JP2010073908A5 - - Google Patents

Claims (10)

  A first connected member;
  A second connected member;
  A connecting portion for connecting the first connected member and the second connected member;
  The connection portion is formed on an Al layer, a first Zn-Al alloy layer formed on the first connected member side of the Al layer, and a second connected member side of the Al layer. In the semiconductor device comprising the second Zn-Al alloy layer,
  A first metallized layer is formed on the connection part side of the first connected member, and a first compound layer is provided between the first Zn-Al alloy layer and the first metallized layer. Formed,
  The semiconductor device, wherein the first compound layer is formed of a compound of metal and Al constituting the first metallized layer.   In claim 1,
  A second metallized layer is formed on the connecting part side of the second connected member, and a second compound layer is formed between the first Zn-Al alloy layer and the second metallized layer. Formed,
  The semiconductor device, wherein the second compound layer is formed of a compound of metal and Al constituting the second metallized layer.   In claim 1 or claim 2,
  The first connected member is a semiconductor element,
  The semiconductor device, wherein the second connected member is an electrode or a buffer material.   In any one of Claims 1 thru | or 3,
  The first metallized layer is a Ni layer;
  The semiconductor device, wherein the first compound layer is a Ni—Al compound layer.   In claim 2,
  The first and second metallization layers are Ni layers;
  The semiconductor device according to claim 1, wherein the first and second compound layers are Ni-Al compound layers.   An arrangement step of arranging a connection material in which a first Zn layer and a second Zn layer are formed on both surfaces of the Al layer between the first connected member and the second connected member,
  The connecting material is heated and melted to cause the Al layer and the first and second Zn layers to react with each other, so that a first Zn-Al layer and a second Zn-Al layer are formed on both sides of the Al layer, respectively. In a method for manufacturing a semiconductor device, including a connection step of connecting the first connected member and the second connected member,
  The first connected member has a first metallized layer formed on the connecting material side,
  In the connection step, the first metallized layer and Al contained in the connection material react to form a first compound layer between the first metallized layer and the Zn-Al layer. A method of manufacturing a semiconductor device.   In claim 6,
  The second connected member has a second metallized layer formed on the connecting material side,
  In the connection step, the second metallized layer reacts with Al contained in the connection material, and a second compound layer is formed between the second metallized layer and the Zn-Al layer. A method of manufacturing a semiconductor device.   In claim 6 or claim 7,
  The first connected member is a semiconductor element,
  The semiconductor device, wherein the second connected member is an electrode or a buffer material.   In any of claims 6 to 8,
  The first metallized layer is a Ni layer;
  The semiconductor device, wherein the first compound layer is a Ni—Al compound layer.   In claim 2,
  The first and second metallization layers are Ni layers;
  The semiconductor device according to claim 1, wherein the first and second compound layers are Ni-Al compound layers.