JP2010135645A - Film forming method and film forming apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a film forming method and a film forming apparatus which are low cost and can execute heat treatments, such as, high temperature annealing of a film or can form a thermal CVD film on the surface of a substrate, while keeping the substrate at a low temperature. <P>SOLUTION: A plurality of high-temperature gas beams 2b, 2c are emitted substantially vertical to the surface of a substrate 1 supported on a supporting platen 4 at a predetermined time interval, and a film that is located on only the substrate surface 1a can be annealed. Together with this, a pyrolysis gas 7 for forming a film having deposition performance is supplied to a high-temperature space 6 defined by the high-temperature gas beams 2b, 2c and the surface of the substrate 1, and the supplied gas is pyrolyzed to generate radicals and is emitted to the surface of the substrate 1, and thereby, a thermal CVD film can be formed. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to an improvement in film formation suitable for manufacturing, for example, a large-area electronic device. For example, a support base that supports a substrate on a substrate such as a glass substrate that cannot be heated to a high temperature or a substrate that has already completed a wiring process. TECHNICAL FIELD The present invention relates to a method for forming a film that grows or heats at a high temperature that requires a temperature higher than the above temperature, such as a silicon film, a silicon oxide film, a silicon nitride film, or a ternary or more compound film, and a film forming apparatus therefor .

  In general, in some devices in which a film is formed on a substrate, the substrate must be kept at a low temperature. For example, there are a glass substrate as a substrate and a silicon substrate after a required film is already formed. As a device having a thin film grown on a glass substrate, there are so-called large-area electronic devices such as a liquid crystal display device (LCD), an organic EL (electrominescence) display device, and a solar cell.

  Thin films are often used as amorphous films, crystal films, insulating films, and protective films in any device.

  The film to be grown on the substrate is, for example, non-equilibrium growth (growth without reversible reaction) in the case of a plasma-excited amorphous thin film. Therefore, it is more unstable in composition and structure than a high temperature thermal CVD (chemical vapor deposition) film. For this reason, the film contains impurities such as hydrogen, its structure is not stable, it is easy to absorb moisture, and its density is poor.

  Therefore, for example, in order to form a film on a glass substrate and perform a heat treatment such as annealing, or a process of growing, or some kind of processing on the film, the temperature of the processing step is set at the glass softening point or It is limited to a phase change point (for example, 300 ° C. to 500 ° C.) or less depending on the type. Because of this limitation, a plasma growth film that can be grown at 400 ° C. or lower or a film that has been surface annealed with a laser or the like is used as the thin film.

  Thus, the technique of processing the substrate at a low temperature is necessary for a device manufacturing process using a glass substrate. In addition, it has recently become necessary to perform another process on a substrate that has already been processed in order to stack the devices by bonding the silicon wafers on which the devices are manufactured. For example, an electrode (through electrode) that penetrates the silicon substrate is formed after the wiring process is completed. In general, Cu is embedded in deep through holes, but in order to prevent Cu from diffusing into the substrate silicon, a thick oxide film or nitride film is grown inside the holes. However, even when grown at a low temperature of 400 ° C. or lower, a dense film cannot be obtained, and even when grown on the surface, it does not grow sufficiently to the inner surface or the bottom surface. Growth needs to occur on the entire surface. Further, even when grown in a low temperature gas atmosphere, the surface movement of the active species is insufficient, so that the inner surface of the hole cannot be coated with a uniform thickness. This hinders wafer bonding manufacture. Because of such a background, there is a conventional technique for growing a film at a low temperature (for example, see Non-Patent Document 1).

  In thermal excitation chemical vapor deposition (CVD), a substrate temperature of at least 500 ° C. is generally required at least. However, plasma enhanced chemical vapor deposition is effective for growing a film flat on a substrate surface held at a low temperature. For example, ECR (Electron Cyclotron Resonance) plasma CVD can grow a film even at a substrate temperature of 300 ° C. or lower, but it is used for bottom-up growth because it has poor coverage. Further, unlike plasma, ECR plasma has a limitation on the wavelength of microwaves and cannot be freely expanded, and therefore cannot be applied to large substrates such as glass. In addition, there is a thermal catalyst CVD that makes tungsten filaments contact a film-forming gas to create decomposition species, but in order to make up for the shortcomings of tungsten entering the film and the lack of compactness, an additional step of adding ion bombardment is required. is necessary. This hinders extensibility, which increases the size of the apparatus.

As is conventionally known, thermal CVD using a high temperature of 500 ° C. or higher is ideal, and since the film has a proven record in the semiconductor industry in terms of characteristics, a thermal CVD film can be formed without increasing the temperature of the substrate. If it can be grown, it is the most reliable and reliable method for forming a film.
"Development of low-temperature growth technology for polycrystalline SiGe thin film by reactive thermal CVD" Tokyo Institute of Technology Graduate School of Science and Engineering, Image Information Engineering Laboratory Hanna Laboratory [Search June 12, 2008] Internet (URL: http: //www.isl.titech.ac.jp-hanna/cvd.html)

  However, whether the substrate is a glass plate or a silicon wafer that has been fabricated, it is desirable to keep the substrate at a temperature of 500 ° C. or less, depending on the exposure time.

  In order to grow such a reliable thin film on a substrate at such a low temperature, there are several problems with the current technology.

  For example, a film grown from silane gas by plasma CVD (chemical vapor deposition) at 300 ° C. is amorphous and contains dangling bonds and hydrogen, and the initial performance of electron mobility is 1000 times that of single crystal or polysilicon. Is also low. Since there is aging, there is no choice but to design the product within the range of low performance that can be obtained.

  Further, when an oxide film is grown in a hole deeper than 10 μm by plasma CVD, the film does not grow uniformly on the side surface.

  The present invention has been made in view of such circumstances, and its purpose is to heat the film on the surface of the substrate while maintaining the substrate at a low temperature, and perform a heat treatment such as annealing, or additionally perform thermal CVD. An object is to provide an inexpensive film forming method and film forming apparatus capable of forming a film on a substrate surface.

  The principle of the present invention and the film forming method will be described below with reference to FIGS.

  In general, when the heated gas is blown substantially perpendicularly to the surface of the substrate, the temperature of the gas can be transmitted to the substrate. Further, the gas flows parallel to the flat substrate surface. Then, a stagnant layer is formed in parallel with the substrate, and this stagnant layer becomes a thermal resistance layer, and the temperature of the gas cannot be transmitted to the substrate in a short time. In other words, it can be said that the transmission efficiency is lowered.

