JP2010111055A - Die member, method of manufacturing die member, and die - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a die member having low micro waviness and causing no shape collapse of a fine structure and to provide a molded product. <P>SOLUTION: The die member 20 includes the fine structure 22 composed of fine grooves 21 or holes, and is fixed to a pressing member to form the fine structure 22 on the molded product including a substrate for a magnetic recording medium. The die member 20 includes a glass substrate 23 with both faces polished, which are a fixed surface 25 fixed to the pressing member and a forming surface 26 which is a surface opposite to the fixed surface 25 and faces the molded product, and an Si thin film 24 formed with the fine grooves 21 or holes with the forming surface 26 of the glass substrate 23 as the bottom. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a mold member, a method for manufacturing a mold member, and a mold, and more particularly, to a mold member having a fine structure in which fine grooves are arranged.

  For example, a method for producing a master mold having a fine structure by patterning a Si substrate by dry etching is known.

  On the master type microstructure, a plating film is grown by electroforming (for example, electrolytic nickel plating). The Ni electroforming stamper having a fine structure is produced by peeling the plating film from the master mold. The Ni electroforming stamper thus produced is used as a mold member for injection molding or nanoimprint.

  However, the Ni electroforming stamper (mold member) having the above-mentioned fine structure has a problem that the height Wa of the micro waviness becomes large. The reason is presumed that when the plating film is peeled off from the master mold, the stress remaining in the plating film is released, and deformation accompanied by undulation occurs.

  This “swell” is a kind of surface shape of the stamper and corresponds to flatness. Also, the one having a period smaller than that of “swell” is called “micro swell”, and the “micro swell” is generated on the “swell”.

  “Waviness (flatness)” is measured by optical interference (Newton ring), and the amount of deviation between the reference plane and the actual plane is measured as interference fringes.

  A cross-sectional example of the interference fringes is shown in FIG. When a wavelength outside the measurement wavelength range is removed in accordance with JIS B0651, a waviness curve 12 representing the waviness of the surface 10 of the stamper is shown. In FIG. 1A, the measurement cross section curve 11 is indicated by a solid line, and the waviness curve 12 is indicated by a broken line.

  “Slight undulation” occurs on “undulation”. FIG. 1 (b) shows an enlarged view of a portion of FIG. 1 (a). In FIG. 1B, the undulation curve 12 replaced with a straight line is indicated by a broken line, and the minute undulation curve 13 is indicated by a solid line.

  In many cases, the “wafer height Wa” is measured by using a multi-function disk interferometer (Optiflat) of “Phase Shift Technology. Inc.”. The measurement principle is a method of measuring a subtle shape change of the surface by irradiating the surface of the stamper with white light and measuring an intensity change of interference between the reference light and the measurement light having different phases. In many cases, the obtained measurement data is defined as “the height Wa of the fine waviness” by cutting off a period of 5 mm or more, or 1 mm or more.

  “Surface roughness” occurs on the curve of “micro waviness”. The arithmetic average roughness Ra, the maximum height Rmax, and the maximum peak height Rp of “surface roughness” according to JIS B0601 are determined. Note that Rmax indicates the difference in height between the highest peak and the deepest valley among the irregularities, and Rp indicates the height of the highest one from the center line among the convex portions.

  When a fine structure is transferred using a Ni electroforming stamper having a large micro-waviness height Wa, a relatively low-order swell component can be reduced by adjusting the transfer conditions. Since the height Wa of the fine waviness, which is the next waviness component, cannot be reduced by adjusting the transfer conditions, for example, the level of the height Wa of the fine waviness required for the hard disk cannot be achieved.

  As a measure for reducing the height Wa of the fine waviness, for example, there is polishing of a Ni electroforming stamper. However, since the surface of the Ni electroforming stamper has a fine structure, it cannot be polished, and it is difficult to reduce the height Wa of the micro waviness by single-side polishing of only the back surface of the Ni electroforming stamper. is there.

