JP2009299158A - Vapor deposition apparatus and vapor deposition method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a vapor deposition apparatus and a vapor deposition method, in which the film thickness of a vapor deposition film can be detected with high detection accuracy and a vapor deposition film having a desired film thickness can be stably formed. <P>SOLUTION: A deposition amount of a vapor deposition material M vaporized from a housing container 4 is detected at a detecting position different form a vapor deposition position of the vapor deposition material M, by a detection mechanism, as well as the detection position is changed in accordance with a residual amount of the vapor deposition material M in the housing container, so that the detection position can be moved to follow the changes in the distribution density of the vaporized vapor deposition material M. Thereby, even when the distribution density changes, discrepancy between the deposition amount of the vapor deposition material M depositing on a vapor deposition position and a deposition amount of the vapor deposition material depositing on a detection position can be prevented. By the method, the film thickness of the vapor deposition film can be detected with high detection accuracy, and a vapor deposition film having a desired film thickness can be stably formed. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a vapor deposition apparatus and a vapor deposition method.

  A vapor deposition method using a vapor deposition apparatus is widely used for forming electrodes, wiring patterns, and the like in a device manufacturing process. One such vapor deposition method is a vacuum vapor deposition method. The vacuum vapor deposition method is a method of forming a thin film of a vapor deposition material on an object by evaporating the vapor deposition material accommodated in a container under reduced pressure and attaching the vapor deposition material to the object. Such a vacuum deposition method is suitably used when, for example, an organic layer or the like provided in a low molecular organic EL device is formed on a substrate.

  When forming the organic layer, if the film thickness of the vapor deposition material to be deposited on the substrate differs from the originally required film thickness, the characteristics of the organic layer are not affected even if the difference is slight. It will be different from the intended one. For this reason, it is a manufacturing problem to stably form a vapor deposition film having a desired film thickness.

For such manufacturing problems, a sensor for detecting the deposition amount of the deposition material is fixed near the substrate, and the thickness of the deposition film is calculated based on the detection result of the deposition amount detected by the sensor. Thus, a method of forming a vapor deposition film having a more desired thickness has been proposed (see, for example, Patent Document 1).
JP 2007-224354 A

  However, the vapor deposition material evaporated from the container decreases with the elapse of the vapor deposition time, and the distance between the upper surface of the vapor deposition material and the opening of the container increases, so the evaporation direction of the vapor deposition material is regulated by the opening. As a result, the distribution of the vapor deposition material is biased to a region in the vertical direction. For this reason, in the said method, with progress of vapor deposition time, deviation will arise between the distribution density of the vapor deposition material on a board | substrate, and the distribution density of the vapor deposition material in the detection position by a sensor. As a result, the calculation result of the film thickness based on the detection result becomes a value different from the actual film thickness, and it becomes difficult to form a vapor deposition film having a desired film thickness. The same problem is conceivable not only in organic EL elements but also in other devices that form a deposited film by a deposition apparatus.

  In view of the circumstances as described above, an object of the present invention is to provide a vapor deposition apparatus and a vapor deposition method capable of detecting a film thickness of a vapor deposition film with high detection accuracy and stably forming a vapor deposition film having a desired film thickness. It is to provide.

  In order to achieve the above object, a vapor deposition apparatus according to the present invention includes a container having an opening and accommodating a vapor deposition material, and the vapor deposition material evaporated from the container at a detection position different from the vapor deposition position of the vapor deposition material. And a control mechanism for moving the detection position in accordance with the remaining amount of the vapor deposition material in the container.

  According to the present invention, the detection mechanism detects the deposition amount of the vapor deposition material evaporated from the container at a detection position different from the vapor deposition position of the evaporation material, and the detection position according to the remaining amount of the vapor deposition material in the container. Therefore, the detection position can be moved so as to follow the change in the distribution density of the evaporated vapor deposition material. For this reason, even when the distribution density changes, it is possible to prevent the adhesion amount of the vapor deposition material adhering to the vapor deposition position and the adhesion amount of the vapor deposition material adhering to the detection position from becoming different values. Thereby, the film thickness of a vapor deposition film can be detected with high detection accuracy, and a vapor deposition film having a desired film thickness can be stably formed.

