JP2010129135A5 - - Google Patents

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Publication number
JP2010129135A5
JP2010129135A5 JP2008304127A JP2008304127A JP2010129135A5 JP 2010129135 A5 JP2010129135 A5 JP 2010129135A5 JP 2008304127 A JP2008304127 A JP 2008304127A JP 2008304127 A JP2008304127 A JP 2008304127A JP 2010129135 A5 JP2010129135 A5 JP 2010129135A5
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JP
Japan
Prior art keywords
charging time
external power
charge pump
voltage value
power source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2008304127A
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Japanese (ja)
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JP2010129135A (en
Filing date
Publication date
Application filed filed Critical
Priority to JP2008304127A priority Critical patent/JP2010129135A/en
Priority claimed from JP2008304127A external-priority patent/JP2010129135A/en
Publication of JP2010129135A publication Critical patent/JP2010129135A/en
Publication of JP2010129135A5 publication Critical patent/JP2010129135A5/ja
Pending legal-status Critical Current

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Claims (2)

チャージポンプによりメモリセルに電圧を供給する半導体装置であって、
外部電源の電圧値を判定する判定手段と、
前記判定手段によって判定された外部電源の電圧値がしきい値以下の場合に、前記チャージポンプによる充電時間を変更してメモリセルに対するオペレーションを制御する制御手段とを含む、半導体装置。
A semiconductor device for supplying a voltage to a memory cell by a charge pump,
Determination means for determining the voltage value of the external power supply;
And a control unit that controls an operation on the memory cell by changing a charging time by the charge pump when a voltage value of the external power source determined by the determination unit is equal to or less than a threshold value.
前記制御手段は、前記判定手段によって判定された外部電源の電圧値が第1のしきい値よりも大きい場合に、第1の充電時間を用いて前記チャージポンプに充電を行なわせ、
前記判定手段によって判定された外部電源の電圧値が第1のしきい値以下であり、かつ第2のしきい値よりも大きい場合に、前記第1の充電時間よりも長い第2の充電時間を用いて前記チャージポンプに充電を行なわせ、
前記判定手段によって判定された外部電源の電圧値が第2のしきい値以下の場合に、前記第2の充電時間よりも長い第3の充電時間を用いて前記チャージポンプに充電を行なわせる、請求項1記載の半導体装置。
The control unit causes the charge pump to charge using a first charging time when the voltage value of the external power source determined by the determination unit is greater than a first threshold value.
A second charging time longer than the first charging time when the voltage value of the external power source determined by the determining means is less than or equal to the first threshold and greater than the second threshold. To charge the charge pump using
When the voltage value of the external power source determined by the determination unit is equal to or lower than a second threshold value, the charge pump is charged using a third charging time longer than the second charging time; The semiconductor device according to claim 1.
JP2008304127A 2008-11-28 2008-11-28 Semiconductor device Pending JP2010129135A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008304127A JP2010129135A (en) 2008-11-28 2008-11-28 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008304127A JP2010129135A (en) 2008-11-28 2008-11-28 Semiconductor device

Publications (2)

Publication Number Publication Date
JP2010129135A JP2010129135A (en) 2010-06-10
JP2010129135A5 true JP2010129135A5 (en) 2011-12-01

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ID=42329415

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008304127A Pending JP2010129135A (en) 2008-11-28 2008-11-28 Semiconductor device

Country Status (1)

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JP (1) JP2010129135A (en)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62177787A (en) * 1986-01-30 1987-08-04 Seiko Epson Corp Semiconductor memory device
JP2923985B2 (en) * 1989-07-26 1999-07-26 日本電気株式会社 EEPROM device
JPH08203281A (en) * 1995-01-30 1996-08-09 Nec Corp Semiconductor device
JP5102413B2 (en) * 2000-07-12 2012-12-19 ユナイテッド・マイクロエレクトロニクス・コーポレイション Apparatus for generating a second power supply voltage from a first power supply voltage, a reference voltage generator, and a method and apparatus for generating a desired voltage
JP3931615B2 (en) * 2001-10-17 2007-06-20 株式会社デンソー Boosted voltage generating circuit, boosted voltage generating method of semiconductor memory device, and semiconductor memory device
KR100680503B1 (en) * 2004-11-08 2007-02-08 주식회사 하이닉스반도체 Circuit for generating an internal voltage in semiconductor memory device
JP2006216147A (en) * 2005-02-03 2006-08-17 Seiko Instruments Inc Non-volatile memory circuit

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