JP2010047780A - Vacuum treatment apparatus and vacuum treatment method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a vacuum treatment apparatus wherein the distribution of gas pressure (concentration) in a treatment space is controlled with a simple structure, and to provide a vacuum treatment method. <P>SOLUTION: The vacuum treatment apparatus includes a vacuum container 1 which can maintain a reduced-pressure atmosphere and has a treatment space where a treatment to a material 3 to be treated is carried out in a reduced pressure atmosphere, and a gas introduction passage 4 which penetrates the wall 1a of the vacuum container 1 and leads to the treatment space 10. The blowing-out direction of a gas blown into the treatment space 10 from the gas introduction passage 4 is in parallel or inclined with respect to the inner wall surface in the vicinity of a part, where the gas introduction passage 4 is provided, of the vacuum container 1. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a vacuum processing apparatus and a vacuum processing method for performing processing such as film formation, etching, ashing, and surface modification on an object to be processed in a reduced pressure atmosphere.

2. Description of the Related Art Conventionally, a structure in which a plurality of gas introduction holes are provided around or in the upper part of a processing chamber in a vacuum processing apparatus, and various gases such as a discharge gas and a reaction gas are introduced into the processing chamber from the plurality of gas introduction holes. (For example, refer to Patent Document 1).
JP 2004-172622 A

  In the above structure, the gas introduction holes are arranged so as to introduce the gas evenly into the processing chamber. However, the gas introduction holes are formed so as to extend in a direction perpendicular to the wall surface of the processing chamber, and the gas blown out from each gas introduction hole into the processing chamber forms a flow mainly proceeding toward the center of the processing chamber. In such a gas introduction method, the gas pressure (concentration) distribution in the central portion of the processing chamber becomes high, and depending on the shape of the processing chamber, for example, it may be difficult to reach the gas near the corner or the wall surface. In addition, this causes non-uniform processing on the object to be processed.

  Furthermore, for example, when the target object to be sputter-deposited is a donut-shaped disk-shaped recording medium, no film is formed in the central hole and its peripheral part, so a gas is introduced near the center of the processing chamber. The generation of plasma in that part is an inefficient process in terms of gas utilization efficiency and power utilization efficiency.

  The present invention has been made in view of the above problems, and provides a vacuum processing apparatus and a vacuum processing method capable of controlling a gas pressure (concentration) distribution in a processing space with a simple structure.

According to one aspect of the present invention, a vacuum chamber capable of maintaining a reduced-pressure atmosphere, and having a processing space in which processing is performed on an object to be processed in the reduced-pressure atmosphere, and a wall portion of the vacuum chamber are provided. A gas introduction path that passes through and leads to the processing space, and a gas blowing direction from the gas introduction path into the processing space is in the vicinity of a portion where the gas introduction path is provided. A vacuum processing apparatus is provided that is parallel or inclined with respect to the inner wall surface of the vacuum chamber.
According to another aspect of the present invention, the processing object is accommodated in a processing space inside the vacuum chamber, and the processing is performed from a gas introduction path that penetrates the wall of the vacuum chamber and communicates with the processing space. A vacuum processing method for introducing a gas into a space to process the object to be processed, wherein the gas introduction path is parallel to an inner wall surface of the vacuum chamber near a portion where the gas introduction path is provided. Alternatively, a vacuum processing method is provided in which gas is blown out in an inclined direction.

  ADVANTAGE OF THE INVENTION According to this invention, the vacuum processing apparatus and vacuum processing method which can control the gas pressure (concentration) distribution in processing space with a simple structure are provided.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

[First Embodiment]
FIG. 1 is a schematic diagram showing a schematic configuration of a vacuum processing apparatus according to the first embodiment of the present invention.

  In the present embodiment, a sputtering film forming apparatus in which the target 2 and the object to be processed 3 are disposed opposite to each other in the vacuum chamber 1 and the target material is formed by sputtering on the object to be processed 3 is given as an example of the vacuum processing apparatus. I will explain.

  The target 2 is held on the upper wall of the vacuum chamber 1 via a backing plate or the like. The object to be processed 3 is, for example, a donut-shaped disk-shaped recording medium, and is supported by a susceptor described below so as to face the target 2.

  FIG. 2 shows an example of a support mechanism for the workpiece 3. The object to be processed 3 is supported by a susceptor 6 that can be moved up and down in the vacuum chamber 1. The inside of the vacuum chamber 1 is roughly divided into a processing space 10 and a transfer space 20. Both the processing space 10 and the transfer space 20 are evacuated to a reduced pressure atmosphere through an exhaust port (not shown).

