JP2010090000A - Apparatus for producing polycrystalline silicon - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To prevent a short circuit between an electrode unit and a reaction furnace when polycrystalline silicon is deposited. <P>SOLUTION: An apparatus for producing the polycrystalline silicon where the polycrystalline silicon is deposited on the surfaces of silicon core rods 4 by supplying a raw material gas to the silicon core rods 4 being heated and vertically standing in the reaction furnace 1 includes: electrodes 47 vertically extending and holding the silicon core rods 4; an electrode holder 46 inside of which a coolant flow path 40 to flow a cooling medium is formed and which holds the electrodes 47 by being inserted into a through-hole 21 formed on the bottom plate 2 of the reaction furnace; an annular insulating material 34 placed between the inner peripheral surface of the through-hole 21 and the outer peripheral surface of the electrode holder 46 and electrically insulating between the bottom plate 2 and the electrode holder 46; and a saucer 50 opened upward between the circular insulating material 34 and the electrodes 47 on the outer peripheral surface of the electrode holder 46. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a polycrystalline silicon manufacturing apparatus for manufacturing polycrystalline silicon rods by depositing polycrystalline silicon on the surface of a heated silicon core rod.

  Conventionally, a Siemens method is known as this type of polycrystalline silicon manufacturing apparatus. In this polycrystalline silicon manufacturing apparatus by the Siemens method, a large number of seeds made of silicon core rods are placed in a sealed reaction furnace and heated, and the reaction furnace is made of a mixed gas of chlorosilane gas and hydrogen gas. A raw material gas is supplied, brought into contact with a heated silicon core rod, and polycrystalline silicon generated by thermal decomposition of the raw material gas and hydrogen reduction is deposited on the surface thereof.

In such a polycrystalline silicon manufacturing apparatus, a silicon core rod serving as a seed is fixed in an upright state on an electrode disposed on the inner bottom portion of the reaction furnace. The silicon core rod is heated, and the raw material gas ejected from below is brought into contact with the surface of the silicon core rod to form a polycrystalline silicon rod. A plurality of electrodes for holding the silicon core rod are provided so as to be distributed over substantially the entire inner bottom surface of the reaction furnace. As described in Patent Document 1, an annular ring is formed in the through hole of the bottom plate portion of the reaction furnace. Surrounded by the insulating material, it is electrically insulated from the reactor. The electrode is cooled to prevent deterioration and deformation of the insulating material due to the high temperature in the furnace, and two C-shaped short-circuit prevention plates are attached around the electrode from the side. Yes.
JP 2007-107030 A

  In the polycrystalline silicon manufacturing apparatus described above, when depositing polycrystalline silicon on a silicon core rod, the chlorosilane polymer as a by-product may be condensed on the cooled electrode holder. When such a by-product flows down the electrode and adheres to the insulating material, and is heated by radiant heat or heat transfer to thermally decompose and convert to conductive silicon, a short circuit occurs between the electrode and the bottom plate of the reactor. There arises a problem that energization to the electrode is hindered. In addition, the insulating material may be deteriorated due to adhesion of by-products. In the short circuit prevention plate described in Patent Document 1, it is necessary to change the orientation and attach two or more sheets, and a gap is easily formed between the short circuit prevention plate and the electrode holder.

  The present invention has been made in view of such circumstances, and provides a polycrystalline silicon manufacturing apparatus capable of reliably preventing a short circuit between an electrode holder and a reactor caused by silicon generated from a by-product condensed during deposition of polycrystalline silicon. With the goal.

  In order to achieve the above object, the polycrystalline silicon production apparatus of the present invention supplies polycrystalline silicon to the surface of the silicon core rod by supplying a raw material gas to the silicon core rod along the vertical direction heated in the reactor. In the polycrystalline silicon manufacturing apparatus for precipitation, an electrode for extending and holding the silicon core rod in the vertical direction and a cooling channel for circulating a cooling medium are formed inside, and a through hole formed in the bottom plate portion of the reactor An electrode holder that holds the electrode, and is disposed between the inner peripheral surface of the through hole and the outer peripheral surface of the electrode holder, and electrically between the bottom plate portion and the electrode holder. An annular insulating material to be insulated is provided, and a tray portion that opens upward is provided between the annular insulating material and the electrode on the outer peripheral surface of the electrode holder.