In the vapor deposition apparatus, the detection mechanism has a movable sensor for detecting the distribution density at the detection position, and the control mechanism moves the detection position by moving the sensor. And
According to the present invention, the detection mechanism has a movable sensor for detecting the distribution density at the detection position, and the control mechanism moves the detection position by moving the sensor. It can be easily changed.

Said vapor deposition apparatus WHEREIN: The said control mechanism moves the said detection position according to the said remaining amount discriminate | determined based on the detection result of the said detection mechanism.
According to the present invention, since the control mechanism moves the detection position in accordance with the remaining amount determined based on the detection result of the detection mechanism, the detection position follows the detection result of the detection mechanism in real time. Can be moved. Thereby, the distribution density of the vapor deposition material can be detected with high accuracy.

Said vapor deposition apparatus WHEREIN: The said control mechanism moves the said detection position according to the said remaining amount discriminate | determined by progress of vapor deposition time.
The vapor deposition material in the container gradually decreases as the vapor deposition time elapses. According to the present invention, since the control mechanism moves the detection position according to the remaining amount determined by the elapse of the vapor deposition time, the movement of the detection position can be easily controlled.

Said vapor deposition apparatus WHEREIN: The said control mechanism moves the said detection position according to the said residual amount discriminated by the distance of the upper surface of the said vapor deposition material in the said container, and the said opening part.
When the vapor deposition material in the container is fully accommodated in the container, the distance from the opening is small, so that it easily diffuses outside the region of the opening during evaporation. On the other hand, when the remaining amount of the vapor deposition material decreases, the distance from the opening increases, so the evaporation direction of the vapor deposition material is restricted by the opening, and it is difficult to diffuse outside the area of the opening. In view of such evaporation characteristics, in the present invention, the control mechanism moves the detection position according to the remaining amount determined by the distance between the upper surface of the vapor deposition material in the container and the opening. Thereby, since the detection position can be moved according to the degree of diffusion of the vapor deposition material, the distribution density of the vapor deposition material can be detected with high accuracy.

The evaporation apparatus further includes a measurement mechanism that measures the distance in a non-contact manner.
According to the present invention, since the measurement mechanism that measures the above distance in a non-contact manner is further provided, the distance between the upper surface of the vapor deposition material in the container and the opening portion can be contacted while the vapor deposition material is evaporated. Can be measured. Thereby, the said distance can be measured, without affecting the distribution state of the vapor deposition material in a container.

In the vapor deposition apparatus, the control mechanism stores correlation data obtained by correlating the change in the remaining amount and the change in the detection position, and moves the detection position based on the correlation data. .
According to the present invention, the control mechanism stores the correlation data obtained by correlating the change in the remaining amount and the change in the detection position, and moves the detection position based on the correlation data. Based on this, the detection position can be determined. Thereby, the movement of the detection position can be controlled more easily.

  The vapor deposition method according to the present invention evaporates the vapor deposition material while detecting the amount of the vapor deposition material evaporated from the container at a detection position different from the vapor deposition position of the vapor deposition material accommodated in the container having the opening. And the detection position is moved according to the remaining amount of the vapor deposition material in the container.

  According to the present invention, the vapor deposition material is evaporated while detecting the amount of vapor deposition material evaporated from the container at a detection position different from the evaporation position of the vapor deposition material accommodated in the container having the opening. Since the detection position is moved according to the remaining amount of the evaporation material, the detection position can be moved so as to follow the change in the distribution density. For this reason, even when the distribution density changes, it is possible to prevent the adhesion amount of the vapor deposition material adhering to the vapor deposition position from being different from the adhesion amount of the vapor deposition material adhering to the detection position. Thereby, the film thickness of a vapor deposition film can be detected with high detection accuracy, and a vapor deposition film having a desired film thickness can be stably formed.

Embodiments of the present invention will be described below with reference to the drawings.
FIG. 1 is a diagram illustrating a configuration of a vapor deposition apparatus 1 according to the present embodiment.
The vapor deposition apparatus 1 is an apparatus for vapor-depositing a thin film on the surface (deposition position) of the substrate 11, and includes a chamber 2, a substrate holding unit 3, a container 4, a heating device 5, a sensor 6, and a control. And a mechanism 7.

The chamber 2 is formed so as to be able to seal with the outside, and the inside can be decompressed by a decompression device such as a pump (not shown).
The substrate holding unit 3 is provided on the ceiling side (upper side in the drawing) in the chamber 2 and can hold the substrate 11.

