JP2010217005A - Electrical connecting device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To facilitate temperature control of a probe substrate by reducing the temperature control range of the probe substrate. <P>SOLUTION: The electrical connecting device includes a support having a lower surface; a probe substrate assembled to the lower surface of the support and supported by the support; and a plurality of probes mounted on the lower surface of the probe substrate. The probe substrate includes a heating element which generates heat by receiving power, and the probe substrate has a thermal expansion coefficient of ≥10 ppm/°C. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to an electrical connection device such as a probe card used for an electrical test of a flat test object such as a semiconductor integrated circuit, and in particular, a connection between the test object and an electrical circuit of a tester performing the electrical test. The present invention relates to an electrical connection device used in the above.

  As one example of this type of electrical connection device, a support body having a lower surface, a wiring board held on the lower surface of the support body, and arranged below the wiring board with a space therebetween, are attached to the support body. Including a supported probe board, an electrical connector disposed between the wiring board and the probe board and attached to the wiring board, and a plurality of contacts attached to the lower surface of the probe board (For example, Patent Documents 1 and 2).

  In the connection device as described above, the needle points of the plurality of contacts are arranged at a height from the object to be inspected so that the needle points are pressed against the electrode of the object to be inspected with the same force (overdrive force) during the test. The position of the object to be inspected is in a plane (X, Y coordinates) parallel to the object to be inspected so that the position of the needle tip is surely in contact with the electrode of the object to be inspected. It is adjusted to the coordinate position of the electrode.

  In a test of a semiconductor integrated circuit, a test is performed in a state where an object to be inspected is maintained at a temperature within a range of an extremely low temperature such as minus 40 ° C. from an elevated temperature such as plus 60 ° C. .

  During the test in the high temperature environment or the extremely low temperature environment as described above, the object to be inspected is maintained at a predetermined temperature by a heating element or a heat absorption body provided on the chuck top that holds the object. As a result, the connection device itself is heated or cooled from below by the object to be inspected, the chuck top, etc., and used in a high temperature environment or a cryogenic environment.

  In such a connection device, when the position of the needle tip is adjusted so as to coincide with the position of the electrode of the object under normal temperature, the connection device is used in a high temperature environment or a cryogenic environment. In this case, the position of the tip of the probe with respect to the electrode of the object to be inspected greatly differs due to the difference in the coefficient of thermal expansion between the probe substrate and the object to be inspected (particularly the amount of thermal expansion or heat shrinkage). As a result, there is a contact where the position of the needle tip deviates from the corresponding electrode and the needle tip does not contact the electrode, and an accurate test result of the device under test cannot be obtained.

  Contrary to the above, when the position of the needle tip is adjusted so as to match the position of the electrode when the object to be inspected is maintained at the test temperature, the object under test is tested at other temperatures. In such a case, there arises a problem related to the needle tip position due to the difference in coefficient of thermal expansion as described above.

  The problem related to the position of the needle tip due to the difference in the coefficient of thermal expansion as described above is as in the case of inspecting a large number of uncut objects on a semiconductor wafer at one time or in multiple times at the same time. The larger the number of contacts to be provided, the larger.

  In order to solve the above-described problem of the connection device described in Patent Documents 1 and 2, etc., it is conceivable to take measures such as manufacturing the probe substrate and the object to be inspected with materials having substantially the same thermal expansion coefficient.

  However, even in such a case, in the conventional connection device, the probe substrate is only heated or cooled by the convection or radiation of heat between the probe substrate, the inspection object and the inspection stage. Cannot be heated or cooled to a temperature higher or lower than that of the probe substrate.

  For this reason, in the conventional connection device, when the test object is tested at a temperature other than the temperature of the test object when the electrode and the position of the needle tip coincide with each other, the temperature of the probe substrate and the test object is determined. Due to the difference, it is unavoidable that the position of the needle tip with respect to the electrode of the object to be inspected is greatly different.

  In order to solve the above-mentioned problems caused by the difference in thermal expansion coefficient and the temperature difference between the probe substrate and the object to be inspected, a heater is arranged on the probe substrate, and the temperature of the probe substrate by this heater depends on the temperature of the object to be inspected. A connection device has been proposed (Patent Document 3).

