JP2010059509A - Film formation or surface treatment system and method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a technique which reduces variation in a gas flow rate due to gap variation between a local gas supply/exhaust mechanism and a substrate caused by the winding of the substrate or the like, and film formation and surface treatment are stabilized. <P>SOLUTION: The local gas supply/exhaust mechanism 4 includes: an upper cover 41; an inner wall 43 surrounding the center of the upper cover 41 which is provided from the bottom face of the upper cover 41 to the direction of a substrate 16 to which film formation or surface treatment is performed; and an outer wall 42 surrounding the inner wall 43 which is provided from the bottom face of the upper cover 41 to the direction of the substrate 16, wherein, a gas is introduced into a reaction chamber 52 at the inside of the inner wall 43 and the gas is exhausted from an exhaust chamber 50 between the inner wall 43 and the outer wall 42. The faces on the open sides in the outer wall 42 and the inner wall 43 of the local gas supply/exhaust mechanism 4 have a labyrinth structure 45 in which grooves are formed. Further, a pressure measurement means for the reaction chamber 52 is provided, and the height of the local gas supply/exhaust mechanism 4 is adjusted based on the measured result thereby. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a manufacturing method and a manufacturing apparatus for locally forming a film or surface treatment, and particularly to a technique for locally forming a film or surface treatment by flowing a gas into a reaction chamber.

  The liquid crystal display element has a structure in which liquid crystal is sandwiched between a TFT substrate having a circuit formed on a glass substrate and a color filter substrate. When a defect occurs in a circuit or a color filter, the liquid crystal display element becomes abnormal in display and becomes a defective product. Glass substrates used in the manufacturing process are becoming larger year by year, and it is difficult to manufacture a defect-free liquid crystal display element only by improving the process. Therefore, a technique for correcting a defective portion is essential.

  Conventionally, as a method for correcting a circuit open defect, a method of locally forming a metal film or an insulating film on a defective portion on a substrate using a laser CVD apparatus or a microplasma generator is known. The laser CVD apparatus is an apparatus for forming a film by irradiating a substrate in a source gas atmosphere with a laser beam to promote the reaction of the source gas in the irradiated portion. The microplasma generator is an apparatus for forming a film by introducing a source gas into a reaction chamber to generate a microplasma, and promoting the reaction of the source gas by the plasma. In any apparatus, a technique for collecting the raw material gas and preventing it from leaking to the surroundings is required. Further, when outside air is mixed into the raw material gas, the quality of the film is deteriorated, so a technique for preventing the outside air from flowing into the reaction chamber is necessary.

  Due to the increase in size of the glass substrate, the length of one side exceeds 2 m. For this reason, enclosing the entire substrate in a chamber entails a problem that the apparatus becomes enormous and not only it takes time to replace the inside of the chamber with an inert gas such as argon, but also the cost of the inert gas increases. Therefore, when a film is locally formed by a laser CVD apparatus or a microplasma generator, a method of forming a film by attaching a local gas intake / exhaust mechanism is employed as disclosed in Patent Document 1. When the local gas intake / exhaust mechanism is used, only the reaction region can be covered with the reaction chamber to create an inert atmosphere, so that a huge chamber is not required and the replacement time of the inert gas can be shortened.

  The local gas intake / exhaust mechanism has a structure in which a plurality of shells are stacked, and the innermost shell is a reaction chamber for introducing a source gas or a plasma generating gas to perform film formation or surface treatment, The gas leaking from the reaction chamber in the outer shell is sucked. One of these shells is opened, and the opened surface is placed on a substrate on which film formation or surface treatment is performed with a certain gap. Since it is necessary to keep the concentration and pressure of the source gas and plasma generating gas supplied to the reaction chamber constant, new gas is always supplied to the reaction chamber to replace the reacted gas. Therefore, it is important to stabilize the exhaust flow rate so that the reacted gas is quickly exhausted.

  Patent Document 2 describes a plasma processing apparatus having a structure different from the above structure. The plasma processing apparatus of Patent Document 2 includes a discharge port that discharges a processing gas that has been converted to plasma in a plasma generation unit toward a substrate, an exhaust port that is provided at an appropriate distance from the discharge port, and an exhaust port. And an exhaust means for exhausting the treated waste gas, a labyrinth seal portion provided on the outer periphery of the plasma generating portion, and an inert gas supply means for supplying an inert gas between the labyrinth seal portion and the substrate. To do. The plasma generating part of Patent Document 2 is provided corresponding to the width of the substrate (see FIG. 1), and whether a slit-like exhaust port is provided on the right side of the slit-like discharge port in parallel therewith (FIGS. 2 and 3). Reference) and the same exhaust port are provided on both sides (left and right) of the discharge port (see FIG. 7).

