JP2009290033A - Electronic device wafer module and its production process, electronic device module, electronic information equipment - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To easily and exactly detect (alignment) superposition of a cover glass and a semiconductor wafer. <P>SOLUTION: A transparent glass substrate 24 to cover and protect each solid image pickup device 21 is joined to a semiconductor substrate 22 of an electronic device wafer on which the solid image pickup devices 21 are formed. On at least one surface of this transparent glass substrate 24, an infrared cut filter substrate 25 and an optical low pass filter 26 as optical filters are formed corresponding to the each solid image pickup device 21. Part of or the whole lines of the optical filter along dicing lines D to make a plurality of electronic device modules 2 into individual pieces are removed. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to an electronic element wafer module in which an optical filter layer is provided on a cover glass that protects a plurality of electronic elements, a method for manufacturing the electronic element wafer module, and the electronic element wafer module separated into individual electronic elements. Electronic element module, electronic element module on which an optical element is further joined, digital camera such as a digital video camera and digital still camera using these electronic element modules as an image input device in an imaging unit, and an image input camera The present invention relates to electronic information devices such as scanner devices, facsimile devices, and mobile phone devices with cameras.

  2. Description of the Related Art Conventionally, digital cameras and video cameras using a sensor module as an electronic element module of this type as an image input device in an imaging unit have been widely used.

  Currently used sensor modules include, for example, a solid-state image sensor chip (bare chip) in which a solid-state image sensor is provided on a silicon semiconductor substrate, and a ceramic package that houses the solid-state image sensor chip. And a transparent cover glass for sealing the package. In the solid-state image sensor chip housed in this package, the electrode pads provided on the solid-state image sensor chip and the connection terminals of the package are electrically connected by wire bonding, and the external connection terminals of the package are on the mounting substrate. By being mounted on, it is connected to the circuit on the mounting board.

  In addition, a solid-state imaging device is incorporated as an electronic element in a small electronic information device such as a mobile phone device or an electronic notebook, and an imaging function is added. In order to make it easy to incorporate shooting functions into such small electronic information devices, an optical unit incorporating a solid-state imaging device and an imaging optical system and a mounting board provided with a control circuit are assembled in advance and unitized. A camera module is provided.

  In Patent Document 1, a frame provided with a lens so as to cover the image sensor is disposed on the substrate so that the image sensor and the lens on the substrate are disposed with a gap. An infrared filter is formed between the image sensor and the lens.

  In Patent Document 2, in a solid-state imaging device configured on a solid-state imaging device chip by a flat plate portion made of a transparent material and a frame portion disposed on a lower surface edge of the flat plate portion, the frame portion is made of an inorganic material. By forming and bonding the frame portion made of this inorganic material onto the solid-state image sensor chip with an adhesive, the space between the solid-state image sensor chip having the frame portion interposed therebetween and the transparent flat plate portion is hermetically sealed. As a part.

  Patent Document 3 discloses a conventional camera module in which an infrared cut filter, an optical low-pass filter, and an antireflection filter are incorporated in order to improve image quality. This conventional camera module is shown in FIG.

  FIG. 15 is a longitudinal sectional view of a main part schematically showing an example of a conventional camera module disclosed in Patent Document 3 using a ceramic package type solid-state imaging device.

  In FIG. 15, a conventional solid-state imaging device 100 includes a solid-state imaging element chip 103 in which a solid-state imaging element 102 is provided on a semiconductor substrate 101, a package 104 that houses the solid-state imaging element chip 103, and a package 104 that is sealed. The cover glass 105 is stopped and is mounted on the mounting substrate 106.

  The conventional optical unit 107 includes a solid-state imaging device storage unit 108 that stores the solid-state imaging device 100 therein, and a lens barrel unit 110 that holds the imaging lens 109 fixedly. It is fixed. The solid-state imaging device 100 and the optical unit 107 thereon constitute a camera module 111.

  In the camera module 111 and the digital camera, an infrared cut filter 112 and an optical low-pass filter 113 are incorporated to improve image quality. In addition, in order to prevent reflection in the solid-state imaging device 100, an antireflection filter 114 may be attached to the upper surface of the cover glass 105.

  The infrared cut filter 112 and the optical low-pass filter 113 are disposed in the optical unit 107 and between the solid-state imaging device 100 and the imaging lens 109. However, the size of the camera module 111 is increased due to the mounting space. There was a problem.

  In order to solve this, an optical filter such as a sheet-like infrared cut filter (infrared removal filter) can be pasted on the cover glass of the solid-state image pickup device as in the solid-state image pickup device of Patent Document 1.

  Further, in a small electronic information device, the size of the solid-state imaging device has a large influence on the external size, and therefore, the solid-state imaging device is desired to be downsized. To reduce the size of the solid-state imaging device, Patent Document 2 discloses a solid-state imaging device using a wafer level chip size package (hereinafter referred to as WLCSP) that completes packaging in a semiconductor process.

This WLCSP type solid-state imaging device has a semiconductor substrate provided with a solid-state imaging element, and a cover glass that is bonded to the semiconductor substrate and protects the solid-state imaging element, and the size thereof is a ceramic package type. It becomes very small with the bare chip of the solid-state imaging device. In order to further reduce the size of the solid-state image pickup device, a solid-state image pickup device having a through electrode structure in which the pad area for wire bonding is reduced and the back surface connection of the solid-state image pickup device has been studied.
JP 2004-064272 A JP 2002-231921 A JP 2006-032886 A

  In the conventional solid-state imaging device, an optical filter layer is formed on the cover glass (transparent substrate), and the semiconductor wafer and the transparent substrate are bonded to cover and protect the solid-state imaging device as an electronic element on the semiconductor wafer. The semiconductor wafer and the transparent substrate are collectively cut for each solid-state imaging device. Thus, a method has been proposed in which an optical filter layer formed by cutting together with a semiconductor wafer and a transparent substrate is formed on at least one surface of the transparent substrate at a low cost.

