JP2010008437A - Electro-optical device, manufacturing method thereof, and electronic apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To perform color display of good quality in a single-panel system, and to attain high definition, with respect to an electro-optical device , such as, liquid crystal device. <P>SOLUTION: The electro-optical device includes a pair of substrates, an electro-optical material (50), scan lines (3), data lines (6), pixel electrodes (9) arranged per pixel, a counter electrode (21), and a light-shielding film (11), at least partially defining aperture regions. The pixel electrodes and the light-shielding film are arranged so as to overlap partially, and a gap distance X between substrates and an overlap width Y satisfy the inequality: Y≥0.625-y (where y=-0.0208Δε<SP>2</SP>+0.5625Δε-3.0417 and Δε is the dielectric constant anisotropy of the electro-optical material). <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to an electro-optical device such as a liquid crystal device capable of color display, for example, in a single plate type, a manufacturing method thereof, and a technical field of an electronic apparatus such as a mobile phone including the electro-optical device.

  In a single-plate type liquid crystal device which is an example of this type of electro-optical device, one pixel is composed of three sub-pixels for RGB (that is, red, green, and blue), and different potentials are applied to adjacent pixels. The color image is displayed by supplying.

  Here, in the case of a vertical electric field driving method in which a liquid crystal is driven by an electric field generated in accordance with an image signal (hereinafter simply referred to as “longitudinal electric field”) between a pair of substrates sandwiching the liquid crystal, under the general demand for high definition. When the pitch of such subpixels is reduced, the potential difference between adjacent pixel electrodes to which image signals having different potentials are supplied (hereinafter simply referred to as “lateral electric field”) is relatively large with respect to the vertical electric field. turn into. Therefore, the adverse effect of the transverse electric field becomes obvious, and the alignment failure of the liquid crystal becomes a problem. This problem is particularly noticeable when image signals having different polarities are supplied between adjacent pixel electrodes by the inversion driving method. For this reason, a technique for suppressing the lateral electric field by changing the shape of the pixel electrode in accordance with the alignment state of the liquid crystal has been proposed (see Patent Document 1).

JP 2008-58690 A

  The inventor of the present application knows that according to the background art described above, for an electro-optical device using a specific type of electro-optical material, the generation of a lateral electric field is suppressed to a greater or lesser extent by changing the pixel electrode. There is a possibility.

  However, according to the background art, since it is necessary to determine the shape of the pixel electrode based on the alignment state of the liquid crystal when no voltage is applied, the shape of the pixel electrode becomes complicated depending on the type of liquid crystal used. There is a problem. In particular, in a liquid crystal device in which the pixel pitch is reduced under the demand for higher definition, it is technically difficult to uniformly form pixel electrodes having a complicated shape over the entire image display region. In particular, in the case of a liquid crystal device that performs color display with a single plate type, this problem becomes serious because the pixel pitch needs to be reduced due to its nature.

  The present invention has been made, for example, in view of the above-described problems, and is capable of performing high-quality color display with a single plate type, and is suitable for high definition, and a manufacturing method thereof, and It is an object to provide an electronic apparatus including such an electro-optical device.

In order to solve the above problems, a first electro-optical device according to the present invention has a pair of substrates, an electro-optical material sandwiched between the pair of substrates, and a wiring that crosses one of the pair of substrates. A plurality of scanning lines and a plurality of data lines arranged on a side facing the electro-optical material in one of the pair of substrates for each pixel corresponding to an intersection of the plurality of data lines and the plurality of scanning lines. Provided on at least one of the plurality of pixel electrodes, the other electrode of the pair of substrates, the counter electrode disposed to face the plurality of pixel electrodes via the electro-optic material, and the pair of substrates. A light shielding film that at least partially defines an opening region of the pixel when viewed in plan on the pair of substrates, and the pixel electrode and the light shielding film are viewed in plan on the pair of substrates. The pixel electrode and the light shielding Superimposing width Y is inequality but so as to overlap partially, are disposed, the pair of substrates gap distance X between substrates, and wherein the pixel electrode and the light-shielding film overlaps partially
Y ≧ 0.625X−y
However, y = −0.0208Δε ² + 0.5625Δε−3.0417
Δε = the dielectric anisotropy of the electro-optic material is satisfied.

  According to the first electro-optical device of the present invention, when various signals such as a power signal, a data signal, and a control signal are input and output during operation, the built-in drive circuit built on the substrate or externally attached. By the driving circuit, the scanning signal is sequentially supplied to a plurality of scanning lines formed along the first direction (that is, typically the horizontal direction or the X direction). In parallel with this, RGB (that is, red, green, and blue) separate images for a plurality of data lines in which the image signal is formed along the second direction (that is, typically the vertical direction or the Y direction). Signals are supplied simultaneously or sequentially. As a result, the vertical electric field generated between the pixel electrode formed for each pixel and the counter electrode formed on the opposing substrate changes the orientation state of the electro-optic material sandwiched between the substrates, and transmits light in each pixel. The rate can be controlled. By controlling the orientation state of the electro-optic material in this way, in the first electro-optic device, for example, an electro-optic operation such as a liquid crystal display is performed by an active matrix method using vertical electric field driving.

  On the substrate, a light shielding film is formed so as to define an area occupied by the pixel serving as an opening area, and a pixel electrode is disposed so as to correspond to each pixel. Each pixel electrode is formed larger than the area of the corresponding opening region. Therefore, when viewed from above the substrate, the pixel electrode overlaps with the light shielding film defining the opening region. Note that, when viewed in plan on the substrate, the overlapping region is hereinafter referred to as “superimposing region” as appropriate, and the overlapping width is hereinafter referred to as “superimposing region width” as appropriate. In other words, the “width of the overlapping region” refers to a certain direction in the overlapping region when the overlapping region partially exists in the pixel electrode or the light shielding film along a certain direction when viewed in plan on the substrate. It means the width in the intersecting direction.

  According to the study of the present inventor, in the case where each pixel is driven by a vertical electric field, a pixel electrode or a light shielding film is formed so that the width of the overlapping region satisfies the above inequality, so that adjacent pixels are It has been found that the adverse effect of the transverse electric field that occurs in can be significantly suppressed. This is considered to be due to the following reason. That is, when the interval between adjacent pixel electrodes is first narrowed to reduce the pixel pitch, the lateral electric field generated between adjacent pixel electrodes is increased in a manner generally inversely proportional to the interval. Therefore, if no countermeasure is taken, light leakage due to the malfunction of the electro-optical material (typically, liquid crystal alignment disorder) is induced between pixels. Conversely, if the light shielding film is widened and the width of the overlapping region is widened to prevent such light leakage, the important light utilization efficiency is lowered and the display becomes dark. . However, even if the lateral electric field is increased in this way, if the above inequality is satisfied, the vertical electric field generated between each pixel electrode and the counter electrode is increased in accordance with the increase in the lateral electric field. . Alternatively, the vertical electric field is increased at a higher rate than the rate at which the horizontal electric field increases as the pixel pitch is reduced. Therefore, even if the pixel pitch is reduced, the strength of the vertical electric field relative to the strength of the horizontal electric field can be maintained to such an extent that light leakage does not occur in the pixels. In addition, if the above inequality is satisfied, a light-shielding film that overlaps in the superimposing region for a malfunctioning portion of the electro-optic material in the vicinity of the superimposing region (typically, a liquid crystal domain generated in the vicinity of the superimposing region by a lateral electric field) In practice, it is considered that light leaking from the malfunctioning portion can be prevented from being mixed into the display light. In other words, if the inter-substrate gap is reduced, it may be said that the width of the overlapping region is small.

