JP2010165888A - Method of manufacturing resistor film, and resistor film - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a resistor film which has superior efficiency of manufacture and superior resistor characteristics. <P>SOLUTION: A solution of a metal organic compound having an organic metal compound containing at least one metal selected from the group consisting of tin, antimony, tantalum and niobium as a precursor solution, is applied on a supporting member such as an alumina substrate and is dried. Weak laser is irradiated to the substrate to perform a patterning and unreacted part is removed by acid. The substrate is heated from 200 to 500°C and strong laser is irradiated to the substrate to transform into a crystalline thin film. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a method of manufacturing a resistor film such as a patterned tin oxide resistor film and a resistor film.

  The antimony-doped tin oxide resistor is prepared by using an aqueous solution containing stannic chloride and antimony trichloride in a furnace heated to 600 to 800 ° C. using a film forming method such as a spray method or chemical vapor deposition (CVD). By spraying, a rod-shaped tin oxide resistor is produced (for example, Patent Document 1). When such a thin film resistor is applied to a flat chip resistor, it is expected to develop a low-cost method with high accuracy and stability of characteristics, easy pattern formation, and the like. Usually, in order to bring the resistance value of the resistor close to the required value, it is necessary to pattern the resistor thin film into a predetermined shape.

  However, since the tin oxide thin film is chemically very stable, it is difficult to process it into a desired shape by a conventional photolithography method. Moreover, since it is necessary to heat a board | substrate to high temperature in order to produce a low resistance tin oxide thin film, preparation to a base material (for example, resin substrate etc.) with low heat resistance is difficult. Furthermore, since CVD and spray pyrolysis methods consume a large amount of raw materials containing halogen such as chlorine, reduction of environmental load and cost has become an important issue.

  Among various thin film forming methods, the chemical solution method is simple and has a feature that does not consume a large amount of raw materials, and thus is expected as a low-cost process. This method is broadly divided into a sol-gel method in which a gel film hydrolyzed from a metal alkoxide is fired, and a coating in which a metal organic acid salt is baked at a low temperature to decompose organic components and crystal growth is performed at a high temperature. It can be divided into thermal decomposition method or organometallic decomposition method (MOD). All of these methods require a high-temperature heat treatment step and then patterning by photolithography to produce a thin film for final device application. As for patterning, a metal oxide patterning method is known in which alkanolamine is added to a metal alkoxide of a sol-gel method, irradiated with an ultraviolet lamp, and then unreacted portions are removed with a solvent and then fired (for example, Patent Document 2).

  On the other hand, a method known as a coating pyrolysis method for producing a metal oxide on a substrate without heat treatment at high temperature is a metal organic compound (metal organic acid salt, metal acetylacetonate, having 6 or more carbon atoms). A metal alkoxide having an organic group) is dissolved in a solvent to form a solution, which is applied to a substrate. Then, it is dried and a metal oxide is formed on a substrate by irradiating a laser beam having a wavelength of 400 nm or less, and a metal oxide manufacturing method is known (for example, Patent Document 3). .

In Patent Document 3, a metal organic compound is dissolved in a solvent to form a solution, which is applied to a substrate and dried, and then laser light having a wavelength of 400 nm or less, for example, ArF, KrF, XeCl, XeF, F _{2 is used.} A method for producing a metal oxide is described in which a metal oxide is formed on a substrate by irradiating a selected excimer laser. In addition, irradiation with laser light having a wavelength of 400 nm or less is performed in a plurality of stages, and the irradiation in the first stage is performed as weak irradiation that does not lead to complete decomposition of the metal-organic compound, and then changed to oxide. It also describes performing strong irradiation that can be done.

  In addition, about a metal organic compound, it is a 2 or more types of compound which consists of a different metal, The metal oxide obtained is a composite metal oxide which consists of a different metal, Comprising: The metal of a metal organic acid salt is iron, indium, It is known to be selected from the group consisting of tin, zirconium, cobalt, iron, nickel and lead.