  However, when joining the cover glass on which the infrared cut filter is formed as the optical filter layer and the semiconductor wafer on which the solid-state imaging device is formed, the alignment mark provided on the semiconductor wafer side and the cover glass side are overlapped by the infrared camera. Alignment position detection (alignment) becomes difficult. In addition, in the progress of downsizing of the solid-state imaging device, the optical characteristics of the infrared cut filter as the optical filter formed on the cover glass surface during the formation of the back-side connection through electrode, even in the through electrode formation pattern processing process, The semiconductor wafer below the filter cannot be confirmed more clearly, making it difficult to detect the overlay position (alignment) between the cover glass and the semiconductor wafer.

  The present invention solves the above-mentioned conventional problems, and an electronic element wafer module capable of easily and accurately performing overlay detection (alignment) between a cover glass and a semiconductor wafer, a method for manufacturing the electronic element wafer module, An electronic element module obtained by dividing the electronic element wafer module into pieces for each electronic element, an electronic element module having an optical element bonded thereto, and using these electronic element modules as an image input device for an imaging unit, for example, with a camera An object is to provide an electronic information device such as a mobile phone device.

  In the electronic element wafer module of the present invention, a transparent support substrate that covers and protects each of the plurality of electronic elements is bonded onto the electronic element wafer on which the plurality of electronic elements are formed, and at least one surface of the transparent support substrate In addition, an optical filter is formed corresponding to the electronic element, and the optical filter has a part or all of the line removed along a dicing line for separating into a plurality of electronic element modules. Thus, the above object is achieved.

  Preferably, the optical filter in the electronic element wafer module of the present invention is formed in at least one of a plate shape, a sheet shape, a film shape, and a layer shape bonded onto the transparent support substrate.

  Further preferably, the optical filter in the electronic element wafer module of the present invention is formed on the transparent support substrate.

  Further preferably, the optical filter in the electronic element wafer module of the present invention is at least one of an infrared cut filter and an optical low-pass filter.

  Further preferably, an antireflection filter is further formed as an optical filter in the electronic element wafer module of the present invention.

  Furthermore, preferably, the optical filter in the electronic element wafer module of the present invention is removed in a lattice shape along the dicing line.

  Further, preferably, at least two alignment marks are arranged on the electronic element wafer side in the electronic element wafer module of the present invention, and the alignment marks are arranged so as to be aligned with the lattice-shaped dicing lines.

  Further preferably, the optical filter in the electronic element wafer module of the present invention is removed in a shape region that can be aligned with an alignment mark on the electronic element wafer side when the electronic element wafer and the transparent support substrate are bonded. .

  Further preferably, the optical filter in the electronic element wafer module of the present invention is removed in a shape region that can be aligned with an alignment mark on the electronic element wafer side when the electronic element wafer and the transparent support substrate are bonded. At the same time, the alignment marks are arranged along the dicing lines so as to be aligned with the dicing lines.

  Further preferably, the shape region in the electronic element wafer module of the present invention is a square, a rectangle or a rhombus.

  The method of manufacturing an electronic element wafer module according to the present invention includes an optical filter forming step of forming an optical filter on at least one surface of a transparent support substrate, and a dicing line for dividing the electronic element module into a plurality of electronic element modules. An optical filter partial removal process for removing all of the parts or lines from the optical filter, and a substrate bonding process for bonding the semiconductor wafer on which the plurality of electronic elements are formed and the transparent support substrate, This achieves the above object.

  Preferably, the optical filter forming step in the method of manufacturing an electronic element wafer module according to the present invention is performed by bonding at least one of a plate shape, a sheet shape, a film shape, and a layer shape to the transparent support substrate. It consists of the process of forming a film.

  Further preferably, in the optical filter forming step in the method for manufacturing an electronic element wafer module of the present invention, at least one of an infrared cut filter and an optical low-pass filter is formed as the optical filter.

  Still preferably, in the method for manufacturing an electronic element wafer module according to the present invention, in the optical filter partial removal step, the optical filter is removed in a lattice shape along the dicing line.

  Furthermore, preferably, an alignment mark is arranged on the electronic element wafer side so as to be aligned with respect to a lattice-shaped dicing line in the method for manufacturing an electronic element wafer module of the present invention, and the substrate bonding step includes The semiconductor wafer and the transparent support substrate are bonded together by aligning using a lattice-shaped dicing line and the alignment mark.

  Further preferably, in the method of manufacturing an electronic element wafer module according to the present invention, the optical filter partial removal step may be performed by aligning an alignment mark and a position arranged on the electronic element wafer side when the electronic element wafer and the transparent support substrate are bonded. The optical filter is removed in a shape area that can be matched.

  Further preferably, in the method of manufacturing an electronic element wafer module according to the present invention, the optical filter partial removal step can be aligned with an alignment mark on the electronic element wafer side when the electronic element wafer and the transparent support substrate are bonded. The optical filter is removed from the shape region, and the optical filter is removed in a lattice pattern along the dicing line.

  The electronic element module of the present invention is separated from the electronic element wafer module of the present invention by cutting the semiconductor wafer and the transparent support substrate along the center line of the dicing line for each electronic element. As a result, the above object is achieved.

  The electronic element module of the present invention includes the electronic element module of the present invention and an optical system disposed on the electronic element of the electronic element module or an optical unit in which the optical system is incorporated. This achieves the above object.

  Preferably, the electronic element in the electronic element module of the present invention is an imaging element having a plurality of light receiving sections that image-convert image light from a subject.

  Further preferably, the electronic element in the electronic element module of the present invention has a light emitting element for generating outgoing light and a light receiving element for receiving incident light.

  More preferably, the optical system in the electronic element module of the present invention is a lens module, and the electronic element is an imaging element.

