JP2010010328A - Method of manufacturing space sealed type semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a space sealed type semiconductor device with a semiconductor or an MEMS simplifying the steps and increasing reliability of the device. <P>SOLUTION: The method includes steps of: forming a photosensitive resin layer having adhesion and curability on one surface of a cover base material 10 after irradiated with light; partially removing the photosensitive resin layer by photolithography for removing part not light irradiated after irradiation of a predetermined part of the photosensitive resin layer with light to form a spacer part 30 constituted by the residue of the photosensitive resin layer and having adhesion; applying the cover base material 10 onto a functional surface of a wafer 50 on which a function part 40 having the semiconductor or the MEMS is formed via the spacer part 30 to cure the spacer part 30 to obtain a space sealed type laminate; and dividing the space sealed type laminate by dicing to obtain the space sealed-type semiconductor device. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a method for manufacturing a hollow sealed semiconductor device, and more particularly to a method for manufacturing a hollow sealed semiconductor device including a semiconductor or a MEMS (micro electro mechanical system).

  In recent years, with the demand for higher functionality and lighter and thinner electronic devices, electronic components have been integrated with higher density and further with higher density packaging. Semiconductor devices used in such electronic devices are becoming smaller and multi-pin, and mounting substrates for mounting electronic components including semiconductor devices are also becoming smaller and thinner. ing.

  Along with the miniaturization of such semiconductor devices, there is a limit to the miniaturization of a conventional semiconductor device using a lead frame. Therefore, a BGA (Ball Grid Array) or CSP (CSP) for mounting a semiconductor element on a substrate is used. In addition to semiconductor devices adopting an area mounting type mounting method such as Chip Scale Package, semiconductor devices on which electronic components having special functions such as MEMS (micro electro mechanical system) are mounted have been proposed.

  As a method for manufacturing a semiconductor device mounted with such a MEMS, for example, Japanese Patent Application Laid-Open No. 2004-255487 (Patent Document 1) includes a recess forming step for forming a plurality of recesses on a wafer, A MEMS element forming step for forming a plurality of MEMS elements, a terminal forming step for forming external connection terminals connected to the MEMS elements in a region other than the concave portion of the wafer, and a base material on which a resin film is formed are prepared. The resin film formed on the base material is pasted on the wafer, and the base material is peeled off from the resin film so that the resin film is formed on the wafer. A MEMS manufacturing method is disclosed that includes a resin film forming step for sealing the inside of a plurality of the recesses, and a dividing step for dividing the wafer into a plurality of the recesses. . However, in the MEMS manufacturing method described in Patent Document 1, it is necessary to form a recess on the wafer in order to form the MEMS on the wafer. The semiconductor device could not be manufactured.

  Japanese Patent Laid-Open No. 2003-347357 (Patent Document 2) discloses that a photosensitive resin is disposed on a semiconductor or MEMS element functional surface, and a space portion is formed between the semiconductor element functional surface and the substrate by a photolithography technique. A method of manufacturing a semiconductor package for forming the substrate is disclosed. However, in the method of manufacturing a semiconductor package as described in Patent Document 2, it is necessary to dispose a photosensitive resin on the functional surface, so that there is a problem that the semiconductor or the MEMS is contaminated by the photosensitive resin.

In order to solve such a problem, for example, Japanese Patent Application Laid-Open No. 2007-189032 (Patent Document 3) discloses a manufacturing method of a hollow sealed semiconductor device including a semiconductor or MEMS, and a cover base material is exposed to light. A step of applying a photosensitive resin to form a photosensitive resin layer on one surface of the cover substrate, and a spacer portion formed by removing a part of the photosensitive resin layer by photolithography to form the remaining portion of the photosensitive resin layer Forming a hollow-sealed laminate by attaching a cover substrate to a functional surface of a wafer on which a functional part including semiconductor or MEMS is formed via a spacer part, and the hollow sealing The manufacturing method of the hollow sealing semiconductor device including the process of dividing | segmenting a type | mold laminated body by dicing and obtaining the said hollow sealing semiconductor device is disclosed.
JP 2004-255487 A JP 2003-347357 A JP 2007-189032 A

  However, in the method for manufacturing a hollow-sealed semiconductor device as described in Patent Document 3 above, in order to attach and bond a cover base material to a functional surface of a wafer via a spacer portion, for example, the functional surface of the wafer A method of additionally forming an adhesive layer in advance on a portion to which the spacer portion is to be attached is employed, and it is possible to impart adhesiveness to either the wafer or the cover substrate. It was necessary. Further, when the adhesive layer is additionally formed in this way, an increase in defects due to connection due to an increase in the interface is considered, and from the viewpoint of simplification of the process, such an adhesive is also considered. Even without forming a layer, it has been demanded that a cover base material can be bonded and bonded to a functional surface of a wafer via a spacer portion.

