JP2010024469A - Sputtering apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To suppress particles generated in an in-line sputtering apparatus. <P>SOLUTION: The sputtering apparatus 10 for executing the film deposition while moving a substrate 11 includes a film deposition chamber 14 capable of performing the atmospheric control, a sputter source 18 for depositing a film of a predetermined material by the sputtering method on the substrate 11 arranged in the film deposition chamber 14, a supporter (a substrate holder 12 and a supporter shaft 15) for supporting and conveying the substrate 11, and a magnetic motion transmitting mechanism for transmitting the motion from the outside of the film deposition chamber 14 to the supporter in the film deposition chamber 14 via the magnetic force. The supporter can be moved from the outside of the film deposition chamber, generation of particles associated with the movement of the supporter is suppressed, and pollution of the substrate is prevented. Further, when the supporter shaft is subjected to the straight motion via the magnetic force, the substrate can be moved by the supporter without using any rotating body such as a roller and a gear, and the amount of particles during the conveyance is reduced. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to an in-line type sputtering apparatus that performs film formation while moving a substrate.

As a sputtering apparatus for forming a thin film on a substrate, there are a batch type (single wafer type) sputtering apparatus and an in-line type sputtering apparatus.
As a method for transporting a substrate in a conventional in-line sputtering apparatus, there are those proposed in Patent Documents 1 to 3.
The one shown in FIG. 6 is proposed in Patent Document 1. In the figure, reference numeral 400 denotes a carrier that conveys a substrate 440. A driving force from a driving motor (not shown) is transmitted from the gear 410 to the groove forming portion 420 connected to the carrier 400, and the carrier 400 is conveyed while being supported by the rotary roll 430.
In the transport method proposed in Patent Document 2, rails are provided on the left and right ends of the transported body on which the substrate is placed, the rails are placed on the rotating rollers, and the rails are sent by the rotational force of the rotating rollers, The transported body moves.
In the transport method proposed in Patent Document 3, the substrate supported by the substrate holder is transported on the transport roller by the rotational force of the roller.
These in-line sputtering apparatuses are often used particularly when a transparent conductive film such as an ITO film is formed on a large glass substrate such as an FPD (flat panel display) substrate.
JP 2007-126703 A JP-A-11-158630 Japanese Patent Laid-Open No. 5-239641

Since the conventional in-line type sputtering apparatus is configured as described above, a frame body such as a substrate holder on which a substrate is placed must always be in contact with a member of a motion transmission mechanism such as a roller or a gear. There is a problem that particles are generated due to contact between the gear and the groove on the substrate holder side.
Conventional in-line sputtering apparatuses are often used for film formation on large glass substrates such as FPD substrates. However, applications to semiconductor Si substrates and the like are rarely adopted because there is a great concern about the generation of particles when the substrate moves during film formation.

  The present invention has been made to solve the above-described problems of the prior art, and provides an in-line type sputtering apparatus having a mechanism that suppresses generation of particles (particles) during transport film formation and substrate transport. It is aimed.

  That is, among the sputtering apparatuses of the present invention, the first aspect of the present invention is a sputtering apparatus that deposits a film while moving the substrate, and a sputtering chamber is formed on the substrate disposed in the deposition chamber in which the atmosphere can be controlled. Sputtering source for forming a film of a predetermined material by a method, a support for supporting and transporting the substrate, and magnetic motion transmission for transmitting motion from outside the film formation chamber to the support in the film formation chamber via magnetic force And a mechanism.

  A sputtering apparatus according to a second aspect of the present invention is the sputtering apparatus according to the first aspect, wherein the support has at least one support shaft, and the magnetic motion transmission mechanism uses the support shaft via a magnetic force. It is characterized by a linear motion.

  A sputtering apparatus according to a third aspect of the present invention is characterized in that, in the first or second aspect of the present invention, the sputtering source is an opposed target type sputtering source having at least one pair of opposed targets.

  According to a fourth aspect of the present invention, there is provided a sputtering apparatus according to any one of the first to third aspects of the present invention, wherein the support body supports the substrate surface sideways and moves laterally.

  According to a fifth aspect of the present invention, there is provided a sputtering apparatus according to any one of the first to third aspects of the present invention, wherein the support body supports the substrate surface vertically and moves in the vertical direction.

