JP2010092518A - Optical pickup, optical information recording method, and optical disk device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To improve accuracy of recoding information on an optical disk. <P>SOLUTION: An information optical system 150 of an optical disk device 110 can position at a distance an absorption variation region RA based on a specific peak light LEP in a recording layer 101 by sequentially outputting the specific peak light LEP and a specific slope light LES as an information light beam LM from a semiconductor laser 3, and changing the divergence angle of the specific peak light LEP by means of a correction lens 162. An energy concentration region RE based on the specific slope light LES can be formed in the vicinity of a target position QG, and the recording accuracy of information on an optical disk 100 can be improved. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to an optical pickup, an optical information recording method, and an optical disc apparatus, and is suitable for application to an optical disc apparatus that records information on an optical disc using a light beam, for example.

  Conventionally, in an optical disc apparatus, information is recorded on a disc-shaped optical disc such as a CD (Compact Disc), a DVD (Digital Versatile Disc), and a Blu-ray Disc (registered trademark, hereinafter referred to as BD). A device that reads out the information from the optical disk is widely used.

  In such an optical disc apparatus, various kinds of information such as various contents such as music contents and video contents, or various data for a computer are recorded on the optical disc.

  In particular, in recent years, the amount of information has increased due to higher definition of video and higher sound quality of music, and an increase in the number of contents to be recorded on one optical disc has been demanded. It has been demanded.

Therefore, as one of the techniques for increasing the capacity of such an optical disc, there has been proposed one that uses a two-photon absorption reaction to form recording pits representing information and arranges the recording pits three-dimensionally (for example, patents). Reference 1).
JP-A-2005-37658

  By the way, as a method for forming a recording mark on an optical disc, the first light beam is condensed to cause a first reaction by a two-photon absorption reaction, and the second light beam is further collected in the region where the reaction has occurred. A method of generating a second reaction such as a thermal reaction by light can be considered.

  When the recording mark is formed on the optical disc by such a method, the optical disc apparatus collects the first light beam to cause the first reaction, and then generates the second light in accordance with the change region where the reaction has occurred. By focusing the beam, a second reaction can be caused.

  At this time, if the optical disk apparatus can basically adjust both the focal point of the first light beam and the focal point of the second light beam to the target position, the recording mark is correctly positioned at the target position. Can be formed.

  However, depending on the type of the optical disc, the change region may be colored by the first reaction, and at this time, the transmittance of the light beam decreases in the change region. In this case, in the optical disk, even if the second light beam is condensed at the target position, the second reaction is biased toward the side irradiated with the second light beam, and the recording mark becomes the target. It will be shifted from the position to be.

As described above, when the optical disc apparatus is colored by the first reaction when a recording mark is formed by irradiating a plurality of light beams, the recording mark cannot be correctly formed at a desired position in the optical disc, and information recording is performed. There was a problem that accuracy was lowered.

  The present invention has been made in consideration of the above points, and an object of the present invention is to propose an optical pickup, an optical information recording method, and an optical disc apparatus capable of improving the recording accuracy of information on an optical disc.

  In order to solve such a problem, in the optical pickup and the optical information recording method of the present invention, a pulsed light is supplied to the semiconductor laser from the semiconductor laser by supplying a driving pulse having a predetermined singular voltage. A specific peak light having an intensity characteristic and a specific slope light having a light intensity characteristic in a slope shape having a light intensity smaller than that of the specific peak light and having a wavelength different from the specific peak light are sequentially emitted as laser light, The divergence angle of the singular peak light and singular slope light is made different according to the wavelength of the laser light by the predetermined divergence angle difference part, and the singular peak light is condensed by the predetermined objective lens on the recording layer of the optical disc, and in the vicinity of the focal point. After the first reaction is caused in the region, the singular slope light is collected, so that the singular slope light in the region where the first reaction has occurred is illuminated. A recording mark is formed by generating a second reaction on the recording side, and in the divergence angle difference portion, the first reaction is performed in a range including the focal point in the recording layer centering on a position far from the focal point of the specific slope light. Thus, the divergence angles of the specific peak light and the specific slope light are made different.

  Thereby, in the optical pickup and the optical information recording method of the present invention, the focal position of the singular peak light can be positioned farther than the focal position of the singular slope light, and the singular peak light is the reaction region where the first reaction occurs. It can be kept away from the irradiated side. As a result, even if the reaction region is colored by the first reaction and the second reaction due to the specific slope light is biased to the side irradiated with the light beam in the reaction region, the focus of the specific slope light is centered. In other words, a recording mark can be formed at a target position.

  Furthermore, in the optical disk device of the present invention, when a drive pulse having a pulse shape and a predetermined singular voltage is supplied, the singular peak light having the pulsed light intensity characteristic and the light intensity is smaller than the singular peak light. A semiconductor laser that sequentially emits as a laser beam a specific slope light having a slope-like light intensity characteristic and a wavelength different from that of the specific peak light, and divergence of the specific peak light and the specific slope light according to the wavelength of the laser light The divergence angle difference portion that makes the angle different and the recording layer of the optical disc collect the singular peak light and cause the first reaction in the region near the focal point, and then the singular slope light is condensed. By driving the objective lens that generates a recording mark by generating a second reaction on the side irradiated with the specific slope light in the region where the reaction occurs, A lens drive control unit that controls the position of the focal point in the different peak light and the specific slope light, and the divergence angle difference unit is the first in a range including the focal point in the recording layer centering on a far distance from the focal point of the specific slope light. The divergence angles of the specific peak light and the specific slope light are made different so as to cause the above reaction.

  As a result, the optical disk apparatus of the present invention can position the focal position of the singular peak light farther than the focal position of the singular slope light, and the reaction region where the first reaction occurs from the side on which the singular peak light is irradiated. You can keep away. As a result, even if the reaction region is colored by the first reaction and the second reaction due to the specific slope light is biased to the side irradiated with the light beam in the reaction region, the focus of the specific slope light is centered. In other words, a recording mark can be formed at a target position.

  According to the present invention, the focal position of the specific peak light can be positioned farther than the focal position of the specific slope light, and the reaction region in which the first reaction occurs can be moved away from the side irradiated with the specific peak light. it can. As a result, even if the reaction region is colored by the first reaction and the second reaction due to the specific slope light is biased to the side irradiated with the light beam in the reaction region, the focus of the specific slope light is centered. In other words, a recording mark can be formed at a target position. Thus, according to the present invention, it is possible to realize an optical pickup, an optical information recording method, and an optical disc apparatus that can improve information recording accuracy on an optical disc.

Hereinafter, the best mode for carrying out the invention (hereinafter referred to as an embodiment) will be described with reference to the drawings. The description will be given in the following order.
1. 1. Information recording / reproduction principle for optical information recording media 2. Output principle of light beam by semiconductor laser Embodiment (example using optical disk device / correction lens)
4). Other embodiments

<1. Principle of recording / reproducing information on optical information recording media>
First, the principle of recording information on an optical information recording medium such as an optical disk will be described. In general, when the numerical aperture of the objective lens is NA and the wavelength of the light beam is λ, the spot diameter d when the light beam is condensed is expressed by the following equation (1).

  That is, when the same objective lens is used, since the numerical aperture NA is constant, the spot diameter d of the light beam is proportional to the wavelength λ of the light beam.

  As shown in FIG. 1, the light intensity of the collected light beam is highest near the focal point FM, and decreases as the distance from the focal point FM increases. For example, when a recording mark RM representing information is formed on a general optical information recording medium MD1, a one-photon absorption reaction occurs. In this one-photon absorption, since a photoreaction occurs by absorbing one photon, the photoreaction occurs in proportion to the light intensity of the light beam.

  For this reason, in the optical information recording medium, the recording mark RM is formed in a region where the recording light beam L1 has a predetermined light intensity or more. Incidentally, FIG. 1 shows a case where a recording mark RM having the same size as the spot diameter d is formed.

  On the other hand, in the case of the two-photon absorption reaction, the reaction occurs only when two photons are absorbed at the same time. Therefore, the two-photon absorption reaction occurs in proportion to the square of the light intensity of the light beam. For this reason, in the optical information recording medium MD2 in which the two-photon absorption reaction occurs, as shown in FIG. 2, the recording mark RM is formed only in the vicinity of the focal point FM having a very high light intensity in the recording light beam L1.

  The recording mark RM has a smaller size than the spot diameter d of the recording light beam L1, and its diameter da is also reduced. Therefore, in the optical information recording medium MD2, the recording capacity can be increased by forming the recording marks RM at a high density.

By the way, among the two-photon absorption materials, a compound that causes a chemical change by a two-photon absorption reaction and changes its light absorption characteristics (hereinafter, referred to as a light characteristic change material) is known (for example, Non-Patent Document 1). reference).
A. Toriumi and S. Kawata, Opt. Lett / Vol. 23, No. 24, 1998, 1924-1926

  For example, with respect to the optical information recording medium MD2 made of this optical property changing material, a recording light beam L1 having a wavelength that is not inherently absorbed by the optical property changing material is changed from time t1 as shown by the light intensity property WL shown in FIG. Assume that the light is irradiated with a large light intensity over a certain irradiation time tc.

  In this case, the optical information recording medium MD2 made of this optical property changing material is irradiated with the spot P by the recording light beam L1, as shown in FIG. 4A, at time t1. Thereafter, the optical information recording medium MD2 changes the light absorption of the optical property changing material by the two-photon absorption reaction as shown in FIG. 4B at time t2, and the absorption change smaller than the spot P by the recording light beam L1. Region RA is formed.

  In the absorption change region RA, the recording light beam L1 is absorbed and heat is generated due to the change in the light absorption of the optical property changing material. Further, the absorption change region RA is colored by the two-photon absorption reaction, and the transmittance of the light beam is lowered.

  Thereafter, if the recording light beam L1 continues to be irradiated as it is, the optical information recording medium MD2 absorbs the recording light beam L1 and generates heat, and at time t3, the refractive index is changed by a thermal reaction or a cavity is formed. As a result, a recording mark RM is formed as shown in FIG.

  In other words, in the optical information recording medium MD2, the recording mark RM is formed in the region where the recording light beam L1 is continuously irradiated and the thermal reaction occurs in the absorption change region RA formed by the two-photon absorption reaction. become.

  Further, when the recording mark RM formed in this manner is irradiated with the reading light beam L2 having a relatively low light intensity, the refractive index differs from that of the surrounding optical property changing material, so that the reading mark The return light beam L3 is generated by reflecting the light beam L2.

  Therefore, the optical information recording / reproducing apparatus of the present invention utilizes such a principle, and when recording information, the optical information recording medium MD2 is irradiated with the recording light beam L1 to first cause a two-photon absorption reaction. Then, the recording mark RM is formed by changing the light absorption and subsequently changing the refractive index by thermal reaction or forming a cavity.

  In the optical information recording / reproducing apparatus of the present invention, when reproducing information, the optical information recording medium MD2 is irradiated with the reading light beam L2 and the return light beam L3 is received. At this time, the optical information recording / reproducing apparatus detects the presence / absence of the recording mark RM based on the change in the light amount of the return light beam L3, and reproduces the information based on the detection result.

<2. Principle of short pulse output by semiconductor laser>
Next, the principle of outputting a laser beam LL having a high light intensity and a short pulse shape that can cause a two-photon absorption reaction from the semiconductor laser will be described.

[2-1. Configuration of short pulse light source]
Here, the short pulse light source device 1 shown in FIG. 5 will be described as an example. The short pulse light source device 1 includes a laser control unit 2 and a semiconductor laser 3.

