JP2010007113A - Film deposition method and film deposition apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a film deposition method and a film deposition apparatus stably performing film deposition free from an increase in the surface roughness of a substrate and a degradation in the film quality attributable to emitted gas by suppressing etching of the substrate and generation of emitted gas attributable thereto when performing the film deposition by the sputtering while conveying the substrate. <P>SOLUTION: A plurality of targets are arranged in the substrate conveying direction. Discharge gas in a film deposition chamber and emitted gas derived from the substrate component are detected, and the power to the target on the most upstream side is controlled so that the amount of emitted gas derived from the substrate component to the amount of the discharge gas is ≤1%. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to film formation by sputtering, and in particular, relates to a film formation method and a film formation apparatus capable of suppressing damage on a substrate surface and greatly suppressing deterioration in film quality caused by damage on the substrate surface.

In film formation by sputtering, damage to the substrate is a serious problem.
That is, the energy of the film-forming material atoms released from the target by sputtering is generally very high, such as several tens to a hundred eV. Therefore, when they collide with the substrate, ion damage or thermal damage is given to the surface of the substrate. As a result, the substrate surface is damaged by etching or the like, and the surface roughness of the substrate increases.

  Such a phenomenon leads to various performance deteriorations such as yellowing of the substrate and a decrease in adhesion between the substrate and the deposited film. Also, in applications where high smoothness is required on the substrate surface, such as a gas barrier film, the target performance cannot be obtained due to the increase in surface roughness.

In addition, when the substrate surface is formed of a polymer material or the like, such as when the substrate is a plastic film, the substrate material released from the surface by etching or the like is gasified in the film forming system. In other words, the film is taken into the film to be formed, and as a result, the film quality, film composition, and film thickness also change.
Further, the gas released from the substrate is decomposed by the plasma into radicals. Since this radical has an etching effect, the radical damages the surface of the substrate by etching or the like, like the metal released from the target. Sexual deterioration occurs.

  As a result of the gas released into the film formation system, the contamination of the film and the damage to the substrate are caused by the gas generated from foreign matters such as moisture remaining in the film formation system and the moisture contained in the substrate being decompressed. / Also generated by a gas released by heating (outgas of substrate).

Outgassing from the substrate is generally addressed by performing a pretreatment that heats the substrate under reduced pressure. However, such pretreatment cannot cope with a gas released due to damage to the substrate during film formation.
On the other hand, in reactive sputtering, the amount of reactive gas in the film formation system (film formation chamber) is detected by a mass spectrometer or the like, so that gas resulting from substrate damage, substrate outgas, Changes in the amount of reaction gas due to gases caused by moisture (hereinafter these gases are collectively referred to as “release gas”) are detected, and the amount of reaction gas introduced is adjusted according to the detected amount of reaction gas How to do is known. Similarly, in reactive sputtering, there is also known a method of controlling the amount of reaction gas introduced by feeding back the discharge voltage so that the discharge voltage and light emission of sputtering become constant.

According to these methods, it is possible to cope with fluctuations in the film thickness, composition, etc. of the film to be formed due to fluctuations in the amount of reaction gas due to the released gas.
However, these methods cannot prevent the released gas from being taken into the film, and cannot prevent the substrate etching due to the film forming material atoms and the released gas released from the target.

On the other hand, in Patent Document 1, in a film forming apparatus for continuously forming a film on a long substrate (film), sputtering having a target and an electrode corresponding to the rotation direction of a drum that conveys the substrate. A plurality of apparatuses are arranged, and the driving power of the first sputtering apparatus located at the uppermost stream in the substrate transport direction is set to 0.15 to 6 W / cm ^2. Sputtering apparatuses other than the first sputtering apparatus A film forming apparatus that supplies a driving power larger than that of one sputtering apparatus is disclosed.

JP 2004-339602 A

  According to the method disclosed in Patent Document 1, a thin film is formed with low power, which is unlikely to cause etching of the substrate, by the first sputtering apparatus arranged at the most upstream, It is possible to provide an action like a barrier film that suppresses substrate damage and emission gas generation by a sputtering apparatus. As a result, it is possible to suppress the increase in the surface roughness of the substrate and the deterioration of the film quality due to the released gas, and to perform high-speed film formation with a sputtering apparatus downstream of the first sputtering apparatus.

However, the generation state of the released gas varies depending on various factors such as the installation environment of the film forming apparatus, the state of the substrate, and the amount of moisture remaining in the film forming system.
Therefore, even if a plurality of sputtering devices are arranged in the substrate transport direction and the film formation in the most upstream sputtering device is performed with low power that is unlikely to cause etching or the like, depending on the state of the substrate and the state in the vacuum chamber, As a result, damage to the substrate and generation of released gas cannot be sufficiently suppressed. As a result, the surface roughness of the substrate increases and film quality deterioration due to the released gas often occurs.
Therefore, the advent of a method and an apparatus capable of stably performing film formation having a certain quality by sputtering is desired.

  An object of the present invention is to solve the above-described problems of the prior art. When a film is formed on a substrate by sputtering, the state of the substrate, foreign matter such as moisture remaining in the vacuum chamber, the installation environment of the film forming apparatus, etc. Regardless of whether the surface roughness of the substrate is increased due to damage to the substrate caused by etching or the like due to the film-forming material atoms released from the target, or the film quality is deteriorated due to the gas released from the substrate due to substrate damage. It is an object of the present invention to provide a film forming method and a film forming apparatus by sputtering, which can suppress and can stably form a film of a predetermined quality having intended characteristics and performance.

  In order to achieve the above object, the film forming method of the present invention provides a plurality of targets in the transport direction of the substrate and forms a film when performing film formation on the surface of the substrate by sputtering while transporting the substrate. The amount of gas in the system is measured, and according to the measurement result, the amount of released gas derived from the substrate component is 1% or less of the amount of discharge gas with respect to the most upstream target in the substrate transport direction. A film forming method comprising adjusting power. I will provide a.

  In addition, the second aspect of the film forming method of the present invention provides a plurality of targets in the transport direction of the substrate when the film is formed on the surface of the substrate by sputtering while the substrate is transported. The surface roughness Ra-a of the substrate and the surface roughness Ra-b after film formation with the most upstream target in the substrate transport direction are detected, and the Ra-a / Ra-b is 1 The film forming method is characterized in that the electric power for the most upstream target in the substrate transfer direction is adjusted so that it is less than .2.

  In such a film forming method of the present invention, the film thickness by the most upstream target in the substrate transport direction is detected, and according to the detection result, the film having the target thickness is formed. It is preferable to adjust the power supplied to the electrodes for the targets other than the most upstream target in the substrate transport direction, and it is preferable to form a gas barrier film, and a DC pulse power source is used as a power source for performing sputtering. It is preferable to use it.

