JP2010083830A - Algae outgrowth inhibitor and algae outgrowth suppressing treating method on surface of goods - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an algae outgrowth inhibitor and an algae outgrowth suppressing method in which maintenance is easy or unnecessary and versatility is high, and which is cheap. <P>SOLUTION: The algae outgrowth inhibitor controls outgrowth of algae on a surface of goods, comprises making (a) a silicon-containing compound expressed by general formula (1), wherein R<SP>1</SP>represents a hydrocarbon having a carbon number of 6 or more, R<SP>2</SP>and R<SP>3</SP>show a lower hydrocarbon group which may be the same or different, R<SP>4</SP>shows a bivalent lower hydrocarbon group, R<SP>5</SP>, R<SP>6</SP>and R<SP>7</SP>show a lower alkyl group or a lower alkoxy group which may be same or different, X shows a halogen ion or an organic carbonyloxy ion, uniformly disperse in water by (b) at least one surfactant chosen from a group consisting of a cationic surfactant (however, excluding the silicon compound) (b1), a nonionic surfactant (b2), and an ampholytic surfactant (b3). <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  TECHNICAL FIELD The present invention relates to an algae generation inhibitor and a suppression method on an article surface, and in particular, an algae generation inhibitor and an algae used to suppress the generation of algae on an article surface such as a water tank, a water tank, an air conditioner, and a piping of a bathtub circulation system. The present invention relates to an occurrence suppression processing method.

  In general, problems with algae generation include, for example, aquariums for appreciation fish, water storage tanks, and piping for the circulation system of bathtubs. It may adversely affect the health of fish, cause water quality deterioration, and may cause health problems. In particular, in an aquarium equipped with a large observation transparent wall using a large-scale aquarium in recent years, the generation of algae on the transparent wall hinders observation, which is also a business problem. Further, even in a cooling plate for lowering the cooling water temperature in air conditioning equipment, there is a problem that algae are generated by water droplets generated on the surface of the cooling plate, and cooling efficiency is lowered. In addition, algae generated on the bottom of the ship cause a reduction in fuel consumption because the speed of the algae is reduced, so maintenance such as algae removal is required on a regular basis, resulting in a decrease in boat operation rate and maintenance costs. There are also problems such as.

In response to these problems, a method has been commercialized in which water is electrolyzed to produce ionic water in which copper ions and silver ions are dissolved, thereby suppressing the algaecidal and algal generation by the metal ions. Containing ionic water is also commercially available as an algicide. In addition, the ship's bottom paint used paints containing metal ions that have zinc and other algaecidal functions and barnacles and other oyster adhesion prevention functions. It has been replaced with paint to make. Furthermore, a method of coating antibacterial quaternary ammonium organosilane has been proposed as a general method for reducing microorganisms in water (Patent Document 1).
Special table 2007-502328

  However, the method using electrolytic metal ion water requires electrolysis equipment and has the problem that maintenance of the equipment is necessary at all times. Even in the case of ship bottom paints containing silver ions, silver ions are always eluted. However, this requires a large amount of paint to be applied and is not realistic, so it is difficult to expect long-term stability. Furthermore, since the method using the antibacterial organic silane described in Patent Document 1 is a method in which the organic silane is bonded to the surface of an object by a chemical reaction, once coating is performed, the surface layer is not physically peeled off. It is basically different from the conventional method in that it works effectively. However, in the method of Patent Document 1, a high concentration of 42% organic silane is diluted with deionized water and used, but such an organic silane is an unstable compound and is not easily diluted with water. Since the organic silane polymer is produced and becomes cloudy during dilution, it is extremely difficult to dilute to any low concentration, and the diluted solution is also unstable, and becomes cloudy in a relatively short time and becomes an antibacterial agent. As a result, there is a problem that the function as a remarkably lowered.

  In view of the related art, an object of the present invention is to provide an algae generation inhibitor and a method for suppressing algae generation that are easy or unnecessary to maintain and have high versatility and are inexpensive.

  As a result of intensive studies to solve the above-mentioned problems, the present inventors applied the organosilane compound having a specific antibacterial performance to the surface of the article, thereby generating algae in the part in contact with water on the article surface. It has been found that it can be effectively and easily suppressed over a long period of time, and the present invention has been completed.

That is, the algae generation inhibitor of the present invention is an algae generation inhibitor that suppresses the generation of algae on the surface of an article,
(A) General formula (1)
(Wherein R1 represents a hydrocarbon group having 6 or more carbon atoms, R2 and R3 represent the same or different lower hydrocarbon groups, R4 represents a divalent lower hydrocarbon group, R5, R6 and R7 each represent a lower alkyl group or a lower alkoxy group, which may be the same or different, and X represents a halogen ion or an organic carboquinyloxy ion).
(B) At least one interface selected from the group consisting of cationic surfactants (excluding the silicon compound) (b1), nonionic surfactant (b2) and amphoteric surfactant (b3) Depending on the active agent
It is characterized by being uniformly dispersed in water.