JP-T-1-502149 JP 2003-51490 A

  However, if the gap between the local gas intake / exhaust mechanism and the substrate fluctuates due to the undulation of the substrate or the like, there is a problem that the gas flow rate fluctuates and film formation abnormality or surface treatment abnormality occurs.

  An object of the present invention is to reduce gas flow rate fluctuations due to fluctuations in the gap between the local gas intake / exhaust mechanism and the substrate due to substrate waviness and the like, and to stabilize film formation and surface treatment.

  As the above solution, the local gas intake / exhaust mechanism includes an upper lid, an inner wall surrounding the center of the upper lid provided in the direction of the substrate from the bottom surface of the upper lid, and the above-mentioned provided in the direction of the substrate from the bottom surface of the upper lid. The labyrinth structure has an outer wall surrounding the inner wall, and a groove is formed on the outer wall and / or the open side surface of the inner wall. In addition, a measurement unit for measuring the pressure in the reaction chamber was provided, and the height of the local gas intake / exhaust mechanism was adjusted based on the measurement result.

  By using the present invention, it is possible to reduce the variation in film quality of the formed film and improve the uniformity of surface modification, and to prevent the occurrence of defects, so that the manufacturing cost can be reduced.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

  FIG. 1 shows the configuration of the local film forming apparatus 20. The plasma generation chamber 1 includes a quartz tube 2 which is an insulator, a coil 3 wound around the quartz tube 2, and an igniter 9 for plasma ignition connected to the upper portion of the quartz tube 2. A high frequency power source 7 and a high frequency matching box 8 are connected to one side of the coil 3, and the other side is grounded. The lower part of the quartz tube 2 protrudes into the reaction chamber 52 through the through hole of the local gas intake / exhaust mechanism 4. The source gas and the plasma gas are supplied from the source gas container 10 and the plasma gas container 11, respectively, and a mass flow controller 12 for controlling the gas flow rate is attached to the piping part. As for the source gas, the piping is branched in front of the quartz tube 2 and can be blown out from the nozzle 6 in the vicinity of the microplasma 5. When plasma is ignited by the igniter 9 in a state where a plasma gas is supplied to the quartz tube 2 and a high frequency voltage is applied to the coil 3, microplasma 5 is generated from the tip of the quartz tube 2. When the source gas is reacted with the microplasma 5, a film can be formed on the substrate 16. A raw material gas and a plasma gas are continuously supplied from the quartz tube 2 and discharged from the reaction chamber 52 after the reaction. A gas suction port 44 is formed in the exhaust chamber 50 and a gas exhaust pipe 14 is connected thereto. The gas exhaust pipe 14 is connected to an exhaust pump 17 via a suction valve 15. The exhaust chamber 50 is sucked by the suction pump 17, and the gas discharged from the reaction chamber 52 is taken into the exhaust chamber 50 and exhausted through the exhaust pipe 14 and the suction valve 15.

  FIG. 2 shows a structural example of the local gas intake / exhaust mechanism 4. The local gas intake / exhaust mechanism 4 has an outer wall 42 and an inner wall 43, and the upper surface of the outer wall 42 and the upper surface of the inner wall 43 are joined to the bottom surface of the upper lid 41 and sealed so as not to leak gas. A through hole for passing the quartz tube 2 is formed at the center of the upper lid 41 and is sealed to prevent gas from leaking from the gap between the through hole and the quartz tube 2. The quartz tube 2 protrudes into the reaction chamber 52 formed inside the inner wall 43, and the microplasma 5 is ejected from the tip. A gas suction port 44 is formed in the upper lid 41 for exhausting the gas in the exhaust chamber 50 between the outer wall 42 and the inner wall 43. The plasma gas and the source gas enter the exhaust chamber 50 from the reaction chamber 52 through the gap between the inner wall 43 and the substrate 16 and flow to the gas suction port 44. Also, the outside air existing around the outer wall 42 enters the exhaust chamber 50 through the gap between the outer wall 42 and the substrate 16 and flows to the gas suction port 44. A gas exhaust pipe 14 shown in FIG. 1 is connected to the gas suction port 44. In FIG. 2, the gas suction port 44 is formed on the upper lid 41, but it may be formed on the side surface of the outer wall 42 as shown in FIG. 3. When there are a plurality of gas suction ports 44, the same suction pump 17 can be used by exhausting individually by the suction pump 17 or by joining the gas exhaust pipes 14 connected to the respective gas suction ports 44 by the suction valve 15. The method of exhausting by may be used.

