JP2010141067A - Drive device of semiconductor light source - Google Patents

Drive device of semiconductor light source Download PDF

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JP2010141067A
JP2010141067A JP2008315184A JP2008315184A JP2010141067A JP 2010141067 A JP2010141067 A JP 2010141067A JP 2008315184 A JP2008315184 A JP 2008315184A JP 2008315184 A JP2008315184 A JP 2008315184A JP 2010141067 A JP2010141067 A JP 2010141067A
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light source
semiconductor light
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Shigenori Shibue
重教 渋江
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Mitsubishi Electric Corp
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Abstract

【課題】半導体光源の駆動回路に於ける半導体スイッチの消費電力を抑制する。
【解決手段】スイッチ駆動回路8は、制御信号VcがLレベルにあるときには半導体スイッチ4をOFF状態に制御し、制御信号VcがHレベルにあるときには半導体スイッチ4をON状態に制御する。電流制御回路9は、電流設定電圧Vrefのレベル設定によって、制御信号VcがLレベルにあるときには定電流電源100が30Aの駆動電流をLED3に流す様に定電流電源100を制御し、制御信号VcがHレベルにあるときには定電流電源100が10Aの駆動電流を出力する様に定電流電源を制御する。
【選択図】図1
Power consumption of a semiconductor switch in a drive circuit of a semiconductor light source is suppressed.
A switch driving circuit controls a semiconductor switch to an OFF state when a control signal Vc is at an L level, and controls the semiconductor switch to an ON state when the control signal Vc is at an H level. The current control circuit 9 controls the constant current power supply 100 so that when the control signal Vc is at the L level by the level setting of the current setting voltage Vref, the constant current power supply 100 causes the driving current of 30 A to flow to the LED 3. When the current is at the H level, the constant current power supply 100 is controlled so that the constant current power supply 100 outputs a driving current of 10A.
[Selection] Figure 1

Description

この発明は、例えば発光ダイオード(以下「LED」と言う。)又は半導体レーザー等の半導体光源に用いられる駆動装置に関する。   The present invention relates to a driving device used for a semiconductor light source such as a light emitting diode (hereinafter referred to as “LED”) or a semiconductor laser.

従来の半導体光源の駆動装置は、定電流電源として構成されており、半導体光源に流れる電流を検出し、これをフィードバックしてPWM信号のデューティー比を変化させて出力電圧を調整し、結果的に半導体光源に流れる電流が一定値となる様に上記デューティー比を制御している。そして、半導体光源を遮断するときには、半導体光源と直列に接続されたスイッチを開状態とすることで、半導体光源に流れる電流を遮断する。   The conventional semiconductor light source driving device is configured as a constant current power source, detects the current flowing through the semiconductor light source, feeds back this, and adjusts the output voltage by changing the duty ratio of the PWM signal. The duty ratio is controlled so that the current flowing through the semiconductor light source becomes a constant value. And when interrupting | blocking a semiconductor light source, the electric current which flows into a semiconductor light source is interrupted by opening the switch connected in series with the semiconductor light source.

しかし、スイッチにより電流を遮断した場合には電流が殆ど流れなくなるため、再びスイッチを閉状態にした場合に、その直後にパルス状の電流が流れる、或いは、所望の電流に落ち着くまでに時間がかかるという問題点が発生していた。   However, when the current is cut off by the switch, almost no current flows. Therefore, when the switch is closed again, a pulsed current flows immediately after that, or it takes time to settle to the desired current. The problem that occurred.

この改善策として、PNPトランジスタによるスイッチをLEDと並列に配置し、PNPトランジスタをON状態とすることでLEDへの電流を遮断している(例えば、特許文献1参照。)。又、PNPトランジスタによるスイッチに代えて、MOSFETを上記スイッチとして使用している例もある(例えば、非特許文献1参照。)。   As an improvement measure, a switch by a PNP transistor is arranged in parallel with the LED, and the current to the LED is cut off by turning on the PNP transistor (see, for example, Patent Document 1). In addition, there is an example in which a MOSFET is used as the switch instead of a switch using a PNP transistor (see Non-Patent Document 1, for example).