  In the technique of Patent Document 3, when the object to be inspected is in a low temperature state, the position of the needle tip is adjusted in advance so that the electrode of the object to be inspected and the needle tip coincide with each other, and the probe substrate is used by the heater during the test Is heated to an arbitrary temperature corresponding to the temperature of the object to be inspected, thereby reducing the deviation of the position of the needle tip from the electrode of the object to be inspected.

  However, in the technique of Patent Document 3, the temperature of the probe substrate by the heater must be controlled within the same range as the temperature control range of the object to be inspected. For example, when the object to be inspected must be controlled within a range of plus 60 ° C. to minus 40 ° C., the temperature of the probe substrate must also be controlled within a range of plus 60 ° C. to minus 40 ° C.

  For this reason, in the technique of Patent Document 3, since the temperature control range of the probe substrate becomes too large, that is, the followability of the thermal change (expansion amount and contraction amount) of the probe substrate with respect to the temperature change of the probe substrate is low. It is difficult to control the temperature of the substrate.

  An object of the present invention is to make the temperature control of the probe substrate easy by reducing the temperature control range of the probe substrate.

  An electrical connection device according to the present invention includes a support having a lower surface, a probe substrate assembled to the lower surface of the support and supported by the support, and a plurality of contacts attached to the lower surface of the probe substrate. Including children. The probe board includes a heating element that generates heat when receiving electric power, and the probe board has a coefficient of thermal expansion of 10 ppm / ° C. or more.

  The probe substrate includes a ceramic substrate having a coefficient of thermal expansion of 10 ppm / ° C or more, and a resin substrate disposed on the lower surface of the ceramic substrate, the contactor being attached to the lower surface, The resin substrate may have a thermal expansion coefficient substantially the same as that of the ceramic substrate.

  The resin substrate may have a coefficient of thermal expansion within a range of 10 ppm / ° C. to 20 ppm / ° C., preferably 15 ppm / ° C. to 20 ppm / ° C. Further, the support and the probe substrate can have substantially the same coefficient of thermal expansion.

  The support may have a coefficient of thermal expansion of 10.4 ppm / ° C, and the probe substrate may have a coefficient of thermal expansion of 10.0 ppm / ° C. In this case, the support is made of stainless steel having a coefficient of thermal expansion of 10.4 ppm / ° C, and the probe substrate is made of forsterite having a coefficient of thermal expansion of 10.0 ppm / ° C. Good.

  The probe substrate may be made of a material having a coefficient of thermal expansion greater than that of the object to be inspected. In this case, the probe substrate may have a thermal expansion coefficient within a range of 1.8 times to 2.6 times the thermal expansion coefficient of the inspection object.

  The thermal expansion coefficient of the probe substrate is higher than the thermal expansion coefficient of the wafer (silicon) as the object to be inspected. If the coefficient of thermal expansion of the probe substrate is high, the probe substrate temperature can be easily controlled because the probe substrate has a high followability to the thermal change of the probe substrate.

  For example, if the thermal expansion coefficient of the probe substrate is twice the thermal expansion coefficient of the object to be inspected, the temperature control range of the probe substrate may be half of the temperature control range of the object to be inspected. The temperature control of the probe substrate becomes easier.

  When the thermal expansion coefficients of the ceramic substrate and the resin substrate forming the probe substrate are substantially the same, the stress on the resin substrate due to the difference in thermal expansion between the ceramic substrate and the resin substrate is relieved.

It is a front view which shows one Example of the electrical connection apparatus which concerns on this invention. It is an expanded sectional view which shows one Example of the support state of the probe board to the support body in the connection apparatus shown in FIG. It is a figure which shows the 1st Example of the adjustment temperature of a probe board | substrate with respect to the temperature of a to-be-inspected object. It is a figure which shows the 2nd Example of the adjustment temperature of a probe board | substrate with respect to the temperature of a to-be-inspected object. It is a figure which shows the 3rd Example of the adjustment temperature of a probe board | substrate with respect to the temperature of a to-be-inspected object.

  [Terminology]

  In the present invention, in FIG. 1, the vertical direction is referred to as the vertical direction, the horizontal direction is referred to as the horizontal direction, and the paper back direction is referred to as the front-rear direction. However, their directions vary depending on the probe board on which a large number of contacts are arranged, and the probe card using the contact board, that is, the connection apparatus in a state where the electrical connection apparatus is attached to the tester, particularly the posture of the probe board. .

