JP2010062379A - Condensing reflector unit and extreme ultraviolet light source device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an extreme ultraviolet light source device which eases working for exchanging a condensing reflector 4 or an aperture 5 and reduce cost. <P>SOLUTION: A laser beam is emitted to a material for high-temperature plasma from an energy beam irradiation machine 50, and vaporized Li or Sn arrives at an electric discharging area between discharging electrodes 20a and 20b. In this state, when a command is sent to a high-voltage pulse generator 11 from a controller 8, a high-temperature plasma is generated, and an EUV light emitted from the high-temperature plasma is reflected on a condensing reflector 4, so that it is introduced to an opening 5a of the aperture 5 and is emitted from an EUV light emitting section 6. The aperture 5 is optically positioned to the condensing reflector 4 and is fixed like a unit by a supporting member 7. Thus, the aperture 5 is positioned at an optimal place only by optically positioning the condensing reflector 4 only at an optimum place. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a condensing reflector unit and an extreme ultraviolet light source device applied to an extreme ultraviolet light source device (hereinafter also simply referred to as EUV light source device) that emits extreme ultraviolet light (hereinafter also simply referred to as EUV light). About. In particular, the present invention relates to a condensing reflector unit for an extreme ultraviolet light source device and an extreme ultraviolet light source device, which are expected to be used as an exposure light source for next-generation semiconductor integrated circuits.

As the semiconductor integrated circuit is miniaturized and highly integrated, an improvement in resolution is required for an exposure apparatus for manufacturing the semiconductor integrated circuit. In order to improve the resolution, it is common to use an exposure light source that emits light of a short wavelength. An excimer laser device is used as an exposure light source that emits light having a short wavelength, but an extreme ultraviolet light source device that emits extreme ultraviolet light having a wavelength of 13.5 nm as an alternative light source for next-generation exposure. Development is underway.
As one method for generating extreme ultraviolet light, there is a method in which a high-density and high-temperature plasma is generated by heating and exciting a discharge gas including an extreme ultraviolet light radiation source, and the extreme ultraviolet light emitted from the plasma is taken out.
Extreme ultraviolet light source devices that employ such a method are roughly classified into an LPP (Laser Produced Plasma) method and a DPP (Discharge Produced Plasma) method, depending on the method of generating high-density and high-temperature plasma.

The LPP type extreme ultraviolet light source device emits laser light to a target made of raw materials including an extreme ultraviolet light radiation source, generates high-density high-temperature plasma by laser ablation, and emits extreme ultraviolet light emitted therefrom. Is to be used.
In addition, the DPP type extreme ultraviolet light source device generates a high-density high-temperature plasma by discharge by applying a high voltage between electrodes supplied with a discharge gas including an extreme ultraviolet light source, and is emitted from there. It uses extreme ultraviolet light.
Such a DPP type extreme ultraviolet light source device is advantageous in that the light source device can be made smaller and the power consumption of the light source system is smaller than that of the LPP type extreme ultraviolet light source device. Therefore, practical application is expected.

Xe (xenon) ions having about 10 valences are known as materials for generating the above-described high-density high-temperature plasma, but Li (lithium) ions, Sn ( Tin) ions are attracting attention.
For example, Sn is large because the extreme ultraviolet light conversion efficiency given by the ratio between the electric input necessary for generating high-density and high-temperature plasma and the radiation intensity of extreme ultraviolet light having a wavelength of 13.5 nm is several times larger than Xe. It is expected as a radiation source to obtain output extreme ultraviolet light. For example, as shown in Patent Document 1, development of an extreme ultraviolet light source device using, for example, SnH ₄ (stannane) gas as an extreme ultraviolet light radiation source has been advanced.
In recent years, in the above DPP method, solid or liquid Sn or Li supplied to the electrode surface where discharge occurs is vaporized by irradiating with an energy beam such as a laser beam, and then high temperature plasma is generated by discharge. A generation method is disclosed in Non-Patent Document 1.