  In addition, when an Ni electroforming stamper is produced by electroforming, the Ni electroforming stamper may have a collapsed shape (deformation or defective dimension) due to contamination or film formation abnormality. .

  This invention solves said problem, and it aims at providing the metal mold | die member and molded product with which micro waviness is small and there is no collapse of the shape of a fine structure.

In order to solve the above-mentioned problems, the present invention improves the micro-waviness and surface roughness of the surface of the mold member if the mold member is produced by forming a Si thin film on a glass substrate whose both surfaces are polished. Pay attention.
Specifically, a first aspect of the present invention is a mold member that has a fine structure constituted by fine grooves or holes, and forms the fine structure in a molded product, and is fixed to a pressing member. A glass substrate having both a fixed surface and a surface opposite to the fixed surface, the surface being formed facing the molded product, and the fine groove having the formation surface of the glass substrate as a bottom Or a Si thin film having a hole formed therein.
Moreover, 2nd form of this invention is a metal mold | die member which concerns on 1st form, Comprising: The height Wa of the microwaviness of the said both surfaces of the said glass substrate is 0.5 [nm] or less. Features.
Furthermore, a third aspect of the present invention is a mold member according to either the first aspect or the second aspect, wherein the surface average roughness Ra of the both surfaces of the glass substrate is 0.2 [ nm] or less.
Furthermore, a fourth aspect of the present invention is a mold member according to any one of the first to third aspects, wherein a film having low friction is formed on the fixed surface of the glass substrate. It is characterized by that.
Furthermore, a fifth aspect of the present invention is a mold member according to any one of the first to fourth aspects, wherein a silane coupling film is formed on the Si thin film. To do.
Furthermore, a sixth embodiment of the present invention is a method of manufacturing a mold member for forming a fine structure in a molded product having a fine structure constituted by fine grooves or holes, and is provided on both surfaces of a glass substrate. The Si thin film is formed on the surface of the glass substrate that faces the molded product and is opposite to the fixed surface of the glass substrate that is fixed to the pressing member, and the Si thin film is etched. Then, the fine groove or the hole is formed in the Si thin film by stopping the etching at the formation surface of the glass substrate.
Further, according to a seventh aspect of the present invention, there is provided a pressing member and a mold member that is fixed to the pressing member and has a fine structure constituted by fine grooves or holes, and for forming the fine structure in a molded product. The mold member includes a fixed surface fixed to the pressing member, and a surface opposite to the fixed surface and a forming surface facing the molded product. A mold comprising: a polished glass substrate; and a Si thin film in which the fine grooves or holes having the formation surface of the glass substrate as a bottom are formed.

  According to the first aspect of the present invention, it is possible to reduce the microwaviness on the forming surface of the mold member and to eliminate the collapse of the shape of the fine structure.

  Further, according to the second embodiment of the present invention, since the height Wa of the micro waviness on both surfaces of the glass substrate is set to 0.5 [nm] or less, the accuracy of the height Wa of the micro waviness of the molded product can be increased. It becomes possible.

  Furthermore, according to the 3rd form of this invention, since the surface average roughness Ra of both surfaces of the glass substrate was 0.2 [nm] or less, it is possible to increase the accuracy of the surface average roughness Ra of the molded product. Become.

  Furthermore, according to the fourth aspect of the present invention, it is possible to prevent the pressing member from being damaged when the mold member is thermally expanded and contracted.

  Furthermore, according to the fifth embodiment of the present invention, the silane coupling film has a high affinity for the Si thin film, so that the releasability can be improved.

  Furthermore, according to the sixth embodiment of the present invention, since the groove bottom of the fine structure is formed by the surface on which the glass substrate is formed, a mold member in which the fine structure is not deformed and the fine structure has a uniform depth is manufactured. It becomes possible to do.

  Furthermore, according to the seventh aspect of the present invention, the mold can reduce the micro-waviness of the molded product and eliminate the collapse of the microstructure.

  A configuration of a mold member according to an embodiment of the present invention will be described with reference to FIG. FIG. 2 is a diagram illustrating a manufacturing process of a mold member.

