JP2010251008A - Plasma generating device - Google Patents

Plasma generating device Download PDF

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Publication number
JP2010251008A
JP2010251008A JP2009097044A JP2009097044A JP2010251008A JP 2010251008 A JP2010251008 A JP 2010251008A JP 2009097044 A JP2009097044 A JP 2009097044A JP 2009097044 A JP2009097044 A JP 2009097044A JP 2010251008 A JP2010251008 A JP 2010251008A
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electrode
cylindrical
chuck
rod
plasma
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JP4957746B2 (en
Inventor
Akinosuke Tera
亮之介 寺
Tadao Nishijima
忠夫 西島
Takashi Kuzuoka
崇 葛岡
Daisuke Itomura
大輔 糸村
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Denso Corp
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Denso Corp
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Priority to DE102010016301.5A priority patent/DE102010016301B4/en
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/48—Generating plasma using an arc
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/26—Plasma torches
    • H05H1/32—Plasma torches using an arc
    • H05H1/34—Details, e.g. electrodes, nozzles
    • H05H1/3405—Arrangements for stabilising or constricting the arc, e.g. by an additional gas flow

Abstract

<P>PROBLEM TO BE SOLVED: To provide a plasma generating device which performs plasma discharge at a fixed inter-electrode distance. <P>SOLUTION: The plasma generating device includes a cylindrical chamber with a cylindrical electrode, an electrode correction ring capable of freely moving on inner peripheral surfaces of a bar-shaped electrode and the cylindrical electrode, and a chuck mounted on a base. In the device, the chuck can grip a lower end of the bar-shaped electrode at a point contact, a tapered positioning hole is arranged at the center of the electrode correction ring, and the cylindrical chamber is formed to move up and down so as to make the center axis of the cylindrical electrode coincide with the center axis of the chuck. When the cylindrical chamber descends while the electrode correction ring is positioned at a designated position on the inner peripheral surface of the cylindrical electrode, plasma discharge is carried out by fixing the inter-electrode distance wherein the bar-shaped electrode is position-corrected so as to mount on the center axis of the cylindrical electrode by the tapered positioning hole of the electrode correction ring. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

本発明は、異常放電を抑制して安定したプラズマ放電を行うプラズマ発生装置に関する。   The present invention relates to a plasma generator that performs stable plasma discharge while suppressing abnormal discharge.

従来から、プラズマは反応活性な状態のため、表面処理、薄膜形成、エッチングなどに広く利用されている。より高速処理を行うためには、プラズマ密度を高くして反応活性種を増やす必要がある。プラズマ密度を高くするには、印加する電界を高電界化したり、ガス濃度を増加させ反応活性種を増加させる必要がある。電界を高電界化するには、印加する電圧を増加させたり、電極間距離を小さくすれば良い。しかしながら、電極間距離を小さくすると、アーク放電と呼ばれる異常放電が発生し、発生したジュール熱により電極や基材を損傷したり、形成した薄膜に欠陥を発生させるという問題があった。
特許文献１、２にみられるように、二重管電極構造で均一電界にする試みがなされているが、処理装置全体が複雑な構造となっていた。また、特許文献３に示すものは、プラズマ発生ノズルからプラズマ化したガスを放射する方式であり、プラズマ密度を均一にする上で問題があった。 Conventionally, since plasma is in a reactive state, it has been widely used for surface treatment, thin film formation, etching, and the like. In order to perform higher-speed processing, it is necessary to increase the plasma active density and increase reactive species. In order to increase the plasma density, it is necessary to increase the reactive electric species by increasing the electric field applied or increasing the gas concentration. In order to increase the electric field, the applied voltage may be increased or the distance between the electrodes may be reduced. However, when the distance between the electrodes is reduced, abnormal discharge called arc discharge occurs, and there is a problem that the generated Joule heat damages the electrodes and the base material, or causes defects in the formed thin film.
As seen in Patent Documents 1 and 2, attempts have been made to create a uniform electric field with a double tube electrode structure, but the entire processing apparatus has a complicated structure. Moreover, what is shown in patent document 3 is a system which radiates | emits plasma-ized gas from a plasma generation nozzle, and had a problem in making a plasma density uniform.