  Further preferably, the optical system in the electronic element module of the present invention is either a prism module or a hologram element module, and the electronic element is a light emitting element and a light receiving element.

  The electronic information device according to the present invention uses the electronic element module according to the present invention as a sensor module in an imaging unit, thereby achieving the object.

  An electronic information device according to the present invention uses the electronic element module according to the present invention as an information recording / reproducing unit, thereby achieving the above object.

  With the above configuration, the operation of the present invention will be described below.

  In the present invention, a transparent support substrate that covers and protects each of the plurality of electronic elements is bonded onto the electronic element wafer on which the plurality of electronic elements are formed, and the electron is mounted on at least one surface of the transparent support substrate. An optical filter is formed corresponding to the element, and a part or all of the optical filter along the dicing line for separating the optical filter into a plurality of electronic element modules is removed.

  Thereby, since the optical filter is partially or completely removed along the dicing line, the semiconductor wafer below the optical filter can be more clearly confirmed, and the semiconductor substrate as the semiconductor wafer, the transparent support substrate, Can be easily and accurately detected.

  As described above, according to the present invention, since the optical filter is partially or entirely removed along the dicing line, the semiconductor wafer below the optical filter can be more clearly confirmed, and the semiconductor as a semiconductor wafer Superposition detection (alignment) between the substrate and the transparent support substrate can be performed easily and accurately.

  Hereinafter, an electronic element wafer module according to the present invention, a manufacturing method thereof, an example of an electronic element module obtained by dividing the electronic element wafer module for each electronic element is referred to as Embodiment 1, and an optical element is further provided on the electronic element module. An example of a bonded electronic element module is referred to as a second embodiment, and an example of an electronic information device such as a mobile phone device with a camera using any one of these electronic element modules as an image input device in an imaging unit is described as a third embodiment. This will be described in detail with reference to the drawings.

(Embodiment 1)
FIG. 1 is a longitudinal sectional view of an essential part showing a configuration example of a camera module when the electronic element module according to Embodiment 1 of the present invention is applied to the camera module.

  In FIG. 1, a camera module 1 of Embodiment 1 includes a sensor module 2, a mounting board 3 on which the sensor module 2 is mounted, and an imaging lens 41 mounted on the mounting board 3 and on the sensor module 2. The optical unit 4 is arranged.

  2 is an external perspective view showing a configuration example of the sensor module 2 of FIG. 1, and FIG. 3 is a longitudinal sectional view of an essential part thereof.

  2 and 3, the sensor module 2 is mounted on the semiconductor substrate 22 so as to surround the periphery of the solid-state image sensor 21 and the semiconductor substrate 22 having a solid-state image sensor 21 as an electronic element formed on the upper surface. A frame-shaped spacer 23, a cover glass 24 (glass substrate) as a transparent support substrate that is attached on the spacer 23 and covers and covers the solid-state imaging device 21, and the cover glass 24 And an infrared cut filter substrate 25 and an optical low-pass filter substrate 26 which form an optical filter substrate.

  The semiconductor substrate 22 is obtained by dividing a silicon semiconductor wafer into pieces in a rectangular shape, and a solid-state imaging element 21 is formed at the center of the upper surface. The solid-state imaging device 21 is arranged in a matrix, for example, and a plurality of light receiving elements (a plurality of light receiving portions) that photoelectrically convert subject light (incident light) and signal charges accumulated in these light receiving elements in a vertical direction. Furthermore, it has a charge coupled device (CCD) that transfers charges in the horizontal direction. An RGB color filter and a condensing microlens are laminated on the plurality of light receiving elements. In addition, as this solid-state image sensor 21, it can replace with this CCD image sensor and can also use a C-MOS image sensor.

  The spacer 23 has a square shape in which a square or rectangular opening 27 is formed in the central region, and is joined to the upper surface of the semiconductor substrate 22 so as to surround the outer periphery of the solid-state imaging device 21. The spacer 23 is made of an inorganic material such as silicon. The spacer 23 forms a sealed space between the surface-side solid-state imaging device 21 and the lower surface of the cover glass 24, and the microlenses of the surface-side solid-state imaging device 21 physically interfere with the lower surface of the cover glass 24. To prevent it.

  The cover glass 24 is joined to the upper surface of the spacer 23 so as to close the opening 27 of the spacer 23. The cover glass 24 is made of low α-ray glass that emits less α rays in order to prevent each light receiving element (each light receiving portion) of the solid-state imaging device 21 from being broken by α rays.

  Around the central portion (imaging region) where the solid-state imaging device 21 is provided, a plurality of external connection terminals 28 are provided through the semiconductor substrate 22. Each of these external connection terminals 28 is electrically connected to the wiring formed on the surface of the semiconductor substrate 22 and is electrically connected to the solid-state image pickup device 21, and the sensor module 2 and the mounting substrate 3 below the sensor module 2. The conductive layer is directly electrically connected to each other, and the wiring area by wire bonding is omitted, and the chip size is further reduced in terms of area.

  The infrared cut filter substrate 25 and the optical low-pass filter substrate 26 thereon are provided for improving the image quality of the sensor module 2. This infrared cut filter substrate 25 is for preventing ghost and fog caused by infrared light by cutting infrared light in a specific wavelength region. The optical low-pass filter substrate 26 is for preventing the occurrence of false colors and color moire. Since the infrared cut filter substrate 25 and the optical low-pass filter substrate 26 are bonded on the cover glass 24, it is necessary to provide a space for mounting the infrared cut filter substrate 25 and the optical low-pass filter substrate 26 in the optical unit 4. The camera module 1 can be downsized. In order to prevent reflection in the sensor module 2, an antireflection filter layer may be provided on the lower surface and / or upper surface of the cover glass 24.