  However, when the hot gas is squeezed into a beam shape and sprayed or collided substantially perpendicularly to the substrate surface and not parallel to the substrate surface, the stagnant layer becomes thin. Alternatively, the stagnant layer can be made thin so that it is substantially impossible. If the stagnant layer is thin, the temperature of the hot gas can be efficiently transmitted to the substrate. That is, the substrate surface efficiently receives heat from the hot gas incident vertically. However, the entire substrate has a specific thermal conductivity depending on the material, and if the back side of the substrate is cooled by refrigerant or heat dissipation, it has a heat sink with a certain heat capacity, so the temperature rises and the temperature of the gas Reaching is limited to the substrate surface where the gas collides. When this principle is used, only the substrate surface is locally and preferentially heated so that the back surface and the inside of the substrate can be maintained at a certain temperature or less, and melting, softening, or phase change of the entire substrate can be prevented.

  FIG. 2 schematically illustrates this principle. That is, when the hot gas 2 heated by a heating device (not shown) is blown to the surface of the substrate 1 from the blowing hole 3a of the gas blowing device 3 into the beam shape 2a and blown almost vertically, the substrate 1 Since 1b is held in close contact with the support base 4, the temperature T1 of the back surface 1b of the substrate 1 is held constant at a predetermined temperature by the coolant 4a of the support base 4. Even if cooling is not used, a predetermined temperature can be obtained depending on a desired temperature even by cooling only by a heat dissipation effect. The hot gas beam 2a forms a certain stagnant layer 5 on the surface of the substrate 1 depending on the velocity thereof. The thickness S of the stagnant layer 5 depends on the incident velocity V of the high temperature gas beam 2 a and the incident angle incident on the surface 1 a of the substrate 1. As the incident speed V increases, the thickness S of the stagnant layer 5 decreases. The temperature of the substrate surface 1a is lower than the temperature T2 of the hot gas beam 2a. Since the heat transfer from the high temperature gas beam 2a can be controlled by the thickness S of the stagnant layer 5, the surface temperature of the substrate 1 can be controlled by the temperature T2 of the high temperature gas beam 2a and the velocity V incident on the substrate 1. Therefore, the high temperature gas beam 2a can preferentially heat the substrate front surface 1a or a film (not shown) on the substrate front surface and the back surface. When deviating from the collision region of the high-temperature gas beam 2a, the lateral velocity also decreases, the thickness S of the stagnant layer 5 increases (thickness is not expressed in FIG. 2), and the heat conduction decreases.

When there is one high-temperature gas beam 2a of a gas that does not react as shown in FIG. 2, even if a gas that causes a thermal decomposition reaction, for example, silane SiH _4, is present around the high-temperature gas beam 2a, Therefore, the efficiency of the growth reaction on the surface of the substrate 1 where the high temperature gas beam 2a collides with the surface of the substrate 1 and a high temperature is created is low (low). That is, decomposition reaction species are exhausted along the surface of the substrate along the flow of the high-temperature beam 2a of the non-reacting gas that collides with the surface of the substrate 1. Therefore, a structure for joining the pyrolysis gas into the high temperature gas beam 2a is necessary for film deposition.

  FIG. 1 is a schematic view showing the principle of the present invention relating to a film forming method for solving this problem. In the present invention, two high-temperature gases 2b and 2c are blown out from two locations at a predetermined interval, a high-temperature space is formed in a space sandwiched between the two high-temperature gases 2b and 2c, and a depositing gas is added to the header for merging. 9 are combined and mixed to form one gas beam. Then, this high-temperature gas beam is blown out as a new high-temperature gas from the blowout port 9a toward the substrate 1. If the blowing channel is narrowed, the blowing speed can be increased, so that the stagnant layer 5 (see FIG. 2) can be thinned to promote the heat transfer effect. On the contrary, if the blowing channel is widened, the stagnant layer 5 becomes thick, and the temperature of the substrate surface 1a can be relatively lowered depending on the channel width to diffuse the high-temperature decomposition active species.

  That is, as shown in FIG. 1, the film forming apparatus according to the present invention has a depositable film-forming pyrolysis gas in, for example, a high-temperature room 6 that is a high-temperature space surrounded by two high-temperature gases 2b and 2c. As an example, the silane gas 7 is supplied by being discharged from the blowout holes 8. Then, thermal decomposition of the silane gas 7 proceeds in the high temperature room 6 to generate active species. After this is narrowed down to one gas beam 10, it blows out from an aperture outlet 9a which is a blowout outlet. Then, the stagnant layer 5 shown in FIG. 2 thinned by the gas beam 10 is diffused to grow a silicon film on the surface 1 a of the substrate 1.

  If a gas that undergoes an oxidation-reduction reaction is selected as these two high-temperature gases 2b and 2c, those stagnated in the high-temperature room 6 cause a thermal decomposition reaction with each other. However, if there are no nuclei of different substances in the gas phase, natural nucleation does not occur below a certain concentration, but there is a substrate 1 as a huge nucleus, which is a different substance having a low temperature, below the aperture outlet 9a. For this reason, as shown in FIG. 2, heat transfer is performed across the stagnant layer 5, and the substrate surface 1a is lower than the temperatures T2 of the hot gases 2b and 2c, but the temperature T1 of the back surface 1b of the substrate 1 and the inside The temperature is higher than On the substrate surface 1a which is a different kind of material, film growth starts from the nucleus growth. This is the principle of generating thermal CVD on the substrate surface 1a by keeping the temperature of the substrate 1 low while bringing the high-temperature gases 2b, 2c higher than the temperature of the substrate 1 into contact with each other.

  Furthermore, in addition to selecting the chemical type of the high temperature gas 2b, 2c, by adjusting the spray speed, spray angle (incidence) angle, temperature, gas exhaust, etc. of the high temperature gas 2b, 2c accordingly. It is possible to grow a desired film. Since the thermal decomposition active species moves in the vicinity of the substrate surface 1a maintained at a high surface temperature, for example, when there are deep holes in the substrate surface 1a, the film also moves into the deep holes to form a film. Can do. Further, since the gas beam 10 collides with the substrate surface 1a and moves in the lateral direction at a high speed, a vortex or turbulent flow that circulates above and below the hole is created in the hole on the substrate surface 1a. Has the effect of leading to This effect improves the uniformity of the film thickness in the pores. In FIG. 1, reference numeral 4 b denotes a plurality of vacuum chuck grooves formed on the upper surface of the support 4 that supports the substrate 1, and the vacuum chuck grooves 4 b, 4 b,. Thus, the back surface 1b of the substrate 1 is adsorbed to the surface of the support base 4 and is fixed and supported in a close contact state. Further, the substrate 1 can be detached from the support 4 by filling the vacuum chuck grooves 4b, 4b,. The mechanism for supporting the substrate 1 in close contact with the support 4 forcibly prevents a portion of the substrate 1 from being instantaneously heated and thermally expanded to deform the substrate 1. For example, it is necessary to move the substrate 1 without deformation when the large substrate 1 is heat-treated with a smaller heating device. When a vacuum chuck for close contact with the substrate 1 is not required, only a fixing device (not shown) that fixes the substrate 1 without lateral displacement may be used. Although the movement of the substrate 1 has been described above, the movement may be relative to the beam, and the beam blowing device may be designed to move with respect to the substrate 1.