JP 2002-367805 A JP-A-10-114506 JP 2001-031417 A

  In order to solve the above-mentioned problems, development of a new process is desired. However, the metal oxide patterning method described in Patent Document 2 described above merely performs patterning of metal alkoxide by ultraviolet irradiation of alkanolamine. No mention is made of the reaction with the metal organic acid salt or the method of producing the resistor film. As for the tin oxide thin film, a method of patterning and producing a crystal phase by a two-step irradiation method at room temperature in the air is known. However, although this method is suitable for applications such as tin oxide gas sensor thin films not doped with various metals, it is difficult to produce a tin oxide film doped with antimony having a resistance value used as a resistor. There's a problem.

  This invention is made | formed in view of the subject mentioned above, The place made into the objective is solving the subject in conventional tin oxide resistor manufacture, and the method of manufacturing a tin oxide resistor film easily. Is to provide.

The following configuration is provided as means for achieving the above object and solving the above-described problems. That is, the method of manufacturing a resistor film according to the present invention includes a step of preparing a precursor solution made of an organometallic compound containing tin and at least one metal selected from antimony, tantalum, and niobium, and the precursor solution. On the substrate to form an organic compound layer, a first laser irradiation step of irradiating the organic compound layer with an ultraviolet laser in a pattern corresponding to the shape of the resistor, and the organic compound layer Of these, the method includes a step of performing patterning by removing an unirradiated portion of the ultraviolet laser, and a second laser irradiation step of irradiating the organic compound layer after the patterning with an ultraviolet laser. The second laser irradiation step is preferably performed while heating the substrate to 200 ° C to 500 ° C.
The metal organic compound is a metal organic metal salt or metal acetylacetonate. Further, the ultraviolet irradiation energy in the first laser irradiation step is 10 to 30 mJ / cm ² , and the ultraviolet energy in the second laser irradiation step is higher than the irradiation energy in the first laser irradiation step. Features.
After the second laser irradiation step, the substrate is heat-treated at 300 ° C. to 800 ° C. Further, the removal of the unirradiated part is performed with an acid solution. Furthermore, the resistor film having a predetermined film thickness is formed by repeating the above steps a plurality of times.

  According to the present invention, it is possible to form a resistor thin film that can be applied to various substrates, has high manufacturing efficiency, and has excellent resistor characteristics.

It is the flowchart which showed the manufacturing process of the thin film resistor which concerns on the embodiment of this invention in time series. It is sectional drawing of the resistor shown corresponding to each process of FIG. It is a top view which shows the pattern shape of the resistor in resistor patterning. It is a figure which shows the mode of a surface base electrode. It is a figure which shows a mode when laser trimming is performed to the resistor. It is a figure which shows a mode that overcoat was formed so that a resistor might be covered. It is a figure which shows the external appearance of the board | substrate divided | segmented into strip shape. It is a figure which shows the partial cross-sectional structure of the completed chip resistor.

  Hereinafter, an embodiment of the present invention will be described in detail with reference to the accompanying drawings. FIG. 1 is a flowchart showing, in chronological order, manufacturing steps of a thin film resistor according to an embodiment of the present invention. 2 to 7 are a sectional view and a plan view of the resistor shown corresponding to each step of FIG.

  In the method for producing a tin oxide thin film according to an embodiment of the present invention, a metal organic compound solution is applied onto a support, dried, and then irradiated with a weak laser. Then, after removing the unirradiated portion of the metal organic compound coated on the support that has not been irradiated with an acid solution with an acid solution, the substrate is heated and irradiated with a strong laser to convert it into a crystalline thin film. It is characterized by performing. That is, the substrate is prepared in the first step (step S1 in FIG. 1) of the manufacturing process of the tin oxide thin film. Here, an insulating substrate such as an alumina substrate or a glass ceramic substrate is used as the substrate. This substrate is a large-sized substrate on which a large number of chip components can be formed simultaneously, and a break groove 3 is formed on the back surface of the substrate 1 as shown in FIG.

