JP2010183491A - Method for manufacturing package for piezoelectric vibrator - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a package for a piezoelectric vibrator, wherein diffusion of a bonding film component to a wiring metal is appropriately suppressed. <P>SOLUTION: The present invention relates to the method for manufacturing the package for the piezoelectric vibrator wherein a first substrate and a second substrate are bonded through a bonding film, including: a conductive layer laminating step S3 for laminating a conductive layer having electroconductivity on a surface of the first substrate; a first resist laminating step S4 for laminating a pattern of first resist containing a first resist ink on an upper surface of the conductive layer continuously to the conductive layer laminating step S3; a conductive layer patterning step S5 for forming the conductive layer in a pattern of the same shape as the pattern of the first resist continuously to the first resist laminating step; and a film forming step S6 for laminating the bonding film on the first substrate and an upper surface of the pattern of the first resist continuously to the conductive layer patterning step. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a method for manufacturing a package of a piezoelectric vibrator.

  2. Description of the Related Art In recent years, a piezoelectric vibrator using a crystal or the like is used as a time source, a timing source such as a control signal, a reference signal source, and the like in mobile phones and portable information terminal devices. Various piezoelectric vibrators of this type are known, and one of them is a surface-mount type piezoelectric vibrator. As this type of piezoelectric vibrator, a three-layer structure type is generally known in which a piezoelectric substrate on which a piezoelectric vibrating piece is formed is joined so as to be sandwiched from above and below by a base substrate and a lid substrate. In this case, the piezoelectric vibrating piece is accommodated in a cavity (sealed chamber) formed between the base substrate and the lid substrate.

  In recent years, a two-layer structure type has been developed instead of the three-layer structure type described above. This type of piezoelectric vibrator has a two-layer structure in which a base substrate and a lid substrate are directly joined, and a piezoelectric vibrating piece is accommodated in a cavity formed between the two substrates. This two-layer structure type piezoelectric vibrator is excellent in that it can produce a thin piezoelectric vibrator package as compared with a three-layer structure, and is preferably used.

  As this type of piezoelectric vibrator, as shown in the following Patent Document 1, a through hole is provided in a substrate (base substrate) made of glass or ceramics, and the inner surface of the through hole and the upper and lower surfaces around the through hole or any one of them are provided. A metal for wiring is formed on the part by patterning or the like, and an alloy is welded to the through hole to form an airtight terminal. There is known a configuration in which electrical connection is made through a wiring metal. According to this configuration, a predetermined drive voltage can be applied to the piezoelectric vibrating piece from the outside of the piezoelectric vibrator via the airtight terminal, that is, the through electrode portion that is an electrode formed so as to penetrate the substrate. .

  By the way, in the conventional method for manufacturing a package of a piezoelectric vibrator, a metal for wiring is formed on the base substrate, and an alloy for joining the base substrate and the lid substrate is included on the base substrate including the metal for wiring. A bonding film, which is a metal film, is formed and manufactured.

JP-A-6-283951

  However, in the above conventional manufacturing method, the bonding film may be formed on the surface of the wiring metal in the process of forming the wiring metal and the bonding film in a pattern on the base substrate. In this case, there is a problem that components contained in the bonding film may diffuse into the wiring metal due to the heat treatment in the manufacturing process, thereby affecting the properties of the wiring metal.

The present invention has been made in view of the above-described circumstances, and an object thereof is to provide a method for manufacturing a package of a piezoelectric vibrator capable of suitably suppressing diffusion of a bonding film component to a wiring metal. .

In order to solve the above problems, the present invention proposes the following means.
A method of manufacturing a piezoelectric vibrator package according to the present invention is a method of manufacturing a piezoelectric vibrator package in which a first substrate and a second substrate are bonded via a bonding film, and the method is provided on a surface of the first substrate. A conductive layer laminating step of laminating a conductive layer having electrical conductivity; and a first resist laminating step of laminating a pattern of a first resist containing a first resist ink on an upper surface of the conductive layer following the conductive layer laminating step. A conductive layer patterning step for forming the conductive layer in the same shape as the pattern of the first resist following the first resist layering step; and the first substrate and the first after the conductive layer patterning step. And a film forming step of laminating the bonding film on the upper surface of the resist pattern.