特開平5−129665号公報(図1)Japanese Patent Laid-Open No. 5-129665 (FIG. 1) MAXIM社製MAX16818データシート、P1及びP19MAX16818 data sheet from MAXIM, P1 and P19

しかしながら、LEDが遮断されているOFF状態に於いては、定電流電源が出力する電流の殆どがMOSFET等の半導体スイッチ側に流れる。このため、高輝度LEDの様に、電流値が30Aを越える様な大きな電流が必要な場合に於いては、半導体スイッチに於ける消費電力は、(定電流電源より出力される半導体スイッチを流れる定電流の値)×(半導体スイッチのドレイン−ソース間電圧)の式で与えられるので、半導体スイッチの消費電力は格段に大きくなり、装置全体の電力効率の低下及びスイッチの発熱対策が、問題点として浮上する。   However, in the OFF state in which the LED is shut off, most of the current output from the constant current power source flows to the semiconductor switch side such as a MOSFET. For this reason, in the case where a large current exceeding 30 A is required, such as a high-intensity LED, the power consumption in the semiconductor switch (flows through the semiconductor switch output from the constant current power source). (Constant current value) x (Drain-source voltage of the semiconductor switch) The power consumption of the semiconductor switch is remarkably increased, and the power efficiency of the entire device is reduced and the heat generation of the switch is a problem. Emerge as.

この発明は、斯かる技術的懸案事項を解消すべく成されたものであり、その主目的は、半導体光源の駆動装置に於ける電力利用効率の向上化及び同駆動装置の小型化を通じたコストダウンの実現を図ることにある。   The present invention has been made to eliminate such technical concerns, and its main purpose is to improve the power use efficiency in the driving device of the semiconductor light source and to reduce the cost through the downsizing of the driving device. The goal is to realize down.

この発明の主題は、半導体光源の発光をON状態又はOFF状態に制御するための半導体光源の駆動装置であって、前記半導体光源を駆動する定電流電源と、前記半導体光源と並列に接続された半導体スイッチと、半導体光源ON/OFF制御信号を受信して、前記半導体光源ON/OFF制御信号が第1レベルにあるときには前記半導体スイッチをOFF状態に制御する一方、前記半導体光源ON/OFF制御信号が前記第1レベルと異なる第2レベルにあるときには前記半導体スイッチをON状態に制御するスイッチ駆動回路と、前記半導体光源ON/OFF制御信号、前記半導体光源が前記ON状態にあるときの第1駆動電流を示す第1情報、及び前記半導体光源が前記OFF状態にあるときの第2駆動電流を示す第2情報を受信して、前記半導体光源ON/OFF制御信号が前記第1レベルにあるときには前記定電流電源が前記第1駆動電流を出力する様に前記定電流電源を制御する一方、前記半導体光源ON/OFF制御信号が前記第2レベルにあるときには前記定電流電源が前記第1駆動電流よりも小さな値を有する前記第2駆動電流を出力する様に前記定電流電源を制御する電流制御回路とを備えたことを特徴とする。   The subject of the present invention is a semiconductor light source driving device for controlling the light emission of a semiconductor light source to an ON state or an OFF state, the constant current power source driving the semiconductor light source being connected in parallel with the semiconductor light source When a semiconductor switch and a semiconductor light source ON / OFF control signal are received and the semiconductor light source ON / OFF control signal is at the first level, the semiconductor switch is controlled to be in an OFF state, while the semiconductor light source ON / OFF control signal is Is a second level different from the first level, a switch drive circuit for controlling the semiconductor switch to an ON state, the semiconductor light source ON / OFF control signal, and a first drive when the semiconductor light source is in the ON state Receiving first information indicating current and second information indicating second driving current when the semiconductor light source is in the OFF state; When the semiconductor light source ON / OFF control signal is at the first level, the constant current power source controls the constant current power source so as to output the first drive current, while the semiconductor light source ON / OFF control signal is And a current control circuit for controlling the constant current power supply so that the constant current power supply outputs the second drive current having a value smaller than the first drive current when in the second level. To do.