  Therefore, in the electrical connection device according to the present invention, in the state where it is attached to the tester, the vertical direction in the present invention is actually the vertical direction, the upside down state, and the diagonal direction. It may be used in any state such as a state.

  [Example]

  Referring to FIG. 1, an electrical connection apparatus 10 uses a plurality of integrated circuits formed on a disk-shaped semiconductor wafer as an object to be inspected 12, and the integrated circuits are divided into a single time or a plurality of times simultaneously. Inspect or test. Each integrated circuit 12 has a plurality of electrodes 14 such as pad electrodes on the top surface.

  The wafer is vacuum-removably attracted to an inspection stage (not shown), and is moved three-dimensionally in the front-rear, left-right, and up-down directions and angularly around the θ axis extending in the up-down direction prior to the test. To be rotated. Thereby, each electrode 14 is positioned so as to be able to contact the needle tip of the contact 20.

  Referring to FIGS. 1 and 2, the connection device 10 includes a plurality of contacts 20, a reinforcing member 22 having a flat lower surface, and a circular flat wiring held on the lower surface of the reinforcing member 22. It includes a substrate 24, a flat electrical connector 26 disposed on the lower surface of the wiring substrate 24, and a probe substrate 28 disposed on the lower surface of the electrical connector 26. Each contact 20 is supported in the form of a cantilever on the lower surface of the probe substrate 28.

  In the illustrated example, each contact 20 uses a plate-like probe having a crank shape. Such a contact 20 is a known one described in, for example, Japanese Patent Application Laid-Open No. 2005-201844.

  However, each contact 20 includes a probe made from a fine metal wire such as a tungsten wire, a plate-like probe produced using a photolithography technique and a deposition technique, and one surface of an electrical insulating sheet such as polyimide. A conventionally known probe or the like may be used, such as a probe in which a plurality of wirings are formed on a part and a part of the wirings are used as contacts.

  The reinforcing member 22 is manufactured in a circular shape with a metal material such as a stainless steel plate. For example, as described in Japanese Patent Application Laid-Open No. 2008-145238, the reinforcing member 22 includes an inner annular portion, an outer annular portion, a plurality of connecting portions that connect both annular portions, and an outer annular portion. It has a plurality of extensions that extend radially outward and a central frame that continues integrally inside the inner annular portion, and has a shape that acts as a space that opens in both the upper and lower directions between these portions. It can have a flat front shape.

  Further, for example, as described in Japanese Patent Application Laid-Open No. 2008-145238, an annular thermal deformation suppressing member that suppresses thermal deformation of the reinforcing member 22 is arranged on the upper side of the reinforcing member 22, and the thermal deformation suppressing member A cover may be placed on top.

  In the illustrated example, the wiring board 24 is manufactured in a disk shape from an electrically insulating resin such as an epoxy resin containing glass, and a plurality of conductive paths, that is, internal wirings 30 ( 2) and a plurality of power supply paths 32 (see FIG. 2) used for supplying heating power (heating current).

  The test signal is an electric signal such as a supply signal supplied to the integrated circuit for testing or a response signal from the integrated circuit to the supply signal. The heating power is power supplied to the heating element 52 described later.

  Each of the internal wiring 30 and the power supply path 32 of the wiring substrate 24 is connected to a tester (not shown) via a connection terminal (not shown) such as a connector terminal or a tester land provided on the annular peripheral portion of the upper surface of the wiring substrate 24. Connected to an electrical circuit or power source (not shown).

  The reinforcing member 22 and the wiring board 24 are coaxially coupled by a plurality of screw members (not shown) in a state where the lower surface of the reinforcing member 22 and the upper surface of the wiring board 24 are in contact with each other.

  The electrical connector 26 is a well-known one described in, for example, Japanese Patent Application Laid-Open No. 2008-145238. Such an electrical connector 26 includes a plate-shaped electrically insulating pin holder 34, and a large number of connection pins 36 such as pogo pins extending through the pin holder 34 in the vertical direction and a plurality of connection pins 38.

  The electrical connector 26 also connects the internal wiring 30 and the power feeding path 32 of the wiring board 24 to the conductive path 40 and the power feeding path 42 described after the probe board 28 by connection pins 36 and 38 (both see FIG. 2). ) Is electrically connected.