  A protrusion 7 is provided at the center of the susceptor 6, and the circular center hole of the disc-shaped recording medium as the object to be processed 3 is fitted into the protrusion 7, and the object to be processed 3 is centered on the susceptor 6. Is supported almost horizontally.

  While the workpiece 3 is being transferred, the workpiece 3 is not positioned at the bottom of the processing space 10, and the bottom of the processing space 10 is open to the transfer space 20. A lifting rod 8 is coupled to the susceptor 6, and when the susceptor 6 is raised toward the processing space 10 by driving the rod 8, the workpiece 3 is set at the processing position shown in FIG. 2.

  In this processing position, the target object 3 closes the bottom of the processing space 10, and the film formation surface of the target object 3 faces the processing space 10 while facing the target 2. Further, the inner peripheral side tip portion of the outer mask 9 provided in an annular shape around the bottom of the processing space 10 covers the outermost peripheral edge portion of the workpiece 3. During sputtering film formation, the gas introduced into the processing space 10 through the gas introduction path 4 can be exhausted through the exhaust hole 11 formed in the outer mask 9 to the transport space 20 and further to an exhaust port (not shown). It has become.

  As shown in FIGS. 1 and 2, a plurality of gas introduction paths 4 are formed in the wall 1 a of the vacuum chamber 1 surrounding the processing space 10. The gas introduction path 4 is formed as a through hole that penetrates the wall portion 1 a of the vacuum chamber 1 and communicates with the processing space 10. The gas introduction path 4 is connected to a gas supply source via a gas introduction pipe (not shown).

FIG. 3 is a schematic cross-sectional view corresponding to the AA cross section in FIG. 2.
FIG. 4 shows an enlarged view of the gas introduction path forming portion in FIG.
As shown in FIG. 1, a plurality of gas introduction paths 4 are formed so as to surround the processing space 10, but in FIG. 3, for example, only four gas introduction paths 4 positioned at intervals of about 90 degrees are provided. It is shown.

  The gas introduction path 4 is formed as a through hole that is inclined with respect to the inner wall surface of the vacuum chamber 1 and penetrates the wall portion 1a. 4 shows a cross section of the wall portion 1a of the vacuum chamber 1, and in the specific example shown in FIG. 4, the flow passage wall surface 4a constituting the side wall of the gas introduction passage 4 is a portion where the gas introduction passage 4 is provided. It is inclined with respect to the nearby inner wall surface 1b.

  In FIG. 3, if a straight line connecting the center of the inlet 12 of the gas introduction path 4 to the wall 1a and the center C of the processing space 10 is a, the center of the outlet 13 of the gas introduction path 4 is on the straight line a. It is located with respect to the straight line a.

  In FIG. 3, the gas blowing direction from each gas introduction path 4 into the processing space 10 is indicated by a white arrow b. As shown by a thick black arrow in FIG. 4, the gas blown out from the gas introduction path 4 into the processing space 10 has various directional components, but in this embodiment, the channel wall surface 4 a of the gas introduction path 4 is inclined. Therefore, the amount of gas traveling in the direction b along the inclination direction is the largest. The direction b is referred to as “gas blowing direction” in this specification.

  As shown in FIG. 3, in this embodiment, the gas blowing direction b of all the gas introduction paths 4 is inclined with respect to the inner wall surface of the vacuum chamber 1 near the portion where each gas introduction path 4 is provided.

  In the sputter deposition apparatus according to this embodiment configured as described above, the sputtering gas is introduced into the processing space 10 through the gas introduction path 4 before the object 3 is moved to the processing position shown in FIG. (For example, argon gas) is introduced.

  And after setting the to-be-processed object 3 to the said process position, a voltage is applied to the target 2 from the power supply which is not shown in figure. By applying this voltage, a discharge is generated with the target 2 as the cathode and the inner wall of the vacuum chamber 1 as the anode, and the introduced sputtering gas is ionized to generate plasma in the processing space 10 and accelerated by, for example, argon ions The target 2 is sputtered. The sputtered (struck out) constituent atoms of the target 2 are deposited and deposited on the film formation surface of the object 3 to be processed, and a film of the target material is formed on the film formation surface. When the film forming process is completed, the rod 8 is lowered, and the object 3 is transferred to the transfer space 20.

