JP2010171216A - Mems device package device and method of manufacturing the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a means where a MEMS device and IC chip are easily integrated in wafer processing without forming a through electrode or side electrode, while securely sealing the MEMS device and IC chips integrally. <P>SOLUTION: The MEMS device and IC chip are electrically and physically connected, and a post-electrode and post-electrode component with wirings connected thereto are connected on a wiring layer of a surface of the MEMS device or the IC chip. The post-electrode component with wirings are configured by forming the post-electrode and wirings connected thereto on a support plate. The wirings are exposed by peeling the support plate after resin sealing to connect an electrode for external connection to the other end portion of the wiring connected to the post-electrode. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a MEMS device package apparatus in which a MEMS device and an IC chip for signal processing thereof are connected and resin-sealed, and an external connection electrode is disposed on the outer surface of the apparatus, and a manufacturing method thereof.

  MEMS devices are beginning to be widely used. Various sensors and communication devices have been developed as MEMS devices that use micro electro mechanical system (MEMS) technology. In such various sensors or communication devices, mechanical movable parts such as switches, inductors, or variable capacitors are formed by MEMS technology, and the other parts are formed by semiconductor circuits. In general, a MEMS device often forms a movable part by processing a silicon substrate, and detects a distortion of the movable part and converts it into an electrical signal.

  Since a MEMS device generally has a movable part, the movable part is sealed and supplied for stable operation of the movable part. When a normally detected electrical signal is transmitted to an IC chip for signal processing to perform signal processing, the MEMES device is uniquely sealed and connected to the IC chip on the substrate. It is desirable that the connection with the IC chip is compact, but at present, the MEMS device and the IC chip are separately mounted and connected on a substrate or the like. If this is to be integrated with an IC chip and a MEMS device chip, it is necessary to provide a through electrode on one of the chips and form an electrode on the surface opposite to the active surface. For example, like the MEMS device described in Patent Document 1 or Patent Document 2, a through electrode is provided in either the IC chip or the MEMS device, and the electrode is taken out on the opposite side.

  FIG. 22 is a diagram for explaining the laminated device disclosed in Patent Document 1. FIG. In this laminated device, a sensor control layer having an electronic circuit formed in a plane and an RF layer are laminated so as to sandwich a MEMS layer (MEMS device) in which a mechanical three-dimensional structure is formed. Is formed. The MEMS device is a layer in which a mechanical three-dimensional structure such as a sensor or an actuator is formed by MEMS technology. This MEMS device can convert a physical quantity to be measured into an electrical physical quantity by a three-dimensional structure. The sensor control layer is a layer having a sensor control unit formed as an analog circuit. The RF layer transmits a digital signal output from the sensor control unit and indicating a detection result by the micromachine unit to an external device by radio.

  The illustrated stacked device includes an electrode pad A and an electrode pad formed of metal or the like at the end of each wiring in the sensor control unit and the RF unit in order to stack the sensor control layer, the RF layer, and the MEMS layer. B is formed, and these electrode pads A and B are respectively connected to the through electrodes formed in the MEMS layer.

  As described above, since the illustrated laminated device connects the upper and lower sides of the MEMS layer with the IC chip also serving as sealing, the MEMS layer must be provided with a number of through electrodes. Furthermore, since the active surfaces of the upper and lower IC chips are connected to the MEMS layer, side electrodes (not shown) are provided on the MEMS layer in order to solve the problem that signals cannot be exchanged with the outside. And is configured to communicate wirelessly. Otherwise, it is necessary to provide a through electrode in either the upper or lower IC.

  Furthermore, in order to protect the movable part of the MEMS layer, two upper and lower ICs are used for covering, but two ICs are not always necessary. If one IC is sufficient, an extra IC only for protection and its connection is required. Further, the MEMS layer requires a through electrode or a side electrode. Furthermore, radio and the like include technologies that cannot be covered only by ordinary mounting technologies.

  The through electrode structure is still expensive because it is complicated in process and expensive. In addition, when a MEMS device is mounted on a package, it is necessary to eliminate the entry of foreign matter into the movable space, so it is necessary to maintain a clean environment during mounting, which is one of the factors that increase assembly costs. Yes.

