JP2009301965A - Organic light-emitting device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an organic light-emitting device capable of reducing consumption power due to wiring resistance by reducing the wiring resistance of an upper transparent electrode. <P>SOLUTION: The organic light-emitting device includes an organic light-emitting element having a lower reflecting electrode 4, hole transporting layer 7, white luminous layer 8, electron transporting layer 9, electron injecting layer 10, and upper transparent electrode 11 arranged on a metal substrate 2. The upper transparent electrode 11 is connected electrically to the metal substrate 2 through a connecting electrode 5 of a contact hole 12. Thereby, wiring resistance by the upper transparent electrode 11 is reduced and consumption power is reduced. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to an organic light-emitting device having a top emission structure, and in particular, the resistance of an upper transparent electrode constituting a self-emitting organic electroluminescent element (hereinafter referred to as an organic light-emitting element) disposed on a conductive substrate is reduced. It relates to a possible organic light emitting device.

  The organic light emitting device is expected as a lighting device for a thin illumination device, a thin display device, and a liquid crystal display device, for example, and includes a plurality of organic light emitting elements that constitute pixels on a substrate. The organic light emitting device has a structure in which a plurality of organic layers are sandwiched between a lower electrode and an upper electrode. The organic layer has a hole transport layer that transports holes, an electron transport layer that transports electrons, and a light-emitting layer that recombines holes and electrons, and a voltage is applied between the electrodes. Thus, holes and electrons injected from the electrodes recombine in the light emitting layer to emit light.

  For example, Patent Document 1 describes an organic light-emitting device using a lower electrode that transmits light emitted in a stripe shape and an upper electrode that serves as a common electrode. Either one of the electrodes is a transparent electrode. The lower electrode is supplied with electric power from both ends, and reduces luminance unevenness. When the lower electrode is a transparent electrode, since the specific resistance is high, even if power is supplied from both ends, a voltage drop due to wiring resistance occurs at the center of the organic light emitting device, resulting in high power consumption. In addition, when the upper electrode is a transparent electrode, a voltage drop due to wiring resistance occurs at the center of the organic light emitting device, resulting in high power consumption.

JP 2007-173519 A

  An object of the present invention is to provide an organic light emitting device capable of reducing power consumption due to wiring resistance by lowering wiring resistance of an upper electrode (upper transparent electrode) that transmits emitted light.

  That is, the organic light-emitting device according to an aspect of the present invention includes an organic light-emitting device in which an organic light-emitting element having a lower reflective electrode, an organic layer, and an upper transparent electrode is disposed on a conductive substrate, wherein the upper transparent electrode It is characterized by being connected to the conductive substrate through a contact hole arranged around the reflective electrode.

  An organic light emitting device according to another aspect of the present invention is an organic light emitting device in which an organic light emitting element having an organic layer and an upper transparent electrode is disposed on a conductive substrate, wherein the conductive substrate is a reflective property of emitted light. It functions as a reflective electrode having

  According to the present invention, it is possible to reduce the power consumption due to the wiring resistance by lowering the wiring resistance of the upper transparent electrode.

  Hereinafter, an organic light emitting device according to an embodiment of the present invention will be described with reference to the drawings.

  An organic light-emitting device according to Example 1 will be described. FIG. 1 is a cross-sectional view of the organic light emitting device according to the first embodiment. FIG. 2 is a plan view of the organic light emitting device shown in FIG.

  In the organic light emitting device, an organic light emitting element is disposed on a metal substrate 2. The organic light emitting device includes, in order from the metal substrate 2 side, a lower reflective electrode 4 serving as an anode, a hole transport layer 7, a white light emitting layer 8, an electron transport layer 9, an electron injection layer 10, and an upper portion serving as a cathode. And a transparent electrode 11. If necessary, a hole injection layer may be disposed between the lower reflective electrode 4 and the hole transport layer 7. Further, the hole transport layer 7 and the electron transport layer 9 may also serve as the white light emitting layer 8.

  The upper transparent electrode 11 is a transparent electrode having a light transmission property. The lower reflective electrode 4 is a reflective electrode having reflectivity of emitted light.