  Here, FIG.17 and FIG.18 shows the structure of a comparative example. FIG. 17 is a diagram corresponding to FIG. 4 of the present embodiment described above, and FIG. 18 is a diagram corresponding to FIG. 3 of the present embodiment.

  Also in the configuration of this comparative example, the gas introduction path 51 is formed as a through hole penetrating the wall portion 1 a of the vacuum chamber 1, but the flow path wall surface 51 a of the gas introduction path 51 is the inner wall surface of the vacuum chamber 1. It is perpendicular to. For this reason, out of the gas flowing out from the gas introduction path 51 into the processing space 10, the amount of gas flowing out in the direction b along the flow path wall surface 51a (the amount of gas flowing out in the direction perpendicular to the inner wall surface of the vacuum chamber 1). ) Is relatively large. In FIG. 17, the outflow direction of the gas flowing out from the gas introduction path 51 into the processing space 10 is indicated by a thick black arrow, and the longer the length of the arrow, the larger the gas flow rate.

  As a result, the gas flowing out from each gas introduction path 51 into the processing space 10 mainly flows toward the center of the processing space 10 as indicated by a white arrow b in FIG. They collide with each other in the vicinity and diffuse into the processing space 10. In such a gas introduction method, the gas pressure (concentration) distribution in the central portion of the processing space 10 becomes high, and it is difficult to intentionally form a desired gas pressure (concentration) distribution in the processing space 10. In particular, this leads to non-uniform processing on the object to be processed.

  Further, for example, in the case where the object to be processed 3 is a donut-shaped disk-shaped recording medium, no film is formed in the central hole and its peripheral part, so that gas is introduced near the center of the processing space 10 In addition, generating plasma is an inefficient process in terms of gas utilization efficiency and power utilization efficiency.

  On the other hand, in this embodiment, as described above with reference to FIGS. 3 and 4, the flow path wall surface 4 a of the gas introduction path 4 formed through the wall portion 1 a of the vacuum chamber 1 is the vacuum chamber 1. Of the gas flowing out from the gas introduction path 4 into the processing space 10, the amount of gas flowing out in the direction along the inclined channel wall surface 4 a (gas blowing direction b) is relatively Increase in number. In FIG. 4, the outflow direction of the gas flowing out from the gas introduction path 4 into the processing space 10 is indicated by a thick black arrow, and the longer the length of the arrow, the larger the gas flow rate. That is, the amount of gas traveling in the direction perpendicular to the inner wall surface 1b of the vacuum chamber 1 near the portion where each gas introduction path 4 is formed or the center C of the processing space 10 is relatively reduced, and the inner wall surface of the vacuum chamber 1 is reduced. The amount of gas forming the flow along 1b is relatively increased.

  For example, the gas blowing direction b of the gas introduction path 4 at the lowest position on the paper surface of FIG. 3 is inclined to the right with respect to the straight line a, and the gas blowing direction b of the gas introduction path 4 at the uppermost position is The gas blowing direction b of the gas introduction path 4 which is inclined to the left side with respect to the straight line a and which is at the rightmost position is inclined upward with respect to the straight line a and is the gas introduction path 4 which is at the leftmost position. The gas blowing direction b is inclined downward with respect to the straight line a, and the gas blown out from each gas introduction path 4 is not concentrated at the same point in the processing space 10, and is the direction indicated by the dotted arrow in FIG. A gentle gas flow is possible in the counterclockwise direction.

  As a result, the gas pressure (concentration) in the vicinity of the center C in the processing space 10 is relatively low, and the gas pressure (concentration) in the outer portion is relatively high. ) A distribution is formed. Therefore, when the disk-shaped recording medium is the object 3 to be processed, an efficient sputter film forming process can be performed while suppressing the gas supply to the central part where no film formation is required.

  Moreover, since the gas blown out from each gas introduction path 4 does not concentrate on the same one point in the processing space 10, the collision of the gas in the processing space 10 can be suppressed as much as possible. Since the collision of gas can be suppressed, it is difficult to form a flow that is difficult to predict in the processing space 10, and an intended gas pressure (concentration) distribution is easily formed. That is, the controllability of the gas pressure (concentration) distribution is improved.

