JP2010001247A - Method of treating trialkyl indium and method of recovering indium sludge obtained by above treatment - Google Patents
Method of treating trialkyl indium and method of recovering indium sludge obtained by above treatment Download PDFInfo
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- JP2010001247A JP2010001247A JP2008161464A JP2008161464A JP2010001247A JP 2010001247 A JP2010001247 A JP 2010001247A JP 2008161464 A JP2008161464 A JP 2008161464A JP 2008161464 A JP2008161464 A JP 2008161464A JP 2010001247 A JP2010001247 A JP 2010001247A
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Abstract
Description
本発明は、トリアルキルインジウムの処理方法及び当該処理によって得られたインジウム汚泥を回収する方法に関する。トリアルキルインジウムは、高純度品においては半導体成膜として有用な化合物であり、その製造過程において副生するインジウム汚泥を回収することは、資源の有効利用ともなり得る。 The present invention relates to a method for treating trialkylindium and a method for recovering indium sludge obtained by the treatment. Trialkylindium is a useful compound for semiconductor film formation in high-purity products, and recovery of indium sludge produced as a by-product in the manufacturing process can be an effective use of resources.
半導体成膜材料等として用途があるトリアルキルインジウムは有用な化合物であるが、空気中の空気や水分と爆発的に反応する化合物であることから、その製造や取り扱いについては十分な注意を払う必要がある。特に、高い性能を有する高純度トリアルキルインジウムは、その製造過程において生じるトリアルキルインジウムを含有する初留分や釜残(以下、インジウム廃棄物と称する)であったとしても、その処理方法(例えば、トリアルキルインジウムを分解して酸化インジウムとする、トリアルキルインジウムと水と接触させることにより水酸化インジウムとする等)には十分に注意が必要である。更に、副生するインジウム汚泥(酸化インジウムや水酸化インジウム等)を回収することで、環境上及び経済的なメリットがあると十分に考えられる。
従来、例えば、鉛とインジウムとを含有する溶液へ活性炭を添加し鉛を吸着させる工程と、当該溶液中へ、当該溶液中に残留する鉛を硫化するに足る量の硫化剤を添加し、当該残留する鉛を硫化物として除去する工程と、当該鉛の硫化物を除去した溶液からインジウムを採取する工程と、を有することを特徴とするインジウム含有溶液の処理方法が開示されていた(例えば、特許文献1参照)。
しかしながら、トリアルキルインジウム廃棄物の安全な処理方法及びインジウム汚泥の回収方法については、特段優れた技術はなく、現実的には廃棄業者が引き取って埋め立て処理をしているというのが現状である。
Conventionally, for example, a step of adding activated carbon to a solution containing lead and indium to adsorb lead, and adding a sulphurizing agent in an amount sufficient to sulfidize lead remaining in the solution, There has been disclosed a method for treating an indium-containing solution characterized by having a step of removing residual lead as sulfide and a step of collecting indium from the solution from which the lead sulfide has been removed (for example, Patent Document 1).
However, there is no particularly excellent technique for the safe treatment method of trialkylindium waste and the recovery method of indium sludge, and the actual situation is that the waste disposal company actually takes the landfill treatment.
本発明の課題は、即ち、安全且つ簡便な方法にて、インジウム廃棄物を処理し、インジウム汚泥を回収することが可能な工業的に採用できる方法を提供することにある。 An object of the present invention is to provide an industrially adoptable method capable of treating indium waste and recovering indium sludge by a safe and simple method.
本発明の課題は、トリアルキルインジウムの後処理方法であって、トリアルキルインジウムを炭化水素溶媒に溶解させた後、酸素と接触させることを特徴とする、トリアルキルインジウムの処理方法によって解決される。又、本発明は、当該処理溶液から炭化水素溶媒を除去することによるインジウム汚泥の回収方法によっても解決される。 The object of the present invention is solved by a method for treating trialkylindium, characterized by dissolving trialkylindium in a hydrocarbon solvent and then contacting with oxygen. . The present invention is also solved by a method for recovering indium sludge by removing a hydrocarbon solvent from the treatment solution.
本発明により、安全且つ簡便な方法にて、インジウム廃棄物を処理し、インジウム汚泥を回収することが可能な工業的に採用できる方法を提供することにある。 An object of the present invention is to provide an industrially adoptable method capable of treating indium waste and recovering indium sludge by a safe and simple method.