  Patent Document 3 discloses a post electrode part with wiring created by an electroforming method described later.

JP 2008-164620 A JP 2007-31594 A International Publication WO2008 / 065896 A1

  An object of the present invention is to integrate a MEMS device and an IC chip together and ensure confidentiality sealing, and to easily form them integrally in a wafer processing step without forming through electrodes or side electrodes.

  In the MEMS device package apparatus and the manufacturing method thereof according to the present invention, the MEMS device formed on the substrate and the signal processing IC chip are connected and resin-sealed, and the external connection electrode is disposed on the outer surface of the apparatus. Post electrode component with wiring having a post electrode and a wiring connected thereto on a wiring layer on the surface of the MEMS device or the IC chip, the MEMS device and the IC chip being electrically and physically connected with the surfaces facing each other Are electrically and physically connected. The post electrode component with wiring is formed by forming a post electrode and wiring connected thereto on a support plate. After resin sealing, the wiring is exposed by peeling the support plate, and the external connection electrode is connected to the other end of the wiring connected to the post electrode.

  The post electrode component with wiring further includes an insulating base film attached to the support plate with a peelable adhesive, and the post electrode and the wiring connected thereto are formed on the insulating base film, and The external connection electrode is connected through an opening in the insulating base material thin film.

  One of the MEMS devices or the IC chips is formed in a state of being connected together in a large number, and each of the single unit is flip-chip mounted on each of the multiple connected in a unit, In the process, it is divided into individual modules. Alternatively, both the MEMS device and the IC chip are formed in a state of being connected together in a large number, and electrical and physical connection is performed in a state where the plurality of devices are connected together. After removal using etching and / or grinding, both post electrode parts with wiring are connected, and divided into individual modules in a later process.

  According to the present invention, a MEMS device can be hermetically sealed and simultaneously connected to an IC chip, and an external electrode can be simply extracted without using a through electrode. Further, according to the present invention, the movable space is hermetically sealed at the time of assembly, and no special clean environment is required. Furthermore, the electrodes can be formed by a normal mounting technique without forming electrodes on the side surface for input / output from / to the outside, and without requiring connection between the side electrode and other components.

It is sectional drawing which shows the 1st example of the MEMS device package apparatus which actualizes this invention. It is a figure which illustrates the MEMS device which is three main components which comprise a MEMS device packaging apparatus, an IC chip, and a post electrode part with wiring. It is a figure shown in the state which affixed the thin film tape on the support plate. It is a figure shown in the state which formed the wiring pattern on the tape. It is a figure which shows the state which apply | coated the resist for post electrode formation to the whole surface containing the formed wiring pattern, and was opened by image development. It is sectional drawing which shows the completed post electrode component with wiring. It is a figure which shows the state which performed the flip-chip mounting of the IC chip on the MEMS device. It is a figure shown in the state which connected the post electrode component with wiring on the MEMS device. It is a figure shown in the state sealed with resin. It is a figure shown in the state after peeling a support plate. It is a figure which shows another example of the post electrode component with wiring which can be used for this invention. It is the perspective view of the state (C) which has arrange | positioned both the MEMS device wafer (A) and IC wafer (B) of the wafer state which many connected integrally. It is sectional drawing of the state which faced the MEMS device wafer and IC wafer. It is a figure shown in the state where the IC wafer was connected on the MEMS device wafer. It is a figure shown in the state which ground the IC wafer. It is a figure shown in the state which removed each IC chip circumference which constitutes an IC wafer. It is a figure shown in the state which performed the flip chip mounting of each MEMS device on the IC chip of a wafer state. It is a figure which shows the state which has arrange | positioned the post electrode component with wiring on the IC chip which mounted | wore with the MEMS device. It is a figure shown in the state sealed with resin. It is a figure shown in the state after peeling a support plate. It is a figure which shows the completion state of the 2nd example of a MEMS device package apparatus. It is a figure explaining the lamination | stacking device disclosed by patent document 1. FIG.