  The electrical connector 26 includes a plurality of screw members and appropriate members (both not shown) in a state in which the upper surface of the pin holder 34 is in contact with the lower surface of the wiring substrate 24, and the lower surface of the wiring substrate 24 in the pin holder 34. Is bound to.

  In the example shown in FIG. 2, each of the connection pins 36 and 38 uses a pogo pin whose upper end and lower end are separated by a spring 44. Each of the connection pins 36 and 38 has its upper end pressed against a terminal portion (not shown) following the inner wiring 30 of the wiring board 24 or the lower end portion of the power supply path 32, and has its lower end conductive to the probe board 28. The terminal 40 (not shown) following the upper end of the path 40 or the power supply path 42 is pressed.

  In the illustrated example, the probe substrate 28 is a combined substrate in which a sheet-like resin substrate 46 formed of an electrically insulating resin such as a polyimide resin is laminated on the lower surface of the ceramic substrate 48. The contact 20 is attached in a cantilever manner.

  The resin substrate 46 has a plurality of internal wirings 50 (see FIG. 2) inside and a known shape and structure having a plurality of probe lands (not shown) electrically connected to the internal wirings 50 on the lower surface. And is formed integrally with the ceramic substrate 48.

  Each contact 20 is cantilevered on the above-described probe land by a method such as bonding with a conductive bonding material such as solder, laser welding, or the like with its tip (that is, the needle tip) protruding downward. It is attached to the shape.

  As shown in FIG. 2, the ceramic substrate 48 includes a plurality of conductive paths 40 and a plurality of power supply paths 42 as described above, and at least one heating element such as a heater that generates heat by the supplied heating power. 52 is provided inside. In the connection device 10, the heating element 52 is formed in one or more layers on the ceramic substrate 48.

  Each conductive path 40 of the ceramic substrate 48 is electrically connected to the internal wiring 50 of the resin substrate 46 and is also electrically connected to the internal wiring 30 of the wiring substrate 24 via the connection pins 36. Further, it is used for passing test signals to the contact 20 together with the internal wirings 30 and 50.

  On the other hand, each power supply path 42 of the ceramic substrate 48 is electrically connected to the internal wiring 32 of the wiring board 24 via the connection pins 38, and together with the connection pins 38 and the internal wiring 32, the heating element. It is used to supply heating power to 52. The heating power is supplied from a power source (not shown).

  As shown in FIG. 2, the probe substrate 28 as described above is in a state where the upper surface of the ceramic substrate 48 is pushed toward the lower surface of the electrical connector 26, by the spacer 56 and the screw member 58 at each of a plurality of locations. The reinforcing member 22 is supported. For this reason, in the illustrated example, the reinforcing member 22 functions as a support for supporting the probe substrate 28.

  In order to support the probe substrate 28 on the reinforcing member 22 as described above, in the illustrated example, a plurality of fixing portions 54 are formed on the upper surface of the probe substrate 28, particularly the upper surface of the ceramic substrate 48. Each fixing portion 54 has a top surface with which the lower end of the cylindrical spacer 56 abuts, and a female screw hole 54a that is open upward and into which a lower end portion of a bolt-shaped screw member 58 is screwed.

  Each spacer 56 has a head portion 56a in contact with the upper surface of the reinforcing member 22 and a male screw portion 56b screwed into the female screw hole 22a of the reinforcing member 22, and the wiring board 24 and the pin holder. 34 is passed through from the upper side to the lower side, and the lower end is in contact with the top surface of the fixing portion 54.

  Each screw member 58 is passed through the through hole 56c of the spacer 56 from the top to the bottom so that the head portion 58a is in contact with the top surface of the head portion 56a of the spacer 56 and the lower end portion of the male screw portion 58b is fixed. It is screwed into the female screw hole 54a of the portion 54.

  Each spacer 56 is screwed into the female screw hole 22a with its head 56a and lower end pressed against the upper surface of the reinforcing member 22 and the top surface of the fixing portion 54, respectively. Each screw member 58 has its head 58 a pressed against the upper surface of the spacer 56, and the lower end of the male screw 58 b is screwed into the female screw hole 54 a. As a result, the probe substrate 28 is supported by the reinforcing member 22.

