JP2010212182A - Plasma treatment device and plasma treatment method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To prevent alteration and etching of a radiator and insulating tube by plasma. <P>SOLUTION: The plasma treatment device includes: a cylindrical casing 31 of which an upper end part is closed with a closing plate 11b and a lower end part is formed in an open end; a cylindrical radiator 14 erected on an inner surface of the closing plate 11b; and the insulating tube 11 for conveying inert gas G1 via an inside of the casing 31 to the open end, and emitting to an external of the casing 31. The casing 31 is structured as a reactive gas supply path for emitting reactive gas G2 supplied to its inside from the open end to the external and forming a reactive gas atmosphere in front of the open end. The radiator 14 radiates a supplied high frequency signal S1, and primary plasma P1 by the inert gas G1 which is converted into plasma is generated in the insulating tube 11c. The primary plasma P1 is emitted from a tip end part of the insulating tube 11c in the reactive gas atmosphere to covert the reactive gas G2 into plasma, and secondary plasma P2 or the like for plasma-treating a treatment object 6 is generated. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention includes a cylindrical casing whose one end is closed by a closing plate, and a radiation conductor erected on the inner surface of the closing plate so as to extend along the cylinder length direction of the casing. The present invention relates to a plasma processing apparatus that generates plasma near the tip of a radiation conductor, and a plasma processing method that is performed in the plasma processing apparatus.

  As this type of plasma processing apparatus, a plasma processing apparatus (microwave plasma generator) disclosed in Patent Document 1 below is known. This plasma processing apparatus includes a resonator configured by fixing a lid to the upper end of a cylindrical outer tube, a coaxial line disposed near the upper end of the outer tube, and an inner portion fixed to the center of the lid. A conductor (radiating conductor). Further, the conductor (center conductor) of the coaxial line is refracted in the direction of the lid within the outer tube, and the tip is connected to the lid. The length of the inner conductor is set to (λ / 2) × n + (λ / 4). A gas introduction port is formed in the outer tube. In this plasma processing apparatus, microwaves converted into a coaxial mode in the resonator are transmitted to the inner conductor via the coaxial line, and a high electric field is generated at the tip portion of the inner conductor, so that the gas is introduced from the gas inlet to the outer tube. The gas introduced into is converted into plasma, and plasma is generated at the tip portion of the inner conductor. Further, since the plasma generated in this manner alters or etches the inner surface of the outer tube, this plasma processing apparatus prevents this alteration or etching (hereinafter also referred to as “altering”). Accordingly, a quartz tube (insulating tube) is disposed on the inner peripheral surface of the outer tube surrounding the tip portion of the inner conductor, and plasma is generated in the quartz tube.

JP-A-6-1888094 (page 2-3, FIG. 2)

  However, as a result of intensive studies on the above-described conventional plasma processing apparatus by the present inventors, it has been found that the following problems exist in this plasma processing apparatus. That is, in this type of plasma processing apparatus, as the gas, generally, a gas (inert gas) for stably generating plasma and a processing gas (reactive gas) for processing the object to be processed are used. The mixed gas is used. In this case, the reactive gas has an extremely high ability to alter the substance in the plasma state and the etching power compared to the inert gas converted into plasma, and the inner peripheral surface of the outer tube as in the plasma processing apparatus described above. Even if a configuration in which a quartz tube (insulating tube) is arranged is used, the quartz tube itself is altered by the reactive gas that is converted into plasma. Further, the tip portion of the inner conductor where plasma is generated is also altered by the plasma-ized inert gas and the plasma-ized reactive gas. Therefore, it has been found that the plasma processing apparatus has a problem that the durability of the apparatus is lowered due to the deterioration of the tip portion of the internal conductor and the quartz tube.

  The present invention has been made to solve such problems, and provides a plasma processing apparatus and a plasma processing method capable of improving the durability by preventing the deterioration of the radiation conductor and the insulating tube due to plasma. Main purpose.

  In order to achieve the above object, a plasma processing apparatus according to claim 1, wherein a ground potential is applied, one end is closed by a closing plate, and the other end is formed at an open end. Any one or more of a body, a rod-shaped radiation conductor erected on the inner surface of the closing plate along the cylinder length direction of the casing, and inert gas, nitrogen gas, and air gas An insulating tube that transports a gas consisting of the gas to the open end of the casing via the inside of the casing, and discharges the gas to the outside of the casing from a tip located near the open end, Comprises a reactive gas supply path that discharges the reactive gas supplied inside from the open end to the outside and forms a reactive gas atmosphere in front of the open end, and is supplied with the radiation conductor By emitting a high frequency signal, The reactive plasma is generated by generating a primary plasma from the one or more gases formed into plasma in the tube and releasing the generated primary plasma from the tip of the insulating tube into the reactive gas atmosphere. At least one of a secondary plasma obtained by converting a gas into a plasma and a radical obtained by radicalizing the reactive gas is generated for plasma processing of the object to be processed.

  The plasma processing apparatus according to claim 2 is the plasma processing apparatus according to claim 1, wherein the radiation conductor is formed in a cylindrical shape, and the insulating tube has a state in which the tip portion protrudes from a tip of the radiation conductor. In the radiation conductor.

  The plasma processing apparatus according to claim 3 is the plasma processing apparatus according to claim 1, wherein the radiation conductor is formed in a cylindrical shape, and a tip thereof is at the open end of the casing or in the vicinity of the open end. The insulating tube is disposed in the radiation conductor in a state where the tip reaches the tip of the radiation conductor or in the vicinity of the tip, and the reactive gas supply path is It is formed by a gap formed between the inner peripheral surface of the radiation conductor and the outer peripheral surface of the insulating tube.

  5. The plasma processing method according to claim 4, wherein in the state in which a gas comprising any one or more of an inert gas, a nitrogen gas, and an air gas is supplied into the insulating tube, the one gasified into the insulating tube. A primary plasma is generated by the gas composed of the above, and the primary plasma is emitted from the tip portion of the insulating tube, and the reactive gas is supplied to the emitted primary plasma, thereby converting the reactive gas into plasma. At least one of the secondary plasma and the radical obtained by radicalizing the reactive gas is generated, and the object to be processed is plasma-treated by at least one of the generated secondary plasma and radical.

  According to the plasma processing apparatus of claim 1 and the plasma processing method of claim 4, the primary plasma is generated in the insulating tube, and the primary plasma is emitted from the tip of the insulating tube to the outside of the casing. It is possible to reliably prevent the conductor and the case from being altered or the like (deterioration or etching) by the primary plasma. In addition, the primary plasma generated in the insulating tube is a gas made of any one or more of an inert gas, a nitrogen gas and an air gas, but not a reactive gas. In addition, alteration of the insulating tube due to plasma can be greatly reduced. In addition, secondary plasma and radicals for plasma treatment of the object to be treated are released from the casing into the reactive gas atmosphere outside the casing to convert the reactive gas into plasma or radicals. Therefore, it is possible to prevent a situation where the insulating tube, the radiation conductor, and the housing are altered by secondary plasma or radicals. Thereby, durability of the plasma processing apparatus used for the plasma processing method can be improved.