A sealing substrate 14 is disposed on the organic light emitting element. The sealing substrate 14 is formed on the upper transparent electrode 11. The sealing substrate 14 makes it difficult for H ₂ O and O ₂ in the atmosphere to enter the upper transparent electrode 11 or the organic layer (hole transport layer 7, electron transport layer 9 and white light emitting layer 8) below the upper transparent electrode 11. is there. The sealing substrate 14, for example SiO _2, SiNx, inorganic materials and polychloroprene such as Al ₂ O _3, polyethylene terephthalate, polyoxymethylene, polyvinyl chloride, polyvinylidene fluoride, cyanoethyl pullulan, polymethylmethacrylate, polysulfone, polycarbonate, An organic material such as polyimide can be used.

An acrylic insulating film having a thickness of 2 μm is formed as a first interlayer insulating film 3 on the metal substrate 2 coated with the insulating film 1. In this embodiment, an acrylic insulating film is used as the first interlayer insulating film 3, but other than this, for example, polychloropyrene, polyethylene terephthalate, polyoxymethylene, polyvinyl chloride, polyvinylidene fluoride, cyanoethyl pullulan, polymethyl methacrylate, Organic insulating materials such as polysulfone, polycarbonate, and polyimide, and inorganic materials such as SiO ₂ , SiNx, and Al ₂ O ₃ can be used, and these may be used alone or in combination of two or more. For example, an inorganic insulating film may be stacked on the organic insulating film.

  The metal substrate 2 is a conductive substrate, and applies a voltage to the organic light emitting element (the lower reflective electrode 4, the hole transport layer 7, the white light emitting layer 8, the electron transport layer 9, the electron injection layer 10, and the upper transparent electrode 11). It functions as an auxiliary wiring for applying, or a reflective electrode having reflectivity of emitted light. The metal substrate 2 may be a conductive substrate, and examples thereof include metals such as aluminum, indium, molybdenum, nickel, copper, and iron, and alloys thereof.

  The insulating film 1 insulates the metal substrate 2 to which a voltage is applied. Examples of the insulating film 1 include organic insulating materials such as acrylic, polychloropyrene, polyethylene terephthalate, polyoxymethylene, polyvinyl chloride, polyvinylidene fluoride, cyanoethyl pullulan, polymethyl methacrylate, polysulfone, polycarbonate, and polyimide.

  Next, a plurality of contact holes 12 are provided in the first interlayer insulating film 3. A 150 nm Al film is disposed on the first interlayer insulating film 3 to form the lower reflective electrode 4 and the connection electrode 5. In this embodiment, an Al film is used as the lower reflective electrode 4, but the present invention is not limited to this. For example, metals such as indium, molybdenum, nickel, alloys thereof, polysilicon, amorphous silicon inorganic materials, the above metals or A laminated film in which a transparent conductive film such as tin oxide, indium oxide, indium / tin oxide (ITO) is formed on the alloy is preferable.

  In the present embodiment, the lower reflective electrode 4 and the connection electrode 5 are formed of the same Al film, but may be made of different materials. For example, the lower reflective electrode 4 may be formed of a laminated film of an Al film and an In—Sn—O film (hereinafter referred to as an ITO film), and the connection electrode 5 may be formed of an ITO film. In addition, it may be formed using a completely different metal film.

Next, a second interlayer insulating film 6 is formed in order to hide the edges of the lower reflection electrode 4 and the connection electrode 5. The second interlayer insulating film 6 is also an acrylic insulating film, but is not limited to this. For example, polychloropyrene, polyethylene terephthalate, polyoxymethylene, polyvinyl chloride, polyvinylidene fluoride, cyanoethyl pullulan, polymethyl methacrylate. Organic insulating materials such as polysulfone, polycarbonate, and polyimide, and inorganic materials such as SiO ₂ , SiNx, and Al ₂ O ₃ can be used. Further, a configuration in which an inorganic insulating film is stacked on an organic insulating film is also possible.

  Next, a deposited film of 4,4-bis [N- (1-naphthyl) -N-phenylamino] biphenyl (hereinafter referred to as α-NPD) having a film thickness of 50 nm is formed on the lower reflective electrode 4 by vacuum deposition. Form. This deposited film is formed around the lower reflective electrode 4, is not formed on the connection electrode 5, and functions as a hole transport layer 7.

