used as a light source. Have. That is, the semiconductor is dye-sensitized and can be irradiated with sunlight. When configuring the solar cell of the present invention, it is preferable that the semiconductor layer, the charge transport layer, and the counter electrode are housed in a case and sealed, or the whole is resin-sealed.

  When the solar cell of the present invention is irradiated with sunlight or an electromagnetic wave equivalent to sunlight, the dye according to the present invention adsorbed on the semiconductor is excited by absorbing the irradiated light or electromagnetic wave. The electrons generated by the excitation move to the semiconductor, and then move to the counter electrode via the conductive support to reduce the redox electrolyte of the charge transport layer. On the other hand, the dye according to the present invention in which electrons are transferred to the semiconductor is an oxidant, but is reduced by the supply of electrons from the counter electrode via the redox electrolyte of the charge transport layer, thereby returning to the original state. At the same time, the redox electrolyte of the charge transport layer is oxidized and returned to a state where it can be reduced again by the electrons supplied from the counter electrode. In this way, electrons flow, and a solar cell using the photoelectric conversion element of the present invention can be configured.

  EXAMPLES Hereinafter, although an Example demonstrates this invention, this invention is not limited to these.

Example 1
<< Production of photoelectric conversion element >>
A photoelectric conversion element was produced according to the procedure described below.

<Production of liquid electrolyte cell>
Production of photoelectric conversion element SC-1 (present invention)
A commercially available titanium oxide paste (particle size 18 nm) was applied to a fluorine-doped tin oxide (FTO) conductive glass substrate by a screen printing method. The paste was dried by heating at 100 ° C. for 10 minutes and then baked at 500 ° C. for 30 minutes to obtain a titanium oxide thin film having a thickness of 8 μm.

Exemplified Compound A-1 was dissolved in ethanol to prepare a solution of 3 × 10 ⁻⁴ mol / l. An FTO glass substrate coated with titanium oxide was immersed in this solution at 40 ° C. for 3 hours to perform a dye adsorption treatment, then washed with ethanol and vacuum dried to obtain a photoelectric conversion electrode.

  As the electrolytic solution, a 3-methylpropionitrile solution containing 0.4 mol / l lithium iodide, 0.05 mol / l iodine, and 0.5 mol / l 4- (t-butyl) pyridine was used.

  A platinum plate was used as a counter electrode, and a photoelectric conversion element (solar cell) SC-1 was obtained by assembling the photoelectric conversion electrode and the electrolyte solution and the clamp cell prepared earlier.

Production of SC-2 to SC-9 In production of the photoelectric conversion element SC-1, Exemplified Compound A-1 was converted to Exemplified Compounds A-2, A-4, A-9, A-10, A-12, A-15. The photoelectric conversion elements SC-2, SC-3, SC-4, SC-5, SC-6, SC-7, SC-8, SC- are the same except that they are changed to A-20, A-28. 9 was obtained.

Production of photoelectric conversion elements SC-R1 and SC-R2 (comparative example)
In the above photoelectric conversion element production, photoelectric conversion elements SC-R1 and SC-R2 were produced in the same manner except that the exemplary compounds were changed to the following R-1 and R-2.

<Preparation of solid electrolyte cell>
Production of photoelectric conversion element SE-R1 (comparative example)
An alkoxy titanium solution (Matsumoto Kosho: TA-25 / IPA dilution) was applied to the FTO electrode by spin coating. After standing at room temperature for 30 minutes, intermediate baking was performed at 450 ° C. to obtain a short-circuit prevention layer. Subsequently, a commercially available titanium oxide paste (particle size: 18 nm) was applied to the base plate by the doctor blade method, followed by heat treatment at 60 ° C. for 10 minutes, followed by baking at 500 ° C. for 30 minutes, and a titanium oxide having a thickness of 5 μm. A semiconductor layer substrate with a thin film was obtained.

R-1 (Ru complex) was dissolved in ethanol to prepare a 3 × 10 ⁻⁴ mol / l solution. The semiconductor layer substrate was immersed in this solution at room temperature for 16 hours to perform a dye adsorption treatment, then washed with chloroform and vacuum-dried to obtain a photoelectric conversion electrode.

Next, in a toluene solvent, 0.17 mol / l of an exemplary compound (spiro-MeO TAD below) as a hole transporting agent, 0.33 mmol / l of N (PhBr) ₃ SbCl ₆ as a hole doping agent, Li [ (CF ₃ SO ₂ ) ₂ N] was dissolved at 15 mmol / l, and spin-coated on the photoelectric conversion electrode after dye adsorption to form a hole transport layer. Furthermore, gold was deposited to 30 nm by a vacuum deposition method to produce a counter electrode, thereby obtaining a photoelectric conversion element SE-R1.

Production of photoelectric conversion element SE-1 (present invention)
Photoelectric conversion element SE-1 was obtained in the same manner except that R-1 (Ru complex) in production of photoelectric conversion element SE-R1 was changed to exemplary compound A-1.

[Evaluation of power generation characteristics]
Photoelectric conversion characteristics were measured under conditions where a 5 × 5 mm ² mask was applied to the semiconductor layer under irradiation of a xenon lamp having an intensity of 100 mW / cm ² .

