JP2010083830A - Algae outgrowth inhibitor and algae outgrowth suppressing treating method on surface of goods - Google Patents
Algae outgrowth inhibitor and algae outgrowth suppressing treating method on surface of goods Download PDFInfo
- Publication number
- JP2010083830A JP2010083830A JP2008256236A JP2008256236A JP2010083830A JP 2010083830 A JP2010083830 A JP 2010083830A JP 2008256236 A JP2008256236 A JP 2008256236A JP 2008256236 A JP2008256236 A JP 2008256236A JP 2010083830 A JP2010083830 A JP 2010083830A
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- Prior art keywords
- algae
- group
- chloride
- ammonium chloride
- generation inhibitor
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- 239000003112 inhibitor Substances 0.000 title claims abstract description 71
- 238000000034 method Methods 0.000 title claims abstract description 34
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- 229910052736 halogen Inorganic materials 0.000 claims abstract description 14
- 125000003545 alkoxy group Chemical group 0.000 claims abstract description 9
- 150000003377 silicon compounds Chemical class 0.000 claims abstract description 5
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- 150000004665 fatty acids Chemical class 0.000 claims description 13
- WSFMFXQNYPNYGG-UHFFFAOYSA-M dimethyl-octadecyl-(3-trimethoxysilylpropyl)azanium;chloride Chemical compound [Cl-].CCCCCCCCCCCCCCCCCC[N+](C)(C)CCC[Si](OC)(OC)OC WSFMFXQNYPNYGG-UHFFFAOYSA-M 0.000 claims description 12
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- KWIUHFFTVRNATP-UHFFFAOYSA-N Betaine Natural products C[N+](C)(C)CC([O-])=O KWIUHFFTVRNATP-UHFFFAOYSA-N 0.000 claims description 8
- KWIUHFFTVRNATP-UHFFFAOYSA-O N,N,N-trimethylglycinium Chemical compound C[N+](C)(C)CC(O)=O KWIUHFFTVRNATP-UHFFFAOYSA-O 0.000 claims description 8
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- JNGWKQJZIUZUPR-UHFFFAOYSA-N [3-(dodecanoylamino)propyl](hydroxy)dimethylammonium Chemical compound CCCCCCCCCCCC(=O)NCCC[N+](C)(C)[O-] JNGWKQJZIUZUPR-UHFFFAOYSA-N 0.000 claims description 7
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- HRBYCVPFYWTROV-UHFFFAOYSA-M dimethyl-octadecyl-(3-triethoxysilylpropyl)azanium;chloride Chemical compound [Cl-].CCCCCCCCCCCCCCCCCC[N+](C)(C)CCC[Si](OCC)(OCC)OCC HRBYCVPFYWTROV-UHFFFAOYSA-M 0.000 claims description 3
- IELHBSJGCUPYDX-UHFFFAOYSA-M dimethyl-octadecyl-[3-tri(propan-2-yloxy)silylpropyl]azanium;chloride Chemical compound [Cl-].CCCCCCCCCCCCCCCCCC[N+](C)(C)CCC[Si](OC(C)C)(OC(C)C)OC(C)C IELHBSJGCUPYDX-UHFFFAOYSA-M 0.000 claims description 3
- OIYJQMZNRJJLJX-UHFFFAOYSA-M dodecyl(trimethyl)azanium;acetate Chemical compound CC([O-])=O.CCCCCCCCCCCC[N+](C)(C)C OIYJQMZNRJJLJX-UHFFFAOYSA-M 0.000 claims description 3
- XLGBLPNKBBGIQB-UHFFFAOYSA-M dodecyl-tri(propan-2-yl)azanium;bromide Chemical compound [Br-].CCCCCCCCCCCC[N+](C(C)C)(C(C)C)C(C)C XLGBLPNKBBGIQB-UHFFFAOYSA-M 0.000 claims description 3
- YXIONSMVVATJSX-UHFFFAOYSA-M heptadecyl-di(propan-2-yl)-(2-triethoxysilylethyl)azanium;chloride Chemical compound [Cl-].CCCCCCCCCCCCCCCCC[N+](C(C)C)(C(C)C)CC[Si](OCC)(OCC)OCC YXIONSMVVATJSX-UHFFFAOYSA-M 0.000 claims description 3
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- VQHINEGBLTYXBJ-UHFFFAOYSA-M octadecyl-dipropyl-(4-trimethoxysilylbutyl)azanium;acetate Chemical compound CC([O-])=O.CCCCCCCCCCCCCCCCCC[N+](CCC)(CCC)CCCC[Si](OC)(OC)OC VQHINEGBLTYXBJ-UHFFFAOYSA-M 0.000 claims description 3
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- DGMKFQYCZXERLX-UHFFFAOYSA-N proglumide Chemical compound CCCN(CCC)C(=O)C(CCC(O)=O)NC(=O)C1=CC=CC=C1 DGMKFQYCZXERLX-UHFFFAOYSA-N 0.000 claims description 3
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- WPPGURUIRLDHAB-UHFFFAOYSA-M triethyl(hexadecyl)azanium;chloride Chemical compound [Cl-].CCCCCCCCCCCCCCCC[N+](CC)(CC)CC WPPGURUIRLDHAB-UHFFFAOYSA-M 0.000 claims description 3
- OWGHQYPQNSZTFQ-UHFFFAOYSA-M triethyl(octadecyl)azanium;chloride Chemical compound [Cl-].CCCCCCCCCCCCCCCCCC[N+](CC)(CC)CC OWGHQYPQNSZTFQ-UHFFFAOYSA-M 0.000 claims description 3
- OPOYIRZGOYMLBV-UHFFFAOYSA-M triethyl(pentadecyl)azanium;chloride Chemical compound [Cl-].CCCCCCCCCCCCCCC[N+](CC)(CC)CC OPOYIRZGOYMLBV-UHFFFAOYSA-M 0.000 claims description 3
- PGNGVFSZMOYXEM-UHFFFAOYSA-N triethyl(tridecyl)azanium Chemical compound CCCCCCCCCCCCC[N+](CC)(CC)CC PGNGVFSZMOYXEM-UHFFFAOYSA-N 0.000 claims description 3
- OHCYZUDVCRJREC-UHFFFAOYSA-M trimethyl(pentadecyl)azanium;chloride Chemical compound [Cl-].CCCCCCCCCCCCCCC[N+](C)(C)C OHCYZUDVCRJREC-UHFFFAOYSA-M 0.000 claims description 3
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- UZNSSUOXQKJMPY-UHFFFAOYSA-M heptadecyl-dimethyl-(3-trimethoxysilylpropyl)azanium;chloride Chemical compound [Cl-].CCCCCCCCCCCCCCCCC[N+](C)(C)CCC[Si](OC)(OC)OC UZNSSUOXQKJMPY-UHFFFAOYSA-M 0.000 claims description 2
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- SYELZBGXAIXKHU-UHFFFAOYSA-N dodecyldimethylamine N-oxide Chemical compound CCCCCCCCCCCC[N+](C)(C)[O-] SYELZBGXAIXKHU-UHFFFAOYSA-N 0.000 description 1
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- 238000005868 electrolysis reaction Methods 0.000 description 1
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- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
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- ATPUEECSGDZDJO-UHFFFAOYSA-M hexadecyl(tripropyl)azanium;chloride Chemical compound [Cl-].CCCCCCCCCCCCCCCC[N+](CCC)(CCC)CCC ATPUEECSGDZDJO-UHFFFAOYSA-M 0.000 description 1
- 125000004836 hexamethylene group Chemical group [H]C([H])([*:2])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[*:1] 0.000 description 1
- 125000003707 hexyloxy group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])O* 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 125000003253 isopropoxy group Chemical group [H]C([H])([H])C([H])(O*)C([H])([H])[H] 0.000 description 1
- 229940070765 laurate Drugs 0.000 description 1
- 125000002960 margaryl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- KBOPZPXVLCULAV-UHFFFAOYSA-N mesalamine Chemical compound NC1=CC=C(O)C(C(O)=O)=C1 KBOPZPXVLCULAV-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 1
- 125000001570 methylene group Chemical group [H]C([H])([*:1])[*:2] 0.000 description 1
- 244000005700 microbiome Species 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- 125000001421 myristyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 125000001196 nonadecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000001400 nonyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 235000020636 oyster Nutrition 0.000 description 1
- 125000000913 palmityl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000002958 pentadecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229940072223 pentasa Drugs 0.000 description 1
- 125000004115 pentoxy group Chemical group [*]OC([H])([H])C([H])([H])C([H])([H])C(C([H])([H])[H])([H])[H] 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920001515 polyalkylene glycol Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920002503 polyoxyethylene-polyoxypropylene Polymers 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- 125000002572 propoxy group Chemical group [*]OC([H])([H])C(C([H])([H])[H])([H])[H] 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
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- 229950006451 sorbitan laurate Drugs 0.000 description 1
- 235000011067 sorbitan monolaureate Nutrition 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 125000004079 stearyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 125000000383 tetramethylene group Chemical group [H]C([H])([*:1])C([H])([H])C([H])([H])C([H])([H])[*:2] 0.000 description 1
- 125000003944 tolyl group Chemical group 0.000 description 1
- 125000002889 tridecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000003258 trimethylene group Chemical group [H]C([H])([*:2])C([H])([H])C([H])([H])[*:1] 0.000 description 1
- 125000002948 undecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
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- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Landscapes
- Agricultural Chemicals And Associated Chemicals (AREA)
Abstract
Description
本発明は、物品表面の藻類発生抑制剤と抑制方法に関し、特に水槽、貯水槽、空調設備や浴槽循環系統の配管といった物品表面の藻類の発生を抑制するために使用する藻類発生抑制剤と藻類発生抑制処理方法とに関するものである。 TECHNICAL FIELD The present invention relates to an algae generation inhibitor and a suppression method on an article surface, and in particular, an algae generation inhibitor and an algae used to suppress the generation of algae on an article surface such as a water tank, a water tank, an air conditioner, and a piping of a bathtub circulation system. The present invention relates to an occurrence suppression processing method.