  A sputtering apparatus according to a sixth aspect of the present invention is the storage device according to any one of the first to fifth aspects, wherein a support portion that movably supports the support body communicates with the film formation chamber and is provided outside the film formation chamber. The support is supported only by the support and is protruded from the storage into the film forming chamber, and motion is transmitted to the support via the magnetic force so that the support is in the storage. It moves while being supported by the said support part.

  According to the present invention, in a sputtering apparatus that forms a film while moving the substrate, a film forming chamber capable of controlling the atmosphere, and a film of a predetermined material formed on the substrate disposed in the film forming chamber by a sputtering method. A sputtering source, a support for supporting and transporting the substrate, and a magnetic motion transmission mechanism for transmitting motion from outside the film formation chamber to the support in the film formation chamber via magnetic force. When the film is formed, the support can be moved from the outside of the film formation chamber, and the generation of particles accompanying the movement of the support is suppressed and the substrate is prevented from being contaminated.

  If the support has at least one support shaft, and the magnetic motion transmission mechanism linearly moves the support shaft through magnetic force, a rotating body such as a roller or a gear is used. In addition, since the substrate can be moved by a support having a linear motion mechanism, there is an effect of reducing particles during conveyance as much as possible. Accordingly, the present invention can be put to practical use by adopting the present invention also in a semiconductor film forming apparatus having a high level which causes a problem of the amount of generated particles.

  Further, if the support is to be supported and moved only by the support provided in the storage unit communicating with the film forming chamber, the support and the support shaft provided on the support are separated from the sputtered particles generated from the sputtering source. By protecting and preventing deposition of the film on the support portion and the support shaft, the generation of particles can be further suppressed when the support moves.

(Embodiment 1)
Hereinafter, an embodiment of the present invention will be described with reference to FIGS.
In the figure, reference numeral 10 denotes a sputtering apparatus for forming a film while placing the substrate 11 on the substrate holder 12 and moving it.
The sputtering apparatus 10 has a film formation chamber 14 in which the atmosphere can be adjusted. The film forming chamber 14 has an airtight space so that the inside can be kept in a vacuum state, and has a vacuum exhaust pump (rotary, turbo molecular pump, cryopump, etc.) not shown as an exhaust mechanism.
Further, a gas introduction line (not shown) capable of introducing gas is provided, and Ar gas can be introduced. In addition, a reactive gas such as O ₂ or N ₂ can be introduced during the film forming process. Furthermore, it can be adjusted by providing a pressure regulator for controlling the gas pressure or changing the gas introduction amount.

A load lock chamber 13 partitioned by a valve (not shown) is connected to the front stage of the film forming chamber 14. The substrate 11 is transferred from the load lock chamber 13 to the film forming chamber 14. At this time, the substrate 11 can be transported on a transport tray.
In FIG. 1, only the load lock chamber 13 and the film forming chamber 14 are configured, but a transfer chamber may be disposed between the load lock chamber 13 and the film forming chamber 14. Furthermore, a multi-chamber system can be supported by installing a transfer robot in the transfer chamber.

A sputtering source 18 is connected to the film forming chamber 14 on the lower side of the film forming chamber 14 so that sputtering from the sputtering source 18 into the film forming chamber 14 is possible.
The substrate holder 12 is fixed in a horizontal state between the tips of two support shafts 15, 15 arranged in parallel and horizontally in the film formation chamber 14. The film forming chamber 14 can be moved by a straight movement. The substrate holder 12 and the support shaft 15 constitute a support 17 of the present invention.

  As shown in FIGS. 1 and 2, a part of the support shaft 15 is housed in a housing portion 16 provided outside the film forming chamber 14 so as to communicate with the film forming chamber 14. The storage portion 16 is sealed except for the communication portion with the film formation chamber 14, and has the same atmosphere as the atmosphere of the film formation chamber 14. The storage portion 16 has a shaft hole through which the support shaft 15 is inserted, and has a bearing structure in which a bearing 20 is disposed on the inner peripheral surface on the tip end side of the shaft hole.