  The ceramic substrate 48 is provided with one or more temperature sensors 64 (see FIG. 1). The temperature sensor 64 detects the temperature of the ceramic substrate 48 and supplies an electric signal corresponding to the detected temperature to a control device (not shown). Based on the temperature signal from the temperature sensor 64, the control device controls the heating current so that the temperature of the ceramic substrate 48 and thus the probe substrate 28 becomes a set temperature corresponding to the test temperature of the device under test 12.

  The temperature sensor 64 controls the above-described control via internal wiring (not shown) provided on the ceramic substrate 48, other connection pins (not shown) provided on the electrical connector 26, internal wiring (not shown) provided on the wiring substrate 24, and the like. Connected to the device.

  In the electrical connection apparatus 10 described above, the probe substrate 28, particularly the ceramic substrate 48, is made of a material having a coefficient of thermal expansion larger than that of the device under test 12. It is made of a material that is in the range of .8 times to almost 2.6 times.

  Further, the reinforcing member 22 and the probe substrate 28, particularly the ceramic substrate 48, are made of materials having substantially the same coefficient of thermal expansion, preferably the coefficient of thermal expansion of the reinforcing member 22 is 0.9 with respect to the coefficient of thermal expansion of the probe substrate 28. To 1.12 times the material. Thereby, the displacement of the needle tip position of the contact 20 with respect to the electrode 14 of the device under test 12 due to the difference in thermal expansion coefficient between the reinforcing member 22 and the probe substrate 28, particularly the ceramic substrate 48 is suppressed. .

  A semiconductor wafer as the device under test 12 generally has a coefficient of thermal expansion of 3.9 ppm / ° C. to 5.5 ppm / ° C. In this case, as one of the most preferable examples of the material as described above, the reinforcing member 22 is stainless steel (SUS410 or 430) having a coefficient of thermal expansion of 10.4 ppm / ° C, and the ceramic substrate 48 is 10.0 ppm / °. Mention may be made of forsterite (fine ceramic) having a coefficient of thermal expansion of C or ceramic having a coefficient of thermal expansion of 10.4 ppm / ° C.

  According to the above combination, the magnification of the coefficient of thermal expansion of the ceramic substrate 48 with respect to the device under test 12 is in the above range. Further, if the thermal expansion coefficients of the reinforcing member 22 and the ceramic substrate 46 are the above values, the magnification of the thermal expansion coefficient of the ceramic substrate 48 with respect to the reinforcing member 22 is in the above range.

  However, the reinforcing member 22 and the ceramic substrate 48 may be made of a material having another coefficient of thermal expansion. As another material, the reinforcing member 22 is an austenitic material such as Niresto (type 5) having a thermal expansion coefficient of 5 to 6 ppm / ° C, and the ceramic substrate 48 has a thermal expansion coefficient of 5.5 ppm / ° C. Glass alumina can be mentioned.

  The resin substrate 46 is made of a material having substantially the same thermal expansion coefficient as that of the ceramic substrate 48. For example, when the ceramic substrate 48 is forsterite having a coefficient of thermal expansion of 10.0 ppm / ° C, the resin substrate 46 can be a polyimide resin substrate having a coefficient of thermal expansion of 15.0 ppm / ° C. However, the thermal expansion coefficient of the resin substrate 46 can be in the range of 10 ppm / ° C to 20 ppm / ° C.

  During the electrical test of the inspection object 12, the inspection object 12 is heated to a high temperature such as plus several tens of degrees C by the inspection stage. At this time, the heating element 52 is controlled based on the temperature signal from the temperature sensor 64 so that the temperature of the ceramic substrate 48 and thus the probe substrate 28 becomes a set temperature corresponding to the actual test temperature of the device under test 12. Controlled by the device.

  As a result, the probe substrate 28 is heated by the inspection object 12 and the inspection stage from the lower side and is heated by the internal heating element 52 to be maintained at a temperature corresponding to the temperature of the inspection object 12.

  The tested object 12, the reinforcing member 22, the resin substrate 46, and the ceramic substrate 48 are respectively a silicon substrate having a thermal expansion coefficient of 3.9 ppm / ° C and a stainless steel having a thermal expansion coefficient of 10.4 ppm / ° C. SUS410) The temperature of the probe substrate 28 with respect to the temperature change characteristic 66 of the device under test 12 in the case of a forsterite having a thermal expansion coefficient of 10.0 ppm / ° C and a polyimide substrate having a thermal expansion coefficient of 15 ppm / ° C. One embodiment of the change characteristic 68 is shown in FIGS.