  In this embodiment, it is only necessary to make a simple structural change in which the flow channel wall surface 4a of the gas introduction channel 4 is inclined with respect to the inner wall surface of the vacuum chamber 1, and the gas blowing direction b is set by appropriately setting the inclination angle. By adjusting the, the gas pressure (concentration) distribution can be finely controlled according to the shape, material, target material, gas type, processing content, and specifications required for the processed product. This makes it possible to improve processing quality and processing efficiency.

  It is not necessary to make the inclination angle of the flow passage wall surface 4a the same for all the gas introduction passages 4, and by setting the inclination angle appropriately, it is not limited to the donut-shaped gas pressure (concentration) distribution described above, The gas pressure (concentration) distribution can be controlled arbitrarily.

  In addition, when the reactive sputtering film forming process is performed in which the reactive gas is introduced into the processing space 10 to form a reaction product of the target material and the reactive gas, the gas having a structure in which the channel wall surface is inclined as described above. By introducing the reactive gas into the processing space 10 through the introduction path, a desired pressure (concentration) distribution of the reactive gas can be formed in the processing space 10, and the reaction process can be controlled accordingly. It becomes possible.

  In the embodiment described above, both of the opposing portions of the side wall of the gas introduction path 4 are inclined. However, only one flow path wall surface 16a is inclined as in the gas introduction path 16 shown in FIG. Also good.

  Moreover, it is good also as a gas introduction path 15 as shown in FIG.5 (b). The gas introduction path 15 has a through-hole portion 17 that penetrates the vacuum chamber wall 1a and a projection 18 that projects into the processing space 10 from the inner wall surface 1b of the vacuum chamber wall 1a. In this gas introduction path 15, the flow passage wall surface of the through-hole portion 17 is perpendicular to the inner wall surface 1b of the wall portion 1a, but the flow passage wall surface of the protruding portion 18 is inclined with respect to the inner wall surface 1b of the wall portion 1a. Therefore, it is possible to relatively increase the amount of gas blown out in the direction b along the inclination direction.

  The flow passage wall surface of the gas introduction path is not limited to being inclined with respect to the vacuum chamber wall 1a, and as shown in FIG. 5C, the flow channel wall near the outlet is connected to the inner wall surface 1b of the vacuum chamber wall 1a. Alternatively, a gas introduction path 19 having a parallel structure may be used. The gas introduction path 19 includes a through-hole portion 21 that penetrates the wall portion 1 a and a protruding portion 22 that protrudes into the processing space 10. The protrusion 22 is bent or curved substantially at a right angle, and the flow path wall surface near the outlet thereof is parallel to the inner wall surface 1b of the wall 1a. Therefore, it is possible to relatively increase the amount of gas blown in the direction b parallel to the inner wall surface 1b, and it is easy to form a gas flow along the inner wall surface 1b, and the outer peripheral side in the processing space 10 It is easy to form a partial gas pressure (concentration) distribution.

  The number of objects to be processed is not limited to one in the processing space 10, and a plurality of objects to be processed 23 may be arranged around the center of the processing space 10, as shown in FIG. In this case, the formation of the above-described donut-shaped gas pressure (concentration) distribution is effective in performing efficient processing.

  In the above-described embodiment, the vacuum chamber wall portion surrounding the processing space 10 is exemplified by a cylindrical shape, but may be a square tube-shaped vacuum chamber wall portion 25 as shown in FIGS. 7 and 8. In this case, since the channel wall surface of the gas introduction path 4 is inclined with respect to the inner wall surface of the vacuum chamber wall 25, the gas blowing direction b shown in FIG. 8 can be realized, and the corners (four corners) of the processing space 10 can be realized. It becomes easy to form the gas flow toward In this embodiment, in particular, for example, when processing is performed on a large display substrate or a solar cell substrate, it is possible to perform processing evenly on the four corners of the substrate.

  In addition, the vacuum chamber may have a pentagonal or higher polygonal shape or a dome shape.

  In the gas introduction path, the channel wall surface inclined with respect to the inner wall surface of the vacuum chamber is not limited to the portion constituting the side wall, and the channel wall surface constituting the upper wall or the lower wall may be inclined with respect to the inner wall surface of the vacuum chamber. . FIG. 9 shows a longitudinal section of the wall 1 a of the vacuum chamber 1.

  For example, FIG. 9A shows a form in which the upper wall 26 a and the lower wall 26 b of the gas introduction path 26 are inclined downward toward the processing space 10, and FIG. 9B shows the upper part of the gas introduction path 27. The form which inclined the wall 27a and the lower wall 27b upward toward the process space 10 side is shown. In the case of the gas introduction path 26 of FIG. 9A, the amount of gas blown downward b can be relatively increased, and in the case of the gas introduction path 27 of FIG. 9B, the amount of gas blown upward is relatively increased. You can do more.