A motion transmitting portion 21b having a ferromagnetic material for magnetic coupling is fixed to the base end side of the support shaft 15 stored in the storage portion 16. On the other hand, a motion transmission unit 21a having a ferromagnetic material that forms a magnetic coupling with the ferromagnetic material of the motion transmission unit 21b is provided outside the storage unit 16. The movement transmitting portion 21a is movable in the longitudinal direction of the storage portion 16, and is moved by being driven by a driving device (not shown). In addition, each said ferromagnetic body may be comprised with a permanent magnet, and may be comprised with an electromagnet. The motion transmission unit 21a and the motion transmission unit 21b constitute the motion transmission mechanism of the present invention. The magnetic force may use either an attractive force or a repulsive force.
Part of the support shaft 15 is housed in the housing portion 16 as described above, and linear movement is possible by the support by the bearing 20 and the non-contact support by the magnetic coupling, and the bearing 20 and the magnetic cup. The ring corresponds to the support portion of the present invention. A part of the support shaft 15 protrudes from the storage portion 16 into the film forming chamber 14.

  When the support shaft 15 is retracted and pulled out of the film forming chamber 14 due to the linear motion, most of the support shaft 15 is placed in the storage portion 16 except for the portion fixed to the substrate holder 12 as shown in FIG. Is housed, moved forward, and introduced into the film formation chamber 14, most of the protrusion protrudes from the storage portion 16 into the film formation chamber 14 as shown in FIG. Sputtering can be performed while moving the support shaft 15 by the linear motion and moving the substrate fixed to the substrate holder 12.

As described above, by moving the motion transmitting portion 21a on the atmosphere side, the magnetic force of the transmitting portion 21a is transmitted to the motion transmitting portion 21b, and the motion transmitting portion 21b moves along with the movement of the motion transmitting portion 21a. Furthermore, the support shaft 15 to which the motion transmitting portion 21b is fixed moves linearly. While the support shaft 15 is supported and moved in the storage portion 16, the place where the support shaft 15 contacts is only the bearing 20 installed in the storage portion 16, such as a roller or a gear. In comparison, the number of contact points can be greatly reduced, and as a result, generation of particles can be suppressed. Further, since these contact portions are located in the storage portion outside the film forming chamber 14, contamination in the film forming chamber 14 is further suppressed.
In particular, the generation of particles can be further suppressed by having a mechanism for moving the support body in a straight line without using a rotating body such as a roller or a gear to move the support body shaft 15.
In this embodiment, the substrate is transported using the two supports 17, but the number of supports is not necessarily two, and may be one or three or more.

  Furthermore, in order to prevent the sputtered particles jumping out from the sputter source 18 from accumulating on the support shaft 15 stored in the storage section 16, a lower part of the film forming chamber 14 below the moving region of the support shaft 15. A cover 19 is provided on the side. As a result, particles generated when the support shaft 15 and the bearing come into contact can be prevented more reliably.

  Further, by setting the substrate 11 on the substrate holder 16 with the substrate 11 on the back surface, and placing the sputtering source 18 on the bottom surface of the film formation chamber 14 to form a film, other than the sputtered particles deposited on the substrate 11. The particles can be further suppressed.

  The sputtering source 18 can be applied not only to a general magnetron sputtering method but also to an opposed target sputtering method. Furthermore, by arranging a plurality of sputtering sources, a multilayer film can be formed in one film forming chamber. Films can also be formed.

(Embodiment 2)
Next, another embodiment will be described with reference to FIG. Note that details of the same configuration (motion transmission mechanism and the like) as in the above embodiment are omitted or simplified.
The sputtering apparatus 100 includes a film formation chamber 104, and a substrate 101 is transferred to the film formation chamber 104 from a transfer chamber or a load lock chamber (not shown) that is partitioned from the film formation chamber 104 by a valve. At this time, the substrate 101 may be transported on a transport tray.

  The substrate 101 is placed on the substrate holder 102 fixed to the support shafts 105 and 105, and can move in the film forming chamber 104 by the linear movement of the support shafts 105 and 105. At this time, the contact portion of the support shaft 105 is only a bearing installed in the storage portion 106 as in the above embodiment, and generation of particles in the conveyance of the substrate holder 102 can be suppressed as much as possible. The substrate holder 102 and the support shaft 105 constitute a support 107, and a plurality of support shafts 105 may be used or a single support shaft 105 may be used.