  The mounting substrate 3 is a rigid substrate using a glass epoxy substrate, a ceramic substrate, or the like, and the sensor module 2 and the optical unit 4 that covers these are mounted thereon. The mounting substrate 3 is provided with a control circuit such as a signal processing circuit that performs various signal processing on the image pickup signal from the sensor module 2.

  The optical unit 4 includes an imaging lens 41 for condensing subject light on the solid-state imaging device 21 (imaging region), and a lens holder 42 that holds the imaging lens 41. The lens holder 42 includes a box-shaped base portion 42 a that is mounted on the mounting substrate 3 and covers the sensor module 2, and a cylindrical lens barrel portion 42 b that holds the imaging lens 41.

  Hereinafter, a method for manufacturing a sensor wafer module as a method for manufacturing an electronic element wafer module, and a method for manufacturing the sensor module 2 as an electronic element module to be collectively cut from the sensor wafer module will be described with reference to the flowchart of FIG. 4 and FIG. It demonstrates in detail, referring each process sectional drawing of FIG.5 (f).

  As shown in FIG. 4, first, in the first step, an optical filter substrate (which may be a sheet or a film in addition to the substrate) is formed on a glass substrate that is a base material of the cover glass 24. As shown in FIGS. 5A and 6, the optical filter substrate is formed on an infrared cut filter having substantially the same size on a glass substrate (the same number is used as the glass substrate 24) that is a base material of the cover glass 24. The substrate 25 is bonded with an adhesive 29, and the optical low-pass filter substrate 26 is bonded thereon with an adhesive 29.

  As the adhesive 29 used for joining the glass substrate 24 and the infrared cut filter substrate 25, for example, a UV adhesive that becomes transparent after solidification is used. The adhesive 29 is thinly applied on the glass substrate 24 with a uniform thickness. The glass substrate 24 and the infrared cut filter substrate 25 are bonded together in a vacuum environment, for example, in order to prevent air from entering between them. Thereafter, the adhesive 29 is solidified by irradiating ultraviolet rays through the glass substrate 24, and the glass substrate 24 and the infrared cut filter substrate 25 are firmly bonded. Note that the optical low-pass filter substrate 26 is bonded to the infrared cut filter substrate 25 in the same procedure as described above, and thus detailed description thereof is omitted here.

  Next, in the second optical filter partial removal step, as shown in FIG. 5B, the optical filters (infrared cut filter substrate 25 and optical low-pass filter substrate 26) installed above the glass substrate 24 are subjected to sensors. The other portion corresponding to the dicing line D between the adjacent solid-state imaging devices 21 is left so as to include or cover the solid-state imaging device region (imaging region) necessary for the module 2 (the grid-shaped dicing line in FIG. 10). (Corresponding to D). The removal method at this time is implemented by general photolithography and etching operations.

  Subsequently, in the third spacer formation step, as shown in FIG. 5C, a large number of spacers 23 that surround each solid-state imaging device 21 are formed on the lower surface side of the glass substrate 24. The spacer 23 is formed by the following procedure, for example. First, a silicon spacer wafer is bonded to the lower surface side of the glass substrate 24 with an adhesive. Next, a resist mask having the shape of the spacer 23 (the shape having the opening 27 in the center) is formed on the spacer wafer by photolithography. Further, the portions not covered with the mask are removed by plasma etching, whereby a large number of spacers 23 (spacers 23 for each solid-state imaging device 21) are formed on the glass substrate 24. The resist mask after etching is removed by ashing or the like.

  Thereafter, in the fourth and substrate bonding step, as shown in FIG. 5D, the glass substrate 24 and the semiconductor substrate 22 which is a semiconductor wafer on which a large number of solid-state imaging elements 21 are formed are bonded. An alignment sticking device is used for this joining. This alignment sticking apparatus is based on each orientation flat or notch 30 between the glass substrate 24 and the semiconductor substrate 22 which is a semiconductor wafer, and on the side of the semiconductor substrate 22 on the basis of the lattice-shaped dicing line D in FIG. The four vertical and horizontal square (or rectangular) alignment marks A as shown in FIG. In this case, both the glass substrate 24 and the semiconductor substrate 22 are enlarged and confirmed on a display screen by a camera so that a cross-shaped dicing line D is positioned between four vertical and horizontal square alignment marks A. The position is adjusted in the XY direction and the rotational direction. Furthermore, the glass substrate 24 and the semiconductor substrate 22 which is a semiconductor wafer are accurately bonded by superimposing and pressing both. By bonding the glass substrate 24 and the semiconductor substrate 22 that is a semiconductor wafer, each solid-state imaging device 21 on the semiconductor substrate 22 that is a semiconductor wafer is covered and sealed by the spacer 23 and the glass substrate 24. The dust generated by the subsequent processes does not adhere to the solid-state imaging device 21.

  Further, in the fifth through electrode / external connection terminal forming step, as shown in FIG. 5E, circuit connection is performed to an element formed through the front surface from the back surface of the semiconductor substrate 22 which is a semiconductor wafer. The through electrode structure and the external connection terminals 28 connected thereto are formed. Existing photolithography, etching, and plating techniques are used to form the through electrode structure and the external connection terminals 28 connected thereto. Thus, a semiconductor substrate 22 which is a semiconductor wafer, a glass substrate 24 bonded thereto, an infrared cut filter substrate 25 bonded onto the glass substrate 24, and an optical low-pass filter substrate 26 bonded thereon. A sensor wafer module having a multilayer structure is manufactured.

