JP2010135629A5 - Substrate processing apparatus and semiconductor manufacturing method - Google Patents

Substrate processing apparatus and semiconductor manufacturing method Download PDF

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Publication number
JP2010135629A5
JP2010135629A5 JP2008311206A JP2008311206A JP2010135629A5 JP 2010135629 A5 JP2010135629 A5 JP 2010135629A5 JP 2008311206 A JP2008311206 A JP 2008311206A JP 2008311206 A JP2008311206 A JP 2008311206A JP 2010135629 A5 JP2010135629 A5 JP 2010135629A5
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substrate
processing apparatus
reaction chamber
substrate processing
substrates
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JP2008311206A
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JP2010135629A (en
JP5542327B2 (en
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複数の基板を同一空間内で熱処理する複数の反応室を有し、前記反応室は、複数の基板を個別に載置可能な複数の基板載置部と、前記複数の基板載置部間を仕切る仕切り部材と、を具備する基板処理装置。 The reaction chamber has a plurality of reaction chambers for heat-treating a plurality of substrates in the same space, and the reaction chamber is provided between a plurality of substrate placement portions on which a plurality of substrates can be individually placed and the plurality of substrate placement portions A substrate processing apparatus comprising: a partitioning member for partitioning. 前記仕切り部材は、高さが前記複数の基板載置部の高さ以上である請求項１記載の基板処理装置。 The substrate processing apparatus according to claim 1, wherein a height of the partition member is equal to or more than a height of the plurality of substrate mounting portions. 複数の基板を同一空間内で熱処理する複数の反応室を有し、前記反応室は、複数の基板を個別に載置可能な複数の基板載置部と、前記複数の基板載置部間を仕切る仕切り部材と、The reaction chamber has a plurality of reaction chambers for heat-treating a plurality of substrates in the same space, and the reaction chamber is provided between a plurality of substrate placement portions on which a plurality of substrates can be individually placed and the plurality of substrate placement portions A partition member to partition,
を具備する基板処理装置を用いた半導体装置の製造方法であって、搬送室から前記反応室に基板を搬送し、前記基板載置部に載置する工程と、前記基板を処理する工程と、前記反応室から前期搬送室へ基板を移動する工程とを有する半導体製造方法。A method of manufacturing a semiconductor device using a substrate processing apparatus comprising: a step of transporting a substrate from a transfer chamber to the reaction chamber and placing the substrate on the substrate mounting portion; a step of processing the substrate; Moving the substrate from the reaction chamber to the transfer chamber.
JP2008311206A 2008-12-05 2008-12-05 Substrate processing apparatus and semiconductor manufacturing method Active JP5542327B2 (en)

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JP2010135629A JP2010135629A (en) 2010-06-17
JP2010135629A5 true JP2010135629A5 (en) 2012-01-19
JP5542327B2 JP5542327B2 (en) 2014-07-09

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06260450A (en) * 1993-03-04 1994-09-16 Hitachi Ltd Dry-etching device
JP2701775B2 (en) * 1995-03-17 1998-01-21 日本電気株式会社 Plasma processing equipment
CN100358097C (en) * 2005-08-05 2007-12-26 中微半导体设备(上海)有限公司 Semiconductor technology processing system and method

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