  Moreover, the film forming apparatus of the present invention is a film forming apparatus for forming a film on a long substrate by sputtering, and includes a transport means for transporting the substrate in the longitudinal direction and a transport direction of the substrate for holding a target. A plurality of target holding means arranged in an electrode, an electrode corresponding to the target held by the target holding means, a power supply means for supplying power for sputtering to the electrode, and a discharge gas in the film forming system. A gas supply means for supplying the gas, and a gas measurement means for measuring the amount of gas in the film forming system, and an amount of the released gas derived from the component of the substrate according to a measurement result by the gas measurement means Control means for adjusting the power supplied to the electrode for the most upstream target in the substrate transport direction by the power supply means so that the amount of the discharge gas is 1% or less. To provide a film forming apparatus characterized and.

  In such a film forming apparatus of the present invention, it has a film thickness detecting means for detecting the film thickness by the target located at the uppermost stream in the substrate transport direction, and the control means has a film thickness by the film thickness measuring means. According to the measurement result, the power supply means adjusts the power supplied to the electrodes for the target other than the target located at the most upstream in the substrate transport direction so as to form a film with a desired thickness. It is also preferable that the power supply means is a DC pulse power supply.

The present invention having the above configuration is actually caused by the film-forming material atoms released from the target by detecting the amount of gas released from the substrate component that is actually released from the substrate during film formation. The state of damage to the substrate due to etching or the like is detected, and the power supplied to the electrode for the most upstream target is adjusted so that the gas released from the substrate is 1% or less of the discharge gas. Alternatively, by grasping the increase state of the actual surface roughness of the substrate by sputtering, the ratio of the surface roughness of the substrate before film formation to the surface roughness after film formation by the most upstream target is less than a predetermined value. In addition, the power supplied to the electrode for the most upstream target is adjusted.
Therefore, according to the present invention, regardless of the installation environment of the film forming apparatus, the state of the substrate, the moisture remaining in the film forming system, etc., the damage is caused by the substrate and the substrate components from the substrate resulting therefrom. The generation of the released gas is suitably suppressed and film formation is performed with the uppermost target, and the film with the uppermost target is caused to act as a barrier film (protective film) that suppresses damage to the substrate and outgas from the substrate. Thus, film formation using the target thereafter can be performed.

  Therefore, according to the present invention, in film formation by sputtering, regardless of the installation environment of the film formation apparatus, the state of the substrate, etc., the surface roughness of the substrate can be stably increased or the film quality can be deteriorated due to the released gas. Etc. can be suitably suppressed, and a film of a predetermined quality having the desired characteristics and performance can be stably formed.

  Hereinafter, a film forming method and a film forming apparatus of the present invention will be described in detail based on preferred examples shown in the accompanying drawings.

FIG. 1 shows an example of a film forming apparatus of the present invention that implements the first embodiment of the film forming method of the present invention.
A film forming apparatus 10 shown in FIG. 1 forms (forms) a film that exhibits a desired function on the surface of a substrate Z by reactive sputtering, and manufactures, for example, a gas barrier film. And a pretreatment chamber 14, a film formation chamber 16, and a winding chamber 18.
Such a film forming apparatus 10 sends out a substrate Z from a substrate roll 20 formed by winding a long substrate Z (film original fabric) in a roll shape, and performs reactive sputtering while conveying the substrate Z in the longitudinal direction. This is an apparatus for performing film formation by the aforementioned so-called roll-to-roll method in which a film is formed and the formed substrate Z is wound into a roll.

The supply chamber 12 includes a rotating shaft 24, a guide roller 26, and a vacuum exhaust unit 28.
In the film forming apparatus 10, a substrate roll 20 formed by winding a long substrate Z is loaded on the rotation shaft 24 of the supply chamber 12.
When the substrate roll 20 is loaded on the rotating shaft 24, the substrate Z passes through the supply chamber 12, the pretreatment chamber 14 and the film formation chamber 16, and a predetermined transport path from the winding chamber 18 to the winding shaft 30. Threaded (sent). In the film forming apparatus 10, the feeding of the substrate Z from the substrate roll 20 and the winding of the film-formed substrate Z on the winding shaft 30 are performed in synchronization, and a long substrate Z is transferred in a predetermined transport path. The substrate Z is formed by pretreatment (degassing treatment) and reactive sputtering while being conveyed in the longitudinal direction.

In the present invention, the substrate Z for film formation is not particularly limited, and various resin films (polymer film (plastic film)) such as a PET (polyethylene terephthalate) film, various metal sheets such as an aluminum sheet, etc. Various substrates (base films) can be used as long as they can be formed by sputtering.
In addition, the substrate Z has various functions such as a protective layer, an adhesive layer, a light reflection layer, a light shielding layer, a planarization layer, a buffer layer, and a stress relaxation layer on the surface of a resin film or a metal sheet as a base material. Various layers made of an inorganic material, an organic material, or the like may be formed.

Here, as will be described in detail later, in the present invention, the film-forming material atoms released from the target greatly suppress damage to the substrate caused by ion damage or etching caused by thermal damage on the substrate surface, Generation | occurrence | production of the discharge gas (release gas derived from a substrate component) from a board | substrate by the damage of this board | substrate can be suppressed significantly.
Therefore, the present invention can be particularly suitably used for a substrate whose surface is formed of an organic material, such as a resin film such as a PET film, which is easily damaged by the film-forming material atoms.

In the supply chamber 12, the rotating shaft 24 is rotated clockwise in the drawing by a driving source (not shown), the substrate Z is sent out from the substrate roll 20, a predetermined path is guided by the guide roller 26, and the substrate Z is separated from the partition wall. It is sent to the pretreatment chamber 14 from a slit 32 a provided in 32.
In the illustrated film forming apparatus 10, as a preferred embodiment, the supply chamber 12 is also provided with a vacuum exhaust means 28. A vacuum evacuation means 28 is provided in the supply chamber 12, and during film formation, the supply chamber 12 is reduced in pressure in the pretreatment chamber 14 (ie, heating / heating) by setting the same pressure as the pressure (vacuum degree) of the pretreatment quality 14 described later. The pretreatment by decompression is prevented from being affected.

  The vacuum evacuation means 28 is not particularly limited, and a vacuum pump such as a turbo pump, a mechanical booster pump, and a rotary pump, an auxiliary means such as a cryocoil, an ultimate vacuum degree and an exhaust amount adjustment means, etc. are utilized. Various known (vacuum) evacuation means used in vacuum film forming apparatuses can be used. In this regard, the same applies to other vacuum exhaust means described later.