  Of course, even if a gas introduction path directed upward or downward in parallel to the inner wall surface of the vacuum chamber is formed by providing a protrusion extending parallel to the inner wall surface of the vacuum chamber as shown in FIG. Good.

[Second Embodiment]
Next, FIG. 10 is a schematic diagram showing a schematic configuration of a vacuum processing apparatus according to the second embodiment of the present invention. In the present embodiment, for example, a remote plasma type ashing apparatus will be described as an example.

  The inside of the vacuum chamber 31 can be depressurized by an exhaust system (not shown), and a support portion 33 that supports, for example, a semiconductor wafer as the object to be processed 32 is provided at the bottom thereof. The object 32 to be processed supported on the support part 33 has its surface to be treated facing the processing space 30.

In the vacuum chamber 31, a gas introduction path 36 is formed as a through hole in a wall portion 31 a surrounding the processing space 30, and the gas introduction path 36 is connected to a gas transport pipe 34 outside the vacuum chamber 31. . For example, oxygen gas (O ₂ gas) is supplied to the gas transport pipe 34, and a waveguide 35 capable of irradiating the oxygen gas with microwaves is provided.

  When the microwave is irradiated to the oxygen gas transported through the gas transport pipe 34, ozone, oxygen active species, and the like are generated, and these are transported together with the oxygen gas and introduced into the processing space 30 through the gas introduction path 36. Then, the resist film or the like formed on the semiconductor wafer which is the object to be processed 32 is ashed (ashed) and removed by the ozone and oxygen active species.

  Also in the apparatus of the present embodiment, the gas introduction path 36 is easily introduced into the processing space 30 by being inclined or parallel to the inner wall surface of the vacuum chamber wall 31a, as in the above-described embodiment. The concentration distribution of ozone and oxygen active species can be controlled. As a result, processing quality and processing efficiency can be improved.

  In the above-described embodiment, the gas introduction path is provided in the side wall portion surrounding the processing space in the vacuum chamber, and the flow wall surface of the gas introduction path is inclined with respect to the side wall surface of the vacuum chamber. As in a third embodiment described below, a gas introduction path may be provided in the upper part of the vacuum chamber, and the flow wall surface of the gas introduction path may be inclined with respect to the upper wall surface of the vacuum chamber.

[Third Embodiment]
FIG. 11A is a schematic diagram showing a schematic configuration of a vacuum processing apparatus according to the third embodiment of the present invention. In the present embodiment, a CVD apparatus that performs film formation by a CVD (chemical vapor deposition) method by introducing a source gas using a shower plate, for example, will be described as an example.

  The inside of the vacuum chamber 41 can be depressurized by an exhaust system (not shown), and a support portion 43 that supports, for example, a semiconductor wafer as the object to be processed 42 is provided at the bottom thereof. A gas introduction head 47 is provided on the upper wall of the vacuum chamber 41.

  The gas introduction head 47 includes an inlet 46 of a gas (discharge gas or source gas) supplied from the outside of the vacuum chamber 41, a buffer chamber 45 formed in communication with the inlet 46, And a shower plate 44 provided below. The object to be processed 42 supported on the support portion 43 faces the processing space 40 so as to face the shower plate 44.

  FIG. 11B is a schematic plan view of the shower plate 44 as viewed from the upper surface on the buffer chamber 45 side. The shower plate 44 is formed in a disk shape, for example, and a plurality of gas introduction paths 48 are formed as through holes penetrating in the thickness direction.

  A source gas containing an element to be formed into a film is introduced from the gas introduction path 48 into the processing space 40, and a voltage is applied to the counter electrode using the gas introduction head 47 as the upper electrode and the support portion 43 as the lower electrode. Plasma is generated in 40, and this energy causes chemical reaction such as decomposition, reduction, oxidation, and substitution of the raw material gas on the surface of the object to be processed 42, and a film is formed on the surface of the object to be processed 42.

  In this embodiment, the flow wall surface of the gas introduction path 48 formed on the outer peripheral side of the shower plate 44 is not perpendicular to the upper wall surface of the vacuum chamber 41 but is inclined. That is, the position of the outlet 48b is not directly below the inlet 48a of the gas introduction path 48 and is shifted in the horizontal plane direction. For example, with respect to the inlet 48 a formed on the outer peripheral side on the upper surface of the shower plate 44, the outlet 48 b is positioned so as to be shifted counterclockwise and radially inward in FIG.

