JP2010199479A - Metalized film capacitor - Google Patents
Metalized film capacitor Download PDFInfo
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- JP2010199479A JP2010199479A JP2009045198A JP2009045198A JP2010199479A JP 2010199479 A JP2010199479 A JP 2010199479A JP 2009045198 A JP2009045198 A JP 2009045198A JP 2009045198 A JP2009045198 A JP 2009045198A JP 2010199479 A JP2010199479 A JP 2010199479A
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- 239000011104 metalized film Substances 0.000 title claims abstract description 40
- 239000003990 capacitor Substances 0.000 title claims abstract description 32
- 239000010408 film Substances 0.000 claims abstract description 29
- 238000007740 vapor deposition Methods 0.000 claims description 44
- 238000009413 insulation Methods 0.000 claims description 11
- 230000002349 favourable effect Effects 0.000 abstract 1
- 239000002184 metal Substances 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 11
- 230000020169 heat generation Effects 0.000 description 6
- 238000005192 partition Methods 0.000 description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 206010037660 Pyrexia Diseases 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
- H01G4/015—Special provisions for self-healing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/14—Organic dielectrics
- H01G4/145—Organic dielectrics vapour deposited
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/32—Wound capacitors
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
Description
この発明は、誘電体フィルムに蒸着電極を形成した金属化フィルムを巻回又は積層してなる金属化フィルムコンデンサに関する。 The present invention relates to a metallized film capacitor formed by winding or laminating a metallized film having a deposited electrode formed on a dielectric film.
保安機能を持たせた従来の金属化フィルムコンデンサの一例を、図５及び図６に示している（例えば、特許文献１参照）。このコンデンサは、一対となる第１及び第２金属化フィルム３１Ａ、３１Ｂを重ね合わせた構造のものである。両金属化フィルム３１Ａ、３１Ｂは、略同様のものであるため、ここでは便宜上、第１金属化フィルム３１Ａについて説明する。この第１金属化フィルム３１Ａには、その長手方向に沿う一側部に絶縁マージン３２が形成されており、絶縁マージン３２とは反対側の側部は、メタリコン電極３０が形成される接続部３３となされている。また、第１金属化フィルム３１Ａの接続部３３の近傍には、絶縁スリット３４が長手方向に断続的に設けられていて、絶縁スリット３４、３４間にヒューズ部３５が形成されている。そして、この断続的に設けられた絶縁スリット３４の中央部と絶縁マージン３２とを結ぶように幅方向に延びる分割スリット３６を、長手方向に所定の間隔で並設することによって、金属化フィルム３１Ａに複数の分割電極３７が形成されている。そして、このような構造の第１金属化フィルム３１Ａと第２金属化フィルム３１Ｂとを、絶縁マージン３２が互いに逆の側部に位置するように重ね合わせて、巻回又は積層することによって金属化フィルムコンデンサが形成されている。このとき、相対向する一対の分割電極で単位コンデンサが構成される。また、近年では、特に良好な保安性を要求されるコンデンサにおいては、その容量を形成する有効電極部の蒸着電極膜抵抗を高くし、接続部３３の蒸着電極膜抵抗を低くしたヘビーエッジ構造が採用されている。 An example of a conventional metalized film capacitor having a security function is shown in FIGS. 5 and 6 (see, for example, Patent Document 1). This capacitor has a structure in which a pair of first and second metallized films 31A and 31B are overlapped. Since both the metallized films 31A and 31B are substantially the same, the first metallized film 31A will be described here for convenience. In this first metallized film 31A, an insulating margin 32 is formed on one side along the longitudinal direction, and a side portion on the opposite side to the insulating margin 32 is a connecting portion 33 on which the metallicon electrode 30 is formed. It has been. Further, in the vicinity of the connection portion 33 of the first metallized film 31 </ b> A, an insulation slit 34 is intermittently provided in the longitudinal direction, and a fuse portion 35 is formed between the insulation slits 34 and 34. Then, by dividing the slits 36 extending in the width direction so as to connect the central portion of the insulating slit 34 provided intermittently and the insulating margin 32, the metallized film 31A is arranged in parallel in the longitudinal direction at a predetermined interval. A plurality of divided electrodes 37 are formed. Then, the first metallized film 31A and the second metallized film 31B having such a structure are overlapped so that the insulation margins 32 are located on opposite sides, and are wound or stacked to be metallized. A film capacitor is formed. At this time, a unit capacitor is constituted by a pair of opposed divided electrodes. Further, in recent years, a capacitor that requires particularly good security has a heavy edge structure in which the vapor deposition electrode film resistance of the effective electrode portion that forms the capacitance is increased and the vapor deposition electrode film resistance of the connection portion 33 is decreased. It has been adopted.