  That is, in this polycrystalline silicon manufacturing apparatus, the condensed by-product is stored in the tray part, so that it is possible to prevent the by-product from flowing down below the tray part. Moreover, since the tray portion is formed integrally with the outer peripheral surface of the electrode holder, the by-products that flow down along the outer peripheral surface can be reliably collected.

  Further, in the polycrystalline silicon manufacturing apparatus of the present invention, the outer peripheral surface of the electrode holder is in contact with at least a part of the upper surface of the upper end portion of the annular insulating material, and a part of the cooling channel is formed therein. It is preferable that an enlarged diameter portion is provided, and the tray portion is provided on an upper portion of the enlarged diameter portion.

  In this polycrystalline silicon manufacturing apparatus, since the annular insulating material can be cooled by the enlarged diameter portion, it is possible to more efficiently prevent a short circuit and protect the annular insulating material.

  According to the polycrystalline silicon manufacturing apparatus of the present invention, by providing the tray portion, it is possible to prevent the by-product from flowing down on the annular insulating material. Therefore, it is possible to prevent a short circuit between the electrode and the reaction furnace due to silicon generated from the by-product, and increase the productivity of polycrystalline silicon. Moreover, since it is possible to prevent the by-product from adhering to the annular insulating material, it is possible to prevent the annular insulating material from being deteriorated or deformed due to adhesion of the by-product.

Hereinafter, an embodiment of a polycrystalline silicon manufacturing apparatus of the present invention will be described with reference to the drawings.
FIG. 1 is an overall view of a polycrystalline silicon manufacturing apparatus to which the present invention is applied. A reaction furnace 1 of this polycrystalline silicon manufacturing apparatus includes a bottom plate part 2 constituting a furnace bottom, and a bell-shaped bell jar 3 detachably mounted on the bottom plate part 2. The upper surface of the bottom plate part 2 is formed in a substantially flat horizontal plane. The bell jar 3 has a bell shape as a whole, and the ceiling is formed in a dome shape. The bottom plate 2 and the wall of the bell jar 3 have a jacket structure (not shown) and are cooled by cooling water.

  A plurality of electrode units 5A and 5B, to which a silicon core rod 4 to be a seed rod (seed) of generated polycrystalline silicon is attached, and a raw material gas containing chlorosilane gas and hydrogen gas are introduced into the bottom plate 2 A plurality of jet nozzles (gas supply ports) 6 for jetting and a plurality of gas discharge ports 7 for discharging the reacted gas outside the furnace are provided.

The raw material gas injection nozzles 6 are distributed over almost the entire upper surface of the bottom plate portion 2 of the reactor 1 so as to supply the raw material gas uniformly to the silicon core rods 4 with appropriate intervals. However, a plurality of them are installed, and each is connected to a source gas supply source 8 outside the reactor 1. A plurality of gas discharge ports 7 are installed in the vicinity of the outer peripheral portion on the bottom plate portion 2 with appropriate intervals in the circumferential direction, and are connected to an external exhaust gas treatment system 9. In addition, the code | symbol 10 in a figure shows the power supply connected to electrode unit 5A, 5B.

  In the polycrystalline silicon manufacturing apparatus configured as described above, the silicon core rod 4 is energized from each electrode unit 5A, 5B to make the silicon core rod 4 in a resistance heating state, and even between the silicon core rods 4, The silicon core rod 4 is heated by receiving radiation heat from adjacent silicon core rods 4 and synergistically enters a high temperature state, and the raw material gas contacting the surface of the silicon core rod 4 in the high temperature state reacts to deposit polycrystalline silicon.

Here, a connection structure between the electrode units will be described.
As shown in FIG. 2, the electrode unit 5 </ b> A is a single electrode unit 5 </ b> A that holds one silicon core 4, and the electrode unit 5 </ b> B is a two electrode unit 5 </ b> B that holds two silicon cores 4. . These electrode units 5 </ b> A and 5 </ b> B are attached to a through hole 21 formed in the bottom plate part 2. The silicon core rod 4 is vertically extended by being fixed in a state where the lower end portion is inserted into the electrode units 5A and 5B.
One short connecting member 12 is attached to the upper end so that two of these silicon core rods 4 are connected in pairs. This connecting member 12 is also formed of the same silicon as the silicon core rod 4. The seed assembly 13 is assembled by the two silicon core rods 4 and the connecting member 12 that connects them with each other so as to have a generally square shape.