In the present invention, it is not limited to providing the evacuation means in all the chambers, and the evacuation means is not provided in the chambers such as the supply chamber 12 and the winding chamber 18 that do not require evacuation as a process. May be. However, when the adjacent chambers are evacuated, it is preferable to make the portion through which the substrate Z passes, such as the slit 32a, as small as possible in order to reduce the influence on the degree of vacuum of the adjacent chambers. Alternatively, a sub chamber may be provided between the chambers, and the inside of the sub chamber may be decompressed.
Also in the illustrated film forming apparatus 10 having the vacuum evacuation means in all the chambers, it is preferable to make the portion through which the substrate Z passes, such as the slit 32a, as small as possible.

As described above, the substrate Z sent out from the substrate roll 20 is then transferred to the pretreatment chamber 14.
The pretreatment chamber 14 heats the substrate Z under reduced pressure, heats the substrate Z while transporting it, and includes a release gas (substrate) contained in the substrate Z and released from the substrate Z by pressure reduction / heating by sputtering. This is a site for removing substances (mainly moisture) that become Z outgas.
In the illustrated example, the pretreatment chamber 14 includes a vacuum exhaust unit 34, a pair of conveying rollers 36a and 36b, and heating units 38a and 38b.

The two heating means 38a and 38b are known heating means (heaters), and are arranged so as to face the substrate Z across the conveyance path of the substrate Z by the conveyance roller pairs 36a and 36b.
The pretreatment chamber 14 is decompressed to a predetermined degree of vacuum by the vacuum exhaust means 34. In the pretreatment chamber 14, the substrate Z transported from the supply chamber 12 is heated by the heating means 38a and 38b while being sandwiched and transported by the transport roller pairs 36a and 36b. By this reduced pressure heating, a so-called degassing process is performed in which a substance that is an outgas such as moisture contained in the substrate Z is removed.
The substrate Z that has been degassed in the pretreatment chamber 14 is transferred to the film formation chamber 16 through a slit 39 a formed in the partition wall 39 that separates the pretreatment chamber 14 and the film formation chamber 16.

In the present invention, the pretreatment (degassing treatment) is not limited to the illustrated method, and various pretreatment methods used in a roll-to-roll film forming apparatus (manufacturing apparatus) All are available.
Further, the processing conditions may be set as appropriate according to the type of the substrate Z and the like.

  The film forming chamber 16 forms a film on the surface (film forming surface) of the substrate Z by reactive sputtering. The drum 40, the first cathode 42, the second cathode 46, and guide rollers 48 and 50 are used. And a first power supply 52, a second power supply 54, a gas supply means 56, a gas detection means 58, a film thickness detection means 60, a control means 62, and a vacuum exhaust means 64.

The drum 40 is a cylindrical member that rotates counterclockwise in the drawing around the center line. The substrate Z supplied from the pretreatment material 14 and guided to a predetermined path by the guide roller 48 is wound around a predetermined area on the peripheral surface of the drum 40 and supported / guided by the drum 40 to a predetermined film forming position. On the other hand, it is transported along a predetermined transport path, further guided by the guide roller 50, and transported to the winding chamber 18.
The drum 40 may be grounded (earthed) so as to function also as a bias electrode, or may be connected to a power source such as a high frequency power source.

The first cathode 42 and the second cathode 46 are known cathodes (electrodes) used in the sputtering apparatus, and are arranged in the transport direction of the substrate Z, that is, in the rotation direction of the drum 40.
In the illustrated example, both the first cathode 42 and the second cathode 46 also serve as a target holding unit, and are configured to hold the target facing the drum 40 that positions the substrate Z at the film forming position. / Arranged.
Hereinafter, the most upstream target held by the first cathode 42 is referred to as a first target Tg-1, and the target held by the second cathode 46 is referred to as a second target Tg-2.

  The first power source 52 is a power source that supplies power to the first cathode 42 for film formation by sputtering. Similarly, the second power source 54 is a power source that supplies power to the second cathode 46 for film formation by sputtering.

Both the first power source 52 and the second power source 54 may be a known power source that is used in an apparatus for forming a film by reactive sputtering.
Here, in the present invention, the first power supply 52 and the second power supply 54 are preferably DC pulse power supplies. By using a DC pulse power supply as a power supply to supply power for sputtering and setting the duty ratio appropriately, arc discharge can be suitably prevented and the film deposited on the substrate Z is prevented from being damaged. can do.

  Further, the present invention is not limited to the configuration in which the cathode also serves as the target holding means, and a target holding means for holding the target in a predetermined position may be provided separately from the cathode.

Here, the film formation chamber 16 in the illustrated example is one in which two cathodes, that is, targets, are arranged in the transport direction of the substrate Z, but the present invention is not limited to this, and three or more targets are arranged. Of course, the (cathode / power supply) may be arranged in the transport direction of the substrate Z.
In the case of having three or more targets, the film formation conditions (control of film formation) by a target other than the most upstream target can be obtained in the same manner as the second target Tg-2. It can be set as appropriate.

The driving of the first power supply 52 and the second power supply 54 is controlled by the control means 62.
The control means 62 controls the driving of the first power source 52 according to the detection result by the gas detection means 60, and as a preferred mode, according to the film thickness measurement result by the film thickness measurement means 60, the second power supply 54 Control the drive. This will be described in detail later.

The gas supply means 60 supplies a discharge gas such as argon gas and a reaction gas such as oxygen gas in the vicinity of both cathodes in the film forming chamber 16.
The gas supply means 60 may be a known gas supply means used in a vacuum film forming apparatus such as a reactive sputtering apparatus or a plasma CVD apparatus. Further, the discharge gas and the reactive gas may be supplied by separate gas supply means.
Although the film forming chamber 14 in the illustrated example has only one gas supply unit 60, the present invention is not limited to this, and the gas supply unit 60 may be provided corresponding to each target. Good.

As described above, the substrate Z is guided by the guide roller 48 and wound around the drum 40, and is supported / guided by the drum 40 to a predetermined film forming position, and is transported along a predetermined transport path. Guided by 50 and conveyed to the winding chamber 18.
In parallel with the transfer of the substrate Z, the inside of the film forming chamber 16 is set to a predetermined pressure by the vacuum exhaust means 64, the first power source 42 and the second power source 46 are driven, and the reaction gas and discharge are supplied from the gas supply means 56. Supply gas. As a result, the substrate Z is first subjected to reactive sputtering by the most upstream first target Tg-1 (sputtering means comprising the first target Tg-1, the first cathode 42, the first power source 52, etc.) in the substrate transport direction. Next, film formation by reactive sputtering is performed by the second target Tg-2 (sputtering means including the second target Tg-2, the second cathode 46, the second power supply 54, etc.). It is.