  According to the plasma processing apparatus of claim 2, the electric field strength is maximized by disposing the insulating tube in a state where the tip portion protrudes from the tip of the radiation conductor in the cylindrical radiation conductor. As a result of always being able to dispose the insulating tube near the tip of the radiation conductor, primary plasma and thus secondary plasma can be efficiently generated, and the efficiency of the plasma processing on the object to be processed can be improved.

  According to the plasma processing apparatus of the third aspect, the radiation conductor is formed in a cylindrical shape, the tip is erected so as to reach the open end of the housing or in the vicinity of the open end, and the insulating tube has the tip radiating. The reactive gas supply path is configured by a gap formed between the inner peripheral surface of the radiating conductor and the outer peripheral surface of the insulating tube, which is disposed in the radiating conductor so as to reach the tip of the conductor or in the vicinity of the tip. Therefore, unlike the configuration in which the entire housing is used as the reactive gas supply path, a smaller-diameter radiation conductor is used as the reactive gas supply path to react within a narrow range including the part to be plasma processed in the object to be processed. Since the atmosphere of the reactive gas can be formed pinpoint, plasma treatment can be performed with a small amount of reactive gas.

1 is a configuration diagram of a plasma processing apparatus 1 (a cross-sectional view taken along a central axis X for a housing 11). FIG. 2 is a cross-sectional view taken along line W1-W1 in FIG. 1 (a cross-sectional view excluding the coaxial connector 12). 1 is a configuration diagram of a plasma processing apparatus 1A (a cross-sectional view taken along a central axis X for a housing 11). FIG. 4 is a cross-sectional view taken along line W2-W2 in FIG. 3 (a cross-sectional view excluding the coaxial connector 12). It is a block diagram (it is sectional drawing in alignment with the central axis X about the housing | casing 11) of the plasma processing apparatus 1B. It is a block diagram (Cross sectional view along the central axis X about the housing | casing 11) of 1 C of plasma processing apparatuses. It is a block diagram (it is sectional drawing along a central axis about the insulating tube 11c) of plasma processing apparatus 1D.

  Embodiments of a plasma processing method and a plasma processing apparatus will be described below with reference to the accompanying drawings.

  First, a plasma processing method for the processing object 6 using the plasma processing apparatus 1 shown in FIG. 1 will be described.

  First, the plasma processing apparatus 1 will be described. The plasma processing apparatus 1 includes a high frequency power source 2, a plasma generator 3, and a table 4. In addition, the plasma processing apparatus 1 generates a primary plasma P1 in the plasma generating unit 3 by supplying the high frequency signal S1 generated in the high frequency power source 2 to the plasma generating unit 3 through the coaxial cable 5 and generates the primary plasma P1. The primary plasma P <b> 1 that has been made is configured to be able to be emitted to the outside of the plasma generator 3.

  The high frequency power supply 2 generates a high frequency signal (for example, a quasi microwave of about 2.45 GHz) S1 in a quasi-microwave band (1 GHz to 3 GHz) or a microwave band (3 GHz to 30 GHz) with a predetermined power, and plasma It functions as a high-frequency signal generation unit that outputs to the generation unit 3. In this example, the high-frequency power supply 2 employs a configuration that outputs the quasi-microwave as the high-frequency signal S1, but a configuration that outputs the microwave as the high-frequency signal S1 can also be employed. Further, a matching unit may be provided between the high frequency power source 2 and the plasma generating unit 3 in order to increase the supply efficiency of the high frequency signal S1 from the high frequency power source 2 to the plasma generating unit 3.

  As shown in FIG. 1 as an example, the plasma generating unit 3 includes a casing 11, a coaxial connector 12, a feeding conductor 13, and a radiator (antenna) 14 as a radiation conductor. The housing 11 includes, as an example, a conductive cylinder 11a that opens at both ends, a conductive blocking plate 11b, and an insulating tube 11c, and one end (the upper end in FIG. 1) is closed, and The other end (the lower end in FIG. 1) is formed as an open end to form a torch-type housing, and a ground potential is applied to all other components except the insulating tube 11c. .

  Specifically, as shown in FIG. 1, the casing 11 is a closed body in which one end portion (upper end portion in FIG. 1) of the cylindrical body 11a is disposed in close contact with the one end portion. It is configured as a torch-type housing that is closed by the plate 11b and whose other end becomes an open end. Further, as shown in FIG. 2, the cylindrical body 11a has a quadrangular cross section on the outer peripheral surface along a plane orthogonal to the central axis X (that is, the outer shape is a rectangular cylindrical body). Since the cross-sectional shape of the peripheral surface is circular, it substantially functions as a cylindrical body. Further, as shown in FIG. 1, the cylinder 11a is defined to have a length (cylinder length) longer than the length L1 of the radiator 14, and the tip of the radiator 14 protrudes from the open end of the cylinder 11a. It has a configuration that does not.

  In this example, as shown in FIG. 1, a through hole 21 for introducing a high-frequency signal S <b> 1 into the housing 11 is formed in the cylinder 11 a. Further, as an example, the closing plate 11b is formed with a through hole 22 through which an insulating tube 11c for supplying plasma discharge gas G1 (hereinafter also referred to as “discharge gas G1”) is inserted. In this case, the position of the through hole 22 is defined such that the central axis thereof is coaxial with the central axis X of the cylinder 11a (that is, at the center of the blocking plate 11b). In this example, as the discharge gas G1, an inert gas having a low ionization voltage and easily generating plasma (for example, a single gas selected from argon, neon, xenon, or helium, or a mixed gas of a plurality of gases), nitrogen gas And a gas composed of at least one of air gas (hereinafter also referred to as “inert gas or the like”) is used. The insulating tube 11c is formed so that its outer diameter is slightly smaller than the inner diameter of the through hole 22, and as shown in FIGS. 1 and 2, the central axis thereof is coaxial with the central axis X of the cylindrical body 11a. The protruding length from the inner surface of the blocking plate 11b is defined to be substantially the same as the entire length of the cylindrical body 11a. Thereby, the edge part (end part located in the opening edge side of the cylinder 11a) which protruded from the radiator 14 in the insulating tube 11c is in the same state as this opening edge. As a material of the insulating tube 11c, for example, yttria, aluminum nitride, boron nitride, or the like can be used. In this case, in terms of fluorine plasma resistance, yttria is most preferable, followed by high etching resistance in the order of aluminum nitride and boron nitride. On the other hand, as for thermal shock resistance, on the contrary, boron nitride is most preferable, and thermal shock resistance is higher in the order of aluminum nitride and yttria. Of course, the insulating tube 11c may be manufactured using quartz.