  Hereinafter, the present invention will be described based on examples. FIG. 1 is a cross-sectional view showing a first example of a MEMS device package apparatus embodying the present invention. As shown in the figure, a MEMS device (for example, a sensor element) and its signal processing IC chip face each other for electrical connection and physical coupling to maintain a sealed space. Since the MEMS device movable part can be positioned in the sealed space, it is possible to exclude foreign matters from being mixed into the movable part space. The connection between the wiring layer on the surface of the MEMS device substrate (or the IC chip in the case of the second example illustrated in FIG. 21) and the external connection electrode arranged on the outer surface of the device is the post electrode and the wiring connected thereto. This is performed using a post electrode part with wiring having the following. Furthermore, the post electrode part with wiring can be provided with a thin film tape (protective film) for protecting the wiring. When there is a protective film, the connection to the external connection electrode is made through an opening in the protective film. The post electrode part with wiring can be formed by plating on the multilayer support plate structure (see FIG. 6), or can be formed on the support plate by electroforming (see FIG. 11).

  Next, a manufacturing method of the first example of the MEMS device package apparatus shown in FIG. 1 will be described step by step with reference to FIGS. FIG. 2 illustrates three main components constituting the MEMS device packaging apparatus. (A) is a cross-sectional view of a MEMS device, (B) is a perspective view of the MEMS device, (C) is an IC chip, and (D) is a post electrode component with wiring. As is well known, an exemplary MEMS device is a device in which a mechanical three-dimensional structure (movable part) formed on a silicon substrate is formed by a MEMS technique, and the measurement target is measured by the three-dimensional structure. A sensor such as an acceleration sensor or a pressure sensor that converts the physical quantity into an electrical physical quantity, an actuator, or a switch, or an element such as an inductor or a variable capacitor is formed. A connection electrode pad portion and a wiring layer connected to the connection electrode pad portion are formed on the surface of the silicon substrate. As shown in FIG. 2C, the IC chip is exemplified as a packaged semiconductor integrated circuit (IC) provided with protruding electrodes for external connection called bumps. As described above, the connection electrode pad portion is provided on the MEMS device side and the protruding electrode is provided on the IC chip side, but the reverse is also possible.

  The post electrode part with wiring shown in FIG. 2 (D) is electrically separated on a supporting part consisting of a supporting plate and a two-layer structure of a thin film tape bonded to the supporting plate. A post electrode connected thereto is integrally provided. In a later step, the support plate is peeled off from the thin film tape and removed.

  First, manufacture of the post electrode part with wiring illustrated here will be described with reference to FIGS. First, as shown in FIG. 3, a thin film tape is affixed on a support plate (hereinafter, the two-layer configuration of the tape and the support plate is referred to as a support portion). As the support plate, either a plate-like silicon substrate, an insulator such as glass, or a conductor can be used. For example, by using a stainless plate, stronger rigidity is obtained during the manufacture of a semiconductor device. be able to. As the tape (thin film) to be attached, an insulating base film such as a thin film typified by polyimide tape is desirable. As described above, the support portion has a two-layer configuration of the insulating base tape (thin film) and the support plate (reinforcement plate) attached to the back side (opposite side of the wiring pattern forming surface). The support plate is peeled off and removed after the subsequent resin sealing step.

  The insulating base tape functions as a protective film that covers the wiring pattern in the finished product (MEMS device package apparatus). When a temperature higher than the reflow temperature (more than the mold temperature) is applied to the tape, a treatment that easily peels from the support plate is performed in advance. For this reason, the adhesive which affixes an insulating base tape uses the material which is easy to peel at predetermined | prescribed temperature (for example, high heat), or the material which is easy to peel by ultraviolet irradiation. For example, a heat-capsuled adhesive or a thermoplastic adhesive, or a support plate made of a material that transmits light (such as heat-resistant low-thermal expansion glass) and an ultraviolet peeling adhesive are used.