  In another preferred embodiment of the algal development inhibitor of the present invention, R1 of the silicon-containing compound (a) represented by the general formula (1) represents an alkyl group having 10 to 25 carbon atoms, and R2 and R3 are the same. Or a lower alkyl group having 1 to 6 carbon atoms which may be different; R4 represents a lower alkylene group having 1 to 6 carbon atoms; and R5, R6 and R7 may be the same or different. 1 to 6 lower alkyl groups or alkoxy groups, wherein X is a halogen ion or an organic carboquinyloxy ion.

  In another preferred embodiment of the algal development inhibitor of the present invention, the silicon-containing compound (a) represented by the general formula (1) is octadecyldimethyl (3-trimethoxysilylpropyl) ammonium chloride, octadecyldiethyl (3 -Trimethoxysilylpropyl) ammonium chloride, octadecyldimethyl (2-trimethylsilylethyl) ammonium chloride, octadecyldipropyl (4-trimethoxysilylbutyl) ammonium acetate, octadecyldimethyl (3-triethoxysilylpropyl) ammonium chloride, octadecyl Dimethyl (3-triisopropoxysilylpropyl) ammonium chloride, octadecyldimethyl (3-triethylsilylsilylpropyl) ammonium chloride, octadecyldimethyl (3- Riisopropylsisilylpropyl) ammonium chloride, heptadecyldimethyl (3-trimethoxysilylpropyl) ammonium chloride, heptadecyldiisopropyl (2-triethoxysilylethyl) ammonium chloride, hexadecyldimethyl (3-trimethoxysilylpropyl) ammoni It is at least one silicon-containing compound selected from the group consisting of muchloride, hexadecyldimethyl (3-trimethoxysilylpropyl) ammonium acetate, and pentasadecyldimethyl (3-triethoxysilylpropyl) ammonium chloride. Features. Among these, octadecyldimethyl (3-trimethoxysilylpropyl) ammonium chloride is preferable.

In another preferred embodiment of the algal development inhibitor of the present invention, the cationic surfactant (b1) is represented by the following general formula (2):
(Wherein R11 represents a hydrocarbon group having 6 or more carbon atoms, R12, R13 and R14 represent the same or different lower hydrocarbon groups, and Y represents a halogen ion or an organic carbonyloxy ion). It is a cationic surfactant (b11) represented by

  In another preferable example of the algal generation inhibitor of the present invention, R11 of the cationic surfactant (b11) represented by the general formula (2) represents an alkyl group having 10 to 25 carbon atoms, and R12, R13 and R14 each represent a lower alkyl group having 1 to 6 carbon atoms which may be the same or different, and Y is a halogen ion or an organic carbonyloxy ion.

  In another preferred embodiment of the algal development inhibitor of the present invention, the cationic surfactant (b11) is decyltrimethylammonium chloride, decyltriethylammonium acetate, dodecyltrimethylammonium acetate, dodecyltriisopropylammonium bromide, tridecyltriethylammonium promide. , Tetradecyltrimethylammonium chloride, tetradecyltriethylammonium chloride, tetradecyltri-n-propylammonium chloride, pentadecyltrimethylammonium chloride, pentadecyltriethylammonium chloride, pentadecyltri-n-propylammonium chloride, hexadecyltrimethylammonium chloride , Hexadecyltriethylammonium chloride Ride, characterized in that it is at least one selected from hexadecyltrimethylammonium -n- propyl ammonium chloride, octadecyl trimethyl ammonium chloride and octadecyl triethyl ammonium chloride and octadecyl tri -n- propyl ammonium chloride group consisting ride. Among these, hexadecyltrimethylammonium chloride is preferable.

  In another preferred embodiment of the algal development inhibitor of the present invention, the cationic surfactant (b1) is N-cocoyl-arginine ethyl ester pyridonecarboxylate (b12).

  In another preferred embodiment of the algal development inhibitor of the present invention, the nonionic surfactant (b2) is a polyoxyalkylene glycol alkyl ether or fatty acid ester containing a polyoxyethylene unit and / or a polyoxypropylene unit, At least one nonionic system selected from the group consisting of sorbitan fatty acid ester, fatty acid monoglyceride, fatty acid ester, fatty acid alkanolamide, fatty acid amide, alkyl ether, alkylamine oxide, polyoxyethylene alkyl ether and polyoxyethylene nonylphenyl ether It is characterized by being a surfactant. Among these, polyoxyethylene sorbitan monolaurate is preferable.

  In another preferred embodiment of the algal development inhibitor of the present invention, the amphoteric surfactant (b3) is at least one selected from the group consisting of betaine and amine oxides. Among these, lauramidopropyldimethylamine oxide is preferable.