  When a large substrate is divided into chip pieces to be described later, the substrate 1 is divided along the break grooves 3 by applying an appropriate pressure to the substrate 1. The break groove 3 is formed by, for example, laser, embossing, dicer or the like. The break groove 3 is for a primary break, and a break groove (not shown) for a secondary break is formed in a direction orthogonal to the break groove 3. Here, the break groove 3 is formed only on the back surface of the substrate, but a similar break groove may be formed on the surface of the substrate. Moreover, the break groove | channel does not need to be formed and the board | substrate 1 is divided | segmented with a laser, a dicer, etc. in that case.

In step S2, a resistor is deposited. Here, after applying the precursor solution to the substrate using a spin coater, the solvent is removed by heating to 100 ° C. The precursor solution uses a metal organic compound, ie, a metal organometalate or metal acetylacetonate. In the subsequent step S3, resistor patterning is performed. Specifically, (i) the applied film is irradiated with ArF laser to the portion corresponding to the pattern shape of the resistor 2 shown in FIGS. 2B and 3 (first laser irradiation). ). Irradiation conditions are low fluence, laser fluence is 10 mJ / cm ² , repetition rate is 10 Hz, number of irradiations is 1000 pulses, and substrate temperature is room temperature. (Ii) The portion not irradiated with laser is removed by etching using hydrochloric acid (0.5N-HCl), that is, an acid solution, and the resistor is patterned. Then, (iii) the resistor 2 is irradiated with ArF laser (second laser irradiation).

The irradiation condition of the second laser irradiation is high fluence. Specifically, the laser fluence is 80 mJ / cm ² , the repetition rate is 10 Hz, the number of irradiations is 1000 pulses, and the substrate temperature is 400 ° C. In order to secure the thickness of the resistor, the resistance of the SnO ₂ film (film thickness 400 nm) doped with Sb (5%) is obtained by repeating the above step S2 and the steps (i) to (iii) a plurality of times. Create a body membrane. Thus, the board | substrate with which the resistor was formed is heat-processed at 600 degreeC for 5 hours using an electric furnace.

  In step S5, a thin film surface base electrode 5 is formed on both ends of the resistor, as shown in FIG. 2C and FIG. Here, for example, a copper (Cu) film is deposited on the entire surface of the substrate 1 on which the resistor 2 is formed by a sputtering method. Then, by patterning so as to leave a copper (Cu) film on both end portions of the resistor 2 by the photolithography method, the surface base electrode 5 is formed. In step S6, a back base electrode film is formed. Here, a thin base substrate electrode 6 is formed on the back side of the substrate 1 as shown in FIG.

  In the laser trimming process in step S8, the resistance value is adjusted as necessary. The resistance value is adjusted by making a cut (trimming mark 7) in the resistor 2 with a laser as shown in FIG. 5 while measuring the resistance value between the front and back electrodes 5. In subsequent step S9, as shown in FIG. 2E and FIG. 6, an overcoat 10 is formed by screen printing an epoxy resin so as to cover the resistor between the front and back electrodes 5. In step S10, the marking 12 is printed as shown in FIG. For example, the marking 12 is formed by printing predetermined characters, symbols, and the like by screen printing or the like.

  In step S12, a primary break is performed on the substrate. Here, a primary break occurs along the break groove 3. Thereby, the large-sized substrate is divided into strips. FIG. 2 (f) shows a cross section of the substrate divided into strips, and FIG. 7 shows the appearance of the strip substrate. In step S13, an end face base electrode is deposited. Specifically, a metal film is deposited by sputtering on the end faces 15 and 17 of the substrate exposed by the primary break to form the end face base electrode 20. By this end face base electrode 20, the front base electrode 5 and the back base electrode 6 are electrically connected.