  Therefore, in the present invention, the width of the overlapping region is formed so as to satisfy the above inequality. As a result, an electric field state and a light shielding state that do not reveal the adverse effects due to the lateral electric field are constructed, particularly in the vicinity of the overlapping region. Note that Δε takes a positive value when the electro-optical device is driven by a typical TN driving method.

  By changing the shape of the pixel electrode as described above, the adverse effect of the horizontal electric field can be suppressed or almost eliminated without complicating the shape of the pixel electrode, as compared with the background art that reduces the influence of the horizontal electric field. it can. As a result, high-definition display corresponding to the finer pixel pitch can be executed with a single plate method relatively easily.

  In one aspect of the first electro-optical device of the present invention, the opening region has a long side direction that coincides with one of the first direction along the scanning line and the second direction along the data line. It has a planar shape, and the inter-substrate gap distance X and the overlapping width Y satisfy the inequality for a portion where the pixel electrode and the light shielding film partially overlap along the one direction.

  According to this aspect, the opening region is formed as a rectangular shape having the first or second direction as the long side direction or the longitudinal direction. In this case, the overlapping region is provided so as to satisfy the inequality in either the long side direction or the short side direction. In other words, if the portion along one of the first direction and the second direction in the overlapping region formed in the opening region is formed so as to satisfy the above inequality, the influence of lateral electrolysis can be suppressed to some extent. It is. In particular, when the overlapping region is formed so as to satisfy the inequality along the long side direction, the influence of the lateral electric field can be reduced more efficiently than when formed in the short side direction.

  In particular, in the inversion driving method in which the polarity of the image signal is inverted for each line along the scanning line or the data line, such as 1H inversion driving or 1S inversion driving, the direction in which the horizontal electric field is likely to be generated is any one of the directions. Direction. Therefore, if the width of the overlapping region in the direction in which the transverse electric field is likely to be generated satisfies the above inequality, it is practically advantageous because the influence of the lateral electrolysis can be suppressed very efficiently. In this case, even if the other direction is formed so as not to satisfy the inequality, there is no actual harm because the influence of the lateral electrolysis is originally small. Therefore, the degree of freedom in design in the planar layout can be significantly increased.

  Alternatively, in another aspect of the first electro-optical device of the present invention, the inter-substrate gap distance X and the overlap width Y are both in the first direction along the scanning line and in the second direction along the data line. Satisfies the inequality.

  According to this aspect, since all of the formed overlapping regions satisfy the inequality, the influence of the lateral electric field generated between the pixels can be most suppressed or eliminated.

  In particular, for example, field inversion driving, frame inversion driving, area scanning inversion driving, and the like are inversion driving methods in which the adverse effect of the transverse electric field is concerned in any direction. Thus, the above inequality is satisfied in both directions. For example, the adverse effect of the transverse electric field can be suppressed in both directions, which is advantageous in practice.

  In another aspect of the first electro-optical device of the present invention, at least one of the data line and the scanning line is made of a light-shielding material, and in addition to the light-shielding film, the opening region is at least partially formed. Stipulate.

  According to this aspect, each opening region is defined in a superimposed or cooperative manner by the data line or scanning line made of a conductive light shielding material such as aluminum and the light shielding film. That is, as viewed in a plan view, a data line or a scanning line that functions as a light shielding film and the light shielding film may be formed in the same area in the non-opening area of each pixel. Alternatively, a non-opening region of each pixel may be constructed by combining a region where a data line or a scanning line functioning as a light shielding film is formed with a region where the light shielding film is formed. As a result, the light shielding property of the light shielding film provided on the substrate can be enhanced by these wirings, and a high-quality electro-optical device having high contrast can be obtained by reducing light leakage from the non-opening region. Can be realized. For example, a non-opening region along one of the first and second directions is shielded by a stripe-shaped data line, and a non-opening region along the other of the first and second directions is striped. May be shielded from light. In this case, a lattice-shaped light shielding film is constructed by both of them.

  In another aspect of the first electro-optical device of the present invention, the plurality of pixel electrodes may be sub-pixels corresponding to any one of R (red), G (green), and B (blue) for each pixel. The light shielding film at least partially defines an opening region of the sub-pixel, and the sub-pixel is disposed along the first direction and the second direction.

  According to this aspect, it is possible to perform color display or full color display by individually driving each sub-pixel and adjusting the amount of light for each RGB.

  In particular, according to the present invention, by providing the width of the overlapping region formed by the pixel electrode and the light shielding film so as to satisfy the above formula, not only light leakage between subpixels but also between subpixels of different colors occurs. Color mixing can be reduced at the same time. Therefore, it is possible to realize a single-plate electro-optical device that has very little color mixing and is capable of color display or full color display excellent in color expression.

  Typically, each of the sub-pixels is arranged in a line along the second direction, and is aligned with a column corresponding to R, a column corresponding to G, and a column corresponding to B; Each pixel may be arranged so that one pixel is constituted by three sub-pixels adjacent in the first direction. That is, the sub-pixels may be arranged in a “stripe arrangement”. When arranged in this manner, the pixel pitch can be reduced, so that it is possible to provide an electro-optical device suitable for a liquid crystal device capable of color display with a single plate type in which high-definition image display is desired. Note that the arrangement of the color filters can be applied to the present invention even if the arrangement is a delta arrangement, a triangle arrangement, or the like.

In order to solve the above-described problem, the second electro-optical device of the present invention has a pair of substrates, an electro-optical material sandwiched between the pair of substrates, and wiring so as to intersect with one of the pair of substrates. A plurality of scanning lines and a plurality of data lines arranged on a side facing the electro-optical material in one of the pair of substrates for each pixel corresponding to an intersection of the plurality of data lines and the plurality of scanning lines. A plurality of pixel electrodes and a counter electrode disposed on the other of the pair of substrates so as to face the plurality of pixel electrodes with the electro-optical material interposed therebetween, and the data lines and the scanning lines At least one of the wirings is made of a light-shielding material, and at least partially defines an opening region of the pixel when viewed in plan on the pair of substrates, and the pixel electrode and the at least one wiring Is the pair of When viewed in plan on the plate, the pixel electrode and the at least one wiring are arranged so as to partially overlap each other, the inter-substrate gap distance X between the pair of substrates, and the pixel electrode and the The overlapping width Y where at least one of the wirings partially overlaps is an inequality
Y ≧ 0.625X−y
However, y = −0.0208Δε ² + 0.5625Δε−3.0417
Δε = the dielectric anisotropy of the electro-optic material is satisfied.