  Next, as shown in FIG. 4, a wiring pattern is formed on the thin film tape. For this reason, a low-resistance metal film to be a wiring pattern is deposited or pasted on the entire surface of the thin film tape to form a metal-attached tape. As this metal film, for example, gold, silver, copper, or palladium foil that enables copper plating can be used. A resist is applied on the metal layer, the pattern is exposed and developed, and further etched, and the resist is removed to complete a wiring pattern. A wiring layer may be further grown on this metal layer by plating. Alternatively, instead of vapor deposition or pasting a metal film, a thin film tape and a thin metal film (for example, copper foil) integrated may be used. Also in this case, the wiring pattern is formed by lithography. Alternatively, the wiring pattern can be directly patterned using nano metal particles by an ink jet method or a screen printing method, and the lithography process can be omitted. Here, the ink jet method is a method in which nano metal particles are contained in an organic solvent, and a desired pattern is drawn by an ink jet method which is practically used in a printer. In the case of the screen printing method, a nano paste containing nano metal particles in an organic solvent is applied on a substrate by a screen printing method.

  Next, as shown in FIG. 5, a resist for forming a post electrode is applied to the entire surface including the formed wiring pattern, and an opening is formed by development.

  FIG. 6 is a cross-sectional view showing the completed post electrode part with wiring, which is the same as that illustrated in FIG. After the resist opening is plated and filled, the resist is removed. As a result, the wiring and the post electrode connected to the wiring are formed on the two-layered supporting portion composed of the supporting plate and the thin film tape. FIG. 6 illustrates a single unit pattern, but in the actual manufacturing of a MEMS device packaging apparatus, a plurality of individual pieces are produced in a state of being connected together and cut into individual chips (modules) for separation. After completion, the final product is completed.

  FIG. 7 is a diagram showing the IC chip in a state where flip chip mounting is performed on the MEMS device. By this flip chip mounting, the protruding electrodes provided on the IC chip are directly connected to the electrode pad portions on the MEMS device substrate face down. Flip chip mounting can be performed using a normal bonding technique such as pressure bonding, heat bonding, or ultrasonic bonding, but at this time, it is necessary to include a protruding electrode inside the entire periphery of the periphery of the IC chip. In addition, by applying an adhesive, it is possible to serve as a dam that does not allow the resin to enter the MEMS when the resin is sealed in a later step. The illustrated MEMS device illustrates a case where the surface area is larger than that of an IC chip. That is, this is a case where the IC chip has a size that fits within the surface of the MEMS device as seen from the upper side of the figure. The MEMS device illustrated in FIG. 7 is illustrated as a single unit. However, in actual manufacturing, the MEMS device is manufactured in a state of being connected to one another, and each of the MEMS devices connected to the plurality of individual devices is manufactured. In addition, each single IC chip is flip-chip mounted.

  FIG. 8 is a view showing a state where the post electrode part with wiring (see FIG. 6) is connected to the MEMS device on which the IC chip is mounted. The post electrode of the post electrode part with wiring is fixed and electrically connected to a predetermined position (electrode pad portion) of the wiring layer formed on the upper surface of the MEMS device. As a method for fixing and connecting the post electrode, (1) ultrasonic bonding, (2) connection using a conductive paste such as silver paste, (3) solder connection, (4) connection electrode provided on the MEMS device side While the electrode pad portion is provided with a concave portion, the post electrode part with wiring side can be formed by a method of providing a convex portion and inserting / crimping or crimping.

  FIG. 9 is a diagram showing the resin-sealed state. After the post electrode integrally connected by the support part is fixed at a predetermined position of the MEMS device wiring layer, the upper surface of the MEMS device on which the IC chip is mounted in this state is the thin film tape of the support part and the lower surface of the wiring Or is resin-sealed using a liquid resin (material is, for example, epoxy).

  FIG. 10 is a view showing the state after the support plate is peeled off. For example, the support plate is peeled off by applying a predetermined temperature. Thus, the thin film tape exposed on the upper side of FIG. 10 functions as a protective film for the finished product. When another example (see FIG. 11) of a post electrode part with wiring described later is used, this protective film does not exist. When another example of the post electrode part with wiring is used and a protective film is required, a protective film (a material is, for example, a solder resist) can be formed at this stage.