FIG. 4 is a diagram for simply explaining the configuration of the EUV light source apparatus.
The EUV light source device includes a first chamber 1 in which a pair of disc-shaped discharge electrodes 20a and 20b and a condenser reflector 4 are accommodated, and a second chamber 2 in which an aperture member 5 is accommodated. Yes. The first chamber 1 and the second chamber 2 are connected via a gate valve G. When the gate valve G is opened, the internal spaces communicate with each other, and when the gate valve G is closed, the respective spaces are connected. Is shut off by the gate valve G.
The first chamber 1 is divided into a discharge part 1a and an EUV light collecting part 1b by a foil trap 3. A pair of disc-shaped discharge electrodes 20a and 20b are disposed in the discharge part 1a, and the pair of disk-shaped electrodes 20a and 20b are disposed vertically on the paper surface of FIG. 4 with the insulating member 20c interposed therebetween. A rotating shaft 20e of a motor 20d is attached to the discharge electrode 20b located below the paper surface.
The discharge electrodes 20a and 20b are connected to the high voltage pulse generator 11 through sliders 20g and 20h. A groove 21b is provided in the periphery of the discharge electrode 20b, and a solid material (Li or Sn) for generating high-temperature plasma is disposed in the groove 21b.
A condensing reflecting mirror 4 is disposed in the EUV condensing unit 1b. A condensing / reflecting mirror position adjusting mechanism 9 for optically positioning the condensing / reflecting mirror 4 at a predetermined location is attached to the bottom surface of the condensing / reflecting mirror cover 40.

FIG. 5 is a schematic diagram for explaining the condensing reflector position adjusting mechanism 9.
The condensing / reflecting mirror position adjusting mechanism 9 shown in the figure moves the condensing / reflecting mirror 4 in the X-axis, Y-axis, and Z-axis directions, and in the θ1 direction and θ2 direction, and positions the condensing / reflecting mirror 4. . In the figure, θ1 is the rotation direction between the Y axis and the Z axis (the rotation of the XY plane between the Y axis and the Z axis), and θ2 is the rotation direction between the Z axis and the X axis (XY plane). Of the Z axis-X axis direction).
Returning to FIG. 4, the condensing reflector 4 is arranged at an optimum place determined by the condensing reflector position adjusting mechanism 9 in relation to the high temperature plasma formed between the discharge electrodes 20 a and 20 b.
An aperture member 5 is accommodated in the second chamber 2. The aperture member 5 is formed with an EUV light exit opening 5a having a predetermined size (for example, φ4.6 mm) at the center thereof, and has a donut shape as a whole. In the aperture member 5, the EUV light emission opening 5 a is disposed at a position where the EUV light reflected by the condensing reflecting mirror 4 is collected. The aperture member position adjusting mechanism 10 is attached to the aperture member 5.

FIG. 6 is a schematic diagram for explaining the aperture member position adjusting mechanism 10.
The aperture member position adjusting mechanism 10 shown in the figure positions the aperture member 5 by moving the aperture member 5 in the X-axis, Y-axis, and Z-axis directions. The aperture member 5 is disposed at an optimal place determined by the aperture member 10 in relation to the condenser reflector 4.

In the EUV light source device described above, an energy beam such as a laser beam is applied from the energy beam irradiator 50 through the laser irradiation window 51 and the mirror 51a to the high temperature plasma raw material M arranged in the groove 21b of the discharge electrode 20b. By irradiation, the solid raw material Li or Sn is vaporized between the discharge electrodes 20a and 20b. In this state, the pulse power is supplied from the high voltage pulse generator 11 between the discharge electrodes 20a and 20b, so that the edge portion of the discharge electrode 20a and the edge portion provided in the peripheral portion of the discharge electrode 20b. Discharge occurs between them, and EUV light is emitted.
The emitted EUV light enters the EUV condensing part 1b from the discharge part 1a via the foil trap 3, is collected by the condensing reflecting mirror 4, passes through the aperture member 5, and then from the EUV light emitting part 6. Exit.
“Current Status and Future Prospects of Research on EUV (Extreme Ultraviolet) Light Source for Lithography” J. Plasma Fusion Res. March 2003, Vol. 79. No. 3, P219-260

However, the EUV light source device shown in FIG. 4 has practical problems as described below.
In the EUV light source device, the condensing reflector 4 and the aperture member 5 are optimal for the plasma formed between the pair of discharge electrodes 20a and 20b so that EUV light can be emitted without waste. It is necessary to place it in position. For example, when exchanging the condensing reflecting mirror 4 or the like whose reflectivity of extreme ultraviolet light has decreased by using it for a long time with a new one, the condensing reflecting mirror 4 and the aperture member 5 are changed as follows. Need to be arranged at predetermined positions.
First, in the first chamber 1, the condenser reflector 4 is moved in the X-axis, Y-axis, and Z-axis directions, and the θ1 and θ2 directions by the condenser reflector position adjustment mechanism 9, and the condenser reflector 4 is placed in an optimal position.