  With such a configuration, the gas blown out from the gas introduction path 48 into the processing space 40 forms a flow that draws a spiral in the processing space 40.

  12 shows a modification of the structure of FIG. 11, FIG. 12 (a) corresponds to FIG. 11 (a), and FIG. 12 (b) corresponds to FIG. 11 (b).

  In the structure shown in FIG. 12, a gas introduction path 49 is also provided at the center of the shower plate 44. The gas introduction path 49 provided in the central portion extends straight down and the wall surface of the flow path is perpendicular to the upper wall surface of the vacuum chamber 41.

  With such a configuration, the gas is blown out from the gas introduction passage 49 in the central portion directly below, and the gas blown out from the gas introduction passage 48 on the outer peripheral side into the processing space 40 spirals in the processing space 40. Create a flow like drawing. Thereby, the gas concentration distribution in the circumferential direction and the radial direction on the surface of the object to be processed 42 can be made uniform, and an improvement in in-plane uniformity of the film thickness formed on the object to be processed 42 can be expected.

[Fourth Embodiment]
Next, FIG. 13 is a schematic view showing a vacuum chamber 54 in a vacuum processing apparatus according to the fourth embodiment of the present invention. As shown in FIG. 13A, the vacuum chamber 54 includes, for example, four wall portions 54a to 54d.

  13A shows a schematic top view of the vacuum chamber 54, FIG. 13B shows a schematic cross-sectional view seen from the direction of arrow A in FIG. 13A, and FIG. 13C shows FIG. ) Shows a schematic cross-sectional view seen from the direction of arrow B in FIG.

  As shown in FIG. 13 (b), the wall 54a and the wall 54c face each other substantially in parallel, and the gas introduction path formed in the wall 54a is located above the gas introduction path formed in the wall 54c. positioned. Similarly, as shown in FIG. 13C, the wall portion 54b and the wall portion 54d face each other substantially in parallel, and the gas introduction path formed in the wall portion 54b is a gas introduction path formed in the wall portion 54d. It is located higher.

As shown in FIG. 13A, a gas introduction path is formed in the wall 54a in the vicinity of the corner with the wall 54b, and the gas blowing direction a from the gas introduction path is relative to the wall 54b. It is substantially parallel and inclined downward as shown in FIG.
As shown in FIG. 13A, a gas introduction path is formed in the wall 54b near the corner with the wall 54c, and the gas blowing direction b from the gas introduction path is in relation to the wall 54c. It is substantially parallel and is inclined downward as shown in FIG.
As shown in FIG. 13A, a gas introduction path is formed in the wall 54c near the corner with the wall 54d, and the gas blowing direction c from the gas introduction path is in relation to the wall 54d. It is substantially parallel and inclined downward as shown in FIG.
As shown in FIG. 13A, a gas introduction path is formed in the wall portion 54d in the vicinity of the corner with the wall portion 54a, and the gas blowing direction d from the gas introduction path is relative to the wall portion 54a. It is substantially parallel and is inclined downward as shown in FIG.

  With such a configuration, it is possible to form a spiral gas flow in the processing space 10 also in the present embodiment. Note that the “spiral gas flow” in this specification is not a spontaneously generated vortex generated locally, but a gas blowing direction as exemplified in the third and fourth embodiments described above. The vortex intentionally generated in the entire processing space 10 by the setting of

[Fifth Embodiment]
Next, FIG. 14 is a schematic diagram showing a schematic configuration of a vacuum processing apparatus according to the fifth embodiment of the present invention.

  In the present embodiment, for example, a wall portion having the gas introduction path 4 formed as a through hole is divided into a plurality of blocks 53, and each block 53 is detachable from the vacuum chamber 1. If the gas blowing direction of the gas introduction path 4 is different for each block 53, the mounting position of each block 53 is changed as appropriate, or the block 53 is not mounted in a certain part (the gas introduction path 4 is formed). In other words, it is possible to change the gas flow (concentration) distribution in the processing space 10 by changing the flow of gas formed in the entire processing space 10.

[Sixth Embodiment]
Next, FIG. 15 is a schematic view showing a gas introduction path in a vacuum processing apparatus according to the sixth embodiment of the present invention.