  Thereafter, the MEMS device package apparatus as described above with reference to FIG. 1 is completed by dividing the module into individual modules and forming the final external connection electrode. As shown in FIG. 1, a hole is formed in the protective film (thin film tape), and external connection electrodes (bump electrodes) connected to the wiring exposed through the openings are formed on the outer surface of the device (the lower surface in the drawing). With this wiring, an external connection electrode can be provided at a position different from the tip of the post electrode.

  As described above, according to the present invention, by using the post electrode part with wiring, the MEMS device is hermetically sealed and simultaneously connected to the IC chip, and the external connection electrode can be easily extracted without using the through electrode. it can. Furthermore, it is possible to easily form a wiring connected to such an external connection electrode and a protective film for protecting such a wiring.

  FIG. 11 is a view showing another example of a post electrode part with wiring that can be used in the present invention (see Patent Document 3), and (A) and (B) are a side sectional view and a perspective view of a single pattern, respectively. Is shown. Such a well-known post electrode part with wiring can also be used in the MEMS device package apparatus of the present invention.

  The illustrated post electrode part with wiring forms not only the post electrode supported by the support plate but also the wiring connected thereto by electroforming. The feature of the electroforming method is that the formed post electrode with wiring and the support plate can be easily peeled off by heat or pressure. As the plating metal of the conductive material grown by electroforming, for example, nickel or copper, a nickel alloy, or a material containing a copper alloy can be used. As the matrix material, for example, stainless steel can be used. Such post electrode parts with wiring are provided with wiring integrated with the support plate by growing the post electrode with wiring on the conductive material (electroforming mother mold) which is the support plate using lithography and plating. A post electrode is formed. As described above, the support plate peeling step is performed after the resin sealing step (see FIGS. 9 and 10). However, there is no thin film tape (protective film) as shown in FIG. When a protective film is required, a protective film (for example, a solder resist) can be formed at the stage where the support plate is peeled off. Even if there is no protective film, it is possible to connect other packages by using, for example, resin-containing solder.

  Next, another method for connecting the IC chip and the MEMS device will be described with reference to FIGS. FIG. 12 shows a state in which a large number of MEMS device wafers (A), IC wafers (B), and connection electrode pad portions or protruding electrode formation surfaces in a wafer state that are integrally connected face each other. Each perspective view of C) is shown.

  FIG. 13 is a cross-sectional view of a state in which the MEMS device wafer and the IC wafer face each other as shown in FIG. FIG. 13 shows only one of each, but in reality, a large number of them are connected.

  FIG. 14 shows a state in which the IC wafer is connected to the MEMS device wafer.

  FIG. 15 is a view showing a state in which an IC wafer is ground. As shown, the IC wafer is ground and thinned in the thickness direction.

  FIG. 16 is a view showing a state in which the periphery of each IC chip constituting the IC wafer is removed by etching or grinding, or both methods. Such removal needs to be performed to the extent that the electrode pad portion for connecting the post electrode around the MEMS device chip is exposed and visible from above. Thereafter, the MEMS device package apparatus as illustrated in FIG. 1 is completed by the same method as described above with reference to FIGS.

  Such a method of bonding in a wafer state and removing one unnecessary region can also be applied when an IC chip described later is larger than a MEMS device chip (see FIGS. 17 to 21). In this case, the unnecessary area to be removed is not the periphery of the IC chip but the periphery of the MEMS device chip.

  Next, a second example of the MEMS device package apparatus embodying the present invention will be described with reference to FIGS. FIG. 17 is a diagram showing a state where individual MEMS devices are flip-chip mounted on a large number of connected IC chips in a wafer state. The IC chip illustrated in FIG. 17 is illustrated as a single unit. However, in actual manufacturing, the IC chip is manufactured in a wafer state in which a large number of IC chips are integrally connected. Each single MEMS device is flip-chip mounted on the substrate. By this flip chip mounting, the protruding electrode provided on the IC chip is directly connected to the electrode pad portion provided on the MEMS device substrate with the upward facing. The illustrated MEMS device is illustrated as being smaller than an IC chip. That is, it is a case where it has a magnitude | size which can fit a MEMS device in the IC chip surface seeing from the upper side of a figure.