Thereafter, the gate valve G is closed, the internal space of the first chamber 1 is exhausted by the exhaust units 1c and 1d, and the internal space of the second chamber 2 is exhausted by the exhaust unit 2d to be in a vacuum state, as described above. Thus, a discharge is generated between the pair of discharge electrodes 20a and 20b to emit EUV light.
In this state, the gate valve G is opened to guide the extreme ultraviolet light to the inside of the second chamber 2, and in the second chamber 2, the aperture member 5 is moved by the aperture member position adjusting mechanism 10 to the X axis, Y The aperture member 5 is fixed at an optimum position by moving in the axial direction and the Z-axis direction. In this operation, the radiation intensity distribution of the EUV light emitted from the EUV light emission opening 5a of the aperture member 5 is measured using, for example, an EUV filter and a photodiode or a CCD camera (not shown), and a predetermined radiation intensity distribution is obtained. Do until.

As described above, in the conventional EUV light source device, when the condenser reflector 4 is replaced with a new one or when the aperture member 5 is replaced with a new one, the condenser reflector 4 is connected to the discharge electrode 20a, After optimal positioning in relation to 20b, it is necessary to optimally position the aperture member 5 in relation to the condenser reflector 4 while actually emitting EUV light, and these operations are complicated. There was a problem.
Separately from the first chamber in which the discharge electrodes 20a and 20b and the condenser reflector 4 are accommodated, the interiors of the second chamber 2 and the second chamber 2 for accommodating the aperture member 5 are exhausted. Since it is necessary to provide the gas exhaust unit 2d for making a vacuum state, there is a problem that the cost of the EUV light source device increases due to the complicated configuration of the EUV light source device.
The present invention has been made in view of the circumstances as described above, and can easily perform the work for exchanging the condensing reflector 4 or the aperture member 5, as well as for the EUV light source device. An object of the present invention is to provide an extreme ultraviolet light source device capable of reducing the cost.

In the present invention, the above problem is solved as follows.
(1) The condensing reflector and the aperture member are optically positioned and connected via a support member to form a unit. That is, the condenser reflector and the aperture member are optically arranged so that the center of the aperture opening is on the optical axis of the condenser reflector and the aperture member is positioned in the vicinity of the condensing position of the condenser reflector. The unit is positioned and unitized to form a condenser mirror unit for an extreme ultraviolet light source.
And when exchanging the condensing reflective mirror 4 and the aperture member 5 for a new thing, the unitized condensing reflective mirror and aperture member are replaced per unit.
(2) a chamber, raw material supply means for supplying a raw material for emitting extreme ultraviolet light into the chamber, energy beam irradiation means for irradiating the surface of the raw material with an energy beam to vaporize the raw material, and vaporization A pair of discharge electrodes for generating heat plasma by heating and exciting the raw material in the chamber by discharge; pulse power supply means for supplying pulse power to the discharge electrodes; and radiation from the high temperature plasma An extreme ultraviolet light source device comprising: a condensing reflector for collecting extreme ultraviolet light; and an aperture member having an extreme ultraviolet light exit aperture for narrowing the extreme ultraviolet light emitted from the high temperature plasma to a predetermined size. The aperture member is optically positioned with respect to the condenser reflector, and is fixed to the condenser reflector, and the aperture Over member is movable secured the condensing reflector, providing the collecting mirror reflector positioning mechanism.

(1) The condensing reflector unit for an extreme ultraviolet light source according to the present invention is fixed and unitized in a state where the aperture member is optically positioned with respect to the condensing reflector.
For this reason, the aperture member is also positioned at the optimum place only by positioning only the condenser mirror at the optically optimum place. In other words, when replacing the condenser reflector or aperture member with a new one, it is freed from the trouble of positioning the condenser reflector and the aperture member separately.
(2) In the EUV light source device of the present invention, the aperture member is fixed in a state where it is optically positioned with respect to the condensing reflector, and the condensing mirror that moves the condensing reflector to which the aperture member is fixed. A reflecting mirror position adjusting mechanism is provided.
That is, the EUV light source device of the present invention is fixed in a state where the aperture member is optically positioned with respect to the condensing reflection mirror in advance, so that only the condensing reflection mirror is optically positioned at an optimal place. It is only necessary to position the aperture member separately from the condenser reflector.
In other words, according to the EUV light source device of the present invention, when replacing the condenser reflector or aperture member with a new one, it is freed from the trouble of positioning the condenser reflector and aperture member separately.
In addition, since the condenser reflector and the aperture member are integrated, only one chamber and gas exhaust unit are required to accommodate the condenser reflector and the aperture member. Can be simplified and the cost of the EUV light source device can be reduced.