一般に藻類発生についての問題としては、例えば、鑑賞魚用水槽、貯水槽、浴槽の循環系統の配管などでは、通常の使用により、水と接触する面に藻類が発生することがあって、飼育する魚の健康状態に悪影響を及ぼしたり、水質悪化を招いたり、衛生上問題となることがある。特に、近年流行の大型水槽による巨大観察用透明壁を設けた水族館においては、透明壁への藻類の発生は観察を妨げるため、営業上も問題である。更に、空調設備において、冷却水温度を低下させるための冷却板においても、冷却板表面に発生した水滴により藻類が発生し、冷却効率が低下する問題もある。また、船底に発生する藻類は、船速を低下させるため燃費の低下を招くため、定期的にドック入りして藻類除去等のメンテナンスが要求され、船艇の稼働率の低下やメンテナンス費用が生じる等の問題もある。 In general, problems with algae generation include, for example, aquariums for appreciation fish, water storage tanks, and piping for the circulation system of bathtubs. It may adversely affect the health of fish, cause water quality deterioration, and may cause health problems. In particular, in an aquarium equipped with a large observation transparent wall using a large-scale aquarium in recent years, the generation of algae on the transparent wall hinders observation, which is also a business problem. Further, even in a cooling plate for lowering the cooling water temperature in air conditioning equipment, there is a problem that algae are generated by water droplets generated on the surface of the cooling plate, and cooling efficiency is lowered. In addition, algae generated on the bottom of the ship cause a reduction in fuel consumption because the speed of the algae is reduced, so maintenance such as algae removal is required on a regular basis, resulting in a decrease in boat operation rate and maintenance costs. There are also problems such as.
これらの問題に対し、水を電気分解して銅イオンや銀イオンを溶解させたイオン水を生成させ該金属イオンによる殺藻及び藻類発生を抑制する方法が事業化されており、これら金属イオンを含むイオン水も殺藻剤として市販されている。また、船底塗料には、亜鉛その他の殺藻機能やフジツボ等の牡蠣類の付着防止機能を有する金属イオンを配合した塗料が使用されていたが、環境の悪化を招く問題もあり、銀イオン溶出させる塗料に替わってきている。更に、汎用的な水中微生物の低減方法として抗菌性第4級アンモニウム有機シランをコーティングする方法も提案されている(特許文献1)。
しかしながら、電解金属イオン水を用いる方法は、電気分解設備が必要であり、常時設備のンテナンスが必要となる問題を有しており、銀イオンを有する船底塗料の場合にも、銀イオンを常時溶出し続ける必要があるが、これには多量の塗料の塗布が必要となり、現実的ではないので、長期安定性は期待し難い。更に、特許文献1に記載の抗菌性有機シランを用いる方法は、該有機シランを対象物表面に化学的反応で結合させるものであるから、一旦コーティングさせれば物理的に表面層を剥離しない限り有効に作用する点で従来方とは基本的に異なっている。しかしながら、特許文献1の方法では、42%の高濃度の有機シランを脱イオン水で希釈して使用しているが、係る有機シランは不安定な化合物であり、水による希釈が容易ではなく、希釈中に該有機シランのポリマーが生成して白濁化するため任意の低濃度までの希釈が極めて困難であると共に、希釈された溶液も不安定であり、比較的短時間で白濁化して抗菌剤としての機能が著しく低下する問題がある。 However, the method using electrolytic metal ion water requires electrolysis equipment and has the problem that maintenance of the equipment is necessary at all times. Even in the case of ship bottom paints containing silver ions, silver ions are always eluted. However, this requires a large amount of paint to be applied and is not realistic, so it is difficult to expect long-term stability. Furthermore, since the method using the antibacterial organic silane described in Patent Document 1 is a method in which the organic silane is bonded to the surface of an object by a chemical reaction, once coating is performed, the surface layer is not physically peeled off. It is basically different from the conventional method in that it works effectively. However, in the method of Patent Document 1, a high concentration of 42% organic silane is diluted with deionized water and used, but such an organic silane is an unstable compound and is not easily diluted with water. Since the organic silane polymer is produced and becomes cloudy during dilution, it is extremely difficult to dilute to any low concentration, and the diluted solution is also unstable, and becomes cloudy in a relatively short time and becomes an antibacterial agent. As a result, there is a problem that the function as a remarkably lowered.
本発明は、係る従来技術に鑑み、メンテナンスが容易或いは不要な汎用性が高く且つ安価な藻類発生抑制剤と藻類発生抑制方法を提供することを目的とするものである。 In view of the related art, an object of the present invention is to provide an algae generation inhibitor and a method for suppressing algae generation that are easy or unnecessary to maintain and have high versatility and are inexpensive.
本発明者らは、上記課題を解決すべく鋭意検討を行った結果、特定の抗菌性能を有する有機シラン化合物を物品の表面に塗布することによって、物品表面の水に接する部分の藻類の発生を長期にわたって効果的にかつ簡便に抑制できることを見出し、本発明の完成に至った。 As a result of intensive studies to solve the above-mentioned problems, the present inventors applied the organosilane compound having a specific antibacterial performance to the surface of the article, thereby generating algae in the part in contact with water on the article surface. It has been found that it can be effectively and easily suppressed over a long period of time, and the present invention has been completed.
すなわち、本発明の藻類発生抑制剤は、物品の表面における藻類の発生を抑制する藻類発生抑制剤であって、
(a)一般式(1)
(b)陽イオン界面活性剤(ただし、前記ケイ素化合物を除く)(b1)、非イオン界面活性剤(b2)および両イオン界面活性剤(b3)からなる群から選ばれた少なくとも1種の界面活性剤によって、
水中に均一に分散させてなることを特徴とする。
That is, the algae generation inhibitor of the present invention is an algae generation inhibitor that suppresses the generation of algae on the surface of an article,
(A) General formula (1)
(B) At least one interface selected from the group consisting of cationic surfactants (excluding the silicon compound) (b1), nonionic surfactant (b2) and amphoteric surfactant (b3) Depending on the active agent
It is characterized by being uniformly dispersed in water.
本発明の藻類発生抑制剤の他の好適例において、前記一般式(1)で表されるケイ素含有化合物(a)のR1は炭素原子数10〜25のアルキル基を示し、R2およびR3は同一または異なっていてもよい炭素原子数1ないし6の低級アルキル基を示し、R4は炭素原子数1ないし6の低級アルキレン基を示し、R5、R6およびR7は同一または異なっていてもよい炭素原子数1ないし6の低級アルキル基またはアルコシ基を示し、Xはハロゲンイオンまたは有機カルボキニルオキシイオンであることを特徴とする。 In another preferred embodiment of the algal development inhibitor of the present invention, R1 of the silicon-containing compound (a) represented by the general formula (1) represents an alkyl group having 10 to 25 carbon atoms, and R2 and R3 are the same. Or a lower alkyl group having 1 to 6 carbon atoms which may be different; R4 represents a lower alkylene group having 1 to 6 carbon atoms; and R5, R6 and R7 may be the same or different. 1 to 6 lower alkyl groups or alkoxy groups, wherein X is a halogen ion or an organic carboquinyloxy ion.