ところで、上記特許文献１に記載された金属化フィルムコンデンサにおいては、ヒューズ部３５がメタリコン電極３０に近い部分に配置されているので、大きな電流が流れることになり、この結果、ヒューズ部３５での発熱が大きくなってしまうという欠点が生じる。また、このような構造では、ＥＳＲ（等価直列抵抗）が大きくなるが、ＥＳＲ（等価直列抵抗）を低減させるために、単に蒸着金属の厚みを厚く形成すると、蒸着電極の自己回復性を損なう虞がある。さらに、ヘビーエッジ構造のコンデンサにおいて、安定したヒューズ動作を行わせるためには、ヒューズ部３５が蒸着金属厚さの厚い接続部３３に形成されるのを防止するのが好ましいが、このような構造を確保するには高い加工精度を要求されるという製造上の問題もある。 By the way, in the metallized film capacitor described in the above-mentioned Patent Document 1, since the fuse portion 35 is disposed in a portion close to the metallicon electrode 30, a large current flows. There is a disadvantage that heat generation becomes large. Further, in such a structure, ESR (equivalent series resistance) increases, but if the thickness of the deposited metal is simply increased in order to reduce ESR (equivalent series resistance), the self-recoverability of the deposited electrode may be impaired. There is. Further, in a heavy edge capacitor, in order to perform stable fuse operation, it is preferable to prevent the fuse portion 35 from being formed in the connection portion 33 having a thick deposited metal thickness. There is also a manufacturing problem that high machining accuracy is required to ensure the above.
そこで、この発明は、上記の不具合を解消して、良好な保安機能を確保しつつＥＳＲ（等価直列抵抗）を低減できる金属化フィルムコンデンサを提供することを目的とする。 Accordingly, an object of the present invention is to provide a metallized film capacitor capable of reducing ESR (equivalent series resistance) while eliminating the above-described problems and ensuring a good security function.
上記課題を解決するため、本発明の金属化フィルムコンデンサは、誘電体フィルムの一方の端部に絶縁マージン４を設け、他方の端部にメタリコン電極１３との接続部５を形成した第１蒸着電極３Ａを誘電体フィルムの一方側に配置し、誘電体フィルムの他方の端部に絶縁マージン４を設け、一方の端部にメタリコン電極１３との接続部５を形成した第２蒸着電極３Ｂを誘電体フィルムの他方側に配置して、前記第１蒸着電極３Ａ及び第２蒸着電極３Ｂの有効電極幅のほぼ中央部に絶縁スリット７を誘電体フィルムの長手方向に断続して設けてヒューズ部９を形成し、前記絶縁スリット７から前記絶縁マージン４に向かう側には、長手方向に第１分割電極１１を配置し、前記絶縁スリット７から前記接続部５に向かう側には長手方向に第２分割電極１２を配置するとともに、前記第２分割電極１２の蒸着電極の厚みを前記第１分割電極１１の蒸着電極の厚みより厚くし、前記第１分割電極１１と前記第２分割電極１２とが誘電体フィルムを介して対向するように構成したことを特徴としている。 In order to solve the above-described problems, the metallized film capacitor of the present invention is a first vapor deposition in which an insulating margin 4 is provided at one end of a dielectric film and a connecting portion 5 to a metallicon electrode 13 is formed at the other end. An electrode 3A is disposed on one side of the dielectric film, an insulating margin 4 is provided at the other end of the dielectric film, and a second vapor deposition electrode 3B having a connection portion 5 to the metallicon electrode 13 is formed at one end. Arranged on the other side of the dielectric film, an insulating slit 7 is provided intermittently in the longitudinal direction of the dielectric film at the center of the effective electrode width of the first vapor deposition electrode 3A and the second vapor deposition electrode 3B. 9, the first divided electrode 11 is disposed in the longitudinal direction on the side from the insulating slit 7 toward the insulating margin 4, and the first segmented electrode 11 is disposed in the longitudinal direction on the side from the insulating slit 7 toward the connecting portion 5. 2 minutes The electrode 12 is disposed, the thickness of the vapor deposition electrode of the second divided electrode 12 is made larger than the thickness of the vapor deposition electrode of the first divided electrode 11, and the first divided electrode 11 and the second divided electrode 12 are dielectric. It is characterized by comprising so that it may oppose through a body film.
