JP2009295514A - Lithium ion secondary battery and method of manufacturing the same - Google Patents
Lithium ion secondary battery and method of manufacturing the same Download PDFInfo
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Abstract
Description
本発明は、リチウムイオン二次電池、特に正極物質としてLiCoO2を用いたリチウムイオン二次電池およびその製造方法に関する。 The present invention relates to a lithium ion secondary battery, in particular, a lithium ion secondary battery using LiCoO 2 as a positive electrode material and a method for manufacturing the same.
リチウムイオン二次電池は、ニカド(Ni−Cd)電池やニッケル水素(Ni−MH)電池に比べて、(1)エネルギー密度が高いため軽量化(重量1/2程度)および小型化(体積で20〜50%程度)が可能であり、(2)作動電圧が高いため電池搭載本数の低減により機器の軽量化・小型化が可能であり、(3)メモリ効果がないため継ぎ足し充電が可能である、といった優れた特徴を有するため、ノートパソコンや携帯電話に代表される携帯機器に広く用いられている。 Lithium ion secondary batteries are (1) lighter in weight (about 1/2 the weight) and smaller in size (by volume) than NiCad (Ni-Cd) and nickel metal hydride (Ni-MH) batteries. (2) Since the operating voltage is high, the number of installed batteries can be reduced to reduce the weight and size of the equipment. (3) Since there is no memory effect, additional charging is possible. Since it has excellent features such as certain, it is widely used in portable devices such as notebook computers and mobile phones.
しかし、これら応用機器の高機能化に伴って、リチウムイオン二次電池を更に高出力化する要請が高い。 However, as these application devices become more functional, there is a high demand for further increasing the output of lithium ion secondary batteries.
特許文献1には、c軸が基板の法線に対して60°以上傾いているLiCoO2から成る正極を用いた固体リチウムイオン二次電池と、気相成膜法によりソース材料を特定の入射角度で供給して上記の正極を製造する方法とが開示されている。正極活物質であるLiCoO2と電解質間の抵抗が下がることで高出力化できる。
In
しかし特許文献1の方法では、c軸が基板に対して垂直であるLiCoO2から成る正極を製造することは困難であり、高出力化に限界があった。
However, in the method of
特許文献2には、単結晶ニ酸化マンガン粒子のc軸方向が集電体に対して垂直に配向している電池用正極が開示されており、特許文献3には、RFスパッタリング法により製膜し、その後の加熱処理により五酸化ニオブの高配向性薄膜を得る方法が開示されており、特許文献4には、パルスレーザー・デポジション法を用いた薄膜形成方法によりスパッタリング法に比べて高い配向性が得られることが開示されている。
しかし、上記いずれにも、リチウムイオン二次電池の高出力化を可能とする正極およびその製造方法については何ら示唆がない。 However, in any of the above, there is no suggestion about a positive electrode capable of increasing the output of a lithium ion secondary battery and a manufacturing method thereof.
また、非特許文献1には、半導体単結晶基板上にLiCoO2を基板に対して(003)面が垂直に完全配向させたことが報告されているが、半導体接合の影響により不可避的に電圧が低下するため電池の正極として用いることは不適当である。
Non-Patent
本発明は、基板に対して正極活物質であるLiCoO2の特定結晶面を配向させたことにより高出力化を可能としたリチウムイオン二次電池およびその製造方法を提供することを目的とする。 An object of the present invention is to provide a lithium ion secondary battery and a method for manufacturing the same, which can increase the output by orienting a specific crystal plane of LiCoO 2 that is a positive electrode active material with respect to a substrate.
上記の目的を達成するために、本発明のリチウムイオン二次電池は、金属単結晶基板面に(003)面を垂直に配向させてエピタキシャル成長したLiCoO2単結晶の薄膜から成る正極を有することを特徴とする。 In order to achieve the above object, the lithium ion secondary battery of the present invention has a positive electrode made of a thin film of LiCoO 2 single crystal epitaxially grown with the (003) plane vertically oriented on the surface of the metal single crystal substrate. Features.
上記本発明のリチウムイオン二次電池を製造する方法は、本発明によれば、金属単結晶基板面上にLiCoO2の(003)面を垂直に配向させてエピタキシャル成長させることにより正極を形成することを特徴とする。 According to the present invention, the method of manufacturing a lithium ion secondary battery according to the present invention forms a positive electrode by epitaxially growing a (003) plane of LiCoO 2 vertically on a metal single crystal substrate surface. It is characterized by.