本発明の藻類発生抑制剤の他の好適例において、前記一般式(1)で表されるケイ素含有化合物(a)が、オクタデシルジメチル(3−トリメトキシシリルプロピル)アンモニムクロライド、オクタデシルジエチル(3−トリメトキシシリルプロピル)アンモニウムクロライド、オクタデシルジメチル(2−トリメチルシリルエチル)アンモニウムクロライド、オクタデシルジプロピル(4−トリメトキシシリルブチル)アンモニムアセテート、オクタデシルジメチル(3−トリエトキシシリルプロビル)アンモニウムクロライド、オクタデシルジメチル(3−トリイソプロポキシシリルプロビル)アンモニウムクロライド、オクタデシルジメチル(3−トリエチルシシリルプロビル)アンモニウムクロライド、オクタデシルジメチル(3−トリイソプロピルシシリルプロビル)アンモニウムクロライド、ヘプタデシルジメチル(3−トリメトキシシリルプロピル)アンモニウムクロライド、ヘプタデシルジイソプロピル(2−トリエトキシシリルエチル)アンモニウムクロライド、ヘキサデシルジメチル(3−トリメトキシシリルプロピル)アンモニムクロライド、ヘキサデシルジメチル(3−トリメトキシシリルプロピル)アンモニムアセテートおよびペンタサデシルジメチル(3−トリエトキシシリルプロピル)アンモニムクロライドからなる群から選ばれた少なくとも1種のケイ素含有化合物であることを特徴とする。これらの中でも、オクタデシルジメチル(3−トリメトキシシリルプロピル)アンモニウムクロライドが好ましい。 In another preferred embodiment of the algal development inhibitor of the present invention, the silicon-containing compound (a) represented by the general formula (1) is octadecyldimethyl (3-trimethoxysilylpropyl) ammonium chloride, octadecyldiethyl (3 -Trimethoxysilylpropyl) ammonium chloride, octadecyldimethyl (2-trimethylsilylethyl) ammonium chloride, octadecyldipropyl (4-trimethoxysilylbutyl) ammonium acetate, octadecyldimethyl (3-triethoxysilylpropyl) ammonium chloride, octadecyl Dimethyl (3-triisopropoxysilylpropyl) ammonium chloride, octadecyldimethyl (3-triethylsilylsilylpropyl) ammonium chloride, octadecyldimethyl (3- Riisopropylsisilylpropyl) ammonium chloride, heptadecyldimethyl (3-trimethoxysilylpropyl) ammonium chloride, heptadecyldiisopropyl (2-triethoxysilylethyl) ammonium chloride, hexadecyldimethyl (3-trimethoxysilylpropyl) ammoni It is at least one silicon-containing compound selected from the group consisting of muchloride, hexadecyldimethyl (3-trimethoxysilylpropyl) ammonium acetate, and pentasadecyldimethyl (3-triethoxysilylpropyl) ammonium chloride. Features. Among these, octadecyldimethyl (3-trimethoxysilylpropyl) ammonium chloride is preferable.
本発明の藻類発生抑制剤の他の好適例において、前記陽イオン界面活性剤(b1)が、下記一般式(2)
本発明の藻類発生抑制剤の他の好適例において、前記一般式(2)で表される前記陽イオン界面活性剤(b11)のR11は炭素原子数10〜25のアルキル基を示し、R12、R13およびR14は同一または異なっていてもよい炭素原子数1ないし6の低級アルキル基を示し、Yがハロゲンイオンまたは有機カルボニルオキシイオンであることを特徴とする。 In another preferable example of the algal generation inhibitor of the present invention, R11 of the cationic surfactant (b11) represented by the general formula (2) represents an alkyl group having 10 to 25 carbon atoms, and R12, R13 and R14 each represent a lower alkyl group having 1 to 6 carbon atoms which may be the same or different, and Y is a halogen ion or an organic carbonyloxy ion.
本発明の藻類発生抑制剤の他の好適例において、前記陽イオン界面活性剤(b11)がデシルトリメチルアンモニウムクロライド、デシルトリエチルアンモニウムアセテート、ドデシルトリメチルアンモニウムアセテート、ドデシルトリイソプロピルアンモニウムブロマイド、トリデシルトリエチルアンモニウムプロマイド、テトラデシルトリメチルアンモニウムクロライド、テトラデシルトリエチルアンモニウムクロライド、テトラデシルトリ−n−プロピルアンモニウムクロライド、ペンタデシルトリメチルアンモニウムクロライド、ペンタデシルトリエチルアンモニウムクロライド、ペンタデシルトリ−n−プロピルアンモニウムクロライド、ヘキサデシルトリメチルアンモニウムクロライド、ヘキサデシルトリエチルアンモニウムクロライド、ヘキサデシルトリ−n−プロピルアンモニウムクロライド、オクタデシルトリメチルアンモニウムクロライドおよびオクタデシルトリエチルアンモニウムクロライドおよびオクタデシルトリ−n−プロピルアンモニウムクロライドからなる群から選ばれた少なくとも1種であることを特徴とする。これらの中でも、ヘキサデシルトリメチルアンモニウムクロライドが好ましい。 In another preferred embodiment of the algal development inhibitor of the present invention, the cationic surfactant (b11) is decyltrimethylammonium chloride, decyltriethylammonium acetate, dodecyltrimethylammonium acetate, dodecyltriisopropylammonium bromide, tridecyltriethylammonium promide. , Tetradecyltrimethylammonium chloride, tetradecyltriethylammonium chloride, tetradecyltri-n-propylammonium chloride, pentadecyltrimethylammonium chloride, pentadecyltriethylammonium chloride, pentadecyltri-n-propylammonium chloride, hexadecyltrimethylammonium chloride , Hexadecyltriethylammonium chloride Ride, characterized in that it is at least one selected from hexadecyltrimethylammonium -n- propyl ammonium chloride, octadecyl trimethyl ammonium chloride and octadecyl triethyl ammonium chloride and octadecyl tri -n- propyl ammonium chloride group consisting ride. Among these, hexadecyltrimethylammonium chloride is preferable.
本発明の藻類発生抑制剤の他の好適例において、前記陽イオン界面活性剤(b1)が、N−ココイル−アルギニンエチルエステルピリドンカルボン酸塩(b12)であることを特徴とする。 In another preferred embodiment of the algal development inhibitor of the present invention, the cationic surfactant (b1) is N-cocoyl-arginine ethyl ester pyridonecarboxylate (b12).
本発明の藻類発生抑制剤の他の好適例において、前記非イオン界面活性剤(b2)が、ポリオキシエチレン単位および/またはポリオキシプロピレン単位を含有するポリオキシアルキレングリコールのアルキルエーテルまたは脂肪酸エステル、ソルビタン脂肪酸エステル、脂肪酸モノグリセライド、脂肪酸エステル、脂肪酸アルカノールアミド、脂肪酸アミド、アルキルエーテル、アルキルアミンオキシド、ポリオキシエチレンアルキルエーテル及びポリオキシエチレンノニルフェニルエーテルからなる群から選ばれた少なくとも1種の非イオン系界面活性剤であることを特徴とする。これらの中でも、ポリオキシエチレンソルビタンモノラウレートが好ましい。 In another preferred embodiment of the algal development inhibitor of the present invention, the nonionic surfactant (b2) is a polyoxyalkylene glycol alkyl ether or fatty acid ester containing a polyoxyethylene unit and / or a polyoxypropylene unit, At least one nonionic system selected from the group consisting of sorbitan fatty acid ester, fatty acid monoglyceride, fatty acid ester, fatty acid alkanolamide, fatty acid amide, alkyl ether, alkylamine oxide, polyoxyethylene alkyl ether and polyoxyethylene nonylphenyl ether It is characterized by being a surfactant. Among these, polyoxyethylene sorbitan monolaurate is preferable.
本発明の藻類発生抑制剤の他の好適例において、前記両イオン界面活性剤(b3)は、ベタイン系およびアミンオキサイド系からなる群から選ばれた少なくとも1種であることを特徴とする。これらの中でも、ラウラミドプロピルジメチルアミンオキサイドが好ましい。 In another preferred embodiment of the algal development inhibitor of the present invention, the amphoteric surfactant (b3) is at least one selected from the group consisting of betaine and amine oxides. Among these, lauramidopropyldimethylamine oxide is preferable.
本発明の藻類発生抑制剤の他の好適例において、前記ケイ素含有化合物(a)としてオクタデシルジメチル(3−トリメトキシシリルプロピル)アンモニウムクロライド、および前記陽イオン界面活性剤(b1)としてヘキサデシルトリメチルアンモニウムクロライドを含有することを特徴とする。 In another preferred embodiment of the algal development inhibitor of the present invention, octadecyldimethyl (3-trimethoxysilylpropyl) ammonium chloride is used as the silicon-containing compound (a), and hexadecyltrimethylammonium is used as the cationic surfactant (b1). It contains chloride.