  Three seed assemblies 13 are provided so as to straddle between the four electrode units 5A, 5B, and the electrode units 5A, 5B are arranged concentrically from the center of the reaction furnace 1, As a whole, they are arranged almost concentrically. Both silicon core rods 4 of one seed assembly 13 are respectively held by different adjacent electrodes. The single electrode unit 5A and the double electrode unit 5B are each one single electrode from the end of the row of units so that three sets of seed assemblies 13 are connected in series as one unit. The units 5A, two two electrode units 5B, and one single electrode unit 5A are arranged in this order.

  That is, one of the two silicon core rods 4 of the seed assembly 13 is held in the single electrode unit 5A, and the two silicon cores of the seed assembly 13 are held in the two electrode units 5B. One bar 4 is held at a time. A power source 10 is connected to the one electrode unit 5A at both ends of the column via a power cable so that a current flows.

  As described above, two types of electrodes are provided, and one electrode unit 5A for holding one silicon core rod 4 and two electrode units 5B for holding two silicon core rods 4 are provided. The number of electrodes can be reduced as compared with the case where the electrodes are held one by one, and the number of through holes formed in the bottom plate portion 2 of the reaction furnace 1 can be reduced correspondingly, thereby maintaining the bottom plate portion 2 in a rigid structure. be able to. In other words, since a large number of silicon core rods 4 can be held with a small number of electrodes, a large number of silicon core rods 4 can be installed in the reaction furnace 1, and productivity can be increased. Further, since the number of electrodes is small, the number of cooling pipes and power cables arranged below the bottom plate portion 2 can be reduced, and the maintenance workability is improved.

Next, each electrode unit and its peripheral structure will be described.
Electrode unit 5A, 5B is provided with the electrode holder inserted in the through-hole 21 formed in the baseplate part 2 of the reaction furnace 1, and the electrode attached to the upper part of this electrode holder. These electrode holders are made of a conductive material such as stainless steel, and the electrodes are made of carbon or the like.
The electrode holder of the single electrode unit 5A is formed in a rod shape as a whole, and the electrode is coaxially fixed to the upper part thereof, whereas the electrode holder 46 of the dual electrode unit 5B is bifurcated at the upper end. It is formed in a branched T shape, and an electrode 47 is provided at each of both branched ends.

  The electrode 5 for the two electrodes 5B will be described in more detail. As shown in FIG. 3, the electrode holder 46 of the electrode unit for the two electrodes 5B is formed hollow by a conductive material such as stainless steel, and has a rod portion 41 having a rod shape as a whole. The arm portion 42 orthogonal to the upper end of the rod portion 41 is integrally formed. In the rod portion 41, a male screw portion 46 a is formed at a position protruding from the lower surface of the bottom plate portion 2.

  The arm portion 42 extends horizontally from the upper end of the rod portion 41 in the left-right direction, thereby forming a T-shape together with the rod portion 41. A female screw hole 42a is formed. The electrode 47 is screwed into the female screw hole 42a and exposed at the upper portion of the arm portion 42. A nut member 44 is attached to the proximal end portion of the electrode 47 on the arm portion 42. The nut member 44 is formed in a cylindrical shape as a whole by carbon or the like, and a female thread portion that is screwed into the electrode 47 is formed on the inner peripheral portion thereof.

  The through hole 21 of the bottom plate portion 2 in which the electrode holder 46 is inserted has a straight portion 21A at the lower portion and a tapered portion 21B whose upper portion gradually increases in diameter upward. The straight portion 21 </ b> A has an inner diameter larger than the outer diameter of the rod portion 41 of the electrode holder 46. Thereby, a ring-shaped space is formed around the rod portion 41. A counterbore portion 33 having an inner diameter larger than the maximum inner diameter of the tapered portion 21B is formed in the upper opening of the tapered portion 21B.