本発明において使用するトリアルキルインジウムとしては、例えば、トリメチルインジウム、トリエチルインジウム等が挙げられるが、これらの中に少量のハロゲン化物(例えば、ジアルキルハロゲノインジウムやトリハロゲノインジウム等)を含んでいても良い。 Examples of the trialkylindium used in the present invention include trimethylindium and triethylindium, and a small amount of a halide (for example, dialkylhalogenoindium and trihalogenoindium) may be included therein. .
本発明で使用するトリアルキルインジウムを溶解させる炭化水素溶媒としては、トリアルキルインジウムと反応しない溶媒ならば特に限定されず、例えば、ペンタン、ヘキサン、ヘプタン、オクタン、シクロヘキサン、シクロヘプタン、シクロオクタン等の脂肪族炭化水素類;ベンゼン、トルエン、キシレン(各種異性体を含む)等の芳香族炭化水素類が使用されるが、好ましくは芳香族炭化水素類、更に好ましくはトルエン、キシレンが使用される。なお、これらの有機溶媒は単独又は二種以上を混合して使用しても良い。 The hydrocarbon solvent for dissolving trialkylindium used in the present invention is not particularly limited as long as it does not react with trialkylindium. For example, pentane, hexane, heptane, octane, cyclohexane, cycloheptane, cyclooctane and the like Aliphatic hydrocarbons; aromatic hydrocarbons such as benzene, toluene and xylene (including various isomers) are used, preferably aromatic hydrocarbons, more preferably toluene and xylene. In addition, you may use these organic solvents individually or in mixture of 2 or more types.
前記有機溶媒の使用量は、トリアルキルインジウムを実質的に溶解させる量ならば特に制限されず、有機溶媒の種類により適宜決定する。 The amount of the organic solvent used is not particularly limited as long as it can dissolve trialkylindium substantially, and is appropriately determined depending on the type of the organic solvent.
本発明ではトリアルキルインジウムと酸素とを接触させるが、その接触をさせる方法は特に限定されるものではなく、大気中に放置することによる方法が酸化分解反応をゆるやかに進めるために好適に採用されるが、酸素含有ガス(例えば、空気)をバブリングさせることによって酸化分解を促進させることもできる。 In the present invention, trialkylindium and oxygen are brought into contact with each other, but the method for bringing them into contact with each other is not particularly limited, and a method of leaving in the atmosphere is suitably employed for slowly proceeding the oxidative decomposition reaction. However, oxidative decomposition can be promoted by bubbling an oxygen-containing gas (for example, air).
有機溶媒中のトリアルキルインジウムと酸素とを接触させることによってトリメチルインジウムがインジウム汚泥に変換されるが、当該酸化分解反応を促進するために水を加えても良い。その際の温度は特に制限されず、通常は室温で行うが、反応熱により溶液の温度上昇が確認される場合もある。 Trimethylindium is converted into indium sludge by bringing trialkylindium in an organic solvent into contact with oxygen, but water may be added to accelerate the oxidative decomposition reaction. The temperature at that time is not particularly limited, and it is usually performed at room temperature, but the temperature rise of the solution may be confirmed by reaction heat.
前記インジウム汚泥とは、酸化インジウム、水酸化インジウム又はそれらの混合物を示すが、水との接触が実質的にない場合には酸化インジウムが優先して生成し、水との接触がある場合には水酸化インジウムが優先して生成する。但し、完全な非水系で行うことや完全な無酸素系で行うことは困難であるので、酸化インジウムと水酸化インジウムの混合物となることはしばしばある。 The indium sludge indicates indium oxide, indium hydroxide or a mixture thereof, but in the case where there is substantially no contact with water, indium oxide is preferentially generated, and when there is contact with water. Indium hydroxide is preferentially produced. However, since it is difficult to perform completely non-aqueous or completely oxygen-free system, it often becomes a mixture of indium oxide and indium hydroxide.
なお、これらの後処理、回収等は、全て工場敷地内の安全な場所において行われ、人為的ミスが生じないルールやマニュアルも徹底していることにより、実施に際しては特段の問題はない。 These post-treatments, collections, etc. are all performed in a safe place on the factory premises, and there are no particular problems during implementation because of the thorough rules and manuals that do not cause human error.
次に、実施例を挙げて本発明を具体的に説明するが、本発明の範囲はこれらに限定されるものではない。 Next, the present invention will be specifically described with reference to examples, but the scope of the present invention is not limited thereto.