  About eight types of photoelectric conversion elements obtained as described above, current-voltage characteristics were measured at room temperature using an IV tester, and a short circuit current (Jsc), an open circuit voltage (Voc), and a shape factor ( FF) and the conversion efficiency (η (%)) (photoelectric conversion efficiency) was determined from these. In addition, the conversion efficiency ((eta) (%)) of the photoelectric conversion element was computed based on the following formula (A).

η = 100 × (Voc × Jsc × FF) / P (A)
Here, P is the incident light intensity [mW / cm ⁻² ], Voc is the open circuit voltage [V], Jsc is the short circuit current density [mA · cm ⁻² ], F. Indicates a form factor.

Furthermore, the semiconductor layer was irradiated with light with a xenon lamp having an intensity of 100 mW / cm ² for 30 minutes, and then the change in photoelectric conversion characteristics after exposure for 20 minutes in a 9 ppm ozone atmosphere was compared.

  Table 1 shows the result of characteristic evaluation when the photoelectric conversion electrode was used before and after the light irradiation / ozone exposure deterioration operation.

  As shown in Table 1, from the ratio of photoelectric conversion efficiency before and after degradation of light irradiation / ozone exposure, the dye of the present invention uses comparative dyes (R-1: Ru complex and R-2: triphenylamine system). Compared to the sample, the oxidation resistance was significantly higher, and it was found that introduction of a naphthalene structure into the triarylamine matrix was effective as a guide for obtaining a highly durable sensitizing dye.

Claims (8)

A photoelectric conversion element comprising a compound represented by the following general formula (1) between counter electrodes.

(Wherein Q _{1 to} Q ₁₆ are each independently a hydrogen atom, a halogen atom, a nitro group, a cyano group, a hydroxyl group, a carboxyl group, a thiol group, an optionally substituted alkyl group, an alkenyl group, an alkynyl group, an alkoxy group, Represents a thioalkyl group, an amino group, an aromatic hydrocarbon group, or a heterocyclic group, and P _{1 to} P ₃ are each independently a hydrogen atom, a halogen atom, a nitro group, a cyano group, a hydroxyl group, a carboxyl group, a thiol group, or a substituted group. alkyl group which may, alkenyl group, alkynyl group, alkoxy group, thioalkyl group, an amino group, at least one electron-withdrawing group of .P ₁ to P ₃ representing an aromatic hydrocarbon group, or a heterocyclic group Q _{1 to} Q ₁₆ and P _{1 to} P ₃ may form a cyclic structure directly or via another bonding atom. (The double bond may be either a cis form or a trans form.) 2. The photoelectric conversion device according to claim 1, wherein the compound represented by the general formula (1) is a compound represented by the following general formula (2).

(In the formula, Q _{1 to} Q ₆ , Q _{7 to} Q ₈ , Q _{10 to} Q ₁₁ , Q _{12 to} Q ₁₃ , Q _{15 to} Q ₁₆ , and P _{1 to} P ₃ are represented by the general formula (1). Q _{1 to} Q ₆ , Q _{7 to} Q ₈ , Q _{10 to} Q ₁₁ , Q _{12 to} Q ₁₃ , Q _{15 to} Q ₁₆ , and P _{1 to} P _{3 of the} compound having the same meaning as Q ₁₇ and Q ₃ are represented. ₁₈ each independently represents a hydrogen atom, an optionally substituted aromatic hydrocarbon group, or a heterocyclic group, and R ₁ and R ₂ each independently represents a hydrogen atom, a halogen atom, a nitro group, a cyano group, or a hydroxyl group. , A carboxyl group, a thiol group, an optionally substituted alkyl group, an alkenyl group, an alkynyl group, an alkoxy group, a thioalkyl group, an amino group, an aromatic hydrocarbon group, or a heterocyclic group, and n1 and n2 are each 0. Or 1) 2. The photoelectric conversion element according to claim 1, wherein the compound represented by the general formula (1) is a compound represented by the following general formula (3).

_(Wherein, Q 1 _{to Q 16} and _{P 1} represents _Q 1 _{to Q 16} and _{P 1} group having the same meaning of the compound represented by the general formula (1), _{R 3} and _{R 4} are each independently A hydrogen atom, a halogen atom, a nitro group, a cyano group, a hydroxyl group, a carboxyl group, a thiol group, an optionally substituted alkyl group, an alkenyl group, an alkynyl group, an alkoxy group, a thioalkyl group, an amino group, an aromatic hydrocarbon group, or Represents a heterocyclic group.)   The compound represented by said general formula (1)-(3) has a carboxyl group, The photoelectric conversion element of any one of Claims 1-3 characterized by the above-mentioned.   The compound represented by said general formula (1)-(3) has a cyano group, The photoelectric conversion element of any one of Claims 1-3 characterized by the above-mentioned.   In the photoelectric conversion element in which at least a semiconductor layer and a charge transport layer are provided between the counter electrodes, the semiconductor layer contains at least one selected from the compounds represented by the general formulas (1) to (3). The photoelectric conversion element according to any one of claims 1 to 5, wherein   The photoelectric conversion element according to claim 1, wherein the semiconductor forming the semiconductor layer is titanium oxide.   It has a photoelectric conversion element of any one of Claims 1-7, The solar cell characterized by the above-mentioned.