  In this embodiment, an α-NPD deposited film is used as the hole transport layer 7, but the present invention is not limited to this. The hole transport layer 7 transports holes and injects them into the white light emitting layer 8. Therefore, it is desirable to use a hole transporting material with high hole mobility. Further, it is desirable that it is chemically stable, has a low ionization potential, a low electron affinity, and a high glass transition temperature. The hole transport layer 7 is not particularly limited. For example, N, N′-bis (3-methylphenyl) -N, N′-diphenyl- [1,1′-biphenyl] -4,4 'Diamine (TPD), 4,4'-bis [N- (1-naphthyl) -N-phenylamino] biphenyl (α-NPD), 4,4', 4 "-tri (N-carbazolyl) triphenylamine (TCTA), 1,3,5-tris [N- (4-diphenylaminophenyl) phenylamino] benzene (p-DPA-TDAB), 4,4 ', 4 "-tris (N-carbazole) triphenylamine (TCTA), 1,3,5-tris [N, N-bis (2-methylphenyl) -amino] -benzene (o-MTDAB), 1,3,5-tris [N, N-bis (3- Methylphenyl) -amino] Benzene (m-MTDAB), 1,3,5-tris [N, N-bis (4-methylphenyl) -amino] -benzene (p-MTDAB), 4,4 ', 4 "-tris [1-naphthyl (Phenyl) amino] triphenylamine (1-TNATA), 4,4 ′, 4 ″ -tris [2-naphthyl (phenyl) amino] triphenylamine (2-TNATA), 4,4 ′, 4 ″ -Tris [Biphenyl-4-yl- (3-methylphenyl) amino] triphenylamine (p-PMTDATA), 4,4 ′, 4 ″ -tris [9,9-dimethylfluoren-2-yl (phenyl) amino] tri Phenylamine (TFATA), 4,4 ′, 4 ″ -tris (N-carbazoyl) triphenylamine (TCTA), 1,3,5-tris- [N- (4-diphenylaminophenyl) Phenyl) phenylamino] benzene (p-DPA-TDAB), 1,3,5-tris {4- [methylphenyl (phenyl) amino] phenyl} benzene (MTDAPB), N, N'-di (biphenyl-4-) Yl) -N, N′-diphenyl [1,1′-biphenyl] -4,4′-diamine (p-BPD), N, N′-bis (9,9-dimethylfluoren-2-yl) -N , N′-diphenylfluorene-2,7-diamine (PFFA), N, N, N ′, N′-tetrakis (9,9-dimethylfluoren-2-yl)-[1,1-biphenyl] -4, 4'-diamine (FFD), (NDA) PP, 4-4'-bis [N, N '-(3-tolyl) amino] -3-3'-dimethylbiphenyl (HMTPD) is preferred, Single or 2 or more It may be used in combination.

  If necessary, a hole injection layer may be disposed between the lower reflective electrode 4 and the hole transport layer 7. The hole injection layer is preferably made of a material having an appropriate ionization potential in order to lower the injection barrier between the lower reflective electrode 4 and the hole transport layer 7. Moreover, it is desirable to fill the surface irregularities of the underlayer. The hole injection layer is not particularly limited, and examples thereof include copper phthalocyanine, starburst amine compound, polyaniline, polythiophene, vanadium oxide, molybdenum oxide, ruthenium oxide, and aluminum oxide.

  Further, the hole transporting material may contain an oxidizing agent. Thereby, the barrier with the lower reflective electrode 4 can be reduced, or electrical conductivity can be improved. The oxidizing agent is not particularly limited, and examples thereof include Lewis acid compounds such as ferric chloride, ammonium chloride, gallium chloride, indium chloride, and antimony pentachloride, electron accepting compounds such as trinitrofluorene, and hole injection materials. The mentioned vanadium oxide, molybdenum oxide, ruthenium oxide, aluminum oxide, etc. can be used, and these may be used alone or in combination of two or more.

Next, 4,4′-N, N′-dicarbazole-biphenyl (hereinafter referred to as CBP) and bis [2- (2′-benzoate) having a film thickness of 20 nm are formed on the hole transport layer 7 by vacuum deposition. A film in which [4,5-a] thienyl) pyridinate-N, C3 ′] iridium (acetylacetonate) (hereinafter referred to as Brp ₂ Ir (acac)) is co-evaporated is formed. The vapor deposition rates of CBP and Brp ₂ Ir (acac) were 0.20 nm / sec and 0.02 nm / sec, respectively. Brp ₂ Ir (acac) functions as a dopant that determines the emission color. The co-evaporated film of CBP and Brp ₂ Ir (acac) is patterned using a precision mask having an opening pattern of the same size as the lower reflective electrode 4.