  The invention according to claim 1 is characterized in that a plurality of gases higher in temperature than the substrate are merged into one gas beam and sprayed substantially vertically onto the surface of the substrate supported in close contact with the support base. Forming method. It is.

  The term “substantially perpendicular to the spray angle at which the hot gas is blown against the substrate surface” in the claims 1 and below means that the main blowing direction of the hot gas is distributed within about ± 10 ° with respect to the vertical. Point to.

  Further, the temperature of the high-temperature gas differs depending on the substrate to which the high-temperature gas is sprayed. When the substrate is made of glass or plastic, the temperature is higher than the softening temperature or maintenance temperature (for example, 200 ° C. to 500 ° C.) of these substrates. In the case of a silicon substrate, the temperature is higher than the temperature at the time of forming the last film formed on the substrate.

  The invention according to claim 2 is the film forming method according to claim 1, wherein the support base is configured to be cooled.

According to a third aspect of the present invention, a plurality of high-temperature gases including a pyrolytic gas for forming a film having deposition properties are merged into one gas beam and sprayed substantially vertically onto the surface of a substrate supported on a support table. In the invention according to claim 4, the substrate is made of glass or plastics, and the high-temperature gas is at a temperature higher than the softening or phase change temperature or supporting temperature of the glass or plastics. The film forming method according to claim 1, wherein the film forming method is provided.

  The invention according to claim 5 is that the substrate is a silicon substrate on which a device is formed, and the high-temperature gas has a high temperature equal to or higher than a temperature at the time of film formation of the device. The film forming method according to claim 1.

  According to a sixth aspect of the present invention, there is provided a substrate, a movable support base for supporting the substrate in close contact, a plurality of gas passages for passing a plurality of required gases, and a heating device for heating the gas in these gas passages to a required high temperature. And a plurality of these high-temperature gases and a pyrolytic gas for forming a film having a deposition property discharged into a high-temperature space surrounded by the plurality of high-temperature gases to be combined into a single gas beam and focused on the surface of the substrate. A film forming apparatus comprising: a gas spraying device provided with a blowing hole for spraying substantially vertically.

  The invention according to claim 7 is characterized in that the required gas includes any one of nitrogen, hydrogen, argon, helium and oxygen, or a mixed gas of two or more thereof. A film forming apparatus.

  The invention according to claim 8 is the film forming apparatus according to claim 6 or 7, wherein the required gas includes a pyrolysis gas for forming a film containing silicon, carbon, or germanium.

In the invention according to claim 9, the required gas is nitridation containing silane (SiH ₄ , Si ₂ H ₆ ) or halogenated silane, an oxidizing gas containing N ₂ O, NO ₂ that reacts with these, or NH _3. 9. The film forming apparatus according to claim 6, comprising either or both of gases.

  The invention according to claim 10 is configured such that a plurality of the gas spraying devices are arranged side by side, and the support base is movable in the juxtaposition direction of these gas spraying devices. 2. The film forming apparatus according to item 1.

  The invention according to claim 11 is characterized in that the substrate is made of glass or plastics, and the high-temperature gas has a temperature higher than a softening temperature or a support temperature of the glass or plastics. The film forming apparatus according to claim 1.

  The invention according to claim 12 is characterized in that the heating device for heating the gas to a required high temperature is surrounded by a heat insulating material, and the film formation according to any one of claims 6 to 11 apparatus.

  According to a thirteenth aspect of the present invention, the substrate is a silicon substrate on which a device is formed, and the high-temperature gas has a high temperature equal to or higher than a temperature at the last film formation step of the device. The film forming apparatus according to any one of the above.

  According to the first aspect of the present invention, while maintaining the substrate placed on the movable support stand at a low temperature, the substrate surface is preferentially given priority over the inside and the back surface by blowing a high-temperature gas beam almost vertically onto the substrate surface. Therefore, it is possible to form a film by performing a heat treatment such as annealing the film on the surface of the substrate while maintaining the temperature of the substrate at a relatively low temperature.

  According to the third and sixth aspects of the present invention, the thermally decomposable gas for forming a film having a deposition property is merged with the plurality of high temperature gases and the high temperature space surrounded by the plurality of high temperature gases, and the thermally decomposable gas is in the high temperature space. Is thermally decomposed and sprayed onto the substrate surface, so that a film is formed on the substrate surface.

  And the stagnant layer of a thermal resistance layer is formed on the substrate surface, and heat conduction into the substrate can be suppressed. In addition, since the substrate can be cooled by the support table that supports the substrate, the substrate temperature can be kept constant, and inconvenience due to high temperatures such as softening of the substrate can be prevented or suppressed. In addition, since the support base can be moved, it enables heat treatment such as annealing and film deposition over the entire area of the substrate, and multiple types of film formation are performed by placing multiple types of gas beam spraying devices in the direction of substrate movement. Can be continuously performed on the substrate.

  Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. In the accompanying drawings, the same or corresponding parts are denoted by the same reference numerals.

  FIG. 3 is a block diagram showing the configuration of the film forming apparatus 11 according to the second embodiment of the present invention, and FIG. 4 is an enlarged view of a main part thereof.

  As shown in FIG. 3, the film forming apparatus 11 includes a substrate 12 for forming a desired film, a coolable and movable support base 13 that supports the substrate 12, and a gas spraying device 14. .

  The substrate 12 is made of a required large flat glass substrate, plastic substrate, or the like, and silicon oxide is formed on the surface 12a at a temperature higher than the softening or phase change temperature (for example, 300 ° C. to 500 ° C.) of the substrate 12. It is intended to form and grow a film of a high temperature thermal CVD material such as a film, the same nitride film, or polysilicon.

  The support base 13 is formed with a plurality of grooves 13b, 13b,... For vacuum chuck suction having an upper surface opened in the figure on the surface 13a that is in close contact with the back surface 12b of the substrate 12, and the inside of these grooves 13b, 13b,. Is exhausted by an exhaust device (not shown) to adsorb and fix the back surface 12b of the substrate 12. On the other hand, the substrate 12 can be detached from the support base 13 by filling the grooves 13b, 13b,. It is possible to adjust the cooling effect by heat conduction to obtain a desired temperature by designing the grooves 13b, 13b,. Further, the support base 13 incorporates a heat medium (cooling material or heating material) 13c that can be circulated therein as needed, so that the support base 13 can be appropriately controlled to a required temperature. In addition, the temperature of the back surface 12 b of the substrate 12 can be controlled by controlling the temperature of the support base 13. When necessary, the substrate support 13 can be moved in the plane vertical and horizontal (XY) directions of the substrate 12.