Here, as described above, the film forming chamber 16 according to the present invention includes the gas detection means 58 and the film thickness detection means 60, and the control means 62 controls the first power source according to the detection results of both detection means. 52 and the drive of the second power source 54 are controlled.
The gas detection means 58 detects various gases present in the film forming chamber 16. The detection result by the gas detection means 58 is supplied to the control means 62.
The gas detection means 58 is not particularly limited, and may be a detection means using a mass spectrometer (Q-mass), a means for detecting the amount of gas from the emission intensity of plasma, a reactive sputtering apparatus, a plasma CVD apparatus, or the like. In the vacuum film forming apparatus, all known devices that are used for gas detection in the film forming system during film forming can be used. Among these, gas detection means using a mass spectrometer (mass analyzer) is particularly suitable.

The film thickness detection means 60 detects the film thickness of the film formed by the first target Tg-1. The detection result of the film thickness by the film thickness detection means 60 is supplied to the control means 62.
The film thickness detecting means 60 is not particularly limited, and the film thickness detecting means using a laser displacement meter, the film thickness detecting means using a crystal resonator, the film thickness detecting means using an infrared sensor, XRF (fluorescent X-rays) Any known device used for detecting a film thickness in a film forming system in a film forming apparatus such as a reactive sputtering apparatus or a plasma CVD apparatus, such as a film thickness detecting means using (analysis), can be used. Alternatively, the relationship between the power supplied to the first cathode 42 and the film formation rate is preliminarily studied and tabulated by experiments or simulations, and according to the power actually supplied to the first cathode 42 during film formation, You may detect the film thickness by the 1st cathode 42 using the said table.

As described above, the substrate Z is first formed by the first target Tg-1, and then formed by the second target Tg-2 on the film formed by the first target Tg-1. The
The control means 62 controls the driving of the first power supply 52 that supplies power for performing film formation by sputtering to the first cathode 42 corresponding to the first target Tg-1 according to the detection result by the gas detection means 58. To do. Further, in accordance with the film thickness detection result by the film thickness detection means 60, the driving of the second power source 54 that supplies power for performing film formation by sputtering to the second cathode 46 corresponding to the second target Tg-2 is controlled. To do.

Specifically, the control unit 62 detects the amount of discharge gas and the amount of released gas derived from the substrate components in the film forming chamber 16 from the gas detection result in the film forming chamber 16 by the gas detecting unit 58. .
Note that the emission gas derived from the substrate component is an emission gas derived from the formation component of the substrate Z (substrate formation material). More specifically, it is an emission gas generated by evaporation of a substrate component scraped from the substrate Z due to damage to the substrate Z due to etching or the like by film forming material particles released from the target.

  In the illustrated example, as an example, the control unit 62 has a mass (for example, a molecular mass number) that is clearly larger than that of the release gas, the reaction gas, and the discharge gas derived from moisture among the gases detected by the gas detection unit 58. A gas or a gas having a mass corresponding to the formation component of the substrate Z is determined to be an emission gas derived from the substrate component.

The release gas generated in the film forming chamber 16 (sputtering apparatus (vacuum chamber)) includes a gas generated by evaporation of moisture remaining in the film forming chamber 16, the outgas of the substrate Z, and the substrate components. Derived emission gas and the like can be mentioned.
As a matter of course, a discharge gas and a reactive gas are also present in the film formation chamber 16 during film formation.

The discharge gas and the reactive gas are known gases, and the components and mass are known.
Further, since the released gas generated from the moisture in the film forming chamber 16 and the outgas of the substrate Z are basically derived from air and moisture, the mass is almost determined.
On the other hand, the release gas derived from the substrate component caused by the substrate damage caused by etching or the like by the material atoms released from the target is a gas generated by cutting the hydrocarbon compound in many cases, and discharge Compared to gas, reaction gas, and released gas derived from moisture, it has a large mass.
Further, if the formation component of the substrate Z (formation material on the substrate surface) is known, the molecular weight of the released gas derived from the substrate component can be substantially specified. Therefore, by using a mass spectrometer or the like as the gas detection means 58, the molecular weight derived from the monomer of the component forming the substrate or the molecular weight of the fragment after the easily ruptured portion is broken to derive from the substrate component The released gas can be determined.
Therefore, a gas with a clearly large mass or a gas having a mass (molecular mass number) corresponding to a constituent component of the substrate Z is derived from the substrate component compared to the discharge gas, the reaction gas, or the release gas derived from moisture. It can be determined that it is a released gas.

When the control means 62 detects the amount of discharge gas and the amount of released gas derived from this substrate component (hereinafter referred to as “amount of emitted gas derived from the substrate” for convenience), the substrate in the film forming chamber 16 is detected. The drive of the first power supply 52 is controlled, that is, the power supplied to the first cathode 42 (the power corresponding to the first target Tg-1) so that the amount of the emitted gas derived is 1% or less of the discharge gas amount. To control.
Specifically, as an example, the control means 62 calculates the gas partial pressure of the discharge gas and the gas partial pressure of the discharge gas derived from the substrate from the detection result by the gas detection means 58, and the gas content of the discharge gas derived from the substrate. The first pressure is set to 1% or less of the gas partial pressure of the discharge gas (that is, “the gas partial pressure of the discharge gas derived from the substrate / the gas partial pressure of the discharge gas <0.01”). The drive of the power source 52 is controlled. That is, since the gas amount ratio depends on the gas partial pressure ratio, the amount of gas released from the substrate in the film forming chamber 16 is controlled to be 1% or less of the discharge gas amount using the gas partial pressure.
In other words, the control means 62 ensures that the amount of gas emitted from the substrate is 1% or less of the discharge gas amount (in this example, the gas discharge pressure derived from the substrate is 1% or less of the discharge gas partial pressure). Ii) feedback control of the driving of the first power supply 52 using the gas detection result by the gas detection means 58.
By having such a configuration, the present invention stably increases the surface roughness of the substrate and releases it regardless of the installation environment of the film forming apparatus, the state of the substrate, moisture remaining in the vacuum chamber, and the like. Deterioration of the film quality caused by the gas can be suitably suppressed, and a film of a predetermined quality having the desired characteristics and performance can be stably formed.

In the above example, the gas partial pressure depending on the gas amount ratio is used as the gas amount, but various methods other than this can be used in the present invention.
For example, if a mass spectrometer (Q-mass) is used as the gas detection means 58, the main peak of Q-mass is corrected with a sensitivity coefficient, and the ratio of the emission gas and discharge gas derived from the substrate is A method of performing feedback control so that the amount of gas emitted from the substrate falls within a predetermined range corresponding to 1% or less of the amount of discharge gas can be suitably used.