An annular insulating material 34 is provided between the inner peripheral surface of the through hole 21 and the rod portion 41 of the electrode holder 46 so as to surround the electrode holder 46. The annular insulating material 34 is formed of a high melting point insulating resin such as a fluorine-based resin typified by polytetrafluoroethylene (PTFE) or perfluoroalkoxyalkane (PFA), and is inserted into the straight portion 21A of the through hole 21. It is comprised from two members, the sleeve 35 with a collar and the cone member 36 arrange | positioned at the taper part 21B of the through-hole 21. As shown in FIG. For example, PTFE used as the material for the annular insulating material 34 has a melting point (ASTM standard: D792) of 327 ° C., a flexural modulus (ASTM standard: D790) of 0.55 GPa, and a tensile elastic modulus (ASTM standard: D638) of 0.44 to 0.55 GPa, linear expansion coefficient (ASTM standard: D696) 10 × 10 ⁻⁵ / ° C.

  The outer surface of the cone member 36 is formed in a taper shape having the same inclination angle as the inner peripheral surface of the tapered portion 21B of the through hole 21, and is inserted into the through hole 21 from above the bottom plate portion 2 to the inner surface of the tapered portion 21B. It is made to contact. The lower surface of the enlarged diameter portion 45 provided on the electrode holder 46 is in contact with the upper surface of the upper end portion of the cone member 36. The outer diameter of the enlarged diameter portion 45 is set to be approximately equal to or slightly smaller than the maximum outer diameter of the cone member 36, that is, the outer diameter of the upper surface of the upper end portion. Covers the top surface.

  O-rings 43 are provided on the outer peripheral surface of the cone member 36 and the inner peripheral portion of the upper end surface, respectively. By these O-rings 43, the airtightness between the cone member 36, the electrode holder 46, and the bottom plate portion 2, that is, the airtightness in the through hole 21 of the reaction furnace 1 is maintained.

  The flanged sleeve 35 is inserted into the straight portion 21 </ b> A so that a flange portion 37 formed integrally with the lower end of the sleeve 35 comes into contact with the back surface of the bottom plate portion 2 of the reaction furnace 1. The lower surface of the collar portion 37 is pressed against the back surface of the bottom plate portion 2 by a nut 38 screwed into the threaded portion 46 a of the electrode holder 46 through a stainless steel washer 39.

  By tightening the nut 38, the electrode holder 46 is pulled downward with respect to the bottom plate portion 2, and the annular insulating member 34 is sandwiched between the enlarged diameter portion 45 and the nut 38, and the through hole is generated by the clamping force. The outer peripheral surface of the cone member 36 is pressed against the inner peripheral surface of the taper portion 21 </ b> B of 21, and the annular insulating material 34 and the electrode holder 46 are integrally fixed to the bottom plate portion 2. At this time, while confirming the height position of the lower surface of the enlarged diameter portion 45 of the electrode holder 46 (projection height from the surface of the bottom plate portion 2), the lower portion of the enlarged diameter portion 45 approaches the bottom plate portion 2 and these The screwing amount of the nut 38 is adjusted so that no electrical short circuit occurs between them.

  In this fixed state, the upper end portion of the cone member 36 of the annular insulating material 34 projects slightly upward from the tapered portion 21 </ b> B of the through hole 21 and faces the counterbore portion 33. For this reason, the outer diameter of the upper end portion of the cone member 36 is larger than the maximum outer diameter of the tapered portion 21 </ b> B so that the upper end portion protrudes from the bottom surface of the counterbore portion 33 and does not protrude beyond the upper end portion of the counterbore portion 33. Is also set larger.

  On the outer peripheral surface of the electrode holder 46, the upper surface 45c of the enlarged diameter portion 45 and the circumferential wall provided on the outer peripheral portion of the upper surface 45c are positioned below the arm portion 42 and above the upper surface of the bottom plate portion 2. A tray portion 50 that opens upward is provided by the portion 45 a and the outer peripheral surface of the rod portion 41 of the electrode holder 46.

As shown in FIG. 4, when the liquid by-product B condensed on the upper surface of the electrode holder 46 flows along the arm part 42 and the rod part 41 as shown in FIG. By accumulating B, adhesion to the periphery of the annular insulating material 34 can be prevented.
The by-product B is a chlorosilane polymer or the like that condenses on the surface because the electrode holder 46 is cooled, but is polycrystal having conductivity in a high-temperature atmosphere by being heated by radiant heat or heat transfer. Convert to silicon. For this reason, when this by-product B adheres to the periphery of the annular insulating material 34, when heated and converted into silicon, the electrode holder 46 and the bottom plate portion 2 of the reactor 1 are short-circuited, There is a risk of interrupting the current supply.