本発明の主題によれば、半導体光源がOFF状態にある期間、即ち、半導体スイッチがON状態にある時に定電流電源が出力する電流の値を、半導体光源がON状態にある期間の定電流電源の出力電流よりも小さくなる様に、電流制御回路は定電流電源を制御することとしているので、半導体スイッチで生じ得る消費電力を低減化することが出来、しかも、放熱器等の冷却装置を必要としないので、駆動装置の小型化及び軽量化をも図ることが出来る。従って、駆動装置に於ける電力利用効率の向上化と駆動装置のコストダウン化とを実現することが出来る。   According to the subject matter of the present invention, a constant current power source during a period when the semiconductor light source is in an OFF state, that is, a value of a current output from the constant current power source when the semiconductor switch is in an ON state. Since the current control circuit controls the constant current power supply so that the output current becomes smaller than the output current, the power consumption that can occur in the semiconductor switch can be reduced, and a cooling device such as a radiator is required. Therefore, the drive device can be reduced in size and weight. Therefore, it is possible to improve the power use efficiency in the driving device and reduce the cost of the driving device.

以下、この発明の主題の様々な具体化を、添付図面を基に、その効果・利点と共に、詳述する。   Hereinafter, various embodiments of the subject of the present invention will be described in detail along with the effects and advantages thereof with reference to the accompanying drawings.

(実施の形態1)
図1は、本実施の形態に係る半導体光源の駆動装置の構成を示すブロック図であり、本実施の形態では、半導体光源として、LEDを使用する一例を示す。又、図2は、図1の半導体光源の駆動装置の動作を示すタイミングチャートである。
(Embodiment 1)
FIG. 1 is a block diagram illustrating a configuration of a semiconductor light source driving device according to the present embodiment. In the present embodiment, an example in which an LED is used as a semiconductor light source is illustrated. FIG. 2 is a timing chart showing the operation of the semiconductor light source driving device of FIG.

図1に於いて、DC/DC降圧電源2、電流検出用抵抗5、及び差動アンプ6は、定電流電源100を構成する。電源入力端子1より、定電流電源100の源となる入力電圧12Vが供給され、その結果、入力電圧12VはDC/DC降圧電源2に供給される。DC/DC降圧電源2は、入力電圧12VをLED3のフォワード電圧(順方向電圧)に変換し、フォワード電圧をLED3に印加することで、LED3を駆動する。ここで、LED3のフォワード電圧は、LED自体のプロセス等によって変化する。例えば、赤色のLEDの場合には、フォワード電圧は約2.5Vであり、緑色の場合には約5V、青色の場合には約4.5Vとなる。又、DC/DC降圧電源2により生成されてLED3に流れる電流Iledは、プロジェクター等に使用される高輝度LEDの場合には、30A程度の大きな値となる。   In FIG. 1, the DC / DC step-down power supply 2, the current detection resistor 5, and the differential amplifier 6 constitute a constant current power supply 100. An input voltage 12V serving as a source of the constant current power supply 100 is supplied from the power supply input terminal 1, and as a result, the input voltage 12V is supplied to the DC / DC step-down power supply 2. The DC / DC step-down power supply 2 drives the LED 3 by converting the input voltage 12V into the forward voltage (forward voltage) of the LED 3 and applying the forward voltage to the LED 3. Here, the forward voltage of the LED 3 varies depending on the process of the LED itself. For example, in the case of a red LED, the forward voltage is about 2.5V, about 5V for green, and about 4.5V for blue. Further, the current Iled generated by the DC / DC step-down power supply 2 and flowing through the LED 3 is a large value of about 30 A in the case of a high-intensity LED used for a projector or the like.