  As shown in FIG. 15A, the gas introduction path 61 in the present embodiment has an inclined portion 61b that protrudes into the processing space 10 and is inclined with respect to the vacuum chamber inner wall surface 1b. Further, outside the vacuum chamber wall 1a, the gas introduction path 61 is coupled to a rotation drive mechanism 62 and is rotatable around its central axis c.

  Further, the gas introduction path 61 is coupled to the gas introduction pipe 63 outside the vacuum chamber. An enlarged view of that portion is shown in FIG.

  A through hole 61a is formed in the peripheral surface of a portion of the gas introduction path 61 located outside the vacuum chamber 1, and a gas introduction pipe 63 is coupled to this portion. The through hole 61a communicates with the inside of the gas introduction pipe 63, whereby gas can be introduced into the gas introduction path 61 through the through hole 61a.

  In addition, a pair of seal rings 64 and 65 are mounted on the outer peripheral surface of the gas introduction path 61 so as to sandwich a portion where the through hole 61a is formed. The seal rings 64 and 65 are held in the gas introduction pipe 63, the inner peripheral surface thereof is in contact with the outer peripheral surface of the gas introduction path 61, and gas leaks outside the region sandwiched between the seal rings 64 and 65. It is prevented. The gas introduction path 61 is rotatable while sliding with respect to the seal rings 64 and 65.

  By rotating the gas introduction path 61 around the central axis c, the inclination angle of the inclined portion 61b can be changed as shown by the solid line and the dotted line in FIG. Thus, for example, in the inclined portion 61b indicated by the solid line, the gas blowing direction a is set obliquely downward in the drawing, and in the inclined portion 61b indicated by the dotted line, the gas blowing direction b is set diagonally upward in the drawing.

[Seventh Embodiment]
Next, FIG. 16A is a schematic view of a gas introduction path in a vacuum processing apparatus according to the seventh embodiment of the present invention.

  In the gas introduction path 70 according to the present embodiment, a plurality of gas outlets 71 are formed on the tip side facing the processing space. The plurality of gas outlets 71 are formed on the surface surrounding the periphery of the substantially cylindrical gas introduction path 70 around the central axis c. Accordingly, gas is blown out radially from each gas outlet 71 around the central axis c.

  Furthermore, in the present embodiment, a ring-shaped rotation mask 73 is provided so as to face the surface on which the plurality of blowout ports 71 are formed. The rotary mask 73 is selectively formed with one or more openings 73a in the circumferential direction. The rotary mask 73 is rotatable around the central axis c, and the circumferential position of the opening 73a can be changed.

  Gas blows out into the processing space only from the gas outlet 71 exposed at the opening 73a of the rotary mask 73. Therefore, the gas blowing direction can be changed (selected) by rotating the rotary mask 73 and changing the circumferential position of the opening 73a.

  Moreover, you may use the gas introduction path 80 as shown in FIG.16 (b). In this gas introduction path 80, an opening 82 is formed in the tip surface 81 of the funnel-shaped part. Although an example in which one opening 82 is formed is shown in the drawing, a plurality of openings may be formed.

  The opening 82 is formed at a position eccentric with respect to the center line c passing through the center of the circular tip surface 81, and the entire gas introduction path 80 or only the tip surface 81 is rotatable around the center line c. . If the internal flow path leading to the opening 82 is formed so as to be inclined rather than parallel to the center line c, the gas blowing direction from the opening 82 changes when the opening 82 rotates around the center line c.

  In the sixth and seventh embodiments shown in FIGS. 15 and 16, respectively, the gas blowing direction can be temporally changed during processing by rotating the gas introduction path and the rotary mask. .

  By changing the gas blowing direction from the gas introduction path with time during processing, it becomes possible to control the inside of the processing space to an appropriate gas pressure (concentration) distribution according to the change over time of the processing, Improvement in processing quality and processing efficiency can be expected. Moreover, the gas pressure (concentration) distribution in the processing space is temporally changed by changing the gas flow rate blown out from the gas introduction path with time, or by changing both the gas blowing direction and the gas blowing flow rate with time. You may perform control to change to.

  In particular, in sputter deposition, changing the gas pressure (concentration) distribution according to the change with time (erosion shape change) of the target is effective for enabling uniform processing and effective use of the target throughout the target life. It is.

  The embodiments of the present invention have been described above with reference to specific examples. However, the present invention is not limited to them, and various modifications can be made based on the technical idea of the present invention.