As described above, in film formation by sputtering, high-energy film-forming material particles released from the target are incident on the substrate, causing ion damage and thermal damage to the substrate, which causes etching of the substrate surface and the like. As a result, the substrate is damaged, and as a result, the surface roughness of the substrate increases. Also due to substrate damage. There are also problems such as the generation of gas emitted from the substrate and the incorporation of the gas into the film, which degrades the film quality. Further, during film formation by sputtering, an outgas of the substrate and a release gas due to moisture remaining in the film formation chamber 16 are also generated, and this release gas is also taken into the film to deteriorate the film quality.
Furthermore, these emitted gases become radicals by plasma, and these radicals enter the substrate, which also damages the substrate and increases the surface roughness.

On the other hand, as described above, Patent Document 1 discloses a plurality of sputtering means (such as a roll-to-roll film forming apparatus) in a substrate transport direction in an apparatus that performs film deposition while transporting a substrate. A film forming apparatus is disclosed in which a target) is disposed, electric power to the uppermost sputtering means in the transport direction is reduced, and high-speed film formation is performed thereon by a sputtering means disposed downstream thereof.
According to this apparatus, first, a film such as a barrier film is formed by a most upstream sputtering means while suppressing damage to the substrate, and a film such as a barrier film is formed on this film by a downstream sputtering means. By performing the above, it is possible to suppress the damage of the substrate during the film formation by the downstream sputtering means and the generation of the emission gas derived from the substrate.

However, the generation of the released gas varies depending on the type and state of the substrate, the installation environment of the apparatus, the state in the film forming chamber (vacuum chamber), the film forming conditions such as the film forming speed and the film forming pressure.
For example, when the substrate contains a large amount of moisture and there is a lot of outgas, when a large amount of moisture remains in the vacuum chamber, or when the humidity of the substrate installation environment is high, the emission gas due to moisture is more than normal. Are also produced in large quantities. Radicals generated from the released gas enter the substrate and damage the substrate. In particular, oxygen radicals generated from moisture cause great damage to the substrate and strongly damage the substrate. As a result, the amount of released gas increases and the surface roughness of the substrate also increases.
That is, even if the power is low, the method disclosed in Patent Document 1 that supplies constant power to the most upstream sputtering means (target) corresponds to such a state of the substrate, a state of the film formation chamber, and the like. Therefore, stable and proper film formation cannot be performed.

  On the other hand, in the present invention, as described above, the gas detection means 58 detects the amount of released gas and discharge gas derived from the substrate in the film formation chamber 16, and the control means 62 , The first power source 52 that supplies power to the first cathode 42 holding the most upstream first target Tg-1 is driven so that the amount of gas emitted from the substrate is 1% or less of the amount of discharge gas. Feedback control.

That is, in the present invention, the amount of emitted gas derived from the substrate to be discharged is detected, and the drive of the first power supply 52 (supplied power to the first target Tg-1) is performed so that this is 1% or less of the amount of discharged gas. By controlling, the damage actually received by the substrate Z by the film formation on the first target Tg-1 such as the etching of the substrate Z actually generated by the film formation is detected, and the first target Tg is detected. The film formation on the first target Tg-1 is controlled so that the damage of the substrate Z and the generation of emission gas derived from the substrate due to the film formation at -1 are sufficiently low.
Therefore, according to the present invention, the substrate Z can be stably damaged regardless of the type and state of the substrate, the installation environment of the apparatus, the state of the film forming chamber, the film forming conditions such as the film forming speed and the film forming pressure. Generation | occurrence | production of the emitted gas derived from a board | substrate can be suppressed. As a result, according to the present invention, it is possible to stably manufacture a high-quality product that sufficiently suppresses an increase in substrate surface roughness, a decrease in film quality due to the released gas, and the like.

In the present invention, if the amount of gas emitted from the substrate exceeds 1% of the amount of discharge gas, the etching of the substrate Z and the deterioration of the film quality caused by the gas emitted from the substrate become large, and an appropriate product is stably manufactured. It becomes difficult to do.
In the present invention, the amount of gas emitted from the substrate is preferably 0.1% or less of the amount of discharge gas.

On the other hand, in terms of suppression of increase in surface roughness of substrate Z due to damage to substrate Z and suppression of film quality deterioration due to emission gas derived from substrate, the amount of emission gas derived from substrate relative to the amount of discharge gas is smaller. Is preferred. However, if the electric power for the first target Tg-1 is too small, the film formation here cannot be performed sufficiently, and this film causes substrate damage or emission gas in the film formation with the second target Tg-2. There is a possibility that the deterrent effect cannot be obtained sufficiently.
In consideration of the above, it is preferable to control the driving of the first power supply 52 so that the amount of gas emitted from the substrate is 0.005% or more of the amount of discharge gas.

In the present invention, there is no particular limitation on the method for controlling the amount of emitted gas derived from the substrate to be 1% or less of the amount of discharge gas in the film forming chamber 16, and the detection result by the gas detection means 58 is used. Various feedback control methods can be used.
For example, a value of 1% or less, such as 0.5%, is set as appropriate, and the control means 62 is configured so that the amount of emitted gas derived from the substrate is constant at a set value with respect to the amount of discharge gas. A method of controlling the driving of the first power supply 52 according to the detection result by the gas detection means 58 is exemplified. Alternatively, a threshold value (upper limit value and lower limit value) of 1% or less and a reference power of the first power source 52 are set, and film formation is usually performed with the reference power. When the amount of the emitted gas derived from the source increases and the amount relative to the discharge gas amount exceeds the upper limit value, the drive of the first power source 52 is controlled so that the amount of the emitted gas derived from the substrate decreases, and the substrate-derived emission with respect to the discharge gas amount. When the gas amount reaches the lower limit, a method of returning the first power source 52 to the reference power can also be used.

In the present invention, the film thickness of the first target Tg-1 is not particularly limited, but is preferably about 0.5 to 5 nm, particularly preferably about 0.5 to 2 nm.
By setting the film thickness by the first target Tg-1 to 0.5 nm or more, it is possible to more stably obtain the deterring effect such as etching in the film formation by the downstream second target Tg-2. A favorable result is obtained in terms of points.
On the other hand, when the film thickness of the first target Tg-1 is 5 nm or less, good productivity can be ensured (the first target Tg-1 usually has a low film formation rate), and the second target Tg. -2 provides favorable results in that a film having a desired film quality can be formed as a main component.