  The container 4 is a container that can accommodate the vapor deposition material M therein, and is provided in a cylindrical shape, for example. An opening 4 a is provided at the upper end portion of the container 4 in the figure, and the inside of the container 4 and the chamber 2 are in communication with each other. The vapor deposition material M inside the container 4 evaporates to the outside through the opening 4a. A laser distance meter 8 is provided in the vicinity of the container 4. The laser distance meter 8 is a laser sensor that measures the distance between the upper surface Ma and the opening 4a by measuring the position of the upper surface Ma of the vapor deposition material M. In the drawing, the laser distance meter 8 is illustrated as being provided between the opening 4 a and the substrate 11, but actually, the material M evaporated from the opening 4 a reaches the substrate 11. It is placed in a position that does not become an obstacle.

  The heating device 5 is provided so as to cover the outer periphery of the container 4, and a heating mechanism such as a heating wire is provided. This heating device 5 may be provided independently at the upper part and the lower part of the container 4 in order to prevent the vapor deposition material M from adhering to the inner wall of the container 4 due to a temperature difference.

  The sensor 6 is a sensor that detects an adhesion amount of the vapor deposition material M in the chamber 2, and is disposed outside the container 4 and on the side of the substrate holding unit 3. The area where the sensor 6 is arranged becomes the detection position of the adhesion amount. The sensor 6 is provided to be movable in a predetermined area in the chamber 2. For example, the sensor 6 is provided to be movable between the detection position P 1 and the detection position P 5 in a direction along the substrate surface of the substrate 11. Yes.

  The detection position P1 is provided, for example, at a position farthest from the position R in the vertical direction of the container 4, and the detection position P5 is provided, for example, at a position closest to the position R in the vertical direction of the container 4. Yes. When the sensor 6 moves, the position where the deposition amount of the vapor deposition material M is detected by the sensor 6 moves. FIG. 1 shows a state in which the sensor 6 is arranged on the detection position P3 that is an intermediate position between the detection position P1 and the detection position P5. The sensor 6 is provided with a monitor (not shown), and the detection information of the sensor 6 is displayed on the monitor.

  The control mechanism 7 comprehensively controls the operation of the vapor deposition apparatus 1. The control unit 7 includes a heating device control unit 71, a sensor position control unit 72, a film thickness calculation unit 73, a remaining amount calculation unit 74, a storage unit 75, and a CPU 76. They are connected via a bus line 77.

  The heating device control unit 71 controls the heating temperature by the heating device 5 and the timing of starting and stopping heating. The sensor position control unit 72 controls the position of the sensor 6 provided in a movable manner in the chamber 2. The sensor 6 is moved to a predetermined position under the control of the sensor position control unit 72, and the detection position is moved along with this movement.

  The film thickness calculation unit 73 calculates an estimated value of the film thickness of the vapor deposition film formed on the substrate 11 based on the adhesion amount of the vapor deposition material M detected by the sensor 6. For example, the weight of the vapor deposition material M attached to the sensor 6 is converted into a volume, and the film thickness is calculated based on the volume value. This calculated value is displayed on a monitor provided in the sensor 6, for example. The remaining amount calculation unit 74 calculates the remaining amount of the vapor deposition material M in the container 4 based on the measurement result of the laser distance meter 8.

  The storage unit 75 stores position data related to the detection position of the sensor 6. This position data is stored in a state correlated with data (remaining amount data) measured by the remaining amount calculating unit 74. The correlation between the position data and the remaining amount data is performed in advance by experiments or simulations. Hereinafter, an example of an experiment for obtaining the correlation data will be described. Here, for example, a case where a thin film having a thickness of 100 nm is formed on the substrate 11 will be described.

  First, the basic idea for conducting this experiment will be described. In the state where the vapor deposition material M is full, the vapor deposition material M is disposed up to a depth position near the opening 4a of the container 4, and therefore the evaporated vapor deposition material M is opened not only in the vertical direction of the opening 4a. It also diffuses outside the portion 4a in plan view. In this case, since the distribution density of the vapor deposition material M on the substrate 11 and the detection position of the sensor 6 is substantially the same, the film thickness calculation value based on the detection result of the sensor 6 is the actual film of the thin film formed on the substrate 11. It can be estimated that the thickness value is almost the same.

