JP2010036152A5 - - Google Patents

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JP2010036152A5
JP2010036152A5 JP2008204375A JP2008204375A JP2010036152A5 JP 2010036152 A5 JP2010036152 A5 JP 2010036152A5 JP 2008204375 A JP2008204375 A JP 2008204375A JP 2008204375 A JP2008204375 A JP 2008204375A JP 2010036152 A5 JP2010036152 A5 JP 2010036152A5
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Prior art keywords
polar solvent
heating
substrate
heated
thin film
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JP2008204375A
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Japanese (ja)
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JP5764788B2 (en
JP2010036152A (en
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Priority to JP2008204375A priority Critical patent/JP5764788B2/en
Priority claimed from JP2008204375A external-priority patent/JP5764788B2/en
Priority to PCT/JP2009/063576 priority patent/WO2010016424A1/en
Publication of JP2010036152A publication Critical patent/JP2010036152A/en
Publication of JP2010036152A5 publication Critical patent/JP2010036152A5/ja
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Publication of JP5764788B2 publication Critical patent/JP5764788B2/en
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Claims (12)

チャンバーと、
前記チャンバー内に配置され、薄膜が形成された基板を保持する保持機構と、
極性溶媒のｐＨ調製するｐＨ調製機構と、
前記ｐＨ調製機構によってｐＨが調製された極性溶媒を加熱する加熱機構と、
前記加熱機構によって加熱された前記極性溶媒を前記保持機構に保持された前記基板に供給する供給機構と、
を具備し、
前記ｐＨが７超のアルカリ性に調製され且つ加熱された極性溶媒によって前記薄膜に酸化反応を起こさせることを特徴とする反応装置。 A chamber;
A holding mechanism arranged in the chamber and holding a substrate on which a thin film is formed;
A pH adjusting mechanism for adjusting the pH of the polar solvent;
A heating mechanism for heating the polar solvent having a pH adjusted by the pH adjusting mechanism;
A supply mechanism for supplying the polar solvent heated by the heating mechanism to the substrate held by the holding mechanism;
Comprising
A reaction apparatus characterized in that an oxidation reaction is caused to occur in the thin film by a polar solvent which is prepared to be alkaline with a pH of more than 7 and is heated. 請求項１において、前記ｐＨ調製機構によってｐＨが調製された極性溶媒を加圧する加圧機構をさらに具備し、前記ｐＨが調製され且つ加熱及び加圧された極性溶媒によって前記薄膜に酸化反応又は還元反応を起こさせることを特徴とする反応装置。   2. The pressure reducing mechanism according to claim 1, further comprising a pressurizing mechanism for pressurizing the polar solvent whose pH is adjusted by the pH adjusting mechanism, wherein the thin film is oxidized or reduced by the polar solvent whose pH is adjusted and heated and pressurized. A reaction apparatus characterized by causing a reaction. 請求項１又は２において、前記加熱機構によって前記極性溶媒を５００℃以下に加熱することを特徴とする反応装置。   3. The reaction apparatus according to claim 1, wherein the polar solvent is heated to 500 ° C. or less by the heating mechanism. 請求項２又は３において、前記加圧機構によって前記極性溶媒を５ｋｇ／ｃｍ２以上に加圧することを特徴とする反応装置。 4. The reaction apparatus according to claim 2, wherein the polar solvent is pressurized to 5 kg / cm 2 or more by the pressurizing mechanism. 請求項１乃至４のいずれか一項において、前記基板に供給された前記極性溶媒を前記チャンバーの外に導き、その導かれた前記極性溶媒を再び前記チャンバー内に導入して循環させる循環機構をさらに具備することを特徴とする反応装置。   5. The circulation mechanism according to claim 1, wherein the polar solvent supplied to the substrate is guided outside the chamber, and the guided polar solvent is again introduced into the chamber and circulated. Furthermore, the reaction apparatus characterized by the above-mentioned. 請求項２乃至５のいずれか一項において、前記基板に供給される前記極性溶媒が超臨界流体の状態であることを特徴とする反応装置。   6. The reaction apparatus according to claim 2, wherein the polar solvent supplied to the substrate is in a supercritical fluid state. ｐＨ７超のアルカリ性に調製され且つ加熱された極性溶媒を、基板上に形成された薄膜に供給することにより、前記薄膜に酸化反応を起こさせることを特徴とする反応方法。   A reaction method characterized by causing an oxidation reaction to occur in a thin film formed on a substrate by supplying a heated polar solvent having a pH of more than 7 and heated to a thin film formed on a substrate. 請求項７において、前記極性溶媒は、水蒸気又は５ｋｇ／ｃｍ２以上に加圧され且つ５００℃以下の水蒸気であることを特徴とする反応方法。 8. The reaction method according to claim 7, wherein the polar solvent is water vapor or water vapor pressurized to 5 kg / cm 2 or more and 500 ° C. or less. 請求項７において、前記極性溶媒は超臨界流体の状態であることを特徴とする反応方法。   8. The reaction method according to claim 7, wherein the polar solvent is in a supercritical fluid state. 請求項７乃至９のいずれか一項において、前記極性溶媒には超音波の疎密波が導入されていることを特徴とする反応方法。   10. The reaction method according to claim 7, wherein an ultrasonic dense wave is introduced into the polar solvent. 11. ２００ＭＰａの高圧下で使用可能なチャンバーと、
前記チャンバー内に配置され、酸化物薄膜の前駆体が形成された基板を保持する保持機構と、
前記基板を加熱する加熱機構と、
極性溶媒をｐＨ７超ｐＨ１４以下に調製するｐＨ調製機構と、
前記極性溶媒を加熱又は加圧する加熱加圧機構と、
前記加熱加圧機構によって加熱又は加圧された極性溶媒を、前記保持機構に保持され且つ前記加熱機構で加熱された前記基板に供給する供給機構と、
を具備し、
前記供給機構によって供給された前記極性溶媒によって前記酸化物薄膜の前駆体の結晶化を行うことを特徴とする反応装置。 A chamber usable under a high pressure of 200 MPa;
A holding mechanism arranged in the chamber and holding a substrate on which a precursor of an oxide thin film is formed;
A heating mechanism for heating the substrate;
A pH adjusting mechanism for adjusting the polar solvent to a pH of more than 7 and not more than 14;
A heating and pressurizing mechanism for heating or pressurizing the polar solvent;
A supply mechanism for supplying the polar solvent heated or pressurized by the heating and pressing mechanism to the substrate held by the holding mechanism and heated by the heating mechanism;
Comprising
A reaction apparatus characterized in that the precursor of the oxide thin film is crystallized by the polar solvent supplied by the supply mechanism. 請求項１１において、前記酸化物薄膜の前駆体の結晶化を行う際に、前記チャンバー内を前記超臨界状態に保持する第１機構と、前記第１機構により上昇した圧力を逃がす第２機構と、前記チャンバー内の圧力を大気圧に戻す第３機構とをさらに具備することを特徴とする反応装置。   The first mechanism for holding the inside of the chamber in the supercritical state when crystallization of the precursor of the oxide thin film according to claim 11, and the second mechanism for releasing the pressure raised by the first mechanism, And a third mechanism for returning the pressure in the chamber to atmospheric pressure.
JP2008204375A 2008-08-07 2008-08-07 Reaction apparatus and reaction method Expired - Fee Related JP5764788B2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2008204375A JP5764788B2 (en) 2008-08-07 2008-08-07 Reaction apparatus and reaction method
PCT/JP2009/063576 WO2010016424A1 (en) 2008-08-07 2009-07-30 Reaction device and reaction method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008204375A JP5764788B2 (en) 2008-08-07 2008-08-07 Reaction apparatus and reaction method