As described above, the substrate Z formed by the first target Tg-1 is then sputtered by the second target Tg-2 (the second target Tg-2, the second cathode 46, the second power supply 54, etc.). ).
The film formation by the second target Tg-2 is performed on the film by the first target Tg-1. Therefore, the film by the first target Tg-1 expresses an action like a barrier film (protective film), and damage of the substrate Z and generation of emission gas derived from the substrate by the film formation by the second target Tg-2 It can suppress suitably.
Therefore, with the second target Tg-2, efficient film formation can be performed at a high film formation rate while suppressing damage to the substrate Z and generation of emission gas derived from the substrate.

  There are no particular limitations on the film formation conditions by the second target Tg-2, such as the power supplied to the second cathode 46 (output of the second power supply 54), and the film thickness by the first target Tg-1 (first target). The conditions for obtaining the target film thickness by the film formation in the film formation chamber 16 may be appropriately set according to the target film thickness by Tg-1.

  Here, in the film forming chamber 16 in the illustrated example, as a preferred mode, the film forming chamber 16 includes a film thickness detecting unit 60 that detects the film thickness of the first target Tg-1, and the control unit 62 is based on the film thickness detecting unit 60. In accordance with the detection result, the power supplied to the second cathode 46 holding the second target Tg-2, that is, the driving of the second power supply 54 is controlled.

As described above, in the present invention, the gas detection means 58 detects the emitted gas derived from the substrate, and controls the driving of the first electrode 42 according to the detection result.
Therefore, in the film formation by the first target Tg-1, since the voltage for film formation fluctuates, the film thickness (film formation thickness) of the film to be formed is not necessarily constant, and the emission gas derived from the substrate. Depending on the release state of the film, that is, the state of the substrate Z, the components remaining in the film forming chamber 16, the installation environment of the film forming apparatus 10, and the like.

On the other hand, in the illustrated film forming chamber 16, the film thickness detection means 60 detects the film thickness of the first target Tg-1, and the control means 62 determines the purpose according to the film thickness detection result. The power to the second target Tg-2 (power supplied to the second cathode 46) is controlled so that a film having a film thickness (target film thickness that the film forming apparatus 10 forms) can be formed. That is, the control unit 62 feedback-controls the driving of the second power supply 54 according to the film thickness detection result by the film thickness detection unit 60 so that a film having the target film thickness can be formed.
Thereby, in the film formation chamber 16, a film having a target thickness is stably formed regardless of the film formation thickness by the first target Tg-1 in which the supply power varies according to the amount of the gas derived from the substrate. Can be membrane.

In the film forming chamber 16 in the illustrated example, the control unit 62 controls the driving of the second power source 54 according to the detection result of the film forming thickness by the first target Tg-1 by the film thickness detecting unit 60. However, the present invention is not limited to this.
For example, depending on the detection result of the film thickness by the first target Tg-1 by the film thickness detection means 60, the supply amount of the reaction gas and / or the discharge gas by the gas supply means 56 in addition to the drive of the second power source 54 is set. Alternatively, the supply amount of the reaction gas and / or the discharge gas by the gas supply means 56 may be controlled in place of the drive control of the second power source 54.

There is no particular limitation on the film formed in the film formation chamber 16, and any film that can be formed by (reactive) sputtering can be formed.
For example, when manufacturing a gas barrier film (water vapor barrier film), a silicon nitride film, an aluminum oxide film, a silicon oxide film, or the like may be formed. When manufacturing protective films for various devices and devices such as display devices such as organic EL displays and liquid crystal displays, a silicon oxide film or the like may be formed. Furthermore, when manufacturing an optical film such as a light reflection preventing film, a light reflection film, or an optical filter, a film made of a material having or exhibiting the desired optical characteristics may be formed.
As described above, according to the present invention, the increase in the surface roughness of the substrate Z can be suppressed, and the deterioration of the film quality due to the emission gas derived from the substrate can be prevented, so that substrate smoothness and denseness are required. It is particularly suitable for the production of a gas barrier film (deposition of a gas barrier film).

Further, a known material may be used for the target, the reaction gas, and the discharge gas depending on the film to be formed.
For example, in the case of forming an aluminum oxide film, aluminum may be used as a target, oxygen gas may be used as a reaction gas, and argon gas may be used as a discharge gas, and a silicon oxide film may be formed. For example, silicon may be used as the target, oxygen gas as the reaction gas, and argon gas as the discharge gas.

  In addition, the film forming method is not limited to the reactive sputtering in the illustrated example, and any film forming by various known sputtering methods such as normal sputtering and magnetron sputtering can be used.

The film thickness of the film formed in the film forming chamber 16 is not particularly limited, and satisfies the required characteristics and performance according to the film to be formed, depending on the use of the substrate Z on which the film is formed. What is necessary is just to set the film thickness to perform suitably.
In addition to the control of the first power source 52 in accordance with the emission gas derived from the substrate as described above, or in addition to the control of the second power source 54 in accordance with the film thickness of the first target Tg-1, film forming conditions are used. There is no particular limitation, and it may be set as appropriate according to the type of film to be formed, the type of target or reaction gas used, the target film thickness, the required film formation rate, and the like.

The substrate Z on which film formation by reactive sputtering is performed by the first target Tg-1 and the second target Tg-2 while being supported / conveyed by the drum 40 separates the film formation chamber 16 and the winding chamber 18 from each other. From the slit 65 a formed in the partition wall 65, it is conveyed to the winding chamber 18.
The substrate Z transported to the winding chamber 18 is guided along a predetermined path by the guide roller 68, transported to the winding shaft 30, and wound into a roll shape by the winding shaft 30 as a functional film roll. Provided to the process. Further, in the film forming apparatus 10 shown in the drawing, as a preferred mode, the evacuation unit 70 is also disposed in the winding chamber 18, and the winding chamber 18 also corresponds to the film forming pressure in the film forming chamber 16 during film formation. The pressure is reduced to a certain degree of vacuum.

FIG. 2 conceptually shows an example of a film forming apparatus for carrying out the second aspect of the film forming method of the present invention.
2 has basically the same configuration as the film forming apparatus 10 shown in FIG. 1 except that a part of the configuration of the film forming chamber 82 is different. Are denoted by the same reference numerals, and the following description will mainly focus on different parts.

As described above, in the film forming apparatus 10, the amount of gas emitted from the substrate in the film forming chamber 16 is 1% or less of the amount of discharge gas in accordance with the detection result by the gas detecting means 58. As described above, the drive of the first power source 52 (power for the first target Tg-1) is feedback-controlled.
On the other hand, the film forming apparatus 80 shown in FIG. 2 measures the surface roughness of the substrate Z before and after film formation by the first target Tg-1 in the film forming chamber 82, and according to the measurement result, the control means 84 performs feedback control of driving of the first power supply 52.