  The present invention has been made in view of the above-mentioned problems of the prior art, and efficiently and reliably manufactures a hollow sealed semiconductor device including a semiconductor or MEMS while sufficiently preventing contamination by a photosensitive resin. In addition, it is possible to attach and bond the cover base material to the functional surface of the wafer via the spacer portion without additional formation of an adhesive layer, thus simplifying the process and improving the reliability of the device It is an object of the present invention to provide a method for manufacturing a hollow sealed semiconductor device capable of achieving the above.

  As a result of intensive studies to achieve the above object, the present inventors applied a photosensitive resin to the cover base material to form a photosensitive resin layer on one surface of the cover base material, A part of the photosensitive resin layer is removed by photolithography to form a spacer part composed of the remaining part of the photosensitive resin layer, and then the cover base material is attached to the functional surface of the wafer via the spacer part, In a method of manufacturing a hollow sealed semiconductor device including a semiconductor or MEMS by dividing this, a spacer portion having adhesiveness is formed by using a photosensitive resin having adhesiveness and curable property after light irradiation. As a result, the inventors have found that the above object can be achieved and have completed the present invention.

That is, the manufacturing method of the hollow sealing semiconductor device of the present invention is a manufacturing method of a hollow sealing semiconductor device including a semiconductor or MEMS,
A step of applying a photosensitive resin having adhesiveness and curability to the cover substrate after the light irradiation, and forming a photosensitive resin layer on one surface of the cover substrate;
A part of the photosensitive resin layer is removed by photolithography for removing a portion that is not irradiated with light after irradiating a predetermined portion of the photosensitive resin layer, and consists of the remaining portion of the photosensitive resin layer and adhesiveness. Forming a spacer portion having
Attaching the cover base material to the functional surface of a wafer on which a functional unit including a semiconductor or MEMS is formed via the spacer unit, and curing the spacer unit to obtain a hollow sealed laminate;
Dividing the hollow sealed laminate by dicing to obtain the hollow sealed semiconductor device;
It is the method characterized by including.

  In such a method for manufacturing a hollow-sealed semiconductor device of the present invention, since the spacer portion itself has adhesiveness, the functional surface of the wafer can be obtained without forming an adhesive layer on the wafer as in the prior art. A cover base material can be attached to and bonded to each other via a spacer portion. Therefore, in the present invention, it becomes possible to simplify the process and increase the number of defects due to connection due to the increase in the interface of the hollow-sealed semiconductor device due to the presence of the adhesive layer as in the prior art. Therefore, the structural reliability of the hollow-sealed semiconductor device can be improved.

  In the present invention, after forming a spacer portion consisting of the remaining portion of the photosensitive resin layer on the cover base material, the wafer and the cover base material are pasted through the spacer portion. There is no need to form a recess on the top. Further, in the present invention, since the photosensitive resin is applied to the cover base material, it is not necessary to apply the photosensitive resin to the functional surface of the wafer on which the semiconductor or the MEMS is disposed, and the semiconductor or the MEMS is photosensitive. It is reliably prevented from being contaminated by the resin.

  As described above, according to the present invention, a hollow sealed semiconductor device including a semiconductor or MEMS can be efficiently and reliably manufactured while sufficiently preventing contamination by a photosensitive resin, and an adhesive layer is added. Even if it is not formed manually, the cover base material can be stuck and bonded to the functional surface of the wafer via the spacer portion, so that the process can be simplified and the reliability of the apparatus can be improved.

  In the method for manufacturing a hollow-sealed semiconductor device of the present invention, it is preferable that a through electrode is further formed on the wafer. Since the through electrode is formed on the wafer in this way, an external terminal can be provided on the surface where the functional portion of the wafer is not disposed, and a part of the cover base material is removed by dicing as in the past. As a result, there is no need to expose the terminal portion, so that a hollow-sealed semiconductor device tends to be obtained more efficiently.