また、前記第２分割電極１２の幅が前記第１分割電極１１の幅より広いことを特徴としている。 Further, the width of the second divided electrode 12 is wider than the width of the first divided electrode 11.
さらに、前記第２分割電極１２を区分するマージンの一方端部を接続部５と有効電極部の境界部近傍に設け、かつ、前記第２分割電極１２は、その接続部５側の端部の全幅をそのまま接続部５に接続したことを特徴としている。 Furthermore, one end of a margin for dividing the second divided electrode 12 is provided in the vicinity of the boundary between the connection portion 5 and the effective electrode portion, and the second divided electrode 12 is provided at the end of the connection portion 5 side. It is characterized in that the entire width is connected to the connecting portion 5 as it is.
この発明の金属化フィルムコンデンサにおいては、第２分割電極の蒸着電極の厚みを第１分割電極の蒸着電極の厚みより厚くしている、すなわち、低抵抗の蒸着電極を金属化フィルムの略中央部まで形成していることで、ＥＳＲ（等価直列抵抗）が低下し、耐電流性が向上するとともに、メタリコン電極との接続部近傍の誘電体フィルムの膨張が抑えられ、耐熱衝撃性を向上させることができる。また、第１分割電極を薄く、第２分割電極を厚く形成し、両者を対向させることで、厚く形成され低抵抗となった第２分割電極の自己回復のし難さを、薄く形成され高抵抗となった第１分割電極によってカバーすることができる。 In the metallized film capacitor of the present invention, the thickness of the vapor-deposited electrode of the second divided electrode is thicker than the thickness of the vapor-deposited electrode of the first divided electrode. As a result, the ESR (equivalent series resistance) is reduced, the current resistance is improved, and the expansion of the dielectric film in the vicinity of the connection with the metallicon electrode is suppressed, thereby improving the thermal shock resistance. Can do. In addition, by forming the first divided electrode thin and the second divided electrode thick and opposing the two, the second divided electrode, which is formed thick and has low resistance, is less likely to be self-healing. It can be covered by the first divided electrode that becomes a resistor.
また、メタリコン電極に近い部分には大きな電流が流れ、離れるほど電流は小さくなっていくものであるから、第２分割電極の幅を第１分割電極の幅より広く形成することで、大きな電流に対応可能となる。また、ヒューズ部の動作を確実なものにして保安機能を向上できる。 In addition, since a large current flows in a portion close to the metallicon electrode and the current decreases as the distance increases, forming the second divided electrode wider than the first divided electrode results in a large current. It becomes possible to respond. In addition, it is possible to improve the security function by ensuring the operation of the fuse portion.
さらに第２分割電極を、その接続部側の端部の全幅をそのまま接続部に接続しているので、接続部を分割してメタリコン電極に接続する場合に比べて、ＥＳＲ（等価直列抵抗）を小さくすることができる。 Furthermore, since the entire width of the end portion on the connection portion side of the second divided electrode is connected to the connection portion as it is, ESR (equivalent series resistance) is reduced compared to the case where the connection portion is divided and connected to the metallicon electrode. Can be small.