  On the other hand, as the remaining amount of the vapor deposition material M decreases, the upper surface Ma of the vapor deposition material M moves from the opening 4a of the container 4 to the bottom side, and the vapor deposition material is formed by the opening 4a and the inner wall of the container 4. The diffusion direction of M is easily regulated. For this reason, the evaporated deposition material M is less likely to diffuse to the outside of the opening 4a in plan view, and the evaporation material M is likely to be distributed in the vertical direction of the opening 4a. In this case, the distribution density of the vapor deposition material M is different between the detection position on the substrate 11 and the conventional detection position, that is, the distribution density on the substrate 11 arranged in the vertical direction of the opening 4a is the former. Since it becomes higher than the distribution density of the detection position, it can be estimated that the actual film thickness value is larger than the film thickness estimation value obtained by the sensor 6.

  Therefore, in this experiment, vapor deposition is performed while checking whether or not the film thickness calculation value based on the detection result of the sensor 6 is substantially the same as the actual film thickness value, In the case where there is a deviation from the film thickness value, the remaining amount of the vapor deposition material M in the container 4 is measured and stored. Hereinafter, a specific procedure of this experiment will be described.

  First, as shown in FIG. 3, for example, the sensor 6 is arranged at the detection position P1 farthest from the position R in the vertical direction of the container 4, and the container 4 is filled with the vapor deposition material M in a full amount (100%). Let Thereafter, the inside of the chamber 2 is depressurized, the heating device 5 is operated, and vacuum deposition is started. When the vacuum deposition is started, the deposition material M in the container 4 evaporates and diffuses into the chamber 2 from the opening 4a. At this time, in a state where the position of the sensor 6 is fixed at the detection position P1, a thin film is formed on the substrate 11 until a film thickness value of 100 nm is displayed on the monitor of the sensor 6.

  When the film thickness value displayed on the monitor of the sensor 6 reaches 100 nm, the vapor deposition is stopped, and the film thickness of the thin film formed on the substrate 11 is actually measured. As a result of this measurement, when the measured value is 100 nm, it can be determined that the detection result by the sensor 6 is equal to the actual film thickness value and the detected value is normal. In this case, after replacing the substrate 11 and resetting the film thickness value of the monitor to 0 nm, the vapor deposition operation is performed until the display value of the monitor of the sensor 6 becomes 100 nm again while keeping the position of the sensor 6 at the detection position P1, The film thickness of the thin film formed on the substrate 11 is measured.

  As a result of measuring the film thickness of the thin film on the substrate 11, when the measured value exceeds 100 nm, the distribution density of the vapor deposition material M evaporated from the opening 4a at that time is biased toward the opening 4a. Therefore, it can be determined that the detected values are shifted. In this case, the distance between the upper surface Ma of the vapor deposition material M and the opening 4a of the container 4 is measured, and how much the vapor deposition material M is consumed from the full amount (100%), that is, The remaining amount of the vapor deposition material M is calculated. The calculated remaining amount is stored in the storage unit 75 of the control mechanism 7.

  Next, for example, the sensor 6 is disposed at the detection position P3, and the container 4 is filled with the vapor deposition material M in a full amount (100%). Thereafter, vacuum deposition is started in the same manner as described above, and a thin film is formed on the substrate 11 until the film thickness value of 100 nm is displayed on the monitor of the sensor 6 with the position of the sensor 6 fixed at the detection position P3. When the displayed value reaches 100 nm, the deposition is stopped and the film thickness of the thin film formed on the substrate 11 is actually measured.

  As a result of the film thickness measurement, when the measured value is 100 nm, it can be determined that the detected value by the sensor 6 is normal as in the case of the detection position P1, and when the measured value exceeds 100 nm. It can be determined that the detection value by the sensor 6 is shifted. When it is determined that the detected value is normal, the substrate 11 is replaced and the monitor film thickness value is reset to 0 nm. After the reset, the vapor deposition operation is performed again until the display value of the monitor of the sensor 6 reaches 100 nm while the position of the sensor 6 is set to the detection position P3, and the film thickness of the thin film formed on the substrate 11 is measured. When it is determined that the detected value is deviated, the distance between the upper surface Ma of the vapor deposition material M and the opening 4a of the container 4 is measured, and the remaining amount of the vapor deposition material M is calculated. The calculated remaining amount is stored in the storage unit 75 of the control mechanism 7.