  In another preferred embodiment of the algal development inhibitor of the present invention, octadecyldimethyl (3-trimethoxysilylpropyl) ammonium chloride is used as the silicon-containing compound (a), and hexadecyltrimethylammonium is used as the cationic surfactant (b1). It contains chloride.

  In another preferred embodiment of the algal development inhibitor of the present invention, octadecyldimethyl (3-trimethoxysilylpropyl) ammonium chloride is used as the silicon-containing compound (a), and polyoxyethylene sorbitan is used as the nonionic surfactant (b2). It contains monolaurate.

  In another preferred embodiment of the algal development inhibitor of the present invention, octadecyldimethyl (3-trimethoxysilylpropyl) ammonium chloride is used as the silicon-containing compound (a), and lauramidopropyldimethyl is used as the amphoteric surfactant (b3). It contains an amine oxide.

  The algae generation suppression treatment method of the present invention is a treatment method for suppressing the generation of algae on the surface of an article, wherein the algae generation inhibitor is applied to the surface of the article.

  In a preferred embodiment of the method for suppressing algae generation according to the present invention, the method includes a step of treating the surface of the article with ozone water, plasma or electromagnetic wave irradiation before applying the algae generation inhibitor on the surface of the article. Features.

  In another preferred embodiment of the method for inhibiting algae generation according to the present invention, after the algae generation inhibitor is applied to the surface of the article, the algae generation inhibitor is present in a liquid state on the surface of the article. Irradiation processing is performed.

  In another preferred embodiment of the method for inhibiting algae generation according to the present invention, the article is a water tank, a water tank, an air conditioner, a cooling water supply / drain pipe, or a bathtub circulation system pipe.

  ADVANTAGE OF THE INVENTION According to this invention, there exists an advantageous effect that an algae generation | occurrence | production inhibitor and an algae generation | occurrence | production suppression processing method with high versatility which are easy or needless maintenance are inexpensive can be provided.

Hereinafter, the present invention will be described in detail. The algae generation inhibitor of the present invention is an algae generation inhibitor that suppresses the generation of algae on the surface of an article,
(A) General formula (1)
(Wherein R1 represents a hydrocarbon group having 6 or more carbon atoms, R2 and R3 represent the same or different lower hydrocarbon groups, R4 represents a divalent lower hydrocarbon group, R5, R6 and R7 each represent a lower alkyl group or a lower alkoxy group, which may be the same or different, and X represents a halogen ion or an organic carboquinyloxy ion).
(B) At least one interface selected from the group consisting of cationic surfactants (excluding the silicon compound) (b1), nonionic surfactant (b2) and amphoteric surfactant (b3) Depending on the active agent
It is characterized by being uniformly dispersed in water. Application of the algae generation inhibitor in which the silicon-containing compound is uniformly dispersed in water using the surfactant to effectively coat the silicon-containing compound film on the surface of the article. Even if the surface of the applied article has been in contact with water for a long time, it is possible to suppress the generation of algae on the surface or in contact with water, so that maintenance is easy or unnecessary. In addition, even if the film of the silicon-containing compound is present on the surface of the article, it does not adversely affect animals such as fish and humans, so that safety is high. In addition, the algae generation inhibitor of the present invention can be produced at low cost, has a high algae generation inhibitory effect, and maintains the algae generation inhibitory effect for a long period of time with a single application. Can do.

The components of the algal generation inhibitor of the present invention will be described in detail below. The silicon-containing compound (a), which is an antibacterial component contained in the algal development inhibitor of the present invention, has the general formula (1)
(Wherein R1 represents a hydrocarbon group having 6 or more carbon atoms, R2 and R3 represent the same or different lower hydrocarbon groups, R4 represents a divalent lower hydrocarbon group, R5, R6 and R7 represent a lower alkyl group or a lower alkoxy group which may be the same or different, and X represents a silicon-containing compound represented by a halogen ion or an organic carbonyloxy ion (organic carboxylate ion). The algae generation inhibitor of the present invention may contain one or more silicon-containing compounds represented by the general formula (1).

  Further, among the silicon-containing compounds (a) represented by the general formula (1), a preferred embodiment is that R1 in the general formula (1) represents an alkyl group having 10 to 25 carbon atoms, and R2 and R3 Represents a lower alkyl group having 1 to 6 carbon atoms which may be the same or different, R4 represents a lower alkylene group having 1 to 6 carbon atoms, and R5, R6 and R7 may be the same or different carbons. A lower alkyl group having 1 to 6 atoms or a lower alkoxy group is shown, and X is a silicon-containing compound which is a halogen ion or an organic carbonyloxy ion (organic carboxylate ion).