  As shown in FIG. 1, the coaxial connector 12 is attached to the outer peripheral surface of the cylindrical body 11 a so as to close the through-hole 21 while being attached to the tip of the coaxial cable 5 connected to the high-frequency power source 2. ing. For example, as shown in FIGS. 1 and 2, the power supply conductor 13 is formed in a rod shape (substantially straight rod shape) using a highly conductive wire, and one end side is connected to the core wire 12 a of the coaxial connector 12. At the same time, the other end is connected to the feeding position A of the radiator 14. In this case, the power feeding position A is defined as a position separated from the base end portion fixed to the closing plate 11b in the radiator 14 by a predetermined distance L2. Here, the predetermined distance L2 is preferably defined in a range of λ / 10 ≧ L2> 0, where λ is the wavelength of the high-frequency signal S1. As a result, the radiator 14, the closing plate 11b connected to the radiator 14 and the feed conductor 13 constitute an inverted F-shaped antenna, which reduces the change in VSWR before and after plasma generation (ignition), as will be described later. This is a possible configuration. Note that, in the configuration in which the predetermined distance L2 exceeds λ / 10, the VSWR before plasma generation begins to deteriorate as described later (that is, the ignitability of plasma starts to decrease). For this reason, L2 is preferably λ / 10 or less.

  The radiator 14 is formed in a rod shape (in this example, a cylinder) using a conductive material. Specifically, as shown in FIGS. 1 and 2, the radiator 14 is formed in a cylindrical shape (in this example, a cylindrical shape) whose inner diameter is defined to be equal to or larger than the inner diameter of the through-hole 22, and its central axis is It is erected on the inner surface of the closing plate 11b so as to be coaxial with the central axis X of the cylindrical body 11a (standing in an electrically connected state). With this configuration, the inside of the radiator 14 is in communication with the through hole 22, and the insulating tube 11 c inserted through the through hole 22 is also inserted into the radiator 14. Further, the length L1 of the radiator 14 is defined as ((1/4 + n / 2) × λ). Here, n is an integer greater than or equal to 0. In this example, n = 0 is set as an example, and the length L1 of the radiator 14 is (λ / 4. The frequency of the high-frequency signal S1 is 2.45 GHz as an example. Therefore, it is defined as 122.45 mm / 4 = 30.6 mm).

  As shown in FIG. 1, the table 4 is disposed to face the other end (opening end) of the housing 11, and the processing object 6 is placed on the surface (mounting surface) on the housing 11 side. It is configured so that it can be placed. In this example, as an example, the mounting surface of the table 4 is formed on a plane orthogonal to the central axis X of the cylindrical body 11a.

  Next, a plasma processing method using the plasma processing apparatus 1 will be described together with the operation of the plasma processing apparatus 1. As shown in FIG. 1, the processing object 6 is placed on the table 4 under an atmosphere of plasma processing gas (hereinafter, “processing gas”) G2 (a range surrounded by an alternate long and short dash line). It shall be. In this case, a reactive gas is used as the processing gas G2, and depending on the type of plasma processing, an oxidizing gas such as carbon dioxide and dinitrogen monoxide, a reducing gas such as hydrogen and ammonia, and four fluorines are used. It is selected from fluorine-based gases such as hydromethane.

  First, supply of the discharge gas G1 from the first gas supply unit (not shown) into the insulating tube 11c is started. As a result, the discharge gas G1 is released to the outside of the open end of the cylindrical casing 11 through the insulating tube 11c introduced into the plasma generation unit 3 (inside the cylinder 11a). In the supply state of the discharge gas G1, the output (supply) of the high frequency signal S1 from the high frequency power source 2 to the plasma generating unit 3 is started. The high-frequency signal S1 output from the high-frequency power source 2 is supplied from the power supply position A to the radiator 14 via the coaxial cable 5, the coaxial connector 12, and the power supply conductor 13. Thereby, the radiator 14 prescribed | regulated to the length L1 of (lambda) / 4 resonates with the high frequency signal S1. The radiator 14 in the resonance state operates as a resonance monopole, and the voltage is maximized on the tip end (lower end in FIG. 1) located on the opening end side of the housing 11. For this reason, the electric field intensity becomes maximum near the tip of the radiator 14 in the plasma generating unit 3 (near the tip) (the radiator 14 emits the high-frequency signal S1). As a result, in the vicinity of the tip of the radiator 14 in the insulating tube 11c to which the discharge gas G1 that is likely to generate plasma is supplied, the discharge gas G1 is generated by the high-intensity electric field applied from the outside of the insulating tube 11c. The plasma is generated and primary plasma P1 is generated.

  In this case, since the high frequency power supply 2 supplies a quasi-microwave or microwave to the plasma generator 3 as the high frequency signal S1, the primary plasma P1 is generated in a high density state. Further, since the discharge gas G1 supplied into the insulating tube 11c is discharged to the outside from the tip end portion (end portion on the opening end side of the housing 11) of the insulating tube 11c, primary plasma generated in the insulating tube 11c. As shown in FIG. 1, P1 is also emitted from the tip of the insulating tube 11c while extending along the length direction of the insulating tube 11c (along the central axis X of the cylinder 11a). Further, the radiator 14 and the plasma generator 3 (specifically, the cylinder 11a) are separated from the primary plasma P1 by the insulating tube 11c (the primary plasma P1 is not in direct contact with the primary plasma P1). Alteration or the like due to the plasma P1 is prevented.

  Subsequently, the processing object 6 placed on the table 4 is irradiated with the primary plasma P1 emitted from the distal end portion of the insulating tube 11c in the atmosphere of the processing gas G2. By irradiating the processing gas G2 with the primary plasma P1, the processing gas G2 collided with the primary plasma P1 is turned into plasma or radical, and as shown conceptually in FIG. At least one of secondary plasma and radicals (hereinafter also referred to as “secondary plasma or the like”) P <b> 2 is generated around. Thereby, the process target object 6 is surface-treated by secondary plasma etc. P2. This surface treatment includes an etching process, a sterilization process, a cleaning process, a hydrophilicity improving process, and the like on the surface of the processing object 6. In addition, since this secondary plasma etc. P2 is generated outside the plasma generating part 3 (outside of the insulating tube 11c and the cylinder 11a), the secondary plasma etc. of the insulating tube 11c and the cylinder 11a are altered by the P2 etc. It is prevented.

  At this time, due to the fact that the primary plasma P1 itself has conductivity, the apparent length (electric length) of the radiator 14 is before plasma generation (the length of the radiator 14 only) and after plasma generation. It varies depending on (the length of the radiator 14 and the total length of the primary plasma P1). Therefore, in the conventional plasma processing apparatus, the resonance frequency of the plasma generator 3 before and after the generation of the primary plasma P1 changes greatly. For this reason, according to experiments by the inventors (experiment when the frequency of the high-frequency signal S1 is 2.45 GHz and the length L1 of the radiator 14 is λ / 4 (= 30.6 mm)), before plasma generation ( When the length L1 of the radiator 14 is defined with respect to the resonance frequency before ignition), it becomes inconsistent after plasma generation (after ignition) and compared with VSWR (12.4) before plasma generation. It was confirmed that VSWR (61.5) after plasma generation was greatly deteriorated.