特開２００１−２３９７２号公報JP 2001-23972 A 特開２００７−２３４２９７号公報JP 2007-234297 A 特開２００８−３００２８３号公報JP 2008-300283 A

本発明は、上記問題に鑑み、異常放電を抑制して安定したプラズマ放電を行うプラズマ発生装置を提供するものである。   In view of the above problems, the present invention provides a plasma generator that performs stable plasma discharge while suppressing abnormal discharge.

上記課題を解決するために、請求項１の発明は、円筒形電極（１０）を有する円筒チェンバー部と、棒状電極（１）と、前記円筒形電極（１０）の内周面を移動自在な電極補正リング（１１）と、ベース（１５）に設置されたチャック部（２０、３０、４０）とを具備するプラズマ発生装置において、前記チャック部（２０、３０、４０）は、棒状電極（１）の下端部を点接触して把持させることができ、前記電極補正リング（１１）の中央部には、テーパ状の位置決め孔（１８）が設けられており、前記円筒形電極（１０）の中心軸が、前記チャック部（２０、３０、４０）の中心軸と一致するように、前記円筒チェンバー部は上下動可能に構成され、前記電極補正リング（１１）が、前記円筒形電極（１０）の内周面の所定位置に位置決めされた状態で、前記円筒チェンバー部が下降すると、前記電極補正リング（１１）のテーパ状の位置決め孔（１８）によって、前記棒状電極（１）が前記円筒形電極（１０）の中心軸に設置されるように位置補正されるようにした、電極間距離を一定にしてプラズマ放電を行うプラズマ発生装置である。   In order to solve the above problems, the invention of claim 1 is characterized in that a cylindrical chamber portion having a cylindrical electrode (10), a rod-shaped electrode (1), and an inner peripheral surface of the cylindrical electrode (10) are movable. In the plasma generator comprising an electrode correction ring (11) and a chuck part (20, 30, 40) installed on a base (15), the chuck part (20, 30, 40) is a rod-shaped electrode (1). The lower end portion of the cylindrical electrode (10) is provided with a tapered positioning hole (18) at the center of the electrode correction ring (11). The cylindrical chamber portion is configured to be movable up and down so that the central axis coincides with the central axis of the chuck portion (20, 30, 40), and the electrode correction ring (11) is configured to move the cylindrical electrode (10). ) Positioned at a predetermined position on the inner peripheral surface In this state, when the cylindrical chamber part is lowered, the rod-shaped electrode (1) is installed on the central axis of the cylindrical electrode (10) by the tapered positioning hole (18) of the electrode correction ring (11). This is a plasma generating apparatus that performs plasma discharge with a constant distance between electrodes that is position-corrected as described above.

これにより、棒状電極を簡単に設置できて、電極間距離が一定に保たれ、異常放電を誘発する電界集中をなくし、均一な電界を印加することによって異常放電を抑制することができる。   Accordingly, the rod-shaped electrodes can be easily installed, the distance between the electrodes is kept constant, the electric field concentration that induces abnormal discharge is eliminated, and abnormal discharge can be suppressed by applying a uniform electric field.

請求項２の発明は、請求項１の発明において、前記チャック部（３０）が、コレットチャックであることを特徴とする。   The invention of claim 2 is characterized in that, in the invention of claim 1, the chuck portion (30) is a collet chuck.

請求項３の発明は、請求項１の発明において、前記チャック部（４０）が、ダイヤフラムチャックであることを特徴とする。   The invention of claim 3 is the invention of claim 1, wherein the chuck portion (40) is a diaphragm chuck.

請求項４の発明は、請求項１の発明において、前記チャック部（４０）の作動が流体圧で行われることを特徴とする。   The invention of claim 4 is characterized in that, in the invention of claim 1, the operation of the chuck portion (40) is performed by fluid pressure.