Next, on the co-deposited film of CBP and Brp ₂ Ir (acac), a film is formed by co-depositing CBP and iridium complex (hereinafter referred to as Ir (ppy) ₃ ) having a thickness of 40 nm by a vacuum deposition method. . The deposition rates of CBP and Ir (ppy) ₃ were 0.20 nm / sec and 0.02 nm / sec, respectively. Ir (ppy) ₃ functions as a dopant that determines the emission color. The co-evaporated film of CBP and Ir (ppy) ₃ is patterned using a precision mask having an opening pattern of the same size as the lower reflective electrode 4.

  The two-layer co-deposited film functions as the white light emitting layer 8. In the present embodiment, a laminated film of a red light emitting layer and a blue light emitting layer is used for the white light emitting layer 8, but the present invention is not limited to this. Specific examples of the white light-emitting layer 8 include an orange light-emitting layer and a blue light-emitting layer, or a two-layer stacked type using a laminated film such as a yellow light-emitting layer and a blue light-emitting layer, a red light-emitting layer, a green light-emitting layer, and a blue A three-layer stacked type using a stacked film composed of a light-emitting layer and a one-layer stacked type in which a plurality of light-emitting dopants are added to the host material of the light-emitting layer can be given.

  The white light emitting layer 8 emits light with a wavelength specific to the material by recombination of injected holes and electrons. There is a case where the host material itself forming the white light emitting layer 8 emits light, and a case where a dopant material added in a small amount to the host emits light. The host material is not particularly limited. For example, a distyrylarylene derivative (DPVBi), a silole derivative having a benzene ring in the skeleton (2PSP), an oxodiazole derivative having a triphenylamine structure at both ends (EM2), a phenanthrene group Perinone derivative (P1) having a triphenylamine structure at both ends (BMA-3T), perylene derivative (tBu-PTC), tris (8-quinolinol) aluminum, polyparaphenylene vinylene derivative, polythiophene derivative, Examples include polyparaphenylene derivatives, polysilane derivatives, and polyacetylene derivatives, and these may be used alone or in combination of two or more.

Next, the dopant material is not particularly limited. For example, quinacridone, coumarin 6, nile red, rubrene, 4- (dicyanomethylene) -2-methyl-6- (para-dimethylaminostyryl) -4H-pyran ( DCM), dicarbazole derivatives, porphyrin platinum complexes (PtOEP), and iridium complexes (Ir (ppy) ₃ ). These may be used alone or in combination of two or more.

  Next, a film obtained by vapor-depositing tris (8-quinolinol) aluminum (hereinafter referred to as Alq3) having a film thickness of 15 nm is formed on the white light emitting layer 8 by a vacuum vapor deposition method. This deposited film functions as the electron transport layer 9.

  The electron transport layer 9 transports electrons and injects them into the white light emitting layer 8. For this reason, it is desirable to use an electron transporting material having a high electron mobility. The electron transport layer 9 is not particularly limited, and for example, tris (8-quinolinol) aluminum, oxadiazole derivative, silole derivative, zinc benzothiazole complex, bathocuproine (BCP) is desirable, one kind alone or a combination of two or more kinds. You can also

  The electron transport layer 9 preferably contains a reducing agent in the above electron transport material to lower the barrier with respect to the upper transparent electrode 11 or to improve electrical conductivity. Examples of the reducing agent include alkali metals, alkaline earth metals, alkali metal oxides, alkaline earth oxides, rare earth oxides, alkali metal halides, alkaline earth halides, rare earth halides, alkali metals and aromatic compounds. The complex formed by is mentioned. Particularly preferred alkali metals are Cs, Li, Na and K. It is not restricted to these materials, You may use 2 or more types of these materials together.

  Next, a mixed film of Mg and Ag is formed on the electron transport layer 9 as the electron injection layer 10. In this case, using the binary simultaneous vacuum deposition method, the deposition rates are set to 0.14 ± 0.05 nm / s and 0.01 ± 0.005 nm / s, respectively, and a film having a thickness of 10 nm is deposited.

  The electron injection layer 10 improves the electron injection efficiency from the upper transparent electrode 11 to the electron transport layer 9. As the electron injection layer 10, for example, lithium fluoride, magnesium fluoride, calcium fluoride, strontium fluoride, barium fluoride, magnesium oxide, and aluminum oxide are desirable. It is not restricted to these materials, You may use 2 or more types of these materials together.