  On the other hand, in the plasma processing apparatus 1, as described above, the power feeding position A of the high-frequency signal S1 is defined at a position separated from the closing plate 11b in the radiator 14 by a predetermined distance L2. Therefore, as an example, the predetermined distance L2 is changed to 2 mm (= λ / 61.2), 3 mm (= λ / 40.8), and 4 mm (= λ / 30.6) to change the VSWR before and after plasma generation. When measured, the measured VSWR before plasma generation and VSWR after plasma generation at each predetermined distance L2 are (11.1, 18.6), (13.1, 17.4), (18. 5 and 17), and at least in the range of λ / 30.6 ≧ L2 ≧ λ / 61.2, it is almost the same value as all VSWR (VSWR before plasma generation) in the alignment state in the conventional plasma processing apparatus (all VSWR was less than 20). As a result, it was confirmed that the change in VSWR before and after plasma generation was significantly reduced to a level where it could be said that the change in VSWR before and after plasma generation did not change substantially compared to the conventional plasma processing apparatus. That is, in the plasma processing apparatus 1, it was confirmed that a good alignment state was maintained before and after plasma generation. The reason for this is that the high-frequency signal S1 fed from the feeding position A causes the path from the proximal end of the radiator 14 to the distal end of the radiator 14 and the path transmitted from the feeding position A to the distal end of the radiator 14. Since resonance occurs in two paths, it is considered that one of the causes is that the Q of the radiator 14 becomes broad (broadband).

  As the predetermined distance L2 is increased to 2 mm, 3 mm, and 4 mm, the VSWR after the plasma generation is maintained almost constant from 18.6 to 17.4, 17 (slightly decreased), but before the plasma generation. The VSWR tends to gradually increase from 11.1 to 13.1, 18.5 (plasma ignitability decreases). For this reason, it is considered that if the predetermined distance L2 to the power feeding position A is too long, the VSWR before the plasma generation is further increased and the ignitability of the plasma is lowered. For this reason, it is considered that the predetermined distance L2 is preferably λ / 10 or less at the longest.

  As described above, in the plasma processing apparatus 1 and the plasma processing method using the plasma processing apparatus 1, the tip portion is outside the open end of the cylindrical casing 11 in which the radiator 14 is erected. The discharge gas G1, which is an inert gas, is discharged through the insulating tube 11c introduced into the housing 11 so as to reach the open end of the housing 11, and the high frequency signal S1 is supplied to the radiator 14 in this state. As a result, a primary plasma P1 made of an inert gas converted into plasma is generated in the insulating tube 11c, and the primary plasma P1 is emitted from the tip of the insulating tube 11c, and this primary plasma P1 is used as a reactive gas. By colliding with the gas G2, the processing gas G2 is converted into plasma to generate secondary plasma or the like P2, and the object to be processed 6 is surface-treated with the secondary plasma or the like P2. That.

  Therefore, according to the plasma processing apparatus 1 and the plasma processing method using the plasma processing apparatus 1, an electric field generated in the radiator 14 disposed outside the insulating tube 11c is supplied into the insulating tube 11c. Thus, the primary plasma P1 is generated in the insulating tube 11c and the primary plasma P1 is emitted from the distal end portion of the insulating tube 11c to the outside of the casing 11, so that the radiator 14 and the casing 11 are altered by the primary plasma P1. Can be reliably prevented. Further, the primary plasma P1 generated in the insulating tube 11c is a plasma generated from the discharge gas G1, which is an inert gas, and is not a plasma generated from the processing gas G2, which is a reactive gas. Deterioration of the insulating tube 11c due to plasma can be significantly reduced. Further, the secondary plasma P2 for plasma processing the processing object 6 is generated by the collision between the primary plasma P1 emitted from the casing 11 and the processing gas G2 outside the casing 11. It is possible to prevent a situation in which the insulating tube 11c, the radiator 14 and the casing 11 are altered by the secondary plasma or the like P2. Thereby, durability of the plasma processing apparatus 1 used for the plasma processing method can be improved.

  In addition, as described above, the secondary plasma or the like P2 is generated by emitting the primary plasma P1 to the processing object 6 in the atmosphere of the processing gas G2 to thereby convert the processing gas G2 into plasma or radical. In a state where the primary plasma P1 is released to the processing target body 6, a configuration in which the processing gas G2 is supplied to the processing target body 6 to generate secondary plasma or the like P2 may be employed.

  The above-described plasma processing apparatus 1 does not have a function of moving the processing object 6 to the atmosphere of the processing gas G2, but the plasma generating unit 3 performs processing from the plasma processing apparatus 1A shown in FIG. It is also possible to adopt a configuration in which the processing object 6 is transferred to the atmosphere of the processing gas G2 by releasing the processing gas G2 and forming an atmosphere of the processing gas G2 outside the open end of the housing 11. it can. Hereinafter, the plasma processing apparatus 1A will be described.

  First, the configuration of the plasma processing apparatus 1A will be described. In addition, about the same structure as the plasma processing apparatus 1, the same code | symbol is attached | subjected and the overlapping description is abbreviate | omitted and only a different structure is demonstrated.

  A plasma processing apparatus 1A shown in FIG. 3 includes a high-frequency power source 2, a plasma generation unit 3A, and a table 4. It is configured identically. Below, the structure of 3 A of plasma generation parts which differ is demonstrated, the same code | symbol is attached | subjected about the same structure, and the overlapping description is abbreviate | omitted.

  As shown in FIG. 3 and FIG. 4 as an example, the plasma generator 3A includes a casing 31, a coaxial connector 12, a feed conductor 13, and a radiator 14. As an example, the housing 31 includes a conductive cylinder 11a that is open at both ends, a conductive blocking plate 11b, and an insulating tube 11c. One end of the cylinder 11a (upper end in FIG. 3) is provided. By being closed by the closing plate 11b, the other end portion (lower end portion in FIG. 3) of the cylindrical body 11a is formed at an open end to constitute a torch type housing. Further, in the casing 31, another through hole 23 for supplying the processing gas G <b> 2 is formed in the closing plate 11 b together with the through hole 22 for inserting the insulating tube 11 c for supplying the discharge gas G <b> 1. Yes. In this example, as an example, an insulating tube 24 for supplying the processing gas G2 to the housing 31 is connected to the through hole 23. With this configuration, the casing 31, specifically, the cylinder 11 a functions as a reactive gas supply path as will be described later.

  Next, a plasma processing method using the plasma processing apparatus 1A will be described together with the operation of the plasma processing apparatus 1A. In addition, description is abbreviate | omitted about the part same as operation | movement of the above-mentioned plasma processing method and the plasma processing apparatus 1, and a different part is demonstrated.

  First, the processing object 6 is placed on the table 4 disposed opposite to the open end of the housing 31. In this state, the processing object 6 is not yet in the atmosphere of the processing gas G2.

  Subsequently, supply of the discharge gas G1 from the first gas supply unit (not shown) into the insulating tube 11c is started, and supply of the processing gas G2 from the second gas supply unit (not shown) into the insulation tube 24 is started. Start. As a result, the processing gas G2 supplied into the plasma generating unit 3A (inside the cylinder 11a) via the insulating tube 24 and the through hole 23 is opened at the open end (the lower end of the cylinder 11a). Part) to the outside (lower part). As a result, as shown in FIG. 3, an atmosphere of the processing gas G <b> 2 (a range surrounded by an alternate long and short dash line) is formed outside (in front of) the open end of the housing 31. For this reason, the surface region including the part to be surface-treated in the processing object 6 placed on the table 4 is covered with the atmosphere of the processing gas G2 (under the atmosphere of the processing gas G2). Become). Further, the discharge gas G1 supplied into the insulating tube 11c is introduced into the atmosphere of the processing gas G2 from the tip of the insulating tube 11c (tip positioned on the opening end side of the housing 31; the lower end in FIG. 3). To be released.