  The semiconductor laser 3 is a general semiconductor laser using semiconductor light emission (for example, SLD3233 manufactured by Sony Corporation). The laser control unit 2 outputs a pulsed laser beam LL from the semiconductor laser 3 by controlling the drive signal D <b> 1 supplied to the semiconductor laser 3.

  The laser control unit 2 includes a pulse signal generator 4 that generates a plurality of types of pulse signals at a predetermined timing, and a drive circuit 6 that drives the semiconductor laser 3 (details will be described later).

  The pulse signal generator 4 generates a synchronization signal SS that is a rectangular wave having a predetermined cycle TS inside thereof, operates at a timing based on the synchronization signal SS, and outputs the synchronization signal SS to an external measuring device. Etc. (not shown).

  Further, as shown in FIG. 6A, the pulse signal generator 4 generates a pulse signal SL that changes in a pulse shape every period TS, and supplies the pulse signal SL to the drive circuit 6. This pulse signal SL indicates the timing, period, and voltage level at which power should be supplied to the semiconductor laser 3 to the drive circuit 6.

  The drive circuit 6 generates a laser drive signal SD as shown in FIG. 6B based on the pulse signal SL and supplies it to the semiconductor laser 3.

  At this time, the drive circuit 6 generates the laser drive signal SD by amplifying the pulse signal SL at a predetermined amplification factor. For this reason, the peak voltage VD of the laser drive signal SD changes according to the peak voltage VL of the pulse signal SL. Incidentally, the waveform of the laser drive signal SD is distorted due to the amplification characteristic of the drive circuit 6.

  When receiving the laser drive signal SD, the semiconductor laser 3 emits the laser beam LL while changing the light intensity LT in a pulse shape as shown in FIG. 6C. Hereinafter, emitting laser light in a pulse shape is referred to as “pulse output”.

  As described above, the short pulse light source device 1 is configured to directly output the laser beam LL from the semiconductor laser 3 without using other optical components or the like under the control of the laser control unit 2.

[2-2. Laser pulse output by relaxation oscillation mode]
Incidentally, it is generally known that the characteristics of a laser are expressed by a so-called rate equation. For example, confinement coefficient Γ, photon lifetime τ _ph [s], carrier lifetime τ _s [s], spontaneous emission coupling coefficient Cs, active layer thickness d [mm], elementary charge q [C], maximum gain g _max , Using the carrier density N, the photon density S, the injected carrier density J, the speed of light c [m / s], the transparent carrier density N0, the group refractive index ng, and the area Ag, the rate equation is as shown in the following equation (2): It is expressed in

  Next, the result of calculating the relationship between the injected carrier density J and the photon density S based on the rate equation (2) is shown in the graph of FIG. 7, and the relationship between the injected carrier density J and the carrier density N is calculated. The results are shown in the graph of FIG.

Incidentally, these calculation results are as follows: confinement coefficient Γ = 0.3, photon lifetime τ _ph = 1e ⁻¹² [s], carrier lifetime τ _s = 1e ⁻⁹ [s], spontaneous emission coupling coefficient Cs = 0.03, The active layer thickness d = 0.1 [μm], the elementary charge q = 1.6e ⁻¹⁹ [C], and the area Ag = 3e ⁻¹⁶ [cm ² ].

  As shown in FIG. 8, a general semiconductor laser emits light at a pre-saturation point Sl where the carrier density N is slightly before the saturation state as the injected carrier density J (that is, the laser drive signal SD) increases. Start.

  As shown in FIG. 7, the semiconductor laser increases the photon density S (that is, the light intensity) as the injected carrier density J increases. Further, as shown in FIG. 9 corresponding to FIG. 7, it can be seen that the semiconductor laser further increases the photon density S as the injected carrier density J further increases.

  Next, points PT1 where the injected carrier density J is relatively large and points PT2 and PT3 where the injected carrier density J sequentially decreases from the point PT1 are selected on the characteristic curve shown in FIG.

  Subsequently, the results of calculating the change of the photon density S after the start of application of the laser drive signal SD at the points PT1, PT2, and PT3 are shown in FIGS. 10, 11, and 12, respectively. Incidentally, the magnitude of the injected carrier density J corresponds to the magnitude of the laser drive signal SD supplied to the semiconductor laser, and the magnitude of the photon density S corresponds to the magnitude of the light intensity.

  As shown in FIG. 10, at the point PT1, the photon density S greatly oscillates by so-called relaxation oscillation, the amplitude thereof increases, and the oscillation period ta at which the amplitude period (that is, from the minimum value to the minimum value) is about It was confirmed to be as small as 60 [ps]. In addition, the value of the photon density S has the largest amplitude of the first wave that appears immediately after the start of light emission, gradually attenuates to the second wave and the third wave, and eventually becomes stable.

The maximum value of the first wave in the photon density S at the point PT1 is about 3 × 10 ¹⁶ , which is about three times the stable value (about 1 × 10 ¹⁶ ) that is a value when the photon density S is stabilized.

  Here, assuming that the time from the start of applying the laser drive signal SD to the start of light emission is the light emission start time τd, the light emission start time τd can be calculated from the rate equation shown in equation (2).

  That is, if the photon density S = 0 before oscillation, the upper equation in equation (2) can be expressed as the following equation (3).

Here, if the carrier density N and threshold value N _th, can be expressed as shown below (4) of the light emission start time .tau.d.

  Thus, it can be seen that the emission start time τd is inversely proportional to the injected carrier density J.

  As shown in FIG. 10, at the point PT1, the light emission start time τd is calculated as about 200 [ps] from the equation (4). At this point PT1, since the laser drive signal SD having a large voltage value is applied to the semiconductor laser, the light emission start time τd from the start of applying the laser drive signal SD to the start of light emission is also shortened.

  As shown in FIG. 11, at the point PT2 where the value of the laser drive signal SD is smaller than the point PT1, a clear relaxation vibration is generated, but the vibration amplitude is smaller than the point PT1, and the vibration period ta. Increased to about 100 [ps].

In the case of the point PT2, the light emission start time τd calculated from the equation (4) is about 400 [ps], which is longer than the point PT1. At this point PT2, the maximum value of the first wave at the photon density S is about 8 × 10 ¹⁵ , which is about twice the stable value (about 4 × 10 ¹⁵ ).

As shown in FIG. 12, almost no relaxation oscillation was observed at the point PT3 where the value of the laser driving signal SD supplied from the point PT2 was even smaller. In the case of the point PT3, the light emission start time τd calculated from the equation (4) is about 1 [ns], and it was confirmed that the time was relatively long. The maximum value of the photon density S at this point PT3 was almost the same as the stable value, and was about 1.2 × 10 ¹⁵ .

  By the way, in a general laser light source, a laser drive signal SD having a relatively low voltage with almost no relaxation oscillation as shown at point PT3 is applied to the semiconductor laser. In other words, a general laser light source stabilizes the output of the laser light LL by suppressing the fluctuation range of the light intensity immediately after the start of laser light emission.

  In the following, in the short pulse light source device 1, an operation mode in which a laser drive signal SD having a relatively low voltage is supplied to the semiconductor laser 3 to output laser light LL having a stable light intensity without causing relaxation oscillation. This is called normal mode. In addition, the voltage of the laser drive signal SD supplied to the semiconductor laser 3 in this normal mode is referred to as a normal voltage VN, and the laser beam LL output from the semiconductor laser 3 is referred to as a normal output light LN.

  In addition to this, the short pulse light source device 1 according to the present embodiment generates relaxation oscillations in the light intensity characteristics when the laser drive signal SD having a relatively high voltage is supplied as in the case of the points PT1 and PT2. Operation mode (hereinafter referred to as relaxation oscillation mode).

  In this relaxation oscillation mode, the short pulse light source device 1 increases the voltage V of the laser drive signal SD (hereinafter referred to as the oscillation voltage VB) higher than the normal voltage VN (for example, 1.5 times or more). As a result, the short pulse light source device 1 can increase the maximum value of the instantaneous light intensity LT of the laser light more than in the normal mode.

  That is, when the short pulse light source device 1 operates in the relaxation oscillation mode, the laser beam LL having a large light intensity corresponding to the oscillation voltage VB is supplied by supplying a relatively high oscillation voltage VB to the semiconductor laser 3. Can be emitted.

  From another point of view, the semiconductor laser 3 is applied with the laser drive signal SD having the oscillation voltage VB, so that the light intensity of the laser beam LL is higher than that of the conventional case where the normal voltage VN is applied. Can be greatly increased.

For example, in the semiconductor laser, the photon density S due to the first wave of relaxation oscillation is about 3 × 10 ¹⁶ at the point PT1, and the case of the point PT3 (about 1.2 × 10 ¹⁵ ) indicating the case where the normal voltage VDN is applied. In comparison, the light intensity of the semiconductor laser 3 can be increased by 20 times or more.

  FIG. 13 shows a waveform of light intensity characteristics measured when a laser drive signal SD having a relatively high voltage is applied to a general semiconductor laser (SLD 3233VF, manufactured by Sony Corporation). FIG. 13 shows the waveform of the light intensity characteristic of the laser beam LL obtained as a result of supplying a laser drive signal SD in the form of a rectangular pulse to the semiconductor laser.

  From FIG. 13, it was confirmed that the relaxation oscillation seen as the calculation result of the photon density S in FIGS. 10 and 11 also occurs as a change in the actual light intensity.

  Here, the relationship between the laser drive signal SD supplied to the semiconductor laser 3 and the light intensity of the laser beam LL will be examined in detail.

  FIG. 14A shows how the photon density S changes with time, as in FIG. For example, as shown in FIG. 14B, the laser control unit 2 of the short pulse light source device 1 supplies the semiconductor laser 3 with a pulsed laser drive signal SD having an oscillation voltage VB1 sufficient to cause relaxation oscillation. To do.

  At this time, the laser controller 2 changes the laser drive signal SD from the low level to the high level over a time obtained by adding the oscillation period ta of the relaxation oscillation to the emission start time τd (that is, τd + ta, hereinafter referred to as the supply time τPD). To make a rectangular pulse signal.

  For convenience of explanation, the portion of the laser drive signal SD that rises in a pulse shape is called a drive pulse PD1.

  As a result, as shown in FIG. 14C, the semiconductor laser 3 emits pulsed laser light LL (hereinafter referred to as vibration output light LB) corresponding to only the first wave portion in the relaxation oscillation. be able to.

  At this time, since the laser control unit 2 supplies the drive pulse PD in the form of pulses, the application time of the high oscillating voltage VB can be kept relatively short, and the average power consumption of the semiconductor laser 3 can be reduced and excessive. It is possible to prevent malfunction and destruction of the semiconductor laser 3 due to heat generation or the like.

  On the other hand, as shown in FIG. 14D, the laser control unit 2 supplies the semiconductor laser 3 with a drive pulse PD2 having a vibration voltage VB2 that is high enough to cause relaxation vibration and lower than the vibration voltage VB1. It is made to be able to supply.

  In this case, as shown in FIG. 14E, the semiconductor laser 3 can emit the vibration output light LB having a light intensity smaller than that when the drive pulse PD1 is supplied.

  As described above, the short pulse light source device 1 can operate in the relaxation oscillation mode in which the drive pulse PD (that is, the drive pulse PD1 or PD2) having a relatively high oscillation voltage VB is supplied from the laser control unit 2 to the semiconductor laser 3. Has been made. At this time, the short pulse light source device 1 can emit the vibration output light LB whose light intensity changes in a pulse shape due to relaxation vibration.

[2-3. Pulse output of laser light by singular mode]
In addition to the normal mode and the relaxation oscillation mode, the short pulse light source device 1 is also operated in a singular mode in which a drive pulse PD having a singular voltage VE higher than the oscillation voltage VB is supplied to the semiconductor laser 3. .