  Thereafter, in the sixth dicing step, as shown in FIG. 5 (f), a semiconductor substrate 22 which is a semiconductor wafer, a glass substrate 24 bonded thereto, and an infrared cut filter bonded on the glass substrate 24. A sensor wafer module having a laminated structure of the substrate 25 and the optical low-pass filter substrate 26 bonded thereon is diced by a dicing blade at the center line Da of the dicing line D. The bonded substrates are set by fixing a dicing tape for protection on the glass substrate 24 and fixing the substrate to a dicing apparatus. The dicing apparatus uses, for example, a metal resin grindstone in which diamond abrasive grains are hardened with a resin while applying cooling water to the substrate, and the semiconductor substrate 22, the glass substrate 24, the infrared cut filter substrate 25, and the semiconductor wafer. A sensor wafer module having a laminated structure of the optical low-pass filter substrate 26 is collectively divided by a dicing line D for each solid-state imaging device 21. Thereby, the sensor module 2 separated from the sensor wafer module can be manufactured.

  When the sensor module 2 is manufactured from an 8-inch semiconductor wafer, about 2000 sensor modules 2 are simultaneously separated from the sensor wafer module and formed. In each of these 2000 sensor modules 2, when the infrared cut filter substrate 25 and the optical low-pass filter substrate 26 are individually joined, a great amount of man-hours and costs are required, but this is eliminated.

  However, as in the first embodiment, the infrared cut filter substrate 25 and the optical low-pass filter substrate 26 are sequentially bonded to the glass substrate 24 by the adhesive 29, and the adjacent spacers 23 are bonded together with the semiconductor substrate 22 which is a semiconductor wafer. Since the fourth substrate bonding step can be performed once by cutting with a dicing blade at the center line Da of the dicing line D, the man-hour and the cost can be greatly reduced. . Furthermore, the area of the sensor module 2 can be reduced by making electrical connection with the solid-state imaging device 21 from the back side of the substrate.

  The completed sensor module 2 is mounted on the mounting substrate 3 together with the optical unit 4 through a function inspection and the like, and is assembled as the camera module 1.

  The camera module 1 is incorporated as a solid-state imaging device including the sensor module 2 in a small electronic information device such as a mobile phone according to a third embodiment described later. In the camera module 1 of Embodiment 1, since the infrared cut filter substrate 25 and the optical low-pass filter substrate 26 are formed on the glass substrate 24 that is a cover glass, the optical unit 4 can be reduced in size, and the camera module 1 Can contribute to miniaturization of a small electronic information device in which is incorporated.

  As described above, according to the first embodiment, the transparent glass substrate 24 that covers and protects each solid-state image sensor 21 is bonded to the semiconductor substrate 22 of the electronic element wafer on which each solid-state image sensor 21 is formed. An infrared cut filter substrate 25 and an optical low-pass filter substrate 26 are formed as optical filters on at least one surface of the transparent glass substrate 24 so as to correspond to the respective solid-state imaging elements 21, and the optical filter includes a plurality of electronic element modules 2. A part or all of the lines along the dicing line D to be separated into pieces are removed. As described above, since the optical filter is partially or entirely removed along the dicing line D, the semiconductor substrate 22 of the semiconductor wafer below the optical filter can be more clearly confirmed, and the semiconductor as the semiconductor wafer The overlay detection (alignment) between the substrate 22 and the transparent glass substrate 24 to which the infrared cut filter substrate 25 and the optical low-pass filter substrate 26 are bonded can be easily and accurately performed.

  In the first embodiment, the infrared cut filter substrate 25 and the optical low-pass filter substrate 26 are bonded onto the glass substrate 24 to form the optical filter substrate. However, the present invention is not limited to this, and a cover glass as shown in FIG. On the glass substrate 24, the infrared cut filter layer 25a and the optical low-pass filter layer 26a may be formed in this order by a film forming process.

  The optical filter layer is formed on the glass substrate 24, which is a cover glass by film formation, in the same manner as the above-described bonding of substrates, a CVD apparatus or a vacuum evaporation apparatus is applied to the glass substrate 24, which is a base material for the cover glass. And so on. Thereafter, as in the case of the first embodiment described above, as shown in FIG. 8, the spacer layer 23 is formed on the lower surface of the glass substrate 24, the glass substrate 24 on which the spacer layer 23 is formed, and the semiconductor wafer. A joining process with a certain semiconductor substrate 22 and a dicing process for each solid-state imaging device 21 are performed, and a large number of sensor modules 2A are manufactured from the sensor wafer module in a lump.

  As described above, even when the optical filter layer is formed by the film forming process, the film forming process for the large number of solid-state image pickup devices 21 may be performed once. Compared to the case, it is possible to significantly reduce man-hours and costs.

  In the first embodiment, the optical filter layer is partially removed before the glass substrate 24 and the semiconductor substrate 22 that is a semiconductor wafer are bonded to each other. As described above, even if the partial removal of the optical filter layer in the second ′ step (lattice-shaped dicing line D in FIG. 10) is performed after the glass substrate 24 and the semiconductor substrate 22 which is a semiconductor wafer are bonded. Good. Further, in the first embodiment, after the optical filter layer is formed on the glass substrate 24, the glass substrate 24 and the semiconductor substrate 22 which is a semiconductor wafer are bonded, but the glass substrate 24 and the semiconductor wafer are used. After joining the semiconductor substrate 22, when the infrared cut filter substrate 25 and the optical low pass filter substrate 26 are joined on the glass substrate 24, or the film forming process of the infrared cut filter layer 25a and the optical low pass filter layer 26a The optical filter layer may be formed by

  Furthermore, when a plurality of optical filter substrates and optical filter layers are formed on the glass substrate 24 that covers the solid-state imaging device 21, a bonding process and a film forming process may be combined.