Publications (3)

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JP2010036152A JP2010036152A (en) 2010-02-18
JP2010036152A5 true JP2010036152A5 (en) 2011-09-22
JP5764788B2 JP5764788B2 (en) 2015-08-19

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JP2008204375A Expired - Fee Related JP5764788B2 (en) 2008-08-07 2008-08-07 Reaction apparatus and reaction method

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JP (1) JP5764788B2 (en)
WO (1) WO2010016424A1 (en)

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JP6083093B2 (en) * 2011-11-11 2017-02-22 国立大学法人佐賀大学 Plasma generator
CN104014289B (en) * 2014-06-10 2015-10-21 中国石油大学(北京) Reactor heater and hydro-thermal reaction method
KR102010264B1 (en) * 2016-10-10 2019-08-13 세메스 주식회사 Apparatus for treating substrate, and apparatus and method for monitoring process fluid of the same

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JP2000357686A (en) * 1999-01-27 2000-12-26 Matsushita Electric Ind Co Ltd Contamination removing method, film-forming method, semiconductor device and film-forming apparatus
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JP4234930B2 (en) * 2002-01-24 2009-03-04 セイコーエプソン株式会社 Film forming apparatus and film forming method
AU2003220039A1 (en) * 2002-03-04 2003-09-22 Supercritical Systems Inc. Method of passivating of low dielectric materials in wafer processing
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