本発明の藻類発生抑制剤の他の好適例において、前記ケイ素含有化合物(a)としてオクタデシルジメチル(3−トリメトキシシリルプロピル)アンモニウムクロライド、および前記非イオン界面活性剤(b2)としてポリオキシエチレンソルビタンモノラウレートを含有することを特徴とする。 In another preferred embodiment of the algal development inhibitor of the present invention, octadecyldimethyl (3-trimethoxysilylpropyl) ammonium chloride is used as the silicon-containing compound (a), and polyoxyethylene sorbitan is used as the nonionic surfactant (b2). It contains monolaurate.
本発明の藻類発生抑制剤の他の好適例において、前記ケイ素含有化合物(a)としてオクタデシルジメチル(3−トリメトキシシリルプロピル)アンモニウムクロライド、および前記両イオン界面活性剤(b3)としてラウラミドプロピルジメチルアミンオキサイドを含有することを特徴とする。 In another preferred embodiment of the algal development inhibitor of the present invention, octadecyldimethyl (3-trimethoxysilylpropyl) ammonium chloride is used as the silicon-containing compound (a), and lauramidopropyldimethyl is used as the amphoteric surfactant (b3). It contains an amine oxide.
また、本発明の藻類発生抑制処理方法は、物品の表面における藻類の発生を抑制するための処理方法であって、上記藻類発生抑制剤を該物品の表面に塗布することを特徴とする。 The algae generation suppression treatment method of the present invention is a treatment method for suppressing the generation of algae on the surface of an article, wherein the algae generation inhibitor is applied to the surface of the article.
本発明の藻類発生抑制処理方法の好適例において、前記物品の表面に前記藻類発生抑制剤を塗布する前に、該物品の表面をオゾン水、プラズマ又は電磁波照射の処理をする工程を含むことを特徴とする。 In a preferred embodiment of the method for suppressing algae generation according to the present invention, the method includes a step of treating the surface of the article with ozone water, plasma or electromagnetic wave irradiation before applying the algae generation inhibitor on the surface of the article. Features.
本発明の藻類発生抑制処理方法の他の好適例において、前記物品の表面に前記藻類発生抑制剤を塗布した後に、該藻類発生抑制剤が該物品の表面に液状で存在する状態で、電磁波の照射処理をすることを特徴とする。 In another preferred embodiment of the method for inhibiting algae generation according to the present invention, after the algae generation inhibitor is applied to the surface of the article, the algae generation inhibitor is present in a liquid state on the surface of the article. Irradiation processing is performed.
本発明の藻類発生抑制処理方法の他の好適例において、前記物品が、水槽、貯水槽、空調設備、冷却水の給排水配管、又は浴槽の循環系統の配管であることを特徴とする。 In another preferred embodiment of the method for inhibiting algae generation according to the present invention, the article is a water tank, a water tank, an air conditioner, a cooling water supply / drain pipe, or a bathtub circulation system pipe.
本発明によれば、メンテナンスが容易或いは不要な汎用性が高く且つ安価な藻類発生抑制剤と藻類発生抑制処理方法を提供できるという有利な効果を奏する。 ADVANTAGE OF THE INVENTION According to this invention, there exists an advantageous effect that an algae generation | occurrence | production inhibitor and an algae generation | occurrence | production suppression processing method with high versatility which are easy or needless maintenance are inexpensive can be provided.
以下、本発明を詳細に説明する。本発明の藻類発生抑制剤は、物品の表面における藻類の発生を抑制する藻類発生抑制剤であって、
(a)一般式(1)
(b)陽イオン界面活性剤(ただし、前記ケイ素化合物を除く)(b1)、非イオン界面活性剤(b2)および両イオン界面活性剤(b3)からなる群から選ばれた少なくとも1種の界面活性剤によって、
水中に均一に分散させてなることを特徴とする。前記ケイ素含有化合物を上記界面活性剤によって水中に均一に分散させた藻類発生抑制剤を物品の表面に塗布することによって、上記ケイ素含有化合物の膜が該物品の表面に効果的に被覆される結果、塗布した物品の表面が長期にわたって水と接触していても、その表面や接触している水において藻類が発生するのを抑制することができ、そのためメンテナンスが容易又は不要となる。また、上記ケイ素含有化合物の膜が物品表面に存在していても、魚やヒトなどの動物に対して悪影響を及ぼすことがないため、安全性が高い。また、本発明の藻類発生抑制剤は安価に製造することができ、藻類発生抑制効果が高く、1回の塗布で藻類発生抑制効果が長期間にわたって持続するため、従来と比べてコストを減らすことができる。
Hereinafter, the present invention will be described in detail. The algae generation inhibitor of the present invention is an algae generation inhibitor that suppresses the generation of algae on the surface of an article,
(A) General formula (1)
(B) At least one interface selected from the group consisting of cationic surfactants (excluding the silicon compound) (b1), nonionic surfactant (b2) and amphoteric surfactant (b3) Depending on the active agent
It is characterized by being uniformly dispersed in water. Application of the algae generation inhibitor in which the silicon-containing compound is uniformly dispersed in water using the surfactant to effectively coat the silicon-containing compound film on the surface of the article. Even if the surface of the applied article has been in contact with water for a long time, it is possible to suppress the generation of algae on the surface or in contact with water, so that maintenance is easy or unnecessary. In addition, even if the film of the silicon-containing compound is present on the surface of the article, it does not adversely affect animals such as fish and humans, so that safety is high. In addition, the algae generation inhibitor of the present invention can be produced at low cost, has a high algae generation inhibitory effect, and maintains the algae generation inhibitory effect for a long period of time with a single application. Can do.
本発明の藻類発生抑制剤の構成成分について、以下に詳細に説明する。本発明の藻類発生抑制剤に含まれる抗菌成分であるケイ素含有化合物(a)は一般式(1)
さらに、上記一般式(1)で表されるケイ素含有化合物(a)のうちで、好ましい態様は、上記一般式(1)のR1は炭素原子数10ないし25のアルキル基を示し、R2およびR3は同一または異なっていてもよい炭素原子数1ないし6の低級アルキル基を示し、R4は炭素原子数1ないし6の低級アルキレン基を示し、R5、R6およびR7は同一または異なっていてもよい炭素原子数1ないし6の低級アルキル基または低級アルコシ基を示し、Xはハロゲンイオンまたは有機カルボニルオキシイオン(有機カルボン酸イオン)であるケイ素含有化合物である。 Further, among the silicon-containing compounds (a) represented by the general formula (1), a preferred embodiment is that R1 in the general formula (1) represents an alkyl group having 10 to 25 carbon atoms, and R2 and R3 Represents a lower alkyl group having 1 to 6 carbon atoms which may be the same or different, R4 represents a lower alkylene group having 1 to 6 carbon atoms, and R5, R6 and R7 may be the same or different carbons. A lower alkyl group having 1 to 6 atoms or a lower alkoxy group is shown, and X is a silicon-containing compound which is a halogen ion or an organic carbonyloxy ion (organic carboxylate ion).
R1の炭素原子数6以上の炭化水素基としては、ヘキシル基、ヘプチル基、オクチル基、ノニル基、デシル基、ウンデシル基、ドデシル基、トリデシル基、テトラデシル基、ペンタデシル基、ヘキサデシル基、ヘプタデシル基、オクタデシル基、ノナデシル基、エイコシル基、ウンエイコシル基、ドエイコシル基、トリエイコシル基、テトラエイコシル基、ペンタエイコシル基などが例示できる。 Examples of the hydrocarbon group having 6 or more carbon atoms of R1 include hexyl, heptyl, octyl, nonyl, decyl, undecyl, dodecyl, tridecyl, tetradecyl, pentadecyl, hexadecyl, heptadecyl, Examples include octadecyl group, nonadecyl group, eicosyl group, uneicosyl group, doeicosyl group, trieicosyl group, tetraeicosyl group, pentaeicosyl group and the like.
R2およびR3の同一または異なっていてもよい低級炭化水素基としては、たとえば、メチル基、エチル基、プロピル基、イソプロピル基、ブチル基、ペンチル基、へキシル基、シクロヘクシル基、フェニル基、トリル基などを例示することができる。 Examples of the lower hydrocarbon group which may be the same or different for R2 and R3 include, for example, methyl group, ethyl group, propyl group, isopropyl group, butyl group, pentyl group, hexyl group, cyclohexyl group, phenyl group, and tolyl group. Etc. can be illustrated.
R4の低級アルキレン基としては、メチレン基、エチレン基、トリメチレン基、テトラメチレン基、ヘキサメチレン基などを例示できる。 Examples of the lower alkylene group for R4 include a methylene group, an ethylene group, a trimethylene group, a tetramethylene group, and a hexamethylene group.