図1に示す様に、LED3と電源グランドとの間には、電流検出用抵抗5が接続されている。電流検出用抵抗5に於いては、LED3に流れる駆動電流Iledの値と電流検出用抵抗5の値の積で示される電圧Vsenseが発生する。この電圧Vsenseと、後述する電流設定回路9の出力電圧値Vrefとが差動アンプ6によって比較され、差動アンプ6が出力する比較結果に応じて、DC/DC降圧電源2のPWM(Pulse Width Modulation)のデューティー比は制御される。仮にVref>Vsenseの場合には、DC/DC降圧電源2は、差動アンプ6の比較結果を受けて、LED3の電流値が比較的小さいと判断し、PWMのデューティー比を上昇させる。他方、Vref<Vsenseの場合には、DC/DC降圧電源2は、差動アンプ6の比較結果を受けて、LED3の電流値が比較的大きいと判断して、PWMのデューティー比を下降させる。以上の様なフィードバック動作により、Vref=Vsenseとなる様に、DC/DC降圧電源2は、PWMのデューティー比を制御する。   As shown in FIG. 1, a current detection resistor 5 is connected between the LED 3 and the power supply ground. In the current detection resistor 5, a voltage Vsense indicated by the product of the value of the drive current Iled flowing through the LED 3 and the value of the current detection resistor 5 is generated. This voltage Vsense and an output voltage value Vref of a current setting circuit 9 to be described later are compared by the differential amplifier 6, and the PWM (Pulse Width) of the DC / DC step-down power supply 2 is selected according to the comparison result output by the differential amplifier 6. Modulation) duty ratio is controlled. If Vref> Vsense, the DC / DC step-down power supply 2 receives the comparison result of the differential amplifier 6, determines that the current value of the LED 3 is relatively small, and increases the PWM duty ratio. On the other hand, when Vref <Vsense, the DC / DC step-down power supply 2 receives the comparison result of the differential amplifier 6 and determines that the current value of the LED 3 is relatively large, and lowers the PWM duty ratio. By the feedback operation as described above, the DC / DC step-down power supply 2 controls the duty ratio of PWM so that Vref = Vsense.

次に、半導体光源ON/OFF制御信号入力端子7より、図2の(A)にそのパルス信号の波形が示された、LED3のON状態又はOFF状態を制御する半導体光源ON/OFF制御信号Vcが、スイッチ駆動回路8に入力される。図2の(A)に於いて、半導体光源ON/OFF制御信号が“L”レベル(第1レベルに相当。)にあるときには、LED3はON状態にあり、例えば30Aもの大きな駆動電流(第1駆動電流に相当。)IledがLED3に流れている。他方、半導体光源ON/OFF制御信号Vcが“H”レベル(第2レベルに相当。)にあるときには、LED3はOFF状態にある。即ち、スイッチ駆動回路8は、図2の(B)に示す様な波形のパルス信号Vsを、LED3に並列接続された半導体スイッチ(ここではn型MOSFET)4のゲート電極に出力することによって、半導体スイッチ4のOFF/ON状態を制御する。半導体スイッチ4は、時刻t1に於いてゲート電極及びソース電極間の電圧が“L”レベルから“H”レベルとなった場合に、ドレイン領域−ソース領域間の抵抗値が低下して、導通状態(ON状態)となる。その結果、DC/DC降圧電源2が出力する駆動電流Iledの殆ど(第2駆動電流に相当。)は、LED3よりも低抵抗状態にある半導体スイッチ4側に流れ込むこととなり、LED3はON状態から遮断状態ないしはOFF状態へと変移する。その場合に於いても、定電流電源100は、常に一定の電流を流す様に制御されている。従って、半導体スイッチ4での消費電力をPswitchとして表示し、半導体スイッチ4のON抵抗をRonとして表示するときに、Iled=30A及びRon=5mΩであるとすると、
Pswitch=(Iled)2×Ron=4.5Wとなる。
Next, from the semiconductor light source ON / OFF control signal input terminal 7, the semiconductor light source ON / OFF control signal Vc for controlling the ON state or OFF state of the LED 3 whose waveform of the pulse signal is shown in FIG. Is input to the switch drive circuit 8. In FIG. 2A, when the semiconductor light source ON / OFF control signal is at the “L” level (corresponding to the first level), the LED 3 is in the ON state, for example, a large drive current (first 1A) of 30 A. (This corresponds to the drive current.) Iled is flowing in the LED 3. On the other hand, when the semiconductor light source ON / OFF control signal Vc is at the “H” level (corresponding to the second level), the LED 3 is in the OFF state. That is, the switch drive circuit 8 outputs a pulse signal Vs having a waveform as shown in FIG. 2B to the gate electrode of the semiconductor switch (here, n-type MOSFET) 4 connected in parallel to the LED 3. The OFF / ON state of the semiconductor switch 4 is controlled. When the voltage between the gate electrode and the source electrode changes from the “L” level to the “H” level at time t1, the semiconductor switch 4 is in a conductive state because the resistance value between the drain region and the source region decreases. (ON state). As a result, most of the drive current Iled output from the DC / DC step-down power supply 2 (corresponding to the second drive current) flows into the semiconductor switch 4 that is in a lower resistance state than the LED 3, and the LED 3 is in the ON state. It changes to the cut-off state or OFF state. Even in this case, the constant current power supply 100 is controlled so as to always flow a constant current. Therefore, when the power consumption in the semiconductor switch 4 is displayed as Pswitch and the ON resistance of the semiconductor switch 4 is displayed as Ron, if Iled = 30 A and Ron = 5 mΩ,
Pswitch = (Iled) 2 × Ron = 4.5W.