  FIG. 3 shows the probe substrate relative to the temperature of the device under test 12 when the temperatures of the device under test 12 and the probe substrate 28 when the needle tip contacts the corresponding electrode of the device under test 12 are both set to plus 100 ° C. An example of 28 adjustment temperatures is shown.

  In FIG. 3, the temperature of the ceramic substrate 48 and thus the probe substrate 28 is adjusted as follows according to the test temperature of the device under test 12 (the temperature of the device under test 12 to be maintained when testing).

  When the test temperature of the device under test 12 is set to plus 100 ° C, it is adjusted to plus 100 ° C. When the test temperature of the device under test 12 is set to minus 40 ° C., it is adjusted to almost plus 40 ° C.

  When the test temperature of the device under test 12 is set to any temperature between plus 100 ° C and minus 40 ° C, for example, the test temperature of the device under test 12 is plus 50 ° C and plus 20 ° C. (Normal temperature) and when set to 0 ° C, respectively, between plus 100 ° C and almost plus 40 ° C, such as almost plus 80 ° C, almost plus 68 ° C and almost 59 ° C, respectively. The temperature is adjusted to any temperature corresponding to the test temperature of the device under test 12.

  FIG. 4 shows the inspected object 12 when the temperatures of the inspected object 12 and the probe substrate 28 when the needle tip contacts the corresponding electrode of the inspected object 12 are set to minus 40 ° C. and plus 25 ° C., respectively. An example of the adjustment temperature of the probe substrate 28 with respect to the temperature is shown.

  In FIG. 4, the temperature of the ceramic substrate 48 is adjusted as follows according to the test temperature of the device under test 12.

  When the test temperature of the device under test 12 is set to plus 100 ° C, it is adjusted to almost plus 79 ° C. When the test temperature of the device under test 12 is set to minus 40 ° C., it is adjusted to plus 25 ° C.

  When the test temperature of the device under test 12 is set to any temperature between plus 100 ° C and minus 40 ° C, for example, the test temperature of the device under test 12 is plus 50 ° C, plus 20 ° C ( Normal temperature) and 0 ° C., between approximately plus 79 ° C. and approximately plus 25 ° C., such as approximately plus 60 ° C., approximately plus 46 ° C. and approximately 40 ° C., respectively. The temperature is adjusted to any temperature corresponding to the test temperature of the device under test 12.

  FIG. 5 shows the inspected object 12 when the temperatures of the inspected object 12 and the probe board 28 when the needle tip contacts the corresponding electrode of the inspected object 12 are set to plus 100 ° C. and plus 110 ° C., respectively. An example of the adjustment temperature of the probe substrate 28 with respect to the temperature is shown.

  In FIG. 5, the temperature of the ceramic substrate 48 is adjusted as follows according to the test temperature of the device under test 12.

  When the test temperature of the device under test 12 is set to plus 100 ° C, it is adjusted to plus 110 ° C. When the test temperature of the device under test 12 is set to minus 40 ° C., it is adjusted to plus about 53 ° C.

  When the test temperature of the device under test 12 is set to any temperature between plus 100 ° C and minus 40 ° C, for example, the test temperature of the device under test 12 is plus 50 ° C and plus 20 ° C. In the case of (normal temperature) and 0 ° C, the object to be inspected between plus 110 ° C and almost plus 53 ° C, such as almost plus 90 ° C, almost plus 86 ° C and almost 70 ° C, respectively. It is adjusted to any temperature corresponding to 12 test temperatures.

  As apparent from FIGS. 3, 4, and 5, the thermal expansion coefficient (10.0 ppm / ° C.) of the ceramic substrate 48 and the probe substrate 28 is 2 which is the thermal expansion coefficient (3.9 ppm / ° C.) of the device under test 12. According to the connecting device that is five times larger, the temperature of the probe substrate 28 can be easily controlled because the follow-up of the thermal change of the probe substrate 28 to the temperature change of the probe substrate 28 is high.