  A labyrinth structure 45 is formed on the outer wall 42 and the inner wall 43. The labyrinth structure 45 has a structure in which gas flow paths are complicated so as to increase the pressure loss of the gas flow path through the gap between the outer wall 42 and the substrate 16 and reduce the flow rate of gas passing through the gap. This is the structure. Although details will be described later, by forming the labyrinth structure 45, there is an effect of stabilizing the gas flow rate even with respect to the fluctuation of the gap.

  The local gas intake / exhaust mechanism 4 shown in FIG. 2 includes an upper lid 41, an inner wall 43 surrounding the center of the upper lid 41 provided in the direction from the bottom surface of the upper lid 41 toward the substrate 16, and a bottom surface of the upper lid 41. And an outer wall 42 surrounding the inner wall 43 provided in the direction of the gas. The gas is introduced into the reaction chamber 52 inside the inner wall 43, and the gas is exhausted from the exhaust chamber 50 between the inner wall 43 and the outer wall 42. Therefore, the gas in the reaction chamber 52 is exhausted in either direction, and the labyrinth structure 45 is formed on the outer wall 42 and the inner wall 43, so that the gas flow rate can be stabilized against fluctuations in the gap. .

  Although FIG. 2 shows an example in which the outer wall 42 and the inner wall 43 have a cylindrical structure, a rectangular parallelepiped shape may be used as shown in FIG. The shapes of the inner wall 43 and the outer wall 42 viewed from the substrate 16 side are square. In this case, the gas in the reaction chamber 52 is exhausted in either direction, and a labyrinth structure 45 is formed on the outer wall 42 and the inner wall 43. Therefore, the gas flow rate can be stabilized against the fluctuation of the gap.

  Furthermore, in order to exhaust the gas flowing through the gap between the outer wall 42 and the inner wall 43 and the substrate 16 to the gas suction port 44 more uniformly, the following structure is desirable. First, in order to equalize the flow path lengths of the gas flowing through the gap, the wall thickness of the outer wall 42 and the wall thickness of the inner wall 43 are made uniform. Secondly, when there are a plurality of gas suction ports 44, they are arranged so as to be symmetric with respect to the central axis of the quartz tube 2, and the conductance of the gas exhaust tube 14 connecting each gas suction port 44 and the suction valve 15. To be equal. For example, when the number of the exhaust pumps 17 is one, the lengths of the gas exhaust pipes 14 to the respective gas suction ports 44 and the suction valves 15 are generally different. Therefore, the cross-sectional area of the relatively long gas exhaust pipe 14 may be increased and the cross-sectional area of the relatively short gas exhaust pipe 14 may be decreased. Third, for example, as shown in FIG. 5, a space serving as a buffer region 51 is formed on the upstream side of the gas suction port 44. By providing the buffer region 51 larger than the volume of the exhaust chamber 50, it is possible to reduce the variation in the suction pressure of each gas suction port 44, and the gas in the exhaust chamber 50 can be exhausted uniformly. In this structure, only one gas inlet 44 may be used.

  When the microplasma 5 is generated, the temperature at the tip of the microplasma 5 becomes several hundred degrees, and the temperature in the reaction chamber 52 also rises. Therefore, the material used for the local gas intake / exhaust mechanism 4 needs to have heat resistance. From this viewpoint, metal, ceramic, or quartz can be used. The advantage of using a metal is that it can be processed into a complicated shape by using a material that can be easily cut. However, the reaction chamber 52 is enlarged so that the microplasma 5 is not affected by the conductor. Ideally, the distance between the microplasma 5 and the inner wall 43 should be 20 mm or more. The advantage of using ceramics is that the reaction chamber 52 can be made smaller because it is an insulator. The advantage of using quartz is that it is an insulator and is transparent. A camera is attached to the outside of the local gas intake / exhaust mechanism 4 to monitor the generation state of the microplasma 5, to evaluate the state of the microplasma 5 by image recognition, to generate an alarm if abnormal, It is possible to finely adjust the applied voltage and the impedance matching by evaluating the generation state of the microplasma 5 by attaching. These materials may be used alone or in combination. For example, a quartz window can be attached to a ceramic housing.

  Next, the shape of the labyrinth structure 45 will be described. FIG. 6B shows a view of the local gas intake / exhaust mechanism 4 as viewed from the substrate 16 side, and FIG. 6A shows an A-A ′ cross section of the local gas intake / exhaust mechanism 4. The labyrinth structure 45 is a structure for increasing the pressure loss of the gas flow path flowing through the gap with the substrate 16 by reducing the flow rate of the gas passing through the gap by making the gas flow path complicated. is there. The labyrinth structure 45 has a plurality of constricted pieces 47 formed concentrically, and the concave and convex shape is continuous when viewed from the side. Hereinafter, the recess is referred to as a circular groove 46. When the gas flows through the gap between the labyrinth structure 45 and the substrate 16, first, the flow path is narrowed by the throttle piece 47 on the entrance side, so that the gas flow rate increases. As the flow speeds up, the pressure drop increases by Bernoulli's theorem. Further, the gas that has flowed into the circular groove 46 from the throttle piece 47 decreases in velocity when the flow path area increases and flows in the direction of the next throttle piece 47 while spreading. At this time, part of the gas forms a vortex in the upper part of the circular groove 46, so that the flow path resistance increases and the pressure loss increases.