  In the bonding process between the glass substrate 24 and the semiconductor substrate 22 as the semiconductor wafer in the fourth step of the first embodiment, a lattice-shaped dicing line D (a part of the optical filter layer is removed in FIG. 10A). When the alignment of four vertical and horizontal square alignment marks A as shown in FIG. 10B provided on the semiconductor substrate 22 side is performed on the basis of the (part)), the alignment of the four vertical and horizontal square alignment marks A is performed. An image taken by an infrared camera is enlarged on the display screen so that a cross-shaped dicing line D is located between the glass substrate 24 and the semiconductor substrate 22 in an XY direction and a rotation direction while confirming the position. However, the present invention is not limited to this, and the semiconductor underneath is removed with reference to the removal region H of the square or rectangular optical filter layer in FIG. When aligning four vertical and horizontal square alignment marks A as shown in FIG. 11B provided on the substrate 22 side, the outer periphery of the four vertical and horizontal square alignment marks A is removed from the optical filter layer. Even if the position of both the glass substrate 24 and the semiconductor substrate 22 is adjusted in the XY direction and the rotational direction while enlarging the image photographed by the infrared camera on the display screen and confirming the position so as to be included in H. Good. Further, the vertical and horizontal 4 as shown in FIG. 12B provided on the semiconductor substrate 22 side with reference to the removal region H of the square or rectangular optical filter layer in FIG. When aligning the square alignment marks A, the outer periphery of the four vertical and horizontal square alignment marks A is included in the removal region H of the optical filter substrate, and between the four vertical and horizontal square alignment marks A. The positions of both the glass substrate 24 and the semiconductor substrate 22 in the XY direction and the rotational direction are confirmed while enlarging the image taken by the infrared camera on the display screen so that the end of the dicing line D is positioned on the display screen. Adjustments may be made. In this case, as shown in FIG. 12C, the outer shape in which the apexes of the four right triangles face each other may be a rhombus as the alignment mark A ′. At this time, with reference to the removal region H ′ of the diamond-shaped optical filter layer and the end of the dicing line D, the four outer shapes shown in FIG. 12C provided on the semiconductor substrate 22 side are used. When aligning the right triangle alignment mark A ′, the outer periphery of the four right triangle alignment marks A ′ is included in the removal region H ′ of the optical filter layer, and the four right triangle alignment marks A ′ While adjusting the position of the glass substrate 24 and the semiconductor substrate 22 in the XY direction and the rotation direction while enlarging them by a camera and displaying them on the display unit so that the end of the dicing line D is positioned between them, Also good.

  In the above case, the electronic element is an image pickup element having a plurality of light receiving units that photoelectrically convert image light from a subject to pick up an image. However, the present invention is not limited to this, and the electronic element is used to generate emitted light. A light emitting element and a light receiving element for receiving incident light may be used.

  As an example of an electronic element module in which an optical element is further joined on the sensor module 2 or 2A as the electronic element module of the first exemplary embodiment, a plurality of light receiving units that photoelectrically convert image light from a subject and image it An example of a sensor module in which an imaging device having a light source and one or a plurality of lens modules (optical elements) for imaging incident light on the imaging device will be described in detail with reference to FIG. .

(Embodiment 2)
FIG. 13 is a longitudinal cross-sectional view illustrating an exemplary configuration of a main part of a sensor module according to Embodiment 2 of the present invention.

  In FIG. 13, the sensor module 50 according to the second embodiment is provided with an imaging element 51 a as an electronic element including a plurality of light receiving units that are photoelectric conversion units (photodiodes) corresponding to a plurality of pixels on the chip surface. A through-wafer 51 (corresponding to each chip separated from the electronic element wafer module) provided between the front and back surfaces as a through-hole 51b as a through-electrode), and an imaging device 51a of the through-wafer 51 A resin adhesive layer 52 (corresponding to the spacer 23 in FIG. 1) formed on the periphery of the substrate, and a cover in which the resin adhesive layer 52 is covered and an infrared cut filter substrate 532 and an optical low-pass filter substrate 533 are bonded to the surface. A glass plate 531 separated as glass (corresponding to the glass substrate 24 as the transparent support substrate in FIG. 1), and the glass plate 531 A lens plate 54 (provided on a laminated structure of an infrared cut filter substrate 532 and an optical low-pass filter substrate 533) and a plurality of lens plates 541 to 543 as optical elements for condensing incident light on the image sensor 51a. Lens module), lens adhesive layers 551 and 552 for adhering and fixing these lens plates 541 to 543, and a central portion of the uppermost lens plate 541 among the lens plates 541 to 543 in a circular light. While having an opening as an intake port, it has a light shielding member 56 that shields other surface portions and side portions such as the lens plates 541 to 543 and the glass plate 531, and the glass plate 531 is formed on the through wafer 51. And the lens plate 54 are aligned with each other in this order, and the resin adhesive layer 52 and the lens adhesive layer 551 and They are bonded to each other up and down by such 552. In short, the sensor module 50 as the electronic element module of the second embodiment has a plurality of lens plates 541 to 543 bonded to the electronic element wafer module of the first embodiment with lens adhesive layers 551 and 552, and the like. A new electronic element wafer module is obtained, and the light shielding member 56 is mounted on the individual wafer module from above. Thereby, the sensor module 50 of the second embodiment is manufactured.

  The lens plate 54 is a lens plate made of transparent resin or transparent glass. The lens plate 54 is composed of a lens region having a lens function and a peripheral lens frame portion as a spacer portion having a spacer function, and the whole is formed of the same kind of glass or resin material. Thereby, the lens plates 541 to 543 having a predetermined lens shape and a predetermined lens thickness can be formed.

  The second embodiment has a structure in which three formed lens plates 541 to 543 are bonded together at the lens edge portion. Adhesive members 551 and 552 are used for the bonding, but the adhesive members 551 and 552 may have a light shielding function.

  The plurality of lens plates 54 as optical elements are an aberration correction lens 543, a diffusion lens 542, and a condensing lens 541 (a condensing lens in the case of a single lens), and the lens plate 54 is provided with a lens region in the central portion. A lens collar portion as a peripheral portion, which is a spacer portion having a predetermined thickness, is provided on the outer peripheral side of the lens region. The predetermined thickness provided on each outer peripheral side of the lens plate 54 is provided. The spacers having the positions are stacked in this order from the bottom. The spacer portion has a positioning function, and the positioning function is constituted by a tapered concave portion and a convex portion or alignment marks A and A ′. The adhesive layers 551 and / or 552 that adhere the three lens plates 541 to 543 may also serve as a light shielding function, and the adhesive layers 551 and 552 may contain a solid that determines a space.