  The mold includes a pressing member (not shown) and a mold member 20 fixed to the pressing member. The mold member 20 has a fine structure 22 formed so that the fine grooves 21 are arranged, and forms the fine structure 22 in a molded product including a magnetic recording medium substrate. The mold member 20 has a glass substrate 23 and a Si thin film 24.

The glass substrate 23 has both surfaces of a fixed surface 25 fixed to the pressing member and a forming surface 26 facing the molded product on the side opposite to the fixed surface 25. Both surfaces of the glass substrate 23 are polished.
The height Wa of the fine ridges on both surfaces of the glass substrate 23 according to the present embodiment is 0.5 [nm] or less, and the surface average roughness Ra is 0.2 [nm] or less.

  The height Wa of the fine waviness is a value measured using the above-mentioned optical flat. Usually, it is defined by cutting off a period of 1 mm to 10 mm. The surface average roughness Ra is a value measured using AFM. Therefore, when the glass substrate 23 according to this embodiment measures the height Wa of the micro waviness defined by cutting off a period of 1 mm to 10 mm using an optical flat, the height of the micro waviness is measured. When Wa is 0.5 [nm] or less and the surface average roughness Ra is measured using AFM, the surface average roughness Ra is 0.2 [nm] or less. In addition, if the height Wa of the microwaviness is 0.5 [nm] or less, the effects and effects of this embodiment are obtained, but the lower limit value is equal to or higher than the detection limit of the optical flat that is a measuring device.

  A Si thin film 24 is formed on the formation surface 26 of the glass substrate 23 that has been polished on both sides. The Si thin film 24 is formed with a fine groove 21 with the formation surface 26 of the glass substrate 23 as a bottom. A method for forming the fine groove 21 will be described later.

(Function and effect)
By polishing both surfaces of the glass substrate 23, it is possible to produce the mold member 20 with small micro-waviness and no deformation of the microstructure 22. Further, by using this mold member 20, it is possible to produce a molded product (for example, a substrate for a hard disk) that has a small undulation and does not collapse the shape of the microstructure 22.

  The definition of the fine structure and the fine groove or hole will be described. The fine structure is a line, hole, or pillar structure having a width and height (or depth) of several nm to several hundred nm. The fine groove or hole is a groove between adjacent fine structures or a hole structure itself among the fine structures.

  Next, the definition of the shape collapse (pattern quality) of the fine structure 22 will be described with reference to FIGS. FIG. 3 is a plan view of a hard disk substrate. FIG. 4 is a diagram for explaining the quality of the pattern. Twelve evaluation areas are extracted on the hard disk substrate. Each evaluation area is a 1 [μm] square area. In FIG. 3, the evaluation areas provided at the positions obtained by dividing the circumference into four equal parts are shown by hatching in FIG. The definition of the shape collapse of the microstructure 22 is based on observing the shape collapse with an AFM. The presence or absence of shape deformation is examined, and a non-defective product or a defective product is determined based on the number of regions without shape deformation. A non-deformable area with 12 points is a non-defective pattern, a non-deformable area is a 6-11 point area, and a non-deformed area is a 0-5 point area. Defective products are indicated by “◯”, “Δ”, and “×” in FIG.

  Next, a method for manufacturing the mold member 20 will be described with reference to FIGS. FIG. 5 is a flowchart of the manufacturing process of the mold member 20.

(Double-side polishing)
In order to obtain the glass substrate 23 according to the present embodiment, a step of reducing the height Wa of the fine waviness and a step of increasing the surface average roughness Ra are required. First, the melt-formed glass substrate 23 is ground to a desired thickness using a diamond grindstone or the like. Then, lapping is performed by blowing abrasive grains with a lapping device to reduce the surface roughness. In the subsequent polishing step, both surfaces of the glass substrate 23 are polished. Thereby, the glass substrate 23 which concerns on this embodiment is produced. Hereinafter, the polishing process will be described in detail.