  ADVANTAGE OF THE INVENTION According to this invention, the hollow sealing semiconductor device provided with a semiconductor or MEMS can be manufactured efficiently and reliably, fully preventing the contamination by the photosensitive resin, and an adhesive layer is additionally formed. Even if it is not necessary, a cover base material can be attached and bonded to the functional surface of the wafer via a spacer portion, so that a hollow-sealed semiconductor device capable of simplifying the process and improving the reliability of the device can be obtained. A manufacturing method can be provided.

  Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings. In the following description and drawings, the same or corresponding elements are denoted by the same reference numerals, and duplicate descriptions are omitted.

  In this embodiment, first, a photosensitive resin having adhesiveness and curability after light irradiation is applied to a cover base material, and a photosensitive resin layer is formed on one surface of the cover base material ( Step (i)).

  FIG. 1 is a schematic longitudinal sectional view showing a cover base material on which a photosensitive resin layer is formed. In the cover base material 10 shown in FIG. 1, a photosensitive resin layer 20 is formed on one surface thereof. The cover base material 10 on which such a photosensitive resin layer 20 is formed can be obtained by performing the step (i).

  As the cover base material 10, any base material that can be used as a cover for sealing a space containing a semiconductor or MEMS and can be diced can be used without particular limitation. In the present embodiment, glass is used as the cover base material 10.

  Moreover, the photosensitive resin used for this invention needs to be a photosensitive resin which has adhesiveness and sclerosis | hardenability after light irradiation. As such a photosensitive resin, for example, a photosensitive resin composition described in JP-A-2006-3860 can be used. Specifically, two glycidyl ether groups derived from bisphenols are used. And a) a saturated dicarboxylic acid or acid anhydride thereof and b) a saturated tetracarboxylic acid or acid dianhydride having an a / b molar ratio of 0.1. The photosensitive resin composition which contains the alkali-soluble resin (A) obtained by making it react in the range used as -10 as a main component of a resin component can be used. By using such a photosensitive resin composition, the photosensitive resin layer 20 having adhesiveness can be formed even after the photocuring reaction. Therefore, the photosensitive resin layer itself has adhesiveness in the step (ii) described later. A spacer part can be formed. In addition, such a photosensitive resin composition can be manufactured by the method of Unexamined-Japanese-Patent No. 2006-3860, for example.

  In the photosensitive resin used for this invention, it is preferable that the said alkali-soluble resin (A) is a compound represented by following General formula (1).

In the general formula (1), R ₁ , R ₂ , R ₃ , and R ₄ independently represent a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, a halogen atom, or a phenyl group, but R ₁ , R ₂ , R ₃ and R ₄ are preferably hydrogen atoms. R ₅ represents a hydrogen atom or a methyl group. Further, A represents —CO—, —SO ₂ —, —C (CF ₃ ) ₂ —, —Si (CH ₃ ) ₂ —, —CH ₂ —, —C (CH ₃ ) ₂ —, —O—, 9 , 9-fluorenyl group or a direct bond, A is preferably a 9,9-fluorenyl group. X represents a tetravalent carboxylic acid residue. Y ₁ and Y _{2 each} independently represent a hydrogen atom, a carboxylic acid residue represented by —OC—Z— (COOH) _m (m represents an integer of 1 to 3). Furthermore, although n shows the integer of 1-20, it is preferable that the average value of n is the range of 1-10.

  The photosensitive resin used in the present invention, in addition to the alkali-soluble resin (A), a photopolymerizable monomer (B) having at least one ethylenically unsaturated bond, a photopolymerization initiator or a sensitizer (C), Moreover, it is preferable to further contain an epoxy compound (D) having at least one epoxy group.

  Examples of the photopolymerizable monomer (B) include monomers having a hydroxyl group such as 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, and 2-ethylhexyl (meth) acrylate; ethylene glycol di (meth) ) Acrylate, diethylene glycol di (meth) acrylate, triethylene glycol di (meth) acrylate, tetraethylene glycol di (meth) acrylate, tetramethylene glycol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, trimethylolethanetri (Meth) acrylate, pentaerythritol di (meth) acrylate, pentaerythritol tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, dipentaeth Sri Tall tetra (meth) acrylate, dipentaerythritol hexa (meth) acrylate, glycerol (meth) (meth) acrylic acid esters such as acrylate. These photopolymerizable monomers (B) can be used singly or in combination of two or more.