FIG. 1 is a diagram showing a schematic configuration of an EUV light source apparatus according to an embodiment of the present invention.
In the EUV light source device, the interior of the chamber 1 is partitioned by a foil trap 3 into a discharge part 1a and an EUV condensing part 1b.
A pair of disc-shaped discharge electrodes 20a and 20b are arranged in the discharge part 1a so as to face each other with the insulating member 20c interposed therebetween.
The respective centers of the discharge electrodes 20a and 20b are arranged coaxially. A rotating shaft 20e of a motor 20d is attached to the discharge electrode 20b located on the lower side in the drawing. In the rotary shaft 20e, the center of the discharge electrode 20a and the center of the discharge electrode 20b are located on the same axis as the rotary shaft 20e. The rotating shaft 20e is introduced into the chamber 1 through a mechanical seal 20f.
The mechanical seal 20f allows rotation of the rotating shaft 20e while maintaining a reduced pressure atmosphere in the chamber 1.

Sliders 20g and 20h made of, for example, a carbon brush or the like are provided below the discharge electrode 20b.
The slider 20g is electrically connected to the discharge electrode 20a through a through hole provided in the discharge electrode 20b. The slider 20h is electrically connected to the discharge electrode 20b.
The high voltage pulse generator 11 supplies pulse power to the discharge electrodes 20a and 20b via the sliders 20g and 20h, respectively.

The peripheral portions of the disc-shaped discharge electrodes 20a and 20b are formed in an edge shape. When power is supplied from the high voltage pulse generator 11 to the discharge electrodes 20a and 20b, a discharge is generated between the edge portions of both electrodes.
When discharge occurs, the peripheral portions of the discharge electrodes 20a and 20b become high temperature due to discharge, so the discharge electrodes 20a and 20b are made of a high melting point metal such as tungsten, molybdenum, or tantalum. The insulating member 20c is made of silicon nitride, aluminum nitride, diamond, or the like.
A liquid or solid material for generating high temperature plasma is disposed in the groove 21b of the discharge electrode 20b.

The chamber 1 is provided with an energy beam irradiator 50 for irradiating the raw material M with a laser beam. The energy beam emitted from the energy beam irradiator 50 is, for example, a laser beam.
An energy beam such as a laser beam is irradiated from the energy beam irradiator 50 through the laser irradiation window 51 and the mirror 51a to the high temperature plasma raw material disposed in the groove 21b of the discharge electrode 20b. As a result, the solid raw material Li or Sn is vaporized between the discharge electrodes 20a and 20b.
A foil trap 3 is held on a partition wall that partitions the discharge unit 1a and the EUV collector 1b.
The foil trap 3 is provided in order to suppress the debris generated based on the material constituting the discharge electrode and the raw material M for generating high temperature plasma from being scattered toward the condensing reflecting mirror 4. The foil trap 3 is formed with a plurality of narrow spaces partitioned by a plurality of thin plates extending radially.

A condensing reflecting mirror 4 is disposed in the EUV condensing unit 1b. The light reflecting mirror 4 is formed with a light reflecting surface for reflecting EUV light having a wavelength of 13.5 nm emitted from high temperature plasma.
The condensing reflecting mirror 4 includes a condensing reflecting mirror cover 40 and a plurality of light reflecting surfaces 4 a arranged in a nested manner without contacting each other inside the condensing reflecting mirror cover 40. Each light reflecting surface 4a is formed by densely coating a metal such as Ru (ruthenium), Mo (molybdenum), Rh (rhodium) on the reflecting surface side of the base material having a smooth surface made of Ni (nickel) or the like. In this case, extreme ultraviolet light having an incident angle of 0 to 25 ° is reflected well.
A condensing / reflecting mirror position adjusting mechanism 9 for arranging the condensing / reflecting mirror 4 at an optimal location in relation to the discharge electrodes 20 a and 20 b is attached to the bottom surface of the condensing mirror 4. The condensing / reflecting position adjusting mechanism 9 has the same configuration as that shown in FIG. By moving in the θ2 direction, the condenser reflector 4 is positioned at an optically optimal place.