  In step S15, a secondary break of the substrate is performed. Here, the board | substrate divided | segmented into the strip shape mentioned above is further divided | segmented into chip shape by the break groove | channel for secondary break not shown. In step S17, a nickel film 23 is formed by electrolytic plating on the exposed surfaces of the front base electrode 5, the back base electrode 6, and the end surface base electrode 20, and a solder film 21 is further formed by solder plating. This completes the chip resistor. FIG. 8 shows a partial cross-sectional configuration of the completed chip resistor.

  In the resistance value measuring step in step S18, the resistance value of the completed chip resistor is measured, and defective products are selected. And in the taping process of step S20, the chip resistor after sorting is put into a tape-shaped packaging material for shipping the finished product.

  In the embodiment of the present invention, that is, the method for producing a patterned crystalline tin oxide thin film resistor thin film, when tin oxide forms a resistor thin film, the metal organic film and the inorganic film are irradiated with ultraviolet light (laser). After the irradiation, an unirradiated portion of the laser is removed by treating with an acid solution, and the remaining film is heated and further irradiated with ultraviolet rays. The unirradiated portion may be removed by using xylene or the like in addition to the acid. In the first laser irradiation step described above, patterning can be performed even with low-energy energy irradiation, but in order to produce a low-resistance thin film, it is preferable to use an ultraviolet laser. Further, in the one-step irradiation using an ultraviolet lamp, the final resistance is higher than that of a film manufactured by laser irradiation. This is considered to be due to the fact that antimony oxide is eluted by acid treatment during patterning because the energy of the ultraviolet lamp is weak.

  In patterning, laser irradiation is performed with a pattern corresponding to the shape of the resistor to be formed by a method using a photomask or a method of drawing a predetermined pattern by squeezing laser light, and only the irradiated portion is converted into an oxide and not irradiated. The part is subjected to shape processing by dissolution and removal using an acid or the like. For dissolving the unirradiated part, it is preferable to use about 0.5N to 3N hydrochloric acid with diluted hydrochloric acid, but it is also possible to use an acid solution containing nitric acid, sulfuric acid, phosphoric acid, etc. that does not elute antimony. In addition, xylene or the like can also be used.

  In the second laser irradiation, it is possible to produce a conductive tin oxide thin film as long as the laser is in the ultraviolet region, but from the band gap of tin oxide, a wavelength of 190 nm to 350 nm with large optical absorption. The laser can be used. In particular, the use of an ArF (193 nm) laser having a large photon energy is effective in forming a highly crystalline thin film.

  As described above, in the method of manufacturing a resistor thin film according to this embodiment, a metal organic compound solution that forms tin oxide is applied onto a support, and a drying process, a process by weak laser irradiation, an acid treatment ( A step of removing an unirradiated part with an acid) and a step of crystallizing by laser irradiation with strong energy. Further, depending on the purpose, it is possible to select a predetermined process in the middle or before and after each process. Furthermore, a metal organic compound solution is spin-coated on a substrate, dried at 130 ° C. in a thermostatic chamber for solvent removal, and then the sample is mounted on a sample holder in a laser chamber and irradiated with laser at room temperature. it can.

  In this embodiment, after applying a metal organic compound and irradiating the dried film with laser, and further performing acid treatment, the film is irradiated with laser while performing appropriate heat treatment. For example, the following effects were confirmed for the sample on which the antimony-doped tin oxide film was produced.

That is, a solution of a metal organic compound that forms an antimony-doped tin oxide film is applied on a support, and after drying, an organic component in the metal organic compound is treated with an ultraviolet laser of 10 to 30 mJ / cm ² , and 1N A patterning film was obtained by treatment with hydrochloric acid. Thereafter, ArF laser irradiation (laser fluence: 80 mJ / cm ² , repetition rate: 10 Hz, number of irradiations: 1000 pulses, substrate temperature: 400 ° C.) promotes crystallization and has a specific resistance of 0.00557 Ω · cm. It was found that a thin film was obtained. It was also found that when the film after laser irradiation was heat-treated at 400 to 600 ° C., the conductivity further increased.