LiCoO2は、CoO2層(O/Co/Oの3層領域)と、Li層とが交互に積層した岩塩型結晶構造を有し、CoO2層で構成される(003)面の間をLiイオンが出入りすることによりリチウムイオン二次電池の充放電が行なわれる。 LiCoO 2 is, CoO 2 layer (the third layer region of the O / Co / O), has a rock-salt crystal structure in which a Li layer alternately laminated, between the configured (003) plane in CoO 2 layers Lithium ion secondary batteries are charged and discharged when Li ions enter and exit.
本発明においては、基板面にLiCoO2をエピタキシャル成長させることにより(003)面を基板面に対して垂直配向させたことにより、Liイオンの出入りが容易になり、リチウムイオン二次電池の高出力化が可能になる。 In the present invention, by allowing LiCoO 2 to grow epitaxially on the substrate surface, the (003) surface is oriented perpendicularly to the substrate surface, thereby making it easier for Li ions to enter and exit, and to increase the output of the lithium ion secondary battery. Is possible.
従来は、基板面に対して(003)面を垂直に配向させることができなかった。 Conventionally, the (003) plane could not be oriented perpendicular to the substrate surface.
図1に、本発明のリチウムイオン二次電池の正極構造を模式的に示す。 FIG. 1 schematically shows a positive electrode structure of a lithium ion secondary battery of the present invention.
正極10は、金属単結晶基板12の基板面12Sに(003)面を垂直に配向させてエピタキシャル成長したLiCoO2単結晶の薄膜14から成る。LiCoO2単結晶14は、CoO2層16とLi層18とが交互に〔001〕方向に積層した岩塩形結晶構造である。充電時にはLiイオン18がCoO2層16間から矢印Cで示すように放出され、放電時には矢印Dで示すようにLiイオン18がCoO2層16間に戻る。CoO2層16も、Li層18も、それぞれ(003)面を規定しており、CoO2層16とLi層18の両方で規定する面は(006)面である。(006)面の面間隔は(003)面の面間隔の1/2である。LiCoO214の(003)面が基板面12Sに垂直であることにより、Liイオン18の出入りが最も効率的に行なわれ、高出力化ができる。
The
金属単結晶基板12としては、(110)を基板面12SとするAu基板またはPt基板を用いることができる。金属単結晶基板面12SにLiCoO214の(003)面を垂直に配向させてエピタキシャル成長を可能とするためには、基板面12Sに垂直な基板格子面間隔と、基板面12に垂直なLiCoO214の格子面間隔とが、十分に近いことが必要である。十分に近いかどうかは、一義的に決定すべきものではなく、エピタキシャル成長できるか否かによる。すなわち、用いた製膜技術によってエピタキシャル成長できればよい。本発明は、エピタキシャル成長を利用することにより、基板に対して(003)面が垂直に配向したLiCoO2薄膜を得ることを可能とした点に特徴がある。
As the metal
基板面に垂直なLiCoO214のCoO2面16と、2つのCoO2面16間の中央に挟まれているLi面18との面間隔は(003)面の面間隔の半分すなわち(006)面の面間隔であり、2.34Åである。
And CoO 2 surface 16 of LiCoO 2 14 perpendicular to the substrate surface, the surface distance between the
(110)面を基板面12SとするAu基板12は、基板面12Sに垂直な面は(−111)面または(1−11)面であり、面間隔は2.35Åである。LiCoO2(006)面の面間隔2.34Åとのミスフィットは(2.35−2.34)/2.34=0.004=0.4%である。
In the
(110)面を基板面12SとするPt基板12は、基板面12Sに垂直な面は(−111)面または(1−11)面であり、面間隔は2.29Åである。LiCoO2(006)面の面間隔2.34Åとのミスフィットは(2.29−2.34)/2.34=−0.02=−2%である。
In the
Au基板またはPt基板の(110)基板面12Sに、LiCoO2(110)面が接した形で、LiCoO2〔110〕方向Rに沿ってエピタキシャル成長する。これにより(110)基板面12Sに対してLiCoO2(003)面が垂直な方向に成長する。AuまたはPtの(110)基板面12Sに垂直な(−111)面または(1−11)面の面間隔と、LiCoO2の(006)面の面間隔とが、上記の程度のミスフィットである(十分に近い)ことによって、上記のエピタキシャル成長が可能となっている。 Epitaxial growth is performed along the LiCoO 2 [110] direction R with the LiCoO 2 (110) surface in contact with the (110) substrate surface 12S of the Au substrate or Pt substrate. As a result, the LiCoO 2 (003) plane grows in a direction perpendicular to the (110) substrate surface 12S. The gap between the (−111) plane or the (1-11) plane perpendicular to the (110) substrate plane 12S of Au or Pt and the plane spacing of the (006) plane of LiCoO 2 are the above-mentioned misfit. By being (close enough), the above epitaxial growth is possible.