An aperture member 5 is arranged in the light emitting direction of the condenser reflector 4.
The aperture member 5 is provided with an EUV light exit opening 5a having a diameter of 4.6 mm at the center, and has a donut shape as a whole, and portions other than the EUV light exit opening do not transmit extreme ultraviolet light.
The condensing reflecting mirror 4 and the aperture member 5 are, for example, at a position (also referred to as an intermediate condensing point P) where EUV light reflected by the condensing reflecting mirror 4 is collected at the EUV light exit opening 5a of the aperture member 5. In the state of being arranged in the vicinity, and arranged so as to be spaced apart from each other in the outer peripheral direction of the condenser reflector 4 so that the center of the opening 5a of the aperture member 5 is located on the optical axis of the condenser reflector 4 It is integrated with the condenser mirror 4 via a plurality of rod-like support members 7.
That is, the aperture member 5 is optimally aligned with the condensing reflector 4 so that EUV light can be taken out without waste.
Each support member 7 has one end connected to the end of the light collecting / reflecting mirror 4 on the light emitting direction side and the other end connected to the aperture member 5, whereby the optical axis of the light collecting / reflecting mirror 4. It extends in the direction. Each support member 7 is made of, for example, a material such as SUS304 (stainless steel) in order to avoid an excessively high temperature state due to heat transfer from the condenser reflector 4.

2 and 3 show the configuration of the condenser reflector 4, the aperture member 5 and the support member 7, and a method for fixing the support member 7 to the condenser reflector 4 and the aperture member 5. FIG.
The condensing reflector 4 shown in FIG. 2A includes a condensing reflector cover 40. The condensing / reflecting cover 40 has a flange portion 41 extending in the direction perpendicular to the optical axis, and support member fixing screw holes 41a (female screw holes) are equally spaced in the circumferential direction on the side peripheral surface of the flange portion 41. The two are separated by two at a distance.
The support member fixing hole 5b for fixing the support member 7 is also cut in the aperture member 5 shown in FIG. The EUV light exit opening 5a of the aperture member 5 is formed in a fan shape that becomes wider as it goes in the light exit direction so as not to disturb the EUV light emission behind the condensing point.

The support member 7 shown in FIG. 3C is composed of a condenser reflector fixing portion 7a, an aperture member fixing portion 7c, and a support rod 7b. These are integrated, and two holes are cut in the condenser reflector fixing portion 7a, and one hole is cut in the aperture member fixing portion 7c. The condensing reflector 4 and the aperture member 5 are integrated by using four support members 7. Parameters important in designing and producing the support member 7, that is, the angle formed by the condenser reflecting mirror fixing portion 7a and the support rod 7b, the angle formed by the aperture member fixing portion 7c and the support rod 7b, and the length of the support rod 7 The height is determined by optimally arranging the condenser reflector 4 and the aperture member 5 geometrically.
FIG. 3D shows an integral structure of the condenser reflector 4 and the aperture member 5. The condensing reflecting mirror 4 and the condensing reflecting mirror fixing portion 7a, and the aperture member 5 and the aperture member fixing portion 7c are fixed by bolts. Since the aperture member 5 is fixed to the condenser reflector 4 via the four support members 7, the aperture member 5 does not deviate from the optical axis. The condenser reflector 4 and the aperture member 5 are unitized by mechanically fixing the aperture member 5 in an optically positioned state with respect to the condenser reflector 4.
Returning to FIG. 1, in the chamber 1, gas exhaust units 1 c and 1 d for exhausting the discharge unit 1 a and the EUV collector 1 b to make a vacuum state, and EUV for emitting EUV light to the outside of the chamber 1. A light emitting portion 6 is provided.
The controller 8 controls operations of the high voltage pulse generator 11, the motor 20d, the gas exhaust units 1c and 1d, and the energy beam irradiator 50.