  Subsequently, output (supply) of the high-frequency signal S1 from the high-frequency power source 2 to the plasma generating unit 3A is started in the supply state of both the gases G1 and G2. As a result, in the same manner as in the plasma processing apparatus 1, the electric field strength is maximized in the vicinity of the tip of the radiator 14 (near the tip) in the plasma generating unit 3A, so that the inside of the insulating tube 11c to which the discharge gas G1 is supplied. In the vicinity of the tip of the radiator 14 in FIG. 1, the discharge gas G1 is turned into plasma, and primary plasma P1 is generated. In this case, the discharge gas G1 supplied into the insulating tube 11c is discharged to the outside from the distal end portion of the insulating tube 11c, and the processing gas G2 is also approximately from the open end of the housing 31 to the central axis X of the cylindrical body 11a. As shown in FIG. 3, the primary plasma P1 generated in the insulating tube 11c is emitted from the distal end portion of the insulating tube 11c while extending along the length direction of the insulating tube 11c. The Further, the radiator 14 and the plasma generator 3A (specifically, the cylinder 11a) are separated from the primary plasma P1 by the insulating tube 11c, so that alteration or the like due to the primary plasma P1 is prevented.

  Further, the primary plasma P1 released from the tip of the insulating tube 11c is released into the atmosphere of the processing gas G2, so that the processing gas G2 collided with the primary plasma P1 is turned into plasma, As shown in FIG. 3, the secondary plasma P2 is generated around the primary plasma P1. Thereby, the process target object 6 is surface-treated by secondary plasma etc. P2. In this case, the secondary plasma etc. P2 is generated outside the plasma generator 3A (outside of the insulating tube 11c and the cylinder 11a), so that the alteration of the insulating tube 11c and the cylinder 11a by the secondary plasma etc. P2 is prevented. Has been.

  As described above, the plasma processing apparatus 1A and the plasma processing method using the plasma processing apparatus 1A also supply the electric field generated in the radiator 14 disposed outside the insulating tube 11c into the insulating tube 11c. Thus, the primary plasma P1 is generated in the insulating tube 11c, and the primary plasma P1 is emitted from the tip of the insulating tube 11c to the outside of the casing 31, so that the radiator 14 and the casing 31 are altered by the primary plasma P1. The situation where it is equal can be prevented reliably. Further, the primary plasma P1 generated in the insulating tube 11c is a plasma generated from the discharge gas G1, which is an inert gas, and is not a plasma generated from the processing gas G2, which is a reactive gas. Deterioration of the insulating tube 11c due to plasma can be significantly reduced. In addition, since the secondary plasma P2 or the like for plasma processing the processing object 6 is generated by the collision of the primary plasma P1 emitted from the casing 31 and the processing gas G2 outside the casing 31, A situation in which the insulating tube 11c, the radiator 14 and the casing 31 are altered by the secondary plasma or the like P2 can also be reliably prevented. Thereby, durability of the plasma processing apparatus 1A used for the plasma processing method can be improved. Further, by forming the radiator 14 in a cylindrical shape and disposing the insulating tube 11c in the radiator 14, the insulating tube 11c can always be disposed in the vicinity of the tip of the radiator 14 at which the electric field strength becomes maximum. In addition, the primary plasma P1, and thus the secondary plasma P2 and the like can be generated efficiently, and the efficiency of the plasma processing on the processing object 6 can be improved.

  In the plasma processing apparatus 1A, the processing gas G2 is released to the outside (front) of the open end of the casing 31 through the cylinder 11a constituting the casing 31 (with the inside of the cylinder 11a as a flow path). However, like the plasma processing apparatus 1B shown in FIG. 5, the processing gas G2 is passed through the inside of the radiator 14 formed in a cylindrical shape to the outside of the open end of the casing 31 (front side). ) To form an atmosphere of the processing gas G2 outside the open end of the housing 32. Hereinafter, the plasma processing apparatus 1B will be described.

  First, the configuration of the plasma processing apparatus 1B will be described. In addition, about the same structure as 1 A of plasma processing apparatuses, the same code | symbol is attached | subjected and the overlapping description is abbreviate | omitted and only a different structure is demonstrated.

  A plasma processing apparatus 1B shown in FIG. 5 includes a high-frequency power source 2, a plasma generation unit 3B, and a table 4, except that the plasma generation unit 3B is different from the plasma generation unit 3A of the plasma processing apparatus 1A. It is configured identically. Below, the structure of the different plasma generation part 3B is demonstrated, the same code | symbol is attached | subjected about the same structure, and the overlapping description is abbreviate | omitted.

  As shown in FIG. 5 as an example, the plasma generator 3B includes a housing 32, a coaxial connector 12, a feed conductor 13, and a radiator 14. As an example, the housing 32 includes a conductive cylinder 11a that opens at both ends, a conductive blocking plate 11b, and an insulating tube 11c. One end of the cylinder 11a (the upper end in FIG. 5) is provided. By being closed by the closing plate 11b, the other end portion (lower end portion in FIG. 5) of the cylindrical body 11a is formed at an open end to constitute a torch type housing. In the housing 32, the through-hole 22 for inserting the insulating tube 11c for supplying the discharge gas G1 and the other through-hole 23 for supplying the processing gas G2 are formed in the closing plate 11b. Yes. In this example, as an example, the through-hole 23 is connected to an insulating tube 24 for supplying the processing gas G2. Moreover, in the housing | casing 32, as shown in FIG. 5 as an example, while the through-hole 22 is formed in the outer surface side area | region B in the obstruction board 11b in a slightly larger diameter than the outer diameter of the insulation pipe | tube 11c, The inner diameter of the area C on the inner surface side of the blocking plate 11b is slightly larger than the outer diameter of the radiator 14 (larger than the inner diameter of the area B). Further, the through hole 23 opens in a region C on the inner surface of the blocking plate 11 b that constitutes the through hole 22.

  As shown in FIG. 5, the radiator 14 has an end portion (upper end portion in FIG. 5) inserted into the inner surface of the blocking plate 11 b in the region C of the through hole 22, and the central axis thereof is the cylindrical body 11 a. It is erected in such a state that it is coaxial with the central axis X and its tip (lower end in the figure) reaches the open end of the housing 32 or near the open end. In addition, a through hole (or notch) 14a is formed at the upper end portion of the radiator 14, and the internal region of the radiator 14 is in communication with the through hole 23 through the through hole 14a. . Further, as shown in the figure, the insulating tube 11c inserted into the region B of the through hole 22 is also inserted into the radiator 14 so that the tip reaches the tip of the radiator 14 or the vicinity of the tip. Yes. Thereby, the reactive gas supply path 25 (the inner peripheral surface of the radiator 14 and the insulating tube 11c is provided between the inner peripheral surface of the radiator 14 having a double tube structure and the outer peripheral surface of the insulating tube 11c. Formed by a gap between the outer peripheral surface and a flow path reaching from the upper end to the lower end of the radiator 14, and the reactive gas supply path 25 is connected via a through hole 14 a formed in the radiator 14. It will be in the state connected with the through-hole 23. FIG.