以下、この発明の実施形態を図面に基づいて詳細に説明する。この発明の第１の実施形態に係る金属化フィルムコンデンサは、図１及び図３に示すように、一対となる第１及び第２金属化フィルム１Ａ、１Ｂを重ね合わせた構造のものである。両金属化フィルム１Ａ、１Ｂは、第１及び第２誘電体フィルム２Ａ、２Ｂにアルミや亜鉛等からなる第１及び第２蒸着電極３Ａ、３Ｂを蒸着したもので、両者は略同様なものであるため、ここでは便宜上、第１金属化フィルム１Ａについて説明する。 Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. The metallized film capacitor according to the first embodiment of the present invention has a structure in which a pair of first and second metallized films 1A and 1B are superposed as shown in FIGS. Both metallized films 1A and 1B are obtained by vapor-depositing first and second vapor-deposited electrodes 3A and 3B made of aluminum, zinc or the like on the first and second dielectric films 2A and 2B, and both are substantially the same. Therefore, here, for convenience, the first metallized film 1A will be described.
第１蒸着電極３Ａは、容量を形成する有効電極部となる蒸着電極からなり、その長手方向に沿う一側部に絶縁マージン４（蒸着金属の無い部分）を、また絶縁マージン４の反対側の他側部にメタリコン電極１３が接続される接続部５が夫々形成されている。また、接続部５側の蒸着電極が、絶縁マージン４側の蒸着電極よりも厚みを厚く形成されており、図３に示すように、接続部５と絶縁マージン４の略中間部において蒸着電極の厚みが切り替えられている。なお、蒸着電極の厚みは一様な厚みでなくても良く、図４に示すように、接続部５側の蒸着電極の厚みが絶縁マージン４側の蒸着電極の厚みより厚くなるように傾斜蒸着しても良い。また、第１蒸着電極３Ａには、幅方向に延びる分割マージン６（蒸着金属の無い部分）が形成され、第１蒸着電極３Ａは、長手方向に所定間隔で分割されている。さらに、上記有効電極部の略中央部に、絶縁スリット７（蒸着金属の無い部分）が長手方向に所定の間隔を置いて断続的に設けられている。 The first vapor deposition electrode 3A is composed of a vapor deposition electrode serving as an effective electrode part for forming a capacitance. The first marginal electrode 3A has an insulation margin 4 (portion without vapor deposition metal) on one side along the longitudinal direction, and the opposite side of the insulation margin 4. Connection portions 5 to which the metallicon electrodes 13 are connected are formed on the other side portions, respectively. Further, the vapor deposition electrode on the connection portion 5 side is formed to be thicker than the vapor deposition electrode on the insulation margin 4 side, and the vapor deposition electrode is formed at a substantially intermediate portion between the connection portion 5 and the insulation margin 4 as shown in FIG. The thickness has been switched. The thickness of the vapor deposition electrode does not need to be uniform, and as shown in FIG. 4, the vapor deposition electrode is inclined so that the thickness of the vapor deposition electrode on the connection portion 5 side is larger than the thickness of the vapor deposition electrode on the insulating margin 4 side. You may do it. Further, the first vapor deposition electrode 3A is formed with a division margin 6 (a portion without vapor deposition metal) extending in the width direction, and the first vapor deposition electrode 3A is divided at a predetermined interval in the longitudinal direction. Furthermore, insulating slits 7 (portions without vapor deposition metal) are provided intermittently at predetermined intervals in the longitudinal direction at substantially the center of the effective electrode portion.
また、絶縁スリット７は、３個毎に、その中央部が分割マージン６と交差している。また、残り２個の絶縁スリット７、７の中央部と絶縁マージン４との間には、幅方向に延びる区画マージン８（蒸着金属の無い部分）が形成されており、分割マージン６で分割された蒸着電極のうち、絶縁スリット７から絶縁マージン４に向かう側の蒸着電極が、さらに３個に区画されている。そして、絶縁スリット７、７間にヒューズ部９が形成されている。なお、このような状態は、絶縁スリット７が連続的に形成され、絶縁スリット７の適所に蒸着金属によってヒューズ部が形成されているとも言える。 Further, every three insulating slits 7 intersect with the division margin 6 at the center. Further, a partition margin 8 (a portion without vapor deposition metal) extending in the width direction is formed between the central portion of the remaining two insulating slits 7, 7 and the insulating margin 4, and is divided by the dividing margin 6. Among the deposited electrodes, the deposited electrode on the side from the insulating slit 7 toward the insulating margin 4 is further divided into three. A fuse portion 9 is formed between the insulating slits 7 and 7. In this state, it can be said that the insulating slit 7 is continuously formed, and the fuse portion is formed by vapor deposition metal at an appropriate position of the insulating slit 7.