In the polishing process, the first polishing process and the second polishing process were performed to polish both surfaces of the substrate at the same time.
The polishing machine, polishing cloth, and abrasive used in the polishing process are shown below.
Polishing machine: 16B type double-side polishing machine made by “Hamai Sangyo” Polishing cloth: In the first polishing process, a foamed urethane pad made by “Kanebo” was used, and in the second polishing process, a suede type polishing cloth made by “FILWEL” was used. Using.
Abrasive material: In the first polishing step, an alumina abrasive material (average particle size 1.5 [μm]) made by “Showa Denko” was used, and in the second polishing step, colloidal silica (average particle size 30) made by “Fujimi”. [Nm]) was used.
The conditions for the first polishing step are shown below.
Surface plate rotation speed: 40-60 [rpm]
Polishing load: 40 [g / cm ² ]
Processing time: 25 [minutes]
After polishing under the above conditions, a second polishing step was performed. The conditions for the second polishing step are shown below.
Surface plate speed: 35 [rpm]
Polishing pressure: 60 [g / cm ² ]
Processing time: 15 [minutes]

(Thin film formation)
Next, a Si thin film 24 with a thickness of 50 nm is formed on the formation surface 26 of the glass substrate 23 polished on both sides by CVD (Chemical Vapor Deposition). By forming the Si thin film 24 by CVD, a dense film can be obtained and patterning without defects can be easily performed.

  Note that the Si thin film 24 may be formed on both surfaces of the glass substrate 23. Then, both surfaces of the Si thin film 24 may be polished. The double-side polishing of the Si thin film 24 is performed by the same method using the same apparatus as the double-side polishing of the glass substrate 23 described above.

  By polishing both surfaces of the Si thin film 24, it is possible to produce a mold member 20 having a smaller micro-waviness and no deformation of the microstructure 22 than a mold member having the Si thin film 24 formed on both surfaces of the glass substrate 23. It becomes possible. In addition, a molded product having a smaller undulation and no deformation of the microstructure 22 than a molded product (for example, a hard disk) manufactured using a mold member in which the Si thin film 24 is formed on both surfaces of the glass substrate 23 is manufactured. Is possible.

(Mask formation)
Next, a mask is formed on the Si thin film 24. For this purpose, first, a resist is applied to the Si thin film 24. By using a spin coater, a uniform resist film can be formed on the Si thin film 24. Next, a pattern is formed on the resist film by electron beam drawing. Next, the pattern is developed (step S01). The mask formed on the Si thin film 24 is shown in FIG. As a method for forming a mask on the Si thin film 24, patterning by a nanoimprint method may be used. In FIG. 2A, the portion to be dry-etched in the subsequent process is indicated by hatching.

(Dry etching)
Next, the Si thin film 24 is dry-etched (Step S02). In this dry etching, the etching is stopped on the formation surface 26 of the glass substrate 23 to form the fine groove 21 in the Si thin film 24 with the formation surface 26 of the glass substrate 23 at the bottom. The etching can be performed under the following conditions when ICP is used for an etching apparatus, for example.
Antenna power: 300W
Chamber pressure: 1.0 Pa
Etching gas: SF6
Gas flow rate: 10sccm
In this case, since the Si selection ratio to the resist is about 10 and the Si selection ratio to the glass (eg, quartz) is about 100, the resist functions sufficiently as a mask for processing the fine groove in the Si, and the glass is etched. It can function as a stop layer. Since the selection ratio of Si to glass is very high, it is possible to substantially stop etching on the glass surface only by time management without performing special end point detection, so that under-etching and over-etching can be prevented. .

Next, the resist film is removed from the Si thin film 24 by ashing using O ₂ . The Si thin film 24 from which the resist film has been removed is shown in FIG.

  In the mold member 20 manufactured as described above, the height Wa of the fine surface waviness is 0.5 [nm] or less, the surface average roughness Ra is 0.2 [nm] or less, and the glass This is the same as the height Wa of the surface waviness and the surface average roughness Ra of the substrate 23. Moreover, the thickness of the mold member 20 is 0.5 mm or more. As a result, the rigidity of the mold member 20 is increased, it is difficult for the mold member 20 to bend due to the molding pressure, and the height Wa of the slight waviness can be kept low.