  According to the second electro-optical device of the present invention, the data line and the scanning line are made of a light-shielding material, so that the function of the light-shielding film included in the above-described first electro-optical device according to the present invention is formed on these wirings Can be held concurrently. As a result, a laminated structure such as wiring to be formed on the substrate can be simplified, and high-quality image display can be realized with an electro-optical device having a simpler structure. In addition, since the inequality is satisfied with respect to the edge of the wiring functioning as a light shielding film and the edge of the pixel electrode in this way, the same effect as the first electro-optical device according to the present invention described above can be obtained.

In order to solve the above problems, a first electro-optical device manufacturing method of the present invention includes a pair of substrates, an electro-optical material sandwiched between the pair of substrates, and a phase cross between one of the pair of substrates. A plurality of scanning lines and a plurality of data lines wired in such a manner as to correspond to the intersection of the plurality of data lines and the plurality of scanning lines on the side facing the electro-optical material in one of the pair of substrates. A plurality of pixel electrodes arranged for each pixel; a counter electrode arranged to face the other of the plurality of pixel electrodes with the electro-optic material on the other of the pair of substrates; and at least one of the pair of substrates An electro-optical device manufacturing method for manufacturing an electro-optical device provided on one side and including a light-shielding film that at least partially defines an opening region of the pixel when viewed in plan on the pair of substrates, The pixel electrode and the A step of disposing the optical film so that the pixel electrode and the light-shielding film partially overlap each other when viewed in plan on the pair of substrates, the inter-substrate gap distance X between the pair of substrates, In addition, the overlapping width Y in which the pixel electrode and the light shielding film partially overlap is an inequality.
Y ≧ 0.625X−y
However, y = −0.0208Δε ² + 0.5625Δε−3.0417
Δε = the dielectric anisotropy of the electro-optic material is satisfied.

  According to the first method for manufacturing an electro-optical device of the present invention, the first electro-optical device according to the present invention described above can be manufactured by arranging the light shielding film and the pixel electrode so as to satisfy the inequality.

In order to solve the above problems, a second electro-optical device manufacturing method according to the present invention includes a pair of substrates, an electro-optical material sandwiched between the pair of substrates, and a phase cross between one of the pair of substrates. A plurality of scanning lines and a plurality of data lines wired in such a manner as to correspond to the intersection of the plurality of data lines and the plurality of scanning lines on the side facing the electro-optical material in one of the pair of substrates. A plurality of pixel electrodes arranged for each pixel; and a counter electrode disposed on the other of the pair of substrates so as to face the plurality of pixel electrodes with the electro-optical material interposed therebetween, and the data line And at least one wiring of the scanning line is made of a light-shielding material, and manufactures an electro-optical device that at least partially defines an opening region of the pixel when viewed in plan on the pair of substrates. Of electro-optical devices A method of disposing the pixel electrode and the at least one wiring so that the pixel electrode and the at least one wiring partially overlap each other when viewed in plan on the pair of substrates. An inter-substrate gap distance X between the pair of substrates and an overlap width Y in which the pixel electrode and the at least one wiring partly overlap are inequalities
Y ≧ 0.625X−y
However, y = −0.0208Δε ² + 0.5625Δε−3.0417
Δε = the dielectric anisotropy of the electro-optic material is satisfied.

  According to the second electro-optical device manufacturing method of the present invention, the above-described second electro-optical device according to the present invention is manufactured by arranging the wiring and the pixel electrode functioning as a light shielding film so as to satisfy the above inequality. it can.

  In order to solve the above problems, an electronic apparatus according to the present invention includes the above-described electro-optical device according to the present invention (including various aspects thereof).

  According to the electronic apparatus of the present invention, since it includes the electro-optical device of the present invention described above, a projection display device, a television, a mobile phone, an electronic notebook, a word processor, capable of performing high-quality image display, Various electronic devices such as a viewfinder type or a monitor direct-view type video tape recorder, a workstation, a videophone, a POS terminal, and a touch panel can be realized.

  The operation and other advantages of the present invention will become apparent from the best mode for carrying out the invention described below.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following embodiments, a driving circuit built-in type TFT active matrix driving type liquid crystal device, which is an example of the electro-optical device of the present invention, is taken as an example.

<1-1: Electro-optical device>
First, a specific configuration of the liquid crystal device according to the present embodiment will be described with reference to FIGS. 1 and 2. FIG. 1 is a plan view showing the configuration of the liquid crystal device 100 according to this embodiment, and FIG. 2 is a cross-sectional view taken along the line HH ′ of FIG.

  1 and 2, in the liquid crystal device 100 according to the present embodiment, the TFT array substrate 10 and the counter substrate 20 are arranged to face each other. The TFT array substrate 10 is, for example, a transparent substrate such as a quartz substrate or a glass substrate, a silicon substrate, or the like. The counter substrate 20 is a transparent substrate such as a quartz substrate or a glass substrate. Between the TFT array substrate 10 and the counter substrate 20, a liquid crystal 50, which is an example of the “electro-optical material” according to the present invention, is sealed. The liquid crystal 50 is made of, for example, a liquid crystal in which one or several types of nematic liquid crystals are mixed, and takes a predetermined alignment state between the pair of alignment films. The TFT array substrate 10 and the counter substrate 20 are bonded to each other by a sealing material 52 provided in a sealing region located around the image display region 10a, which is a display region in which a plurality of pixel electrodes are provided.

  The sealing material 52 is made of, for example, an ultraviolet curable resin, a thermosetting resin, or the like for bonding the two substrates, and is applied on the TFT array substrate 10 in the manufacturing process and then cured by ultraviolet irradiation, heating, or the like. It is. In the sealing material 52, a gap material such as glass fiber or glass bead is dispersed for setting the distance between the TFT array substrate 10 and the counter substrate 20 (that is, the inter-substrate gap) to a predetermined value. Note that the gap material may be arranged in the image display region 10a or a peripheral region located around the image display region 10a in addition to or instead of the material mixed in the seal material 52.

  A light-shielding frame light-shielding film 53 that defines the frame area of the image display area 10a is provided on the counter substrate 20 side in parallel with the inside of the seal area where the sealing material 52 is disposed. However, part or all of the frame light shielding film 53 may be provided as a built-in light shielding film on the TFT array substrate 10 side. There is a peripheral area located around the image display area 10a. In other words, particularly in the present embodiment, when viewed from the center of the TFT array substrate 10, the distance from the frame light shielding film 53 is defined as the peripheral region.

A data line driving circuit 101 and an external circuit connection terminal 102 are provided along one side of the TFT array substrate 10 in a region located outside the sealing region in which the sealing material 52 is disposed in the peripheral region. The sampling circuit 7 is provided so as to be covered with the frame light shielding film 53 on the inner side of the seal region along the one side. The scanning line driving circuit 104 is provided along two sides adjacent to the one side so as to be covered with the frame light shielding film 53.

  On the TFT array substrate 10, vertical conduction terminals 106 for connecting the two substrates with a vertical conduction material are disposed in regions facing the four corner portions of the counter substrate 20. Thus, electrical conduction can be established between the TFT array substrate 10 and the counter substrate 20.