Below, an example of operation | movement of the EUV light source device which concerns on this invention is demonstrated.
In response to a command from the control unit 8, the motor 20d drives the discharge electrodes 20a and 20b to rotate in the circumferential direction.
In response to a command from the control unit 8, the raw material for high-temperature plasma arranged in the groove 21b of the discharge electrode 20b is irradiated with a laser beam from the energy beam irradiator 50 through the laser incident window 51 and the mirror 51a. Vaporized Li or Sn reaches the discharge region between the discharge electrodes 20a and 20b. In this state, a command is transmitted from the control unit 8 to the high voltage pulse generation unit 11.
The high voltage pulse generator 11 supplies a pulse voltage to the discharge electrodes 20a and 20b, and high temperature plasma is generated between the edges of the discharge electrodes 20a and 20b. The EUV light radiated from the high-temperature plasma is introduced into the EUV light exit opening 5a provided in the aperture member 5 by being reflected directly or by the condenser reflector 4, and the EUV light that has passed through the EUV light exit opening 5a. Only the light exits from the EUV light exit 6 to the outside of the chamber 1.

As described above, in the EUV light source device of the present invention, the aperture member 5 is fixed in a state where it is positioned optically optimally with respect to the condensing reflector 4, so that the condensing reflector position adjusting mechanism 9, all the optical position adjustment of the condensing / reflecting mirror 4 and the aperture member 5 with respect to the discharge electrodes 20a and 20b is completed only by positioning the condensing / reflecting mirror 4 at an optically optimal place.
The greatest advantage of the EUV light source device of the present invention is that the condensing reflector 4 and the aperture 5 are unitized, so the concentrating reflector 4 and the aperture member 5 are made new by visiting the EUV light source device delivery destination or the like. When exchanging, it is only necessary to replace each unit and position the condensing reflector 4 at an optically optimal place, and it is freed from the extremely troublesome work of adjusting the position of the condensing reflector 4 and the aperture member 5 separately. There is to be.
In addition, according to the EUV light source apparatus of the present invention, since the condenser reflector and the aperture member are unitized, one chamber and a gas exhaust unit required to accommodate the condenser reflector and the aperture member are provided. Therefore, the configuration of the EUV light source device is simplified, and the cost of the EUV light source device can be reduced.

It is a figure which shows schematic structure of the EUV light source device of the Example of this invention. It is a figure which shows the structure of a condensing reflective mirror, an aperture member, and a supporting member in the Example of this invention. It is a figure which shows the structure which fixed the support member with respect to the condensing reflector and the aperture member in the Example of this invention. It is a figure explaining simply the composition of the conventional EUV light source device. It is a schematic diagram explaining a condensing reflector position adjustment mechanism. It is a schematic diagram explaining an aperture member position adjustment mechanism.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Chamber 1a Discharge part 1b EUV condensing part 1c Gas exhaust unit 1d Gas exhaust unit 3 Wheel trap 4 Condensing reflecting mirror 4a Light reflecting surface 5 Aperture member 5a Opening 6 EUV light emission part 7 Support member 8 Control part 9 Condensing mirror Position adjustment mechanism 11 High voltage pulse generator 20a First discharge electrode 20b Second discharge electrode 20c Insulating member 20d Motor 20e Rotating shaft 40 Condensing reflector cover 50 Energy beam irradiator 51 Mirror 51a Laser incident window

Claims (2)

A condensing reflector unit comprising a condensing reflector for collecting extreme ultraviolet light and an aperture member having an aperture for narrowing the collected extreme ultraviolet light to a predetermined size, The condensing reflecting mirror and the aperture member are optically positioned with one end fixed to the condensing reflecting mirror and the other end connected via a support member fixed to the aperture member. A condensing reflector unit for an extreme ultraviolet light source device. A chamber;
A raw material supply means for supplying a raw material for emitting extreme ultraviolet light into the chamber;
Energy beam irradiation means for irradiating the surface of the raw material with an energy beam to vaporize the raw material;
A pair of discharge electrodes for heating and exciting the vaporized raw material in the chamber by discharge to generate high-temperature plasma;
Pulse power supply means for supplying pulse power to the discharge electrode;
A condenser reflector for collecting extreme ultraviolet light emitted from the high-temperature plasma;
An extreme ultraviolet light source device comprising an aperture member having an extreme ultraviolet light exit aperture for narrowing the extreme ultraviolet light emitted from the high temperature plasma to a predetermined size,
In a state where the aperture member is optically positioned with respect to the condenser reflector, the aperture member is fixed to the condenser reflector,
An extreme ultraviolet light source device, characterized in that a condensing reflector position adjusting mechanism is provided for moving the condensing reflector with the aperture member fixed thereto.

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