  The same procedure is performed also at the detection position P5 shown in FIG. 5, for example, and the remaining amount of the vapor deposition material M is calculated and stored in the storage unit 75 in a state correlated with the detection position P5. Further, the detection positions P1, P3 such as a detection position P2 (see FIG. 1) between the detection positions P1 and P3 and a detection position P4 (see FIG. 1) between the detection positions P3 and P5, etc. , P5, the remaining amount of the vapor deposition material M is calculated by simulation based on the results of the detection positions P1, P3, and P5, and stored in the storage unit 75 in a state correlated with the detection positions.

  As a result of the experiment, it is assumed that the remaining amount of the vapor deposition material M when the detection value of the sensor 6 deviates at the detection position P1 is M1, the remaining amount is M2 at the detection position P2, and at the detection position P3. It is assumed that the remaining amount is M3, the remaining amount is M4 at the detection position P4, and the remaining amount is M5 at the detection position P5. The detection position is a position that gradually approaches the substrate 11 from P1 to P5, and the remaining amount is a value that gradually decreases from M1 to M5.

  From this result, in order to maintain the detection value by the sensor 6 to be normal, when the sensor 6 is at the detection position P1, the detection position is moved to P2 when the remaining amount of the vapor deposition material M becomes M1. You can see that it is necessary. Similarly, when the detection position is at P2, it is necessary to move the detection position to P3 when the remaining amount of the vapor deposition material M reaches M2. The same applies to the case where the detection positions are P3 to P5.

  These values are stored as a data table as shown in FIG. In the data table T1 shown in FIG. 6, the above experimental results are stored in a correlated state. Specifically, the detection positions P1 to P5 and the remaining amounts M1 to M5 are stored in a correlated state. As shown in FIG. 6, the same experiment may be performed for different materials, and data tables T <b> 2 and T <b> 3 may be generated for each material and stored in the storage unit 75.

  When a thin film is formed on the substrate 11 by using the vapor deposition apparatus 1 configured as described above, vapor deposition is performed while measuring the distance between the upper surface Ma of the vapor deposition material M and the opening 4a by the laser distance meter 8. The detection position of the sensor 6 is moved according to the remaining amount of the vapor deposition material M based on the measured distance. At that time, the information of the data table T1 obtained by the above experiment is used.

  Specifically, first, the sensor 6 is arranged at the detection position P1 (detection position P1 on the data table T1), and vapor deposition is started in a state where the vapor deposition material M is fully accommodated in the container 4 (100%). . Along with the start of vapor deposition, the distance between the upper surface Ma of the vapor deposition material M and the opening 4a is measured by the laser distance meter 8, and the remaining amount of the vapor deposition material M is calculated based on the distance.

  After the vapor deposition starts, when the remaining amount of the vapor deposition material M in the container 4 becomes M1 by the measurement of the laser distance meter 8, the sensor 6 is moved to the detection position P2 by the control of the control mechanism 7. By this operation, even if the distribution density of the vapor deposition material M at the detection position P1 decreases, the detection value by the sensor 6 is maintained as normal.

  After the sensor 6 is moved to the detection position P2, when the remaining amount of the vapor deposition material M in the container 4 becomes M2 by the measurement of the laser distance meter 8, the sensor 6 is moved to the detection position P3 by the control of the control mechanism 7. To do. With this operation, even if the distribution density of the vapor deposition material M at the detection position P2 decreases, the detection value of the sensor 6 is maintained as normal.

  Thereafter, similarly, when the remaining amount of the vapor deposition material M reaches M3 and M4, the sensor 6 is moved to the detection positions P4 and P5, respectively, under the control of the control mechanism 7. After the sensor 6 is moved to the detection position P5, when the remaining amount of the vapor deposition material M becomes M5, the vapor deposition operation is terminated. In this way, a thin film is deposited on the substrate 11.

  Thus, according to this embodiment, the sensor 6 detects the amount of the deposition material M at the detection positions P1 to P5 outside the container 4, and the remaining amount of the deposition material M in the container 4 Since the detection position is changed in accordance with the change in the amount of deposition material M, the amount of deposition material M adhering to the change follows the change even when the distribution density changes as the remaining amount of the deposition material M decreases. Can be detected. As a result, it is difficult for a deviation to occur between the amount of adhesion at the detection position and the amount of adhesion at the vapor deposition position (substrate 11 surface), so that the film thickness of the vapor deposition film can be detected with high detection accuracy. Thereby, the vapor deposition film of a desired film thickness can be formed stably.