  Examples of the hydrocarbon group having 6 or more carbon atoms of R1 include hexyl, heptyl, octyl, nonyl, decyl, undecyl, dodecyl, tridecyl, tetradecyl, pentadecyl, hexadecyl, heptadecyl, Examples include octadecyl group, nonadecyl group, eicosyl group, uneicosyl group, doeicosyl group, trieicosyl group, tetraeicosyl group, pentaeicosyl group and the like.

  Examples of the lower hydrocarbon group which may be the same or different for R2 and R3 include, for example, methyl group, ethyl group, propyl group, isopropyl group, butyl group, pentyl group, hexyl group, cyclohexyl group, phenyl group, and tolyl group. Etc. can be illustrated.

  Examples of the lower alkylene group for R4 include a methylene group, an ethylene group, a trimethylene group, a tetramethylene group, and a hexamethylene group.

  R5, R6 and R7 are the same or different lower alkyl group or lower alkoxy group, and specifically include methoxy group, ethoxy group, propoxy group, isopropoxy group, butoxy group, pentyloxy group, hexyloxy Examples thereof include a group, a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, a pentyl group, and a hexyl group.

  X is a halogen ion such as chlorine ion or bromine ion, an organic carbonyloxy ion (organic carboxyl) such as methylcarbonyloxy ion (acetate ion), ethylcarbonyloxy ion (propionate ion), phenylcarbonyloxy ion (benzoate ion), etc. Acid ion).

  Specific examples of the silicon-containing compound (a) include the following compounds. Octadecyldimethyl (3-trimethoxysilylpropyl) ammonium chloride, octadecyldiethyl (3-trimethoxysilylpropyl) ammonium chloride, octadecyldimethyl (2-trimethylsilylethyl) ammonium chloride, octadecyldipropyl (4-trimethoxysilylbutyl) ammonium Acetate, octadecyldimethyl (3-triethoxysilylpropyl) ammonium chloride, octadecyldimethyl (3-triisopropoxysilylpropyl) ammonium chloride, octadecyldimethyl (3-triethylsilylsilylpropyl) ammonium chloride, octadecyldimethyl (3 -Triisopropylsilylsilyl) ammonium chloride, heptadecyldimethyl (3-trimethoxy) Rylpropyl) ammonium chloride, heptadecyldiisopropyl (2-triethoxysilylethyl) ammonium chloride, hexadecyldimethyl (3-trimethoxysilylpropyl) ammonium chloride, hexadecyldimethyl (3-trimethoxysilylpropyl) ammonium acetate, pentasa Decyldimethyl (3-triethoxysilylpropyl) ammonium chloride.

  In addition to the silicon-containing compound, the algal development inhibitor of the present invention includes a cationic surfactant (except for the silicon-containing compound) (b1), a nonionic surfactant (b2), and a zwitterionic surfactant. Containing at least one surfactant selected from the group consisting of the agent (b3).

  The cationic surfactant (b) is a cationic surfactant represented by the following general formula (2), provided that it is a cationic surfactant (b11) excluding the silicon compound (a).

(Wherein R11 represents a hydrocarbon group having 6 or more carbon atoms, and R12, R13 and R14 represent the same or different lower hydrocarbon groups.) Or it is preferable that it is N-cocoyl-arginine ethyl ester pyridone carboxylate (12).

  Furthermore, among the cationic surfactants (b11) represented by the general formula (2), R11 represents an alkyl group having 10 to 25 carbon atoms, and R12, R13 and R14 may be the same or different. It is preferably a lower alkyl group having 1 to 6 carbon atoms, and Y is preferably a halogen ion or an organic carbonyloxy ion (organic carboxylate ion).

  The hydrocarbon group R11 having 6 or more carbon atoms of the cationic surfactant (b11) represented by the general formula (2) is exemplified as R1 of the general formula (1) of the silicon-containing compound (a). Similarly, hydrocarbon groups having 6 or more carbon atoms can be exemplified.

  R12, R13 and R14 of the cationic surfactant (b11) represented by the general formula (2) are the lower hydrocarbons exemplified as R2 and R3 of the general formula (1) of the silicon-containing compound (a). Groups can be exemplified as well.

  Specific examples of the cationic surfactant (b11) represented by the general formula (2) include the following compounds. Decyltrimethylammonium chloride, decyltriethylammonium acetate, dodecyltrimethylammonium acetate, dodecyltriisopropylammonium bromide, tridecyltriethylammonium promide, tetradecyltrimethylammonium chloride, tetradecyltriethylammonium chloride, tetradecyltri-n-propylammonium chloride , Pentadecyltrimethylammonium chloride, pentadecyltriethylammonium chloride, pentadecyltri-n-propylammonium chloride, hexadecyltrimethylammonium chloride, hexadecyltriethylammonium chloride, hexadecyltri-n-propylammonium chloride, oct Decyl trimethyl ammonium chloride, octadecyl triethyl ammonium chloride, it can be mentioned octadecyl tri -n- propyl ammonium chloride, especially hexadecyl trimethyl ammonium is most preferred.