〔実施例1〕
本発明のリチウムイオン二次電池正極を構成するLiCoO2薄膜を下記の方法により製造した。
[Example 1]
A LiCoO 2 thin film constituting the positive electrode of the lithium ion secondary battery of the present invention was produced by the following method.
<作製手法>
PLD(Pulse Laser Deposition:パルスレーザー・デポジション法)
真空チャンバー内で、薄膜の材料となるターゲットにパルスレーザーを照射することでプラズマ化させ、ターゲットの対角上に設置した基板に堆積することで薄膜を作成する。
<Production method>
PLD (Pulse Laser Deposition)
In a vacuum chamber, a target, which is a material of the thin film, is irradiated with a pulsed laser to be turned into plasma, and deposited on a substrate placed on the diagonal of the target to form a thin film.
<装置>
真空チャンバー:AOV(株)社製
KrFエキシマレーザー(248nm):Coherent GmbH社製
<成膜条件>
レーザー出力:150mJ、10Hz
成膜時間:1h
酸素分圧:0.025torr
基板:単結晶Au(110)基板
(750℃×12h 加熱処理してから使用)
基板温度:600℃
基板回転速度:30rpm
ターゲット:LiCoO2焼結体(φ20mm×5mm)
ターゲット回転速度:60rpm
基板−ターゲット距離:7.5cm
〔実施例2〕
本発明のリチウムイオン二次電池正極を構成するLiCoO2薄膜を実施例1と同じ条件で製造した。ただし、基板として単結晶Pt(110)基板を用いた。
<Device>
Vacuum chamber: AOV Co., Ltd. KrF excimer laser (248 nm): Coherent GmbH <Film formation conditions>
Laser power: 150mJ, 10Hz
Deposition time: 1h
Oxygen partial pressure: 0.025 torr
Substrate: Single crystal Au (110) substrate
(Used after heat treatment at 750 ° C x 12h)
Substrate temperature: 600 ° C
Substrate rotation speed: 30 rpm
Target: LiCoO 2 sintered body (φ20mm × 5mm)
Target rotation speed: 60rpm
Substrate-target distance: 7.5cm
[Example 2]
The LiCoO 2 thin film constituting the lithium ion secondary battery positive electrode of the present invention was produced under the same conditions as in Example 1. However, a single crystal Pt (110) substrate was used as the substrate.
実施例1および実施例2により、それぞれAu(110)基板上およびPt(110)基板上に成膜されたLiCoO2薄膜について、CuKα線によりX線回折を行った。out of plane測定およびin plane測定による測定結果をまとめて表1に示す。out of plane測定(一般的な測定)では基板法線方向に配向した結晶面のピークが現われ、in plane測定では基板に対して垂直な面のピークが現われる。 According to Example 1 and Example 2, the LiCoO 2 thin film formed on the Au (110) substrate and the Pt (110) substrate, respectively, was subjected to X-ray diffraction using CuKα rays. Table 1 summarizes the measurement results of out-of-plane measurement and in-plane measurement. In out-of-plane measurement (general measurement), the peak of the crystal plane oriented in the normal direction of the substrate appears. In in-plane measurement, the peak of the plane perpendicular to the substrate appears.
表1には、(003)〔2θ≒18.9°〕、(101)〔2θ≒37.4°〕、(104)〔2θ≒45.2°〕、(110)〔2θ≒66.4°〕の回折ピークの有無を示した。表1に示したように、out of plane測定では(003)面と直角の関係にある(110)面のみが観測され、in plane測定では(003)面のみが観測された。 Table 1 shows (003) [2θ≈18.9 °], (101) [2θ≈37.4 °], (104) [2θ≈45.2 °], (110) [2θ≈66.4. The presence or absence of a diffraction peak of [°]. As shown in Table 1, only the (110) plane perpendicular to the (003) plane was observed in the out of plane measurement, and only the (003) plane was observed in the in plane measurement.