  As shown in FIG. 7A, the inlet side pressure and the outlet side pressure of the labyrinth structure 45 are made constant, and the gap between the throttle piece 47 of the labyrinth structure 45 and the substrate 16 is ε. FIG. 7B shows the relationship between the flow rate Q of the gas passing through the gap between the gap ε and the substrate 16. As a comparison, the relationship between the gap ε and the flow rate Q in the case of a smooth surface without the labyrinth structure 45 is shown. In the case of the labyrinth structure 45, the flow rate Q is proportional to the clearance ε, and in the case of a smooth surface, the flow rate Q is proportional to the cube of the clearance ε. The labyrinth structure 45 can reduce the flow rate in the usable gap ε region in consideration of the undulation of the substrate 16. Further, in the usable range, the inclination with the labyrinth structure 45 is smaller, and the fluctuation of the flow rate Q is smaller than the fluctuation of the gap ε.

  When the number of throttle pieces 47 is increased, the pressure loss can be further increased and the flow rate can be reduced. Therefore, if the number of throttle pieces 47 on the outer wall 42 is increased more than the inner wall 43, the amount of outside air taken in can be reduced while the pressure in the reaction chamber 52 is kept constant.

  In the embodiment, both the outer wall 42 and the inner wall 43 are the labyrinth structure 45, but only the outer wall 42 or only the inner wall 43 may be the labyrinth structure 45. When the flow rate of plasma gas or source gas into the reaction chamber 52 is large, the gas flows from the reaction chamber 52 to the gas suction port 44 by making only the bottom surface of the outer wall 42 the labyrinth structure 45 and the bottom surface of the inner wall 43 smooth. It becomes easy and gas does not stay in the reaction chamber 52. When the exhaust flow rate is large, if only the inner wall 43 is the labyrinth structure 45 and the outer wall 42 is a smooth surface, the amount of outside air taken in increases, so that the increase in the degree of vacuum can be suppressed.

  Another labyrinth structure 45 is shown in FIGS. 8B to 12B, the shape of the local gas intake / exhaust mechanism 4 viewed from below is shown, and FIG. 8A is a cross-sectional view of the local gas intake / exhaust mechanism 4 viewed from the side. 8 to 12, only the bottom surface of the outer wall 42 is shaped to increase the pressure loss, but only the bottom surface of the inner wall 43 or both the outer wall 42 and the bottom surface of the inner wall 43 may have the same shape. FIG. 8 shows a shape in which a spiral groove 61 is formed on the bottom surface. When the gas flows from the outside to the inside of the outer wall 42 by making it spiral, the gas is not only a radial velocity component but also a circumferential velocity component. Therefore, the gas flow path length is increased, and the pressure loss can be increased. For the gear-shaped groove 62 shown in FIG. 9, the wavy groove 63 shown in FIG. 11, and the rectangular groove 64 shown in FIG. 12, the gas flow path length is increased by giving the gas a circumferential velocity component in the same manner. Increase pressure loss. Further, FIG. 10 shows a structure in which the pitch of the gear-like grooves 62 in FIG. 9 is shifted, so that the gas that has passed through the radial grooves of the outer gear-like grooves 62 is moved in the circumferential direction by the inner circumferential grooves. Can have a velocity component.

  In the space formed by the local gas intake / exhaust mechanism 4 and the substrate 16, the vacuum is the highest in the vicinity of the gas inlet 44. When the gap between the local gas intake / exhaust mechanism 4 and the substrate 16 is reduced, the conductance is reduced and the pressure loss is increased, so that the degree of vacuum in the vicinity of the gas intake port 44 is increased. When the degree of vacuum increases, the suction pressure with respect to the substrate 16 of the local gas intake / exhaust mechanism 4 increases, and the substrate 16 is adsorbed by the local gas intake / exhaust mechanism. In order to prevent the adsorption, the height of the inner wall 43 may be made larger than the height of the outer wall 42. FIG. 13 shows a cross section of the local gas intake / exhaust mechanism 4 as seen from the side. Since the inner wall 43 is higher than the outer wall 42, the gap between the substrate 16 and the inner wall 43 is smaller than the gap between the outer wall 42. On the other hand, when the inner wall 43 has a large height, the gap between the outer wall 42 and the substrate 16 is widened and the outside air is easily taken in. Therefore, the increase in the suction pressure is reduced and the substrate 16 is adsorbed by the local gas intake / exhaust mechanism 4. Can be prevented. The structure of FIG. 13 can also be applied to Example 2 or Example 3 described below.