  On the TFT array substrate 10, lead wirings are formed for electrically connecting the external circuit connection terminals 102 to the data line driving circuit 101, the scanning line driving circuit 104, the vertical conduction terminal 106, and the like.

  In FIG. 2, on the TFT array substrate 10, a laminated structure in which sub-pixel switching TFTs as drive elements, wirings such as scanning lines and data lines are formed is formed. On this laminated structure, pixel electrodes 9 made of a transparent material such as ITO (Indium Tin Oxide) are formed in an island shape with a predetermined pattern for each pixel. Further, although not shown in FIG. 2, an alignment film is formed on the uppermost layer portion.

  1 and FIG. 2, on the TFT array substrate 10, a plurality of data lines are precharged at a predetermined voltage level in addition to the drive circuits such as the data line drive circuit 101 and the scan line drive circuit 104. A precharge circuit for supplying a signal prior to an image signal, an inspection circuit for inspecting quality, defects, and the like of the liquid crystal device during manufacturing or at the time of shipment may be formed.

On the other hand, on the counter substrate 20 disposed on the surface facing the TFT array substrate 10, a color filter 26 is formed with a predetermined thickness so as to oppose each pixel electrode 9. In the present embodiment, the pixel electrode 9, the sub-pixel switching TFT, the color filter 26, and the like described above are provided for each sub-pixel. Each sub-pixel is provided with a red (R) color filter, a green (G) color filter, and a blue (B) color filter. The red color filter is a color filter that allows only red light (ie, light having a wavelength of, for example, 625 to 740 nm) to pass therethrough, and the green color filter is that of green light (ie, having a wavelength of, for example, 500 to 565 nm). The blue color filter is a color filter that allows only blue light (that is, light having a wavelength of, for example, 450 to 485 nm) to pass therethrough.
<1-2: Configuration in the peripheral region of the sub-pixel>
Next, the electrical configuration of the liquid crystal device according to the present embodiment will be described with reference to FIG. FIG. 3 is a block diagram showing an electrical configuration of the liquid crystal device 100 according to the present embodiment.

  As shown in FIG. 3, the TFT array substrate 10 of the liquid crystal device 100 includes data lines 6 (that is, data lines 6R, 6G, and 6B) and scanning lines 3 that are wired vertically and horizontally in the image display region 10a. Sub-pixels 70 are formed corresponding to these intersections or intersections. Each subpixel 70 includes a pixel electrode 9 of the liquid crystal element 118, a TFT 30 for switching control of the pixel electrode 9, and a storage capacitor 119. In this embodiment, the total number of scanning lines 3 is assumed to be m (where m is a natural number of 2 or more), and the total number of data lines 6 is assumed to be n (where n is a natural number of 2 or more). .

  The color pixel 80 includes three sub pixels 70 (that is, sub pixels 70R, 70G, and 70B) that are adjacent to each other in the direction in which the scanning line 3 extends (that is, the X direction). FIG. 4 is a schematic diagram showing a specific arrangement of the sub-pixels 70 in the image display area 10a. One color pixel 80 includes three sub-pixels, a sub-pixel 70R corresponding to red, a sub-pixel 70G corresponding to green, and a sub-pixel 70B corresponding to blue. The respective color pixels 80 are arranged in a matrix along the X direction and the Y direction in the entire image display region 10a.

  Furthermore, each sub-pixel 70 is formed so that the side along the Y direction is longer than the side along the X direction, and has a so-called rectangular shape. Thus, by reducing the area of one sub-pixel, the pixel pitch can be reduced, and a single-plate type high-definition or high-quality color image can be displayed.

  On the counter substrate 20 side, a red color filter 26 is provided so as to face the pixel electrode 9 of the sub pixel 70R, and a green color filter 26 is provided so as to face the pixel electrode 9 of the sub pixel 70G. The blue color filter 26 is provided so as to face the pixel electrode 9 of the sub-pixel 70B. These color filters 26 also have a rectangular shape in accordance with the shape of the corresponding sub-pixel 70.

  The red, green and blue color filters 26 provided on the counter substrate 20 are arranged in a line along the direction in which the data lines 6 extend (that is, the Y direction). One data line 6 is electrically connected to a sub-pixel 70 of any one of red, green and blue. That is, the red sub-pixel 70R is electrically connected to the data line 6R, the green sub-pixel 70G is electrically connected to the data line 6G, and the blue sub-pixel 70B is connected to the data line 6B. Electrically connected.

  Returning to FIG. 3 again, the liquid crystal device 100 includes a scanning line driving circuit 104, a data line driving circuit 101, a sampling circuit 71, and an image signal line 500 in the peripheral region on the TFT array substrate 10.

  The scanning line driving circuit 104 is supplied with a Y clock signal CLY, an inverted Y clock signal CLYinv, and a Y start pulse DY from an external circuit via an external circuit connection terminal 102 (see FIG. 1). When the Y start pulse DY is input, the scanning line driving circuit 104 sequentially generates and outputs the scanning signals Y1,..., Ym at a timing based on the Y clock signal CLY and the inverted Y clock signal CLYinv.

  The data line driving circuit 101 is supplied with an X clock signal CLX, an inverted X clock signal CLXinv, and an X start pulse DX from an external circuit via an external circuit connection terminal 102 (see FIG. 1). When the X start pulse DX is input, the data line driving circuit 101 sequentially generates and outputs sampling signals S1,..., Sn at a timing based on the X clock signal CLX and the inverted X clock signal XCLXinv.

  The sampling circuit 71 includes a plurality of sampling transistors 71 provided for each data line 6.

  In this embodiment, twelve image signal lines 500 are provided. Image signals VID <b> 1 to VID <b> 12 in which one image signal is serial-parallel expanded (or phase expanded) into 12 phases by an external image processing circuit are supplied to the electro-optical device 100 through 12 image signal lines 500. The Then, the n data lines 6 are sequentially driven for each data line group including 12 data lines 6 corresponding to the number of image signal lines 500 as a group, as will be described below.

  A sampling signal Si (i = 1, 2,..., N) is sequentially supplied from the data line driving circuit 101 to each sampling transistor 71 corresponding to the data line group, and each sampling transistor 71 is in response to the sampling signal Si. An on state (ie, a conducting state) and an off state (ie, a non-conducting state) are switched. The image signals VID1 to VID12 from the 12 image signal lines 500 are simultaneously supplied to the data lines 6 belonging to the data line group simultaneously and sequentially for each data line group through the sampling transistor 71 which is turned on. As a result, the data lines 6 belonging to one data line group are driven simultaneously. Therefore, in the present embodiment, the twelve data lines 6 are driven for each data line group, so that the drive frequency can be suppressed.

  If attention is paid to the configuration of one sub-pixel 70 in FIG. 3, the data line 6 to which the image signal VIDk (where k = 1, 2, 3,..., 12) is supplied to the source electrode of the TFT 30 is shown. Is electrically connected to the gate electrode of the TFT 30 while the scanning line 3 to which the scanning signal Yj (j = 1, 2, 3,..., M) is supplied is electrically connected. In addition, the pixel electrode 9 of the liquid crystal element 118 is electrically connected to the drain electrode of the TFT 30. Here, in each sub-pixel 70, the liquid crystal element 118 has the liquid crystal 50 sandwiched between the pixel electrode 9 and the counter electrode 21.