  According to the present invention, since the bonding film is stacked on the upper surface of the first resist in a state where the pattern of the first resist is stacked on the upper surface of the conductive layer, the first resist is interposed between the conductive layer and the bonding film. Intervening layers. Therefore, in the step after the film forming step, the component of the bonding film reaches the upper surface of the conductive layer by the first resist layer, and the upper surface of the conductive layer is prevented from diffusing the bonding film component by the first resist. Protected. As a result, it is possible to suppress the diffusion of the bonding film components on the upper surface of the conductive layer.

In the method for manufacturing a piezoelectric vibrator package according to the present invention, the conductive layer laminating step includes a first layer laminating in which a first layer having high adhesion to the first substrate is laminated on the surface of the first substrate. Preferably, the method includes a step and a second layer laminating step of laminating a second layer having a bump bonding region to which the bump is bonded to the upper surface of the first layer.
In this case, the adhesiveness between the first substrate and the conductive layer can be improved by interposing the first layer having high adhesiveness with the first substrate between the surface of the first substrate and the second layer. .

In the method for manufacturing a piezoelectric vibrator package according to the present invention, the second layer preferably contains gold.
In this case, since the second layer contains gold, the electrical conductivity is high and the corrosion resistance is high.

The method for manufacturing a package of a piezoelectric vibrator of the present invention includes a second resist laminating step of laminating a second resist pattern including a second resist ink on the upper surface of the bonding film after the film forming step, It is preferable to have a bonding film patterning step for forming the bonding film in the same shape as the pattern of the second resist after the second resist laminating step.
In this case, the bonding film can be formed in a predetermined shape that is the same shape as the pattern of the second resist by the second resist lamination step and the bonding film patterning step.

In addition, the method for manufacturing a piezoelectric vibrator package according to the present invention preferably includes a resist removal step of removing both the first resist and the second resist after the bonding film patterning step.
In this case, the first resist is removed after the bonding film is patterned, so that the bonding film does not contact the upper surface of the conductive layer. Therefore, the diffusion amount of the bonding film component on the upper surface of the conductive layer can be kept low.

Also, in the method for manufacturing a piezoelectric vibrator package according to the present invention, the resist removing step applies a resist stripping solution to the first resist and the second resist on the first substrate. And an Ar plasma ashing step for cleaning the surface of the conductive layer.
In this case, after peeling off the first resist and the second resist, the surface of the conductive layer is washed, and the first resist and the second resist remaining on the surface of the conductive layer can be removed. For this reason, it is possible to suppress an adverse effect on bonding properties such as bumps on the surface of the conductive layer.

A method for manufacturing a piezoelectric resonator package of the present invention, the resist removing step, to clean the surface of the conductive layer to remove the first resist and the second resist on the first substrate O ₂ It is preferable to have a plasma ashing process.
In this case, the removal of the resist and the cleaning of the surface of the conductive layer are simultaneously performed by the O ₂ plasma ashing process. Therefore, the manufacturing process can be simplified.

According to the piezoelectric vibrator package manufacturing method of the present invention, since the upper surface of the conductive layer is protected from diffusion of the bonding film component by the first resist, diffusion of the bonding film component to the conductive layer, which is a metal for wiring, is performed. Can be suitably suppressed.
Furthermore, since the first resist for patterning the conductive layer is also used as a layer for protecting the conductive layer, no additional process is required to protect the conductive layer, and the manufacturing method is complicated. The quality of the conductive layer can be kept high while suppressing this.