  The content of the photopolymerizable monomer (B) is such that the mass ratio [(A) / (B)] of the alkali-soluble resin (A) and the photopolymerizable monomer (B) is 20/80 to 90. The amount is preferably 10/10, more preferably 40/60 to 80/20, and particularly preferably 60/40 to 80/20. When the mass ratio is less than the lower limit, the cured product after photocuring becomes brittle, and since the acid value of the coating film is low in the unexposed area, the solubility in an alkaline developer is lowered, and the pattern edge is jagged and sharp. On the other hand, if the above upper limit is exceeded, the proportion of photoreactive functional groups in the resin is small and the formation of a crosslinked structure is insufficient, and the acid value in the resin component is too high. As a result, the solubility of the exposed portion in the alkaline developer is increased, so that the pattern formed tends to be narrower than the target line width and the pattern is likely to be lost.

  Examples of the photopolymerization initiator or sensitizer (C) include acetophenone, 2,2-diethoxyacetophenone, p-dimethylacetophenone, p-dimethylaminopropiophenone, dichloroacetophenone, trichloroacetophenone, p-tert- Acetophenones such as butyl acetophenone; benzophenones such as benzophenone, 2-chlorobenzophenone, p, p'-bisdimethylaminobenzophenone; benzoin ethers such as benzyl, benzoin, benzoin methyl ether, benzoin isopropyl ether, benzoin isobutyl ether; 2 -(O-chlorophenyl) -4,5-phenylbiimidazole, 2- (o-chlorophenyl) -4,5-di (m-methoxyphenyl) biimidazole, 2- (o-fur Biphenyl compounds such as (rophenyl) -4,5-diphenylbiimidazole, 2- (o-methoxyphenyl) -4,5-diphenylbiimidazole, 2,4,5-triarylbiimidazole; 2-trichloromethyl -5-styryl-1,3,4-oxadiazole, 2-trichloromethyl-5- (p-cyanostyryl) -1,3,4-oxadiazole, 2-trichloromethyl-5- (p-methoxy) Halomethylthiazole compounds such as styryl) -1,3,4-oxadiazole; 2,4,6-tris (trichloromethyl) -1,3,5-triazine, 2-methyl-4,6-bis ( Trichloromethyl) -1,3,5-triazine, 2-phenyl-4,6-bis (trichloromethyl) -1,3,5-triazine, 2- (4-chloroph Nyl) -4,6-bis (trichloromethyl) -1,3,5-triazine, 2- (4-methoxyphenyl) -4,6-bis (trichloromethyl) -1,3,5-triazine, 2- (4-Methoxynaphthyl) -4,6-bis (trichloromethyl) -1,3,5-triazine, 2- (4-methoxystyryl) -4,6-bis (trichloromethyl) -1,3,5- Triazine, 2- (3,4,5-trimethoxystyryl) -4,6-bis (trichloromethyl) -1,3,5-triazine, 2- (4-methylthiostyryl) -4,6-bis (trichloro Halomethyl-S-triazine compounds such as methyl) -1,3,5-triazine; 1,2-octanedione, 1- [4- (phenylthio) phenyl] -2- (O-benzoyloxime), 1- (4-F Nylsulfanylphenyl) butane-1,2-dione-2-oxime-O-benzoate, 1- (4-methylsulfanylphenyl) butane-1,2-dione-2-oxime-O-acetate, 1- (4 O-acyloxime compounds such as -methylsulfanylphenyl) butan-1-one oxime-O-acetate; benzyldimethyl ketal, thioxanthone, 2-chlorothioxanthone, 2,4-diethylthioxanthone, 2-methylthioxanthone Sulfur compounds such as 2-ethylanthraquinone, octamethylanthraquinone, 1,2-benzanthraquinone and 2,3-diphenylanthraquinone; azobisisobutylnitrile, benzoyl peroxide, cumene peroxy Organic peroxides such as side; thiol compounds such as 2-mercaptobenzimidazole, 2-mercaptobenzoxazole and 2-mercaptobenzothiazole; tertiary amines such as triethanolamine and triethylamine. These photopolymerization initiators or sensitizers (C) can be used alone or in combination of two or more.