  The nonionic surfactant (b2) includes polyoxyethylene units or polyoxyalkylene glycol alkyl ethers or fatty acid esters, sorbitan fatty acid esters, fatty acid monoglycerides, fatty acid alkanolamides, fatty acid amides, alkyls containing polyoxyethylene units. It is at least one nonionic surfactant selected from the group consisting of ether, alkylamine oxide, polyoxyethylene alkyl ether and polyoxyethylene nonylphenyl ether.

  Specific examples of the nonionic surfactant (b2) include a monoalkyl ether of polyethylene glycol, a monoalkyl ether of polyalkylene glycol containing both polyoxyethylene units and polyoxypropylene units, sorbitan laurate, poly At least one selected from the group consisting of oxyethylene sorbitan monolaurate, fatty acid monoglyceride, fatty acid ester, fatty acid alkanolamide, fatty acid amide, alkyl ether, alkylamine oxide, polyoxyethylene alkyl ether and polyoxyethylene nonylphenyl ether Nonionic surfactants can be exemplified.

  More specifically, as the nonionic surfactant, sorbitan fatty acid esters such as sorbitan monolaurate and sorbitan sesquiisostearate; glycerin fatty acid esters such as glycerol monooleate and glycerol monoisostearate; diglyceryl monooleate, Polyglycerin fatty acid esters such as decaglyceryl diisostearate; polyoxyethylene sorbitan fatty acid esters such as polyoxyethylene sorbitan monooleate and polyoxyethylene sorbitan monooleate; polyoxyethylene sorbite monolaurate, polyoxyethylene sorbite tetraoleate and the like Polyoxyethylene sorbite fatty acid ester of polyoxyethylene glyceryl monooleate, polyoxyethylene glyceryl monooleate, etc. Polyethylene glycol fatty acid esters such as polyoxyethylene monoisostearate and polyoxyethylene monooleate; Polyethylene glycol difatty acid esters such as polyoxyethylene diisostearate and polyoxyethylene diisostearate; Polyoxy Polyoxyethylene alkyl ethers such as ethylene oleyl ether and polyoxyethylene oleyl ether (10E.O.); polyoxyethylene polyoxypropylene alkyl ethers and the like. Among these, polyoxyethylene sorbitan monolaurate is most preferable.

  The amphoteric surfactant (b3) includes at least one selected from the group consisting of betaine and amine oxides.

  Specifically, examples of the betaine zwitterionic surfactant include coco fatty acid amidopropylcarboxybetaine, lauryldimethylaminoacetic acid betaine, and imidazolium betaine. Among these, coco fatty acid amidopropylcarboxybetaine and lauryldimethylaminoacetic acid betaine are preferable from the viewpoint of stability of the silicon-containing compound which is an antibacterial component in the solution.

  Examples of the amine oxide zwitterionic surfactant include lauramidopropyldimethylamine oxide and lauryldimethylamine oxide. Among these, lauramidopropyldimethylamine oxide is preferable from the viewpoint of stability of the silicon-containing compound that is an antibacterial component in the solution. In particular, among the above-described betaine-based and amine oxide-based surfactants, lauramidopropyldimethylamine oxide is preferable from the viewpoint of long-term stability of the silicon-containing compound in a solution.

  As the solvent for the algal development inhibitor of the present invention, an aqueous solution is usually employed. However, the silicon-containing compound (a), the cationic surfactant (b1) and / or the nonionic surfactant (b2) and / or As long as the amphoteric surfactant (b3) is dissolved, it can be used as a mixed solvent of water and a hydrophilic solvent such as methanol, ethanol, propanol or acetone.

  The content of the silicon-containing compound (a) in the algal development inhibitor of the present invention is usually 0.01 to 40% by volume, preferably 0.1 to 10% by volume, and the content of the surfactant (b) is usually 0.007 to 20%. The volume% is preferably 0.05 to 10% by volume, and it is preferably within this range in order to sufficiently exhibit the algae generation inhibiting action and its sustainability.

  The algal generation suppression treatment method of the present invention is a treatment method for suppressing the generation of algae on the surface of an article, wherein the algal generation inhibitor of the present invention is applied to the surface of the article. And In the method of the present invention, it is possible to suppress the generation of algae on the surface of the article safely and for a long time just by applying the algae generation inhibitor of the present invention to the surface of the article, and no special chemical reaction conditions are required. By simply carrying out the method of the present invention, the effect can be obtained.

  The silicon-containing compound has high binding properties to materials such as glass and ceramics, but has low binding properties to synthetic resins such as plastics. After the treatment of plasma or electromagnetic wave irradiation, the algae generation inhibitor of the present invention is applied to the surface of the treated article, or the algae generation inhibitor is first applied, and then the algae generation inhibitor It is preferable to carry out the treatment of electromagnetic wave irradiation in a state of being present in a liquid state on the surface of the article. By performing such pre-treatment or post-treatment, the silicon-containing compound contained in the algae generation inhibitor is particularly easily bonded to the surface of an article made of a synthetic resin, and the silicon-containing compound film is formed on the surface of the article. Can be formed better and the generation of algae on the article surface can be more effectively suppressed.