  At this time, the short pulse light source device 1 can pulse-output the laser beam LL having a light intensity higher than that of the vibration output light LB from the semiconductor laser 3.

[2-3-1. Configuration of light measurement device]
Here, when the voltage V of the drive pulse PD in the short pulse light source device 1 is changed by using the light measurement device 11 (FIG. 15) that measures and analyzes the laser light LL emitted from the short pulse light source device 1 An experiment was conducted to measure the light intensity of the laser beam LL.

  The light measuring device 11 emits laser light LL from the semiconductor laser 3 of the short pulse light source device 1 and makes it incident on the collimator lens 12.

  Subsequently, the light measurement device 11 converts the laser light LL from diverging light into parallel light by the collimator lens 12 and enters the light into the condensing lens 15, and further condenses the condensing lens 15.

  Thereafter, the light measurement device 11 supplies the laser light LL to the optical sample oscilloscope 16 (C8188-01, manufactured by Hamamatsu Photonics Co., Ltd.), thereby measuring the light intensity of the laser light LL, and measuring the temporal change of the light intensity characteristics. This is indicated as UT (to be described later).

  The light measuring device 11 analyzes the wavelength of the laser beam LL by supplying the laser beam LL to the optical spectrum analyzer 17 (Q8341, manufactured by ADC Co., Ltd.), and determines the distribution characteristic of the wavelength characteristic UW (described later). As shown).

  In the light measuring device 11, a power meter 14 (manufactured by ADC Corporation, Q8230) is installed between the collimator lens 12 and the condenser lens 15, and the power meter 14 measures the light intensity LT of the laser light LL. It is made to do.

  Furthermore, the light measurement device 11 can be configured to install a BPF (Band Pass Filter) 13 between the collimator lens 12 and the condenser lens 15 as necessary. This BPF 13 can reduce the transmittance of a specific wavelength component in the laser light LL.

[2-3-2. Relationship between set pulse and drive pulse]
By the way, in the short pulse light source device 1, since the actually generated pulse signal SL, laser drive signal SD, and the like are so-called high-frequency signals, so-called “smooth” waveforms in which the respective waveforms are deformed from ideal rectangular waves. It is expected that

  Therefore, the pulse signal generator 4 is set to output a pulse signal SL including a rectangular set pulse PLs having a pulse width Ws of 1.5 [ns] as shown in FIG. When this pulse signal SL was measured by a predetermined measuring device, a measurement result as shown in FIG. 16B was obtained.

  In the pulse signal SL of FIG. 16B, the generated signal pulse half-value width PLhalf which is the half-value width of a pulse generated corresponding to the set pulse PLs (hereinafter referred to as the generated pulse PL) is about 1.5. [Ns].

  Further, when the pulse signal SL described above was supplied from the pulse signal generator 4 to the drive circuit 6, the laser drive signal SD actually supplied from the drive circuit 6 to the semiconductor laser 3 was measured in the same manner. A measurement result as shown in FIG. 16C was obtained.

  In this laser drive signal SD, a drive pulse half-value width PDhalf which is a half-value width of a pulse appearing corresponding to the generated pulse PL (that is, drive pulse PD) is about 1.5 [ns] according to the signal level of the generated pulse PL. ] To about 1.7 [ns].

  The relationship of the voltage pulse half-value width PDhalf in the drive pulse PD to the maximum voltage value of the generated pulse PL at this time and the relationship of the maximum voltage value Vmax of the drive pulse PD to the maximum voltage value of the generated pulse PL are superimposed on FIG. Show.

  From FIG. 17, as the maximum voltage value of the generated pulse PL supplied to the drive circuit 6 increases, the maximum voltage value Vmax of the drive pulse PD in the laser drive signal SD output from the drive circuit 6 also increases. I understand.

  In addition, it can be seen from FIG. 17 that as the maximum voltage value of the generated pulse PL supplied to the drive circuit 6 increases, the drive pulse half width PDhalf of the drive pulse PD also gradually increases.

  In other words, the short pulse light source device 1 has the maximum voltage value of the generated pulse PL supplied to the drive circuit 6 even when the set pulse PLs having a constant pulse width is set in the pulse signal generator 4. By changing, the pulse width and voltage value of the drive pulse PD in the laser drive signal SD output from the drive circuit 6 can be changed.

[2-3-3. Relationship between drive pulse voltage and output laser beam]
Therefore, when the maximum voltage value Vmax of the drive pulse PD is set to various values, the light intensity of the laser light LL output from the semiconductor laser 3 according to the drive pulse PD is determined by the light measuring device 11 (FIG. 15). The optical sample oscilloscope 16 was used for measurement.

  18A and 18B show the results of this measurement. In FIG. 18, the time axis (horizontal axis) represents relative time and does not represent absolute time. In this measurement, the BPF 13 is not installed.

  As shown in FIG. 18A, when the maximum voltage value Vmax of the drive pulse PD is 8.8 [V], the light intensity characteristic UT1 of the laser light LL has a relatively wide and small output peak (time 1550 [ps] ] In the vicinity) was confirmed, and no vibration due to relaxation vibration was observed. That is, the light intensity characteristic UT1 indicates that the short pulse light source device 1 operates in the normal mode and outputs the normal output light LN from the semiconductor laser 3.

  As shown in FIG. 18A, when the maximum voltage value Vmax of the drive pulse PD is 13.2 [V], a plurality of peaks due to relaxation oscillation are confirmed in the light intensity characteristic UT2 of the laser light LL. It was. That is, the light intensity characteristic UT2 indicates that the short pulse light source device 1 operates in the relaxation oscillation mode and outputs the oscillation output light LB from the semiconductor laser 3.

  On the other hand, as shown in FIG. 18B, when the maximum voltage value Vmax of the drive pulse PD is 17.8 [V], 22.0 [V], 26.0 [V], and 29.2 [V]. In the light intensity characteristics UT3, UT4, UT5, and UT6 of the laser beam LL, a peak portion that appears as a leading peak at a relatively early time and a slope portion that gradually attenuates with fine vibration after that were confirmed.

  In the light intensity characteristics UT3, UT4, UT5 and UT6, since a large peak does not appear after the head peak portion, the light intensity by the relaxation oscillation mode having the second wave and the third wave after the first wave. Compared with the characteristic WT2 (FIG. 18A), the tendency of the waveform is clearly different.

  Incidentally, since the resolution of the optical sample oscilloscope 16 of the light measuring device 11 is about 30 [ps] or more, it is not shown in FIG. 18 or the like. The half width was confirmed to be about 10 [ps].

  Thus, since the resolution in the optical sample oscilloscope 16 is low, there is a possibility that the light measuring device 11 cannot always measure the correct light intensity LT. In this case, the maximum light intensity at the head peak portion in FIG. 18 and the like appears lower than the actual value.

  Next, the laser beam LL when the maximum voltage value Vmax of the drive pulse PD is changed will be analyzed in more detail.

  Here, for the laser beam LL emitted from the semiconductor laser 3 when the maximum voltage value Vmax of the drive pulse PD is changed using the light measurement device 11, the light intensity characteristic UT and the wavelength characteristic UW are expressed as the optical sample oscilloscope 16. And the optical spectrum analyzer 17 respectively.

  19 to 23 show the results of this measurement, respectively. 19A to 23A show the wavelength characteristics UW of the laser light LL measured by the optical spectrum analyzer 17 (that is, the result of decomposition for each wavelength). FIGS. 19B to 23B show the light intensity characteristics UT of the laser light LL (that is, how the time changes) as measured by the optical sample oscilloscope 16, as in FIG. In this measurement, the BPF 13 is not installed.

  As shown in FIG. 19B, when the maximum voltage value Vmax of the drive pulse PD is 8.8 [V], only one peak is confirmed in the light intensity characteristic UT11 waveform of the laser light LL. From this, it can be said that the short pulse light source device 1 is operating in the normal mode at this time, and the laser light LL is the normal output light LN.

  Further, as shown in FIG. 19A, only one peak at a wavelength of about 404 [nm] was confirmed in the wavelength characteristic UW11 at this time. From this, it can be seen that the wavelength of the laser beam LL is about 404 [nm].

  As shown in FIG. 20B, when the maximum voltage value Vmax of the drive pulse PD is 13.2 [V], a plurality of relatively large peaks are confirmed in the light intensity characteristic UT12 of the laser light LL. From this, it can be said that the short pulse light source device 1 is operating in the relaxation oscillation mode at this time, and the laser light LL is the vibration output light LB.

  Further, as shown in FIG. 20A, two peaks at wavelengths of about 404 [nm] and about 407 [nm] were confirmed in the wavelength characteristic UW12 at this time. From this, it can be seen that the wavelengths of the laser light LL are about 404 [nm] and about 407 [nm].

  As shown in FIG. 21B, when the maximum voltage value Vmax of the drive pulse PD is 15.6 [V], the light intensity characteristic UT13 of the laser light LL has a leading peak portion and a slowly decaying slope portion. It was observed.

  At this time, as shown in FIG. 21A, two peaks were confirmed in the wavelength characteristic UW13 at about 404 [nm] and about 408 [nm]. In this wavelength characteristic UW13, it was confirmed that the peak of about 406 [nm] confirmed in the relaxation oscillation mode moved 2 [nm] toward the long wavelength side, and that the vicinity of 398 [nm] was slightly raised. It was.

  As shown in FIG. 22B, when the maximum voltage value Vmax of the drive pulse PD is 17.8 [V], the light intensity characteristic UT14 of the laser light LL has a leading peak portion and a slowly decaying slope portion. It was observed.

  Further, as shown in FIG. 22A, in the wavelength characteristic UW14 at this time, two large peaks were confirmed at about 398 [nm] and about 403 [nm]. In this wavelength characteristic UW14, the peak of about 408 [nm] is very small compared to the wavelength characteristic UW13 (FIG. 21A), and instead, a large peak is formed at about 398 [nm]. It was confirmed that

  As shown in FIG. 23B, when the maximum voltage value Vmax of the drive pulse PD is 38.4 [V], the light intensity characteristic UT15 of the laser beam LL has a leading peak portion and a gently decaying slope portion. It was clearly seen.

  Further, as shown in FIG. 23A, in the wavelength characteristic UW15 at this time, two peaks were confirmed at about 398 [nm] and about 404 [nm]. In this wavelength characteristic UW15, the peak of about 408 [nm] disappears completely and a clear peak is formed at about 398 [nm] as compared with the wavelength characteristic UW14 (FIG. 22A). It was confirmed.

  For these reasons, in the short pulse light source device 1, the drive pulse PD having a singular voltage VE (that is, the maximum voltage value Vmax) larger than the vibration voltage VB is supplied to the semiconductor laser 3. It was confirmed that laser beams LL having different waveforms and wavelengths can be output. Further, the emission start time τd of the laser beam LL did not coincide with the equation (3) derived from the rate equation described above.

  Here, attention is focused on the wavelength of the laser beam LL. The laser light LL changes from the normal output light LN (FIG. 19) to the vibration output light LB (FIG. 20) as the maximum voltage value Vmax increases, and further changes the wavelength of the vibration output light LB.

  Specifically, the vibration output light LB (FIG. 20) has a wavelength characteristic UW12 in addition to a peak having a wavelength substantially equal to that of the normal output light LN (within ± 2 [nm] from the wavelength of the normal output light LN). It has a peak on the long wavelength side of about 3 [nm] (within 3 ± 2 [nm]) from the normal output light LN.