  Moreover, content of these photoinitiators or sensitizers (C) is 2-30 mass parts with respect to 100 mass parts of total amounts of the said alkali-soluble resin (A) and the said photopolymerizable monomer (B). It is preferable that it is the quantity which becomes, and it is more preferable that it is the quantity used as 5-20 mass parts. If the content of the photopolymerization initiator or sensitizer (C) is less than the lower limit, the photopolymerization rate tends to be slow and the sensitivity tends to decrease. On the other hand, if the content exceeds the upper limit, the sensitivity is too strong and the pattern is low. The line width becomes thicker than the pattern mask, and the line width faithful to the mask tends to be difficult to reproduce.

  Examples of the epoxy compound (D) include phenol novolac type epoxy resins, cresol novolac type epoxy resins, bisphenol A type epoxy resins, bisphenol F type epoxy resins, bisphenol S type epoxy resins, biphenyl type epoxy resins, and alicyclic epoxies. Examples thereof include epoxy resins such as resins; compounds having at least one epoxy group such as phenyl glycidyl ether, p-butylphenol glycidyl ether, triglycidyl isocyanurate, diglycidyl isocyanurate, allyl glycidyl ether, and glycidyl methacrylate. These epoxy compounds (D) can be used individually by 1 type or in combination of 2 or more types. By mix | blending these epoxy compounds (D), thermosetting or adhesiveness can be provided to the photosensitive resin used for this invention.

  Moreover, content of the said epoxy compound (D) is an amount used as 10-30 mass parts with respect to 100 mass parts of total amounts of the said alkali-soluble resin (A) and the said photopolymerizable monomer (B). The amount is preferably 10 to 20 parts by mass. If the content of the epoxy compound (D) is less than the lower limit, the moisture resistance and heat resistance of the coating film and the adhesiveness to the substrate tend to be lowered. The preservability of the functional resin tends to decrease.

  The method of applying the photosensitive resin used in the present invention described above is not particularly limited, and a method of laminating a film-like photosensitive resin, a method of coating a liquid photosensitive material, and arranging the photosensitive material by printing. A known method such as a method can be appropriately selected and employed.

  Further, the thickness of the photosensitive resin layer 20 is such that a spacer portion can be formed and a predetermined region where a semiconductor or MEMS is disposed can be sealed so that a space portion is formed. The thickness is not particularly limited, and the thickness can be adjusted by changing the design as appropriate according to the configuration of the hollow-sealed semiconductor device to be manufactured.

  Next, a part of the photosensitive resin layer is removed by photolithography for removing a portion not irradiated with light after irradiating a predetermined portion of the photosensitive resin layer, and the remaining portion of the photosensitive resin layer is formed. And the spacer part which has adhesiveness is formed (process (ii)).

  2 and 3 are schematic longitudinal sectional views showing an embodiment of a cover base material on which a spacer portion is formed. In the cover base material 10 shown in FIG. 2 or FIG. 3, the spacer part 30 is formed in the one surface. In addition, in the cover base material 10 shown in FIG. 3, the photosensitive resin of the part which overlaps with a dicing line is also removed so that a dicing line may not overlap with the spacer part 30 in process (iv) mentioned later. The cover base material 10 shown in FIG. 2 or FIG. 3 can be obtained by performing the step (ii) using the cover base material 10 on which the photosensitive resin layer 20 as shown in FIG. 1 is formed.

As a method of removing a part of the photosensitive resin layer for forming the spacer part 30 by photolithography, a portion that is not irradiated with light after being irradiated with light to a predetermined portion of the photosensitive resin layer may be removed. Any known method can be employed as appropriate. In addition, the amount of light irradiation when the photosensitive resin is irradiated with light in the photolithography varies depending on the ambient temperature and the thickness of the photosensitive resin layer, and is not particularly limited, but may be in the range of 50 to 1000 mJ / cm ^2. Preferably, it is in the range of 200 to 800 mJ / cm ² . If the amount of light irradiation is less than the lower limit, the light-irradiated portion tends to be soluble, whereas if it exceeds the upper limit, the adhesiveness and thermosetting property of the obtained spacer portion tend to decrease. In the present invention, the above-described photosensitive resin for forming the spacer portion is used, and the spacer itself has adhesiveness by adjusting the conditions for forming the spacer portion by photolithography. The part can be formed. The thickness and width of the spacer portion to be formed are not particularly limited, and the thickness and width can be adjusted by changing the design as appropriate according to the configuration of the hollow sealed semiconductor device to be manufactured.

  Next, the cover base material is pasted on the functional surface of the wafer on which the functional unit including a semiconductor or MEMS is formed via the spacer unit, and the spacer unit is cured to obtain a hollow sealed laminate ( Step (iii)).