  In this embodiment, the local film forming apparatus 20 for generating the microplasma 5 and reacting the source gas is described. However, an apparatus (for example, a laser CVD apparatus) or a substrate for forming a film by locally controlling the gas flow. It can also be applied to a surface treatment apparatus.

  According to this embodiment, the gas flow rate fluctuation due to the gap fluctuation can be reduced, and highly uniform film formation and uniform surface treatment can be performed. Therefore, the occurrence of defects can be prevented and the cost can be reduced.

  FIG. 14 shows another embodiment. The local film forming apparatus 20 includes an X stage 120a, a Y stage 120b, and a Z stage 120c that move in the X, Y, and Z directions, respectively, and the Z stage 120c includes the head portion 21 of the local film forming apparatus 20. The head unit 21 includes a plasma generation chamber 1 and a local gas intake / exhaust mechanism 4. As the structure of the plasma generation chamber 1 and the local gas intake / exhaust mechanism 4 of this embodiment, the same structure as that of the above-described Embodiment 1 or Embodiments 3 and 4 described later can be used.

  Next, each component of the local film forming apparatus 20 will be described with reference to FIG. Storage unit 100 including local film forming apparatus 20, reaction condition storage unit 101, reaction position information storage unit 102, power application unit 111, power control unit 112, reaction gas flow rate control unit 113, argon gas flow rate control unit 114, and suction The plasma generating unit 110 includes a pump operating unit 115, and includes an XYZ stage 120 including a height measuring unit 121, a height adjusting unit 122, an XY position measuring unit 123, and an XY position adjusting unit 124. Further, as shown in FIG. 16, a pressure condition storage unit 103 and a pressure measurement result determination unit 104 are added to the storage unit 100, a pressure measurement unit 131 is added to the local gas intake / exhaust mechanism 4, and based on the pressure measurement result of the reaction chamber 52. Thus, a device that can adjust the height of the substrate 16 may be used.

  A height adjustment method in the apparatus configuration of FIG. 16 will be described with reference to FIG. In the embodiment, the local film forming apparatus 20 for generating the microplasma 5 and reacting the raw material gas is described. However, an apparatus (for example, a laser CVD apparatus) for forming a film by locally controlling the gas flow or the substrate surface is described. It can also be applied to a processing apparatus.

  FIG. 17 shows a flow from lowering the local gas intake / exhaust mechanism 4 to film formation and retracting the local gas intake / exhaust mechanism 4. First, the local gas intake / exhaust mechanism 4 is moved to the film formation region by the X stage and the Y stage. Then, the local gas intake / exhaust mechanism 4 is brought close to the substrate 16 by the Z stage. Next, the gas suction pump 17 is operated to start suction. Without generating the microplasma 5, an inert gas for plasma gas is introduced into the reaction chamber 52 to expel air and replace the reaction chamber 52 with an inert gas atmosphere. After the replacement, the pressure in the reaction chamber 52 is measured after controlling the mass flow controller 12 so that the flow rate of the inert gas is the same as that during film formation. If this measurement result is different from the preset optimum pressure, the height of the local gas intake / exhaust mechanism 4 is finely adjusted on the Z stage so as to be the same. When the pressure in the reaction chamber 52 is higher than the optimum pressure, the local gas intake / exhaust mechanism 4 can be separated from the substrate 16, and when it is lower, the local gas intake / exhaust mechanism 4 can be brought closer to the substrate 16 to match the optimum conditions. After the height adjustment, the source gas is introduced into the reaction chamber 52 to generate the microplasma 5. At this time, the source gas reacts with the microplasma 5 to form a film on the substrate 16. After the film formation, the generation of the microplasma 5 is stopped and the introduction of the source gas is stopped. When the inside of the reaction chamber 52 is replaced with the plasma gas, the supply of the plasma gas is stopped and the operation of the suction pump 17 is stopped. Finally, the local gas intake / exhaust mechanism 4 is retracted.

  According to this embodiment, the pressure in the reaction chamber 52 can be kept constant regardless of the fluctuation of the gap. In addition, since the height with respect to the substrate 16 is adjusted before the introduction of the raw material gas, it is possible to prevent the raw material gas from leaking due to a large gap with the substrate 16.