  Next, a plasma processing method using the plasma processing apparatus 1B will be described together with the operation of the plasma processing apparatus 1B. In addition, description is abbreviate | omitted about the same part as operation | movement of the above-mentioned plasma processing method and plasma processing apparatuses 1 and 1A, and a different part is demonstrated.

  First, the processing object 6 is placed on the table 4 disposed opposite to the open end of the housing 32. In this state, the processing object 6 is not yet in the atmosphere of the processing gas G2.

  Subsequently, supply of the discharge gas G1 from the first gas supply unit (not shown) into the insulating tube 11c is started, and supply of the processing gas G2 from the second gas supply unit (not shown) into the insulation tube 24 is started. Start. Thereby, the processing gas G2 passes through the insulating tube 24, the through hole 23, the through hole 14a of the radiator 14, and the reactive gas supply path 25 from the lower end side of the radiator 14 to the open end of the housing 32. As shown in FIG. 5, an atmosphere of the processing gas G <b> 2 (a range surrounded by a one-dot chain line) is formed outside (in front of) the open end of the housing 32. For this reason, the surface region including the part to be surface-treated in the processing object 6 placed on the table 4 is covered with the atmosphere of the processing gas G2 (under the atmosphere of the processing gas G2). Become). In this case, unlike the plasma processing apparatus 1A that uses the cylinder 11a as the reactive gas supply path, the radiator 14 having a smaller diameter is used as the reactive gas supply path, so that the atmosphere of the processing gas G2 is used for the plasma processing. It is formed pinpoint in the required narrow part. Further, the discharge gas G1 supplied into the insulating tube 11c is introduced into the atmosphere of the processing gas G2 from the tip of the insulating tube 11c (tip positioned on the opening end side of the housing 32; the lower end in FIG. 5). To be released.

  Subsequently, output (supply) of the high-frequency signal S1 from the high-frequency power source 2 to the plasma generating unit 3B is started in the supply state of both the gases G1 and G2. As a result, in the same manner as in the plasma processing apparatuses 1 and 1A, the electric field strength is maximized near the tip of the radiator 14 (near the tip) in the plasma generating unit 3B, so that the discharge gas G1 is supplied. In the vicinity of the tip of the radiator 14 in the insulating tube 11c, the discharge gas G1 is turned into plasma and primary plasma P1 is generated. In this case, the discharge gas G1 supplied into the insulating tube 11c is discharged to the outside from the tip of the insulating tube 11c, and the processing gas G2 also extends along the central axis X of the cylindrical body 11a from the open end of the radiator 14. As shown in FIG. 5, the primary plasma P1 generated in the insulating tube 11c is emitted from the tip of the insulating tube 11c while extending along the length direction of the insulating tube 11c. . Further, the radiator 14 and the plasma generator 3B (specifically, the cylinder 11a) are separated from the primary plasma P1 by the insulating tube 11c, so that alteration or the like due to the primary plasma P1 is prevented.

  Further, the primary plasma P1 released from the tip of the insulating tube 11c is released into the atmosphere of the processing gas G2, so that the processing gas G2 collided with the primary plasma P1 is turned into plasma, As shown in FIG. 5, the secondary plasma P2 is generated around the primary plasma P1. Thereby, the process target object 6 is surface-treated by secondary plasma etc. P2. In this case, the secondary plasma etc. P2 is generated outside the plasma generator 3B (outside of the insulating tube 11c and the cylinder 11a), so that the alteration of the insulating tube 11c and the cylinder 11a by the secondary plasma etc. P2 is prevented. Has been.

  As described above, the plasma processing apparatus 1B and the plasma processing method using the plasma processing apparatus 1B also supply the electric field generated in the radiator 14 disposed outside the insulating tube 11c into the insulating tube 11c. As a result, primary plasma P1 is generated in the insulating tube 11c, and the primary plasma P1 is emitted from the tip of the insulating tube 11c to the outside of the housing 32. Therefore, the radiator 14 and the housing 32 are altered by the primary plasma P1. The situation where it is equal can be prevented reliably. Further, the primary plasma P1 generated in the insulating tube 11c is a plasma generated from the discharge gas G1, which is an inert gas, and is not a plasma generated from the processing gas G2, which is a reactive gas. Deterioration of the insulating tube 11c due to plasma can be significantly reduced. In addition, secondary plasma or the like P2 for plasma processing the object 6 to be processed is generated by the collision between the primary plasma P1 emitted from the casing 32 and the processing gas G2 outside the casing 32. The situation where the insulating tube 11c, the radiator 14 and the casing 32 are altered by the secondary plasma or the like P2 can also be reliably prevented. Thereby, durability of the plasma processing apparatus 1B used for the plasma processing method can be improved. Further, unlike the plasma processing apparatus 1A that uses the casing 31 (cylinder 11a) as the reactive gas supply path, the plasma in the processing object 6 is obtained by using the radiator 14 having a smaller diameter as the reactive gas supply path. Since the atmosphere of the processing gas G2 can be pinpointed in a narrow range including the region to be processed, plasma processing can be performed with a small amount of the processing gas G2.

  Moreover, in said plasma processing apparatus 1, 1A, 1B, the radiator 14 is comprised in a cylindrical body (cylindrical rod-shaped body), the structure which inserts the insulating tube 11c in the inside, and the obstruction | occlusion in the radiator 14 Both of the configurations for supplying the high-frequency signal S1 to the feeding position A separated by a predetermined distance L2 from the base end portion fixed to the plate 11b via the feeding conductor 13 (configuration configured as an inverted F-shaped antenna) are employed. However, the radiator 14 is configured as a columnar body as another example of the rod-shaped body, and the insulating tube 11c is disposed outside the radiator 14, and the plasma disclosed in Patent Document 1 described in the background art. As in a processing apparatus (microwave plasma generator), at least one of the configurations in which the power supply conductor 13 is bent at right angles to the direction of the closing plate 11b in the cylindrical body 11a and the tip thereof is connected to the closing plate 11b. adopt And it can also be. In the following, referring to FIG. 6, these two configurations are divided into a configuration in which the radiator 14 is a cylindrical body, and a power supply that is separated by a predetermined distance L <b> 2 from a base end portion fixed to the closing plate 11 b in the radiator 14. A plasma processing apparatus 1 </ b> C employed instead of the configuration for supplying the high-frequency signal S <b> 1 to the position A via the power supply conductor 13 will be described.

  First, the configuration of the plasma processing apparatus 1C will be described. Note that the plasma processing apparatus 1C has a configuration similar to the configuration of the plasma processing apparatus 1A among the plasma processing apparatuses 1, 1A, and 1B described above. The description which overlaps is abbreviate | omitted and only a different structure is demonstrated.