  On the other hand, the laser beam LL shown in FIG. 23 has, in its wavelength characteristic UW15, in addition to a peak having a wavelength substantially equal to that of the normal output light LN (within ± 2 [nm] from the wavelength of the normal output light LN), It has a peak on the short wavelength side of about 6 [nm] (within 6 ± 2 [nm]) from the normal output light LN.

  Therefore, hereinafter, the laser light LL as shown in FIG. 23 is referred to as a singular output light LE, and an operation mode in which the short pulse light source device 1 outputs the singular output light LE from the semiconductor laser 3 is referred to as a singular mode.

[2-3-4. Wavelength of laser light in singular mode]
By the way, the wavelength characteristic UW14 (FIG. 22 (FIG. 22)) when the maximum voltage value Vmax is 17.8 [V] as opposed to the wavelength characteristic UW13 (FIG. 21 (A)) when the maximum voltage value Vmax is 15.6 [V]. When A)) is compared, the peak on the long wavelength side disappears and the peak on the short wavelength side appears instead.

  That is, the wavelength characteristic UW is such that, in the process in which the laser light LL changes from the vibration output light LB to the singular output light LE as the maximum voltage value Vmax increases, the peak on the long wavelength side gradually decreases, and instead the short wavelength side It can be seen that the peak of increases.

  Therefore, in the following, the laser light LL in which the peak area on the short wavelength side in the wavelength characteristic UW is equal to or greater than the peak area on the long wavelength side is referred to as the specific output light LE, and the peak area on the short wavelength side in the wavelength characteristic UW is on the long wavelength side. The laser light LL that is less than the peak area is defined as the vibration output light LB.

  Incidentally, when two peaks overlap as shown in FIG. 22, the wavelength on the short wavelength side of 6 [nm] from the wavelength of the normal output light LN is set as the central wavelength on the short wavelength side, and the central wavelength ± 3 [nm]. The area in the range is the area of the peak.

  Therefore, according to this definition, when the maximum voltage value Vmax is 15.6 [V] (FIG. 21), the laser light LL becomes the vibration output light LB, and when the maximum voltage value Vmax is 17.8 [V] (FIG. 22). ) Becomes the singular output light LE.

  Next, the short pulse light source device 1 was operated in the singular mode in the light measurement device 11, and the light intensity characteristic UT16 and the wavelength characteristic UW16 of the light beam LL (that is, the singular output light LE) were measured. Further, the light intensity characteristic UT17 and the wavelength characteristic UW17 were measured in the same manner in a state where the transmittance of the light beam LL at the wavelength 406 ± 5 [nm] was lowered by installing the BPF 13 in the light measuring device 11.

  FIG. 24 shows the light intensity characteristic UT16 and the light intensity characteristic UT17 in an overlapping manner. As can be seen from FIG. 24, the light intensity characteristic UT17 when the BPF 13 is installed has almost the same light intensity at the peak portion as compared to the light intensity characteristic UT16, whereas the light intensity characteristic at the slope portion is UT16. Decreased significantly.

  This is because the emission intensity is reduced by the BPF 13 because the wavelength of the slope portion is about 404 [nm], whereas the light intensity is increased depending on the BPF 13 because the wavelength of the peak portion is about 398 [nm]. It means that it did not decrease.

  FIGS. 25A and 25B show the wavelength characteristics UW16 and UW17, respectively. In FIG. 25, the wavelength characteristics UW16 and UW17 are normalized according to the maximum light intensity, and the light intensity on the vertical axis is a relative value.

  In the wavelength characteristic UW16 (FIG. 25A), the light intensity at the wavelength 404 [nm] is larger than the light intensity at the wavelength 398 [nm] so as to correspond to the slope portion having a large area in the light intensity characteristic UT16. It is getting bigger.

  On the other hand, in the wavelength characteristic UW17, the light intensity at the wavelength 404 [nm] and the light intensity at the wavelength 398 [nm] are almost the same with the decrease in the slope portion.

  Also from this, the specific output light LE has a wavelength of the specific slope ESL of about 404 [nm] and a wavelength of the specific peak EPK of about 398 [nm] in the light intensity characteristic UT shown in FIG. It was found that the wavelength of the part was shorter than the wavelength of the slope part.

  In other words, the wavelength of the peak portion in the light intensity characteristic UT of the specific output light LE is shifted to the short wavelength side by about 6 [nm] compared to the case of the normal output light LN. Incidentally, similar results were obtained even when other semiconductor lasers having different wavelengths of the normal output light LN were used in other experiments.

  Further, in the light measurement apparatus 11, when the specific output light LE was measured using SLD 3233 manufactured by Sony Corporation as the semiconductor laser 3, a light intensity characteristic UT20 as shown in FIG. 26 was obtained.

  At this time, the light intensity of the peak portion of the singular output light LE (hereinafter referred to as the singular peak EPK, and the light beam output at this time is referred to as the singular peak light LEP) is about 12 [W]. This light intensity of about 12 [W] can be said to be an extremely large value compared to the maximum light intensity (about 1 to 2 [W]) in the vibration output light LB. Incidentally, in FIG. 26, since the resolution of the optical sample oscilloscope 16 is low, this light intensity does not appear.

  Further, as a result of analysis by the streak camera (not shown), the light intensity characteristic UT of the singular output light LE has a peak width of about 10 [ps] at the singular peak EPK, and a peak width (about 30 [ ps]). Incidentally, in FIG. 26, since the resolution of the optical sample oscilloscope 16 is low, this peak width does not appear.

  On the other hand, the slope portion of the light intensity characteristic UT of the singular output light LE (hereinafter referred to as the singular slope ESL, and the light beam output at this time is referred to as the singular slope light LES) is a laser beam whose wavelength is in the normal mode. It was the same as the wavelength of LL, and the maximum light intensity was about 1-2 [W].

  As described above, the short pulse light source device 1 supplies the semiconductor laser 3 with the laser drive signal SD having the singular voltage VE higher than the oscillation voltage VB, so that the singular peak light LEP and the singular slope light are used as the singular output light LE. LES can be emitted sequentially.

[2-3-5. Movement of emission point in singular output light]
Next, the position of the emission point when the specific output light LE was output from the semiconductor laser 3 was investigated.

  FIG. 27A schematically shows an optical system 20 in which the semiconductor laser 3, the collimator lens 21, and the condenser lens 22 are combined. FIG. 27A shows a state in which the normal output light LN is output from the semiconductor laser 3 in the optical system 20. At this time, the normal output light LN has its emission point positioned on the emission end face 3A of the semiconductor laser 3, and its focal point is connected to the position QN.

  FIG. 27B corresponding to FIG. 27A shows a state where the specific slope light LES is output from the semiconductor laser in the optical system 20 by a broken line. At this time, the singular slope light LES has its emission point located on the emission end face 3A of the semiconductor laser 3 and its focal point tied to the position QN, as in the case of the normal output light LN.

  On the other hand, when the singular peak light LEP is output from the semiconductor laser in the optical system 20, as shown by the solid line in FIG. 27B, the focal point is connected to the position QP before the position QN. From this, it was found that the emission point of the singular peak light LEP is located at the point 3B inside the semiconductor laser 3.

  Here, when the NA of the collimator lens 21 is 0.161 and the NA of the condenser lens 22 is 0.837, the position QP where the focal point of the singular peak light LEP is formed is 0.37 [ [μm]. Based on this, when the emission point of the specific peak light LEP was calculated, the point 3B of the semiconductor laser 3 was located at a position of 10 [μm] from the emission end face 3A.

  As described above, when the singular output light LE is output, the semiconductor laser 3 uses the emission end face 3A as a light emitting point when the singular slope light LES is output, as in the normal output light LN. At the time of output, it was found that the light emitting point moves to the internal point 3B. Incidentally, this difference in emission point position is a difference in virtual emission point position including deviation of the emission point in an actual laser and chromatic aberration of the measurement optical system.

<3. Embodiment>
Next, embodiments will be described. In this embodiment, information is recorded on the optical disc 100 and information is recorded from the optical disc 100 based on the information recording / reproducing principle and the output principle of the light beam by the semiconductor laser described above by the optical disc apparatus 110 shown in FIG. It is made to play.

[3-1. Configuration of optical disc]
As shown in the sectional view of FIG. 29, the optical disc 100 is configured such that information is recorded by irradiating the optical disc device 110 with an information light beam LM corresponding to the laser beam LL. The optical disc 100 reflects the information light beam LM to obtain an information reflected light beam LMr, which is detected by the optical disc device 110 so that information is reproduced.

  Actually, the optical disc 100 is generally formed in a substantially disc shape, and has a configuration in which both surfaces of a recording layer 101 for recording information are sandwiched between substrates 102 and 103.

  The optical disc device 110 is configured to condense the information light beam LM emitted from the light source into the recording layer 101 of the optical disc 100 by the objective lens 118.

  The recording layer 101 contains a two-photon absorption material that absorbs two-photon light having a wavelength of about 404 [nm]. This two-photon absorption material is known to cause two-photon absorption in proportion to the square of the light intensity, and causes two-photon absorption only for light having a very high light intensity. As the two-photon absorption material, a hexadiyne compound, a cyanine dye, a merocyanine dye, an oxonol dye, a phthalocyanine dye, an azo dye, or the like can be used.

  When the recording layer 101 is irradiated with the information light beam LM having a relatively strong intensity, the recording layer 101 vaporizes, for example, a two-photon absorption material by two-photon absorption to form bubbles, and as a result, the focus FM A recording mark RM is recorded at the position.

  At this time, since the recording layer 101 is a two-photon absorption material, a reaction occurs in proportion to the square of the light intensity. That is, the recording layer 101 generates a reaction by absorbing only the information light beam LM having a very high intensity, for example, in the vicinity of the focal point collected by the lens, and is caused by the information light beam LM having a low intensity other than the focal point. Produces little reaction. Therefore, the recording layer 101 can keep the entire transmittance high.

  In the optical disc 100, a servo layer 104 is provided between the recording layer 101 and the substrate. A servo guide groove is formed in the servo layer 104. Specifically, a spiral track (hereinafter referred to as a servo track) is formed by lands and grooves similar to a general BD-R (Recordable) disk. TS) is formed.

  This servo track TS is assigned an address consisting of a series of numbers for each predetermined recording unit, and a servo track (hereinafter referred to as a servo track) to be irradiated with a servo light beam LS (described later) when information is recorded or reproduced. , This is called the target servo track TSG) by the address.

  The servo layer 104 has so-called wavelength selectivity. For example, the servo layer 104 reflects a red light beam having a wavelength of about 660 [nm] with high reflectivity, and highly transmits a blue-violet light beam having a wavelength of about 404 [nm]. It is designed to be transparent at a rate.

  The optical disc device 110 irradiates the optical disc 100 with a servo light beam LS having a wavelength of about 660 [nm]. At this time, the servo light beam LS is reflected by the servo layer 104 of the optical disc 100 to become a servo reflected light beam LSr.

  The optical disk device 110 receives the servo reflected light beam LSr, and controls the position of the objective lens 118 in the focus direction in which the objective lens 118 approaches or separates from the optical disk 100 based on the light reception result, thereby changing the focus FS of the servo light beam LS to the servo layer. 104.

  Further, the optical disk device 110 makes the optical axes XL of the servo light beam LS and the information light beam LM substantially coincide with each other. As a result, the optical disc apparatus 110 positions the focal point FM of the information light beam LM at a position corresponding to the target servo track TSG in the recording layer 101, that is, on a normal line passing through the target servo track TSG and perpendicular to the servo layer 104.

  As a result, a recording mark RM is formed on the optical disc 100 at a target position on the normal line passing through the target servo track TSG in the recording layer 101 (hereinafter referred to as a target position QG).