  Each scanning line 3 is selected line-sequentially by the scanning signals Y1,..., Ym output from the scanning line driving circuit 104. In the subpixel 70 corresponding to the selected scanning line 3, when the scanning signal Yj is supplied to the TFT 30, the TFT 30 is turned on, and the subpixel 70 is selected. An image signal VIDk is supplied from the data line 6 to the pixel electrode 9 of the liquid crystal element 118 at a predetermined timing by closing the switch of the TFT 30 for a certain period. As a result, an applied voltage defined by the potentials of the pixel electrode 9 and the counter electrode 21 is applied to the liquid crystal element 118. The liquid crystal modulates light and enables gradation display by changing the orientation and order of the molecular assembly depending on the applied voltage level.

  The liquid crystal constituting the liquid crystal 50 (see FIG. 2) modulates light and allows gradation display by changing the orientation and order of the molecular assembly depending on the applied voltage level. Particularly in the present embodiment, a normally white mode is employed, and the transmittance with respect to incident light is reduced according to the voltage applied in units of pixels.

  Next, a specific configuration of the sub-pixel 70 in the image display area 10a will be described with reference to FIGS.

  FIG. 5 is a plan view of a plurality of adjacent sub-pixels 70 formed on the TFT array substrate 10. On the TFT array substrate 10, data lines 6 and scanning lines 3 are provided in a matrix in the X direction and the Y direction.

  Particularly in the present embodiment, a black matrix 27 constituting an example of the “light-shielding film” according to the present invention is formed on the counter substrate 20 in the non-opening region of each sub-pixel. The black matrix 27 is provided in a lattice shape so as to partition the color filter 26, and defines an opening area of each sub-pixel. In the present embodiment, the light shielding film 11 constituting an example of the “light shielding film” according to the present invention is formed on the TFT array substrate 10. Furthermore, the data line 6 also constitutes an example of the “light-shielding film” according to the present invention.

  That is, in the present embodiment, a grid-like light shielding region is constructed by the black matrix 27, the light shielding film 11, and the data line 6 in a redundant or cooperative manner, that is, the opening region of each subpixel is defined. Yes. The light shielding film 11 returns light from the back side of the TFT array substrate 10 (lower side in FIG. 2 or FIG. 7) (that is, incident light is reflected by the back surface of the TFT array substrate, or other light is emitted by a three-plate projector. In order to prevent light from penetrating the synthesis optical system from the liquid crystal light valve from entering the TFT, it is formed on the TFT array substrate 10. Such a light shielding film 11 may also serve as a scanning line. Thus, since the “light-shielding film” according to the present invention is composed of three separate layers, for example, the black matrix may be in a stripe shape instead of a lattice shape, and the light-shielding film 11 is not in a lattice shape but in a stripe shape. But you can. Alternatively, each of the black matrix 27 and the light shielding film 11 may have a lattice shape, and either of them may be wide or narrow. Since there is no displacement of the substrate bonding, the light shielding film 11 having a small positional displacement with respect to the pixel electrode has a role of defining the opening area of each sub-pixel, and the black matrix 27 has an auxiliary role. This is advantageous in increasing the accuracy of the width of the overlapping region described later. In this sense, for example, in relation to the inversion driving method, the light shielding film 11 has a role of defining the opening region of each sub-pixel in a direction in which a horizontal electric field is relatively likely to be generated, and the horizontal electric field is generated relatively. For the difficult direction, it is advantageous to make the black matrix 27 have the role of defining the opening area of each sub-pixel.

  In the present embodiment, the wiring constituting the scanning line 3 may be formed of a transparent material. Further, if the “light-shielding film” according to the present invention is constituted by the two of the black matrix 27 and the light-shielding film 11, the data line 6 may also be formed of a transparent material. However, from the viewpoint of reducing the wiring resistance, the data line 6 is formed of a conductive metal such as aluminum.

  Particularly in the present embodiment, the data line 6 is formed wider than the light shielding film 11 and defines an opening region between the sub-pixels 70. As will be described later, the data line 6 is formed to have a width that is the same as or slightly larger than the width of the black matrix 27 formed on the counter substrate 20.

  Thus, in the present embodiment, the opening area is defined by the data line 6. In each opening region, a plurality of transparent pixel electrodes 9 (outlined by dotted line portions 9 ′) are provided. In particular, the pixel electrode 9 is formed so as to have an overlapping portion at the edge thereof when viewed in plan with the data line 6. That is, the pixel electrode 9 and the data line 6 that defines the opening area are arranged so as to have an overlapping area when viewed in plan, as will be described in detail below.

  FIG. 6 is a schematic diagram schematically showing the positional relationship between the “light-shielding film” and the pixel electrode 9 according to the present invention. The light shielding film 11 is formed in a lattice shape, and the pixel electrode 9 is formed thereon. The outer edge 9 ′ of the pixel electrode 9 is located on the light shielding film and is formed to have the overlapping region 12 (that is, 12x and 12y). Here, the overlapping area 12x is an overlapping area formed at an edge portion along the X direction of the opening area. The overlapping area 12y is an overlapping area formed at the edge of the opening area along the Y direction. The overlapping region 12 exists in the X direction and the Y direction so as to surround the edge portion of the opening region defined by the light shielding film 11.

  Next, the hierarchical structure of the sub-pixel 70 formed on the TFT array substrate 10 will be described in detail with reference to FIG. FIG. 7 is a cross-sectional view taken along the line V-V ′ of FIG. 5.

  A light shielding film 11 is formed on the TFT array substrate 10, and the light shielding film 11 is covered with a base insulating film 14. The light shielding film 11 is formed in a matrix on the TFT array substrate 10 and prevents return light from the back side of the TFT array substrate 10 from entering the TFT (not shown in FIG. 7). The light shielding film 11 is formed narrower than the black matrix 27 formed on the counter substrate 20. Therefore, the light shielding film 11 and the black matrix 27 define the opening area of each sub-pixel in a superimposed manner or in cooperation. The light shielding film 11 includes, for example, a single metal, an alloy, a metal silicide, a polysilicide, or a laminate of at least one of refractory metals such as Ti, Cr, W, Ta, Mo, and Pd. Etc.

  The data line 6 is formed using an interlayer insulating film 14 whose upper surface is planarized as a base. The data line 6 is made of, for example, an Al (aluminum) -containing material such as Al—Si—Cu or Al—Cu, Al alone, or a multilayer film including an Al layer and a TiN layer.

  A pixel electrode 9 is provided in an island shape on the data line 6 with an interlayer insulating film 15 interposed therebetween, and an alignment film 16 that has been subjected to a predetermined alignment process such as a rubbing process is provided above the pixel electrode 9. ing. The pixel electrode 9 is made of a transparent conductive film such as an ITO (Indium Tin Oxide) film, and the alignment film 16 is made of an organic film such as a polyimide film.

  A color filter 26, a black matrix 27, a planarizing film 28, a counter electrode 21, and an alignment film 23 are provided on the counter substrate 20 (on the lower side of the counter substrate 20 in FIG. 7) via a base insulating film 22. Yes. In particular, the black matrix defines an opening area together with the data lines 6 formed on the TFT array substrate 10.