Next, the method for manufacturing a resistor thin film according to the present embodiment will be described in more detail with reference to specific examples. Here, an alumina substrate (99.6% alumina substrate) was used as the substrate. In addition, a metal organic compound, that is, a metal organic metal salt or a metal acetylacetonate can be used for the precursor solution. Here, a tin sample solution containing 5% Sb was prepared by mixing tin 2-ethylhexanoate, an Sb solution (containing Sb ₂ O ₃ , xylene and a stabilizer), and xylene. Was used as a precursor solution. The Sb content is preferably up to 10%. Here, the resistance is reduced by doping with Sb, but Sb exceeding 10% is not doped, which may be a factor for inhibiting the resistance reduction. The lower limit of the Sb content is preferably 2% or more in order to reduce resistance. More preferably, it is 5 to 6%. In addition, a solution is not limited to what contains Sb, For example, you may use the solution of Ta, Nb.

(Sample 1)
Sample 1 is a tin oxide thin film manufactured by repeating weak laser irradiation and strong laser irradiation. First, (i) the precursor solution was applied to the substrate using a spin coater, and then heated to 100 ° C. to remove the solvent. Next, (ii) the coated film was irradiated with an ArF laser to a portion corresponding to the pattern shape of the resistor (first laser irradiation). The irradiation conditions of the first laser irradiation were low fluence, the laser fluence was 10 mJ / cm ² , the repetition rate was 10 Hz, the number of irradiations was 1000 pulses, and the substrate temperature was room temperature. By such low fluence laser irradiation, the irradiated portion becomes a film that is not removed by etching in the next step.

Next, (iii) etching of hydrochloric acid (0.5N-HCl) was performed to remove the laser non-irradiated portion, and the resistor was patterned. Thereafter, (iv) the resistor was irradiated with ArF laser (second laser irradiation). The irradiation conditions of the second laser irradiation were high fluence, the laser fluence was 80 mJ / cm ² , the repetition rate was 10 Hz, the number of irradiations was 1000 pulses, and the substrate temperature was 400 ° C. By repeating 5 times the above-described steps (i) ~ (iv), on an alumina substrate to form a sample film of Sb (5%) doped with SnO ₂ film (having a thickness of 400 nm). The specific resistance of the sample film was 0.00557 Ω · cm.

(Sample 2)
In sample 2, the same weak laser irradiation and strong laser irradiation as in sample 1 were repeated, and the prepared sample film was subjected to heat treatment. That is, like the sample 1, the above-described steps (i) to (iv) are repeated five times to form a sample film having a film thickness of 400 nm, and then the sample film is formed at 600 ° C. using an electric furnace. Time heat treatment was performed. The specific resistance of this sample film was 0.00457 Ω · cm. Note that the heat treatment here is desirably performed at 300 to 800 ° C., and by performing the heat treatment in an oxygen atmosphere, it is possible to obtain a resistance film with little variation in resistance value over a long period of time.

(Sample 3)
(i) After applying the precursor solution to the substrate using a spin coater, the solvent was removed by heating to 100 ° C. Next, (ii) the coated film was irradiated with an ArF laser to a portion corresponding to the pattern shape of the resistor. The irradiation conditions here are laser fluence of 100 mJ / cm ² , repetition rate of 10 Hz, number of irradiations of 1000 pulses, and substrate temperature of room temperature. The above (i) to (ii) were repeated 5 times to produce a SnO ₂ film having a thickness of 200 nm. The specific resistance of the film according to Sample 3 was 0.194 Ω · cm.

  When the sample 1 and the sample 3 are compared with each other, it is clear that the sample 1 can produce a tin oxide thin film having a low resistance value by performing laser irradiation while heating the substrate in the second laser irradiation step. .