  In step (iii), first, a wafer 50 on which a functional unit 40 including a semiconductor or MEMS is formed is prepared. FIG. 4 is a schematic longitudinal sectional view showing an embodiment of a wafer on which a functional unit including a semiconductor or MEMS is formed. In the wafer shown in FIG. 4, the functional unit 40 is disposed on one surface of the wafer 50, and the through electrode 60 is formed. Moreover, in FIG. 4, the dotted line L shows a dicing line. In the present invention, since the wafer 50 in which the functional part 40 is directly formed on one surface as shown in FIG. 4 can be used without using the wafer in which the concave part is formed, the hollow sealing is more efficiently performed. A stationary semiconductor device can be manufactured.

  In the functional unit 40, a semiconductor or a MEMS can be appropriately arranged according to the purpose of use of the hollow sealing semiconductor device to be manufactured. For example, a sensor unit of a semiconductor sensor, a driving unit of the MEMS, or the like can be arranged.

  In the present invention, it is preferable that a through electrode 60 is further formed on the wafer 50 as shown in FIG. As described above, since the through electrode 60 is formed on the wafer 50, the external terminal 70 can be provided on the surface of the wafer 50 where the functional part 40 is not disposed, Since there is no need to remove the terminal portion by dicing, the hollow sealed semiconductor device tends to be obtained more efficiently.

  Further, the through electrode 60 plays a role as an external terminal for extracting a signal to the outside in the obtained hollow sealed semiconductor device, and appropriately selects a known material used for a terminal portion of the semiconductor device. Can be formed. Further, in the wafer 50 shown in FIG. 4, the functional unit 40 and the through electrode 60 are connected by wiring or the like not shown.

  In the step (iii), next, the cover base material 10 is attached to the functional surface of the wafer 50 via the spacer portion 30, and the spacer portion 30 is cured by heat or light to obtain a hollow sealed laminate. .

  5 and 6 are each a schematic cross-sectional view showing an embodiment of a hollow sealed laminate before dicing. In such a hollow sealed laminate, the cover substrate 10 and the wafer 50 are laminated via the spacer portion 30. In addition, a space is formed in a region covered with the cover base material 10, the wafer 50, and the spacer unit 30, and the functional unit 40 and the through electrode 60 of the wafer 50 in the region are further disposed.

  The hollow sealed laminate shown in FIG. 5 or FIG. 6 uses the cover base 10 as shown in FIG. 2 or FIG. 3 and the wafer 50 as shown in FIG. Can be obtained at That is, on the functional surface of the wafer 50 as shown in FIG. 4, the cover base material 10 as shown in FIG. 2 or 3 is placed in a space covered by the cover base material 10, the wafer 50, and the spacer portion 30. 5 and FIG. 6 by attaching the spacer part 30 so that the functional part 40 and the through electrode 60 of the wafer 50 in that region are disposed, and curing the spacer part 30 with heat or light. A stationary laminate is obtained.

  Thus, the atmosphere when the spacer portion 30 is stuck and cured by heat or light is not particularly limited, and for example, a method of pressurizing and heating in a container evacuated to a predetermined vacuum degree may be adopted. it can. Also, the curing temperature is not particularly limited and is preferably in the range of 150 to 250 ° C, more preferably in the range of 180 to 230 ° C. When the curing temperature is less than the lower limit, the adhesiveness between the spacer portion and the wafer tends to be insufficient.On the other hand, when the upper limit is exceeded, damage to the functional unit including a semiconductor or MEMS increases. There is a tendency that the problem that the photosensitive resin layer is decomposed by heat tends to occur. Further, the curing pressure is not particularly limited, but is preferably in the range of 0.1 to 1.0 MPa, and more preferably in the range of 0.3 to 0.8 MPa. When the curing pressure is less than the lower limit, the adhesion between the spacer portion and the wafer tends to be insufficient. On the other hand, when the upper limit is exceeded, mechanical damage to the functional unit including the semiconductor or the MEMS increases. The mechanical damage to the photosensitive resin layer tends to increase.

  In the present invention, since the spacer portion 30 itself has an adhesive property as described above, the spacer portion is not formed on the functional surface of the wafer 50 without forming an adhesive layer on the wafer 50 or the spacer portion 30 as in the prior art. The cover base material 10 can be joined via 30.

  Next, the hollow sealing type laminated body is divided by dicing to obtain the hollow sealing type semiconductor device (step (iv)).