  The treatment with ozone water is not particularly limited. For example, the surface of the article is made into ozone water by immersing the article in ozone water whose concentration is adjusted appropriately, or spraying or applying ozone water to the article. This can be done by contacting. The treatment time with ozone water can be appropriately changed depending on the concentration of ozone water to be used. For example, when the ozone concentration is 0.4 to 0.6 ppm, the treatment may be performed for about 5 minutes. In the case of ozone water, if treated for about 1 minute, a film of a silicon-containing compound is effectively formed on the surface of the article by the algae generation inhibitor of the present invention, and the generation of algae on the article surface can be sufficiently suppressed. it can.

  The treatment with plasma is not particularly limited, but can be performed using a conventionally known plasma treatment method. Among them, the atmospheric pressure plasma processing method is preferable from the viewpoint that the operation is easy, the processing efficiency is good, and a commercially available processing apparatus can be used. In the atmospheric pressure plasma processing method, the atmospheric gas is the atmosphere, and air is used as the working gas supplied to the plasma processing apparatus. However, the present invention is not limited to these. For example, argon, helium, neon and the like are inert. Gas, nitrogen gas or oxygen gas may be used.

  As an apparatus used for the plasma treatment, a commercially available atmospheric pressure plasma treatment apparatus can be used, and examples thereof include a SEDE plasma soft etcher manufactured by Meiwa Forsys. As the output of the plasma irradiation, a low output of 1 to 18 W is sufficient, and in this case, the treatment time is preferably 1 minute or more, more preferably 3 minutes or more, but if it has a high output of 50 W or more, 30 A sufficient effect can be obtained with a processing time of less than a second. An industrial device having an output of several hundred to several tens of kilowatts may also be used for the plasma treatment in the present invention.

  When the article is treated with ozone water or plasma by the above method, radicals are generated, oxygen-containing functional groups are generated on the surface of the article, and the reactivity with the silicon-containing compound in the algae generation inhibitor is improved. By doing so, it is conceivable that a silicon-containing compound film is effectively formed on the surface of the article, and that the generation of algae on the article surface can be further suppressed as compared with the case where it is not treated.

  The electromagnetic wave irradiation treatment is not particularly limited, but can be performed by placing an article in a microwave oven and irradiating microwaves with the microwave oven. Here, the microwave oven is a “cooking apparatus that heats food by applying high-frequency electromagnetic waves”, and generally includes an apparatus that heats food by irradiating microwaves with a wavelength of 2450 MHz. Further, as a microwave irradiation method, either a batch method or a continuous method may be used. Examples of the microwave oven that can be used in the present invention include a home microwave oven, a high-power commercial microwave oven, and an industrial microwave accelerator. In addition, about the output and processing time of a microwave oven, before performing the application of the algae generation inhibitor, a sufficient effect can be obtained by processing for 30 seconds at an output of 700 W. After performing, a sufficient effect can be obtained in 700 seconds for 20 seconds and 500 W in 30 seconds.

  The effect of the present invention can be obtained by using any of the above-described ozone water treatment, plasma treatment, and electromagnetic wave irradiation treatment. However, if the ozone water treatment is used, the article can be easily treated even if the article is large. Is manufactured on a factory line, and when the article is subjected to algae generation suppression treatment using the method of the present invention, it is easy to incorporate it into the line. In the case of the electromagnetic wave irradiation treatment, since the effect of the present invention can be obtained even in a home microwave oven, there is an advantage that the method of the present invention can be easily carried out at home.

  Application of the algae generation inhibitor to the surface of the article can be performed using a brush or cloth, and is not particularly limited. In addition, after applying the algae generation inhibitor, excess algae generation inhibitor may be removed from the surface of the article by washing with water as necessary, and the algae generation inhibitor was applied. In the case where the electromagnetic wave irradiation treatment is performed later, the algae generation inhibitor can be removed after the electromagnetic wave irradiation treatment.

  In the algae generation suppression treatment method of the present invention, the target articles include aquarium tanks for aquariums, aquarium tanks, pools, water storage tanks, air conditioning equipment, particularly cooling plates, cooling water supply and drainage pipes, bathtubs Contact with water, such as circulation system piping, boats, potted plants, exterior materials such as concrete and blocks, etc., and contact with water such as a wide range of articles that suffer disadvantages or damage the appearance due to the generation of algae. A wide range of articles that suffer from disadvantages due to the generation of algae can be mentioned. The material that constitutes the article is not particularly limited. According to the method of the present invention, even if various materials such as glass, earthenware, ceramics, metal, and synthetic resin are used, algal The generation can be safely and effectively suppressed over a long period of time, but when applying the algal generation inhibitor in combination with the treatment with ozone water, plasma or electromagnetic wave irradiation described above, the article is included in the algal generation inhibitor. Even if it is made of a synthetic resin to which the silicon-containing compound is difficult to bind, the generation of algae in the portion in contact with water on the surface of the article can be effectively suppressed.