この結果から、実施例1(単結晶Au(110)基板使用)、実施例2(単結晶Pt(110)基板使用)のいずれの場合にも、基板面に対して(003)面が完全に垂直に配向しているLiCoO2薄膜が得られたことが分かる。 From this result, in both cases of Example 1 (using a single crystal Au (110) substrate) and Example 2 (using a single crystal Pt (110) substrate), the (003) plane is completely relative to the substrate surface. It can be seen that a vertically oriented LiCoO 2 thin film was obtained.
<従来例との比較>
表2に、前述の特許文献1に開示されているc軸が基板法線に対して75°傾いているLiCoO2薄膜についてのout of plane測定による配向度を、実施例1と比較して示す。
<Comparison with conventional example>
Table 2 shows the degree of orientation by out-of-plane measurement of the LiCoO 2 thin film in which the c-axis disclosed in the above-mentioned
配向度を(003)面による回折強度に対する強度比で比較する。 The degree of orientation is compared by the intensity ratio to the diffraction intensity by the (003) plane.
本発明の実施例1では、表1に示したようにout of plane測定では(003)面と直角の関係にある(110)面のみが観測されたのに対応して、表2において(003)面、(101)面、(104)面の強度比はいずれも0であり、基板面に対して(003)が垂直に配向していることが明瞭に示されている。 In Example 1 of the present invention, as shown in Table 1, in the out of plane measurement, only the (110) plane perpendicular to the (003) plane was observed. ) Plane, (101) plane, and (104) plane are all 0, and it is clearly shown that (003) is oriented perpendicular to the substrate plane.
これに対して、特許文献1の従来例では(003)面、(101)面、(104)面が大きな強度比で観測されており、基板面に対する特定方位の配向は認められない。なお、特許文献1には(110)面の回折データが示されていなかったため、(110)面の回折強度比は0と推察する。
On the other hand, in the conventional example of
<原子配列>
図2に、実施例1のAu基板とその上にエピタキシャル成長したLiCoO2との界面におけるAu原子とLiCoO2のO原子との配列関係を示す。
<Atomic arrangement>
Figure 2 shows the arrangement relationship between the Au atoms and LiCoO 2 O atoms at the interface between the Au substrate of Example 1 and LiCoO 2 was epitaxially grown thereon.
同図に示したように、Au[1−11]方向とLiCoO2[006]方向とが一致しており、これらの方向の隣接O原子(図中●)間距離と隣接Au原子(図中○)間距離とがほぼ等しい。更に、Au(1−11)面とLiCoO2(006)面とが規則性を持って周期的に重なっている。つまり重なり合うことで安定に存在している。 As shown in the figure, the Au [1-11] direction and the LiCoO 2 [006] direction coincide with each other, the distance between adjacent O atoms (● in the figure) and the adjacent Au atom (in the figure). ○) The distance is almost equal. Furthermore, the Au (1-11) plane and the LiCoO 2 (006) plane periodically overlap with regularity. In other words, it exists stably by overlapping.
図2は、Au基板の場合を示したが、Pt基板の場合についても、LiCoO2エピタキシャル薄膜との間で同様の原子配列関係が成立している。 Although FIG. 2 shows the case of the Au substrate, the same atomic arrangement relationship is established with the LiCoO 2 epitaxial thin film also in the case of the Pt substrate.
AuまたはPt基板とLiCoO2エピタキシャル薄膜との接触面において、AuおよびPt基板の最表面の原子配列とLiCoO2薄膜の最表面の原子配列とが重なった点が周期的に規則的に配列した組み合わせを選択したことで、本発明の(110)配向したLiCoO2薄膜を得ることができる。 A combination in which the points where the atomic arrangement on the outermost surface of the Au and Pt substrate overlaps the atomic arrangement on the outermost surface of the LiCoO 2 thin film are regularly and regularly arranged at the contact surface between the Au or Pt substrate and the LiCoO 2 epitaxial thin film By selecting this, the (110) -oriented LiCoO 2 thin film of the present invention can be obtained.
〔比較例〕
LiCoO2薄膜を実施例1と同じ条件で製造した。ただし、基板として単結晶Au(111)基板を用いた。実施例1、2と同様にX線回折を行った。結果を表3に示す。
[Comparative example]
A LiCoO 2 thin film was produced under the same conditions as in Example 1. However, a single crystal Au (111) substrate was used as the substrate. X-ray diffraction was performed in the same manner as in Examples 1 and 2. The results are shown in Table 3.