  In the film forming chamber 104, a sputtering source 108 having a pair of targets arranged opposite to each other is provided. The sputtering source 108 may be incorporated in the film forming chamber 104 or may be attached to the film forming chamber 104 as another independent unit. The target of the sputtering source 108 has a structure in which magnets are arranged on the outer periphery and the rear surface, and forms a magnetic field around the opposing target to restrain plasma formed between the targets. Due to the restraint of the plasma by the magnetic field, the negatively charged particles (electrons) do not reach the substrate, and damage to the film formation surface is reduced. A DC pulse power source and an RF power source are connected individually or both to the target, and power necessary for sputtering (plasma generation) can be input.

The sputter source 108 has a structure in which the side and bottom of the opposing target are closed and only the top is open.
A cover for preventing excessive diffusion of sputtered particles is provided in addition to the opening of the sputtering source 108. In particular, by providing covers 109 and 109 in addition to the upper part of the opening in order to prevent the sputter particles jumping from the sputter source 108 from accumulating on the support shaft 105, contact between the support shaft 105 and the bearing is achieved. Prevents particles that sometimes occur.

FIG. 3 shows a position where the support shaft 105 has moved forward and the substrate 101 and the substrate holder 102 have moved directly above the sputtering source 108. When starting the film forming process, the substrate 101 and the substrate holder 102 are moved to a position away from the opening of the sputtering source 108.
Electric power necessary for sputtering is applied to the sputtering source 108 from a DC pulse power source and an RF power source to generate plasma. At this time, sputtered particles scatter from the target, and jump out into the film formation chamber 104 through the opening. The support shaft 105 is covered with a cover 109 to prevent spatter particles from adhering. At this time, a shutter (not shown) can be attached to the opening to prevent excessive sputter particles from being introduced into the film forming chamber 104.
After the plasma is generated, the substrate 101 and the substrate holder 102 are passed over the opening of the sputtering source 108 by the linear movement of the support shaft 105, and sputtered particles are deposited on the substrate 101. By controlling the straight traveling speed of the support shaft 105, the film thickness on the substrate 101 can be controlled. The substrate 101 is inverted in advance so as to face down before being transferred to the film formation chamber 104, thereby further preventing particles from adhering to the surface of the substrate 101.

(Embodiment 3)
In each of the above-described embodiments, one sputtering source has been described. However, a plurality of sputtering sources may be provided. In the sputtering apparatus 200 in FIG. 4, the film formation chamber 204 is configured to transport the substrate 201 in the horizontal direction, and a plurality of sputtering sources 208 are attached to the film formation chamber 204. Note that details of the same configuration (motion transmission mechanism and the like) as in the above embodiment are omitted or simplified.

The film formation chamber 204 can be evacuated by an evacuation pump as in the above embodiment, and a desired gas can be introduced by adjusting the pressure or adjusting the introduction amount.
The substrate 201 is transferred to the film formation chamber 204 from a transfer chamber or a load lock chamber (not shown) partitioned from the film formation chamber 204 by a valve. At this time, the substrate 201 may be transported on a transport tray.
The substrate 201 is placed on a substrate holder 202 and can move in the film forming chamber 204 by a linear movement of a support shaft 205 that fixes the substrate holder 202. At this time, the contact portion of the support shaft 205 is only a bearing installed in the storage portion 206 as in the above embodiments, and the generation of particles in the conveyance of the substrate holder 202 can be suppressed as much as possible. A substrate holder 202 and a support shaft 205 constitute a support 207, and a plurality of support shafts 205 may be used or a single support shaft 205 may be used.

  In the film forming chamber 204, the sputtering source 208 having a pair of targets arranged opposite to each other is provided. The sputtering source 208 may be incorporated in the film forming chamber 204 or may be attached to the film forming chamber 204 as another independent unit. The target of the sputtering source 208 has a structure in which magnets are arranged on the outer periphery and the back surface, and forms a magnetic field around the opposing target to restrain plasma formed between the targets. Due to the restraint of the plasma by the magnetic field, the negatively charged particles (electrons) do not reach the substrate, and damage to the film formation surface is reduced. A DC pulse power source and an RF power source are connected to the target individually or both, and power necessary for sputtering (plasma generation) can be input.