  The pixel electrode 9 and the light shielding film 11 formed on the TFT array substrate 10 form an overlapping region 12. A liquid crystal 50 is formed between the TFT array substrate 10 and the counter substrate 20, and takes a predetermined alignment state by the alignment films 16 and 23 in a state where an electric field from the pixel electrode 9 is not applied. Here, the TFT array substrate 10 and the counter substrate 20 are arranged apart from each other by a certain distance due to the presence of the gap material. This distance is defined as the inter-substrate gap distance X [μm].

On the TFT array substrate 10, the pixel electrode 9 is formed for each sub-pixel 70 (in FIG. 7, every 70B and 70C). Here, if the distance between adjacent pixel electrodes 9 is a [μm], and the width of the black matrix 27 and the data line 6 defining the opening region is b [μm], the width of the overlapping region 12 (that is, the overlapping width). ) Y [μm] can be expressed by the following formula: Y = (ba) / 2 (1)

  FIG. 8 shows the dielectric anisotropy Δε of the liquid crystal 50, the inter-substrate gap distance X, the distance a between the pixel electrodes 9, the data line width b, and the overlapping width Y in the liquid crystal device actually manufactured by the inventors. Each value is shown. Here, the liquid crystal 50 is a TN liquid crystal, and Δε takes a positive value.

  It has been found by the inventor's research that if the dimensions of the liquid crystal device are defined as shown in FIG. 8, the influence of the transverse electric field generated between the sub-pixels can be suppressed.

Here, based on the values shown in FIG. 8, FIG. 9 shows the result of plotting the inter-substrate gap distance X on the horizontal axis and the overlapping width Y on the vertical axis. In FIG. 9, two data points are plotted for each dielectric anisotropy Δε of the liquid crystal 50. According to the experiment by the present inventor, it has been found that there is a direct proportional relationship between the inter-substrate gap distance X and the overlap width Y. Therefore, as shown in FIG. 9, two data points in each dielectric anisotropy Δε can be approximated by straight lines. This approximate straight line is expressed as
Y = 0.625X-y
Can be expressed as Further, in the experiments by the inventors of the present application, it has been found that the influence of the lateral electric field between the sub-pixels can be suppressed if the overlapping width Y is formed larger than the value obtained from this equation. That is, the overlapping width Y is expressed by the following equation:
Y ≧ 0.625X−y (2) If the width Y of the overlapping region is set so as to satisfy the expression (2), the influence of the horizontal electric field generated between the adjacent sub-pixels 70 can be suppressed.

  According to FIG. 9, under a constant Δε, the inter-substrate gap distance X and the overlapping width Y have a proportional relationship. That is, as the inter-substrate gap distance X increases, it is necessary to increase the vertical electric field applied between the substrates in order to control the alignment of the liquid crystal 50. Increase. Therefore, it is necessary to increase the overlapping width Y necessary to reduce the influence of the lateral electric field. On the contrary, when the inter-substrate gap distance X is reduced, the vertical electric field between the substrates is reduced, so that the magnitude of the lateral electric field generated between the sub-pixels 70 may be relatively small. As a result, the overlapping width necessary for reducing the influence of the transverse electric field is also reduced.

Next, FIG. 10 is a diagram in which the y-intercept value of the equation (2) is plotted on the vertical axis and the dielectric anisotropy Δε is plotted on the horizontal axis. The three data points shown in FIG. 10 correspond to the values of the three dielectric anisotropies Δε in FIG. 9, respectively. As a result of obtaining an approximate curve of each data point plotted in FIG. 10, the following equation y = −0.0208Δε ² + 0.5625Δε−3. 0417 ... It has been found that the relationship of the expression (3) holds.

  According to FIG. 10, when the inter-substrate gap distance X is constant, increasing the dielectric anisotropy Δε increases the y-intercept value in FIG. That is, when the dielectric anisotropy Δε increases, the liquid crystal 50 reacts sensitively to the lateral electric field, so that the overlapping width Y necessary to reduce the influence of the lateral electric field must also be increased. Represents.

  If the width Y of the overlapping region does not satisfy the expression (2), the horizontal electric field is relatively larger than the vertical electric field generated between the substrates, so that the influence of the horizontal electric field becomes significant. 50 will cause alignment disorder.

  9 and 10, if the liquid crystal device is configured according to the equation (2), it is not necessary to unnecessarily widen the width of the light shielding region in the vicinity of the overlapping region 12. Moreover, Y = 0.625X−y is given as a limit value when the width of the light-shielding region is reduced (in other words, the light utilization efficiency is increased) while making the liquid crystal domain invisible.

As described above, according to the liquid crystal device 100 according to the present embodiment, the influence of the lateral electric field generated between adjacent sub-pixels can be suppressed by providing the overlapping region that satisfies the expression (2). As a result, high-quality color image display can be realized in a single-plate liquid crystal device with a small pixel pitch.
<1-3: First Modification>
Next, a modification of the present embodiment will be described with reference to FIG. In this modification, the portion 12y formed in the Y direction in the overlapping region 12 formed at the edge of the opening region is provided so as to satisfy the above expression (2), but in the X direction. The formed portion 12x is provided so as not to satisfy the above expression (2). Here, the opening area in this modification is formed in a rectangle, and the side along the Y direction is longer than the side along the X direction. Therefore, by forming the overlapping region 12y so as to satisfy the above equation (2) only for the side along the X direction that is the long side portion of the opening region, different voltages are efficiently applied to adjacent sub-pixels. The lateral electric field generated by this can be suppressed. That is, the lateral electric field can be efficiently suppressed as compared with the case where only the overlapping region 12x formed on the side along the X direction of the opening region is formed so as to satisfy the above expression (2).

Even when the overlap region 12x formed in the X direction, which is the short side direction of the opening region, is formed so as to satisfy the above expression (2), the influence of the lateral electric field generated between the sub-pixels 70 is affected. The effect of the present invention that can be reduced can be obtained to some extent.
<1-4: Second Modification>
Next, another modification will be described with reference to FIG. Here, by using a light-shielding material for the data line 6 and the scanning line 3, the opening region is defined without providing a separate light-shielding film (for example, the light-shielding film 11 in FIG. 7). A black matrix 27 is provided on the counter substrate 20 and defines an opening area together with the data lines 6 and the scanning lines 3.

  FIG. 12 is a cross-sectional view of the image display area 10a of the electro-optical device according to this modification. A data line 6 is formed on the TFT array substrate 10 via a base insulating film 14. The upper layer of the data line is the same as that of the liquid crystal device 100 described with reference to FIG.

  In this case, if the dielectric anisotropy of the liquid crystal 50 is Δε, the inter-substrate gap distance X, the distance between adjacent pixel electrodes 9 is a, and the length of the data line 6 functioning as a light shielding film is b, the overlapping width Y [Μm] is formed so as to satisfy the above formula (1). That is, by defining the width b of the data line 6 and the interval a between the pixel electrodes 9 so as to have such an overlapping region, the influence of a lateral electric field generated when different voltages are applied to adjacent subpixels. Can be suppressed.