The present invention is not limited to a disk-shaped recording medium or a semiconductor wafer as an object to be processed, but can also be applied to a thin display substrate, a semiconductor pattern forming mask, an automobile mirror, a mobile phone case, and the like.
In addition, the present invention requires the introduction of gas into the processing space, such as sputter deposition, sputter etching, sputter cleaning, plasma polymerization, CDE (Chemical Dry Etching), CVD (chemical vapor deposition), ashing, and surface modification. It can be applied to all processes.
Moreover, what is introduced into the processing space through the gas introduction path is not limited to neutral atoms and molecules, but may include charged particles such as ions and electrons, neutral active species, and the like.

The schematic diagram which shows schematic structure of the vacuum processing apparatus which concerns on the 1st Embodiment of this invention. The schematic diagram which shows an example of the support mechanism of the to-be-processed object in the apparatus. The schematic cross section corresponding to the AA cross section in FIG. The enlarged view of the gas introduction path formation part in FIG. The schematic diagram which shows the modification of the gas introduction path in this invention. The schematic diagram which shows the modification of arrangement | positioning of the to-be-processed object in this invention. The schematic diagram which shows the modification of the vacuum vessel shape in this invention. The schematic diagram which shows the cross-sectional shape of the vacuum chamber shown in FIG. The schematic diagram which shows the specific example which inclined the flow-path wall surface which comprises the upper wall and lower wall of the gas introduction path in this invention. The schematic diagram which shows schematic structure of the vacuum processing apparatus which concerns on the 2nd Embodiment of this invention. (A) is a schematic diagram which shows schematic structure of the vacuum processing apparatus which concerns on the 3rd Embodiment of this invention, (b) is a schematic plan view of the shower plate in the same apparatus. The schematic diagram which shows the modification of the structure shown in FIG. The schematic diagram which shows the vacuum chamber in the vacuum processing apparatus which concerns on the 4th Embodiment of this invention. The schematic diagram which shows schematic structure of the vacuum processing apparatus which concerns on the 5th Embodiment of this invention. The schematic diagram which shows the gas introduction path in the vacuum processing apparatus which concerns on the 6th Embodiment of this invention. The schematic diagram of the gas introduction path in the vacuum processing apparatus which concerns on the 7th Embodiment of this invention. The expanded sectional view of the gas introduction path of a comparative example. The cross-sectional view of the gas introduction path formation part in the vacuum chamber of a comparative example.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Vacuum chamber, 1a ... Wall part of vacuum chamber, 2 ... Target, 3 ... To-be-processed object, 4 ... Gas introduction path, 10 ... Processing space, 12 ... Inlet of gas introduction path, 13 ... Outlet of gas introduction path

Claims (8)

A vacuum chamber capable of maintaining a reduced-pressure atmosphere, and having a processing space in which processing is performed on the object to be processed in the reduced-pressure atmosphere;
A gas introduction path that passes through the wall of the vacuum chamber and communicates with the processing space;
A vacuum processing apparatus comprising:
A vacuum processing apparatus, wherein a gas blowing direction from the gas introduction path into the processing space is parallel or inclined with respect to an inner wall surface of the vacuum chamber near a portion where the gas introduction path is provided.   The vacuum processing apparatus according to claim 1, wherein a plurality of the gas introduction paths including those having different gas blowing directions are provided.   The vacuum processing apparatus according to claim 1, wherein the gas introduction path is provided so that the gas blowing direction can be changed. An object to be processed is accommodated in a processing space inside the vacuum chamber, and gas is introduced into the processing space from a gas introduction path that penetrates the wall of the vacuum chamber and communicates with the processing space. A vacuum processing method for performing processing,
A vacuum processing method, characterized in that gas is blown out from the gas introduction path in a direction parallel to or inclined with respect to the inner wall surface of the vacuum chamber in the vicinity of a portion where the gas introduction path is provided.   The vacuum processing method according to claim 4, wherein a gas is blown out from the gas introduction path into the processing space so that a spiral gas flow is formed in the processing space.   The vacuum processing method according to claim 4, wherein a gas blowing direction from the gas introduction path is temporally changed during the processing.   The vacuum processing method according to any one of claims 4 to 6, wherein a gas flow rate blown out of the gas introduction path is temporally changed during the processing.   The vacuum processing method according to claim 4, wherein the gas is introduced into the processing space by selectively using a plurality of gas introduction paths having different gas blowing directions.

Images