  A third embodiment of the present invention will be described below with reference to FIGS. In this embodiment, the local film forming apparatus 20 for generating the microplasma 5 and reacting the source gas is described. However, an apparatus (for example, a laser CVD apparatus) or a substrate for forming a film by locally controlling the gas flow. It can also be applied to a surface treatment apparatus.

  FIG. 18 shows the configuration of the local film forming apparatus 20 of the third embodiment. The plasma generation chamber 1 includes a quartz tube 2 as an insulator, a coil 3 wound around the quartz tube 2, and an igniter 9 for plasma ignition connected to the upper portion of the quartz tube 2. A high frequency power source 7 and a high frequency matching box 8 are connected to one side of the coil 3, and the other side is grounded. The lower part of the quartz tube 2 protrudes into the reaction chamber 52 through the through hole of the local gas intake / exhaust mechanism 4. The source gas and the plasma gas are supplied from the source gas container 10 and the plasma gas container 11, respectively, and a mass flow controller 12 for controlling the gas flow rate is attached to the piping part. A plasma gas supply pipe for supplying plasma gas from the plasma gas container 11 to the local gas intake / exhaust mechanism 4 is provided. As for the source gas, the piping is branched in front of the quartz tube 2 and can be blown out from the nozzle 6 in the vicinity of the microplasma 5. When plasma gas is supplied, microplasma 5 is generated from the tip of the quartz tube 2, and when the raw material gas is reacted with the microplasma 5, a film can be formed on the substrate 16.

  FIG. 19 shows the structure of the local gas intake / exhaust mechanism 4 of the embodiment. FIG. 19A is a side view of the cross section of the local gas intake / exhaust mechanism 4. The local gas intake / exhaust mechanism 4 includes an upper lid 41 and three walls having different diameters from the outer wall 42, the middle wall 48, and the inner wall 43 in order from the outside. The upper surfaces of the outer wall 42, the middle wall 48, and the inner wall 43 are joined to the bottom surface of the upper lid 41 and sealed so as not to leak gas. A through hole for passing the quartz tube 2 is formed at the center of the upper lid 41 and is sealed to prevent gas from leaking from the gap between the through hole and the quartz tube 2. The quartz tube 2 protrudes into the reaction chamber 52 formed inside the inner wall 43, and the microplasma 5 is ejected from the tip. A gas suction port 44 for exhausting gas is formed in the upper lid 41 between the middle wall 48 and the inner wall 43. The plasma gas and the raw material gas flow from the reaction chamber 52 through the gap between the inner wall 43 and the substrate 16 to the gas suction port 44. A gas blowout port 49 for supplying an inert gas is formed in the upper lid 41 between the outer wall 42 and the inner wall 48. The inert gas is exhausted through the gap between the middle wall 48 and the substrate 16 to the gas suction port or through the outer wall 42 to be discharged around the local gas intake / exhaust mechanism 4. By providing the gas outlet 49, the effect of preventing the intake of outside air and the leakage of the raw material gas to the surroundings are improved. It is desirable to arrange the gas inlet 44 and the gas outlet 49 so as to be symmetrical with respect to the central axis of the quartz tube 2. FIG. 19 shows the case where both the gas inlet port 44 and the gas outlet port 49 are even numbers. However, as shown in FIG. 20, the gas inlet port 44 and the gas outlet port 49 are odd numbers and their positions form a regular polygon. It may be arranged.

  FIG. 19B shows the gas intake / exhaust mechanism 4 viewed from the substrate 16 side. The bottom surface of the middle wall 48 and the inner wall 43 is a labyrinth structure 45. The outer wall 42 should not have a labyrinth structure in order to actively discharge the inert gas to the surroundings and prevent outside air from being taken in. According to the present embodiment, fluctuations in the amount of outside air taken in due to gap fluctuations can be reduced, and pressure fluctuations in the reaction chamber 52 can be reduced.

  In the case of using the local gas intake / exhaust mechanism 4 of the present embodiment in the local film forming apparatus of the above-described second embodiment, the pressure condition is memorized, the pressure is measured, the pressure measurement result is determined, etc. May be performed.

  Embodiment 4 of the present invention will be described below with reference to FIG. In the embodiment, the local film forming apparatus 20 for generating the microplasma 5 and reacting the raw material gas is described. However, an apparatus (for example, a laser CVD apparatus) for forming a film by locally controlling the gas flow or the substrate surface is described. It can also be applied to a processing apparatus.

FIG. 20 shows the structure of the local gas intake / exhaust mechanism 4 of the embodiment. FIG. 20 (a) in view of the cross section of the local gas intake and exhaust mechanism 4 from the side, the cross-sectional area of the reaction chamber 52 A, a gauge pressure in the reaction chamber 52 and P _a, the sectional area of the exhaust chamber 50 B, and a gauge pressure in the exhaust chamber 50 and _{P b,}

[Equation 1]
P _a A + P _b B> 0
If this is the case, no upward force acts on the substrate 16, so that the adsorption of the substrate 16 can be prevented.