請求項５の発明は、請求項１から４のいずれか１項記載の発明において、前記棒状電極（１）の外周面と前記円筒形電極（１０）の内周面との電極間距離が、５ｍｍ以下であることを特徴とする。これにより、電極間距離を小さくすることによって発生頻度が高くなる異常放電が抑制されて、安定したプラズマ放電が得られ、しかも、高速処理が行える。   According to a fifth aspect of the present invention, in the invention according to any one of the first to fourth aspects, the interelectrode distance between the outer peripheral surface of the rod-like electrode (1) and the inner peripheral surface of the cylindrical electrode (10) is: It is 5 mm or less. Thereby, the abnormal discharge whose frequency of occurrence increases by reducing the distance between the electrodes is suppressed, a stable plasma discharge can be obtained, and high-speed processing can be performed.

請求項６の発明は、請求項１から５のいずれか１項記載の発明において、プラズマＣＶＤ処理により円筒形電極内面に皮膜を形成することを特徴とする。   The invention of claim 6 is characterized in that in the invention of any one of claims 1 to 5, a film is formed on the inner surface of the cylindrical electrode by plasma CVD.

請求項７の発明は、請求項１から５のいずれか１項記載の発明において、プラズマＣＶＤ処理により棒状電極表面に皮膜を形成することを特徴とする。   The invention of claim 7 is characterized in that in the invention of any one of claims 1 to 5, a film is formed on the surface of the rod-shaped electrode by plasma CVD treatment.

なお、上記に付した符号は、後述する実施形態に記載の具体的実施態様との対応関係を示す一例である。   In addition, the code | symbol attached | subjected above is an example which shows a corresponding relationship with the specific embodiment as described in embodiment mentioned later.

本発明の一実施形態を示す概要図である。It is a schematic diagram showing one embodiment of the present invention. チャックの構造を示す部分図である。It is a fragmentary figure which shows the structure of a chuck | zipper. チャックの構造の別の実施形態を示す部分図である。It is a fragmentary view which shows another embodiment of the structure of a chuck | zipper. チャックの構造の別の実施形態を示す部分図である。It is a fragmentary view which shows another embodiment of the structure of a chuck | zipper.

以下、図面を参照して、本発明の一実施形態を説明する。各実施態様について、同一構成の部分には、同一の符号を付してその説明を省略する。
本発明の一実施形態においては、被処理対象として、例えば、噴射弁のニードルや、型の押出ピンなどの円柱形状体に、プラズマ発生装置により、表面処理（汚染除去、改質）、薄膜形成、エッチングなどの処理を施す場合について説明する。被処理対象は上記例示に限定されるものではなく、円柱形状体、円筒形状体であれば本発明が適用可能である。 Hereinafter, an embodiment of the present invention will be described with reference to the drawings. About each embodiment, the same code | symbol is attached | subjected to the part of the same structure, and the description is abbreviate | omitted.
In one embodiment of the present invention, as a processing target, for example, a cylindrical body such as a needle of an injection valve or an extrusion pin of a mold is subjected to surface treatment (contamination removal, modification), thin film formation by a plasma generator. A case where a process such as etching is performed will be described. The object to be processed is not limited to the above example, and the present invention can be applied to any columnar body or cylindrical body.

図１は、本発明の一実施形態を示す概要図である。図２は、チャックの構造を示す部分図である。図３、図４は、チャックの構造の別の実施形態を示す部分図である。
棒状電極１の外周面が、本実施形態において、被処理対象である。棒状電極１に対して、円筒形電極１０との間に電界を印加してプラズマ発生させる。円筒チェンバー部は、円筒形電極１０が内部に設けられており、鍔部１７を有している。円筒チェンバー部は、上下方向に移動可能となっており、鍔部１７がベース１５に密着して、円筒チェンバーが形成される。 FIG. 1 is a schematic diagram showing an embodiment of the present invention. FIG. 2 is a partial view showing the structure of the chuck. 3 and 4 are partial views showing another embodiment of the structure of the chuck.
In this embodiment, the outer peripheral surface of the rod-shaped electrode 1 is an object to be processed. An electric field is applied between the rod-shaped electrode 1 and the cylindrical electrode 10 to generate plasma. The cylindrical chamber portion has a cylindrical electrode 10 provided therein and has a flange portion 17. The cylindrical chamber portion is movable in the vertical direction, and the flange portion 17 is in close contact with the base 15 to form a cylindrical chamber.