(Sample 4)
For sample 4, (i) the precursor solution was applied to the substrate using a spin coater, and then the solvent was removed by heating to 100 ° C. Next, (ii) the coated film was irradiated with an ArF laser to a portion corresponding to the pattern shape of the resistor (first laser irradiation). As for the laser irradiation conditions, the laser fluence is 100 mJ / cm ² , the repetition rate is 50 Hz, the number of irradiations is 1500 pulses, and the substrate temperature is room temperature. Furthermore, (iii) the resistor was irradiated with ArF laser (second laser irradiation). The irradiation conditions here are high fluence, laser fluence is 100 mJ / cm ² , repetition rate is 10 Hz, number of irradiation is 1000 pulses, and substrate temperature is room temperature. Then, above steps (i) ~ a (iii) repeated 5 times, the film thickness creates a SnO ₂ film of 200 nm. The specific resistance of the film in Sample 4 was 0.082 Ω · cm.

  In comparison between Sample 1 and Sample 3 and Sample 4, it became clear that a low resistance tin oxide thin film can be produced by laser irradiation while heating the substrate in the second laser irradiation step. The heating temperature in the second laser irradiation step is preferably 200 to 500 ° C. Note that the resistance film can be formed even if the second laser irradiation step is performed in a non-heated state, that is, at room temperature, in the same manner as the first laser irradiation step. In the first laser irradiation step, the substrate temperature may be adjusted in the range of room temperature to 500 ° C. Also in the first laser irradiation step, a tin oxide thin film having a low specific resistance can be formed by heating the substrate. The substrate temperature is preferably 200 to 500 ° C. In addition, heating the substrate in advance in both the first laser irradiation step and the second laser irradiation step contributes to lowering the resistance of the formed resistance film and stabilizing the characteristics.

(Sample 5)
For sample 5, (i) the precursor solution was applied to the substrate using a spin coater, and then heated to 100 ° C. to remove the solvent. Next, (ii) Excimer lamp (222 nm) irradiation was performed on the coated film. The irradiation time was 5 minutes and the substrate temperature was room temperature. Furthermore, the unirradiated part was removed by (iii) hydrochloric acid (1N-HCl) etching. (Iv) The resistor was irradiated with ArF laser. The laser irradiation conditions were high fluence, the laser fluence was three stages, that is, 50 mJ / cm ² , 100 mJ / cm ² , 120 mJ / cm ² , the repetition rate was 10 Hz, the number of irradiation was 2000 pulses, and the substrate temperature was 400 ° C. . Here, the above steps (i) to (iv) were repeated five times to produce a 400 nm thick SnO ₂ film.

The specific resistance of the sample film in each of the laser fluences was as follows.
Laser fluence 50 mJ / cm ² : 0.134 Ω · cm
Laser fluence 100 mJ / cm ² : 0.0143 Ω · cm
Laser fluence 120 mJ / cm ² : 0.0169 Ω · cm

  As can be seen from the sample 1 irradiated with the laser and the sample 5 irradiated with the excimer lamp, using a laser for the first stage irradiation is effective in producing a desired tin oxide thin film.

(Sample 6)
For sample 6, (i) the precursor solution was applied to the substrate using a spin coater, and then heated to 100 ° C. to remove the solvent. Next, (ii) Excimer lamp (222 nm) irradiation was performed on the coated film. The irradiation time was 5 minutes and the substrate temperature was room temperature. Then, (iii) heat treatment was performed in an electric furnace maintained at 600 ° C. Two types of samples were prepared as the heat treatment here: a sample with a heat treatment time of 5 minutes and a sample with a heat treatment time of 10 minutes. The series of steps (i) to (iii) was repeated 5 times to produce a SnO ₂ film having a thickness of 200 nm.

The specific resistance of the film according to Sample 6 was as follows for each of the heat treatment times.
5-minute heat treatment: 0.0514Ω · cm
Heat treatment for 10 minutes: 0.04796 Ω · cm

  From the comparison between Sample 1 and Sample 6, a low-resistance thin film cannot be obtained even when excimer lamp irradiation and heat treatment at 600 ° C. are performed, and laser irradiation is necessary to produce a desired tin oxide thin film. I understand.