When this embodiment is applied to the local gas exhaust mechanism 4 (embodiment 3) shown in FIG. 19, the sectional area of the space between the middle wall 48 and the outer wall 42 is C, and the gauge pressure of the space is P. _{If c} ,

[Equation 2]
P _a A + P _b B + P _c C> 0
If this is the case, no upward force acts on the substrate 16, so that the adsorption of the substrate 16 can be prevented.

  According to this embodiment, it is possible to prevent the substrate 16 from being adsorbed by the local gas intake / exhaust mechanism 4.

  The present invention can be used in a plasma generator or a laser CVD apparatus that needs to control the gas flow in a film formation region.

Explanatory drawing of the local film-forming apparatus of Example 1 of this invention Explanatory drawing of the local gas intake-exhaust mechanism of Example 1 of this invention Explanatory drawing of another local gas intake-exhaust mechanism of Example 1 of this invention Explanatory drawing of another local gas intake-exhaust mechanism of Example 1 of this invention Explanatory drawing of another local gas intake-exhaust mechanism of Example 1 of this invention Explanatory drawing of the labyrinth structure of Example 1 of this invention Explanatory diagram showing the relationship between gap and flow rate Explanatory drawing of another labyrinth structure of Example 1 of this invention Explanatory drawing of another labyrinth structure of Example 1 of this invention Explanatory drawing of another labyrinth structure of Example 1 of this invention Explanatory drawing of another labyrinth structure of Example 1 of this invention Explanatory drawing of another labyrinth structure of Example 1 of this invention Explanatory drawing of another local gas intake-exhaust mechanism of Example 1 of this invention Explanatory drawing of the local film-forming apparatus of Example 2 of this invention Explanatory drawing of the apparatus structure of Example 2 of this invention Explanatory drawing of another apparatus structure of Example 2 of this invention Explanatory drawing of the height adjustment procedure of Example 2 of this invention Explanatory drawing of the local film-forming apparatus of Example 3 of this invention Explanatory drawing of the local gas intake-exhaust mechanism of Example 3 of this invention Explanatory drawing of another local gas intake-exhaust mechanism of Example 3 of this invention Explanatory drawing of the local gas intake-exhaust mechanism of Example 4 of this invention

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Plasma production chamber, 2 ... Quartz tube, 3 ... Coil, 4 ... Local gas intake / exhaust mechanism, 5 ... Microplasma, 6 ... Nozzle, 7 ... High frequency power supply, 8 ... Matching box, 9 ... Igniter, 10 ... Source gas Container, 11 ... Plasma gas container, 12 ... Mass flow controller, 14 ... Gas exhaust pipe, 15 ... Suction valve, 16 ... Substrate, 17 ... Suction pump, 21 ... Head part, 41 ... Upper lid, 42 ... Outer wall, 43 ... Inner wall, 44 ... gas inlet, 45 ... labyrinth structure, 46 ... circular groove, 47 ... throttle piece, 48 ... inner wall, 49 ... gas outlet, 50 ... exhaust chamber, 51 ... buffer region, 52 ... reaction chamber, 61 ... spiral groove, 62 ... gear-like groove, 63 ... wavy groove, 64 ... rectangular groove, 100 ... storage section, 101 ... reaction condition storage means, 102 ... reaction position information storage means, 103 ... pressure condition storage hand , 104 ... Pressure measurement result judging means, 110 ... Plasma generator, 111 ... Electric power applying means, 112 ... Electric power control means, 113 ... Reactive gas flow rate control means, 114 ... Argon gas flow rate control means, 115 ... Suction pump operating means, DESCRIPTION OF SYMBOLS 120 ... XYZ stage, 121 ... Height measuring means, 122 ... Height adjusting means, 123 ... XY position measuring means, 124 ... XY position adjusting means

Claims (16)

