JP2010128421A5 - - Google Patents

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JP2010128421A5
JP2010128421A5 JP2008306047A JP2008306047A JP2010128421A5 JP 2010128421 A5 JP2010128421 A5 JP 2010128421A5 JP 2008306047 A JP2008306047 A JP 2008306047A JP 2008306047 A JP2008306047 A JP 2008306047A JP 2010128421 A5 JP2010128421 A5 JP 2010128421A5
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Prior art keywords
electro
optical device
relay
pixel electrode
thin film
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JP2008306047A
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JP5233618B2 (en
JP2010128421A (en
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Priority claimed from JP2008306047A external-priority patent/JP5233618B2/en
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Publication of JP2010128421A5 publication Critical patent/JP2010128421A5/ja
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Description

本発明の電気光学装置は上記課題を解決するために、複数の画素電極と、前記複数の画素電極毎に設けられた薄膜トランジスタと、前記画素電極と前記薄膜トランジスタとの間の層に配置されており、平面的に見て前記画素電極に重なる第1導電部と、前記画素電極前記薄膜トランジスタのドレイン領域との間を電気的に接続する第2導電部とを備え、前記第1導電部は、開口領域又は切り欠き領域を有し、前記第2導電部は、前記開口領域又は前記切り欠き領域に配置されることを特徴とする。
For the electro-optical device of the present invention to solve the above problems, it is placed in a layer between the plurality of pixel electrodes, a thin film transistor provided for each of the plurality of pixel electrodes, and the thin film transistor and the pixel electrode Ri, a first conductive portion overlapping the pixel electrode when viewed in a flat plane, the a second conductive portion you electrical connection between the pixel electrode and the drain region of the thin film transistor, the first conductive The portion has an opening region or a notch region, and the second conductive portion is disposed in the opening region or the notch region .

Claims (8)

複数の画素電極と、
前記複数の画素電極毎に設けられた薄膜トランジスタと、
前記画素電極と前記薄膜トランジスタとの間の層に配置されており、平面的に見て前記画素電極に重なる第1導電部と、
前記画素電極前記薄膜トランジスタのドレイン領域との間を電気的に接続する第2導電部とを備え、
前記第1導電部は、開口領域又は切り欠き領域を有し、前記第2導電部は、前記開口領域又は前記切り欠き領域に配置される
ことを特徴とする電気光学装置。
A plurality of pixel electrodes;
A thin film transistor provided for each of the plurality of pixel electrodes;
Wherein Ri Contact disposed in a layer between the pixel electrode and the thin film transistor, a first conductive portion overlapping the pixel electrode when viewed in a flat plane, the
And a second conductive portion you electrical connection between the pixel electrode and the drain region of the thin film transistor,
The electro-optical device, wherein the first conductive part has an opening area or a notch area, and the second conductive part is arranged in the opening area or the notch area .
前記第2導電部は、前記第1導電部と同じ透明な導電性材料からなる部分を含むことを特徴とする請求項1に記載の電気光学装置。 The electro-optical device according to claim 1, wherein the second conductive portion includes a portion made of the same transparent conductive material as the first conductive portion. 前記第2導電部は、前記画素電極に電気的に接続された第1中継部と、前記第1中継部と前記薄膜トランジスタのドレイン領域との間を電気的に接続する第2中継部とを備えることを特徴とする請求項1又は2に記載の電気光学装置。 The second conductive portion includes a first relay portion that is electrically connected to the pixel electrode, and a second relay portion that electrically connects the first relay portion and a drain region of the thin film transistor. The electro-optical device according to claim 1 or 2. 前記第1中継部は、前記透明な導電性材料で充填された第1コンタクトホールを介して前記画素電極と前記第2中継電極との間を電気的に接続していることを特徴とする請求項3に記載の電気光学装置。 The first relay portion electrically connects the pixel electrode and the second relay electrode through a first contact hole filled with the transparent conductive material. Item 4. The electro-optical device according to Item 3. 前記第2中継電極は、非透過領域に配置された第2コンタクトホールを介して前記第1中継電極と前記薄膜トランジスタのドレイン領域との間を電気的に接続していることを特徴とする請求項3又は4に記載の電気光学装置。 The second relay electrode claims, characterized in that electrically connects between the non-permeate through a second contact hole which is disposed in the region of the first relay electrode and the drain region of the thin film transistor The electro-optical device according to 3 or 4. 前記画素電極及び前記第1導電部は、容量絶縁膜を介して対向配置されることにより保持容量を形成することを特徴とする請求項1から5のいずれか一項に記載の電気光学装置。   6. The electro-optical device according to claim 1, wherein the pixel electrode and the first conductive portion are disposed to face each other with a capacitance insulating film interposed therebetween, thereby forming a storage capacitor. 前記画素電極、前記第1導電部及び前記第1中継部は共に、ITO(Indium Tin Oxide)からなることを特徴とする請求項1から6のいずれかに記載の電気光学装置。 The electro-optical device according to claim 1, wherein the pixel electrode, the first conductive portion, and the first relay portion are all made of ITO (Indium Tin Oxide). 請求項1から7のいずれか一項に記載の電気光学装置を具備してなることを特徴とする電子機器。   An electronic apparatus comprising the electro-optical device according to claim 1.
JP2008306047A 2008-12-01 2008-12-01 Electro-optical device and electronic apparatus Active JP5233618B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008306047A JP5233618B2 (en) 2008-12-01 2008-12-01 Electro-optical device and electronic apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008306047A JP5233618B2 (en) 2008-12-01 2008-12-01 Electro-optical device and electronic apparatus

Publications (3)

Publication Number Publication Date
JP2010128421A JP2010128421A (en) 2010-06-10
JP2010128421A5 true JP2010128421A5 (en) 2012-01-26
JP5233618B2 JP5233618B2 (en) 2013-07-10

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JP2008306047A Active JP5233618B2 (en) 2008-12-01 2008-12-01 Electro-optical device and electronic apparatus

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JP (1) JP5233618B2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5754207B2 (en) * 2011-03-29 2015-07-29 セイコーエプソン株式会社 Liquid crystal device and electronic device
CN104635988A (en) * 2015-02-10 2015-05-20 京东方科技集团股份有限公司 Touch substrate and manufacturing of touch substrate, touch display panel and display device
JP6756560B2 (en) * 2016-09-27 2020-09-16 株式会社ジャパンディスプレイ Display device
JP7367414B2 (en) 2019-09-10 2023-10-24 セイコーエプソン株式会社 Electro-optical device, method for manufacturing electro-optical device, and electronic equipment

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3838332B2 (en) * 2000-01-24 2006-10-25 日本電気株式会社 Transmission type liquid crystal display device and liquid crystal projector device
JP4821183B2 (en) * 2005-06-24 2011-11-24 セイコーエプソン株式会社 ELECTRO-OPTICAL DEVICE AND ELECTRONIC DEVICE HAVING THE SAME
JP4857775B2 (en) * 2006-01-18 2012-01-18 セイコーエプソン株式会社 Electro-optic device
JP4245008B2 (en) * 2006-05-10 2009-03-25 セイコーエプソン株式会社 Electro-optical device substrate, electro-optical device, and electronic apparatus

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