  The recording mark RM formed in this way is arranged in a plane substantially parallel to each surface such as the irradiation surface 100A of the optical disc 100 and the servo layer 104, and forms a mark layer Y by the recording mark RM.

  On the other hand, when reproducing information from the optical disc 100, the optical disc device 110 focuses the information light beam LM on the target position QG from the irradiation surface 100A side, for example. Here, when the recording mark RM is formed at the position of the focus FM (that is, the target position QG), the information light beam LM is reflected by the recording mark RM to become the information reflected light beam LMr.

  The optical disc device 110 detects the information reflected light beam LMr, generates a detection signal corresponding to the detection result, and detects whether or not the recording mark RM is formed based on the detection signal.

  As described above, when information is recorded or reproduced by the optical disk device 110, the optical disk 100 is configured to irradiate the target position QG with the information light beam LM while using the servo light beam LS together with the optical disk device 110. .

[3-2. Configuration of optical disc apparatus]
Next, a specific configuration of the optical disc apparatus 110 will be described. As shown in FIG. 28, the optical disc apparatus 110 is configured with a control unit 111 as a center. The control unit 111 includes a CPU (Central Processing Unit) (not shown), a ROM (Read Only Memory) storing various programs, and a RAM (Random Access Memory) used as a work area of the CPU. Yes.

  When recording information on the optical disc 100, the control unit 111 rotates the spindle motor 115 via the drive control unit 112 to rotate the optical disc 100 placed on a turntable (not shown) at a desired speed. .

  In addition, the control unit 111 drives the sled motor 116 via the drive control unit 112, thereby causing the optical pickup 117 to follow the movement axis G1 and G2 in the tracking direction, that is, the direction toward the inner or outer peripheral side of the optical disc 100. It is made to move greatly to.

  The optical pickup 117 incorporates a plurality of optical components such as the objective lens 118, the short pulse light source unit 120, and the like. Based on the control of the control unit 111, the information light beam LM and the servo light beam LS (see FIG. 29). ).

  The optical pickup 117 detects a servo reflected light beam LSr obtained by reflecting the servo light beam LS by the optical disc 100, generates a plurality of detection signals based on the detection result, and supplies these signals to the signal processing unit 113. .

  The signal processing unit 113 generates a focus error signal SFE and a tracking error signal STE by performing predetermined calculation processing using the detection signal, and supplies them to the drive control unit 112.

  Incidentally, the focus error signal SFE is a signal representing the shift amount of the servo light beam LS with respect to the servo layer 104 in the focus direction. The tracking error signal STE is a signal representing the amount of deviation in the tracking direction with respect to the target servo track TS (that is, the target servo track TSG) of the servo light beam LS.

  The drive control unit 112 generates a focus drive signal and a tracking drive signal for driving the objective lens 118 based on the focus error signal SFE and the tracking error signal STE, and supplies them to the biaxial actuator 119 of the optical pickup 117. To do.

  The biaxial actuator 119 of the optical pickup 117 moves the objective lens 118 in the focus direction and the tracking direction based on the focus drive signal and the tracking drive signal (hereinafter referred to as focus control and tracking control, respectively).

  The drive control unit 112 performs the focus control and the tracking control, so that the focus FS of the servo light beam LS collected by the objective lens 118 becomes a target mark layer Y (hereinafter, referred to as a target mark layer YG). ) To follow the target servo track TSG.

  At this time, the control unit 111 supplies recording information supplied from the outside to the signal processing unit 113. The signal processing unit 113 performs predetermined modulation processing or the like on the recording information to generate recording data, and supplies the recording data to the laser control unit 2.

  The laser controller 2 emits the information light beam LM composed of the specific output light LE based on the recording data, thereby forming the recording mark RM at the target position QG of the target mark layer YG. Thus, the optical disk device 110 can record information on the optical disk 100.

  Further, when reproducing information from the optical disc 100, the optical pickup 117 causes the focus FS of the servo light beam LS to follow the target servo track TSG in the same manner as at the time of recording, and the information light beam LM having a relatively low light intensity is used as the target mark. The target position QG of the layer YG is irradiated.

  At this time, the information light beam LM is reflected at a portion where the recording mark RM is formed, and becomes an information reflected light beam LMr. The optical pickup 117 detects the information reflected light beam LMr, generates a detection signal based on the detection result, and supplies the detection signal to the signal processing unit 113.

  The signal processing unit 113 restores information recorded as the recording mark RM at the target position QG of the target mark layer YG by performing predetermined demodulation processing and decoding processing on the detection signal. Thus, the optical disc apparatus 110 can reproduce information from the target position QG on the optical disc 100.

  As described above, the optical disc apparatus 110 emits the servo light beam LS and the information light beam LM from the optical pickup 117, and detects the servo reflected light beam LSr and the information reflected light beam LMr. As a result, the optical disc device 110 is configured to record and reproduce information with respect to the optical disc 100.

[3-3. Configuration of optical pickup]
Next, the configuration of the optical pickup 117 will be described. As shown in FIG. 30, the optical pickup 117 includes a laser control unit 2, a servo optical system 130 that mainly performs servo control of the objective lens 118, and an information optical system 150 that mainly reproduces or records information. Have.

  The optical pickup 117 causes the servo light beam LS emitted from the laser diode 131 and the information light beam LM emitted from the semiconductor laser 3 to enter the same objective lens 118 via the servo optical system 130 and the information optical system 150, respectively. The optical disc 100 is irradiated with each.

  The laser control unit 2 generates a laser drive signal SD including the drive pulse PG and supplies it to the semiconductor laser 3.

[3-3-1. Optical path of servo light beam]
As shown in FIG. 31 corresponding to FIG. 30, the servo optical system 130 irradiates the optical disk 100 with the servo light beam LS via the objective lens 118 and generates the servo reflected light beam LSr reflected by the optical disk 100. The photodetector 143 receives light.

  That is, the laser diode 131 emits a servo light beam LS composed of divergent light having a wavelength of about 660 [nm] and makes it incident on the collimator lens 133 based on the control of the control unit 111 (FIG. 28). The collimator lens 133 converts the servo light beam LS from diverging light into parallel light and makes it incident on the polarization beam splitter 134.

  The polarization beam splitter 134 has different reflectance and transmittance depending on the polarization direction of the light beam, and transmits almost all of the servo light beam LS composed of P-polarized light and makes it incident on the quarter-wave plate 136.

  The quarter-wave plate 136 converts the servo light beam LS composed of P-polarized light (that is, linearly polarized light) into circularly-polarized light (for example, right-handed circularly polarized light) and makes it incident on the dichroic prism 137.

  In the dichroic prism 137, the reflection / transmission surface 137S has different reflectivities according to the wavelength of the light beam, and reflects the light beam with a wavelength of about 660 [nm] and transmits the light beam with a wavelength of about 404 [nm]. It is made to let you.

  Actually, the dichroic prism 137 reflects the servo light beam LS by the reflection / transmission surface 137S and makes it incident on the objective lens 118.

  The objective lens 118 condenses the servo light beam LS and irradiates the servo layer 104 from the irradiation surface 100 </ b> A side of the optical disc 100. At this time, as shown in FIG. 29, the servo light beam LS is transmitted through the substrate 102 and reflected by the servo layer 104, thereby becoming a servo reflected light beam LSr directed in the opposite direction to the servo light beam LS. The servo reflected light beam LSr has a rotating direction in circularly polarized light that is reversed from the servo light beam LS.

  Thereafter, the servo reflected light beam LSr is converted into parallel light by the objective lens 118 and then incident on the dichroic prism 137. The dichroic prism 137 reflects the servo reflected light beam LSr and makes it incident on the quarter-wave plate 136.

  The quarter-wave plate 136 converts the servo reflected light beam LSr made of circularly polarized light into S-polarized light (that is, linearly polarized light) and makes it incident on the polarizing beam splitter 134. The polarization beam splitter 134 reflects the servo reflected light beam LSr made of S-polarized light by the reflection / transmission surface 134S and makes it incident on the condensing lens 141.

  The condenser lens 141 converges the servo reflected light beam LSr and irradiates the photodetector 143 with astigmatism by the cylindrical lens 42.

  The photodetector 143 has a plurality of light receiving areas, generates detection signals corresponding to the light amount of the servo reflected light beam LSr in each light receiving area, and sends them to the signal processing unit 113 (FIG. 28).

  Incidentally, in the servo optical system 130, the focused state when the servo light beam LS is condensed by the objective lens 118 and applied to the servo layer 104 of the optical disc 100 is focused on the servo reflected light beam LSr by the condensing lens 141. The optical positions of various optical components are adjusted so as to be reflected in the in-focus state when the photo detector 143 is irradiated.

  The signal processing unit 113 calculates a focus error signal SFE indicating the amount of deviation between the focus FS of the servo light beam LS and the servo layer 104 of the optical disc 100 based on the so-called astigmatism method, and supplies this to the drive control unit 112. To do.

  Further, the signal processing unit 113 calculates a tracking error signal STE indicating the amount of deviation between the focal point FS and the target servo track TSG in the servo layer 104 of the optical disc 100 based on a so-called push-pull method, and supplies this to the drive control unit 112. To do.

  The drive control unit 112 generates a focus drive signal based on the focus error signal SFE and supplies the focus drive signal to the biaxial actuator 119. Thus, the drive control unit 112 performs feedback control (that is, focus control) on the objective lens 118 so that the servo light beam LS is focused on the servo layer 104 of the optical disc 100.

  Further, the drive control unit 112 generates a tracking drive signal based on the tracking error signal STE and supplies the tracking drive signal to the biaxial actuator 119. Thus, the drive control unit 112 performs feedback control (that is, tracking control) on the objective lens 118 so that the servo light beam LS is focused on the target servo track TSG in the servo layer 104 of the optical disc 100.

  As described above, the servo optical system 130 irradiates the servo layer 104 of the optical disc 100 with the servo light beam LS and supplies the light reception result of the servo reflected light beam LSr, which is the reflected light, to the signal processing unit 113. . In response to this, the drive control unit 112 performs focus control and tracking control of the objective lens 118 so that the servo light beam LS is focused on the target servo track TSG of the servo layer 104.

[3-3-2. Information light beam path]
On the other hand, as shown in FIG. 32 corresponding to FIG. 30, the information optical system 150 emits the information light beam LM from the semiconductor laser 3 and condenses it on the optical disc 100 by the objective lens 118. At the same time, the information optical system 150 receives an information reflected light beam LMr formed by reflecting the information light beam LM by the optical disc 100.

  That is, the semiconductor laser 3 emits the information light beam LM made of divergent light and makes it incident on the collimator lens 152 based on the laser drive signal SD supplied from the laser controller 2.

  The collimator lens 152 converts the information light beam LM from divergent light to parallel light and makes it incident on the polarization beam splitter 154. Incidentally, the collimator lens 152 also has a function of correcting the aberration of the information light beam LM.

  The polarization beam splitter 154 is configured to transmit the light beam made of P-polarized light and reflect the light beam made of S-polarized light on the reflection / transmission surface 154S, similarly to the reflection / transmission surface 134S. Actually, the polarization beam splitter 154 transmits the information light beam LM having P polarization on the reflection / transmission surface 154S, and further enters the quarter wavelength plate 157 via an LCP (Liquid Crystal Panel) 156 that corrects spherical aberration and the like. Let

  The quarter-wave plate 157 converts the information light beam LM from P-polarized light (that is, linearly polarized light) to circularly-polarized light (for example, left circularly-polarized light) and makes it incident on the relay lens 158.