It is a perspective view showing a piezoelectric vibrator of one embodiment of the present invention. It is side surface sectional drawing of the same piezoelectric vibrator. It is a perspective view which decomposes | disassembles and shows the same piezoelectric vibrator. It is a perspective view which shows one process in the manufacturing method of the package of the piezoelectric vibrator of this invention. It is sectional drawing which shows one process of the manufacture in the manufacturing method. It is sectional drawing which shows one process of the manufacture in the manufacturing method. It is sectional drawing which shows one process of the manufacture in the manufacturing method. It is sectional drawing which shows one process of the manufacture in the manufacturing method. It is sectional drawing which shows one process of the manufacture in the manufacturing method. It is a flowchart which shows the process of the manufacture in the manufacturing method. It is a flowchart which shows the process of the manufacture in the manufacturing method. It is a flowchart which shows the process of the manufacture in the manufacturing method. It is a flowchart which shows the process of the manufacture in the modification of the manufacturing method.

Hereinafter, a schematic configuration of a piezoelectric vibrator according to an embodiment of the present invention will be described with reference to FIGS. 1 to 3.
FIG. 1 is a perspective view showing the piezoelectric vibrator 1. As shown in FIG. 1, the piezoelectric vibrator 1 includes a base package (first substrate) 2 and a lid substrate (second substrate) 3 that form a two-layer box-shaped package 5. The base substrate 2 and the lid substrate 3 are transparent insulating substrates made of a glass material, for example, soda-lime glass, and are formed in a plate shape having a size that can be superimposed on each other. In addition, two external electrode portions 38 and 39 are provided on the outer surface of the base substrate 2 so as to be spaced apart from each other in the longitudinal direction.

  In addition, a bonding film 35 is interposed between the base substrate 2 and the lid substrate 3, and the base substrate 2 and the lid substrate 3 are airtightly bonded. In the present embodiment, the bonding film 35 can be configured to contain a metal such as aluminum, an alloy of chromium and silicon, or titanium.

  FIG. 2 is a side sectional view of the piezoelectric vibrator 1. As shown in FIG. 2, a recess 3 a is formed in the lid substrate 3, and a cavity C is formed between the base substrate 2 and the lid substrate 3. Inside the cavity C are housed an internal electrode portion 36 formed on the base substrate 2 and a piezoelectric vibrating piece 4 electrically connected to the internal electrode portion 36. A metal bump B is used for connection between the internal electrode portion 36 and the piezoelectric vibrating piece 4. For the metal bump B, a material having electrical conductivity such as solder or gold can be used.

  In addition, the base substrate 2 is provided with through electrode portions 32 and 33 arranged so as to penetrate in the thickness direction of the base substrate 2. One end of each of the through electrode portions 32 and 33 is electrically connected to the internal electrode portions 36 and 37, and the other end is formed on the outer surface of the base substrate 2 and is electrically connected to the lead wiring portions 40a and 41a. ing.

  The through electrode part 32 has a conductive core part 7 and a cylindrical body 6 filled around the core part 7 in through holes 30 and 31 that penetrate in the thickness direction of the base substrate 2. . In the present embodiment, the through holes 30 and 31 are formed as frustoconical holes in which the inner diameter of the base substrate 2 on the cavity C side is narrowed. The cylindrical body 6 is for supporting the core part 7 and sealing the through holes 30 and 31, and can be formed by firing, for example, a paste-like glass frit.

  FIG. 3 is an exploded perspective view showing the piezoelectric vibrator 1. As shown in FIG. 3, on the base substrate 2, the internal electrode portion 36 is connected to the through-electrode portions 32 and 33 directly or through a lead wiring portion 36 c on the base substrate 2. The piezoelectric vibrating piece 4 is a tuning fork type vibrating piece formed of a piezoelectric material such as quartz, lithium tantalate, or lithium niobate, and vibrates when a predetermined voltage is applied. The piezoelectric vibrating piece is not limited to the tuning fork type, and other piezoelectric vibrating pieces may be employed.