  On the other hand, in the gas spraying device 14, for example, a stainless cylindrical inner casing 16 is disposed in a stainless covered cylindrical outer casing 15, and the bottom surface of the outer casing 15 is opened. Further, in the inner casing 16, a gas heating device 17 indicated by a broken line frame in FIG. A heat insulating material (not shown) is arranged between the inner casing 16, the outer casing 15, and the gas heating device 17 to prevent heat radiation to the outside.

  The outer casing 15 has first, second and third gas introduction ports 15a1, 15a2, 15a3 and a power line introduction port 15a4 formed in the upper lid 15a, respectively, and these first, second and third gas introduction ports 15a1. , 15a2 and 15a3 are connected to the first, second and third gas introduction pipes 18a, 18b and 18c concentrically in an airtight manner, and a power line 19 is inserted into the power line introduction port 15a4. A third inner gas introduction pipe 20 made of, for example, quartz is communicated with the inner end of the third gas introduction port 15a3.

  Nitrogen gas, for example, is introduced into the first and second gas introduction pipes 18a, 18b, and silane (SiH4) diluted to 1-10% with, for example, nitrogen gas is deposited on the third inner gas introduction pipe 20. It is introduced as an example of a pyrolysis gas for forming a film having a property.

  The outer casing 15 is provided with a pair of left and right exhaust pipes 21, 22 on a pair of left and right side surfaces, and the inner opening ends 21 a, 22 a of the exhaust pipes 21, 22 are defined by the outer casing 15 and the inner casing 16. An opening is formed in the formed annular exhaust space 23, and exhaust such as nitrogen gas that has entered the exhaust space 23 from the bottom opening of the outer casing 15 is exhausted to the outside through the exhaust pipes 21 and 22.

  The heating device 17 is made of a heat-resistant material such as ceramics or carbon. In the present embodiment, a solid flat carbon center plate 24 made of carbon (including graphite, isotropic carbon, etc.) and carbon solids attached and fixed to both the left and right side surfaces respectively. The carbon central plate 24 has a pair of left and right carbon side plates 25 and 26 in the shape of a flat plate, and the carbon center plate 24 opens toward the outer surface at both left and right ends in FIG. A pair of left and right U-shaped grooves 27 and 28 extending in a vertical direction) are formed in a plurality of stages at a predetermined interval in the longitudinal direction of the carbon central plate 24 (vertical direction in FIG. 3). The outer ends of the pair of left and right grooves 27, 27 ..., 28, 28 ... are hermetically sealed by facing surfaces of the pair of left and right carbon side plates 25, 26 as shown in FIG.

  The carbon central plate 24 has a pair of left and right first and second upper gas introduction vertical holes 29 and 30 formed in the vertical direction in the figure at the upper part in FIGS. The inner ends (lower ends in the figure) of the second gas introduction vertical holes 29 and 30 are communicated with the upper and lower grooves 27a and 28a of the pair of left and right grooves 27 and 28, respectively.

  Further, the carbon center plate 24 communicates the first and second lower gas blowing vertical holes 31 and 32 with the grooves 27b and 28b at the lower ends in the column direction of the pair of left and right grooves 27 and 28, respectively. The first and second lower gas blowout vertical holes 31 and 32 are formed at the left and right side ends of the lower portion in the longitudinal direction of the carbon central plate 24, and the respective one side ends are formed by recesses that open outwardly. Is hermetically sealed by a pair of left and right carbon side plates 25,26.

  In addition, flat heat insulating quartz plates 33 and 34 are fitted in recesses in the outer opening of the lower outer surface of the pair of left and right carbon side plates 25 and 26 to insulate the heating device 17. In order to prevent the outer casing 15 from being overheated, the heat insulation of the heating device is additionally inserted depending on the temperature range to be used. For the purpose of raising the gas temperature to 600 ° C. or higher, a heat insulating material is inserted into the inner casing 16 so as to surround the heating device 17. Further, a heat insulating material is also inserted into the contact portion between the outer casing 15 and the heat generating device 17.

  The pair of left and right first and second lower gas blowout vertical holes 31 and 32 thus configured communicate with the first and second gas blowout holes 35 and 36 at the lower ends in FIGS. I am letting. These first and second gas blowout holes 35 and 36 are respectively formed on the left and right end portions of the lower end portion of the carbon center plate 24, and the first and second gas blowout holes 35 and 36 respectively provide the first and second gas blowout holes 35 and 36. Is sprayed as a high-temperature gas substantially vertically on the substrate surface 12a. Further, a third gas blowing hole 37 is formed in an intermediate portion between the pair of left and right first and second gas blowing holes 35 and 36. These first to third gas blowing holes 35 to 37 are illustrated as lines for convenience of illustration, but the plane (bottom) shape is a thin rectangular slit. The first to third blowout holes 35 to 37 may be single elongated slits, but a plurality of small rectangular slits, a plurality of small circular holes, or a plurality of rectangular holes are arranged at predetermined intervals. You may comprise by arrange | positioning in the shape. Further, the shape of the array may be linear, curved, or annular. The third gas blowout hole 37 is connected to the blowout end of the third inner gas introduction pipe 20 so that the third gas is blown out from the third gas blowout hole 37 to the substrate surface 13a. Yes. Although the third gas blowing hole (elongated slit) 37 is shown as one in FIG. 3, a plurality of third gas blowing holes (elongated slits) may be arranged. It is possible to freely design a quartz tube as an example of the third inner gas introduction tube 20 through which a plurality of different types of gases pass through the plurality of slits. It is possible to design freely so that the flow rate of the specific gas in the quartz introduction tube is reversed and the amount of gas introduced and blown out is made uniform in the longitudinal direction of the slit. It is also possible to freely design a gas blow hole by making one quartz tube U-turn on one side of the slit.

  And the opening upper end of the bottomed plate-like confluence header 60 is fixed to the outer surface of the bottom opening end (lower end in FIG. 3) 16a of the inner casing 16. The merging header 60 has substantially the same function as the merging header 9 shown in FIG. 1, and covers the first, second, and third gas blowing holes 35, 36, and 37 at a required interval. The high temperature gas blown out from the first to third gas blowing holes 35 to 37 is received and merged, and mixed into the merging header 60 from the first and second gas blowing holes 35 and 36. A space surrounded by the two hot gas beams blown out is formed in the hot gas room 6 (see FIG. 1). In the high temperature gas room 6, the gas from the third gas blowing holes 37 is blown out and merged and mixed. In addition, the merge header 60 has an aperture 60a that squeezes the mixed gas into a single gas beam g and blows it toward the substrate surface 12a.