In a film formation or surface treatment apparatus having a local gas intake / exhaust mechanism,
The local gas intake and exhaust mechanism is
An upper wall, an inner wall surrounding the center of the upper lid provided in the direction of the substrate on which film formation or surface treatment is performed from the bottom surface of the upper lid, and the inner wall provided in the direction of the substrate from the bottom surface of the upper lid And an outer wall surrounding the
Introducing gas into the first space inside the inner wall and exhausting gas from the second space between the inner wall and the outer wall,
At least one of the inner wall or the open-side surface of the outer wall has a labyrinth structure. In a film formation or surface treatment apparatus having a local gas intake / exhaust mechanism,
The local gas intake and exhaust mechanism is
An upper wall, an inner wall surrounding the center of the upper lid provided in the direction of the substrate on which film formation or surface treatment is performed from the bottom surface of the upper lid, and the inner wall provided in the direction of the substrate from the bottom surface of the upper lid And an outer wall surrounding the inner wall provided in the direction of the substrate from the bottom surface of the upper lid,
Gas is introduced into the first space inside the inner wall, the gas is exhausted from the second space between the inner wall and the inner wall, and the gas is discharged into the third space between the inner wall and the outer wall. The structure to introduce,
At least one of the open side surfaces of the inner wall, the inner wall, or the outer wall has a labyrinth structure. In the film-forming or surface treatment apparatus according to claim 1 or 2,
A measurement unit that measures the pressure in the first space for introducing gas and a height adjustment unit that adjusts a gap between the local gas intake / exhaust mechanism and the substrate based on the measured value of the pressure are provided. A film forming or surface treatment apparatus. In the film-forming or surface treatment apparatus according to claim 1 or 2,
A pressure measurement unit that measures the pressure of the space into which the gas is introduced, a pressure condition storage unit, a pressure measurement result determination unit, a reaction condition storage unit, a reaction position information storage unit, a power application unit, and a power control unit, A reaction gas flow rate control unit, an argon gas flow rate control unit, a suction pump operation unit, a height measurement unit, a height adjustment unit, an XY position measurement unit, and an XY position adjustment unit. Deposition or surface treatment equipment. In the film-forming or surface treatment apparatus of Claim 1,
The sum of the product of the cross-sectional area of the first space and the gauge pressure in the first space, and the product of the cross-sectional area of the second space and the gauge pressure of the second space is greater than zero. A film formation or surface treatment apparatus characterized by the above. In the film-forming or surface treatment apparatus according to claim 2,
The product of the cross-sectional area of the first space and the gauge pressure in the first space; the product of the cross-sectional area of the second space and the gauge pressure in the second space; A film formation or surface treatment apparatus, wherein a sum of products of a sectional area of a space and a gauge pressure in the third space is larger than zero. In the film-forming or surface treatment apparatus of Claim 1,
The film forming or surface treatment apparatus characterized in that the inner wall and the outer wall have a uniform thickness. In the film-forming or surface treatment apparatus according to claim 2,
The film forming or surface treatment apparatus characterized in that the inner wall, the inner wall, and the outer wall have a uniform thickness. In the film-forming or surface treatment apparatus of Claim 1,
Gas inlets for exhausting gas from the second space are at the same distance from the center of the gas inlet for introducing gas into the first space, and are equally disposed in the circumferential direction. A film forming or surface treatment apparatus characterized by the above. In the film-forming or surface treatment apparatus according to claim 2,
A gas inlet for exhausting gas from the second space and a gas inlet for introducing gas into the third space are the centers of the gas inlets for introducing gas into the first space. And a gas inlet for exhausting gas from the second space and a gas inlet for introducing gas into the first space, which are equally spaced from each other in the circumferential direction. A distance between the gas introduction port for introducing the gas into the third space and the gas introduction port for introducing the gas into the first space. Or surface treatment equipment. In the film-forming or surface treatment apparatus of Claim 1,
A film forming or surface treatment apparatus characterized in that a height of the inner wall is larger than a height of the outer wall. In the film-forming or surface treatment apparatus according to claim 2,
The film forming or surface treatment apparatus characterized in that the height of the inner wall is larger than the height of either the inner wall or the outer wall. In the film-forming or surface treatment apparatus according to claim 1 or 2,
A film forming or surface treatment apparatus characterized in that a material of the local gas intake / exhaust mechanism is metal, ceramic, or quartz. In the film-forming or surface treatment apparatus according to claim 1 or 2,
A plurality of gas suction ports for exhausting gas from the second space are formed, and each of the gas suction ports is connected to the same suction valve by a pipe, and the conductances of the pipes are all equal. A film forming or surface treatment apparatus.   The film formation or surface treatment apparatus according to claim 1 or 2, wherein a buffer region is formed between a gas suction port for exhausting gas from the second space and the second space, and the buffer region. Is a film-forming or surface-treating apparatus characterized by having a volume larger than that of the second space. A film formation or surface treatment method using the film formation or surface treatment apparatus according to claim 1,
A first step of lowering the local gas intake / exhaust mechanism to a predetermined position;
A second step of operating a gas suction pump for exhausting the gas;
Substituting the outside air in the first space with a gas;
Measuring the pressure in the first space;
Adjusting the height of the local gas intake and exhaust mechanism so that the pressure becomes a predetermined pressure;
A film forming or surface treatment method comprising:

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