Next, a finished product using the sensor module 50 as the electronic element module is referred to as Embodiment 3, and either the sensor module 2 or 2A of Embodiment 1 or the sensor module 50 of Embodiment 2 is used for the imaging unit. The electronic information apparatus will be described in detail with reference to the drawings.
(Embodiment 3)
FIG. 14 shows a schematic configuration of an electronic information device using, as an imaging unit, any one of the sensor module 2 or 2A of the first embodiment of the present invention and the sensor module 50 of the second embodiment of the present invention as the third embodiment of the present invention. It is a block diagram which shows an example.

  In FIG. 14, the electronic information device 90 according to the third embodiment performs color signal processing on the image pickup signal from either the sensor module 2 or 2 </ b> A according to the first embodiment or the sensor module 50 according to the second embodiment. A solid-state imaging device 91 that obtains a signal, a memory unit 92 such as a recording medium that enables data recording after a predetermined signal processing is performed on the color image signal from the solid-state imaging device 91, and the solid-state imaging device 91 Display means 93 such as a liquid crystal display device that can display a color image signal on a display screen such as a liquid crystal display screen after predetermined signal processing for display, and the color image signal from the solid-state imaging device 91 for communication. And communication means 94 such as a transmission / reception device that enables communication processing after predetermined signal processing. The electronic information device 90 is not limited to this, but in addition to the solid-state imaging device 91, at least one of a memory unit 92, a display unit 93, a communication unit 94, and an image output unit 95 such as a printer. You may have.

  As described above, the electronic information device 90 includes, for example, a digital camera such as a digital video camera and a digital still camera, an in-vehicle camera such as a surveillance camera, a door phone camera, and an in-vehicle rear surveillance camera, and a video phone camera. An electronic device having an image input device such as an image input camera, a scanner, a facsimile, a camera-equipped mobile phone device and a personal digital assistant (PDA) is conceivable.

  Therefore, according to the third embodiment, based on the color image signal from the solid-state imaging device 91, it is displayed on the display screen, or is printed out on the paper by the image output device 95. (Printing), communicating this as communication data in a wired or wireless manner, performing a predetermined data compression process in the memory unit 92 and storing it in a good manner, or performing various data processings satisfactorily Can do.

  Note that the electronic information device 90 is not limited to the electronic information device 90 of the third embodiment, and may be an electronic information device such as a pickup device using the electronic element module of the present invention for an information recording / reproducing unit. As an optical element of the pickup device in this case, an optical functional element (wafer-like optical device; for example, prism module and hologram element module, that is, a hologram) that emits the emitted light straightly and emits it, and bends the incident light in a predetermined direction. Optical element and prism optical element). Further, the electronic elements of the pickup device include a light emitting element (for example, a semiconductor laser element or a laser chip) for generating emitted light and a light receiving element (for example, a photo IC) for receiving incident light.

  As mentioned above, although this invention has been illustrated using preferable Embodiment 1-3 of this invention, this invention should not be limited and limited to this Embodiment 1-3. It is understood that the scope of the present invention should be construed only by the claims. It is understood that those skilled in the art can implement an equivalent range based on the description of the present invention and the common general technical knowledge from the description of specific preferred embodiments 1 to 3 of the present invention. Patents, patent applications, and documents cited herein should be incorporated by reference in their entirety, as if the contents themselves were specifically described herein. Understood.

  The present invention relates to an electronic element wafer module in which an optical filter layer is provided on a cover glass that protects a plurality of electronic elements, a method for manufacturing the electronic element wafer module, and the electronic element wafer module separated into individual electronic elements. Electronic element module, electronic element module on which an optical element is further joined, digital camera such as a digital video camera and digital still camera using these electronic element modules as an image input device in an imaging unit, and an image input camera In the field of electronic information equipment such as a scanner device, a facsimile device, and a camera-equipped mobile phone device, the optical filter is partially or completely removed along the dicing line D, so that the semiconductor of the semiconductor wafer below the optical filter The board can be confirmed more clearly, Overlay detection of the semiconductor substrate and the transparent supporting substrate as a conductor wafer (alignment) can be performed easily and accurately.

It is a principal part longitudinal cross-sectional view which shows the structural example of a camera module at the time of applying the electronic element module which concerns on Embodiment 1 of this invention to a camera module. It is an external appearance perspective view which shows the structural example of the sensor module of FIG. It is a principal part longitudinal cross-sectional view which shows the structural example of the sensor module of FIG. It is a flowchart which shows the manufacturing process of the sensor module of FIG. (A)-(f) is process sectional drawing which shows the manufacturing process of the sensor module of FIG. It is a board | substrate perspective view for demonstrating the board | substrate joining process of FIG.5 (d). It is sectional drawing which shows the laminated structure by which the infrared cut filter layer and the optical low-pass filter layer were laminated | stacked on the cover glass. It is a longitudinal cross-sectional view of the sensor module using the laminated structure of FIG. It is a flowchart which shows the modification of the flowchart of FIG. (A) And (b) is a top view of the optical filter for demonstrating the relationship between the dicing line D and the alignment mark. (A) And (b) is a top view of the optical filter for demonstrating the relationship between the removal area | region H of an optical filter layer, and an alignment mark. (A)-(c) is a top view of the optical filter for demonstrating the relationship between the dicing line D and the removal area | region H of an optical filter layer, and an alignment mark. It is a longitudinal cross-sectional view which shows the principal part structural example of the sensor module which concerns on Embodiment 2 of this invention. It is a block diagram which shows the schematic structural example of the electronic information apparatus which used the sensor module of Embodiment 1 or 2 of this invention for the imaging part as Embodiment 3 of this invention. FIG. 11 is a longitudinal sectional view of a main part schematically showing an example of a conventional camera module using a ceramic package type solid-state imaging device disclosed in Patent Document 3;