  The sputter source 208 has a structure in which the side and bottom of the opposing target are closed and only the top is open. FIG. 4 shows a position where the substrate 201 and the substrate holder 202 are moved immediately above the sputtering source 208. When starting the film forming process, the substrate 201 and the substrate holder 202 are moved to a position away from the opening of the sputtering source 208.

The sputtering source 208 includes two sputtering sources 208a and 208b. First, power necessary for sputtering is supplied from the DC pulse power source and the RF power source to the sputtering source 208a to generate plasma. At this time, sputtered particles scatter from the target, and jump out into the film formation chamber 204 through the opening. At this time, a shutter can be attached to the opening to prevent excessive sputter particles from being introduced into the film forming chamber 204.
After the plasma is generated, the substrate 201 and the substrate holder 202 are passed over the opening of the sputtering source 208 a by the linear movement of the support shaft 205, and sputtered particles are deposited on the substrate 201. By controlling the rectilinear speed of the support shaft 205, the film thickness on the substrate 201 can be controlled. The substrate 201 is inverted in advance so as to face down before being transported to the film forming chamber 204 to prevent particles from adhering to the surface of the substrate 201. Further, a cover for preventing excessive diffusion of sputtered particles is provided in addition to the opening of the sputtering source 208a. In particular, by providing the cover 209 for preventing the sputtered particles jumping from the sputter source 208 from depositing on the support shaft 205, particles generated when the support shaft 205 and the bearing come into contact can be prevented.

  After the film formation at the sputtering source 208a is completed, plasma is similarly generated at the sputtering source 208b, and the substrate 201 and the substrate holder 202 are moved over the opening of the sputtering source 208b by the linear movement of the support shaft 205. Pass through and deposit sputtered particles on the substrate 201. By continuously forming the film using the sputtering source 208a and the sputtering source 208b, a multilayer film can be formed in one film formation chamber.

(Embodiment 4)
In each of the above-described embodiments, the film formation chamber is configured to transfer the substrate in the horizontal direction. In the present invention, the present invention is not limited to this. With the substrate set in a vertical direction, the substrate is set in the substrate holder and moved in the vertical direction, and the sputtering source is disposed on the side surface of the film formation chamber to form a film. In addition, particles other than the sputtered particles deposited on the substrate can be suppressed. Below, this embodiment is described based on FIG. Note that details of the same configuration (motion transmission mechanism and the like) as in the above embodiment are omitted or simplified.

The film formation chamber 304 can be evacuated by an evacuation pump as in the above embodiment, and a desired gas can be introduced by adjusting the pressure or adjusting the amount of introduction.
The substrate 301 is transferred to the film formation chamber 304 from the transfer chamber or load lock chamber partitioned from the film formation chamber 304 by a valve. At this time, the substrate 301 may be transported on a transport tray.
In this embodiment, the substrate holder 302 is fixed vertically on a support shaft 305 disposed horizontally in the film forming chamber 304. The substrate 301 is held in a vertical state on the side surface of the substrate holder 302, and can be moved in the film forming chamber 304 by the straight movement of the support shaft 305. At this time, the contact portion of the support shaft 305 is only a bearing installed in the storage unit 306 as in the above-described embodiments, and generation of particles in the conveyance of the substrate holder 302 can be suppressed as much as possible. The substrate holder 302 and the support shaft 305 constitute a support 307, and a plurality of support shafts 305 may be used.

In the film forming chamber 304, a sputtering source 308 having a pair of targets arranged opposite to each other is provided. The sputtering source 308 may be incorporated in the film forming chamber 304 or may be attached to the film forming chamber 304 as another independent unit. The target of the sputtering source 308 has a structure in which magnets are arranged on the outer periphery and the back surface, and a magnetic field is formed around the opposing target to restrain plasma formed between the targets. Due to the restraint of the plasma by the magnetic field, the negatively charged particles (electrons) do not reach the substrate, and damage to the film formation surface is reduced. A DC pulse power source and an RF power source are connected individually or both to the target, and power necessary for sputtering (plasma generation) can be input.
The sputter source 308 has a structure in which the upper and lower surfaces and the outer surface of the facing target are closed and only the inner surface is opened.