  As an example, as shown in FIG. 6, the plasma generating unit 3 </ b> C includes a housing 33, a coaxial connector 12, a power supply conductor 13, and a radiator 14. As an example, the housing 33 includes a conductive cylinder 11a that opens at both ends, a conductive blocking plate 11b, and an insulating tube 11c. One end of the cylinder 11a (upper end in FIG. 5) is provided. By being closed by the closing plate 11b, the other end portion (lower end portion in FIG. 5) of the cylindrical body 11a is formed at an open end to constitute a torch type housing. In addition, the closing plate 11b is formed with another through hole 23 for supplying the processing gas G2 together with the through hole 22 for inserting the insulating tube 11c for supplying the discharge gas G1. An insulating tube 24 for supplying the processing gas G2 is connected to the through hole 23. With this configuration, the casing 31, specifically, the cylinder 11 a functions as a reactive gas supply path. Moreover, as shown in FIG. 6, the through-hole 22 is formed in the position away from the central axis X of the cylinder 11a. As shown in the figure, the insulating tube 11c is inserted into the through hole 22 so as to be parallel to the central axis X of the cylinder 11a, and the protruding length from the inner surface of the blocking plate 11b is substantially equal to the total length of the cylinder 11a. It is prescribed to the same length. Thereby, the edge part by the side of the opening end of the cylinder 11a in the insulating tube 11c is substantially flush with the opening end.

  As shown in FIG. 6, the power supply conductor 13 is configured as a coupling group in which a conductive rod-like body is bent into an L shape (in this example, bent at a right angle). Specifically, the feed conductor 13 has an end on the radiator 14 side connected to the closing plate 11 b and the other end connected to a core wire (not shown) of the coaxial connector 12. In this state, a portion (a portion bent at a right angle) 13a on the radiator 14 side of the power supply conductor 13 is in a state of standing up at a right angle from the blocking plate 11b (a state parallel to the central axis X of the cylinder 11a). In addition, when the wavelength of the high-frequency signal S1 is λ, the length L3 is defined as a length equal to or less than half of λ / 4 (in this example, λ / 10 as an example). As shown in FIG. 6, the radiator 14 is composed of one conductive columnar body (in this example, a cylindrical body) having a length L1, and is located on the central axis X of the cylindrical body 11a. It is erected on the inner surface of the closing plate 11b.

  Next, a plasma processing method using the plasma processing apparatus 1C will be described together with the operation of the plasma processing apparatus 1C. In addition, description is abbreviate | omitted about the processing content of the plasma processing method using the above-mentioned plasma processing apparatus 1A, and the same part as operation | movement of 1 A of plasma processing apparatuses, and a different part is demonstrated.

  First, the processing object 6 is placed on the table 4 disposed opposite to the open end of the housing 33. In this state, the processing object 6 is not yet in the atmosphere of the processing gas G2.

  Subsequently, supply of the discharge gas G1 from the first gas supply unit (not shown) into the insulating tube 11c is started, and supply of the processing gas G2 from the second gas supply unit (not shown) into the insulation tube 24 is started. Start. As a result, the processing gas G2 supplied into the plasma generating unit 3C (inside the cylinder 11a) is discharged from the open end of the cylindrical casing 33 to the outside as shown in FIG. An atmosphere of the processing gas G2 (a range surrounded by a one-dot chain line) is formed outside (in front of) the open end of the body 33. For this reason, the surface region including the part to be surface-treated in the processing object 6 placed on the table 4 is covered with the atmosphere of the processing gas G2 (under the atmosphere of the processing gas G2). Become). Further, the discharge gas G1 supplied into the insulating tube 11c is introduced into the atmosphere of the processing gas G2 from the tip of the insulating tube 11c (tip positioned on the opening end side of the housing 33; the lower end in FIG. 6). To be released.

  Subsequently, output (supply) of the high-frequency signal S1 from the high-frequency power source 2 to the plasma generating unit 3C is started in the supply state of both the gases G1 and G2. In this case, when the high-frequency signal S1 flows through the feed conductor 13, a magnetic field is generated around the portion 13a on the radiator 14 side of the feed conductor 13, and the radiator 14 defined by the length L1 described above is caused by this magnetic field. Resonates. The radiator 14 in the resonance state operates as a resonance monopole, and the voltage becomes maximum at the tip of the radiator 14 (the lower end in FIG. 6). For this reason, since the electric field strength becomes maximum near the tip of the radiator 14 (near the tip), the discharge gas G1 is plasma in the vicinity of the tip of the radiator 14 in the insulating tube 11c to which the discharge gas G1 is supplied. The primary plasma P1 is generated. In this case, the discharge gas G1 supplied into the insulating tube 11c is discharged to the outside from the distal end portion of the insulating tube 11c, and the processing gas G2 also extends from the open end of the housing 33 along the central axis X of the cylindrical body 11a. As shown in FIG. 6, the primary plasma P1 generated in the insulating tube 11c is also emitted from the tip of the insulating tube 11c while extending along the length direction of the insulating tube 11c. . Further, the radiator 14 and the plasma generating unit 3C (specifically, the cylinder 11a) are separated from the primary plasma P1 by the insulating tube 11c, so that alteration or the like due to the primary plasma P1 is prevented.

  Further, the primary plasma P1 released from the tip of the insulating tube 11c is released into the atmosphere of the processing gas G2, so that the processing gas G2 collided with the primary plasma P1 is turned into plasma, As shown in FIG. 6, the secondary plasma P2 is generated around the primary plasma P1. Thereby, the process target object 6 is surface-treated by secondary plasma etc. P2. In this case, the secondary plasma etc. P2 is generated outside the plasma generating part 3C (outside of the insulating tube 11c and the cylinder 11a), so that the alteration of the insulating tube 11c and the cylinder 11a by the secondary plasma etc. P2 is prevented. Has been.

  As described above, the plasma processing apparatus 1C and the plasma processing method using the plasma processing apparatus 1C also supply the electric field generated in the radiator 14 disposed outside the insulating tube 11c into the insulating tube 11c. As a result, primary plasma P1 is generated in the insulating tube 11c, and the primary plasma P1 is emitted from the distal end portion of the insulating tube 11c to the outside of the housing 33. Therefore, the radiator 14 and the housing 33 are altered by the primary plasma P1. It is possible to prevent a situation where they are equalized. Further, the primary plasma P1 generated in the insulating tube 11c is a plasma generated from the discharge gas G1, which is an inert gas, and is not a plasma generated from the processing gas G2, which is a reactive gas. Deterioration of the insulating tube 11c due to plasma can be significantly reduced. Further, the secondary plasma P2 for plasma processing the processing object 6 is generated outside the casing 33 due to the collision between the primary plasma P1 emitted from the casing 33 and the processing gas G2. It is also possible to prevent a situation in which the insulating tube 11c, the radiator 14 and the housing 33 are altered by the secondary plasma or the like P2. Thereby, durability of the plasma processing apparatus 1C used for the plasma processing method can be improved.

  Further, according to the plasma processing apparatuses 1, 1A, 1B, and 1C described above, the primary plasma P1 is generated in the insulating tube 11c and radiated to the outside of the plasma generators 3, 3A, 3B, and 3C. Since the diameter of P1 can be defined by the inner diameter of the insulating tube 11c, by reducing the inner diameter of the insulating tube 11c, the diameter of the primary plasma P1, and thus the secondary plasma generated by the collision with the primary plasma P1, etc. P2 Therefore, only a narrow range on the surface of the processing object 6 can be surface-treated.