  5A is a front view of one side surface (for example, the left side surface) of the carbon central plate 24, FIG. 5B is a sectional view taken along the line BB in FIG. 5A, and FIG. -C sectional view, (D) is a DD sectional view of the same (A), and these carbon center plate 24 and a pair of left and right carbon side plates 25, 26, a pair of left and right shown in FIG. ..., grooves 28, 27, ..., 28, 28, ... and first and second lower gas blowout vertical holes 31, 32 are formed, respectively. The left and right pair of grooves 27, 27,..., 28, 28,... Are formed so as to individually pass the first and second introduced gases in the vertical direction in FIGS. 27 and 28 are not connected in the left-right (lateral) direction.

  Reference numeral 38 in FIG. 5A denotes a plurality of vertical communication grooves that communicate with each of the pair of left and right grooves 27 and 28 in the vertical direction in the figure, and 39 denotes an insertion hole into which the heating lamp 40 is inserted. . The heating lamp 40 is, for example, a 200 V, 2.2 kW lamp, and is a clean heat source that is connected to the power line 19 and is supplied with required power to generate heat at a high temperature.

  In the figure, reference numeral 41 denotes a temperature sensor such as a thermocouple, which detects the temperatures of the first and second gases blown from the first and second gas blowing holes 35 and 36 to the surface 12a of the substrate 12, The temperature detection signal is supplied to a temperature control device (not shown).

  The temperature control device receives this temperature detection signal and controls the power supplied from the power line 19 to the heating lamp 40, thereby setting the temperature of the first and second gases to a predetermined temperature (for example, 650 ° C.). It can be controlled.

  Next, the operation of the film forming apparatus 11 configured as described above will be described with reference to FIG.

  First, energization of required power supplied from the power line 19 to the heating lamp 40 of the heating device 17 is started by a temperature control device (not shown).

  For this purpose, the carbon central plate 24 and the pair of left and right carbon side plates 25, 26 are heated to a high temperature by the heat generated by the heating lamp 40, and the first and second upper gas introduction vertical lines formed by these 24, 25, 26 are used. The holes 29, 30 and the pair of left and right grooves 27, 27 ..., 28, 28 ..., the first and second lower gas blowing vertical holes 31, 32, that is, the pair of left and right first and second gas passages. Heated.

  At this time, nitrogen gas is introduced from the first and second gas introduction pipes 18 a and 18 b into the pair of left and right first and second upper gas introduction vertical holes 29 and 30 of the heating device 17. The nitrogen gas further passes through a pair of left and right grooves 27, 27,..., 28, 28, and first and second lower gas blowing vertical holes to reach the first and second blowing holes 35 and 36. Until the required high temperature (for example, 650 ° C.). Thereafter, these hot gases are blown out from the first and second blowing holes 35 and 36 into the merging header 60. As a result, the high-temperature gas room 6 is formed in the space 60 surrounded by the high-temperature gas blown from the first and second blow-out holes 35 and 36 in the merging header 60. The outlet temperature of the nitrogen gas is detected by the temperature sensor 41, and the electric power to the heating lamp 40 is controlled by the control device, and feedback control is performed to a required temperature.

  On the other hand, at this time, silane gas, which is an example of a pyrolytic gas for forming a film having deposition properties, is introduced from the third gas introduction pipe 18c. This silane gas is diluted to 1 to 10% with, for example, nitrogen gas, and is insulated by the third inner gas introduction pipe 20 made of quartz, that is, is insulated so as not to be directly heated by contacting the heating device 17. Is introduced into the third blow-out hole 37, discharged from the third blow-out hole 37 to the high-temperature gas room 6 in the merge header 60, and merged with two high-temperature gases (for example, nitrogen gas) from the aperture outlet 60a. One gas beam is narrowed down and sprayed toward the substrate surface 12a.

  Thereby, the silane gas, which is the third gas, is heated to a high temperature by being merged with the high temperature gas in the high temperature gas room 6 and thermally decomposed, and the generated decomposition active species is diffused to the substrate surface 12a. Be sprayed.

  Thus, the decomposition active species of the silane gas sprayed on the substrate surface 12a are deposited as a silicon film on the substrate surface 12a. On the other hand, a gas containing a component that does not contribute to reflection or film formation on the substrate surface 12a is led from the opening between the bottom surface of the outer case 15 and the substrate 12 to the reduced pressure exhaust space 23 inside and exhausted from the exhaust space 23. Exhaust by pipes 21 and 22.

Thus, a silicon film was formed on the glass substrate surface 12a. This silicon film was grown to a thickness of about 200 nm, for example. When the Raman scattering spectrum was examined in order to evaluate the crystallinity of the deposited silicon film, it was confirmed that it was polysilicon from the peak shift component in the vicinity of 515 cm ⁻¹ of the spectrum. The peaks of (111), (220), and (311) were observed on the rocking curve of X-ray diffraction. Further, when a cross-sectional TEM was observed, a lattice image indicating polysilicon was observed. Therefore, the deposited film was polysilicon.

Next, instead of the glass substrate, a 10 Ωcm silicon wafer substrate was placed in close contact with the 300 ° C. support 13 as the substrate 12. Silane is introduced from the third gas introduction port 18c and nitrogen gas containing an oxidizing gas N ₂ O gas is introduced from the first and second gas introduction ports 18a and 18b, and the detection temperature of the temperature sensor 41 is set to 700 ° C. As a result, a film grew on the surface 12a of the silicon wafer substrate. When the sheet resistance measurement was attempted, this film was an insulating film. From the infrared transmission spectrum using an infrared spectrophotometer using the same lot wafer on which this film is not deposited as a reference wafer, a Si-O peak is observed, and this film is an oxide of silicon. It could be confirmed. This film was dissolved in hydrofluoric acid.

  Further, when a device is already formed on the silicon wafer substrate, the first and second high-temperature gases (nitrogen gas) are used during the plasma nitride film and silicon oxide film forming process used in manufacturing the device. A thermal CVD film can be formed on this silicon wafer substrate by heating to a temperature higher than or equal to (400 ° C.).

Then, as described above, the silane diluted with nitrogen is introduced as the third gas, and at the same time, the gas introduced into the first and second gas inlets 18a and 18b is replaced with nitrogen gas containing ammonia NH _3. Was set to 700 ° C., the film grown on the substrate surface 12a was an insulating film. Moreover, from the infrared transmission spectrum using the infrared spectrophotometer of this film | membrane, the vibration peak of Si-N was observed and it has confirmed that the film | membrane was a nitride of silicon.