円筒形電極１０内には、絶縁性材料で作られた電極補正リング１１が上下動可能に嵌合している。電極補正リング１１は、移動用ロッド１６で上下動する。電極補正リング１１には中央にテーパ状の位置決め孔１８が設けられている。一例として、孔径５ｍｍ程度のＡｌ2Ｏ3製で、円筒形電極１０の内径１５ｍｍ程度である。 An electrode correction ring 11 made of an insulating material is fitted in the cylindrical electrode 10 so as to be movable up and down. The electrode correction ring 11 moves up and down by a moving rod 16. The electrode correction ring 11 is provided with a tapered positioning hole 18 at the center. As an example, it is made of Al 2 O 3 having a hole diameter of about 5 mm, and the inner diameter of the cylindrical electrode 10 is about 15 mm.

円筒チェンバー部が下降してベース１５にかぶせるように設置されると、円筒形電極１０の所定位置で停留していた電極補正リング１１の位置決め孔１８が、棒状電極１の上端部をガイドして、棒状電極１と円筒形電極１０とを、それぞれの軸心が一致するように位置決めさせる。電極補正リング１１の中央部に明けられたテーパ状の位置決め孔１８によって、棒状電極１が、円筒形電極内部の中央に設置されるように位置補正されるようになっている。
円筒形電極１０の内部は、棒状電極１との間で電界が印加されてプラズマが発生する円筒チャンバーを構成している。円筒形電極１０の上部端には、排気部１３が設けられており、上部には整流板１２が設置されている。 When the cylindrical chamber portion is installed so as to fall and cover the base 15, the positioning hole 18 of the electrode correction ring 11 that is stopped at a predetermined position of the cylindrical electrode 10 guides the upper end portion of the rod-shaped electrode 1. The rod-shaped electrode 1 and the cylindrical electrode 10 are positioned so that their axial centers coincide. The position of the rod-shaped electrode 1 is corrected by a tapered positioning hole 18 opened in the center of the electrode correction ring 11 so that the rod-shaped electrode 1 is installed in the center of the cylindrical electrode.
The inside of the cylindrical electrode 10 constitutes a cylindrical chamber in which an electric field is applied between the cylindrical electrode 10 and plasma is generated. An exhaust part 13 is provided at the upper end of the cylindrical electrode 10, and a rectifying plate 12 is provided at the upper part.

ベース１５の凹部１８にはパワーチャック２０が設置されている。パワーチャック２０には、円錐状の爪２１が１２０度隔てて３個設置されている。円錐状の爪２１はシリンダ圧やバネ圧で棒状電極１の下端部を把持する。爪２１は円錐状に限らず、角錐であってもよく、要は先端部が尖っていれば良い。棒状電極１はチャックを通じて電源と接続している。なお、これに限らず、棒状電極１の上部から電源とコネクターで接続させても良い。
パワーチャック２０の中心は、円筒形電極１０の内面の軸心と一致するようになっている。この軸心を中心に、ガス導入部１４（長孔）が複数個放射状に設けられている。 A power chuck 20 is installed in the recess 18 of the base 15. Three conical claws 21 are installed on the power chuck 20 at 120 degrees apart. The conical claw 21 grips the lower end portion of the rod-shaped electrode 1 with cylinder pressure or spring pressure. The nail | claw 21 is not restricted to a cone shape, A pyramid may be sufficient, and the tip part should just be sharp. The rod-shaped electrode 1 is connected to a power source through a chuck. However, the present invention is not limited to this, and a power source and a connector may be connected from the top of the rod-shaped electrode 1.
The center of the power chuck 20 coincides with the axial center of the inner surface of the cylindrical electrode 10. A plurality of gas introduction portions 14 (long holes) are provided radially around this axis.