  The relay lens 158 includes a movable lens 158A that can move in the optical axis direction of the information light beam LM and a fixed lens 158B that is fixed.

  In practice, the relay lens 158 converts the information light beam LM from parallel light into convergent light by the movable lens 158A, converts the information light beam LM that has become divergent light after convergence into the converged light again by the fixed lens 158B, The light enters the mirror 159.

  The mirror 159 changes the traveling direction by reflecting the information light beam LM, and makes it incident on the dichroic prism 137 through the correction lens 162 (described later in detail). The dichroic prism 137 transmits the information light beam LM having a wavelength of about 404 [nm] on the reflection / transmission surface 137S and makes it incident on the objective lens 118.

  The objective lens 118 collects the information light beam LM and irradiates the optical disc 100 with it. At this time, the information light beam LM is transmitted through the substrate 102 and focused in the recording layer 101 as shown in FIG.

  Here, the position of the focal point FM of the information light beam LM is determined by the convergence state when the information light beam LM is emitted from the fixed lens 158B of the relay lens 158. That is, the focus FM moves in the focus direction in the recording layer 101 according to the position of the movable lens 158A.

  In practice, the information optical system 150 is configured such that the position of the movable lens 158A is controlled by the control unit 111 (FIG. 28). Accordingly, the information optical system 150 adjusts the depth ZM (that is, the distance from the servo layer 104) of the focal point FM (FIG. 29) of the information light beam LM in the recording layer 101 of the optical disc 100, and the focal point FM at the target position QG. Are made to match.

  At this time, the information light beam LM is condensed at the target position QG by the objective lens 118, thereby forming a recording mark RM at the target position QG.

  On the other hand, when the recording mark RM is recorded at the target position QG during the reproduction process for reading the information recorded on the optical disc 100, the information light beam LM focused on the focal point FM is recorded. It is reflected by the mark RM to become an information reflected light beam LMr.

  At this time, the information reflected light beam LMr travels in the opposite direction to the information light beam LM and enters the objective lens 118. Further, the information reflected light beam LMr has the turning direction in the circular deflection reversed from the information light beam LM.

  Incidentally, almost all of the information light beam LM is transmitted through the optical disc 100 when the recording mark RM is not recorded at the target position QG. For this reason, the information reflected light beam LMr described above is hardly generated.

  The objective lens 118 converges the information reflected light beam LMr to some extent and makes it incident on the relay lens 158 via the dichroic prism 137, the correction lens 162, and the mirror 159 in order.

  The relay lens 158 converts the information reflected light beam LMr into parallel light and makes it incident on the quarter-wave plate 157. The quarter-wave plate 157 converts the information reflected light beam LMr made of circularly polarized light into S-polarized light (that is, linearly polarized light) and makes it incident on the polarizing beam splitter 154 via the LCP 156.

  The polarization beam splitter 154 reflects the information-reflected light beam LMr made of S-polarized light by the reflection / transmission surface 154 </ b> S and makes it incident on the multi-lens 165. The multi lens 165 collects the information reflected light beam LMr and irradiates the photodetector 167 via the pinhole plate 166.

  The pinhole plate 166 is disposed so that the focal point of the information reflected light beam LMr collected by the multi-lens 165 is located in the hole 166H, and passes the information reflected light beam LMr as it is. On the other hand, the pinhole plate 166 blocks light whose focal point is not formed in the hole 166H, that is, light reflected at a location other than the target position QG in the optical disc 100 (so-called stray light).

  As a result, the photodetector 167 generates a reproduction detection signal corresponding to the light quantity of the information reflected light beam LMr without being affected by stray light, and supplies this to the signal processing unit 113 (FIG. 28).

  The signal processing unit 113 generates reproduction information by performing predetermined demodulation processing, decoding processing, and the like on the reproduction detection signal, and supplies the reproduction information to the control unit 111.

  As described above, the information optical system 150 emits the information light beam LM from the semiconductor laser 3 based on the laser drive signal SD from the laser controller 122 and irradiates the optical disc 100 with it. The information optical system 150 receives the information reflected light beam LMr from the optical disc 100 and supplies the light reception result to the signal processing unit 113.

[3-4. Recording mark formation position]
Next, the position where the recording mark RM is formed in the recording layer 101 of the optical disc 100 will be described.

[3-4-1. Formation of recording marks in virtual optical system]
First, in order to compare with the information optical system 150 in the optical pickup 117, a virtual optical system 150V corresponding to the information optical system 150 is assumed.

  As shown in FIG. 33, the virtual optical system 150V includes a semiconductor laser 3, a collimator lens 152, and an objective lens 118, and emits an information light beam LM composed of specific output light LE from the semiconductor laser 3. Has been made. Incidentally, the NAs of the collimator lens 152 and the objective lens 118 are 0.161 and 0.837, respectively, as in the case of the optical system 20 (FIG. 27B).

  When the semiconductor laser 3 emits the singular output light LE, as shown in FIG. 26, the semiconductor laser 3 first emits the singular peak light LEP having the wavelength 398 [nm], and then the singular slope light having the wavelength 404 [nm]. LES is emitted.

  Here, when the semiconductor laser 3 first emits the singular peak light LEP, as in the case of the optical system 20 (FIG. 27B), the emission point is from the emission end face 3A, which is the emission point in the singular slope light LES. This is a location moved about 10 [μm] to the inside.

  Accordingly, the focal point FMP of the singular peak light LEP is about 0.3 [μm] before the target position QG where the information light beam LM should be focused, as in the case shown in FIG. To position. Here, for convenience of explanation, the depth of the target position QG (that is, the distance from the servo layer 104) is the depth ZG, and the depth of the focal point FMP is the depth ZP.

  At this time, in the recording layer 101 of the optical disc 100, as shown in FIG. 34A, a two-photon absorption reaction occurs in the vicinity of the focal point FMP of the singular peak light LEP, so that the light absorption of the material constituting the recording layer 101 is absorbed. By changing, an absorption change region RA is formed.

  Since the absorption change region RA is colored by the two-photon absorption reaction, the transmittance of the light beam is lower than the surrounding area.

  On the other hand, when the semiconductor laser 3 emits the singular slope light LES following the singular peak light LEP, its emission point is set as the emission end face 3A as in the case of the optical system 20 (FIG. 27B).

  At this time, in the recording layer 101, as shown in FIG. 34A, the focal point FMS of the specific slope light LES is about 0.3 [μm from the target position QG having the depth ZG, that is, the center of the absorption change region RA. ] Located far away.

  Further, since the absorption change region RA is colored by the two-photon absorption reaction, the transmittance of the specific slope light LES is reduced. For this reason, the energy of the specific slope light LES is concentrated not in the region centered on the focal point FMS but in a region (hereinafter referred to as an energy concentration region RE) that is biased toward the incident surface 100A side in the absorption change region RA.

  At this time, in the recording layer 101, a recording mark RM is formed around a portion where the absorption change region RA and the energy concentration region RE overlap. As a result, the recording mark RM is formed at a position biased toward the incident surface 100A side with respect to the target position QG and the focal point FMP of the specific peak light LEP.

  As described above, in the virtual optical system 150V, the specific peak light LEP and the specific slope light LES are sequentially emitted from the semiconductor laser 3 as the information light beam LM. As a result, the recording mark RM is located at a position greatly deviated from the target position QG toward the incident surface 100A. Will be formed.

[3-4-2. Correction of recording mark formation position by correction lens]
Therefore, the information optical system 150 corrects the formation position of the recording mark RM by the correction lens 162.

  FIG. 35 shows some components in the information optical system 150, and the information light beam LM emitted from the semiconductor laser 3 is irradiated onto the optical disc 100 sequentially through the collimator lens 152, the correction lens 162, and the objective lens 118. Is schematically shown.

  That is, the information optical system 150 shown in FIG. 33 has a configuration in which a correction lens 162 is added to the virtual optical system 150V.

  As shown in FIG. 36, in the correction lens 162, a convex lens portion 162A having a convex lens shape and a concave lens portion 162B having a concave lens shape are joined at a joint surface 162S.

  In the convex lens portion 162A, the incident surface 162AJ on which the information light beam LM is incident is configured with a curved surface having a relatively large radius of curvature, and the exit surface 162AK that emits the information light beam LM is a curved surface with a relatively small radius of curvature. It is configured.

  The convex lens portion 162A is made of a predetermined glass material M1. This glass material M1 has a refractive index N1 (405) at a wavelength of 405 [nm] of 1.780 and a dispersion νd1 of 53.3.

  In the concave lens portion 162B, the incident surface 162BJ on which the information light beam LM is incident is configured with a curved surface substantially equivalent to the exit surface 162AK of the convex lens portion 162A, and the output surface 162BK that emits the information light beam LM is configured with a plane. Has been.

  The concave lens portion 162B is made of a glass material M2 having optical characteristics different from those of the convex lens portion 162A. This glass material M2 has a refractive index N2 (405) at a wavelength of 405 [nm] of 1.789 and a dispersion νd2 of 53.3. That is, the glass material M2 has a refractive index N substantially equal to that of the wavelength 405 [nm] as compared with the glass material M1, but the dispersion νd is greatly different.

  Here, the relationship between the wavelength of light and the refractive index in the glass material M1 and the glass material M2 is shown as characteristic curves UN1 and UN2 in FIG. As can be seen from the difference in dispersion νd between the glass material M1 and the glass material M2 and the difference in the characteristic curves UN1 and UN2, the change in the refractive index of each other when the wavelength of light changes. The degree of is different.

  This correction lens 162 (FIG. 36) has substantially the same refractive index N for the glass material M1 of the convex lens portion 162A and the glass material M2 of the concave lens portion 162B with respect to the light beam having a wavelength of 405 [nm]. For this reason, when the light beam having a wavelength of 405 [nm] is incident, the correction lens 162 transmits the light beam through the cemented surface 162S with almost no refraction.

  On the other hand, the correction lens 162 has a refractive index N different between the glass material M1 of the convex lens portion 162A and the glass material M2 of the concave lens portion 162B with respect to a light beam having a wavelength other than the wavelength 405 [nm]. Therefore, when a light beam having a wavelength other than 405 [nm] is incident, the correction lens 162 refracts the light beam at the joint surface 162S and causes the joint surface 162S to act as a lens.

  That is, the correction lens 162 transmits the singular slope light LES having a wavelength of 404 [nm] with almost no effect, and causes the cemented surface 162S to act as a concave lens for the singular peak light LEP having a wavelength of 398 [nm]. Convert to expand the divergence angle.

  As a result, the correction lens 162 can move the focal point FMP of the singular peak light LEP away from the incident surface 100A on which the singular slope light LES is incident, as compared with the virtual optical system 150V in which the correction lens 162 is not provided. it can.

  When the focal point FMP is moved about 0.3 [μm] away from the incident surface 100A side as compared with the virtual optical system 150V (FIG. 34A), the focal point FMS of the specific slope light LES is positioned. The target position QG (that is, the depth ZG) can be adjusted. In this case, the information optical system 150 can form the absorption change region RA with the target position QG as the center, as shown in FIG. 34 (B) corresponding to FIG. 34 (A).

  However, even in this case, in the recording layer 101, the energy concentration region RE is formed biased toward the incident surface 100A side in the colored absorption change region RA. For this reason, as shown in FIG. 34B, the recording mark RM is still formed at a position shifted from the target position QG toward the incident surface 100A.

  For this reason, the correction lens 162 is configured to move the focal point FMP farther than the target position QG (that is, the depth ZG) from the incident surface 100A side.