Note that the oxide is not limited to the above-described examples of the metal forming the resistor substance. For example, at least one of antimony, tantalum, and niobium is added to tin oxide, and in addition, In is added. Also good. In the above-described embodiment, an alumina substrate is used as a support substrate. However, the present invention is not limited to this. For example, an organic substrate, a glass substrate, strontium titanate (SrTiO ₃ ), lanthanum aluminate (LaAlO). _3), magnesium oxide (MgO), lanthanum oxide, strontium tantalum aluminum _{((La x Sr 1-x} ) (Al x Ta 1-x) O 3), neodymium gallate (NdGaO _3), yttrium aluminate (YAlO ₃₎ single A substrate containing one kind selected from a crystal, aluminum oxide (Al ₂ O ₃ ), yttria-stabilized zirconia ((Zr, y) O ₂ , YSZ), titanium oxide, and the like can also be used.

  Further, as the metal organic compound in this embodiment, it is preferable to use one or more selected from β-diketonato, long-chain alkoxide (C is 6 or more), and organic acid salt containing halogen. Furthermore, it is effective for adjusting the resistance and improving the stability that the tin oxide film after laser irradiation is oxidized at a temperature of about 300 ° C. to 800 ° C. in oxygen and air.

  As described above, according to the embodiment of the present invention, a precursor solution of a metal organic compound composed of an organometallic compound containing tin and at least one metal selected from antimony, tantalum, and niobium is used as alumina. After coating on a support such as a substrate and drying, patterning is performed by irradiating a weak laser, and unirradiated portions are removed with an acid. Then, the substrate is heated to 200 ° C. to 500 ° C. and irradiated with a strong laser to be converted into a crystalline thin film. This makes it possible to manufacture a thin film of a resistor thin film at a low temperature and a high speed, that is, a tin oxide thin film with a significantly shortened heat treatment time.

  In addition, when a patterned tin oxide resistor film is formed, it is not always necessary to heat to a high temperature. Therefore, a resistor thin film having excellent resistor characteristics that can be applied to various substrates and has high manufacturing efficiency. It becomes possible to form. Furthermore, by precisely controlling the use of a mask and the irradiation position of ultraviolet light, patterning necessary for the element can be performed simultaneously with film formation.

DESCRIPTION OF SYMBOLS 1 Board | substrate 2 Resistor 3 Break groove 5 Surface base electrode 6 Back base electrode 7 Trimming trace 10 Overcoat 12 Marking 20 End surface base electrode 21 Solder film 23 Nickel film

Claims (8)

Preparing a precursor solution comprising an organometallic compound containing tin and at least one metal selected from antimony, tantalum, and niobium;
Applying the precursor solution on a substrate to form an organic compound layer;
A first laser irradiation step of irradiating the organic compound layer with an ultraviolet laser in a pattern corresponding to the shape of the resistor;
Removing the unirradiated portion of the ultraviolet laser from the organic compound layer and performing patterning;
And a second laser irradiation step of irradiating the organic compound layer after the patterning with an ultraviolet laser.   2. The method of manufacturing a resistor film according to claim 1, wherein the second laser irradiation step is performed while heating the substrate to 200 ° C. to 500 ° C. 3. The method for producing a resistor film according to claim 1, wherein the metal organic compound is a metal organic metal salt or a metal acetylacetonate. The method for producing a resistor film according to claim 1, wherein ultraviolet energy in the second laser irradiation step is higher than irradiation energy in the first laser irradiation step. The method of manufacturing a resistor film according to claim 1, wherein the substrate is heat-treated at 300 ° C. to 800 ° C. after the second laser irradiation step. The method for producing a resistor film according to claim 1, wherein the unirradiated portion is removed by an acid solution. The method of manufacturing a resistor film according to claim 1, wherein a resistor film having a predetermined film thickness is formed by repeating each step a plurality of times. A resistor film manufactured by the method according to claim 1.

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