パワーチャック２０の中心軸に円筒形電極１０の内面の中心軸は一致するように、円筒チェンバー部とともに、円筒形電極１０は上下に移動する。円筒チェンバー部の鍔部１７がベース１５に密着した後、円筒形電極１０の内部は、棒状電極１との間で電界が印加されてプラズマが発生する円筒チャンバーが構成される。円筒チェンバー部の鍔部１７とベース１５とは、内部圧に応じてクランプで接合する。   The cylindrical electrode 10 moves up and down together with the cylindrical chamber portion so that the central axis of the inner surface of the cylindrical electrode 10 coincides with the central axis of the power chuck 20. After the flange portion 17 of the cylindrical chamber portion is in close contact with the base 15, the cylindrical electrode 10 forms a cylindrical chamber in which an electric field is applied to the rod-shaped electrode 1 to generate plasma. The flange portion 17 of the cylindrical chamber portion and the base 15 are joined by a clamp according to the internal pressure.

円錐状の爪２１は、流体圧で作動されて、棒状電極１の下端部を点接触して把持している。（把持の際はつるまきバネで押圧して、爪を開放する際には流体圧を用いるようにしても良い。）
このため、棒状電極１が、仮に円筒形電極１０の内面の中心軸に対して傾いていても、電極補正リング１１の中央部に明けられたテーパ状の位置決め孔１８によって、円筒形電極内部の中央に設置されるように位置補正される。
これにより、棒状電極１と円筒形電極１０との電極間距離が一定に保たれ、異常放電を誘発する電界集中をなくし、均一な電界を印加することによって異常放電を抑制する。 The conical claw 21 is actuated by fluid pressure and holds the lower end portion of the rod-shaped electrode 1 in point contact. (Pressing with a helical spring when gripping, and fluid pressure may be used when opening the nail.)
For this reason, even if the rod-shaped electrode 1 is inclined with respect to the central axis of the inner surface of the cylindrical electrode 10, the taper-shaped positioning hole 18 opened in the center portion of the electrode correction ring 11 causes The position is corrected so that it is installed in the center.
Thereby, the interelectrode distance between the rod-like electrode 1 and the cylindrical electrode 10 is kept constant, the electric field concentration that induces abnormal discharge is eliminated, and abnormal electric discharge is suppressed by applying a uniform electric field.

次に、本発明の一実施形態の作動について、説明する。
ロボットハンドなどにより、パワーチャック２０の中央に棒状電極１をセットして、ベース１５中央部に棒状電極１をセットする。パワーチャック２０の爪２１が、棒状電極１は下端部を点で把持する。その上で、円筒形電極１０の所定位置に電極補正リング１１をセットして、棒状電極１を円筒形電極１０にかぶせるように下降させる。 Next, the operation of one embodiment of the present invention will be described.
The rod-shaped electrode 1 is set at the center of the power chuck 20 and the rod-shaped electrode 1 is set at the center of the base 15 by a robot hand or the like. The claw 21 of the power chuck 20 grips the lower end portion of the rod-shaped electrode 1 with a point. Then, the electrode correction ring 11 is set at a predetermined position of the cylindrical electrode 10 and the rod-shaped electrode 1 is lowered so as to cover the cylindrical electrode 10.