  As shown in FIG. 2, the film formation chamber 82 of the film formation apparatus 80 measures the (center line average) surface roughness Ra (hereinafter referred to as Ra-a) of the substrate Z instead of the gas detection means 58. Substrate roughness measuring means 86 and roughness measuring means 88 for measuring the surface roughness Ra (hereinafter referred to as Ra-b) of the substrate Z after film formation by the first target Tg-1.

The substrate roughness measuring means 86 and the roughness measuring means 88 are not particularly limited, and are roughness measuring means using an AFM (atomic force microscope) and roughness using GIXR (X-ray reflectivity measurement). Any known measuring means can be used as long as it can measure the surface roughness Ra of the conveyed sheet-like material.
Further, the substrate roughness measuring means 86 may be arranged in the supply chamber 12 or the like as long as the surface roughness Ra of the substrate Z before the film formation by the most upstream first target Tg-1 can be measured. . Alternatively, the surface roughness Ra of an arbitrary part of the substrate Z of the substrate roll 20 is measured (any average value of a plurality of points is acceptable), and this is the substrate before film formation by the first target Tg-1. The surface roughness Ra-a of Z may be considered.

The measurement result of the surface roughness Ra-a of the substrate Z by the substrate roughness measuring means 86 and the surface roughness Ra- of the substrate Z after the film formation by the first target Tg-1 by the roughness measuring means 88 is performed. The measurement result of b is sent to the control means 84.
The control means 84 determines that Ra-a / Ra-b is less than 1.2 (Ra-a / Ra-b <1.2) from the supplied surface roughness Ra-a and Ra-b. Supply power corresponding to the first target Tg-1 (supply power to the first cathode 42), that is, driving of the first power supply 52 is controlled.

  As described above, in the film forming chamber 16 of the film forming apparatus 10 shown in FIG. 1, the actual state of etching of the substrate Z is detected by detecting the amount of released gas derived from the substrate with respect to the amount of discharge gas. By controlling the driving of the first power supply 52 so that the amount of gas emitted from the substrate relative to the amount of gas is 0.1% or less, etching of the substrate Z and generation of discharge gas derived from the substrate are suppressed. .

  On the other hand, the film formation chamber 82 of the film formation apparatus 80 in the illustrated example actually detects the surface roughness Ra-a and Ra-b before and after the film formation by the first target Tg-1, thereby actually performing the film formation. The damage actually received by the substrate Z by the film formation with the first target Tg-1, such as the state of etching of the substrate Z that has occurred, is detected so that Ra-a / Ra-b is less than 1.2. In addition, the drive of the first power supply 52 is controlled, that is, the drive of the first power supply 52 is controlled so that the damage actually received by the substrate Z is not more than a predetermined state.

  Therefore, even with this film forming apparatus 80, the substrate Z can be stably formed regardless of the type and state of the substrate, the installation environment of the apparatus, the state of the film forming chamber, the film forming conditions such as the film forming speed and the film forming pressure. Etching, generation of emission gas derived from the substrate, and damage to the substrate Z can be suppressed. As a result, according to the present invention, it is possible to stably manufacture a high-quality product that sufficiently suppresses an increase in substrate surface roughness, a decrease in film quality due to the released gas, and the like.

Although omitted in FIG. 2 for simplification of the drawing, the film forming apparatus 80 shown in FIG. 2 also has a first target Tg-1 as a preferred embodiment as in the case of the film forming apparatus 10 described above. The film thickness measuring means 60 for measuring the film thickness of the film formed by the above-mentioned method is provided, and the control means 62 forms a film having a target film thickness in accordance with the film thickness measurement result by the film thickness measuring means 60. The driving of the second power source 52 is controlled.
Here, the position of the film thickness measuring means 60 may be upstream or downstream of the roughness measuring means.

  As described above, the film forming method and the film forming apparatus of the present invention have been described in detail. However, the present invention is not limited to the above embodiments, and various improvements and modifications are made without departing from the gist of the present invention. Of course, it's also good.

  Hereinafter, the present invention will be described in more detail with reference to specific examples of the present invention.

[Example 1]
As the substrate Z, a long PET film (polyethylene terephthalate film) having a width of 600 mm and a thickness of 100 μm was prepared.
The substrate Z (the substrate roll 20 formed by winding the substrate Z) is loaded into the film forming apparatus 10 shown in FIG. 1 and inserted through a predetermined transport path, and the film forming apparatus 10 applies reactive sputtering to the substrate Z. Then, an aluminum oxide film was formed.

The substrate transfer speed was fixed at 1 m / min throughout the film forming apparatus 10.
The processing conditions in the pretreatment chamber 14 were a pressure of 3 × 10 ⁻⁵ Pa and a heating temperature by the heating means 38a and 38b of 100 ° C.
The pressure in the supply chamber 12 was also set to the same 3 × 10 ⁻⁵ Pa by the vacuum exhaust means 28.

For both the first target Tg-1 and the second target Tg-2, metallic aluminum was used.
The film formation chamber 16 is evacuated to 1 × 10 ⁻⁴ Pa by the vacuum evacuation means 64, and then supplied from the gas supply means 56 with oxygen gas at a flow rate of 200 sccm as a reaction gas and argon gas as a discharge gas at a flow rate of 50 sccm, The pressure in the film forming chamber 16 was adjusted to 1.5 × 10 ⁻¹ Pa (that is, the film forming pressure was 1.5 × 10 ⁻¹ Pa) by adjusting the evacuation by the vacuum exhaust means 64.
The pressure in the winding chamber 18 was also evacuated by the vacuum evacuation means 70 so as to be the same 1.5 × 10 ⁻¹ Pa.

Further, the control means 62 adjusts the amount of the gas derived from the substrate in the film forming chamber 16 to be constant at 0.5% with respect to the amount of argon gas in accordance with the detection result by the gas detection means 58 (substrate). The drive of the first electrode 52 was feedback-controlled so that the derived discharge gas partial pressure was constant at 0.5% with respect to the argon gas partial pressure.
As the gas detection means 58, a mass spectrometer (Prisma QMS200 manufactured by Q-Mass PFEIFFER Vacuum) was used.
The amount of power for the second target Tg-2 (power supplied to the second cathode 46) was constant at 3 kW and 400V.

Under the above conditions, an aluminum oxide film was formed on the substrate Z (PET film) 1000 m by reactive sputtering.
In addition, as a result of controlling the driving of the first power source 52 so that the amount of gas emitted from the substrate is constant at 0.5% with respect to the amount of argon gas, the output of the first electrode 52 (first cathode) during film formation. The power supplied to 42) fluctuated between 2.2 to 2.4 kW and 250 to 280V.