表3に示したように、out of plane測定では(003)面のみが観測され、in plane測定では(003)面と直角の関係にある(110)面のみが観測された。 As shown in Table 3, only the (003) plane was observed in the out of plane measurement, and only the (110) plane perpendicular to the (003) plane was observed in the in plane measurement.
この結果から、Au(111)基板面に対して(003)面が完全に平行に配向しているLiCoO2が形成されたことが分かる。すなわち、本発明の狙いとする基板面に対して(003)面が垂直に配向したLiCoO2薄膜は得られなかった。 From this result, it can be seen that LiCoO 2 was formed in which the (003) plane was perfectly parallel to the Au (111) substrate surface. That is, a LiCoO 2 thin film in which the (003) plane was oriented perpendicular to the target substrate surface of the present invention could not be obtained.
<充放電特性>
実施例1および比較例で作製したAu基板/LiCoO2正極をそれぞれ用いた下記セル構成のリチウムイオン二次電池を作製し、下記の条件で充放電特性を測定した。
<Charge / discharge characteristics>
A lithium ion secondary battery having the following cell configuration using each of the Au substrate / LiCoO 2 positive electrode prepared in Example 1 and the comparative example was manufactured, and charge / discharge characteristics were measured under the following conditions.
≪セル構成≫
正極…実施例1または比較例にて成膜
負極…Li金属(本城金属製)
電解液…1M LiO4/EC−DEC(富山薬品製)
セパレーター…UP3025(宇部興産製)
≪測定条件≫
装置:1286型ポテンショスタット/ガルバノスタット(Solartron社製)
治具(セル):トムセル(日本トムセル製)
測定環境:25℃高温槽内
測定条件: 測定電位…3.0〜4.3V
挿引速度…0.1mV/sec
図3に測定結果を示す。図中、実線の電位/電流曲線で示した実施例1によるセルでは、充電時および放電時共に3.9V付近の電位でシャープなピーク(酸化還元反応)が認められ、Liイオンの出入りが盛んに行なわれることが分かる。これに対して、破線の電位/電流曲線で示した比較例によるセルでは、充電時も放電時も明瞭なピークは認められず、Liイオンの移動がほとんど行なわれないことが分かる。
≪Cell configuration≫
Positive electrode: film formation in Example 1 or Comparative Example Negative electrode: Li metal (made by Honjo Metal)
Electrolyte ... 1M LiO4 / EC-DEC (Toyama Pharmaceutical)
Separator: UP3025 (Ube Industries)
≪Measurement conditions≫
Apparatus: 1286 type potentiostat / galvanostat (manufactured by Solartron)
Jig (cell): Tomcell (made by Nippon Tomcell)
Measurement environment: in a high temperature bath at 25 ° C. Measurement conditions: Measurement potential: 3.0 to 4.3 V
Insertion speed: 0.1 mV / sec
FIG. 3 shows the measurement results. In the figure, in the cell according to Example 1 shown by the solid line potential / current curve, a sharp peak (oxidation-reduction reaction) was observed at a potential of about 3.9 V both during charging and discharging, and Li ions entered and exited actively. It can be seen that On the other hand, in the cell according to the comparative example shown by the broken line potential / current curve, no clear peak is observed at the time of charging and discharging, and it is understood that the movement of Li ions is hardly performed.
このように、本発明により単結晶Au(110)基板面に(003)面を垂直に配向させてエピタキシャル成長したLiCoO2単結晶の薄膜から成る正極を有するリチウムイオン二次電池は、充放電時のLiイオンの出入りが向上し、高出力化が可能である。 Thus, according to the present invention, a lithium ion secondary battery having a positive electrode made of a thin film of LiCoO 2 single crystal epitaxially grown with the (003) plane oriented vertically on the single crystal Au (110) substrate surface is the Li ion entry / exit is improved, and high output is possible.
本発明によれば、基板に対して正極活物質であるLiCoO2の特定結晶面を配向させたことにより高出力化を可能としたリチウムイオン二次電池およびその製造方法が提供される。 According to the present invention, the positive electrode active high output capable and the lithium ion secondary battery and a manufacturing method thereof by a specific crystal plane of LiCoO 2 is a material was aligned with respect to the substrate is provided.
10 正極
12 金属単結晶基板
12S 基板面(基板(110)面)
14 LiCoO2単結晶薄膜
16 CoO2層
18 Li層(Liイオン)
R LiCoO2[110]方向
C 充電時のLiイオン18の移動方向
D 放電時のLiイオン18の移動方向
10
14 LiCoO 2 single crystal
R LiCoO 2 [110] direction C Movement direction of
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