このプラズマ発生装置の円筒チェンバーを、１×１０-2Ｐａ以下までロータリーポンプ（その他、ターボ分子ポンプ、クライオポンプなどでもよい）にて排気した後、被成膜面のクリーニングのため、ガス導入口１４からＡｒガスを導入し、棒状電極１にＤＣパルス電源から電圧（１００Ｖ〜５ｋＶ）を印加しプラズマを生成させ、Ａｒイオンを棒状電極１、円筒形電極１０に衝突させ被成膜面を活性化する。 The cylindrical chamber of this plasma generator is evacuated to 1 × 10 −2 Pa or less with a rotary pump (others may be a turbo molecular pump, cryopump, etc.), and then a gas inlet for cleaning the deposition surface 14, Ar gas is introduced, and a voltage (100 V to 5 kV) is applied to the rod-shaped electrode 1 from a DC pulse power source to generate plasma, and Ar ions collide with the rod-shaped electrode 1 and the cylindrical electrode 10 to activate the film formation surface. Turn into.

次いでＣＨ4、Ｃ2Ｈ4、Ｃ2Ｈ2等のメタン系、エチレン系、アセチレン系の炭化水素又はＣＦ4等のフッ化炭化水素系のガスとＨ2ガスを導入する。このときの圧力は１０Ｐａ〜大気圧とする。次に、被成膜面のクリーニングと同様ＤＣパルス電圧を印加しプラズマを生成し、被成膜面に膜を形成した。このようにして、異常放電なく皮膜形成することができる。以上の場合、ＣＶＤの一例を示したが、これに限定されるものではない。耐摩耗性膜、好摺動性膜の形成に限らず、表面処理（汚染除去、改質）、薄膜形成、エッチングなどの処理に応じて、適宜、使用するガス、印加電圧が選定される。 Next, a methane-based, ethylene-based, acetylene-based hydrocarbon such as CH 4 , C 2 H 4 , C 2 H 2 or a fluorinated hydrocarbon-based gas such as CF 4 and H 2 gas are introduced. The pressure at this time is 10 Pa to atmospheric pressure. Next, as in the cleaning of the film formation surface, a DC pulse voltage was applied to generate plasma, and a film was formed on the film formation surface. In this way, a film can be formed without abnormal discharge. In the above case, an example of CVD has been shown, but the present invention is not limited to this. The gas to be used and the applied voltage are appropriately selected according to the treatment such as surface treatment (contamination removal, modification), thin film formation, etching, etc., as well as the formation of the wear-resistant film and the slidable film.

使用するガスとして、Ａｒ、Ｎ2、Ｏ2、Ｈ2、ＣＨ4、Ｃ2Ｈ2、Ｃ2Ｈ4、ＣＦ4、ＳＦ6、ＳｉＨ4、ＳｉＨ3Ｃｌ、ＳｉＨ2Ｃｌ2などが挙げられる。また、電極補正リング１１の絶縁材料としては、アルミナＡｌ2Ｏ3、窒化珪素Ｓｉ3Ｎ4、ジルコニアＺｒ2Ｏ5、イットリアＹ2Ｏ3などが挙げられる。 Examples of the gas used include Ar, N 2 , O 2 , H 2 , CH 4 , C 2 H 2 , C 2 H 4 , CF 4 , SF 6 , SiH 4 , SiH 3 Cl, SiH 2 Cl 2 and the like. . Examples of the insulating material for the electrode correction ring 11 include alumina Al 2 O 3 , silicon nitride Si 3 N 4 , zirconia Zr 2 O 5 , and yttria Y 2 O 3 .

本発明の別の実施形態として、次のような変形形態が考えられる。
本発明の一実施形態ではパワーチャック２０で、棒状電極１の下端部を点接触して把持したが、図３に示すようなコレットチャック、図４に示すようなダイヤフラムチャックを用いても良い。 As another embodiment of the present invention, the following modifications can be considered.
In one embodiment of the present invention, the power chuck 20 grips the lower end portion of the rod-shaped electrode 1 by point contact, but a collet chuck as shown in FIG. 3 or a diaphragm chuck as shown in FIG. 4 may be used.