  Further, the bottom of the fine groove 21 of the mold member 20 is reflected on the surface of the molding transfer object. For example, when the surface of the molding transfer object is directly used as a substrate for high density recording medium (molded product), the surface accuracy of the bottom of the fine groove 21 is the most important factor that determines the surface accuracy of the high density recording medium. Become. In the present embodiment, since the bottom of the fine groove 21 of the mold member 20 is the forming surface 26 of the glass substrate 23, the bottom of the fine groove 21 has high surface accuracy. This high surface accuracy can be reflected in the surface accuracy of the high-density recording medium. Furthermore, since the bottom of the fine groove 21 of the mold member 20 is the forming surface 26 of the glass substrate 23, the depth of the fine groove 21 is uniform. Thereby, for example, when the transfer object molded by the mold member is used as a mold for forming a mask pattern for producing a high-density recording medium, the substrate is used for a high-density recording medium substrate. The entire surface can be pressed uniformly.

  Next, a description will be given of manufacturing the hard disk substrate by fixing the mold member 20 to the pressing member.

  A film having a low friction property is formed on the fixing surface 25 of the glass substrate 23 fixed to the pressing member by coating with, for example, diamond-like carbon. Thereby, the frictional resistance with the pressing member can be reduced, and even when the mold member 20 is thermally expanded and contracted, the pressing member and the mold member are hardly damaged. Further, a silane coupling film 27 is formed on the Si thin film 24 (step S04). A Si thin film 24 on which a silane coupling film 27 is formed is shown in FIG. The silane coupling film 27 increases the mold releasability between the mold member and the transferred object, thereby improving the durability of the mold member and suppressing the deformation of the transferred object due to the release resistance. It becomes.

  Further, by using this mold member 20, it is possible to produce a magnetic recording medium substrate (molded product) having a small undulation and no deformation of the microstructure 22. In the manufactured hard disk, the height Wa of the micro waviness is 0.6 [nm] or less, and the surface average roughness Ra is 0.3 [nm] or less. When the height Wa of the slight waviness of the magnetic recording medium substrate (molded product) is 0.6 or less, the magnetic head can easily follow.

[Example]
Next, specific examples will be described.

Example 1
(Double-side polishing process)
First, both surfaces of the glass substrate 23 are polished. The glass of the glass substrate 23 may be medium quality glass. The surface roughness Ra of the glass substrate 23 before double-side polishing is 1 nm.
Here, the surface roughness Ra is defined by an arithmetic average roughness Ra according to JIS B0601. The surface roughness Ra is measured by an AFM (atomic force microscope).
(Si thin film)
After double-side polishing, a Si thin film 24 is formed on the formation surface 26 of the glass substrate 23. In Example 1, the Si thin film 24 was formed by the CVD method.
(Formation of uneven pattern)
Next, a fine uneven pattern was formed on the surface of the Si thin film 24. Specifically, a resist was applied on the Si thin film 24, and an uneven pattern was formed by electron beam drawing. Then, an uneven pattern was formed on the surface of the Si thin film 24 by dry etching.

In Example 1, the target specification of the magnetic recording medium substrate (molded product) was determined as follows.
Flatness (swell): 5um
Slight swell height Wa: 0.6 nm
Surface average roughness Ra: 0.5 nm
Outer diameter: 48mm
Inner diameter: 12mm
Thickness: 0.8mm
Pattern quality: 12 regions with no shape deformation of the fine structure These are shown in FIG. 6 as disk target specifications.
Note that the height Wa of the slight waviness is a value measured using an optical flat. The height Wa of the slight waviness is usually defined by cutting off a period of 1 mm to 10 mm, but in this example, it is defined by cutting off a period of 5 mm.