In the above embodiment, monosilane SiH ₄ is used to deposit a silicon film on the substrate surface 12a. However, in order to lower the temperature, this monosilane is replaced with a higher order silane, for example, disilane Si ₂ H ₆ . Alternatively, it is possible to freely design a gas such as SiF ₄ in order to make the temperature lower by utilizing the reactivity. Furthermore, in addition to the gas containing silicon, a gas containing carbon can be introduced. For example, as a gas containing carbon, acetylene C ₂ H ₂ can be used because it is easily pyrolyzed. When this is used simultaneously with silane, a film containing silicon carbide is formed. Further, if GeH ₄ and SiH ₄ containing germanium are simultaneously introduced, a mixed crystal of silicon and germanium can be grown. Further, it is possible to freely grow polysilicon doped with impurities by introducing doping gas PH ₃ or B ₂ H ₆ simultaneously with silane gas. Further, cleaning gas such as ClF ₃ or NF ₃ that reacts with silicon is introduced from the first to third inlets 18a to 18c of the heating gas for cleaning the components of the film forming apparatus 11 on which the film is deposited. The attached film can be removed without replacing the parts. By introducing the cleaning gas, it is possible to freely design the process for the controlled and stable operation of the apparatus.

  In addition, it has been shown that various films of different materials can be formed and grown by selecting a gas. However, a stacked film can be formed and a stacked structure can be selected and designed by moving the substrate 12.

  FIG. 6 is a schematic diagram showing the configuration of a film forming apparatus 11A according to the third embodiment of the present invention. In the film forming apparatus 11A, in the film forming apparatus 11 shown in FIG. 3 described above, a plurality of gas spraying apparatuses 14 are arranged and fixed, for example, in a line at a predetermined pitch, while the support base 13 Is characterized in that a support moving device 50 is provided which supports the gas spraying devices 14, 14, 14 in parallel with each other so as to pass or reciprocate. The other configuration is almost the same as the configuration of the film forming apparatus 11 shown in FIG.

  That is, in this film forming apparatus 11A, a lift 52 is arranged on a base 51 so as to be adjustable in the vertical direction by a plurality of screws 53, 53,. This adjustment can be mechanically designed to be driven by a motor. A pair of bearings 55 and 55 that rotatably support both ends in the axial direction of the moving screw 54 and a motor 56 that rotates the moving screw 54 around its axis are disposed on the lifting platform 52. .

  On the other hand, a pair of left and right support legs 13c, 13d are projected on the lower surface of the support base 13 in FIG. 6, and screw holes that engage with the moving screws 54 are formed in these support legs 13c, 13d. As the moving screw 54 rotates, the support base 13 moves to the left and right. A slide mechanism (not shown) that restricts the rotation so that the support base 13 does not rotate is provided. There may be one support leg 13 that meshes with the moving screw.

  Therefore, the support pedestal 13 is moved by the support pedestal moving device 50 in the direction in which the plurality of gas blasting devices 14, 14, 14 are sequentially arranged or reciprocated as appropriate, so that these gas blasting devices 14, 14, The processing temperature of the film formed on the substrate surface 12a every time it passes 14 can be changed, or the thickness of the film to be formed can be increased. Alternatively, a plurality of types of films are formed on the substrate surface 12a by appropriately changing the high-temperature gas introduced into each gas spraying device 14, the temperature thereof, the type of gas for film formation and the combination thereof, or a plurality of films are formed. Lamination or heat treatment such as annealing can be performed. In addition, although the example which moves the board | substrate 12 side was shown here, the movement should just be a relative and you may move the spraying apparatus 14, 14, ... side. Further, the relative movement direction may be two directions of XY.

  7A, 7B, and 7C are schematic plan views showing arrangement rows of a plurality of gas spraying devices 14, 14, and 14 in the film forming apparatus 11A shown in FIG. FIG. 7A is characterized in that a plurality of gas sprayers 14, 14, and 14 are arranged in a line at a predetermined interval in the moving direction of the substrate 12 indicated by an arrow in the drawing of the substrate 12. Other than this, the configuration is the same as the film forming apparatus 11A shown in FIG.

  In addition, in these gas sprayers 14, 14, and 14, the length in the width direction (the length in the vertical direction in FIG. 7A) of the facing surface facing the substrate surface 12a is the length in the short direction of the substrate 12 ( This is suitable when the length is longer than the length in the vertical direction in FIG.

  FIG. 7B is characterized in that a plurality of gas spraying devices 14, 14, and 14 are disposed in the longitudinal direction of the substrate 12, that is, in an oblique direction with respect to the moving direction indicated by the arrow in the drawing.

  According to this oblique arrangement, when the length in the width direction of each gas spraying device 14 (the length in the vertical direction in FIG. 7B) is shorter than the length in the vertical direction of the substrate 12 in the figure, these are the spraying devices 14. , 14, and 14, a film can be formed over almost the entire length of the substrate 12 in the short direction.

  Further, if the high temperature portion is formed in a straight line on the large glass substrate 12, the substrate 12 may be warped. Therefore, it is desirable to divide the arrangement of the gas spraying device 14. Furthermore, when cutting out from the large substrate 12 on which the film is formed into a plurality of panel substrates (not shown), a small gas spray for one panel substrate is made by placing a division of the arrangement of the plurality of gas spray devices 14 at the boundary. The apparatus 14 can be designed as an apparatus capable of forming a film over almost the entire area of the substrate surface 12a.

  FIG. 7C shows a case where the length of the gas spraying device 14 (vertical length in the drawing) is shorter than the length of the substrate 12 in the vertical direction (short direction) in the drawing. , 14, 14, and 14 are arranged in a staggered manner in a plurality of rows (for example, two rows) in the vertical direction of the substrate 12 in the drawing. According to this staggered arrangement, the width dimension W from the leftmost gas spraying device 14 to the rightmost gas spraying device 14 in the figure can be shortened. For this reason, when these gas spraying devices 14, 14, 14, and 14 are accommodated by one outer casing (not shown), the width dimension W of the outer casing can be shortened and the size can be reduced. Further, when these gas spraying devices 14, 14, 14, 14 are accommodated in an outer casing (not shown), the gas blown from these gas spraying devices 14, 14, 14, 14 is reflected by the substrate surface 12a, etc. The gas diffused outward may be taken into the outer casing and exhausted to the exhaust source. The example in which the entire region of the substrate 12 is processed by moving the substrate 12 in one direction has been described above. However, if the movement is perpendicular to the longitudinal direction of the substrate 12, and in this figure, the movement is combined with the movement of the substrate 12 in the short direction, for example, it can be moved in the XY direction, the number of gas spraying devices 14, 14, All areas can be processed with…. By this movement, the uniformity of processing is improved, and at the same time, the uniformity of the surface temperature of the substrate 12 is improved, and the deformation due to the difference in thermal expansion of the substrate 12 can be suppressed.