上記構造を有する結果、絶縁スリット７から接続部５に向かう側には、分割マージン６によって区画された第２分割電極１２が長手方向に配置され、絶縁スリット７から絶縁マージン４に向かう側には、分割マージン６によって区画された領域をさらに区画マージン８によって３個に区画された第１分割電極１１が長手方向に配置された構造となる。すなわち、広幅の１個の第２分割電極１２に対して、狭幅の３個の第１分割電極１１が配置され、各第１分割電極１１は、第２分割電極１２にヒューズ部９を介して接続されることになる。また、第２分割電極１２の厚みは、第１分割電極１１の厚みより厚くなっている。また、第２蒸着電極３Ｂは、第１蒸着電極３Ａとは絶縁マージン４側と接続部５側とを互いに逆にして配置した構造であり、第１金属化フィルム１Ａと第２金属化フィルム１Ｂとを重ね合わせて巻回、あるいは積層することによって金属化フィルムコンデンサが形成される。 As a result of the above structure, the second divided electrode 12 partitioned by the dividing margin 6 is disposed in the longitudinal direction on the side from the insulating slit 7 toward the connection portion 5, and on the side from the insulating slit 7 toward the insulating margin 4. In addition, the first divided electrode 11 is further divided in the longitudinal direction by dividing the region divided by the division margin 6 into three pieces by the division margin 8. That is, three narrow first divided electrodes 11 are arranged with respect to one wide second divided electrode 12, and each first divided electrode 11 is connected to the second divided electrode 12 via the fuse portion 9. Will be connected. Further, the thickness of the second divided electrode 12 is thicker than the thickness of the first divided electrode 11. The second vapor deposition electrode 3B has a structure in which the insulating margin 4 side and the connection portion 5 side are arranged opposite to each other with respect to the first vapor deposition electrode 3A, and the first metallized film 1A and the second metallized film 1B. Are stacked and wound or laminated to form a metallized film capacitor.
上記第１の実施形態の金属化フィルムコンデンサにおいては、第２分割電極１２の蒸着電極の厚みを第１分割電極１１の蒸着電極の厚みより厚く、さらに第１分割電極１１より第２分割電極１２の面積を広くなるよう形成しているので、ＥＳＲ（等価直列抵抗）が低下し、耐電流性が向上するとともに、抵抗による発熱が抑えられることから、接続部５近傍の誘電体フィルム２Ａ、２Ｂの膨張が抑えられて、耐熱衝撃性を向上させることができる。また、厚く形成され低抵抗となった第２分割電極１２に、薄く形成され高抵抗の第１分割電極１１を対向させることで、第２分割電極１２の自己回復性を補助することができる。また、絶縁マージン４側にヒューズ部９及び第１分割電極１１を配置しているので、ヒューズ部９の発熱を少なくでき、温度上昇を抑制できる。また、第１蒸着電極１１と第２蒸着電極１２とに設けられるヒューズ部９が、上下方向に重なり合わないよう両金属化フィルム１Ａ、１Ｂを互いにずらして配置しているため、発熱箇所を分散でき、コンデンサの温度上昇を抑制することが可能となる。さらに、１個の第２分割電極１２に対して３個の第１分割電極１１を対応して配置してあるので、細分化された各第１分割電極１１において、各ヒューズ部９の動作が確実に行われ、保安機能を確実なものにでき、また、静電容量の低下を抑制できる。 In the metallized film capacitor of the first embodiment, the thickness of the vapor deposition electrode of the second divided electrode 12 is thicker than the thickness of the vapor deposition electrode of the first divided electrode 11, and further the second divided electrode 12 than the first divided electrode 11. Since the ESR (equivalent series resistance) is reduced, current resistance is improved, and heat generation due to the resistance is suppressed, the dielectric films 2A and 2B in the vicinity of the connecting portion 5 are formed. The thermal shock resistance can be improved. Further, the second divided electrode 12 which is formed thick and has a low resistance is opposed to the first divided electrode 11 which is formed thin and has a high resistance, so that the self-recoverability of the second divided electrode 12 can be assisted. Moreover, since the fuse part 9 and the 1st division | segmentation electrode 11 are arrange | positioned at the insulation margin 4 side, the heat_generation | fever of the fuse part 9 can be decreased and a temperature rise can be suppressed. Further, since the fuse portions 9 provided in the first vapor deposition electrode 11 and the second vapor deposition electrode 12 are arranged so that both the metallized films 1A and 1B are shifted from each other so as not to be overlapped in the vertical direction, the heat generation points are dispersed. It is possible to suppress the temperature rise of the capacitor. Further, since the three first divided electrodes 11 are arranged corresponding to one second divided electrode 12, the operation of each fuse portion 9 is performed in each subdivided first divided electrode 11. It is performed reliably, the safety function can be ensured, and the decrease in capacitance can be suppressed.