  Here, in the virtual optical system 150V (FIG. 33) and the information optical system 150 (FIG. 35), the relationship between the wavelength of the information light beam LM and the depth ZM of the focus FM is shown as characteristic curves UF1 and UF3 in FIG. Show.

  Incidentally, FIG. 38 shows the relative position of the focus FM (that is, the depth ZM) on the vertical axis with the depth ZG of the target position QG as a reference position. FIG. 38 shows the position of the focus FM when the emission point of the information light beam LM is unified with the emission end face 3A (FIG. 27) of the semiconductor laser 3.

  As can be seen from the characteristic curve UF1, in the case of the virtual optical system 150V, since the correction lens 162 is not provided, the depth ZM of the focal point FM does not change regardless of the wavelength of the information light beam LM.

  On the other hand, as can be seen from the characteristic curve UF3, in the case of the information optical system 150, due to the presence of the correction lens 162, the depth of the focus FM changes according to the wavelength of the information light beam LM.

  In particular, the information optical system 150 positions the focus FM at a depth ZG equivalent to the reference position QG near the wavelength 405 [nm], but moves the focus FM to about 0.6 [μm] far away near the wavelength 398 [nm]. Can be moved. This depth of about 0.6 [μm] is a value set to be larger than 0.3 [μm] which is the distance between the position QN and the position QP in FIG.

  Incidentally, the correction lens 162 has a thickness HA of 1.3 [mm] at the optical axis portion of the convex lens portion 162A and a thickness HB at the optical axis portion of the concave lens portion 162B of 0.8 [mm] based on the optical design. . In the correction lens 162, the radius of curvature R1 of the incident surface 162AJ is 92.178 [mm], and the radius of curvature R2 of the exit surface 162AK and the incident surface 162BJ is 4.147 [mm].

  As a result, as shown in FIG. 34C corresponding to FIG. 34B, the information optical system 150 sees the focal point FMP in the singular peak light LEP from the incident surface 100A side, and the focal point FMS in the singular slope light LES. Can be located farther away than the target position QG where is located.

  As a result, in the recording layer 101 of the optical disc 100, a two-photon absorption reaction due to the specific peak light LEP occurs around the focal point FMP located far from the target position QG, and an absorption change region RA is formed.

  At this time, the absorption change region RA is formed in a range in which the center is far from the target position QG and the portion on the incident surface 100A side includes the target position QG. The absorption change region RA is colored by a two-photon absorption reaction.

  Further, the recording layer 101 is irradiated with the specific slope light LES from the incident surface 100A side, whereby an energy concentration region RE is formed in the portion on the incident surface 100A side in the absorption change region RA, that is, the portion centered on the target position QG. Is done. As a result, a recording mark RM is formed on the recording layer 101 around the target position QG.

  Incidentally, FIG. 38 shows a characteristic curve when the focus FM of the information light beam LM having a wavelength of 398 [nm] is moved by about 0.3 [μm] farther than the wavelength 404 [nm] by the correction lens 162. UF2 is also shown.

  In this case, as the design of the correction lens 162, for example, the curvature radius R1 of the incident surface 162AJ is 162.238 [mm], and the curvature radii R2 of the exit surface 162AK and the incident surface 162BJ are both 7.240 [mm]. it can.

  As described above, the information optical system 150 transmits the singular slope light LES and refracts the singular peak light LEP by the correction lens 162. Accordingly, the information optical system 150 changes the depth ZP of the focal point FMP in the singular peak light LEP while fixing the focal point FMS of the singular slope light LES at the target position QG, and makes the focal point FMP the same target as the focal point FMS. It can be located farther than the position QG.

[3-5. Operation and effect]
In the above configuration, the information optical system 150 of the optical disc apparatus 110 sequentially outputs the singular peak light LEP and the singular slope light LES of the singular output light LE as the information light beam LM from the semiconductor laser 3.

  At this time, the reporting optical system 150 sequentially irradiates the recording layer 101 of the optical disc 100 with the specific peak light LEP and the specific slope light LES via the collimator lens 152, the correction lens 162, and the objective lens 118 in order.

  The correction lens 162 changes its divergence angle by acting as a concave lens with respect to the singular peak light LEP having a wavelength of 398 [nm], while transmitting the singular slope light LEP as it is (FIG. 35).

  The objective lens 118 focuses the singular peak light LEP and the singular slope light LES, respectively, thereby forming the focal points FMP and FMS in the recording layer 101 of the optical disc 100, respectively.

  At this time, since the information optical system 150 changes the divergence angle of the singular peak light LEP, the focal point FMP of the singular peak light LEP is positioned farther than the focal point FMS of the singular slope light when viewed from the incident surface 100A side. Can be made.

  Accordingly, the information optical system 150 can form the absorption change region RA in the recording layer 101 at a position biased farther than the target position QG. Therefore, in the recording layer 101, when the specific slope light LES is irradiated from the incident surface 100A side, an energy concentration region RE is formed in a portion of the absorption change region RA that is biased toward the incident surface 100A side.

  As a result, unlike the virtual optical system 150V in which the correction lens 162 is not provided (FIG. 34A), the information optical system 150 is centered on the position where the recording mark RM should be formed, that is, the target position QG. Can be formed in position.

  As a result, the information optical system 150 can improve the recording accuracy of information on the recording layer 101 of the optical disc 100.

  As a result, the information optical system 150 should originally record the formation position of the new recording mark RM by accumulating errors when, for example, the formation position of the new recording mark RM is determined based on the existing recording mark RM. It is possible to prevent a significant difference from the position.

  By the way, the singular output light LE switches from the singular peak light LEP to the singular slope light LES as time passes. For this reason, in the information optical system 150, a method of moving the correction lens in the optical path of the information light beam LM in accordance with the switching timing can be considered.

  However, since the singular output light LE switches from the singular slope light LES to the singular peak light LEP in a very short time of several tens [ps], it is generally difficult to perform a mechanical operation at a very high speed in accordance with the switching timing. It can be said.

  On the other hand, the information optical system 150 uses the optical characteristics of the correction lens 162 and does not need to be accompanied by a mechanical operation. Therefore, the singular peak light LEP stably and hardly affects the singular slope light LES. The divergence angle can be changed.

  The correction lens 162 does not act on the singular slope light LES having the same wavelength 404 [nm] as the normal output light LN, but changes the divergence angle of the singular peak light LEP having the wavelength 398 [nm]. .

  For this reason, the correction lens 162 hardly affects the normal output light LN. Therefore, in the information optical system 150, when reproducing information from the optical disc 100, the information light beam LM composed of the normal output light LN or the vibration output light LB is focused on the target position QG without being affected by the correction lens 162. be able to.

  According to the above configuration, the information optical system 150 of the optical disc apparatus 110 sequentially outputs the singular peak light LEP and the singular slope light LES as the information light beam LM from the semiconductor laser 3, and the correction lens 162 diverges the singular peak light LEP. Change the corner. Thereby, the information optical system 150 can position the absorption change region RA due to the specific peak light LEP in the recording layer 101 far away. As a result, the information optical system 150 can form the energy concentration region RE by the specific slope light LES in the vicinity of the target position QG, so that the information recording accuracy with respect to the optical disc 100 can be improved.

<4. Other embodiments>
In the above-described embodiment, the case where the divergence angle of the singular peak light LEP is changed by the correction lens 162 while the divergence angle of the singular slope light LES is not changed has been described.

  However, the present invention is not limited to this, and the divergence angle of the singular slope light LES may be changed by the correction lens 162 while the divergence angle of the singular peak light LEP may not be changed. In this case, the depth Z of the focal point FMS in the singular slope light LES can be matched with the depth ZP of the focal point FMP in the singular peak light LEP. Furthermore, the divergence angles of the specific peak light LEP and the specific slope light LES may be changed by the correction lens 162.

  In the above-described embodiment, the case where the correction lens 162 in which the convex lens-shaped convex lens portion 162A and the concave lens-shaped concave lens portion 162B are joined at the joint surface 162S has been described.

  However, the present invention is not limited to this, and a correction lens in which other various lenses are combined may be used. In this case, as the correction lens, since the dispersion of the constituent lenses is different from each other, the correction lens as a whole has a refractive index at a wavelength 398 [nm] of the singular peak light LEP and a wavelength 404 [nm] of the singular slope light LES. It suffices if the refractive index at is different.

  Further, in the above-described embodiment, the case where the convex lens portion 162A is made of the glass material M1 and the concave lens portion 162B is made of the glass material M2 has been described.

  However, the present invention is not limited to this, and the convex lens portion 162A and the concave lens portion 162B may be made of any glass material or resin material, respectively. In this case, if the refractive index at the wavelength 404 [nm] of the singular slope light LES is approximately equal and the refractive index at the wavelength 398 [nm] of the singular peak light LEP is different between the convex lens portion 162A and the concave lens portion 162B. good.

  Furthermore, in the above-described embodiment, the case where the divergence angle of the singular peak light LEP is changed by the correction lens 162 while the singular slope light LES is transmitted as it is has been described.

  However, the present invention is not limited to this. For example, the divergence angle of the specific peak light LEP is changed by various optical elements such as holograms, diffraction gratings, or the like, and the specific slope light LES is transmitted as it is. Also good.

  Further, in the above-described embodiment, the case where the focal point FMP of the singular peak light LEP having the wavelength of 398 [nm] is positioned 0.6 [μm] far away by the correction lens 162 has been described.

  However, the present invention is not limited to this, and the movement width of the focal point FMP may be an arbitrary value depending on the size in the depth direction of the recording mark RM, the size of the energy concentration region RE, and the like. The region RE may be formed around the target position QG.

  Further, in the above-described embodiment, the emission point of the singular slope light is located on the emission end face 3A (FIG. 27B) of the semiconductor laser 3, and the emission point of the singular peak light is about 10 [μm from the emission end face 3A. The case where it is located at the internal point 3B has been described.

  However, the present invention is not limited to this, and may be applied to the case where the emission point of the specific peak light LEP is located at a place other than the point 3B. In this case, the emission point of the specific peak light LEP may be either inside or outside the semiconductor laser 3. The emission point of the singular peak light LEP is preferably on the optical axis of the singular slope light LES, but may be off the optical axis. In this case, since the optical axes of the singular peak light LEP and the singular slope light LES are different, for example, a prism may be used to align both optical axes.

  Furthermore, in the above-described embodiment, in the recording layer 101, a two-photon absorption reaction is caused by the singular peak light LEP to form the absorption change region RA, and the energy concentration region RE of the singular slope light LES and the absorption change region RA. The case where the recording mark RM is formed by causing a thermal reaction in the overlapping range with the above has been described.

  However, the present invention is not limited to this, and an arbitrary first reaction is caused by the specific peak light LEP, and the arbitrary first in the overlapping range between the energy concentration region RE of the specific slope light LES and the region where the first reaction has occurred. The recording mark RM may be formed by causing the reaction 2. In this case, the recording layer 101 is made of a material that causes the first reaction by the specific peak light LEP and irradiates the portion where the first reaction has occurred with the specific slope light to generate the second reaction. It only has to be done.

  Further, in the above-described embodiment, the case where the wavelength of the light beam LL (information light beam LM) emitted from the semiconductor laser 3 is set to 404 [nm] has been described. However, the present invention is not limited to this, and the light beam LL may have other wavelengths. In this case, it is only necessary that the recording mark RM can be appropriately formed in the vicinity of the target position QG in the recording layer 101 by appropriately selecting the constituent material of the recording layer 101 in the optical disc 100. For example, considering the relationship between the wavelength and the beam diameter at the time of condensing, it is conceivable that the wavelength is in the range of 390 to 460 [nm].