In particular, in the case of this modification, it is not necessary to separately provide the light-shielding film 11 on the TFT array substrate 10 as shown in FIG. 7, so that the hierarchical structure on the TFT array substrate 10 can be simplified. Therefore, high-quality color display can be realized in an electro-optical device having a simpler structure.
<Third Modification>
Next, another modification will be described with reference to FIG. Here, the light shielding film 11 is provided on the TFT array substrate 10 with a width b, and the data lines 6 formed on the TFT array substrate 10 and the black matrix 27 formed on the counter substrate 20 are smaller than the light shielding film 11. Is provided. In this modification, in particular, the opening area is not defined by the data line 6. The opening region is mainly defined by the light shielding film 11, and the data lines 6 and the black matrix 27 formed narrower than the light shielding film 11 assist the light shielding property of the light shielding film 11 in an auxiliary manner. Note that the opening area may be defined in a superimposed manner or in cooperation by the light shielding film 11 and the black matrix 27.

  Further, not only the light shielding film 11 but also a capacitor line or a capacitor electrode, which is laminated on the upper layer side or the lower layer side of the data line 6, for example, a metal film such as an Al film, a Ti film, or the like, is formed in the same layer. The opening region may be defined in this way from the dedicated light shielding film thus formed, and may be defined redundantly or cooperatively by the two of the capacitor line and the capacitor electrode and the black matrix 27.

  In this modification, the black matrix 27 on the counter substrate 20 is formed to be narrower than the light shielding film 11, and therefore does not contribute to the definition of the opening region. However, the provision of the black matrix 27 can prevent light leakage and color mixing that occur between different color filters 26, and thus contributes to improving the image quality of the electro-optical device according to this modification.

<2: Manufacturing method>
A method for manufacturing the liquid crystal device 100 according to the present embodiment will be described step by step with reference to FIGS.

  First, as shown in FIG. 14A, an opening region is formed by forming a light shielding film 11 on a transparent substrate 10. The light shielding film 11 is made of, for example, a single metal, an alloy, a metal silicide, a polysilicide, or a laminate of these including at least one of refractory metals such as Ti, Cr, W, Ta, Mo, and Pd. It is good to use. A base insulating film 14 is formed on the formed light shielding film 11 to flatten the surface. On the base insulating film 14, TFTs, data lines 6, scanning line wirings, and the like are formed as necessary. Specifically, after forming a metal film by sputtering or the like, these wirings can be easily formed by etching or the like.

  Next, with reference to FIG. 14B, a process for forming a pixel electrode will be described. In the pixel electrode 9, the pixel electrode 9 made of a transparent material such as ITO (Indium Tin Oxide) is formed on the base insulating film 14 in an island shape with a predetermined pattern for each sub-pixel. Here, the pixel electrode 9 is formed so that the edge portion of the pixel electrode 9 has an overlapping portion (that is, the overlapping region 12) with the edge portion of the opening region when viewed in plan on the substrate 10. Further, the pixel electrode 9 is formed so that at least a part of the overlapping region 12 formed in the X direction and the Y direction satisfies the above expression (2). In the case of manufacturing the liquid crystal device according to the first modification, the pixel electrode 9 is formed so that only the overlapping region 12y existing in the direction along the Y direction of the opening region satisfies the above (2). Good.

  In the case of manufacturing the liquid crystal device according to the second modification (see FIG. 12), it is sufficient to form data lines and scanning lines having light shielding properties instead of forming the light shielding film 11. That is, as shown in FIG. 15A, a base insulating film is formed directly on a transparent substrate, and data lines 6 and scanning lines (not shown in FIG. 15) having light shielding properties are formed on the upper layer, thereby opening openings. Can be an area. An interlayer insulating film 15 is formed on the data line 6, and a pixel electrode 9 is formed on the interlayer insulating film 15 so as to have an overlapping region 12 that at least partially satisfies the above expression (4).

  An alignment film is formed on the pixel electrode 9 to complete the TFT array substrate.

  On the other hand, the counter substrate 20 can be easily formed by disposing the base insulating film 22, the color filter 26, the counter electrode 21 and the alignment film 23 on the transparent substrate 20.

  Finally, the completed TFT array substrate and the counter substrate are arranged to face each other, and the liquid crystal 50 is sealed between them, whereby the liquid crystal device 100 is completed.

  As described above, according to the manufacturing method according to this embodiment, the electro-optical device according to the present invention can be easily manufactured.

<3: Electronic equipment>
Next, specific examples of electronic apparatuses to which the electro-optical device 100 according to the present embodiment can be applied will be described with reference to FIGS.

  First, an example in which the liquid crystal device 100 according to the present embodiment is applied to a display unit of a portable personal computer (so-called notebook personal computer) will be described. FIG. 16 is a perspective view showing the configuration of this personal computer. As shown in the figure, the personal computer 710 includes a main body 712 having a keyboard 711 and a display 713 to which the liquid crystal device 100 according to the present embodiment is applied as a panel.

  The liquid crystal device 100 according to the present embodiment is particularly preferably applied to a liquid crystal television or a display unit of a car navigation device. For example, by using the liquid crystal device 100 according to the present embodiment in the display unit of the car navigation device, a map image is displayed for an observer in the driver's seat, and an observer in the passenger seat is displayed. It is possible to display images such as movies.

  Next, an example in which the liquid crystal device 100 according to the present embodiment is applied to a display unit of a mobile phone will be described. FIG. 17 is a perspective view showing the configuration of this mobile phone. As shown in the figure, the mobile phone 720 includes a plurality of operation buttons 721, a receiver 722, a transmitter 723, and a display unit 724 to which the liquid crystal device 100 according to the present embodiment is applied.

  In addition to the personal computer shown in FIG. 16 and the mobile phone shown in FIG. 17, examples of electronic devices to which the liquid crystal device 100 according to this embodiment can be applied include a liquid crystal television, a viewfinder type, and a monitor direct view type. Examples include a video tape recorder, a car navigation device, a pager, an electronic notebook, a calculator, a word processor, a workstation, a video phone, a POS terminal, and a digital still camera.

  The above-described electro-optical device substrate and the electro-optical device are not limited to the above-described examples, and various changes can be made without departing from the scope of the present invention. .

  The present invention is not limited to the above-described embodiments, and can be appropriately changed without departing from the gist or concept of the invention that can be read from the claims and the entire specification. For electro-optical devices with such changes The substrate, the electro-optical device, and the electronic apparatus including the electro-optical device are also included in the technical scope of the present invention.