  Further, in the plasma processing apparatuses 1A and 1C described above, a configuration in which the processing gas G2 is supplied from the through hole 23 formed in the closing plate 11b to the inside of the cylindrical body 11a is employed. The structure arrange | positioned in the body 11a is also employable. Further, the number of the through holes 23 for supplying the processing gas G2 is not limited to one, and a configuration in which two or more through holes 23 are disposed may be employed.

  Moreover, although the plasma processing method using the plasma processing apparatus 1 has been described above, the plasma processing method can also be performed using a plasma processing apparatus other than the plasma processing apparatus 1 (for example, the plasma processing apparatus 1D shown in FIG. 7). Can do. Hereinafter, a plasma processing method using the plasma processing apparatus 1D will be described.

  First, the configuration of the plasma processing apparatus 1D will be described. In addition, about the structure same as the plasma processing apparatus 1, the same code | symbol is attached | subjected and the overlapping description is abbreviate | omitted. The plasma processing apparatus 1D includes a high-frequency power source 2, a plasma generator 3D, and a table 4.

  The plasma processing apparatus 1D generates a primary plasma P1 in the insulating tube 11c of the plasma generating unit 3D by supplying a high frequency signal S1 generated by the high frequency power source 2 to the plasma generating unit 3D, and the generated primary plasma. P1 can be discharged to the outside of the plasma generation unit 3D. As an example, the plasma generator 3D includes an insulating tube 11c and a pair of electrodes 15a and 15b as shown in FIG. Further, as shown in the figure, the pair of electrodes 15a and 15b are disposed at positions facing each other with the insulating tube 11c interposed therebetween, and are connected to the high frequency power source 2.

  Next, a plasma processing method using the plasma processing apparatus 1D will be described together with the operation of the plasma processing apparatus 1D. As shown in FIG. 7, it is assumed that the processing object 6 is placed on the table 4 under the atmosphere of the processing gas G2 (a range surrounded by a one-dot chain line).

  First, supply of the discharge gas G1 from the first gas supply unit (not shown) into the insulating tube 11c is started. As a result, the discharge gas G1 is released from the distal end portion of the insulating tube 11c (the lower end portion in the drawing, the end portion on the processing object 6 side). In the supply state of the discharge gas G1, supply of the high frequency signal S1 from the high frequency power source 2 to the pair of electrodes 15a and 15b is started. As a result, the electric field strength at the portion sandwiched between the pair of electrodes 15a and 15b in the inner region of the insulating tube 11c is increased, so that the discharge gas G1 is turned into plasma at this portion to generate the primary plasma P1, and the insulating tube It is discharged outside from the tip of 11c. In this case, since the pair of electrodes 15a and 15b are separated from the primary plasma P1 by the insulating tube 11c, alteration or the like due to the primary plasma P1 is prevented.

  Next, the primary plasma P1 emitted from the tip of the insulating tube 11c is irradiated to the processing object 6 placed on the table 4 in the atmosphere of the processing gas G2. By irradiating the processing gas G2 with the primary plasma P1, the processing gas G2 collided with the primary plasma P1 is turned into plasma or radical, and as shown conceptually in FIG. Secondary plasma or the like P2 is generated around the. Thereby, the process target object 6 is surface-treated by secondary plasma etc. P2. As described above, also in the plasma processing method using the plasma processing apparatus 1D, the secondary plasma or the like P2 is generated outside the insulating tube 11c, so that the alteration or the like of the insulating tube 11c due to the secondary plasma or the like P2 is prevented. Can do. The plasma processing apparatus 1D employs a configuration in which the primary plasma P1 is generated by supplying the high frequency signal S1 between the pair of electrodes 15a and 15b. However, a DC power source is used instead of the high frequency power source 2. Thus, it is possible to adopt a configuration in which the primary plasma P1 is generated by applying a DC voltage between the pair of electrodes 15a and 15b. Further, instead of the pair of electrodes 15a and 15b, one electrode 15a is used, a high frequency signal S1 is output from one output terminal of the high frequency power source 2 to one electrode 15a, and the other output terminal of the high frequency power source 2 is used as a reference. A configuration of connecting to a potential (for example, a ground potential) can be employed. Moreover, in each said plasma processing apparatus 1-1D, although the structure provided with the table 4 was employ | adopted, as long as the process target body 6 can be arrange | positioned in the atmosphere of the process gas G2, various tables other than the table 4 are used. And containers can be used.

1, 1A, 1B, 1C, 1D Plasma processing apparatus 2 High-frequency power supply 3, 3A, 3B, 3C, 3D Plasma generating unit 6 Processed object 11, 31, 32, 33 Case 11b Blocking plate 13 Feeding conductor 14 Radiator 15a 15b A pair of electrodes G1 Discharge gas G2 Processing gas P1 Primary plasma P2 Secondary plasma S1 High frequency signal

Claims (4)

A cylindrical housing in which a ground potential is applied and one end is closed by a closing plate, and the other end is formed at an open end;
A rod-shaped radiation conductor erected on the inner surface of the closing plate so as to extend along the cylinder length direction of the housing;
A gas composed of any one or more of inert gas, nitrogen gas, and air gas is transported to the open end of the casing through the casing, and from the tip located near the open end With an insulating tube that discharges to the outside of the housing,
The housing is configured to include a reactive gas supply path that discharges a reactive gas supplied to the inside from the open end to the outside and forms a reactive gas atmosphere in front of the open end.
By radiating a high-frequency signal supplied to the radiation conductor, primary plasma is generated by the one or more gases formed into plasma in the insulating tube, and the generated primary plasma is generated at the tip of the insulating tube. Plasma processing of the object to be processed is performed by discharging at least one of the secondary plasma obtained by converting the reactive gas into plasma and the radical obtained by radicalizing the reactive gas by releasing the reactive gas into the reactive gas atmosphere. Plasma processing equipment to generate for. The radiation conductor is formed in a cylindrical shape,
The plasma processing apparatus according to claim 1, wherein the insulating tube is disposed in the radiation conductor in a state in which the tip portion protrudes from the tip of the radiation conductor. The radiation conductor is formed in a cylindrical shape, and is erected so that a tip reaches the open end of the housing or the vicinity of the open end,
The insulating tube is disposed in the radiation conductor in a state where the tip portion reaches the tip of the radiation conductor or the vicinity of the tip.
The plasma processing apparatus according to claim 1, wherein the reactive gas supply path is formed by a gap formed between an inner peripheral surface of the radiation conductor and an outer peripheral surface of the insulating tube. In a state where any one or more of inert gas, nitrogen gas and air gas is supplied into the insulating tube, primary plasma is generated by the one or more gases formed into plasma in the insulating tube. ,
The primary plasma is emitted from the distal end portion of the insulating tube, and the reactive gas is supplied to the emitted primary plasma to thereby convert the reactive gas into a secondary plasma, and the reactive gas. Generating at least one of radicals that have been radicalized,
A plasma processing method of performing plasma processing on a processing object at least one of the generated secondary plasma and radicals.

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