  Further, in the above-described embodiment, the case where the rectangular pulse current is supplied from the laser control unit 2 to the semiconductor laser 3 has been described. However, the present invention is not limited to this, and in short, a pulse current having a large oscillating voltage VB may be supplied to the semiconductor laser 3 for a short time. For example, a drive pulse PD having a sine wave shape may be supplied. .

  Further, in the above-described embodiment, the case where a general semiconductor laser (manufactured by Sony Corporation, SLD3233 or the like) is used as the semiconductor laser 3 has been described. However, the present invention is not limited to this, and may be any semiconductor laser that performs laser oscillation using p-type and n-type semiconductors. More preferably, it is preferable to use a semiconductor laser that dares to easily generate a large relaxation oscillation.

  Furthermore, in the above-described embodiment, the case where the recording layer 101 contains a two-photon absorption material exhibiting nonlinear absorption has been described. However, the present invention is not limited to this. For example, silver or gold nanoparticles that cause plasmon resonance may be used as a material exhibiting nonlinear absorption. Further, the information light beam LM may be applied to the recording layer on which the recording mark RM is formed according to the integrated amount of light energy.

  Further, in the above-described embodiment, a recording mark RM having a mark length of 2T to 11T may be formed on the recording layer 101, and “1” and “0” are assigned to the 1T mark to record the recording mark RM. Information may be recorded depending on the presence or absence of. Furthermore, it is not necessary for one recording mark RM (ie, 1T) to be one vibration output light LB, and the recording mark RM may be formed by two or more vibration output lights LB.

  Furthermore, in the above-described embodiment, the case where the spiral track formed of the guide groove is formed in the servo layer 104 has been described. However, the present invention is not limited to this. For example, a pit or the like may be formed instead of the guide groove, or the guide groove and the pit may be combined. The tracks of the servo layer 104 may be concentric instead of spiral.

  Further, in the above-described embodiment, the case where servo control is performed using the servo layer 104 by the servo optical system 130 has been described. However, the present invention is not limited to this. For example, a servo mark serving as a positioning reference may be formed in advance in the recording layer 101, and servo control may be performed using the servo mark by the servo optical system 130. good. In this case, the servo layer 104 of the optical disc 100 can be omitted.

  Further, in the above-described embodiment, the case where the recording mark RM formed of a cavity is formed has been described. However, the present invention is not limited to this. For example, the recording mark RM may be formed by locally changing the refractive index by a chemical change.

Further, in the above-described embodiment, the case where the information light beam LM is irradiated from the substrate 102 side of the optical disc 100 has been described. However, the present invention is not limited to this, and the information light beam LM may be irradiated from either or both surfaces, for example, the information light beam LM may be irradiated from the surface on the substrate 103 side. As a method of irradiating the information light beam LM from both sides, for example, the method described in Patent Document 2 can be used.
JP 2008-71433 A

  Further, in the above-described embodiment, the case where the optical disc apparatus 110 records information on the optical disc 100 and reproduces the information has been described. However, the present invention is not limited to this, and the optical disc apparatus 110 may only record information on the optical disc 100.

  Further, in the above-described embodiment, a case where the optical pickup 117 as an optical pickup is configured by the semiconductor laser 3 as a semiconductor laser, the correction lens 162 as a divergence angle difference portion, and the objective lens 118 as an objective lens. Stated. However, the present invention is not limited to this, and an optical pickup may be configured by a semiconductor laser having various other configurations, a divergence angle difference portion, and an objective lens.

  Furthermore, in the above-described embodiment, the semiconductor laser 3 as the semiconductor laser, the correction lens 162 as the divergence angle difference portion, the objective lens 118 as the objective lens, and the drive control units 112 and 2 as the lens drive control unit. The case where the optical disk apparatus 110 as the optical disk apparatus is configured by the shaft actuator 119 has been described. However, the present invention is not limited to this, and an optical disk apparatus may be configured by a semiconductor laser having various other configurations, a divergence angle difference unit, an objective lens, and a lens drive control unit.

  The present invention can also be used in, for example, an optical information recording / reproducing apparatus that records or reproduces a large amount of information such as video content or audio content on a recording medium such as an optical disc.

It is a rough-line sectional drawing with which it uses for description of formation of the recording mark by 1 photon absorption. It is an approximate line sectional view used for explanation of formation of a recording mark by two-photon absorption. It is a basic diagram with which it uses for description of the change of the light intensity in a recording light beam. It is a basic diagram with which it uses for description of the mode of 2 photon absorption reaction. It is a basic diagram which shows the structure of a short pulse light source device. It is a basic diagram which shows a pulse signal and a laser drive signal. It is a basic diagram with which it uses for description of the relationship (1) of an injection | pouring carrier density and a photon density. It is a basic diagram with which it uses for description of the relationship between an injection | pouring carrier density and a carrier density. It is a basic diagram with which it uses for description of the relationship (2) of an injection | pouring carrier density and a photon density. It is a basic diagram with which it uses for description of the photon density in PT1. It is a basic diagram with which it uses for description of the photon density in PT2. It is a basic diagram with which it uses for description of the photon density in PT3. It is a basic diagram which shows an actual light emission waveform. It is a basic diagram which shows the relationship between a drive signal and light intensity. It is a basic diagram which shows the structure of a light measuring device. It is a basic diagram which shows the shape of each pulse. It is a basic diagram which shows the relationship between a pulse signal and a drive pulse. It is a basic diagram which shows the light intensity characteristic when the voltage of a drive pulse is changed. It is a basic diagram which shows the wavelength characteristic and light intensity characteristic when the voltage of a drive pulse is 8.8 [V]. It is a basic diagram which shows the wavelength characteristic and light intensity characteristic in case the voltage of a drive pulse is 13.2 [V]. It is a basic diagram which shows the wavelength characteristic and light intensity characteristic in case the voltage of a drive pulse is 15.6 [V]. It is a basic diagram which shows the wavelength characteristic and light intensity characteristic in case the voltage of a drive pulse is 17.8 [V]. It is a basic diagram which shows the wavelength characteristic and light intensity characteristic in case the voltage of a drive pulse is 38.4 [V]. It is a basic diagram which shows the difference in the light intensity characteristic by the presence or absence of BPF. It is a basic diagram which shows the difference in the wavelength characteristic by the presence or absence of BPF. It is a basic diagram which shows the light intensity characteristic of specific output light. It is a basic diagram with which it uses for description of the light emission point and the focus in specific output light. 1 is a schematic diagram illustrating an overall configuration of an optical disc device. It is a basic diagram which shows the structure of an optical disk. It is a basic diagram which shows the structure of the optical pick-up by 1st Embodiment. It is a basic diagram which shows the optical path of a servo light beam. It is a basic diagram which shows the optical path of an information light beam. It is a basic diagram which shows the structure of a virtual optical system. It is an approximate line figure used for explanation of formation of a recording mark. It is a basic circuit diagram which shows the structure (1) of an information optical system. It is a basic diagram which shows the structure of a correction lens. Relationship between wavelength and refractive index of correction lens material It is a basic diagram which shows the relationship between a wavelength and a focus position.

Explanation of symbols

DESCRIPTION OF SYMBOLS 3 ... Semiconductor laser, 100 ... Optical disk, 101 ... Recording layer, 110 ... Optical disk apparatus, 111 ... Control part, 112 ... Drive control part, 113 ... Signal processing part, 117 ... Optical pick-up, 118 ... Objective lens, 150 ... Information optical system, 162 ... Correction lens, LL ... Laser light, LM ... Information light beam, LE ... Singular output light, LEP ... Singular peak light, LES ... Singular slope Light, XP, XS: Optical axis, FM, FMP, FMS: Focus, QG: Target position, RA: Absorption change area, RE: Energy concentration area, RM: Recording mark.

Claims (8)

When a drive pulse that is pulsed and has a specific voltage is supplied, it has a singular peak light with a pulsed light intensity characteristic and a sloped light intensity characteristic with a light intensity smaller than the singular peak light. A semiconductor laser that sequentially emits, as laser light, singular slope light having a wavelength different from that of the singular peak light;
A divergence angle difference portion that makes the divergence angles of the singular peak light and the singular slope light different according to the wavelength of the laser light,
In the region where the first reaction has occurred, the singular peak light is condensed on the recording layer of the optical disc, the first reaction is caused in the region near the focal point, and then the singular slope light is condensed. An objective lens for generating a second reaction and forming a recording mark on the side irradiated with the specific slope light,
The divergence angle difference part is
An optical pickup in which divergence angles of the singular peak light and the singular slope light are made different from each other so that the first reaction is caused in a range including the focal point with a distance from a focal point of the singular slope light in the recording layer. The divergence angle difference part is
The optical pickup according to claim 1, wherein a divergence angle of the singular peak light is changed without changing a divergence angle of the singular slope light. The semiconductor laser is
When emitting normal output light whose intensity does not vibrate and the singular slope light, the emission end face is used as a light emission point, and when emitting the singular peak light, a place other than the emission end face is used as a light emission point. Item 3. The optical pickup according to Item 2. The semiconductor laser is
The optical pickup according to claim 3, wherein when emitting the singular peak light, a predetermined location inside the semiconductor laser is a light emitting point. The divergence angle difference part is
It has the 1st lens and 2nd lens which consist of material from which dispersion | distribution differs mutually, and the refractive index in the wavelength of the said specific slope light is substantially equivalent between the said 1st lens and the said 2nd lens. The optical pickup according to claim 1, wherein the refractive index at a wavelength of the specific peak light is different. The recording layer of the optical disc is
The two-photon absorption reaction occurs in the region near the focal point of the singular peak light, and the singular slope light is condensed in the region where the two-photon absorption reaction occurs to cause a thermal reaction, thereby forming the recording mark. The optical pickup according to claim 1. By supplying a driving pulse that is pulsed and has a predetermined singular voltage to the semiconductor laser, the singular peak light having the pulsed light intensity characteristic from the semiconductor laser and the light intensity is lower than the singular peak light. A step of emitting a specific slope light having a slope-like light intensity characteristic and a wavelength different from that of the specific peak light, as laser light sequentially,
A divergence angle difference step for changing the divergence angles of the singular peak light and the singular slope light according to the wavelength of the laser light,
The first reaction is performed by condensing the singular peak light on a recording layer of the optical disc by a predetermined objective lens, causing the first reaction to occur in a region near the focal point, and then condensing the singular slope light. A condensing step for generating a second reaction and forming a recording mark on the side where the specific slope light is irradiated in the region where
In the above divergence angle difference step,
Optical information recording in which the divergence angles of the singular peak light and the singular slope light are made different in the recording layer so as to cause the first reaction in a range including the focal point with a distance from the focal point of the singular slope light. Method. When a drive pulse that is pulsed and has a specific voltage is supplied, it has a singular peak light with a pulsed light intensity characteristic and a sloped light intensity characteristic with a light intensity smaller than the singular peak light. A semiconductor laser that sequentially emits, as laser light, singular slope light having a wavelength different from that of the singular peak light;
A divergence angle difference portion that makes the divergence angles of the singular peak light and the singular slope light different according to the wavelength of the laser light,
In the region where the first reaction has occurred, the singular peak light is condensed on the recording layer of the optical disc, the first reaction is caused in the region near the focal point, and then the singular slope light is condensed. An objective lens that generates a second reaction on the side irradiated with the specific slope light to form a recording mark and driving the objective lens control the position of the focal point in the specific peak light and the specific slope light. A lens drive control unit, and
The divergence angle difference part is
An optical disc apparatus, wherein the divergence angles of the singular peak light and the singular slope light are made different so that the first reaction is caused in the range including the focal point in the recording layer with the center far from the focal point of the singular slope light.

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