  FIG. 18 is a view showing a state in which the post electrode part with wiring (see FIG. 6) is arranged on the IC chip on which the MEMS device is mounted. The post electrode of the post electrode part with wiring is fixed to a predetermined position (electrode pad portion) of the wiring layer formed on the upper surface of the IC chip by the same method as described with reference to FIG. Connected to.

  FIG. 19 is a view showing a resin-sealed state. After the post electrode integrally connected by the support part is fixed at a predetermined position of the wiring layer, in this state, the upper surface of the IC chip to which the MEMS device is connected is transferred to the thin film tape of the support part and the lower surface of the wiring. Alternatively, resin sealing is performed using a liquid resin (a material is, for example, an epoxy type).

  FIG. 20 is a diagram showing the state after the support plate is peeled off. For example, the support plate is peeled off by applying a predetermined temperature. Thus, the thin film tape exposed on the upper side of FIG. 20 functions as a protective film for the finished product. When another example (see FIG. 11) of the above-mentioned post electrode part with wiring is used, this protective film does not exist. When another example of the post electrode part with wiring is used and a protective film is required, a protective film (a material is, for example, a solder resist) can be formed at this stage.

  FIG. 21 is a diagram illustrating a completed state of the second example of the MEMS device package apparatus. FIG. 20 is shown upside down. As shown in the drawing, a hole is formed in the protective film (thin film tape), and external connection electrodes (bump electrodes) connected to the wiring exposed through the openings are formed. With this wiring, an external connection electrode can be provided at a position different from the tip of the post electrode.

Claims (6)

In the MEMS device package apparatus in which the MEMS device formed on the substrate and the IC chip for signal processing are connected and resin-sealed, and the external connection electrode is arranged on the outer surface of the apparatus.
The MEMS device and the IC chip face each other to make electrical and physical connections,
Connection between the wiring layer on the surface of the MEMS device or the IC chip and the external connection electrode is performed using a post electrode part with wiring having a post electrode and wiring connected thereto,
A MEMS device package apparatus comprising: connecting the external connection electrode to the other end of the wiring connected to the post electrode. The post electrode component with wiring further includes an insulating base film attached to the support plate with a peelable adhesive, and the post electrode and the wiring connected thereto are formed on the insulating base film. The MEMS device package apparatus according to claim 1, which is performed. In the manufacturing method of the MEMS device package apparatus in which the MEMS device formed on the substrate and the signal processing IC chip are connected and resin-sealed, and the external connection electrode is arranged on the outer surface of the apparatus.
The MEMS device and the IC chip face each other to make electrical and physical connections,
On the wiring layer on the surface of the MEMS device or the IC chip, electrically and physically connect a post electrode component with wiring having a post electrode and wiring connected thereto,
The post electrode component with wiring is formed by forming the post electrode and wiring connected thereto on a support plate,
After resin sealing, the wiring is exposed by peeling the support plate,
A method of manufacturing a MEMS device package apparatus, comprising: connecting the external connection electrode to the other end of the wiring connected to the post electrode. The post electrode component with wiring further includes an insulating base material thin film on a support plate, the post electrode and the wiring connected thereto are formed on the insulating base material thin film, and are used for the external connection. The method of manufacturing the MEMS device package apparatus according to claim 3, wherein the electrodes are connected through an opening in the insulating base material thin film. One of the MEMS device or the IC chip is formed in a state of being connected together in a large number, and the other of the single unit is flip-chip mounted on each of the one connected in a large number, The manufacturing method of the MEMS device package apparatus according to claim 3, which is divided into individual modules in a later step. Both the MEMS device and the IC chip are formed in a state of being connected together in a large number, and the electrical and physical connection is performed in a state where the plurality of the devices are connected together, The manufacturing method of the MEMS device package apparatus according to claim 3, wherein the post-electrode part with wiring is connected after etching is removed by etching or grinding, or both of them are used, and the module is divided into individual modules in a subsequent process.

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