Next, an In—Zn—O film (hereinafter referred to as an IZO film) with a thickness of 50 nm is formed by a sputtering method. This IZO film functions as the upper transparent electrode 11 and is an amorphous oxide film. As the target at this time, a target with In / (In + Zn) = 0.83 is used. The film forming conditions are an Ar: O ₂ mixed gas atmosphere, a vacuum degree of 0.2 Pa, and a sputtering output of 2 W / cm ² . The transmittance of the Mg: Ag / In—Zn—O laminated film is 65%.

  The upper transparent electrode 11 is electrically connected to the metal substrate 2 through the connection electrode 5 through the contact hole 12. In this embodiment, the connection electrode 5 is used to prevent the upper transparent electrode 11 from being disconnected at the contact hole 12, but the upper transparent electrode 11 can also be connected to the metal substrate 2.

  In this way, the metal substrate 2 and a plurality of striped organic light emitting elements (lower reflective electrode 4, hole transport layer 7, white light emitting layer 8, electron transport layer 9, electron injection layer 10 and upper transparent electrode 11). The OLED board | substrate 13 provided with these is produced.

  Next, without exposing the OLED substrate 13 to the atmosphere, the nitrogen gas is circulated and moved to a sealing chamber that maintains a high dew point.

  Next, a glass substrate is introduced into the sealing chamber. This glass substrate becomes the sealing substrate 14. A photocurable resin is drawn on the edge portion of the sealing substrate 14 using a known seal dispenser device (not shown).

  In the sealing chamber, the sealing substrate 14 and the OLED substrate 13 are bonded and bonded together. A well-known light-shielding plate is placed outside the sealing substrate 14 so that the entire organic light-emitting element is not exposed to UV light, and UV light is irradiated from the sealing substrate 14 side to cure the photocurable resin.

  In this way, the organic light emitting device of this example is obtained.

  In this embodiment, as shown in FIG. 2, a plurality of contact holes 12 are provided on both sides of the lower reflective electrode 4 formed in a plurality of stripes, and the upper transparent electrode 11 has a low resistance via the contact holes 12. Connected to the metal substrate 2. Therefore, the wiring resistance due to the upper transparent electrode 11 is reduced, and the power consumption due to the wiring resistance is reduced. Moreover, since the temperature rise by wiring resistance reduces, the lifetime reduction of an organic light emitting element is suppressed.

  An organic light emitting device according to Example 2 will be described. FIG. 3 is a cross-sectional view of the organic light emitting device according to the second embodiment. FIG. 4 is a plan view of the organic light emitting device shown in FIG. In addition, the same code | symbol is attached | subjected to the same part as the Example mentioned above, and the description is partially abbreviate | omitted. In the present embodiment, the metal substrate 2 functions as a reflective electrode having reflectivity of emitted light.

  A first interlayer insulating film 3 is formed on the metal substrate 2 coated with the insulating film 1. In the first interlayer insulating film 3, a plurality of stripe-shaped contact holes 20 are provided in a portion that becomes the lower reflective electrode of the organic light emitting element.

  Next, the auxiliary wiring 21 is provided on the first interlayer insulating film 3. A second interlayer insulating film 6 is provided thereon. The second interlayer insulating film 6 is provided with a contact hole 12 in a portion that becomes the auxiliary wiring 21 and the lower reflective electrode of the organic light emitting element.

  Next, the hole transport layer 7, the white light emitting layer 8, the electron transport layer 9, the electron injection layer 10, and the upper transparent electrode 11 are formed. The formation method is the same as in Example 1.

  Next, the OLED substrate 13 and the sealing substrate 14 are sealed. The sealing method is the same as in Example 1.

  In the present embodiment, the upper transparent electrode 11 and the auxiliary wiring 21 are electrically connected. Therefore, the wiring resistance due to the upper transparent electrode 11 is reduced, and the power consumption due to the wiring resistance can be reduced. Moreover, since the temperature rise by wiring resistance can be reduced, the lifetime reduction of an organic light emitting element can be suppressed.

  In this embodiment, since the metal substrate 2 is used as the lower reflective electrode of the organic light emitting device, the layer structure is simplified, and the manufacturing process can be reduced and the cost can be reduced.

  An organic light-emitting device according to Example 3 will be described. FIG. 5 is a cross-sectional view of the organic light emitting device according to the third embodiment. 6 is a plan view of the organic light emitting device shown in FIG. In addition, the same code | symbol is attached | subjected to the same part as the Example mentioned above, and the description is partially abbreviate | omitted. In this embodiment, an organic light emitting element is formed on the composite substrate 31 provided with the auxiliary wiring 32 to simplify the layer configuration.