R5、R6およびR7は同一または異なっていてもよい低級アルキル基または低級アルコシ基であり、具体的には、メトキシ基、エトキシ基、プロポキシ基、イソプロポキシ基、ブトキシ基、ペンチルオキシ基、へキシルオキシ基、メチル基、エチル基、プロピル基、イソプロピル基、ブチル基、ペンチル基、へキシル基などを例示できる。 R5, R6 and R7 are the same or different lower alkyl group or lower alkoxy group, and specifically include methoxy group, ethoxy group, propoxy group, isopropoxy group, butoxy group, pentyloxy group, hexyloxy Examples thereof include a group, a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, a pentyl group, and a hexyl group.
Xとしては塩素イオン、臭素イオンなどのハロゲンイオン、メチルカルボニルオキシイオン(アセテートイオン)、エチルカルボニルオキシイオン(プロピオネートイオン)、フェニルカルボニルオキシイオン(ベンゾエートイオン)などの有機カルボニルオキシイオン(有機カルボン酸イオン)を例示することができる。 X is a halogen ion such as chlorine ion or bromine ion, an organic carbonyloxy ion (organic carboxyl) such as methylcarbonyloxy ion (acetate ion), ethylcarbonyloxy ion (propionate ion), phenylcarbonyloxy ion (benzoate ion), etc. Acid ion).
ケイ素含有化合物(a)として具体的には、次の化合物を例示することができる。オクタデシルジメチル(3−トリメトキシシリルプロピル)アンモニムクロライド、オクタデシルジエチル(3−トリメトキシシリルプロピル)アンモニウムクロライド、オクタデシルジメチル(2−トリメチルシリルエチル)アンモニウムクロライド、オクタデシルジプロピル(4−トリメトキシシリルブチル)アンモニムアセテート、オクタデシルジメチル(3−トリエトキシシリルプロビル)アンモニウムクロライド、オクタデシルジメチル(3−トリイソプロポキシシリルプロビル)アンモニウムクロライド、オクタデシルジメチル(3−トリエチルシシリルプロビル)アンモニウムクロライド、オクタデシルジメチル(3−トリイソプロピルシシリルプロビル)アンモニウムクロライド、ヘプタデシルジメチル(3−トリメトキシシリルプロピル)アンモニウムクロライド、ヘプタデシルジイソプロピル(2−トリエトキシシリルエチル)アンモニウムクロライド、ヘキサデシルジメチル(3−トリメトキシシリルプロピル)アンモニムクロライド、ヘキサデシルジメチル(3−トリメトキシシリルプロピル)アンモニムアセテート、ペンタサデシルジメチル(3−トリエトキシシリルプロピル)アンモニムクロライド。 Specific examples of the silicon-containing compound (a) include the following compounds. Octadecyldimethyl (3-trimethoxysilylpropyl) ammonium chloride, octadecyldiethyl (3-trimethoxysilylpropyl) ammonium chloride, octadecyldimethyl (2-trimethylsilylethyl) ammonium chloride, octadecyldipropyl (4-trimethoxysilylbutyl) ammonium Acetate, octadecyldimethyl (3-triethoxysilylpropyl) ammonium chloride, octadecyldimethyl (3-triisopropoxysilylpropyl) ammonium chloride, octadecyldimethyl (3-triethylsilylsilylpropyl) ammonium chloride, octadecyldimethyl (3 -Triisopropylsilylsilyl) ammonium chloride, heptadecyldimethyl (3-trimethoxy) Rylpropyl) ammonium chloride, heptadecyldiisopropyl (2-triethoxysilylethyl) ammonium chloride, hexadecyldimethyl (3-trimethoxysilylpropyl) ammonium chloride, hexadecyldimethyl (3-trimethoxysilylpropyl) ammonium acetate, pentasa Decyldimethyl (3-triethoxysilylpropyl) ammonium chloride.
本発明の藻類発生抑制剤は、上記ケイ素含有化合物の他にも、陽イオン界面活性剤(ただし、上記ケイ素含有化合物を除く)(b1)、非イオン界面活性剤(b2)および両イオン界面活性剤(b3)からなる群から選ばれた少なくとも1種の界面活性剤を含有する。 In addition to the silicon-containing compound, the algal development inhibitor of the present invention includes a cationic surfactant (except for the silicon-containing compound) (b1), a nonionic surfactant (b2), and a zwitterionic surfactant. Containing at least one surfactant selected from the group consisting of the agent (b3).
上記陽イオン界面活性剤(b)は、下記一般式(2)で表される陽イオン界面活性剤であり、ただし、上記ケイ素化合物(a)を除く陽イオン界面活性剤(b11)である。 The cationic surfactant (b) is a cationic surfactant represented by the following general formula (2), provided that it is a cationic surfactant (b11) excluding the silicon compound (a).
(式中、R11は炭素原子数6以上の炭化水素基を示し、R12、R13およびR14は同一でも異なってもよい低級炭化水素基を示す。)で表される陽イオン界面活性剤(b11)またはN−ココイル−アルギニンエチルエステルピリドンカルボン酸塩(12)であることが好ましい。 (Wherein R11 represents a hydrocarbon group having 6 or more carbon atoms, and R12, R13 and R14 represent the same or different lower hydrocarbon groups.) Or it is preferable that it is N-cocoyl-arginine ethyl ester pyridone carboxylate (12).
さらに、上記一般式(2)で表される陽イオン界面活性剤(b11)のうちでは、R11は炭素原子数10ないし25のアルキル基を示し、R12、R13およびR14は同一または異なっていてもよい炭素原子数1ないし6の低級アルキル基を示し、Yがハロゲンイオンまたは有機カルボニルオキシイオン(有機カルボン酸イオン)であることが好ましい。 Furthermore, among the cationic surfactants (b11) represented by the general formula (2), R11 represents an alkyl group having 10 to 25 carbon atoms, and R12, R13 and R14 may be the same or different. It is preferably a lower alkyl group having 1 to 6 carbon atoms, and Y is preferably a halogen ion or an organic carbonyloxy ion (organic carboxylate ion).
上記一般式(2)で表される陽イオン界面活性剤(b11)の炭素原子数6以上の炭化水素基R11としては、上記ケイ素含有化合物(a)の一般式(1)のR1として例示した炭素原子数6以上の炭化水素基を同様に例示することができる。 The hydrocarbon group R11 having 6 or more carbon atoms of the cationic surfactant (b11) represented by the general formula (2) is exemplified as R1 of the general formula (1) of the silicon-containing compound (a). Similarly, hydrocarbon groups having 6 or more carbon atoms can be exemplified.
上記一般式(2)で表される陽イオン界面活性剤(b11)のR12、R13およびR14としては、上記ケイ素含有化合物(a)の一般式(1)のR2およびR3として例示した低級炭化水素基を同様に例示することができる。 R12, R13 and R14 of the cationic surfactant (b11) represented by the general formula (2) are the lower hydrocarbons exemplified as R2 and R3 of the general formula (1) of the silicon-containing compound (a). Groups can be exemplified as well.
上記一般式(2)で表される陽イオン界面活性剤(b11)として具体的には、次の化合物を例示することができる。すなわち、デシルトリメチルアンモニウムクロライド、デシルトリエチルアンモニウムアセテート、ドデシルトリメチルアンモニウムアセテート、ドデシルトリイソプロピルアンモニウムブロマイド、トリデシルトリエチルアンモニウムプロマイド、テトラデシルトリメチルアンモニウムクロライド、テトラデシルトリエチルアンモニウムクロライド、テトラデシルトリ−n−プロピルアンモニウムクロライド、ペンタデシルトリメチルアンモニウムクロライド、ペンタデシルトリエチルアンモニウムクロライド、ペンタデシルトリ−n−プロピルアンモニウムクロライド、ヘキサデシルトリメチルアンモニウムクロライド、ヘキサデシルトリエチルアンモニウムクロライド、ヘキサデシルトリ−n−プロピルアンモニウムクロライド、オクタデシルトリメチルアンモニウムクロライド、オクタデシルトリエチルアンモニウムクロライド、オクタデシルトリ−n−プロピルアンモニウムクロライドなどを挙げることができ、とりわけヘキサデシルトリメチルアンモニウムは最も好適である。 Specific examples of the cationic surfactant (b11) represented by the general formula (2) include the following compounds. Decyltrimethylammonium chloride, decyltriethylammonium acetate, dodecyltrimethylammonium acetate, dodecyltriisopropylammonium bromide, tridecyltriethylammonium promide, tetradecyltrimethylammonium chloride, tetradecyltriethylammonium chloride, tetradecyltri-n-propylammonium chloride , Pentadecyltrimethylammonium chloride, pentadecyltriethylammonium chloride, pentadecyltri-n-propylammonium chloride, hexadecyltrimethylammonium chloride, hexadecyltriethylammonium chloride, hexadecyltri-n-propylammonium chloride, oct Decyl trimethyl ammonium chloride, octadecyl triethyl ammonium chloride, it can be mentioned octadecyl tri -n- propyl ammonium chloride, especially hexadecyl trimethyl ammonium is most preferred.