It is a top view of the liquid crystal device concerning this embodiment. It is HH 'sectional drawing of FIG. It is a block diagram which shows the electric constitution of the liquid crystal device which concerns on this embodiment. 4 is a plan view schematically showing an arrangement layout of sub-pixels of the liquid crystal device according to the embodiment. FIG. 4 is a plan view of a plurality of adjacent sub-pixels formed on the TFT array substrate of the liquid crystal device according to the embodiment. FIG. It is a top view which shows typically the positional relationship of the pixel electrode and light shielding film which were formed on the TFT array substrate in this embodiment. It is VV 'sectional drawing of FIG. It is a table | surface which shows the example of a dimension of each part of the liquid crystal device which concerns on this embodiment. In the liquid crystal device according to the present embodiment, it is a graph showing the relationship between the overlapping width Y and the inter-substrate gap distance X. FIG. FIG. 9 is a graph showing the relationship between the dielectric anisotropy Δε and the intercept y in FIG. 8 in the liquid crystal device according to the present embodiment. It is a top view which shows typically the positional relationship of the pixel electrode and light shielding film which were formed on the TFT array substrate in the 1st modification. It is sectional drawing in the image display area of the liquid crystal device which concerns on a 2nd modification. It is sectional drawing in the image display area of the liquid crystal device which concerns on a 3rd modification. FIG. 5 is a schematic cross-sectional view showing a configuration at each stage of the manufacturing process of the electro-liquid crystal device according to the embodiment. It is typical sectional drawing which shows the structure in each step of the manufacturing process of the electro-liquid-crystal device which concerns on a 2nd modification. It is an example of the electronic device to which the electro-optical device is applied. It is another example of the electronic device to which the electro-optical device is applied.

Explanation of symbols

  6 data lines, 9 pixel electrodes, 10 TFT array substrate, 10a image display area, 11 light shielding film, 20 counter substrate, 21 counter electrode, 26 color filter, 27 black matrix, 50 liquid crystal, 70 sub-pixels, 80 pixels, 100 liquid crystal apparatus

Claims (9)

A pair of substrates;
An electro-optic material sandwiched between the pair of substrates;
A plurality of scanning lines and a plurality of data lines wired to cross each other on one of the pair of substrates,
A plurality of pixel electrodes arranged for each pixel corresponding to an intersection of the plurality of data lines and the plurality of scanning lines on a side facing the electro-optical material in one of the pair of substrates;
A counter electrode disposed on the other of the pair of substrates so as to face the plurality of pixel electrodes with the electro-optic material interposed therebetween;
A light-shielding film that is provided on at least one of the pair of substrates and that at least partially defines an opening region of the pixel when viewed in plan on the pair of substrates.
The pixel electrode and the light-shielding film are disposed so that the pixel electrode and the light-shielding film partially overlap each other when viewed in plan on the pair of substrates.
The inter-substrate gap distance X between the pair of substrates and the overlapping width Y where the pixel electrode and the light shielding film partially overlap are inequalities.
Y ≧ 0.625X−y
However, y = −0.0208Δε ² + 0.5625Δε−3.0417
Δε = the electro-optical device satisfying the dielectric anisotropy of the electro-optical material. The opening region has a planar shape in which a long side direction coincides with one of a first direction along the scanning line and a second direction along the data line,
2. The inter-substrate gap distance X and the overlapping width Y satisfy the inequality for a portion where the pixel electrode and the light shielding film partially overlap along the one direction. Electro-optic device.   3. The inter-substrate gap distance X and the overlapping width Y satisfy the inequality for both the first direction along the scanning line and the second direction along the data line. The electro-optical device according to 1.   The at least one of the data line and the scanning line is made of a light-shielding material, and defines the opening region at least partially in addition to the light-shielding film. The electro-optical device according to any one of the above. The plurality of pixel electrodes are arranged for each of the sub-pixels corresponding to any one of R (red), G (green), and B (blue), for each pixel.
The light-shielding film at least partially defines an opening region of the sub-pixel;
The electro-optical device according to claim 1, wherein the sub-pixels are arranged along the first direction and the second direction. A pair of substrates;
An electro-optic material sandwiched between the pair of substrates;
A plurality of scanning lines and a plurality of data lines wired to cross each other on one of the pair of substrates,
A plurality of pixel electrodes arranged for each pixel corresponding to an intersection of the plurality of data lines and the plurality of scanning lines on a side facing the electro-optical material in one of the pair of substrates;
A counter electrode disposed on the other of the pair of substrates so as to oppose the plurality of pixel electrodes with the electro-optical material interposed therebetween,
At least one of the data line and the scanning line is made of a light-shielding material, and at least partially defines an opening region of the pixel when viewed in plan on the pair of substrates.
The pixel electrode and the at least one wiring are arranged so as to partially overlap the pixel electrode and the at least one wiring when viewed in plan on the pair of substrates.
An inter-substrate gap distance X between the pair of substrates and an overlap width Y in which the pixel electrode and the at least one wiring partly overlap are inequalities.
Y ≧ 0.625X−y
However, y = −0.0208Δε ² + 0.5625Δε−3.0417
Δε = the electro-optical device satisfying the dielectric anisotropy of the electro-optical material. A pair of substrates, an electro-optical material sandwiched between the pair of substrates, a plurality of scanning lines and a plurality of data lines wired to cross each other on one of the pair of substrates, and the pair of substrates A plurality of pixel electrodes arranged for each pixel corresponding to an intersection of the plurality of data lines and the plurality of scanning lines on the side facing the electro-optic material in one of the plurality of data lines and the other of the pair of substrates, A counter electrode disposed so as to face a plurality of pixel electrodes via the electro-optic material and at least one of the pair of substrates, and when viewed in plan on the pair of substrates, an opening of the pixel An electro-optical device manufacturing method for manufacturing an electro-optical device comprising a light shielding film that at least partially defines a region,
A step of arranging the pixel electrode and the light shielding film so that the pixel electrode and the light shielding film partially overlap each other when viewed in plan on the pair of substrates;
The inter-substrate gap distance X between the pair of substrates and the overlapping width Y where the pixel electrode and the light shielding film partially overlap are inequalities.
Y ≧ 0.625X−y
However, y = −0.0208Δε ² + 0.5625Δε−3.0417
Δε = Dielectric anisotropy of the electro-optical material is satisfied. A method of manufacturing an electro-optical device. A pair of substrates, an electro-optical material sandwiched between the pair of substrates, a plurality of scanning lines and a plurality of data lines wired to cross each other on one of the pair of substrates, and the pair of substrates A plurality of pixel electrodes arranged for each pixel corresponding to an intersection of the plurality of data lines and the plurality of scanning lines on the side facing the electro-optic material in one of the plurality of data lines and the other of the pair of substrates, A counter electrode disposed so as to face a plurality of pixel electrodes with the electro-optic material interposed therebetween, and at least one of the data line and the scanning line is made of a light shielding material, An electro-optical device manufacturing method for manufacturing an electro-optical device that at least partially defines an opening area of the pixel when viewed in plan on the pair of substrates,
A step of arranging the pixel electrode and the at least one wiring so that the pixel electrode and the at least one wiring are partially overlapped when viewed in plan on the pair of substrates;
An inter-substrate gap distance X between the pair of substrates and an overlap width Y in which the pixel electrode and the at least one wiring partly overlap are inequalities.
Y ≧ 0.625X−y
However, y = −0.0208Δε ² + 0.5625Δε−3.0417
Δε = Dielectric anisotropy of the electro-optical material is satisfied. A method of manufacturing an electro-optical device.   An electronic apparatus comprising the electro-optical device according to claim 1.

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