  The saucer part 50 is provided for the purpose of preventing such a by-product B from adhering to the periphery of the annular insulating material 34. Therefore, the volume of the tray part 50 is set so that the by-product B that flows down during at least one treatment for depositing polycrystalline silicon in the reaction furnace 1 can be accommodated.

  Here, the internal space of the electrode holder 46 will be described. First, the arm portion 42 includes a straight inner space 42b extending in the left-right direction and an arcuate inner space 42c that surrounds the outer periphery of each female screw hole 42a in a C shape and communicates with the straight inner space 42b. And are formed. The straight internal space 42b is partitioned vertically by the third partition plate 48C.

  The upper space of the rod portion 41 is partitioned into a left space 41c and a right space 41d by a second partition plate 48B connected to the third partition plate 48C and extending in the vertical direction. Connected to the lower end of the second partition plate 48B is a disk-shaped first partition plate 48A that vertically divides the inside of the rod portion 41 so as to be substantially orthogonal to the axial direction of the rod portion 41. The first partition plate 48A is formed with a through hole 48a that opens only on the right side of the second partition plate 48B. Further, the rod portion 41 has a first opening 41a provided on the lower side of the second partition plate 48B, and an upper side of the second partition plate 48B and 180 ° opposite to the first opening 41a with the axis line in between. And a second opening 41b provided in the.

  The enlarged diameter portion 45 is an annular member that forms an annular space 45b between the rod portion 41 and the outer peripheral surface of the rod portion 41 by tightly fitting to the outer peripheral surface of the rod portion 41. The rod portion 41 is formed with a step portion 41e between an upper portion having a larger outer diameter and a lower portion having a smaller outer diameter, and the upper surface 45c of the enlarged diameter portion 45 abuts on the lower surface of the step portion. The state is fixed. Thereby, the inner peripheral part of the upper surface 45c of the enlarged diameter part 45 which comprises the saucer part 50 is the state covered with the step part 41e of the rod part 41. FIG. The annular space 45b in the enlarged diameter portion 45 is connected to the rod through a first opening 41a that opens below the first partition plate 48A and a second opening 41b that opens above the first partition plate 48A. It communicates with the part 41.

  Further, an inner cylinder 49 communicating with the right space 41d through the through hole 48a is attached to the lower surface of the first partition plate 48A substantially coaxially with the rod portion 41. The inner cylinder 49 divides the interior of the rod portion 41 below the first partition plate 48A into an outer peripheral side space (outer peripheral side channel 40A) and an inner peripheral side space (inner peripheral side channel 40B). .

  Thus, in the electrode holder 46, the outer peripheral side flow path 40A and the inner peripheral side flow path 40B below the rod part 41, the annular space 45b of the enlarged diameter part 45, the left side space 41c and the right side space 41d above the rod part 41. The cooling flow path 40 is formed by the straight space 42b and the arc space 42c of the arm portion 42.

  In the cooling flow path 40, the cooling medium flows from the lower end portion of the electrode holder 46 into the outer peripheral flow path 40 </ b> A formed between the outer peripheral surface of the inner cylinder 49 and the inner peripheral surface of the rod portion 41, and upwards. Circulate. After reaching the first partition plate 48A, the cooling medium is blocked by the first partition plate 48A, flows into the annular space 45b in the enlarged diameter portion 45 through the first opening 41a, and cools the enlarged diameter portion 45. Then, it flows through the second opening 41b to the upper side of the first partition plate 48A and the left side of the second partition plate 48B, that is, the left side space 41c.

  After the cooling medium flowing into the left space 41c is guided from the lower left part of the straight inner space 42b of the arm portion 42 to the left arcuate inner space 42c by the second partition plate 48B and the third partition plate 48C, In the straight internal space 42b, it flows through the upper side of the third partition plate 48C and is guided to the lower right portion of the straight internal space 42b through the right-side arc-shaped internal space 42c. The cooling medium cools the electrode 47 during this time. Then, when flowing through the right space 41d along the second partition plate 28B and reaching the first partition plate 48A, the cooling medium flows into the inner peripheral flow path 40B in the inner cylinder 49 through the through hole 48a, and the electrode holder 46 is discharged.