FIG. 5 shows a position where the substrate 301 and the substrate holder 302 are moved to the side of the sputtering source 308.
When starting the film forming process, the substrate 301 and the substrate holder 302 are moved to a position away from the opening of the sputtering source 308.
Electric power necessary for sputtering is supplied from the DC pulse power source and the RF power source to the sputtering source 308 to generate plasma. At this time, sputtered particles scatter from the target, and jump out into the film formation chamber 304 through the opening. At this time, a shutter (not shown) can be attached to the opening to prevent excessive sputter particles from being introduced into the film formation chamber 304 in the previous period.
After the plasma is generated, the substrate 301 and the substrate holder 302 are passed by the side of the opening of the sputtering source 308 by the linear movement of the support shaft 305, and sputtered particles are deposited on the substrate 301. By controlling the straight speed of the support shaft 305, the film thickness on the substrate 301 can be controlled. Since the substrate 301 is arranged in the vertical direction, adhesion of particles to the surface of the substrate 301 is prevented. Further, a cover for preventing excessive diffusion of sputtered particles is provided in addition to the opening of the sputtering source 308. In particular, by providing the support shaft 305 with a cover 309 for preventing the sputtered particles jumping from the sputter source 308 from accumulating, particles generated when the support shaft 305 contacts the bearing can be prevented.

  As mentioned above, although this invention was demonstrated based on said each embodiment, this invention is not limited to the content of description of each said embodiment, As long as it does not deviate from the scope of the present invention, an appropriate change is carried out. Is possible.

FIG. 1 is a plan view and a side view showing an outline of a sputtering apparatus according to Embodiment 1 of the present invention. FIG. 2 is also a detailed view showing the motion transmission mechanism of the support. FIG. 3 is a plan view and a side view showing an outline of a sputtering apparatus according to another embodiment of the present invention. FIG. 4 is a plan view and a side view showing an outline of a sputtering apparatus in still another embodiment of the present invention. FIG. 5 is a plan view and a side view showing an outline of a sputtering apparatus in still another embodiment of the present invention. FIG. 6 is a schematic diagram showing a part of a conventional in-line sputtering apparatus. Explanation of symbols

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Sputtering device 11 Substrate 12 Substrate holder 13 Load lock chamber 14 Film forming chamber 15 Support shaft 16 Storage portion 17 Support 18 Sputter source 19 Cover 20 Bearing 21a Motion transmission portion 21b Motion transmission portion 100 Sputter device 101 Substrate 102 Substrate holder 104 Deposition chamber 105 Support shaft 106 Storage section 107 Support body 108 Sputtering source 109 Cover 200 Sputtering apparatus 201 Substrate 202 Substrate holder 204 Deposition chamber 205 Supporting body shaft 206 Storage section 207 Support body 208 Sputtering source 209 Cover 300 Sputtering apparatus 301 Substrate 302 Substrate holder 304 Deposition chamber 305 Support shaft 306 Support storage 307 Support 308 Sputter source 309 Cover

Claims (6)

  In a sputtering apparatus for forming a film while moving the substrate, a film forming chamber capable of controlling the atmosphere, a sputtering source for forming a film of a predetermined material on the substrate disposed in the film forming chamber by a sputtering method, and the substrate A sputtering apparatus comprising: a support that supports and conveys the substrate; and a magnetic motion transmission mechanism that transmits motion from outside the film formation chamber to the support in the film formation chamber via magnetic force.   2. The sputter according to claim 1, wherein the support has at least one support shaft, and the magnetic motion transmission mechanism linearly moves the support shaft through a magnetic force. apparatus.   The sputtering apparatus according to claim 1, wherein the sputtering source is a counter target type sputtering source having at least one pair of targets facing each other.   The sputtering apparatus according to any one of claims 1 to 3, wherein the support body supports the substrate surface sideways and moves laterally.   The sputtering apparatus according to claim 1, wherein the support body supports the substrate surface in a vertical direction and moves in the vertical direction.   A support unit that movably supports the support body is disposed in a storage unit that communicates with the film formation chamber and is provided outside the film formation chamber, and the support member is supported only by the support unit and from the storage unit. 6. The film forming chamber according to claim 1, wherein the support is transferred to the support through the magnetic force, and the support is moved while being supported by the support in the storage unit. The sputtering apparatus in any one.

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