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Camera module 2,2A Sensor module 3 Mounting board 4 Optical unit 21 Solid-state image sensor 22 Semiconductor substrate (semiconductor wafer)
23 Spacer 24, 24A, 24B Cover glass (glass substrate; transparent support substrate)
25, 25A, 25B Infrared cut filter substrate 25a Infrared cut filter layer 26, 26A, 26B Optical low pass filter substrate 26a Optical low pass filter layer 27 Opening 28 External connection terminal A, A 'Alignment mark D Dicing line Da Center line H Optical filter Layer removal region 50 Sensor module 51 Penetration wafer 51a Imaging element (electronic element)
51b Through hole (through electrode)
52 resin adhesive layer 531 glass plate 532 infrared cut filter substrate 533 optical low-pass filter substrate 54, 541-543 lens plate 551, 552 lens adhesive layer 56 light shielding member 90 electronic information device 91 solid-state imaging device 92 memory unit 93 display means 94 communication means 95 Image output means

Claims (25)

  A transparent support substrate that covers and protects each of the plurality of electronic elements is bonded to the electronic element wafer on which the plurality of electronic elements are formed. At least one surface of the transparent support substrate corresponds to the electronic element. An optical element wafer module in which an optical filter is formed, and a part or all of the optical filter is removed along a dicing line for dividing the optical filter into a plurality of electronic element modules.   The electronic element wafer module according to claim 1, wherein the optical filter is formed in at least one of a plate shape, a sheet shape, a film shape, and a layer shape bonded onto the transparent support substrate.   The electronic element wafer module according to claim 1, wherein the optical filter is formed on the transparent support substrate.   The electronic element wafer module according to claim 1, wherein the optical filter is at least one of an infrared cut filter and an optical low-pass filter.   The electronic element wafer module according to claim 4, wherein an antireflection filter is further formed as the optical filter.   The electronic element wafer module according to claim 1, wherein the optical filter is removed in a lattice shape along the dicing line.   The electronic element wafer module according to claim 6, wherein at least two alignment marks are arranged on the electronic element wafer side, and the alignment marks are arranged so as to be aligned with the lattice-shaped dicing lines.   2. The electronic element wafer module according to claim 1, wherein the optical filter is removed in a shape area that can be aligned with an alignment mark on the electronic element wafer side when the electronic element wafer and the transparent support substrate are bonded. 3.   The optical filter is removed in a shape area that can be aligned with the alignment mark on the electronic element wafer side when the electronic element wafer and the transparent support substrate are bonded, and is removed in a lattice shape along the dicing line. The electronic element wafer module according to claim 1, wherein the alignment mark is arranged to be aligned with the dicing line.   The electronic element wafer module according to claim 8, wherein the shape region is a square, a rectangle, or a rhombus.   An optical filter forming step for forming an optical filter on at least one surface of the transparent support substrate, and an optical filter for removing a part or all of the lines along a dicing line for separating into a plurality of electronic element modules from the optical filter A method of manufacturing an electronic element wafer module, comprising: a partial removal process; and a substrate bonding process for bonding the semiconductor wafer on which the plurality of electronic elements are formed and the transparent support substrate.   The electronic element wafer according to claim 11, wherein the optical filter forming step includes a step of bonding or forming a film of at least one of a plate shape, a sheet shape, a film shape, and a layer shape on the transparent support substrate. Module manufacturing method.   The method for manufacturing an electronic element wafer module according to claim 11, wherein the optical filter forming step forms at least one of an infrared cut filter and an optical low-pass filter as the optical filter.   The method of manufacturing an electronic element wafer module according to claim 11, wherein in the optical filter partial removal step, the optical filter is removed in a lattice shape along the dicing line.   An alignment mark is arranged on the electronic element wafer side so as to be aligned with respect to the lattice-shaped dicing line, and the substrate bonding step is performed using the lattice-shaped dicing line and the alignment mark. The method of manufacturing an electronic element wafer module according to claim 14, wherein the semiconductor wafer and the transparent support substrate are bonded together.   12. The optical filter partial removal step of removing the optical filter in a shape area that can be aligned with an alignment mark arranged on the electronic element wafer side when the electronic element wafer and the transparent support substrate are bonded. The manufacturing method of the electronic element wafer module of description.   The optical filter partial removal step includes removing the optical filter in a shape region that can be aligned with an alignment mark on the electronic element wafer side and joining the electronic element wafer and the transparent support substrate along the dicing line. The method of manufacturing an electronic element wafer module according to claim 11, wherein the optical filter is removed in a grid pattern.   It separated into pieces from the electronic element wafer module in any one of Claims 1-10 by cutting the said semiconductor wafer and the said transparent support substrate along the centerline of the said dicing line for every said electronic element. Electronic element module.   An electronic element module comprising: the electronic element module according to claim 18; and an optical system disposed on the electronic element of the electronic element module or an optical unit in which the optical system is incorporated.   The electronic device module according to claim 18, wherein the electronic device is an image pickup device having a plurality of light receiving units that perform image conversion by photoelectrically converting image light from a subject.   The electronic device module according to claim 18 or 19, wherein the electronic device has a light emitting device for generating outgoing light and a light receiving device for receiving incident light.   The electronic device module according to claim 19, wherein the optical system is a lens module, and the electronic device is an imaging device.   The electronic element module according to claim 19, wherein the optical system is one of a prism module and a hologram element module, and the electronic element is a light emitting element and a light receiving element.   An electronic information device using the electronic element module according to claim 20 as a sensor module in an imaging unit.   An electronic information device using the electronic element module according to claim 21 in an information recording / reproducing unit.