又、定電流電源100の構成によっては、定電流電源100の最低出力電圧が制限される場合もあり、その場合の半導体スイッチ4の消費電力Pswitchは、半導体スイッチ4のドレイン−ソース間電圧Vdsを0.6Vとすれば、
Pswitch=Iled×Vds=30A×0.6V=18Wとなる。
Further, depending on the configuration of the constant current power supply 100, the minimum output voltage of the constant current power supply 100 may be limited. In this case, the power consumption Pswitch of the semiconductor switch 4 is the drain-source voltage Vds of the semiconductor switch 4. If 0.6V,
Pswitch = Iled × Vds = 30 A × 0.6 V = 18 W.

そこで、本実施の形態では、図2の(C)に示す様な波形を有する電流設定回路9の出力信号(電流設定用電圧)Vrefのレベル設定により、定電流電源100が出力する駆動電流(設定電流)を、第1駆動電流(例えば30A)から、第1駆動電流よりも小さな値(例えば10A)を有する第2駆動電流に変化させる。即ち、電流設定回路9は、(1)半導体光源ON/OFF制御信号入力端子7から入力される既述の半導体光源ON/OFF制御信号Vc、並びに、駆動電流情報入力端子10から共に入力される予め設定された情報である、(2)LED3がON状態にあるときにLED3に流れる第1駆動電流の値(例えば30A)を示すLED駆動電流情報(第1情報に相当。)及び(3)LED3がOFF状態にあるときにDC/DC降圧電源2が出力する第2駆動電流の値(例えば10A)を示す電流情報(第2情報に相当。)を受信して、定電流電源100の差動アンプ6のマイナス端子に印加して定電流電源100を制御するための電流設定用電圧Vrefを作成する。   Therefore, in the present embodiment, the drive current (current output from the constant current power supply 100) is set by setting the level of the output signal (current setting voltage) Vref of the current setting circuit 9 having a waveform as shown in FIG. The setting current is changed from the first driving current (for example, 30 A) to the second driving current having a value (for example, 10 A) smaller than the first driving current. That is, the current setting circuit 9 is (1) the semiconductor light source ON / OFF control signal Vc input from the semiconductor light source ON / OFF control signal input terminal 7 and the drive current information input terminal 10 together. LED drive current information (corresponding to the first information) and (3), which are preset information, (2) a value of a first drive current (for example, 30 A) flowing through the LED 3 when the LED 3 is in the ON state. The current information (corresponding to the second information) indicating the value (for example, 10 A) of the second driving current output from the DC / DC step-down power supply 2 when the LED 3 is in the OFF state is received, and the difference between the constant current power supplies 100 is received. A current setting voltage Vref for controlling the constant current power supply 100 by applying to the negative terminal of the dynamic amplifier 6 is created.

