JP2010021243A5

JP2010021243A5 -

Info

Publication number: JP2010021243A5
Application number: JP2008178863A
Authority: JP
Filing date: 2008-07-09
Publication date: 2012-02-23
Anticipated expiration: 2028-07-09

Description

図４に示すように、インジェクターベース８１は、誘電体板１６の下面６３に達しない範囲で、保持台１４に対向する壁面８２から保持台１４側に延びる突出部８３を含む。具体的には、図４中に示す保持台１４の上面８４から誘電体板１６の下面６３までの距離Ｌ_１よりも、保持台１４の上面８４から突出部８３の先端部８５までの距離Ｌ_２の方が長く構成されている。また、突出部８３の先端部８５には、供給孔８６が設けられている。 As shown in FIG. 4, the injector base 81 includes a protruding portion 83 extending from the wall surface 82 facing the holding table 14 toward the holding table 14 in a range not reaching the lower surface 63 of the dielectric plate 16. Specifically, the distance L from the upper surface 84 of the holding table 14 to the tip 85 of the protrusion 83 is larger than the distance L ₁ from the upper surface 84 of the holding table 14 to the lower surface 63 of the dielectric plate 16 shown in FIG. ₂ is longer. In addition, a supply hole 86 is provided at the distal end portion 85 of the protruding portion 83 .

Claims

A processing container for performing plasma processing on the substrate to be processed therein;
A holding table disposed in the processing container and holding the substrate to be processed thereon;
A microwave generator for generating microwaves for plasma excitation;
A dielectric plate provided at a position facing the holding table, and for introducing a microwave into the processing container;
A plasma processing apparatus comprising: a reactive gas supply unit configured to supply a reactive gas for plasma processing toward a central region of the substrate to be processed held by the holding table;
The reaction gas supply unit includes an injector base disposed at a position retracted inward of the dielectric plate from the wall surface of the dielectric plate facing the holding table,
The plasma processing apparatus, wherein the injector base is provided with a supply hole for supplying a plasma processing reaction gas into the processing container.

The plasma processing apparatus according to claim 1, wherein the supply hole of the injector base is provided on a wall surface facing the holding table.

The plasma processing apparatus according to claim 2, wherein a wall surface facing the holding table is flat.

The dielectric plate is disk-shaped,
The plasma processing apparatus according to claim 1, wherein the injector base is provided so that the supply hole is positioned at a radial center of the dielectric plate.

A processing container for performing plasma processing on the substrate to be processed therein;
  A holding table disposed in the processing container and holding the substrate to be processed thereon;
  A microwave generator for generating microwaves for plasma excitation;
  A dielectric plate provided at a position facing the holding table, and for introducing a microwave into the processing container;
  A plasma processing apparatus comprising: a reactive gas supply unit configured to supply a reactive gas for plasma processing toward a central region of the substrate to be processed held by the holding table;
  The reaction gas supply unit includes an injector base disposed at a position retracted inward of the dielectric plate from the wall surface of the dielectric plate facing the holding table,
  The injector base material is anodized aluminum or Y _２2 O _３3 (Yttria) is coated aluminum,
  The injector base is housed in a base housing portion that houses the injector base provided on the dielectric plate,
  An O-ring is interposed between the injector base and the base accommodating portion,
  The injector base is provided with a supply hole for supplying a reaction gas for plasma processing into the processing container,
  The plasma processing apparatus, wherein the supply hole is provided above a lower surface of the dielectric plate which is a wall surface of the dielectric plate facing the holding table.