実施例1(トリメチルインジウムの後処理及びインジウム汚泥の回収)
トリメチルインジウムを主成分とする溶液を蒸留して高純度トリメチルインジウムを取得するに当たり、初留分82gを初留受器に留出させた後、高純度トリメチルインジウムを含む主留分を留出させた。蒸留後、釜残としてトリメチルインジウムを含む溶液を90g得た。初留分及び釜残を併せたインジウム廃棄物172gを得た。これをキシレン1.2Lに溶解させた後、安全な場所において大気中に放置して空気と接触させ、含有するトリメチルインジウムをインジウム汚泥とし、キシレンを除去してインジウム汚泥を得た(当該汚泥は主として酸化インジウムを含有する)。得られたインジウム汚泥は大気中に暴露しても特段変化しなかった。
Example 1 (Aftertreatment of trimethylindium and recovery of indium sludge)
In order to obtain high purity trimethylindium by distilling a solution containing trimethylindium as a main component, 82 g of the first fraction was distilled to the first fraction receiver, and then the main fraction containing high purity trimethylindium was distilled. It was. After distillation, 90 g of a solution containing trimethylindium as a residue was obtained. 172 g of indium waste combined with the first fraction and the residue was obtained. After this was dissolved in 1.2 L of xylene, it was left in the atmosphere in a safe place and contacted with air, trimethylindium contained therein was converted into indium sludge, and xylene was removed to obtain indium sludge (the sludge is Mainly contains indium oxide). The indium sludge obtained did not change particularly even when exposed to the atmosphere.
実施例2(トリメチルインジウムの後処理及びインジウム汚泥の回収)
トリメチルインジウムを主成分とする溶液を蒸留して高純度トリメチルインジウムを取得するに当たり、初留分60gを初留受器に留出させた後、高純度トリメチルインジウムを含む主留を留出させた。蒸留後、釜残としてトリメチルインジウムを含む溶液を80g得た。初留分及び釜残を併せたインジウム廃棄物140gを得た。これをキシレン1.2Lに溶解させた後、水150mlをゆるやかに加えて、含有するトリメチルインジウムをインジウム汚泥とし、有機溶媒を除去してインジウム汚泥を得た(当該汚泥は主として水酸化インジウムを含有する)。得られたインジウム汚泥は大気中に暴露しても特段変化しなかった。
Example 2 (Aftertreatment of trimethylindium and recovery of indium sludge)
In obtaining a high-purity trimethylindium by distilling a solution containing trimethylindium as a main component, 60 g of an initial fraction was distilled to an initial fraction receiver, and then a main fraction containing high-purity trimethylindium was distilled. . After distillation, 80 g of a solution containing trimethylindium as a residue was obtained. The indium waste 140g which combined the first fraction and the kettle residue was obtained. After dissolving this in 1.2 L of xylene, 150 ml of water was slowly added to make trimethylindium contained therein as indium sludge, and the organic solvent was removed to obtain indium sludge (the sludge mainly contains indium hydroxide). To do). The indium sludge obtained did not change particularly even when exposed to the atmosphere.
本発明により、安全且つ簡便な方法にて、インジウム廃棄物を処理し、インジウム汚泥を回収することが可能な工業的に採用できる方法を提供することにある。 An object of the present invention is to provide an industrially adoptable method capable of treating indium waste and recovering indium sludge by a safe and simple method.
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EP3173507A1 (en) * | 2015-11-25 | 2017-05-31 | Umicore AG & Co. KG | Method for the organometallic gas phase deposition under use of solutions of indiumalkyl compounds in hydrocarbons |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH01100178A (en) * | 1987-10-12 | 1989-04-18 | Nippon Mining Co Ltd | Method for purifying trialkylindium |
JPH04139005A (en) * | 1990-09-28 | 1992-05-13 | Toshiba Corp | Production of inorganic thin film |
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JPH01100178A (en) * | 1987-10-12 | 1989-04-18 | Nippon Mining Co Ltd | Method for purifying trialkylindium |
JPH04139005A (en) * | 1990-09-28 | 1992-05-13 | Toshiba Corp | Production of inorganic thin film |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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EP3173507A1 (en) * | 2015-11-25 | 2017-05-31 | Umicore AG & Co. KG | Method for the organometallic gas phase deposition under use of solutions of indiumalkyl compounds in hydrocarbons |
WO2017089477A1 (en) * | 2015-11-25 | 2017-06-01 | Umicore Ag & Co. Kg | Methods for metal-organic chemical vapour deposition using solutions of indium-alkyl compounds in hydrocarbons |
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