上記非イオン界面活性剤(b2)は、ポリオキシエチレン単位または/ポリオキシプロピレン単位を含有するポリオキシアルキレングリコールのアルキルエーテルまたは脂肪酸エステル、ソルビタン脂肪酸エステル、脂肪酸モノグリセライド、脂肪酸アルカノールアミド、脂肪酸アミド、アルキルエーテル、アルキルアミンオキシド、ポリオキシエチレンアルキルエーテル及びポリオキシエチレンノニルフェニルエーテルからなる群から選ばれた少なくとも1種の非イオン系界面活性剤である。 The nonionic surfactant (b2) includes polyoxyethylene units or polyoxyalkylene glycol alkyl ethers or fatty acid esters, sorbitan fatty acid esters, fatty acid monoglycerides, fatty acid alkanolamides, fatty acid amides, alkyls containing polyoxyethylene units. It is at least one nonionic surfactant selected from the group consisting of ether, alkylamine oxide, polyoxyethylene alkyl ether and polyoxyethylene nonylphenyl ether.
上記非イオン系界面活性剤(b2)として具体的には、ポリエチレングリコールのモノアルキルエーテル、ポリオキシエチレン単位とポリオキシプロピレン単位の両方を含有するポリアルキレングリコールのモノアルキルエーテル、ソルビタンラウリレート、ポリオキシエチレンソルビタンモノラウレート、脂肪酸モノグリセライド、脂肪酸エステル、脂肪酸アルカノールアミド、脂肪酸アミド、アルキルエーテル、アルキルアミンオキシド、ポリオキシエチレンアルキルエーテル及びポリオキシエチレンノニルフェニルエーテルからなる群から選ばれた少なくとも1種の非イオン系界面活性剤を例示できる。 Specific examples of the nonionic surfactant (b2) include a monoalkyl ether of polyethylene glycol, a monoalkyl ether of polyalkylene glycol containing both polyoxyethylene units and polyoxypropylene units, sorbitan laurate, poly At least one selected from the group consisting of oxyethylene sorbitan monolaurate, fatty acid monoglyceride, fatty acid ester, fatty acid alkanolamide, fatty acid amide, alkyl ether, alkylamine oxide, polyoxyethylene alkyl ether and polyoxyethylene nonylphenyl ether Nonionic surfactants can be exemplified.
より詳細には、非イオン性界面活性剤としては、ソルビタンモノラウレート、ソルビタンセスキイソステアレート等のソルビタン脂肪酸エステル;グリセリンモノオレート、グリセリンモノイソステアレート等のグリセリン脂肪酸エステル;ジグリセリルモノオレート、デカグリセリルジイソステアレート等のポリグリセリン脂肪酸エステル;ポリオキシエチレンソルビタンモノオレート、ポリオキシエチレンソルビタンモノオレート等のポリオキシエチレンソルビタン脂肪酸エステル;ポリオキシエチレンソルビットモノラウレート、ポリオキシエチレンソルビットテトラオレート等のポリオキシエチレンソルビット脂肪酸エステル;ポリオキシエチレングリセリルモノオレート、ポリオキシエチレングリセリルモノオレート等のポリオキシエチレングリセリン脂肪酸エステル;ポリオキシエチレンモノイソステアレート、ポリオキシエチレンモノオレート等のポリエチレングリコール脂肪酸エステル;ポリオキシエチレンジイソステアレート、ポリオキシエチレンジイソステアレート等のポリエチレングリコールジ脂肪酸エステル;ポリオキシエチレンオレイルエーテル、ポリオキシエチレンオレイルエーテル(10E.O.)等のポリオキシエチレンアルキルエーテル;ポリオキシエチレンポリオキシプロピレンアルキルエーテル等が挙げられる。これらの中でもとりわけポリオキシエチレンソルビタンモノラウレートは最も好適である。 More specifically, as the nonionic surfactant, sorbitan fatty acid esters such as sorbitan monolaurate and sorbitan sesquiisostearate; glycerin fatty acid esters such as glycerol monooleate and glycerol monoisostearate; diglyceryl monooleate, Polyglycerin fatty acid esters such as decaglyceryl diisostearate; polyoxyethylene sorbitan fatty acid esters such as polyoxyethylene sorbitan monooleate and polyoxyethylene sorbitan monooleate; polyoxyethylene sorbite monolaurate, polyoxyethylene sorbite tetraoleate and the like Polyoxyethylene sorbite fatty acid ester of polyoxyethylene glyceryl monooleate, polyoxyethylene glyceryl monooleate, etc. Polyethylene glycol fatty acid esters such as polyoxyethylene monoisostearate and polyoxyethylene monooleate; Polyethylene glycol difatty acid esters such as polyoxyethylene diisostearate and polyoxyethylene diisostearate; Polyoxy Polyoxyethylene alkyl ethers such as ethylene oleyl ether and polyoxyethylene oleyl ether (10E.O.); polyoxyethylene polyoxypropylene alkyl ethers and the like. Among these, polyoxyethylene sorbitan monolaurate is most preferable.
上記両イオン界面活性剤(b3)としては、ベタイン系、アミンオキサイド系からなる群から選ばれた少なくとも1種がある。 The amphoteric surfactant (b3) includes at least one selected from the group consisting of betaine and amine oxides.
具体的には、ベタイン系両イオン界面活性剤としては、例えば、ココ脂肪酸アミドプロピルカルボキシベタイン、ラウリルジメチルアミノ酢酸ベタイン、イミダゾリウムベタインなどが挙げられる。これらの中でも、溶液中の抗菌成分である上記ケイ素含有化合物の安定性の観点から、ココ脂肪酸アミドプロピルカルボキシベタイン、ラウリルジメチルアミノ酢酸ベタインが好ましい。 Specifically, examples of the betaine zwitterionic surfactant include coco fatty acid amidopropylcarboxybetaine, lauryldimethylaminoacetic acid betaine, and imidazolium betaine. Among these, coco fatty acid amidopropylcarboxybetaine and lauryldimethylaminoacetic acid betaine are preferable from the viewpoint of stability of the silicon-containing compound which is an antibacterial component in the solution.
アミンオキサイド系両イオン界面活性剤としては、例えば、ラウラミドプロピルジメチルアミンオキサイド、ラウリルジメチルアミンオキサイドなどが挙げられる。これらの中でも、溶液中の抗菌成分である上記ケイ素含有化合物の安定性の観点から、ラウラミドプロピルジメチルアミンオキサイドが好ましい。特に、上述したベタイン系及びアミンオキサイド系両イオン界面活性剤の中でも、溶液中での上記ケイ素含有化合物の長期間の安定性の観点から、ラウラミドプロピルジメチルアミンオキサイドが好ましい。 Examples of the amine oxide zwitterionic surfactant include lauramidopropyldimethylamine oxide and lauryldimethylamine oxide. Among these, lauramidopropyldimethylamine oxide is preferable from the viewpoint of stability of the silicon-containing compound that is an antibacterial component in the solution. In particular, among the above-described betaine-based and amine oxide-based surfactants, lauramidopropyldimethylamine oxide is preferable from the viewpoint of long-term stability of the silicon-containing compound in a solution.
本発明の藻類発生抑制剤の溶媒としては、通常水溶液が採用されるが、上記ケイ素含有化合物(a)、陽イオン界面活性剤(b1)および/または非イオン界面活性剤(b2)および/または両イオン界面活性剤(b3)が溶解する限り、水とメタノール、エタノール、プロパノール、アセトンなどの親水性溶媒との混合溶媒として使用することができる。 As the solvent for the algal development inhibitor of the present invention, an aqueous solution is usually employed. However, the silicon-containing compound (a), the cationic surfactant (b1) and / or the nonionic surfactant (b2) and / or As long as the amphoteric surfactant (b3) is dissolved, it can be used as a mixed solvent of water and a hydrophilic solvent such as methanol, ethanol, propanol or acetone.
本発明の藻類発生抑制剤中のケイ素含有化合物(a)の含有量は通常0.01〜40容量%、好ましくは0.1〜10容量%であり、界面活性剤(b)の含有量は通常0.007〜20容量%であり、好ましくは0.05〜10容量%であり、藻類発生抑制作用およびその持続性を充分に発揮するにはこの範囲にあることが好ましい。 The content of the silicon-containing compound (a) in the algal development inhibitor of the present invention is usually 0.01 to 40% by volume, preferably 0.1 to 10% by volume, and the content of the surfactant (b) is usually 0.007 to 20%. The volume% is preferably 0.05 to 10% by volume, and it is preferably within this range in order to sufficiently exhibit the algae generation inhibiting action and its sustainability.