In Example 1, the following stampers (mold members) were produced.
Flatness, minute waviness Wa, surface average roughness Ra, outer diameter, inner diameter, thickness, and pattern quality were as follows.
Flatness (swell): 3um
Slight swell height Wa: 0.5 nm
Surface average roughness Ra: 0.2 nm
Outer diameter: 65mm
Inner diameter: 13mm
Thickness: 1.3mm
Quality of pattern: 12 regions where the shape of the fine structure is not deformed. These are shown in FIG. 6 when the stamper is used.

Further, in Example 1, the above-described stamper (mold member) was attached to an injection mold, and a resin material was injection molded to produce a magnetic recording medium substrate (molded product). The flatness of the molded product, the height Wa of the slight waviness, the surface average roughness Ra, the outer diameter, the inner diameter, the thickness, and the pattern quality were as follows.
Flatness (swell): 5um
Slight swell height Wa: 0.6 nm
Surface average roughness Ra: 0.3 nm
Outer diameter: 48mm
Inner diameter: 12mm
Thickness: 0.8mm
Quality of pattern: 12 regions where the fine structure is not deformed The entire region is shown in FIG.
According to the above measurement results, in Example 1, the stamper and the molded product produced with the stamper satisfied the target specification.

(Comparative example)
Next, a comparative example will be described.
A Ni stamper according to a comparative example was produced by electroforming as follows. First, a BPM pattern was formed on the Si substrate by EB. Next, the Si patterned substrate was subjected to electrolytic nickel plating (electroforming), and only the back surface was polished.
In the comparative example, the Ni stamper described above was used.
In the comparative example, the flatness, slight waviness Wa, surface average roughness Ra, outer diameter, inner diameter, thickness, and pattern quality of the Ni stamper were as follows.
Flatness (swell): 70um
Slight undulation height Wa: Measurement range over Surface average roughness Ra: 0.8 nm
Outer diameter: 65mm
Inner diameter: 13mm
Thickness: 1.3mm
Pattern quality: 6 to 11 points where the fine structure has no shape deformation These are shown in FIG. 6 when the Ni stamper is used.

Furthermore, in this comparative example, the above-mentioned Ni stamper (mold member) was attached to an injection mold and a resin material was injection molded to produce a magnetic recording medium substrate (molded product). The flatness of the molded product, the height Wa of the slight waviness, the surface average roughness Ra, the outer diameter, the inner diameter, the thickness, and the pattern quality were as follows.
Flatness (swell): 7um
Slight swell height Wa: 3 nm
Surface average roughness Ra: 1 nm
Outer diameter: 48mm
Inner diameter: 12mm
Thickness: 0.8mm
Pattern quality: The area where the shape of the microstructure does not collapse is 0 to 5 points According to the above measurement results, in the comparative example, the Ni stamper and the molded product made with the Ni stamper do not meet the target specification. It was.

(Example 2)
Next, a stamper and a molded product according to Example 2 will be described with reference to FIG. FIG. 7 is a diagram showing the relationship between the slight waviness Wa of the stamper and the slight waviness Wa of the molded product. When the stamper has a constant thickness of 1.3 mm, the relationship between the small waviness Wa of the stamper and the small waviness Wa of the molded product is shown below.
When the fine waviness Wa of the stamper was 0.4 nm, the fine waviness Wa of the molded product was 0.52 nm, and the target specification of the fine waviness Wa of the molded product was 0.6 nm or less. Further, when the fine waviness Wa of the stamper was 0.49 nm, the fine waviness Wa of the molded product was 0.6 nm, which satisfied the target specification 0.6 nm or less of the small waviness Wa of the molded product. Furthermore, when the fine waviness Wa of the stamper was 0.61 nm, the fine waviness Wa of the molded product was 0.69 nm, and the target specification 0.6 nm or less of the small waviness Wa of the molded product was not satisfied.
According to the above relationship, it has been derived that the target specification of the slight waviness Wa of the stamper is 0.5 nm or less in order that the target specification of the small waviness Wa of the molded product is 0.6 nm or less.