  FIG. 8 is a schematic diagram showing a schematic configuration of a film forming apparatus 11B according to the fifth embodiment of the present invention. As shown in FIG. 8, the film forming apparatus 11B is characterized in that it is mainly configured to heat-treat a film such as an amorphous silicon film formed in advance on the substrate surface 12a, such as an annealing process. . For this purpose, the film forming apparatus 11B is the same as the film forming apparatus 11 according to the first embodiment shown in FIG. 3 and the like, and includes a third gas introduction pipe 18c for introducing a pyrolytic gas for film formation having a deposition property. The main feature is that the third inner gas introduction pipe 20 communicating with this is omitted, and that the two heating devices 17 are arranged side by side to form a pair of left and right heating devices 17a and 17b. Have

  Accordingly, the pair of left and right heating devices 17a and 17b includes the carbon center plates 24 and 24, respectively, in substantially the same manner as the heating device 17 shown in FIG. One carbon side plate 26B attached to the outer ends of the two carbon center plates 24, 24 is interposed between the two carbon side plates 26, 26. This is different from the first embodiment in that both are used.

  For this purpose, the pair of left and right heating devices 17a and 17b includes a total of four gas introduction pipes including two first gas introduction pipes 15a1 and 15a1 and two second gas introduction pipes 15a2 and 15a2. Four gas passages communicating with the gas introduction pipes 15a1, 15a1, 15a2, 15a2 are formed.

  Next, the heating action of the film forming apparatus 11B configured as described above will be described.

  First, energization of required power supplied to the heating lamp 40 is started by a temperature control device (not shown). For this purpose, the left and right carbon central plates 24, 24 and the pair of left and right carbon side plates 25, 25, 26B are heated to a high temperature (for example, 700 to 800 ° C.) by the heat generated by the heating lamp 40, and these 24, 25, 26B. The first and second upper gas introduction vertical holes 29, 29, 30, 30 and the pair of left and right grooves 27, 27,. The vertical holes 31, 31, 32, 32, that is, the four first and second gas passages in each pair of left and right are heated.

  At this time, nitrogen gas flows from each of the first and second four gas introduction pipes 18a, 18a, 18b, 18b to each pair of left and right first and second upper gas introduction vertical holes 29 of each heating device 17a, 17b. , 29, 30, 30. This nitrogen gas further passes through each of a pair of left and right grooves 27, 27,..., 28, 28, and first and second lower gas blowout longitudinal holes 31, 31, 32, 32, respectively. The second blow holes 35, 35, 36, and 36 are each heated to a required high temperature, and are further squeezed into a beam from the first and second blow holes 35, 35, 36, and 36, respectively. The hot gas beam 60b is sprayed almost vertically on the surface 12a of the substrate 12, respectively. By this high temperature gas beam 60b, a film such as amorphous silicon formed in advance on the glass substrate surface 12a can be heated to a high temperature and annealed.

It has been found that amorphous silicon grown by plasma CVD can be annealed to drive out hydrogen in the amorphous silicon and convert it into polysilicon with less hydrogen. A Raman scattering spectrum was examined on an amorphous silicon film on a glass with a thickness of 100 nm which was annealed for 4 minutes at a total flow rate of nitrogen of 50 SLM with the temperature of the high-temperature gas beam 60b set to 750 ° C. From the peak shift component near 515 cm ^−1. It was confirmed that it could be converted to polysilicon. A peak was observed on the lower frequency side than 515 cm ⁻¹ by adjusting the temperature and irradiation time. The amorphous silicon before irradiation showed a broad weak peak in the vicinity of 480 cm ⁻¹ . That is, it was confirmed that a film having a peak in the Raman shift spectrum can be fixedly formed on the annealed substrate surface 12a by heating the amorphous film placed on the substrate surface 12a by the film forming apparatus 11 or 11A.

  The two film forming apparatuses 11B are provided with two heating devices 17a and 17b. For example, four high-temperature gases are squeezed into one beam and sprayed onto the substrate surface 12a. Can be increased. Therefore, when the substrate 12 is moved by the support base 13 as shown in FIGS. 6 and 7, the heat treatment time of the substrate 12 can be shortened by the amount of heat of the high temperature gas beam 60b. As a result, since the substrate 12 can be moved at a high speed, a high throughput can be obtained. That is, even if the substrate 12 is moved at a high speed, a gas beam having a required amount of heat can be blown per unit time and unit area, so that throughput can be improved.

  Since the aperture diameter of the aperture 60a is made wider than that of the two high-temperature gas beams 60b in order to confine the four high-temperature gases into one beam, the blowing thickness of the high-temperature gas beam 60b is thicker than that of the two high-temperature gases. Become. For this reason, the distance from the exit of the spread of the high temperature gas beam 60b on the basis of the opening diameter of the aperture 60a can be relatively increased. Further, since the spread of the high temperature gas beam 60b and the temperature of the high temperature gas beam 60b correspond to each other, the position where the gas beam having the same temperature can be obtained is farther than when the two high temperature gases are narrowed down to one beam. For this reason, since the minute interval between the substrate 12 and the aperture 6a can be increased, a margin can be given to the accuracy of the mechanism design for holding and moving the substrate 12. This margin is a great advantage when designing and manufacturing the film forming apparatus 11B.

  In each of the above embodiments, the case where nitrogen gas is used as the high-temperature gas for heating has been described. However, the present invention is not limited to this, and the high-temperature gas for heating may be an inert gas. Further, a plurality of types of inert gases may be combined as appropriate, and the gas temperature can be selected as appropriate. Further, in the film forming apparatus 11B, the case where four high temperature gases are merged to be narrowed down to one high temperature gas beam 60b has been described. However, the number of the high temperature gas beams 60b may be three, five or more, and two or more. I just need it.

  Further, in the film forming apparatus 11B, the case where the heat treatment for heating and annealing the film of amorphous silicon or the like already formed on the substrate surface 12a has been described, but the present invention is not limited to this. For example, a film such as a silicon thin film may be formed on the substrate surface 12a as in the film forming apparatus 11 shown in FIG.

  According to the film forming apparatus 11, a polysilicon thin film, an insulating film, or the like can be formed and formed on the glass substrate surface 12a at low cost, so that a device such as a thin film transistor can be directly formed on the surface 12a of the glass substrate. Can be manufactured. Moreover, by continuously growing films having different compositions on the substrate surface 12a and growing a thin film having a gradient composition, a gradient composition thin film that can effectively use the spectrum of sunlight or a solar cell device using a heterogeneous junction can be obtained. It is also possible to manufacture at a low cost. In each of the above embodiments, the case where the carbon central plate 24 and the carbon side plates 25, 26, and 26A are formed of carbon has been described. However, the carbon central plate 24 and the carbon side plates 25, 26, and 26A may be replaced with non-oxidized ceramics or coated with them. According to this, it is possible to introduce oxygen.