また、本発明の藻類発生抑制処理方法は、物品の表面における藻類の発生を抑制するための処理方法であって、上記の本発明の藻類発生抑制剤を該物品の表面に塗布することを特徴とする。本発明の方法では、物品表面に本発明の藻類発生抑制剤を塗布するだけで物品表面の藻類の発生を安全かつ長期にわたって抑制することができ、特別な化学反応の条件等が必要ではないので、簡便に本発明の方法を実施して、効果を得ることができる。 The algal generation suppression treatment method of the present invention is a treatment method for suppressing the generation of algae on the surface of an article, wherein the algal generation inhibitor of the present invention is applied to the surface of the article. And In the method of the present invention, it is possible to suppress the generation of algae on the surface of the article safely and for a long time just by applying the algae generation inhibitor of the present invention to the surface of the article, and no special chemical reaction conditions are required. By simply carrying out the method of the present invention, the effect can be obtained.
なお、上記ケイ素含有化合物はガラス、セラミックス等の材料への結合性は高いものの、プラスチック等の合成樹脂への結合性はあまり高くないことから、物品が合成樹脂からなる場合、物品を予めオゾン水、プラズマ又は電磁波照射の処理をした後、該処理された物品の表面に本発明の藻類発生抑制剤を塗布するか、又は先に前記藻類発生抑制剤を塗布し、次いで該藻類発生抑制剤が該物品の表面に液状で存在する状態で、電磁波照射の処理をすることが好ましい。このような前処理又は後処理を行うことによって、特に合成樹脂からなる物品の表面に上記藻類発生抑制剤に含まれる上記ケイ素含有化合物が結合しやすくなり、物品の表面に上記ケイ素含有化合物の膜がより良好に形成され、より効果的に物品表面における藻類の発生を抑制することができる。 The silicon-containing compound has high binding properties to materials such as glass and ceramics, but has low binding properties to synthetic resins such as plastics. After the treatment of plasma or electromagnetic wave irradiation, the algae generation inhibitor of the present invention is applied to the surface of the treated article, or the algae generation inhibitor is first applied, and then the algae generation inhibitor It is preferable to carry out the treatment of electromagnetic wave irradiation in a state of being present in a liquid state on the surface of the article. By performing such pre-treatment or post-treatment, the silicon-containing compound contained in the algae generation inhibitor is particularly easily bonded to the surface of an article made of a synthetic resin, and the silicon-containing compound film is formed on the surface of the article. Can be formed better and the generation of algae on the article surface can be more effectively suppressed.
上記オゾン水による処理は、特に制限されないが、例えば適宜濃度を調整したオゾン水に物品を浸漬するか、又は物品にオゾン水を噴霧するか、もしくは塗布するなどして物品の表面をオゾン水に接触させることによって行うことができる。オゾン水による処理時間は、使用するオゾン水の濃度によって適宜変更することができ、例えば、オゾンの濃度が0.4〜0.6ppmである場合、約5分間処理をすればよく、通常の数ppmの濃度のオゾン水の場合、約1分間処理すれば、本発明の藻類発生抑制剤によって効果的にケイ素含有化合物の膜が物品表面に形成されて、物品表面の藻類の発生を充分に抑制することができる。 The treatment with ozone water is not particularly limited. For example, the surface of the article is made into ozone water by immersing the article in ozone water whose concentration is adjusted appropriately, or spraying or applying ozone water to the article. This can be done by contacting. The treatment time with ozone water can be appropriately changed depending on the concentration of ozone water to be used. For example, when the ozone concentration is 0.4 to 0.6 ppm, the treatment may be performed for about 5 minutes. In the case of ozone water, if treated for about 1 minute, a film of a silicon-containing compound is effectively formed on the surface of the article by the algae generation inhibitor of the present invention, and the generation of algae on the article surface can be sufficiently suppressed. it can.
上記プラズマによる処理は、特に制限されないが、従来公知のプラズマ処理方法を用いて行うことができる。中でも、操作が容易で、処理効率が良く、市販の処理装置を使用できるという観点から、大気圧プラズマ処理方法が好ましい。大気圧プラズマ処理方法では、雰囲気ガスは大気であり、プラズマ処理装置に供給される作動ガスとしては空気が用いられるが、これらに限定されるものではなく、例えばアルゴン、ヘリウム、ネオンなどの不活性ガス、窒素ガスまたは酸素ガスを使用してもよい。 The treatment with plasma is not particularly limited, but can be performed using a conventionally known plasma treatment method. Among them, the atmospheric pressure plasma processing method is preferable from the viewpoint that the operation is easy, the processing efficiency is good, and a commercially available processing apparatus can be used. In the atmospheric pressure plasma processing method, the atmospheric gas is the atmosphere, and air is used as the working gas supplied to the plasma processing apparatus. However, the present invention is not limited to these. For example, argon, helium, neon and the like are inert. Gas, nitrogen gas or oxygen gas may be used.
プラズマ処理に用いる装置としては、市販の大気圧プラズマ処理装置を用いることができ、例えば、メイワフォーシス社製 SEDEプラズマソフトエッチャーが挙げられる。プラズマ照射の出力としては、1〜18Wと低出力で充分であり、この場合、処理時間は1分以上が好ましく、3分以上がより好ましいが、50W以上の高出力のものであれば、30秒以内の処理時間で充分な効果が得られる。また、工業用の数百〜数十キロワットの出力の装置も本発明におけるプラズマ処理に使用してもよい。 As an apparatus used for the plasma treatment, a commercially available atmospheric pressure plasma treatment apparatus can be used, and examples thereof include a SEDE plasma soft etcher manufactured by Meiwa Forsys. As the output of the plasma irradiation, a low output of 1 to 18 W is sufficient, and in this case, the treatment time is preferably 1 minute or more, more preferably 3 minutes or more, but if it has a high output of 50 W or more, 30 A sufficient effect can be obtained with a processing time of less than a second. An industrial device having an output of several hundred to several tens of kilowatts may also be used for the plasma treatment in the present invention.
上記のような方法によって物品をオゾン水又はプラズマで処理すると、ラジカルが発生し、物品の表面に含酸素官能基が生成して、上記藻類発生抑制剤中のケイ素含有化合物との反応性が向上することで、効果的にケイ素含有化合物の膜が物品表面に形成されて、未処理の場合と比較して、物品表面の藻類の発生をより抑制し得ることが考えられる。 When the article is treated with ozone water or plasma by the above method, radicals are generated, oxygen-containing functional groups are generated on the surface of the article, and the reactivity with the silicon-containing compound in the algae generation inhibitor is improved. By doing so, it is conceivable that a silicon-containing compound film is effectively formed on the surface of the article, and that the generation of algae on the article surface can be further suppressed as compared with the case where it is not treated.
また、上記電磁波照射処理は、特に制限されないが、電子レンジ内に物品を設置し、該電子レンジによりマイクロ波を照射することによって行うことができる。ここで、電子レンジとは、「高周波の電磁波を当てて食品を加熱する調理用装置」であり、一般的に2450MHzの波長のマイクロ波を照射して、食品を加熱する装置全般を含む。また、マイクロ波の照射方法としては、バッチ式、連続式のいずれの方法を用いてもよい。本発明に用いることができる電子レンジとしては、例えば、家庭用の電子レンジ、出力の高い業務用電子レンジ、工業用マイクロ波加速装置等を挙げることができる。なお、電子レンジの出力と処理時間について、上記藻類発生抑制剤の塗布を行う前には、出力700Wで30秒間処理することによって充分な効果を得ることができ、上記藻類発生抑制剤の塗布を行った後では、700Wでは20秒間、500Wでは30秒間で充分な効果を得ることができる。 The electromagnetic wave irradiation treatment is not particularly limited, but can be performed by placing an article in a microwave oven and irradiating microwaves with the microwave oven. Here, the microwave oven is a “cooking apparatus that heats food by applying high-frequency electromagnetic waves”, and generally includes an apparatus that heats food by irradiating microwaves with a wavelength of 2450 MHz. Further, as a microwave irradiation method, either a batch method or a continuous method may be used. Examples of the microwave oven that can be used in the present invention include a home microwave oven, a high-power commercial microwave oven, and an industrial microwave accelerator. In addition, about the output and processing time of a microwave oven, before performing the application of the algae generation inhibitor, a sufficient effect can be obtained by processing for 30 seconds at an output of 700 W. After performing, a sufficient effect can be obtained in 700 seconds for 20 seconds and 500 W in 30 seconds.