The internal electrode part 36 is preferably made of a material having high electrical conductivity and high corrosion resistance. In the present embodiment, the internal electrode portion 36 contains gold. The internal electrode portion 36 may be composed of gold alone. As will be described in detail later, the internal electrode portion 36 is laminated on the upper surface of a first layer 37 (see FIG. 9) disposed on the surface of the base substrate 2.
In the present embodiment, the second layer 36 (internal electrode portion 36, gold layer) is laminated via the first layer 37 (chrome layer) containing chromium having high adhesion to the base substrate 2 that is a glass-based substrate. As a result, the conductive layer 34 can be firmly bonded to the base substrate 2.

  Below, the manufacturing method of the package of the piezoelectric vibrator of this embodiment is demonstrated with reference to FIGS. 4 to 9 are diagrams showing one process of manufacturing in the method of manufacturing a piezoelectric vibrator package according to this embodiment, and FIGS. 10 to 12 are flowcharts showing manufacturing steps in the manufacturing method.

  FIG. 4 is a perspective view showing one process of processing a base substrate wafer 40 that contains, for example, soda-lime glass or the like and later becomes the base substrate 2. As shown in FIG. 4, a plurality of a pair of through holes 30 and 31 penetrating the base substrate wafer 40 are formed (glass substrate forming step S1 shown in FIG. 10). A broken line M shown in FIG. 4 is a line that is an external shape of the base substrate 2, and is a cutting line when the base substrate wafer 40 is cut.

  FIG. 5 is a cross-sectional view of the base substrate wafer 40 showing the through holes 30 and 31 in an enlarged manner. Subsequent to the glass substrate forming step S1, the core material portion 7 and the glass frit described above are filled in the plurality of through holes 30 and 31, and the base substrate wafer is baked together with the cylindrical body 6 made of glass frit. The through electrode portion 32 (33) is formed (through electrode forming step S2 shown in FIG. 10).

  Subsequently, the above-described conductive layer 34 is stacked on the surface of the base substrate wafer 40 (conductive layer stacking step S3 shown in FIG. 10). In the present embodiment, the conductive layer 34 has a multilayer structure (see, for example, FIG. 9) having the first layer 37 (chrome layer) and the second layer 36 (gold layer) as described above. A first layer 37 (chrome layer) is laminated on the surface (first layer lamination step S31 shown in FIG. 11), and then a second layer 36 (gold layer) is laminated on the upper surface of the first layer 37 (FIG. 11). 2nd layer lamination process S32) shown in FIG. Therefore, the first layer 37 (chrome layer) is firmly bonded to the base substrate wafer 40, and the second layer 36 is firmly bonded to the first layer 37.

  Following the conductive layer laminating step S3, a predetermined circuit shape is drawn with the first resist ink on the upper surface of the conductive layer 34, that is, the upper surface 36a of the second layer 36, and the first resist pattern including the first resist ink is laminated. 10 (first resist lamination step S4 shown in FIG. 10), the conductive layer 34 is formed into a pattern having the same shape as the pattern of the first resist (conductive layer patterning step S5 shown in FIG. 10).

  Specific examples of the patterning method in the conductive layer patterning step S5 include a method using photolithography and wet etching (or dry etching). At this time, the photoresist may be a negative type whose solubility is lowered when exposed, or a positive type whose solubility is increased when exposed.

  FIG. 6 is a cross-sectional view schematically showing a state immediately after the conductive layer patterning step S5 is completed. As shown in FIG. 6, when the conductive layer patterning step S5 is completed, the first layer 37, the second layer 36, and the first resist pattern 21 are stacked in this order on the surface of the base substrate wafer 40. Has been.