  The composite substrate 31 has the following configuration. A first interlayer insulating film 3 is formed on the metal substrate 2 covered with the insulating film 1. The first interlayer insulating film 3 is provided with a plurality of striped contact holes, and the metal substrate 2 in the opening functions as a lower reflective electrode of the organic light emitting element. An auxiliary wiring 32 is formed thereon. A second interlayer insulating film 6 is formed thereon. The second interlayer insulating film 6 is provided with a contact hole 12 in a portion to be an auxiliary wiring and a portion to be a lower reflective electrode of the organic light emitting element.

  Next, the hole transport layer 7, the white light emitting layer 8, the electron transport layer 9, the electron injection layer 10, and the upper transparent electrode 11 are formed on the composite substrate 31. The formation method is the same as in Example 1.

  Next, the OLED substrate 13 and the sealing substrate 14 are sealed. The sealing method is the same as in Example 1.

  In the present embodiment, the upper transparent electrode 11 is electrically connected to the auxiliary wiring 32. Therefore, the wiring resistance due to the upper transparent electrode 11 is reduced, and the power consumption due to the wiring resistance is reduced. Moreover, since the temperature rise by wiring resistance reduces, the lifetime reduction of an OLED element is suppressed.

  Further, in this embodiment, since the metal substrate 2 is used as the lower reflective electrode of the organic light emitting device, the layer configuration is simplified, and the manufacturing process can be reduced and the cost can be reduced.

  An organic light-emitting device according to Example 4 will be described. FIG. 7 is a cross-sectional view of the organic light emitting device according to the fourth embodiment. 8 and 9 are plan views of the organic light emitting device shown in FIG. In addition, the same code | symbol is attached | subjected to the same part as the Example mentioned above, and the description is partially abbreviate | omitted. In the present embodiment, the auxiliary wiring 41 is provided in order to make the light emitting pixels of the organic light emitting element into a dot shape.

  A first interlayer insulating film 3 is formed on the metal substrate 2 covered with the insulating film 1. The contact holes 12 and 40 are arranged on four sides of the lower reflective electrode 4 arranged in a dot shape. An auxiliary wiring 41 is formed thereon.

  A total of two auxiliary wirings 41 are provided on the left and right sides of the contact hole 12 for each lower reflective electrode 4, but it is also possible to change the position of the contact hole 12 to one.

  A second interlayer insulating film 6, a lower reflective electrode 4, a connection electrode 5, and a third interlayer insulating film 42 are formed thereon. The formation method is the same as in Example 1.

  Next, the hole transport layer 7, the white light emitting layer 8, the electron transport layer 9, the electron injection layer 10, and the upper transparent electrode 11 are formed. The formation method is the same as in Example 1.

  Next, the OLED substrate 13 and the sealing substrate 14 are sealed. The sealing method is the same as in Example 1.

  In the present embodiment, the upper transparent electrode 11 and the metal substrate 2 are electrically connected. Therefore, the wiring resistance due to the upper transparent electrode 11 is reduced, and the power consumption due to the wiring resistance can be reduced. Moreover, since the temperature rise by wiring resistance can be reduced, the lifetime reduction of an organic light emitting element can be suppressed.

  In the present embodiment, the dot-like lower reflective electrode 4 is formed by using the auxiliary wiring 41. Therefore, contact holes 12 and 40 are provided in the four directions of the lower reflective electrode 4 arranged in a dot shape, and the upper transparent electrode 11 and the metal substrate 2 are electrically connected. Thereby, the resistance of the wiring resistance of the upper transparent electrode 11 can be further reduced.

  An organic light emitting device according to Example 5 will be described. FIG. 10 is a cross-sectional view of the organic light emitting device according to the fifth embodiment. 11 and 12 are plan views of the organic light emitting device shown in FIG. In addition, the same code | symbol is attached | subjected to the same part as the Example mentioned above, and the description is partially abbreviate | omitted. In the present embodiment, the auxiliary wiring 51 provided in the vertical direction is connected by the auxiliary wiring 41 in the horizontal direction in order to make the light emitting pixels of the organic light emitting element into a dot shape.