LED3のOFF期間(図2の(C)に示す時刻t1〜時刻t2)に半導体スイッチ4側に流れる第2駆動電流の値を例えば10Aに設定すれば(第2情報)、電流設定用電圧Vrefの差動アンプ6のマイナス端子への印加により、半導体スイッチ4の消費電力Pswitchは、Pswitch=(Iled)2×Ron=0.5Wとなる。この程度の低消費電力であれば、放熱器等を使用せずに、プリント基板等で以って十分に半導体スイッチ4を冷却することが可能である。従って、LED3のOFF期間に於ける半導体スイッチ4の低消費電力化(即ち、電力利用効率の向上化の達成)、及び、駆動装置の小型化・軽量化の実現を通じた駆動装置のコストダウンを図ることが出来る。 If the value of the second drive current flowing to the semiconductor switch 4 side is set to, for example, 10 A during the OFF period of the LED 3 (time t1 to time t2 shown in FIG. 2C) (second information), the current setting voltage Vref Is applied to the negative terminal of the differential amplifier 6, the power consumption Pswitch of the semiconductor switch 4 becomes Pswitch = (Iled) 2 × Ron = 0.5 W. With such low power consumption, it is possible to sufficiently cool the semiconductor switch 4 with a printed circuit board or the like without using a radiator or the like. Therefore, it is possible to reduce the power consumption of the semiconductor switch 4 during the OFF period of the LED 3 (that is, to achieve improvement in power utilization efficiency) and to reduce the cost of the driving device through the realization of the downsizing and weight reduction of the driving device. I can plan.

しかも、図2の(C)に示す様に、LED3のOFF期間内の“L”レベルから“H”レベルへの立ち上がり期間Δt内に、設定電流(駆動電流)を10Aから30Aにスロープ状SLに戻すことにより、LED3をON状態に制御した場合に於いても、例えば30Aもの大きな値を有する第1駆動電流Iledで以ってLED3を高速に駆動することが可能となる。このスロープ状SLの制御は、LED3のON状態からOFF状態への遷移期間(時刻t1〜時刻(t1+期間Δt))の場合に於いても同様に実行される。   Moreover, as shown in FIG. 2C, the set current (drive current) is sloped from 10 A to 30 A within the rising period Δt from the “L” level to the “H” level within the OFF period of the LED 3. Thus, even when the LED 3 is controlled to be in the ON state, the LED 3 can be driven at a high speed with the first drive current Iled having a large value of, for example, 30 A. The control of the slope SL is similarly performed in the transition period (time t1 to time (t1 + period Δt)) of the LED 3 from the ON state to the OFF state.

LED3のOFF期間(時刻t1〜時刻t2)に於ける第2駆動電流Iledの設定電流値及び電流設定用電圧VrefのスロープSLの制御については、定電流電源100の応答特性に依存するものである。即ち、定電流電源100の応答特性が比較的良ければ、第2駆動電流Iledの設定電流値を10Aよりも更に低く設定することも可能であり、使用する定電流電源100の応答特性に合わせて上記第2情報を設定すれば良い。   Control of the set current value of the second drive current Iled and the slope SL of the current setting voltage Vref in the OFF period (time t1 to time t2) of the LED 3 depends on the response characteristics of the constant current power supply 100. . That is, if the response characteristic of the constant current power supply 100 is relatively good, the set current value of the second drive current Iled can be set to be lower than 10 A, and is matched to the response characteristic of the constant current power supply 100 to be used. The second information may be set.

(付記)
以上、本発明の実施の形態を詳細に開示し記述したが、以上の記述は本発明の適用可能な局面を例示したものであって、本発明はこれに限定されるものではない。即ち、記述した局面に対する様々な修正や変形例を、この発明の範囲から逸脱することの無い範囲内で考えることが可能である。
(Appendix)
While the embodiments of the present invention have been disclosed and described in detail above, the above description exemplifies aspects to which the present invention can be applied, and the present invention is not limited thereto. In other words, various modifications and variations to the described aspects can be considered without departing from the scope of the present invention.

本発明は、例えば、プロジェクターの光源用駆動に適用して好適である。特に、1チップのDigital Mirror Deviceをライトバルブとして用いる映像表示システムに於いては、R,G,B三色の各半導体光源の発光タイミングを時分割で切り替える必要があるため、この様なシステムに対して本発明を有効に利用することが可能である。又、一般照明分野に於いても、PWM駆動による輝度制御が一般的であるが、半導体スイッチの制御信号としてPWM信号を供給するときには、本発明を適用して同様の効果が得られる。   The present invention is suitable, for example, for driving a light source for a projector. In particular, in an image display system that uses a single-chip Digital Mirror Device as a light valve, it is necessary to switch the light emission timing of each of the R, G, and B color semiconductor light sources in a time-sharing manner. In contrast, the present invention can be effectively used. Also, in the general lighting field, brightness control by PWM drive is common, but when a PWM signal is supplied as a control signal for a semiconductor switch, the same effect can be obtained by applying the present invention.