Subsequent to the conductive layer patterning step S5, the bonding film 35 is laminated on the upper surfaces of the base substrate wafer 40 and the first resist pattern 21 (deposition step S6 shown in FIG. 10). At this time, although the bonding film 35 is in contact with the side surface 36b of the second layer 36, the first resist pattern 21 is interposed between the second layer 36 and the bonding film 35 on the upper surface 36a. It has not been.
In the film forming step S6, when the bonding film 35 is formed to a predetermined thickness, all the temperatures of the base substrate wafer 40, the first layer 37, the second layer 36, and the first resist pattern 21 may increase. is there. At this time, some of the components of the bonding film 35 are dissolved and diffused to the surroundings.
FIG. 7 is a cross-sectional view schematically showing a state in which the above temperature rise has occurred during the film forming step S6. A part of the components of the bonding film 35 diffuses through the portion where the bonding film 35 is in contact. As shown in FIG. 7, for example, in the second layer 36, the diffusion of the component of the bonding film 35 occurs on the side surface 36 b in contact with the bonding film 35. However, the components of the bonding film 35 are not diffused from the upper surface 36a in contact with the pattern 21 of the first resist.

  After the film formation step S6, the second resist pattern 22 containing the second resist ink is laminated on the upper surface of the bonding film 35 (second resist lamination step S7 shown in FIG. 10), and the bonding film 35 is formed into the second resist pattern. 22 (the bonding film patterning step S8 shown in FIG. 10). FIG. 8 is a cross-sectional view schematically showing a state in which the bonding film patterning step S8 has been completed. As shown in FIG. 8, when the bonding film patterning step S <b> 8 is completed, the bonding film 35 is formed in a predetermined pattern on the upper surface of the base substrate wafer 40. For example, as shown in FIG. 3, a pattern suitable for bonding the base substrate 2 and the lid substrate 3 such as a pattern surrounding the internal electrode portion 36 (second layer 36) on the surface of the base substrate 2. can do.

  After the bonding film patterning step S8, both the first resist pattern 21 and the second resist pattern 22 are removed (resist removing step S9 shown in FIG. 10). In this embodiment, the resist removing step S9 is performed by applying a resist stripping solution for stripping the first resist pattern 21 and the second resist pattern 22 on the base substrate wafer 40 (resist stripping solution coating step shown in FIG. 12). S91), argon plasma is applied to the upper surface 36a of the second layer 36, which is the surface of the conductive layer 34 exposed in the resist stripping solution application step S91, to clean the upper surface 36a of the second layer 36 (Ar plasma shown in FIG. 12). Ashing step S92).

  FIG. 9 is a cross-sectional view schematically showing a state in which the resist removal step S9 is completed. As shown in FIG. 9, a conductive layer 34 in which a first layer 37 and a second layer 36 are laminated in this order on the surface of the base substrate wafer 40 after the first resist and the second resist are removed. And a layer of the bonding film 35 are formed.

After the resist removal step S9 is completed, bumps B (see FIG. 3) are provided on the upper surface of the second layer 36 by a later step (not shown). For the bump B, for example, a bump containing gold can be used. The bump B can be formed by a stud bump method in which a gold wire is welded to a predetermined position (gold pad portion) on the upper surface 36a of the second layer 36.
Furthermore, the piezoelectric vibrating reed 4 is connected to the gold pad portion via the bump B, and the base substrate 2 and the lid substrate 3 are hermetically bonded via the bonding film 35 to form the package 5.

As described above, according to the method of manufacturing a piezoelectric vibrator package according to the present embodiment, the first resist pattern 21 is left on the upper surface 36a of the second layer 36 following the conductive layer patterning step S5. The film forming step S6 is performed as it is. Therefore, the first resist pattern 21 is interposed between the upper surface 36 a of the second layer 36 and the bonding film 35, and the upper surface 36 a of the second layer 36 is protected from diffusion of components of the bonding film 35. Yes. As a result, diffusion of the bonding film component to the conductive layer 34 can be suitably suppressed.
Furthermore, since the first resist pattern 21 for patterning the conductive layer 34 is also used as a layer for protecting the conductive layer 34, no additional process is required to protect the conductive layer, The quality of the conductive layer can be kept high while suppressing the manufacturing method from becoming complicated.