  A first interlayer insulating film 3 is formed on the metal substrate 2 covered with the insulating film 1. The formation method is the same as in Example 1. Auxiliary wirings 41 and 51 are formed thereon. FIG. 11 shows a plan view of the auxiliary wirings 41 and 51. The auxiliary wiring 51 connects the auxiliary wiring 41 of the lower reflective electrode 4 adjacent to the left and right. In this embodiment, the auxiliary wiring 51 is not continuously connected from the left end to the right end. However, it is possible to make the auxiliary wiring 51 continuous from the left end to the right end by changing the formation position of the contact hole 50. In the present embodiment, the auxiliary wirings 41 and 51 are formed of the same material, but may be formed of different materials.

  A second interlayer insulating film 6, a lower reflective electrode 4, a connection electrode 5, and a third interlayer insulating film 42 are formed thereon. The formation method is the same as in Example 4.

  Next, the hole transport layer 7, the white light emitting layer 8, the electron transport layer 9, the electron injection layer 10, and the upper transparent electrode 11 are formed. The formation method is the same as in Example 4.

  Next, the OLED substrate 13 and the sealing substrate 14 are sealed. The sealing method is the same as in Example 4.

  In the present embodiment, the upper transparent electrode 11 and the metal substrate 2 are electrically connected. Therefore, the wiring resistance due to the upper transparent electrode 11 is reduced, and the power consumption due to the wiring resistance can be reduced. Moreover, since the temperature rise by wiring resistance can be reduced, the lifetime reduction of an organic light emitting element can be suppressed.

  In the present embodiment, the dot-like lower reflective electrode 4 is formed by using the auxiliary wiring 41. Therefore, a contact hole 50 is disposed between the lower reflective electrodes 4 in the vertical direction to electrically connect the upper transparent electrode 11 and the metal substrate 2. Thereby, the resistance of the wiring resistance of the upper transparent electrode 11 can be further reduced.

  Further, in this embodiment, by using the auxiliary wiring 51, the wiring resistance of the lower reflective electrode 4 can be further reduced.

  An organic light emitting device according to Example 6 will be described. FIG. 13 is a cross-sectional view of an organic light-emitting device according to Example 6. 14 and 15 are plan views of the organic light emitting device shown in FIG. In addition, the same code | symbol is attached | subjected to the same part as the Example mentioned above, and the description is partially abbreviate | omitted. This embodiment is characterized by a pixel arrangement formed in a matrix.

  On the metal substrate 2 covered with the insulating film 1, the first interlayer insulating film 3, the lower reflective electrode 4, the connection electrode 5, the second interlayer insulating film 6, the hole transport layer 7, the white light emitting layer 8, An electron transport layer 9 and an electron injection layer 10 are formed. The formation method is the same as in Example 4.

  Next, the upper transparent electrode 11 is formed on the electron injection layer 10. As shown in FIG. 15, the upper transparent electrode 11 is disposed so as to cover the lower reflective electrode 4 and the contact holes 12 and 40.

  In the present embodiment, the upper transparent electrode 11 is electrically connected to the metal substrate 2. Therefore, the wiring resistance due to the upper transparent electrode 11 is reduced, and the power consumption due to the wiring resistance can be reduced. Moreover, since the temperature rise by wiring resistance can be reduced, the lifetime reduction of an organic light emitting element can be suppressed.

  Further, in this embodiment, since the upper transparent electrode 11 is formed in a stripe shape, the pixel portion where the upper transparent electrode 11 and the lower reflective electrode 4 intersect can emit light independently. Thus, when the organic light emitting device of this embodiment is used as a light source of a known liquid crystal display device, light emission can be performed for each pixel, and power consumption can be reduced and contrast can be improved.

  An organic light emitting device according to Example 7 will be described. FIG. 16 is a cross-sectional view of an organic light-emitting device according to Example 7. 17 and 18 are plan views of the organic light emitting device shown in FIG. In addition, the same code | symbol is attached | subjected to the same part as the Example mentioned above, and the description is partially abbreviate | omitted. In this embodiment, the layer configuration is simplified by using the metal substrate 2 as a reflective electrode (lower reflective electrode of the organic light emitting element) having reflectivity of emitted light. Further, by forming the auxiliary wiring of the upper transparent electrode 11 in a mesh shape, the wiring resistance is reduced.

  A first interlayer insulating film 3 is formed on the metal substrate 2 coated with the insulating film 1. A plurality of dot-like contact holes 70 are formed thereon. The formation method is the same as in Example 2.