(Example 3)
Next, a stamper and a molded product according to Example 3 will be described with reference to FIG. FIG. 8 is a diagram showing the relationship between the thickness of the stamper and the slight waviness Wa of the molded product. When the slight waviness Wa of the stamper is set to a substantially constant 0.49 to 0.5, the relationship between the thickness of the stamper and the slight waviness Wa of the molded product is shown below.
When the thickness of the stamper was 0.3 mm, the minute waviness Wa of the molded product was 0.65 nm, and the target specification 0.6 nm or less of the minute waviness Wa of the molded product was not satisfied. Moreover, when the thickness of the stamper was 0.5 mm, the small waviness Wa of the molded product was 0.59 nm, and the target specification of the small waviness Wa of the molded product was 0.6 nm or less. Furthermore, when the thickness of the stamper was 1.3 mm, the small waviness Wa of the molded product was 0.6 nm, and the target specification of the small waviness Wa of the molded product was 0.6 nm or less.
According to the above relationship, it has been derived that the target specification of the stamper thickness is 0.5 mm or more in order that the target specification of the minute waviness Wa of the molded product is 0.6 nm or less.
The above-described embodiment is an example of the present invention. For example, although a magnetic recording medium substrate was produced by an injection molding method, a magnetic recording medium substrate (molded product) was produced by a nanoimprint method using the stamper (mold member) produced in the example. The same effect as the above-described embodiment can be obtained.

It is an expanded sectional view of a stamper for explaining a wave of the surface of a stamper, and surface roughness. It is a figure which shows the manufacturing process of the metal mold | die member which concerns on one Embodiment of this invention. It is a top view of the hard disk which showed the evaluation area by hatching. It is a figure explaining the quality of the pattern. It is a flowchart of the manufacturing process of a mold member. It is the figure which showed the measurement result of the stamper which concerns on Example 1, and the Ni stamper which concerns on a comparative example. In Example 2, it is the figure which showed the relationship between the fine wave | undulation Wa of a stamper, and the fine wave | undulation Wa of a molded article. In Example 3, it is the figure which showed the relationship between the thickness of a stamper, and slight waviness Wa of a molded article.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Stamper surface 11 Measurement cross section curve 12 Waviness curve 13 Micro waviness curve 20 Mold member 21 Fine groove 22 Fine structure 23 Glass substrate 24 Si thin film 25 Fixed surface 26 Forming surface 27 Silane coupling system film

Claims (7)

A mold member for forming a fine structure in a molded product having a fine structure constituted by fine grooves or holes,
A glass substrate having a fixed surface fixed to the pressing member and a surface opposite to the fixed surface and polished on both sides of the forming surface facing the molded product;
An Si thin film in which the fine groove or hole having the formation surface of the glass substrate as a bottom is formed;
A mold member characterized by comprising:   2. The mold member according to claim 1, wherein the height Wa of the microwaviness on the both surfaces of the glass substrate is 0.5 [nm] or less.   The mold member according to claim 1 or 2, wherein the surface average roughness Ra of the both surfaces of the glass substrate is 0.2 [nm] or less.   The mold member according to any one of claims 1 to 3, wherein a film having low friction is formed on the fixed surface of the glass substrate.   The mold member according to any one of claims 1 to 4, wherein a silane coupling film is formed on the Si thin film. A method of manufacturing a mold member for forming a microstructure in a molded product having a microstructure constituted by a fine groove or a hole,
Polish both sides of the glass substrate,
A Si thin film is formed on the surface of the glass substrate facing the molded product, which is the surface opposite to the fixed surface of the glass substrate fixed to the pressing member,
The method for producing a mold member, wherein the Si thin film is etched, and the etching is stopped at the formation surface of the glass substrate to form the fine groove or hole in the Si thin film. A mold comprising a pressing member and a mold member fixed to the pressing member and having a microstructure constituted by fine grooves or holes, and a mold member for forming the microstructure in a molded product,
The mold member is
A glass substrate having a fixed surface fixed to the pressing member and a surface opposite to the fixed surface, the both surfaces of the forming surface facing the molded product being polished;
An Si thin film in which the fine groove or hole having the formation surface of the glass substrate as a bottom is formed;
A mold characterized by having.