  EXAMPLES The present invention will be described in more detail with reference to examples below, but the present invention is not limited to these examples.

  Inhibition of algae generation using octadecyldimethyl (3-trimethoxysilylpropyl) ammonium chloride (Si-QAC) as a silicon-containing compound and amidopropyldimethylamine oxide laurate (product name: Softazoline LAO manufactured by Kawaken Chemical) An aqueous solution of the agent was prepared and tested whether the generation of algae could be suppressed on the inner surface of the glass water tank by the following procedure.

  An aqueous solution in which Si-QAC (3% (volume / volume)) and LAO (1% (volume / volume)) were mixed was applied to the entire inner surface of the glass water tank using a brush and then dried. Eight medaka fish were placed in a water tank to which this Si-QAC + LAO aqueous solution was applied, and the water tank was placed in a sunny place at room temperature and reared. As a control, the animals were reared under the same conditions using a water tank to which no Si-QAC + LAO aqueous solution was applied.

  A photograph of the aquarium about 4 weeks after the start of breeding is shown in FIG. In a control tank not coated with Si-QAC + LAO aqueous solution, algae begin to grow in about 3 weeks, and a week later, algae develop almost as shown in Fig. 1, making it difficult to see medaka in the tank. became. On the other hand, as shown in FIG. 1, the applied one maintained the transparency of the wall of the aquarium even after about 4 weeks, and algae could not be confirmed. In addition, about 4 weeks after the start of breeding, only 2 of 8 medaka in the control water tank survived, but all 8 lived in the water tank treated with the Si-QAC + LAO aqueous solution.

  The method of the present invention is suitably used to suppress the generation of algae in a portion in contact with water, such as a water tank, a water tank, an air conditioning facility, a cooling water supply / drain pipe, and a piping of a circulation system of a bathtub.

FIG. 1 is a photograph showing the results after about 4 weeks from the start of breeding medaka in a water tank treated according to the method of the present invention and an untreated water tank.

Claims (20)