  Next, auxiliary wirings 21 and 71 are arranged on the first interlayer insulating film 3 so as to surround the contact hole 70. In this embodiment, the auxiliary wirings 21 and 71 are made of the same material, but may be made of different materials. A second interlayer insulating film 6 and a contact hole 12 are provided thereon. The formation method is the same as in Example 2.

  Next, the hole transport layer 7, the white light emitting layer 8, the electron transport layer 9, the electron injection layer 10, and the upper transparent electrode 11 are formed. The formation method is the same as in Example 2.

  Next, the OLED substrate 13 and the sealing substrate 14 are sealed. The sealing method is the same as in Example 2.

  In the present embodiment, the upper transparent electrode 11 and the auxiliary wirings 21 and 71 are electrically connected. Since the auxiliary wirings 21 and 71 are formed in a mesh shape, the wiring resistance can be reduced. Therefore, the wiring resistance due to the upper transparent electrode 11 is reduced, and the power consumption due to the wiring resistance can be reduced. Moreover, since the temperature rise by wiring resistance can be reduced, the lifetime reduction of an organic light emitting element can be suppressed.

  Further, in this embodiment, since the metal substrate 2 is used as a reflective electrode having reflectivity of emitted light, the layer configuration is simplified, and the manufacturing process can be reduced and the cost can be reduced.

The figure which shows sectional drawing of the organic light-emitting device which concerns on Example 1 of this invention. The figure which shows the top view of the organic light-emitting device shown in FIG. FIG. 5 is a cross-sectional view of an organic light-emitting device according to Example 2. The figure which shows the top view of the organic light-emitting device shown in FIG. FIG. 6 is a cross-sectional view of an organic light-emitting device according to Example 3. The figure which shows the top view of the organic light-emitting device shown in FIG. FIG. 6 is a cross-sectional view of an organic light-emitting device according to Example 4. The figure which shows the top view of the organic light-emitting device shown in FIG. The figure which shows the top view of the organic light-emitting device shown in FIG. FIG. 6 is a cross-sectional view of an organic light emitting device according to Example 5. The figure which shows the top view of the organic light-emitting device shown in FIG. The figure which shows the top view of the organic light-emitting device shown in FIG. FIG. 10 is a cross-sectional view of an organic light emitting device according to Example 6. The figure which shows the top view of the organic light-emitting device shown in FIG. The figure which shows the top view of the organic light-emitting device shown in FIG. FIG. 10 is a diagram showing a cross-sectional view of an organic light-emitting device according to Example 7. The figure which shows the top view of the organic light-emitting device shown in FIG. The figure which shows the top view of the organic light-emitting device shown in FIG.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Insulating film 2 Metal substrate 3 1st interlayer insulating film 4 Lower reflective electrode 5 Connection electrode 6 2nd interlayer insulating film 7 Hole transport layer 8 White light emitting layer 9 Electron transport layer 10 Electron injection layer 11 Upper transparent electrode 12, 20, 40, 50, 70 Contact hole 13 OLED substrate 14 Sealing substrate 21, 32, 41, 51, 71 Auxiliary wiring 31 Composite substrate 42 Third interlayer insulating film

Claims (9)

In an organic light emitting device in which an organic light emitting element having a lower reflective electrode, an organic layer, and an upper transparent electrode is disposed on a conductive substrate,
The organic light-emitting device, wherein the upper transparent electrode is connected to the conductive substrate through a contact hole disposed around the lower reflective electrode.   The organic light-emitting device according to claim 1, wherein the upper transparent electrode is connected to the conductive substrate via a connection electrode formed of the same material as the lower reflective electrode.   The organic light emitting device according to claim 1, further comprising an auxiliary wiring connected to the lower reflective electrode.   The organic light-emitting device according to claim 3, wherein the lower reflective electrode has a dot shape.   The organic light-emitting device according to claim 4, wherein the upper transparent electrode and the conductive substrate are connected through a plurality of contact holes arranged on four sides of the dot-like lower reflective electrode. .   The organic light-emitting device according to claim 2, wherein the upper transparent electrode has a stripe shape. In an organic light emitting device in which an organic light emitting element having an organic layer and an upper transparent electrode is disposed on a conductive substrate,
The organic light-emitting device, wherein the conductive substrate functions as a reflective electrode having reflectivity of emitted light.   The organic light emitting device according to claim 7, further comprising an auxiliary wiring connected to the upper transparent electrode.   The organic light-emitting device according to claim 8, wherein the auxiliary wiring has a mesh shape.

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