図３に示すコレットチャックの場合は、コレットチャック３０は３つ割り構造体３０’になっており、相互間にはバネ３２で拡張するように付勢されている。構造体３０’上部には爪３１がそれぞれ形成されている。構造体３０’下部には作動ロッド３３が係合している。作動ロッド３３が下方に引っ張られると、コレットチャック３０の構造体３０’の外周がテーパ面となっており、ベース１５のテーパ面との楔作用により、棒状電極１の下端部を点接触して把持することができる。   In the case of the collet chuck shown in FIG. 3, the collet chuck 30 has a three-fold structure 30 ′, and is biased so as to expand with a spring 32 therebetween. Claws 31 are formed on the upper portion of the structure 30 '. An operating rod 33 is engaged with the lower portion of the structure 30 '. When the operating rod 33 is pulled downward, the outer periphery of the structure 30 ′ of the collet chuck 30 becomes a tapered surface, and the lower end portion of the rod-shaped electrode 1 is brought into point contact by the wedge action with the tapered surface of the base 15. It can be gripped.

図４に示すダイヤフラムチャックの場合は、ダイヤフラム４０に３個の爪４１が突設されており、作動ロッド４２を下方に引っ張ると、棒状電極１の下端部を点接触して把持することができる。   In the case of the diaphragm chuck shown in FIG. 4, three claws 41 protrude from the diaphragm 40, and when the operating rod 42 is pulled downward, the lower end portion of the rod-shaped electrode 1 can be gripped by point contact. .

次に、本発明の一実施形態では、電極補正リング１１は、移動用ロッド１６で上下動するように構成されていた。電極補正リング１１の上下動の作動方式としては、様々な変形形態が考えられる。移動用ロッド１６は円筒チェンバー部に設けられていたが、ベース１５から延びてきた移動用ロッドで、電極補正リング１１を上下動させても良い。   Next, in one embodiment of the present invention, the electrode correction ring 11 is configured to move up and down by the moving rod 16. As an operation method of the vertical movement of the electrode correction ring 11, various modifications can be considered. Although the moving rod 16 is provided in the cylindrical chamber portion, the electrode correcting ring 11 may be moved up and down with the moving rod extending from the base 15.

移動用ロッド１６を用いない方式としては、出没自在な係止ピンで円筒形電極１０の所定位置で停留させておき、電極補正リング１１による棒状電極１の位置補正を行う。その後、係止ピンの停留をはずし、円筒チェンバー内で、電極補正リング１１の上部から圧をかけて、電極補正リング１１を落下させて、棒状電極１に電圧を印加してプラズマ処理する方式としても良い。   As a method not using the moving rod 16, the rod-shaped electrode 1 is corrected by the electrode correction ring 11 by stopping at a predetermined position of the cylindrical electrode 10 with a locking pin that can be moved in and out. Thereafter, the locking pin is removed, the pressure is applied from above the electrode correction ring 11 in the cylindrical chamber, the electrode correction ring 11 is dropped, and a voltage is applied to the rod-shaped electrode 1 to perform plasma processing. Also good.

円筒チェンバー内で、電極補正リング１１の下部から圧をかけて、電極補正リング１１を棒状電極１の処理面から上方に離間させる方式も考えられる。
以上の説明においては、棒状電極１の外周面が被処理対象であった。円筒チェンバー部に着脱自在に円筒形電極（１０）を設置すれば、円筒形電極（１０）を被処理対象とすることもできる。 A method of applying pressure from the lower part of the electrode correction ring 11 to separate the electrode correction ring 11 upward from the processing surface of the rod-shaped electrode 1 in the cylindrical chamber is also conceivable.
In the above description, the outer peripheral surface of the rod-shaped electrode 1 is the object to be processed. If the cylindrical electrode (10) is detachably installed in the cylindrical chamber portion, the cylindrical electrode (10) can be a target to be processed.