An arbitrary region was selected from the substrate Z on which the aluminum oxide film was formed, and the water vapor permeability at 40 ° C./90% relative humidity was measured by the calcium method. As a result, the water vapor transmission rate was 0.0008 [g / m ² / day / atm].
Further, the substrate Z on which the aluminum oxide film was formed was cut out every 100 m and sampled, and the film thickness was measured by an XRF film thickness inspection device (ZSX Primus manufactured by Rigaku) to calculate the film thickness variation. As a result, the film thickness variation was 22 ± 5 nm.

[Example 2]
Except for controlling the driving of the second electrode 54 so that the film thickness of the aluminum oxide film formed in the film forming chamber 16 becomes 22 nm according to the film thickness measurement result by the film thickness measuring means 60, the above-described embodiment. In the same manner as in No. 1, an aluminum oxide film was formed on the substrate Z (PET film) by reactive sputtering.
As the film thickness measuring means 60, the same XRF film thickness inspection apparatus as in Example 1 was used. This device is a device capable of measuring the film thickness in-line.
As a result of the feedback control of the second power source 54, the output of the second power source 54 during film formation fluctuated between 2.95 to 3.25 kW and 380 to 410V.
Further, as a result of the feedback control of the first power supply 52, the output of the first power supply 52 during film formation varied between 2.2 to 2.4 kW and 250 to 280 V, as in the first embodiment.
The substrate Z on which the aluminum oxide film was formed was measured for water vapor transmission rate and film thickness variation in the same manner as in Example 1. As a result, the water vapor transmission rate was 0.0002 [g / m ² / day / atm], and the film thickness variation Was 22 ± 1.5 nm.

[Comparative Example 1]
An aluminum oxide film was formed on the substrate Z (PET film) by reactive sputtering in the same manner as in Example 1 except that the output of the first power supply 52 was fixed at 2.2 kW and 280 V.
The substrate Z on which the aluminum oxide film was formed was measured for water vapor transmission rate and film thickness variation in the same manner as in Example 1. As a result, the water vapor transmission rate was 0.0035 [g / m ² / day / atm], and the film thickness variation Was 22 ± 3 nm.

上記表に示されるように、本発明によれば、反応性スパッタリングでの基板エッチングに起因する、基板Ｚの表面粗さの増加や、基板由来の放出ガスが膜中に取り込まれることによる膜質の低下を好適に抑制できるので、従来の成膜方法である比較例１に比して、非常に良好なガスバリア性（水蒸気バリア性）を得ることができている。
また、第１ターゲットＴｇ−１による成膜厚に応じて、第２カソード４６への供給電力を制御する実施例２では、膜厚変動も少なく、高品質な成膜が行なわれている。
以上の結果より、本発明の効果は明らかである。 The above results are shown in the following table.

As shown in the above table, according to the present invention, the increase in the surface roughness of the substrate Z due to the substrate etching in the reactive sputtering and the film quality due to the incorporation of the emitted gas derived from the substrate into the film. Since the decrease can be suitably suppressed, a very good gas barrier property (water vapor barrier property) can be obtained as compared with Comparative Example 1 which is a conventional film forming method.
Further, in Example 2 in which the power supplied to the second cathode 46 is controlled according to the film thickness of the first target Tg-1, there is little film thickness fluctuation, and high quality film formation is performed.
From the above results, the effects of the present invention are clear.

It is a figure which shows notionally an example of the film-forming apparatus of the 1st aspect of this invention. It is a figure which shows notionally an example of the film-forming apparatus of the 2nd aspect of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10,80 Film-forming apparatus 12 Supply chamber 14 Degassing chamber 16,82 Film-forming chamber 18 Winding chamber 20 Substrate roll 24 Rotating shaft 26, 48, 50, 68 Guide roll 28, 34, 64, 70 Vacuum exhaust means 30 windings Picking shaft 36a, 36b Conveying roller pair 28a, 38b Heating means 40 Drum 42 First cathode 46 Second cathode 52 First power supply 54 Second power supply 56 Gas supply means 58 Gas detection means 60 Film thickness detection means 62 Control means 86 Substrate rough Thickness measuring means 88 roughness measuring means Tg-1 first target Tg-2 second target Z substrate

Claims (8)

In carrying out film formation on the surface of the substrate by sputtering while transporting the substrate,
A plurality of targets are provided in the substrate transport direction, and the amount of gas in the film forming system is measured. According to the measurement result, the amount of released gas derived from the substrate component is 1% or less of the amount of discharge gas. The film forming method is characterized in that the power to the most upstream target in the substrate transport direction is adjusted so that   A target other than the most upstream target in the substrate transport direction is formed so as to detect the film thickness of the most upstream target in the substrate transport direction and form a film having a target thickness according to the detection result. The film-forming method of Claim 1 which adjusts the electric power supplied to the electrode with respect to.   The film forming method according to claim 1, wherein a gas barrier film is formed.   The film forming method according to claim 1, wherein a DC pulse power source is used as a power source for performing sputtering. A film forming apparatus for forming a film on a long substrate by sputtering,
A transporting means for transporting the substrate in the longitudinal direction; a plurality of target holding means arranged in the transporting direction of the substrate for holding the target; an electrode corresponding to the target held by the target holding means; and the electrode Power supply means for supplying power for sputtering, and gas supply means for supplying discharge gas into the film forming system,
Gas measuring means for measuring the amount of gas in the film forming system, and the amount of released gas derived from the component of the substrate is 1% or less of the amount of the discharge gas according to the measurement result by the gas measuring means. As described above, the film forming apparatus further includes a control unit that adjusts the power supplied to the electrode with respect to the most upstream target in the substrate transport direction by the power supply unit. A film thickness detecting means for detecting a film thickness by a target located at the uppermost stream in the substrate transport direction;
The control means is configured so that the power supply means is positioned at the most upstream in the substrate transport direction so as to form a film having a target thickness according to the film thickness measurement result by the film thickness measurement means. The film-forming apparatus of Claim 5 which adjusts the electric power supplied to the said electrode with respect to targets other than.   The film forming apparatus according to claim 5, wherein the power supply unit is a DC pulse power source. In carrying out film formation on the surface of the substrate by sputtering while transporting the substrate,
A plurality of targets are provided in the substrate transport direction, the surface roughness Ra-a of the substrate before film formation, and the surface roughness Ra- after film formation by the most upstream target in the substrate transport direction. b is detected, and the power for the most upstream target in the substrate transport direction is adjusted so that Ra-a / Ra-b is less than 1.2.

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