上述したオゾン水処理、プラズマ処理、電磁波照射処理のいずれを用いても本発明の効果が得られるが、オゾン水処理であれば、物品が大型のものでも容易に処理を行うことができ、物品を工場のラインで製造し、本発明の方法を用いて物品に藻類発生抑制処理を施す際に、ラインに組み込みやすい。電磁波照射処理の場合には、家庭用電子レンジでも本発明の効果が得られることから、家庭にて容易に本発明の方法を実施可能であるという利点がある。 The effect of the present invention can be obtained by using any of the above-described ozone water treatment, plasma treatment, and electromagnetic wave irradiation treatment. However, if the ozone water treatment is used, the article can be easily treated even if the article is large. Is manufactured on a factory line, and when the article is subjected to algae generation suppression treatment using the method of the present invention, it is easy to incorporate it into the line. In the case of the electromagnetic wave irradiation treatment, since the effect of the present invention can be obtained even in a home microwave oven, there is an advantage that the method of the present invention can be easily carried out at home.
物品表面への上記藻類発生抑制剤の塗布は、刷毛や布等を使用して行うことができ、特に制限されない。なお、上記藻類発生抑制剤の塗布を行った後に、必要に応じて水洗するなどして物品の表面から余剰な藻類発生抑制剤を除去してもよく、上記藻類発生抑制剤の塗布を行った後に電磁波照射処理する場合には、電磁波照射処理の後に藻類発生抑制剤の除去を行うことができる。 Application of the algae generation inhibitor to the surface of the article can be performed using a brush or cloth, and is not particularly limited. In addition, after applying the algae generation inhibitor, excess algae generation inhibitor may be removed from the surface of the article by washing with water as necessary, and the algae generation inhibitor was applied. In the case where the electromagnetic wave irradiation treatment is performed later, the algae generation inhibitor can be removed after the electromagnetic wave irradiation treatment.
本発明の藻類発生抑制処理方法において、対象となる物品としては、鑑賞魚等の飼育用の水槽、水族館の水槽、プール、貯水槽、空調設備、特に冷却版、冷却水の給排水配管、浴槽の循環系統の配管、船艇、鉢植え、コンクリートやブロックなどの外構用材料・資材 など水と接触し、藻類が発生することによって、不利益を被るあるいは外観を損なう広範囲にわたる物品など水と接触し、藻類が発生することによって、不利益を被る広範囲にわたる物品を挙げることができる。物品を構成する材料は特に限定されず、本発明の方法によれば、ガラス、陶器、セラミックス、金属、合成樹脂等、様々な材料であっても、物品の表面の水と接する部分における藻類の発生を安全に長期にわたって効果的に抑制することができるが、上述したオゾン水、プラズマ又は電磁波照射による処理と組み合わせて藻類発生抑制剤の塗布を行う場合、物品が上記藻類発生抑制剤に含まれるケイ素含有化合物が結合しにくい合成樹脂からなるものであっても、該物品の表面の水と接する部分における藻類の発生を効果的に抑制することができる。 In the algae generation suppression treatment method of the present invention, the target articles include aquarium tanks for aquariums, aquarium tanks, pools, water storage tanks, air conditioning equipment, particularly cooling plates, cooling water supply and drainage pipes, bathtubs Contact with water, such as circulation system piping, boats, potted plants, exterior materials such as concrete and blocks, etc., and contact with water such as a wide range of articles that suffer disadvantages or damage the appearance due to the generation of algae. A wide range of articles that suffer from disadvantages due to the generation of algae can be mentioned. The material that constitutes the article is not particularly limited. According to the method of the present invention, even if various materials such as glass, earthenware, ceramics, metal, and synthetic resin are used, algal The generation can be safely and effectively suppressed over a long period of time, but when applying the algal generation inhibitor in combination with the treatment with ozone water, plasma or electromagnetic wave irradiation described above, the article is included in the algal generation inhibitor. Even if it is made of a synthetic resin to which the silicon-containing compound is difficult to bind, the generation of algae in the portion in contact with water on the surface of the article can be effectively suppressed.
以下に実施例を挙げて本発明をさらに詳細に説明するが、本発明はこれらの実施例に限定されるものではない。 EXAMPLES The present invention will be described in more detail with reference to examples below, but the present invention is not limited to these examples.
ケイ素含有化合物として、オクタデシルジメチル(3−トリメトキシシリルプロピル)アンモニウムクロライド(Si-QAC)を用い、ラウリン酸アミドプロピルジメチルアミンオキシド液(製品名:川研ケミカル製ソフタゾリンLAO)を用いて藻類発生抑制剤の水溶液を調製し、以下の手順でガラス製水槽の内面において藻類の発生を抑制できるか否か試験した。 Inhibition of algae generation using octadecyldimethyl (3-trimethoxysilylpropyl) ammonium chloride (Si-QAC) as a silicon-containing compound and amidopropyldimethylamine oxide laurate (product name: Softazoline LAO manufactured by Kawaken Chemical) An aqueous solution of the agent was prepared and tested whether the generation of algae could be suppressed on the inner surface of the glass water tank by the following procedure.
Si-QAC(3%(容量/容量))とLAO(1%(容量/容量))とを混合した水溶液をガラス製水槽の内面全体に刷毛を用いて塗布した後、乾燥した。このSi-QAC+LAO水溶液を塗布した水槽に8匹のメダカを入れ、水槽を室温にて日当たりの良い所に置いて、飼育した。コントロールとして、Si-QAC+LAO水溶液を塗布していない水槽を用いて同様の条件で飼育した。 An aqueous solution in which Si-QAC (3% (volume / volume)) and LAO (1% (volume / volume)) were mixed was applied to the entire inner surface of the glass water tank using a brush and then dried. Eight medaka fish were placed in a water tank to which this Si-QAC + LAO aqueous solution was applied, and the water tank was placed in a sunny place at room temperature and reared. As a control, the animals were reared under the same conditions using a water tank to which no Si-QAC + LAO aqueous solution was applied.
飼育開始から約4週間後の水槽の写真を図1に示す。Si-QAC+LAO水溶液を塗布していないコントロールの水槽では約3週間で藻が生え始め、さらに1週間後には図1に示すようにほぼ全面に藻が発生し、水槽内のメダカが見難くなった。一方で、図1に示すように、塗布したものは約4週間後でも水槽の壁の透明性が維持され、藻が確認できなかった。また、飼育開始から約4週間後、コントロールの水槽のメダカは8匹中、2匹のみしか生存しなかったが、Si-QAC+LAO水溶液で処理した水槽では8匹すべてが生存した。 A photograph of the aquarium about 4 weeks after the start of breeding is shown in FIG. In a control tank not coated with Si-QAC + LAO aqueous solution, algae begin to grow in about 3 weeks, and a week later, algae develop almost as shown in Fig. 1, making it difficult to see medaka in the tank. became. On the other hand, as shown in FIG. 1, the applied one maintained the transparency of the wall of the aquarium even after about 4 weeks, and algae could not be confirmed. In addition, about 4 weeks after the start of breeding, only 2 of 8 medaka in the control water tank survived, but all 8 lived in the water tank treated with the Si-QAC + LAO aqueous solution.
本発明の方法は、水槽、貯水槽、空調設備、冷却水の給排水配管、浴槽の循環系統の配管などの水と接する部分において藻類の発生を抑制するのに好適に用いられる。 The method of the present invention is suitably used to suppress the generation of algae in a portion in contact with water, such as a water tank, a water tank, an air conditioning facility, a cooling water supply / drain pipe, and a piping of a circulation system of a bathtub.
Claims (20)
(a)一般式(1)
(b)陽イオン界面活性剤(ただし、前記ケイ素化合物を除く)(b1)、非イオン界面活性剤(b2)および両イオン界面活性剤(b3)からなる群から選ばれた少なくとも1種の界面活性剤によって、
水中に均一に分散させてなることを特徴とする藻類発生抑制剤。 An algae generation inhibitor that suppresses the generation of algae on the surface of an article,
(A) General formula (1)
(B) At least one interface selected from the group consisting of cationic surfactants (excluding the silicon compound) (b1), nonionic surfactant (b2) and amphoteric surfactant (b3) Depending on the active agent
An algae generation inhibitor characterized by being uniformly dispersed in water.
請求項1〜16に記載のいずれかに記載の藻類発生抑制剤を該物品の表面に塗布することを特徴とする物品の藻類発生抑制処理方法。 A treatment method for suppressing the generation of algae on the surface of an article,
An algae generation inhibiting treatment method for an article, comprising applying the algal occurrence inhibitor according to any one of claims 1 to 16 to a surface of the article.
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