１ 棒状電極
１０ 円筒形電極
１１ 電極補正リング
１５ ベース
１７ 鍔部
１８ 位置決め孔
２０、３０、４０ チャック部 DESCRIPTION OF SYMBOLS 1 Rod-shaped electrode 10 Cylindrical electrode 11 Electrode correction ring 15 Base 17 鍔 part 18 Positioning hole 20, 30, 40 Chuck part

Claims (7)

円筒形電極（１０）を有する円筒チェンバー部と、棒状電極（１）と、前記円筒形電極（１０）の内周面を移動自在な電極補正リング（１１）と、ベース（１５）に設置されたチャック部（２０、３０、４０）とを具備するプラズマ発生装置において、
前記チャック部（２０、３０、４０）は、棒状電極（１）の下端部を点接触して把持させることができ、
前記電極補正リング（１１）の中央部には、テーパ状の位置決め孔（１８）が設けられており、
前記円筒形電極（１０）の中心軸が、前記チャック部（２０、３０、４０）の中心軸と一致するように、前記円筒チェンバー部は上下動可能に構成され、
前記電極補正リング（１１）が、前記円筒形電極（１０）の内周面の所定位置に位置決めされた状態で、前記円筒チェンバー部が下降すると、前記電極補正リング（１１）のテーパ状の位置決め孔（１８）によって、前記棒状電極（１）が前記円筒形電極（１０）の中心軸に設置されるように位置補正されるようにした、
電極間距離を一定にしてプラズマ放電を行うプラズマ発生装置。 A cylindrical chamber portion having a cylindrical electrode (10), a rod-shaped electrode (1), an electrode correction ring (11) movable on the inner peripheral surface of the cylindrical electrode (10), and a base (15). In the plasma generator comprising the chuck portions (20, 30, 40),
The chuck part (20, 30, 40) can be gripped by making point contact with the lower end of the rod-like electrode (1),
A tapered positioning hole (18) is provided in the center of the electrode correction ring (11),
The cylindrical chamber part is configured to be movable up and down so that the central axis of the cylindrical electrode (10) coincides with the central axis of the chuck part (20, 30, 40),
When the cylindrical chamber portion is lowered in a state where the electrode correction ring (11) is positioned at a predetermined position on the inner peripheral surface of the cylindrical electrode (10), the taper-shaped positioning of the electrode correction ring (11) is performed. The position of the rod-shaped electrode (1) is corrected by the hole (18) so that the rod-shaped electrode (1) is installed on the central axis of the cylindrical electrode (10).
A plasma generator that performs plasma discharge with a constant distance between electrodes. 前記チャック部（３０）が、コレットチャックであることを特徴とする請求項１に記載のプラズマ発生装置。   The plasma generating apparatus according to claim 1, wherein the chuck portion (30) is a collet chuck. 前記チャック部（４０）が、ダイヤフラムチャックであることを特徴とする請求項１に記載のプラズマ発生装置。   The plasma generating apparatus according to claim 1, wherein the chuck portion (40) is a diaphragm chuck. 前記チャック部（４０）の作動が流体圧で行われることを特徴とする請求項１に記載のプラズマ発生装置。   The plasma generator according to claim 1, wherein the operation of the chuck part (40) is performed by fluid pressure. 前記棒状電極（１）の外周面と前記円筒形電極（１０）の内周面との電極間距離が、５ｍｍ以下であることを特徴とする請求項１から４のいずれか１項記載のプラズマ発生装置。   The plasma according to any one of claims 1 to 4, wherein a distance between the outer peripheral surface of the rod-shaped electrode (1) and an inner peripheral surface of the cylindrical electrode (10) is 5 mm or less. Generator. プラズマＣＶＤ処理により円筒形電極内面に皮膜を形成することを特徴とする請求項１から５のいずれか１項記載のプラズマ発生装置。   6. The plasma generator according to claim 1, wherein a film is formed on the inner surface of the cylindrical electrode by plasma CVD. プラズマＣＶＤ処理により棒状電極表面に皮膜を形成することを特徴とする請求項１から５のいずれか１項記載のプラズマ発生装置。   6. The plasma generating apparatus according to claim 1, wherein a film is formed on the surface of the rod-shaped electrode by plasma CVD processing.
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