The technical scope of the present invention is not limited to the above-described embodiment, and appropriate modifications can be made without departing from the spirit of the present invention.
For example, in the above embodiment, the laser distance meter 8 is provided as means for measuring the remaining amount of the vapor deposition material M, but the present invention is not limited to this. Since the remaining amount of the vapor deposition material M changes as the vapor deposition time elapses, for example, the correlation between the remaining amount of the vaporized material M in the container 4 and the vapor deposition time may be obtained by experiment. In this case, the vapor deposition time calculated | required by experiment is memorize | stored in the memory | storage part 75 as time data, and it is set as the state with which the said time data and position data were correlated. Thus, even if it is the structure which moves a detection position using the data which replaced the change of the residual amount of the vapor deposition material M with the change of vapor deposition time, the said effect can be acquired. In addition, since it is only necessary to obtain vapor deposition time data instead of measuring the remaining amount in the vapor deposition operation, the apparatus configuration can be simplified.

  Further, since the remaining amount of the vapor deposition material M is an amount obtained by subtracting the evaporated amount from the amount initially stored in the container 4, for example, the correlation between the evaporation amount of the vapor deposition material M and the remaining amount is obtained by experiment. It doesn't matter. In this case, the evaporation amount obtained by the experiment is stored in the storage unit 75 as evaporation amount data, and the evaporation amount data and the position data are correlated. As described above, even if the detection position is moved using the data in which the change in the remaining amount of the vapor deposition material is replaced with the change in the evaporation amount, the above effect can be obtained. In addition, as a method for calculating the vapor deposition amount, for example, an integrated value of the film thickness calculated by the film thickness calculating unit 73 can be obtained and the evaporation amount can be calculated from the integrated value.

The figure which shows the structure of the vapor deposition apparatus which concerns on embodiment of this invention. The block diagram which shows the structure of the control mechanism of the vapor deposition apparatus which concerns on this embodiment. The figure which shows the mode of experiment using the vapor deposition apparatus which concerns on this embodiment. Same experimental diagram. Same experimental diagram. The data table figure memorize | stored in the memory | storage part of the vapor deposition apparatus which concerns on this embodiment.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Deposition apparatus 2 ... Chamber 3 ... Substrate holding | maintenance part 4 ... Container 4a ... Opening part 5 ... Heating device 6 ... Sensor (detection mechanism) 7 ... Control mechanism 8 ... Laser distance meter (measurement mechanism) M ... Deposition material Ma ... Upper surface T1 to T3 ... Data table (correlation data)

Claims (8)

A container having an opening and containing a vapor deposition material;
A detection mechanism for detecting an adhesion amount of the vapor deposition material evaporated from the container at a detection position different from the vapor deposition position of the vapor deposition material;
A vapor deposition apparatus comprising: a control mechanism that moves the detection position in accordance with a remaining amount of the vapor deposition material in the container. The detection mechanism has a movable sensor for detecting the adhesion amount at the detection position;
The vapor deposition apparatus according to claim 1, wherein the control mechanism moves the detection position by moving the sensor. The vapor deposition apparatus according to claim 1, wherein the control mechanism moves the detection position according to the remaining amount determined based on a detection result of the detection mechanism. The vapor deposition apparatus according to claim 1, wherein the control mechanism moves the detection position according to the remaining amount determined by the elapse of vapor deposition time. The said control mechanism moves the said detection position according to the said remaining amount discriminate | determined by the distance of the upper surface of the said vapor deposition material in the said container, and the said opening part. The vapor deposition apparatus of description. The vapor deposition apparatus according to claim 5, further comprising a measurement mechanism that measures the distance in a non-contact manner. The control mechanism stores correlation data obtained by correlating the change in the remaining amount and the change in the detection position, and moves the detection position based on the correlation data. 6. The vapor deposition apparatus according to claim 1. Evaporating the vapor deposition material while detecting the amount of the vapor deposition material evaporated from the container at a detection position different from the vapor deposition position of the vapor deposition material accommodated in the container having the opening,
The vapor deposition method, wherein the detection position is moved according to a remaining amount of the vapor deposition material in the container.

Images