  In the polycrystalline silicon manufacturing apparatus configured as described above, if the stainless steel electrode holder is not cooled, there is a risk of contamination due to the metal component of the electrode holder heated to a high temperature. For this reason, although the electrode holder is cooled as described above, condensation tends to occur on the surface of the electrode holder that has become low temperature. In particular, the electrode holder for the two electrodes is T-shaped, and since the cooled surface area is largely exposed, many by-products are likely to be generated. In the present invention, as shown in the above embodiment, the by-product B condensed on the surface of the electrode holder when the raw material gas contacting the surface of the high-temperature silicon core rod 4 reacts to precipitate polycrystalline silicon. Even if it flows down through the electrode holder, it can be stored in the tray part 50, so that a short circuit between the electrode and the reactor caused by silicon caused by by-products can be prevented, and the function of the facility can be maintained appropriately. In addition, since the saucer portion of the present invention is provided integrally with the electrode holder, no by-product flows between the saucer portion and the electrode holder, and a short circuit is reliably caused by silicon generated from the by-product. Can be prevented.

  In addition, this invention is not limited to the thing of the structure of the said embodiment, In a detailed structure, a various change can be added in the range which does not deviate from the meaning of this invention. For example, as described in the above embodiment, the tray portion is preferably provided in the two-electrode unit that has a larger surface area and easily generates a by-product, but the tray portion is also provided in the single-electrode unit. Thus, it is possible to more reliably prevent a short circuit between the electrode unit and the reaction furnace.

  Moreover, in the said embodiment, although the circular saucer part was illustrated, as shown in FIG.5 and FIG.6 (a), (b), elliptical saucer part 51, rectangular saucer part 52, etc. are not circular. A saucer may be provided. 6A and 6B are views corresponding to the arrows AA in FIG. 5, and the cross-sectional shapes in FIG. 5 are common. 5 and 6, the same reference numerals are given to the same portions as those in the above embodiment, and the description thereof is omitted. Thus, when the tray parts 51 and 52 are made into an ellipse or a rectangle, the by-product which propagates the outer peripheral surface of the electrode holder 46 by making the longitudinal direction correspond to the direction where the arm part 42 of the electrode holder 46 is extended. It can be received more reliably and a short circuit between the electrode unit and the reactor can be prevented.

It is the perspective view which notched the bell jar of the reaction furnace partially. It is a schematic sectional drawing of the reaction furnace shown in FIG. It is an expanded sectional view which shows the principal part of the electrode unit for 2 of the reactor shown in FIG. It is an enlarged view which shows the by-product adhering to the electrode unit for 2 pieces. It is principal part sectional drawing which shows the other example of a saucer part. It is a top view equivalent to the AA arrow of FIG. 5, (a) shows an elliptical saucer part, (b) shows a rectangular saucer part.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Reaction furnace 2 Bottom plate part 4 Silicon core rod 5A, 5B Electrode unit 21 Through-hole 34 Annular insulating material 40 Cooling flow path 40A Outer peripheral side flow path 40B Inner peripheral side flow path 45 Expanded diameter part 46 Electrode holder 47 Electrodes 50, 51, 52 saucer

Claims (2)

In the polycrystalline silicon production apparatus for depositing polycrystalline silicon on the surface of the silicon core rod by supplying a raw material gas to the silicon core rod along the vertical direction heated in the reaction furnace,
An electrode for holding the silicon core;
A cooling flow path for circulating the cooling medium is formed inside, an electrode holder that is inserted into a through hole formed in the bottom plate portion of the reaction furnace, and holds the electrode;
An annular insulating material disposed between the inner peripheral surface of the through hole and the outer peripheral surface of the electrode holder, and electrically insulating between the bottom plate portion and the electrode holder;
The polycrystalline silicon manufacturing apparatus according to claim 1, wherein a receiving tray portion that opens upward is provided between the annular insulating material and the electrode on an outer peripheral surface of the electrode holder.   On the outer peripheral surface of the electrode holder, there is provided an enlarged diameter portion that contacts at least a part of the upper surface of the upper end portion of the annular insulating material and in which a part of the cooling channel is formed, and the tray portion is The polycrystalline silicon manufacturing apparatus according to claim 1, wherein the polycrystalline silicon manufacturing apparatus is provided on an upper portion of the enlarged diameter portion.

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