本発明の実施の形態1に係る半導体光源の駆動装置の構成を示すブロック図である。It is a block diagram which shows the structure of the drive device of the semiconductor light source which concerns on Embodiment 1 of this invention. 図1の半導体光源の駆動装置の動作を示すタイミングチャートである。2 is a timing chart showing the operation of the semiconductor light source driving device of FIG. 1.

符号の説明Explanation of symbols

1 電源入力端子、2 DC/DC降圧電源、3 LED、4 半導体スイッチ、5 電流検出用抵抗、6 差動アンプ、7 半導体光源ON/OFF制御信号入力端子、8 スイッチ駆動回路、9 電流設定回路、10 駆動電流情報入力端子、100 定電流電源。   1 power input terminal, 2 DC / DC step-down power supply, 3 LED, 4 semiconductor switch, 5 current detection resistor, 6 differential amplifier, 7 semiconductor light source ON / OFF control signal input terminal, 8 switch drive circuit, 9 current setting circuit 10 Driving current information input terminal, 100 constant current power supply.

Claims (2)

半導体光源の発光をON状態又はOFF状態に制御するための半導体光源の駆動装置であって、
前記半導体光源を駆動する定電流電源と、
前記半導体光源と並列に接続された半導体スイッチと、
半導体光源ON/OFF制御信号を受信して、前記半導体光源ON/OFF制御信号が第1レベルにあるときには前記半導体スイッチをOFF状態に制御する一方、前記半導体光源ON/OFF制御信号が前記第1レベルと異なる第2レベルにあるときには前記半導体スイッチをON状態に制御するスイッチ駆動回路と、
前記半導体光源ON/OFF制御信号、前記半導体光源が前記ON状態にあるときの第1駆動電流を示す第1情報、及び前記半導体光源が前記OFF状態にあるときの第2駆動電流を示す第2情報を受信して、前記半導体光源ON/OFF制御信号が前記第1レベルにあるときには前記定電流電源が前記第1駆動電流を出力する様に前記定電流電源を制御する一方、前記半導体光源ON/OFF制御信号が前記第2レベルにあるときには前記定電流電源が前記第1駆動電流よりも小さな値を有する前記第2駆動電流を出力する様に前記定電流電源を制御する電流制御回路とを備えたことを特徴とする、
半導体光源の駆動装置。
A semiconductor light source driving device for controlling light emission of a semiconductor light source to an ON state or an OFF state,
A constant current power source for driving the semiconductor light source;
A semiconductor switch connected in parallel with the semiconductor light source;
When the semiconductor light source ON / OFF control signal is received and the semiconductor light source ON / OFF control signal is at the first level, the semiconductor switch is controlled to be in the OFF state, while the semiconductor light source ON / OFF control signal is the first light source. A switch driving circuit for controlling the semiconductor switch to an ON state when the second level is different from the level;
The semiconductor light source ON / OFF control signal, the first information indicating the first driving current when the semiconductor light source is in the ON state, and the second information indicating the second driving current when the semiconductor light source is in the OFF state When the information is received and the semiconductor light source ON / OFF control signal is at the first level, the constant current power supply is controlled so that the constant current power supply outputs the first drive current, while the semiconductor light source ON A current control circuit for controlling the constant current power supply so that the constant current power supply outputs the second drive current having a value smaller than the first drive current when the / OFF control signal is at the second level; It is characterized by having,
Drive device for semiconductor light source.
請求項1記載の半導体光源の駆動装置であって、
前記半導体光源ON/OFF制御信号が前記第2レベルにあるときには、前記第2駆動電流の値が前記定電流電源の応答特性に応じたスロープを有する様に、前記電流制御回路は前記定電流電源を制御することを特徴とする、
半導体光源の駆動装置。
A driving device for a semiconductor light source according to claim 1,
When the semiconductor light source ON / OFF control signal is at the second level, the current control circuit has the constant current power supply so that the value of the second drive current has a slope corresponding to the response characteristic of the constant current power supply. Characterized by controlling
Drive device for semiconductor light source.
JP2008315184A 2008-12-11 2008-12-11 Drive device of semiconductor light source Pending JP2010141067A (en)

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Country Link
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