  Even when the device under test 12 is set to a temperature of about minus 40 to 60 ° C., according to the connecting device, the probe substrate 28 may be adjusted by the heating element 52 within the temperature range on the plus side. The temperature control of the probe substrate 28 becomes easier.

  However, in order to rapidly change the temperature change of the probe substrate 28 from a high temperature to a low temperature and to change the probe substrate 28 to a negative temperature, a thermo module (in addition to the heating element 52) that is cooled by cooling power ( An endothermic body (cooling body) such as a product name may be provided in the probe substrate 28, particularly the ceramic substrate 48.

  The resin substrate is made of a resin material having a thermal expansion coefficient (for example, 50 ppm / ° C) larger than the thermal expansion coefficient (10.0 ppm / ° C) of the ceramic substrate as in a conventional general connection device. Due to the difference in thermal expansion between the ceramic substrate and the resin substrate, a large difference occurs in the expansion amount or expansion / contraction amount between the two, which causes a large stress on the resin substrate.

  However, according to the connection device as described above, the thermal expansion coefficients of the ceramic substrate 48 and the resin substrate 46 forming the probe substrate 28 are approximately the same as 10.0 ppm / ° C and 15 ppm / ° C, respectively. Therefore, the stress of the resin substrate due to the difference in thermal expansion between the ceramic substrate 48 and the resin substrate 46 is relieved.

  In the electrical connection device 10, the reinforcing member 22 may be provided with a heating element 60 (see FIG. 1) that generates heat upon receiving electric power. By doing so, the reinforcing member 22 is also heated by the other heating element 60, and the reinforcing member 22 is maintained at a temperature corresponding to the temperatures of the device under test 12 and the probe substrate 28. Also in this case, another endothermic body (cooling body) cooled by the cooling power may be provided in the reinforcing member 22.

  The probe board 28 may be supported by the wiring board 24 instead of being supported by the reinforcing member 22. In this case, the reinforcing member 22 can be omitted, and the wiring board 24 acts as a support. On the contrary, the wiring board 24 or the electrical connector 26 may be omitted. Further, the temperature sensor 64 may be omitted.

  The present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the spirit described in the claims.

DESCRIPTION OF SYMBOLS 10 Electrical connection apparatus 12 Test object 14 Electrode 20 Contact 22 Reinforcing member 24 Wiring board 26 Electrical connector 28 Probe board 52,60 Heating element

WO 2007/046153 WO 2008/114464 Japanese Patent Laid-Open No. 11-51972 JP 2008-298749 A

Claims (8)

A support body having a lower surface, a probe board assembled to the lower surface of the support body and supported by the support body, and a plurality of contacts attached to the lower surface of the probe board;
The electrical connection device, wherein the probe board includes a heating element that generates heat when receiving electric power, and the probe board has a coefficient of thermal expansion of 10 ppm / ° C or more. The probe substrate includes a ceramic substrate having a coefficient of thermal expansion of 10 ppm / ° C or higher, and a resin substrate disposed on the lower surface of the ceramic substrate, the contactor being attached to the lower surface,
The electrical connection device according to claim 1, wherein the resin substrate has a thermal expansion coefficient substantially equal to a thermal expansion coefficient of the ceramic substrate.   The electrical connection device according to claim 2, wherein the resin substrate has a coefficient of thermal expansion within a range of 10 ppm / ° C to 20 ppm / ° C.   The electrical connection device according to any one of claims 1 to 3, wherein the support and the probe substrate have substantially the same coefficient of thermal expansion.   5. The electrical device according to claim 1, wherein the support has a coefficient of thermal expansion of 10.4 ppm / ° C., and the probe substrate has a coefficient of thermal expansion of 10.0 ppm / ° C. 6. Connected device.   The support is made of stainless steel having a coefficient of thermal expansion of 10.4 ppm / ° C, and the probe substrate is made of forsterite having a coefficient of thermal expansion of 10.0 ppm / ° C. 5. The electrical connection device according to any one of items 1 to 4.   7. The electrical connection device according to any one of 1 to 6, wherein the probe substrate is made of a material having a thermal expansion coefficient larger than that of an object to be inspected.   The electrical connection device according to claim 7, wherein the probe board has a thermal expansion coefficient within a range of 1.8 times to 2.6 times the thermal expansion coefficient of the device under test.

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