  As described above, the present invention is based on the temperature of the softening or phase change point or the temperature of the support base 13 while maintaining the substrate 12 made of glass or the like by the support base 13 having a temperature lower than the softening or phase change point. A high temperature gas at a higher temperature is blown almost vertically onto the substrate surface 12a and collided with the high temperature gas, thereby causing the entire substrate 12 to have a low temperature below the softening point or the temperature of the support base 13 supporting the substrate 12. The film on the substrate surface 12a can be annealed while maintaining the above.

  Further, the high-temperature gas and the pyrolytic gas for film formation having a deposition property are merged into one to promote the thermal decomposition, and this decomposed species is sprayed almost perpendicularly on the substrate 12, so that the substrate 12 can be efficiently injected. A film can be formed and grown.

  Furthermore, polysilicon can be grown on the substrate surface 12a, and a high-temperature thermal CVD film used in a semiconductor can be stacked and grown. Furthermore, since it is possible to generate a film or a laminated film structure in which the composition is changed in a gradient, for example, a device such as a thin film transistor, an organic EL (electroluminescence), or a solar cell is formed on the large glass substrate 12. Can be made inexpensively.

The schematic diagram which shows the principle of the film | membrane formation method which concerns on the 1st Embodiment of this invention. The schematic diagram which shows the state when a beam-like hot gas is sprayed on the substrate surface, and collides, and the temperature distribution at that time. The block diagram of the film forming apparatus which concerns on the 2nd Embodiment of this invention. FIG. 4 is a side sectional view showing a carbon center plate and a pair of left and right carbon side plates shown in FIG. 3. (A) is a front view of one side surface of the carbon center plate shown in FIG. 3, (B) is a sectional view taken along line BB of (A), (C) is a sectional view taken along line CC of (A), (D) is the DD sectional view taken on the line of (A). The schematic diagram which shows the structure of the film forming apparatus which concerns on the 3rd Embodiment of this invention. The modification of the film forming apparatus which concerns on the 4th Embodiment of this invention is each shown, (A) is a plane schematic diagram of the example of arrangement | positioning which arranges the several gas spraying apparatus shown in FIG. B) is a schematic diagram showing an arrangement example in which a plurality of gas spraying devices smaller than the substrate are covered over almost the entire surface of the substrate, and (C) is a modified example in which the plurality of gas spraying devices are arranged in a staggered manner. FIG. The schematic diagram of the principal part of the film forming apparatus which concerns on the 5th Embodiment of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Substrate 1a Substrate surface 1b Substrate back surface 2a High-temperature gas beam 2b High-temperature gas 2c High-temperature gas 3 Gas spraying device 3a Blowing hole 4 Support base 4a Heat medium 4b Vacuum chuck groove 5 Stagnating layer 6 High-temperature gas room 7 Depositing gas (silane gas)
9 Junction header 9a Aperture of the merge header
DESCRIPTION OF SYMBOLS 10 High temperature gas beam 11, 11A, 11B Film forming apparatus 12 Substrate 12a Substrate surface 12b Substrate back surface 13 Support stand 13a Support stand surface 13b A plurality of grooves 13c for vacuum chuck adsorption Heat medium 14 Gas spraying device 15 Outer casing 16 Inner casing 17, 17a, 17b Heating device 18a First gas inlet 18b Second gas inlet 18c Third gas inlet 19 Power line 20 Third inner gas inlet pipes 21, 22 Pair of exhaust pipes 23 Exhaust space 24 Carbon center plates 25, 26 A pair of left and right carbon side plates 27, 28 A pair of left and right grooves 27a, 28a A pair of left and right upper grooves 29 First upper gas introduction vertical hole 30 Second upper gas introduction vertical hole 31 First lower gas outlet vertical hole 32 Second Lower gas outlet vertical hole 35 First gas outlet hole 36 Second gas outlet hole 37 Third gas outlet hole 39 Heating lamp insertion hole 4 Heating lamp 41 temperature sensor 42 temperature region 50 moving device 51 base plate 52 elevating table 53 screw 54 moves the screw 55 bearing 56 motor 60 for confluence header 60a confluence header aperture (outlet)

Claims (13)

A method of forming a film, characterized in that a plurality of gases having a temperature higher than that of a substrate are merged into one gas beam and sprayed substantially vertically onto a surface of a substrate supported in close contact with a support base. The film forming method according to claim 1, wherein the support base is configured to be cooled. A method of forming a film, characterized in that a plurality of high-temperature gases including a pyrolytic gas for forming a film having deposition properties are merged into one gas beam and sprayed substantially vertically onto the surface of a substrate supported on a support table. . 4. The substrate according to claim 1, wherein the substrate is made of glass or plastics, and the high-temperature gas has a temperature higher than a softening or phase change temperature or a supporting temperature of the glass or plastics. The film formation method of description. 5. The film forming method according to claim 1, wherein the substrate is a silicon substrate on which a device is formed, and the high-temperature gas has a high temperature that is equal to or higher than a temperature during a film forming process of the device. . A movable support base for closely supporting the substrate and the substrate;
A plurality of gas passages for passing a plurality of required gases, a heating device for heating the gas in these gas passages to a required high temperature, and a deposition property discharged into a high-temperature space surrounded by the plurality of high-temperature gases and the plurality of high-temperature gases A gas spraying device provided with a blowout hole for converging a pyrolytic gas for film formation having a gas and constricting it into one gas beam and spraying it almost perpendicularly to the surface of the substrate;
A film forming apparatus comprising: The film forming apparatus according to claim 6, wherein the required gas includes any one of nitrogen, hydrogen, argon, helium, and oxygen, or a mixed gas of two or more thereof. 8. The film forming apparatus according to claim 6, wherein the required gas includes a pyrolysis gas for forming a film containing silicon, carbon, or germanium. The required gas is either silane (SiH ₄ , Si ₂ H ₆ ) or halogenated silane, an oxidizing gas containing N ₂ O, NO ₂ that reacts with these, or a nitriding gas containing NH ₃ , or both. The film forming apparatus according to claim 6, further comprising: The film forming apparatus according to any one of claims 6 to 9, wherein a plurality of the gas spraying devices are arranged side by side, and the support base is movable in a direction in which the gas spraying devices are arranged side by side. The film formation according to any one of claims 6 to 10, wherein the substrate is made of glass or plastics, and the high-temperature gas has a temperature higher than a softening temperature or a support temperature of the glass or plastics. apparatus. The film forming apparatus according to any one of claims 6 to 11, wherein a heating device for heating the gas to a required high temperature is surrounded by a heat insulating material. 13. The film according to claim 6, wherein the substrate is a silicon substrate on which a device is formed, and the high-temperature gas has a high temperature equal to or higher than a temperature at a last film formation step of the device. Forming equipment.

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