次に、第２の実施形態について詳細に説明する。この実施形態の金属化フィルムコンデンサは、図２に示すように、分割マージン６が、その一端部を接続部５と有効電極部との境界部に位置され、他端部を絶縁マージン４に重なるように形成されている。そのため、分割マージン６によって長手方向に所定の間隔で分割された第２分割電極１２は、その接続部５側の端部の全幅（分割マージン６間隔の全幅）が、そのまま接続部５と連続的に接続することになる。また、分割マージン６は、断続的に設けられた絶縁スリット７の全てに交差するように形成されている。なお、分割マージン６を除くその他の形態は、第１の実施形態と同様であり、その説明を省略している。 Next, the second embodiment will be described in detail. In the metallized film capacitor of this embodiment, as shown in FIG. 2, the division margin 6 is positioned at the boundary portion between the connection portion 5 and the effective electrode portion, and the other end portion overlaps the insulating margin 4. It is formed as follows. Therefore, the second divided electrode 12 divided by the division margin 6 in the longitudinal direction at a predetermined interval has the full width at the end on the side of the connection portion 5 (the full width of the division margin 6 interval) as it is with the connection portion 5 as it is. Will be connected to. The division margin 6 is formed so as to intersect all of the insulating slits 7 provided intermittently. The other forms excluding the division margin 6 are the same as those in the first embodiment, and the description thereof is omitted.
上記第２の実施形態の金属化フィルムコンデンサにおいては、第２分割電極１２を、その接続部５側の端部の全幅をそのまま接続部５に接続しているので、接続部５を分割してメタリコン電極１３に接続する第１の実施形態に比べて、ＥＳＲ（等価直列抵抗）をより小さくすることが可能となり、耐電流性の向上、発熱の抑制をより図ることができる。なお、分割マージン６は、第１の実施形態と同様に絶縁スリット７の複数個毎に絶縁スリット７に交差するように形成しても良い。すなわち、絶縁スリット７が、例えば３個毎に、その中央部と分割マージン６とが交差し、残り２個の絶縁スリット７、７の中央部と絶縁マージン４との間に、幅方向に延びる分割マージン６、６（第１の実施形態で示す区画マージン８と同様）が形成された状態である。 In the metalized film capacitor of the second embodiment, the second divided electrode 12 is connected to the connecting portion 5 as it is with the entire width of the end portion on the connecting portion 5 side. Compared to the first embodiment connected to the metallicon electrode 13, it is possible to make the ESR (equivalent series resistance) smaller, and it is possible to further improve the current resistance and suppress the heat generation. The division margin 6 may be formed so as to intersect the insulating slit 7 for each of the plurality of insulating slits 7 as in the first embodiment. That is, for example, every three insulating slits 7 intersect the center and the division margin 6 and extend in the width direction between the center of the remaining two insulating slits 7 and 7 and the insulating margin 4. The division margins 6 and 6 (similar to the partition margin 8 shown in the first embodiment) are formed.