  FIG. 7 is a schematic longitudinal sectional view showing an embodiment of the hollow sealed semiconductor device after dicing. The hollow sealing semiconductor device after dicing shown in FIG. 7 is obtained by dividing the hollow sealing laminated body shown in FIG. FIG. 8 is a schematic longitudinal sectional view showing another embodiment of the hollow sealed semiconductor device after dicing. The hollow encapsulated semiconductor device after dicing shown in FIG. 8 is obtained by dividing the hollow encapsulated laminate shown in FIG. Thus, in the step (iv), when the cover base material 10 and the wafer 50 are diced as shown in FIG. 5, the spacer portion 30 may be diced simultaneously. As shown in FIG. When the wafer 50 is diced, dicing may be performed so that the dicing line L does not overlap the spacer portion 30. In the step (iv), a method for dividing the hollow sealing laminate by dicing is not particularly limited, and a known method can be appropriately employed.

  The manufacturing method of the hollow sealing type semiconductor device of the present invention is a method including the step (i), the step (ii), the step (iii) and the step (iv) described above. In such a method for manufacturing a hollow-sealed semiconductor device, since the spacer portion itself has adhesiveness, the spacer portion is not formed on the functional surface of the wafer without forming an adhesive layer on the wafer as in the prior art. The cover base material can be pasted and bonded via the. Therefore, in such a method for manufacturing a hollow-sealed semiconductor device, the process can be simplified, and the interface of the hollow-sealed semiconductor device increases due to the presence of the adhesive layer as in the prior art. Since there is no increase in defects due to connection due to this, it becomes possible to improve the reliability of the hollow-sealed semiconductor device.

  As described above, according to the present invention, a hollow sealed semiconductor device including a semiconductor or MEMS can be efficiently and reliably manufactured while sufficiently preventing contamination by a photosensitive resin, and an adhesive layer. Since the cover substrate can be attached and bonded to the functional surface of the wafer via the spacer portion without additional formation, the process can be simplified and the reliability of the device can be improved. It is possible to provide a method for manufacturing a sealed semiconductor device.

  Therefore, the method for manufacturing a hollow sealed semiconductor device of the present invention is very useful as a method for manufacturing various hollow sealed semiconductor devices including a semiconductor or MEMS.

It is a schematic longitudinal cross-sectional view which shows one Embodiment of the cover base material in which the photosensitive resin layer was formed. It is a schematic longitudinal cross-sectional view which shows one Embodiment of the cover base material in which the spacer part was formed. It is a schematic longitudinal cross-sectional view which shows other embodiment of the cover base material in which the spacer part was formed. It is a schematic longitudinal cross-sectional view which shows one Embodiment of the wafer in which the functional part provided with a semiconductor or MEMS was formed. It is a schematic sectional drawing which shows one Embodiment of the hollow sealing type laminated body before dicing. It is a schematic sectional drawing which shows other embodiment of the hollow sealing type laminated body before dicing. It is a schematic sectional drawing which shows one Embodiment of the hollow sealing type laminated body after dicing. It is a schematic sectional drawing which shows other embodiment of the hollow sealing type laminated body after dicing.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 10 ... Cover base material, 20 ... Photosensitive resin layer, 30 ... Spacer part, 40 ... Functional part, 50 ... Wafer, 60 ... Through electrode, 70 ... External terminal part, L ... Dicing line.

Claims (2)

A method for manufacturing a hollow-sealed semiconductor device comprising a semiconductor or MEMS,
A step of applying a photosensitive resin having adhesiveness and curability after light irradiation to the cover substrate, and forming a photosensitive resin layer on one surface of the cover substrate;
A part of the photosensitive resin layer is removed by photolithography for removing a portion that is not irradiated with light after irradiating a predetermined portion of the photosensitive resin layer, and consists of the remaining portion of the photosensitive resin layer and adhesiveness. Forming a spacer portion having
Attaching the cover base material to the functional surface of a wafer on which a functional unit including a semiconductor or MEMS is formed via the spacer unit, and curing the spacer unit to obtain a hollow sealed laminate;
Dividing the hollow sealed laminate by dicing to obtain the hollow sealed semiconductor device;
A method for manufacturing a hollow-sealed semiconductor device, comprising:   The method for manufacturing a hollow-sealed semiconductor device according to claim 1, wherein a through electrode is further formed on the wafer.

Images