  Further, a gold layer containing gold is employed as the second layer 36 of the conductive layer 34, and the diffusion of the components of the bonding film 35 to the upper surface 36a of the second layer 36 is suppressed. When the stud bump method is used, it is possible to suppress an adverse effect on the bonding property of the bump.

(Modification)
Below, the modification of this embodiment is demonstrated with reference to FIG.
In this modification, in the resist removal step S9, the first resist pattern 21 and the second resist pattern 22 of the base substrate wafer 40 are removed instead of the resist stripping solution application step S91 and the Ar plasma ashing step S92. An O ₂ plasma ashing step S191 for cleaning the upper surface 36a of the second layer 36 is provided.
In this case, the removal of the resist and the cleaning of the surface of the conductive layer 34 are simultaneously performed by the O ₂ plasma ashing step S191.
In this modification, it is possible to complete the cleaning of the upper surface of the second layer 36 by removing the resist in one step. Therefore, the method for manufacturing the piezoelectric vibrator package can be simplified.

  As mentioned above, although embodiment of this invention was explained in full detail with reference to drawings, the concrete structure is not restricted to this embodiment, The design change etc. of the range which does not deviate from the summary of this invention are included.

1 Piezoelectric vibrator 2 Base substrate (first substrate)
3 Lid board (second board)
5 Package 21 First Resist Pattern 22 Second Resist Pattern 34 Conductive Layer 35 Bonding Film 36 Second Layer (Gold Layer, Internal Electrode Section)
37 First layer (chrome layer)
B bump S3 conductive layer laminating step S31 first layer laminating step S32 second layer laminating step S4 first resist laminating step S5 conductive layer patterning step S6 film forming step S7 second resist laminating step S8 bonding film patterning step S9 resist removing step S91 Resist stripping solution application step S92 Ar plasma ashing step S191 O ₂ plasma ashing step

Claims (7)

A method of manufacturing a package of a piezoelectric vibrator in which a first substrate and a second substrate are bonded via a bonding film,
A conductive layer laminating step of laminating a conductive layer having electrical conductivity on the surface of the first substrate;
A first resist laminating step of laminating a pattern of a first resist containing a first resist ink on the upper surface of the conductive layer following the conductive layer laminating step;
A conductive layer patterning step of forming the conductive layer into a pattern having the same shape as the pattern of the first resist, following the first resist lamination step;
A film forming step of laminating the bonding film on top of the first substrate and the pattern of the first resist following the conductive layer patterning step;
A method for manufacturing a package of a piezoelectric vibrator comprising: The conductive layer lamination step includes
A first layer laminating step of laminating a first layer having high adhesiveness with the first substrate on the surface of the first substrate;
A second layer laminating step of laminating a second layer having a bump bonding region to which the bumps are bonded to the upper surface of the first layer;
A method for manufacturing a package of a piezoelectric vibrator according to claim 1.   The method for manufacturing a piezoelectric vibrator package according to claim 2, wherein the second layer contains gold. After the film forming step,
A second resist laminating step of laminating a pattern of a second resist containing a second resist ink on the upper surface of the bonding film;
A bonding film patterning step for forming the bonding film in the same shape as the pattern of the second resist after the second resist lamination step;
A method for manufacturing a package of a piezoelectric vibrator according to claim 1, wherein   5. The method for manufacturing a package of a piezoelectric vibrator according to claim 1, further comprising a resist removal step of removing both the first resist and the second resist after the bonding film patterning step. The resist removing step
A resist stripping solution coating step of coating a resist stripping solution on the first resist and the second resist on the first substrate;
Ar plasma ashing process for cleaning the surface of the conductive layer;
A method for manufacturing a package of a piezoelectric vibrator according to claim 5. The resist removing step
6. The method of manufacturing a package of a piezoelectric vibrator according to claim 5, further comprising an O ₂ plasma ashing step of removing the first resist and the second resist on the first substrate and cleaning a surface of the conductive layer.

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