以上にこの発明の具体的な実施の形態について説明したが、この発明は上記実施形態に限定されるものではなく、この発明の範囲内で種々変更して実施することが可能である。例えば、上記実施形態のように、第１誘電体フィルム２Ａに第１蒸着電極３Ａを、第２誘電体フィルム２Ｂに第２蒸着電極３Ｂをそれぞれ形成してこれらを重ね合わせて巻回又は積層してコンデンサを構成しても良いが、誘電体フィルムの両面に第１蒸着電極３Ａと第２蒸着電極３Ｂとを形成した両面金属化フィルムと、金属の蒸着されていない誘電体フィルムとを重ね合わせて巻回又は積層することによってコンデンサを構成しても良い。また、第１蒸着電極３Ａと第２蒸着電極３Ｂは、アルミや亜鉛の他にも種々の金属を用いて形成して良い。また、上記第１分割電極１１は、一段と良好なヒューズ動作性を確保するため、さらに幅方向（絶縁マージン４及び絶縁スリット７と平行）にもヒューズ部９を介して分割しても良い。さらに、ヒューズ部９は、分割マージン６や区画マージン８の適所に必要な個数だけ配置するようにしても良い。なお、第１蒸着電極３Ａと第２蒸着電極３Ｂとに設けられるヒューズ部９（及び絶縁スリット７）を幅方向にずらして配置する構造は、発熱の少ない場合には必ずしも必要なことではなく、場合によっては、互いに重ねて配置することもある。また、蒸着電極の蒸着パターンは種々あり適宜変更である。例えば、上記第１の実施形態においては、区画マージン８で分割することによって、１つの第２分割電極１２に対して３つの第１分割電極１１が対応する構造となっていたが、区画マージン８で区画することなく、１つの第２分割電極１２に対して１つの第１分割電極１１とし、絶縁スリット７を有効電極部の略中央部から絶縁マージン４方向にずらして配置することで、第２分割電極１２の面積を第１分割電極１１の面積より大となるように形成しても良い。このように、第２分割電極の面積を第１分割電極の面積より広く形成することで、大きな電流に対応可能となるとともに、ヒューズ部の動作を確実なものにして保安機能を向上できる。 Although specific embodiments of the present invention have been described above, the present invention is not limited to the above-described embodiments, and various modifications can be made within the scope of the present invention. For example, as in the above embodiment, the first vapor deposition electrode 3A is formed on the first dielectric film 2A, and the second vapor deposition electrode 3B is formed on the second dielectric film 2B, and these are overlapped and wound or laminated. A capacitor may be configured, but a double-sided metallized film in which the first vapor-deposited electrode 3A and the second vapor-deposited electrode 3B are formed on both sides of the dielectric film and a dielectric film on which no metal is vapor-deposited The capacitor may be configured by winding or stacking. Further, the first vapor deposition electrode 3A and the second vapor deposition electrode 3B may be formed using various metals other than aluminum and zinc. In addition, the first divided electrode 11 may be further divided in the width direction (parallel to the insulating margin 4 and the insulating slit 7) via the fuse portion 9 in order to ensure better fuse operation. Further, the necessary number of fuse portions 9 may be arranged at appropriate positions of the division margin 6 and the partition margin 8. The structure in which the fuse portions 9 (and the insulating slits 7) provided in the first vapor deposition electrode 3A and the second vapor deposition electrode 3B are shifted in the width direction is not necessarily required when heat generation is small. In some cases, they may be placed on top of each other. Moreover, there are various vapor deposition patterns of the vapor deposition electrode, and they are appropriately changed. For example, in the first embodiment, the first marginal electrode 8 is divided into the second marginal electrode 12 so that the first divisional electrode 11 corresponds to the second divisional electrode 12. The first slit 11 is divided into one first split electrode 11 with respect to one second split electrode 12, and the insulating slit 7 is arranged so as to be shifted in the direction of the insulating margin 4 from the substantially central portion of the effective electrode portion. You may form so that the area of the 2 divided electrode 12 may become larger than the area of the 1st divided electrode 11. Thus, by forming the area of the second divided electrode wider than the area of the first divided electrode, it is possible to cope with a large current, and the operation of the fuse portion can be ensured and the security function can be improved.
３Ａ・・第１蒸着電極、３Ｂ・・第２蒸着電極、４・・絶縁マージン、５・・接続部、７・・絶縁スリット、９・・ヒューズ部、１１・・第１分割電極、１２・・第２分割電極、１３・・メタリコン電極 3A ··· First vapor deposition electrode, 3B ··· Second vapor deposition electrode, 4 · · Insulation margin, 5 · · Connection portion, 7 · · Insulation slit, 9 · · Fuse portion, · · · 1 divided electrode, · · ·・ Second divided electrode, 13 ・ ・ Metallicone electrode
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