An algae generation inhibitor that suppresses the generation of algae on the surface of an article,
(A) General formula (1)
(Wherein R1 represents a hydrocarbon group having 6 or more carbon atoms, R2 and R3 represent the same or different lower hydrocarbon groups, R4 represents a divalent lower hydrocarbon group, R5, R6 and R7 each represent a lower alkyl group or a lower alkoxy group, which may be the same or different, and X represents a halogen ion or an organic carboquinyloxy ion).
(B) At least one interface selected from the group consisting of cationic surfactants (excluding the silicon compound) (b1), nonionic surfactant (b2) and amphoteric surfactant (b3) Depending on the active agent
An algae generation inhibitor characterized by being uniformly dispersed in water.   In the silicon-containing compound (a) represented by the general formula (1), R1 represents an alkyl group having 10 to 25 carbon atoms, and R2 and R3 may be the same or different and may be the same or different. An alkyl group, R4 represents a lower alkylene group having 1 to 6 carbon atoms, R5, R6 and R7 represent a lower alkyl group or an alkoxy group having 1 to 6 carbon atoms which may be the same or different, and X The algal generation inhibitor according to claim 1, wherein is an halogen ion or an organic carboquinyloxy ion.   When the silicon-containing compound (a) represented by the general formula (1) is octadecyldimethyl (3-trimethoxysilylpropyl) ammonium chloride, octadecyldiethyl (3-trimethoxysilylpropyl) ammonium chloride, octadecyldimethyl (2- Trimethylsilylethyl) ammonium chloride, octadecyldipropyl (4-trimethoxysilylbutyl) ammonium acetate, octadecyldimethyl (3-triethoxysilylpropyl) ammonium chloride, octadecyldimethyl (3-triisopropoxysilylpropyl) ammonium chloride, Octadecyldimethyl (3-triethylsilylsilylpropyl) ammonium chloride, octadecyldimethyl (3-triisopropylsilylsilylpropyl) ammonium Chloride, heptadecyldimethyl (3-trimethoxysilylpropyl) ammonium chloride, heptadecyldiisopropyl (2-triethoxysilylethyl) ammonium chloride, hexadecyldimethyl (3-trimethoxysilylpropyl) ammonium chloride, hexadecyldimethyl (3 3. A silicon-containing compound selected from the group consisting of -trimethoxysilylpropyl) ammonium acetate and pentasadecyldimethyl (3-triethoxysilylpropyl) ammonium chloride. The algae generation inhibitor described in 1.   4. The silicon-containing compound (a) represented by the general formula (1) is octadecyldimethyl (3-trimethoxysilylpropyl) ammonium chloride. 5. Algae generation inhibitor. The cationic surfactant (b1) is represented by the following general formula (2)
(Wherein R11 represents a hydrocarbon group having 6 or more carbon atoms, R12, R13 and R14 represent the same or different lower hydrocarbon groups, and Y represents a halogen ion or an organic carbonyloxy ion). It is a cationic surfactant (b11) represented, The algae generation inhibitor of any one of Claims 1-4 characterized by the above-mentioned.   R11 of the cationic surfactant (b11) represented by the general formula (2) represents an alkyl group having 10 to 25 carbon atoms, and R12, R13, and R14 may be the same or different. The algal generation inhibitor according to claim 5, wherein the alga generation inhibitor is 1 to 6 and Y is a halogen ion or an organic carbonyloxy ion.   The cationic surfactant (b11) is decyltrimethylammonium chloride, decyltriethylammonium acetate, dodecyltrimethylammonium acetate, dodecyltriisopropylammonium bromide, tridecyltriethylammonium promide, tetradecyltriethylammonium chloride, tetradecyltriethylammonium chloride, tetra Decyltri-n-propylammonium chloride, pentadecyltrimethylammonium chloride, pentadecyltriethylammonium chloride, pentadecyltri-n-propylammonium chloride, hexadecyltrimethylammonium chloride, hexadecyltriethylammonium chloride, hexadecyltri-n-propyl Ann The algal generation inhibitor according to claim 5 or 6, which is at least one selected from the group consisting of nium chloride, octadecyltrimethylammonium chloride, octadecyltriethylammonium chloride and octadecyltri-n-propylammonium chloride. .   The algae generation inhibitor according to claim 5 or 6, wherein the cationic surfactant (b11) is hexadecyltrimethylammonium chloride.   The algal generation inhibitor according to any one of claims 1 to 4, wherein the cationic surfactant (b1) is N-cocoyl-arginine ethyl ester pyridonecarboxylate (b12).   The nonionic surfactant (b2) is an alkyl ether or fatty acid ester of a polyoxyalkylene glycol containing a polyoxyethylene unit and / or a polyoxypropylene unit, a sorbitan fatty acid ester, a fatty acid monoglyceride, a fatty acid ester, a fatty acid alkanolamide, The at least one nonionic surfactant selected from the group consisting of fatty acid amides, alkyl ethers, alkylamine oxides, polyoxyethylene alkyl ethers and polyoxyethylene nonylphenyl ethers. 5. The algae generation inhibitor according to any one of 4 above.   The algae generation inhibitor according to claim 10, wherein the nonionic surfactant (b2) is polyoxyethylene sorbitan monolaurate.   The said amphoteric surfactant (b3) is at least 1 sort (s) chosen from the group which consists of a betaine type | system | group and an amine oxide type | system | group, The algae generation | occurrence | production suppression of any one of Claims 1-4 characterized by the above-mentioned. Agent.   The algae generation inhibitor according to claim 12, wherein the amphoteric surfactant (b3) is lauramidopropyldimethylamine oxide.   The octadecyldimethyl (3-trimethoxysilylpropyl) ammonium chloride is contained as the silicon-containing compound (a), and hexadecyltrimethylammonium chloride is contained as the cationic surfactant (b1). The algae generation inhibitor according to any one of the above.   2. The silicon-containing compound (a) contains octadecyldimethyl (3-trimethoxysilylpropyl) ammonium chloride, and the nonionic surfactant (b2) contains polyoxyethylene sorbitan monolaurate. The algae generation inhibitor of any one of -4,10,11.   It contains octadecyldimethyl (3-trimethoxysilylpropyl) ammonium chloride as the silicon-containing compound (a), and lauramidopropyldimethylamine oxide as the amphoteric surfactant (b3). The algae generation inhibitor according to any one of 4, 12, and 13. A treatment method for suppressing the generation of algae on the surface of an article,
An algae generation inhibiting treatment method for an article, comprising applying the algal occurrence inhibitor according to any one of claims 1 to 16 to a surface of the article.   The algal generation suppression according to claim 17, further comprising a step of treating the surface of the article with ozone water, plasma, or electromagnetic wave irradiation before applying the algal generation inhibitor to the surface of the article. Processing method.   19. The method according to claim 17 or 18, wherein after the algae generation inhibitor is applied to the surface of the article, the treatment of electromagnetic wave irradiation is performed in a state where the algae generation inhibitor exists in a liquid state on the surface of the article. The algae generation | occurrence | production suppression processing method of description.   The algae generation suppression processing method according to any one of claims 17 to 19, wherein the article is a water tank, a water tank, an air conditioner, a cooling water supply / drain piping, or a piping of a circulation system of a bathtub. .