JP2009284295A - Low-impedance loss line component - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To achieve a function of an ideal power supply that has an extremely low impedance value and an extremely small transmission coefficient value up to a band exceeding 1 GHz and cannot be achieved by a capacitor. <P>SOLUTION: One portion of a lead frame is connected to an edge in a width direction of a second cathode layer in a low-impedance loss line and the entire center section of a first cathode layer each, the low-impedance loss line and one portion of the lead frame are sealed with a packaging resin 36, the lead frame is cut with an edge section left, and the edge section exposed from the packaging resin 36 is bent to form a power terminal 35 and a ground terminal 34, thus forming a low-impedance loss line component 37. The low-impedance loss line component 37 is mounted on a printed circuit board 38, the power terminal 35 is inserted into power supply wiring 40 in series via a via 41, and the ground terminal 34 is connected to a ground plane 39 in parallel via the via 41. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

The present invention relates to a circuit or a circuit component, and in particular, is used for a power converter such as a high-frequency DC-DC converter and a DC power distribution circuit of an information technology apparatus and a digital data communication device using a high-speed switching element. The present invention relates to a low-impedance loss line component that can be improved and can improve conversion efficiency, signal quality (signal integrity), and electromagnetic compatibility (EMC).

In recent years, transistors have been increased in speed in order to achieve higher performance and higher functionality of information technology devices and multimedia devices. Information technology devices, multimedia devices, and power converters are also strongly demanded to save energy and reduce size and weight.

However, there is a problem that high-level electromagnetic noise is generated in circuits and devices that use high-speed switching elements. In circuit design technology that uses conventional components such as capacitors, EMC countermeasure components and shielding materials are used. However, it was difficult to improve signal integrity and EMC, and it was difficult to meet the demands for energy saving and miniaturization.

It is physics that dominates the theory of circuit design technology, and more directly, electromagnetism. According to electromagnetism, circuit states can be considered as active states (exited states), steady states (stationary states), and quasi-steady states (quasi-stationary states that can be regarded as steady states in practice)
There are stationary states. The active state is a state in which the electric field and magnetic field on the circuit are changing or oscillating, and an AC circuit is one example. The oscillating electric and magnetic fields travel as electromagnetic waves in the insulator. When the insulator is a vacuum space, the electromagnetic wave travels at the speed of light.

The steady state is a state where the electric field and magnetic field on the circuit are stationary, and a DC circuit is an example. The quasi-steady state means that an electric field and a magnetic field travel on the circuit as an electromagnetic wave, but the wavelength of the electromagnetic wave is very long compared to the circuit length, and even if the behavior of the electromagnetic wave in the circuit is regarded as only strong and weak vibration, it is practical. This is a state where no inconvenience occurs. When a low-frequency analog circuit or a switching element having a rise time of about 1 [ns] or more is used in a circuit having a wiring of 10 [cm] or more, this is an example that can be regarded as a quasi-stationary state.

According to electromagnetics, the current in a circuit in an active state is defined as Ampere's law and is given by

According to electromagnetism, the electric potential V is defined as an integral value of an electric field from an infinite point where the electric field does not reach to one point of the conductor, but practically as an integral value of the electric field from the ground plane to one point of the conductor, E is obtained from the following equation as the slope of the potential V.

Maxwell published Maxwell's equation, which merged the theory of magnetic fields and the theory of electric fields, in 1873, and then transformed this equation into the form of D'Alembert's wave equation to derive the vector wave equation. Maxwell, who had been insisting since 1862, theoretically proved that both electromagnetic waves and light propagate at the speed of light using this equation, and completed linear electromagnetic wave theory (hereinafter referred to as electromagnetic wave theory). Was completed. In 1887, Hertz demonstrated the existence of electromagnetic waves by experiment and proved the correctness of Maxwell's electromagnetic wave theory.

According to electromagnetism, an electric field and a magnetic field that change with time interact with each other and propagate in a space or a dielectric as a transverse wave. The speed of the electromagnetic wave propagating in the vacuum is the speed of light. The propagating electromagnetic wave propagates power according to the pointing vector theory. An electromagnetic wave propagating in space is composed of an electric field wave and a magnetic field wave whose period and polarity coincide and whose amplitude vector is orthogonal to the traveling direction. The electromagnetic wave in this state is called a TEM (transverse electromagnetic) wave. The value obtained by dividing the amplitude of the electric field wave constituting the TEM wave by the amplitude of the magnetic field wave is the wave impedance (surge
impedance or wave impedance).

According to electromagnetism, electromagnetic waves travel not only in space but also in media. The speed of the electromagnetic wave traveling through the lossless dielectric is slowed by the square root of the relative permittivity with respect to the speed of light, and the wavelength is shortened by the square root of the relative permittivity. The latter is called wavelength compression.

According to electromagnetism, an electromagnetic wave traveling in a lossy medium follows an attenuation constant γ expressed by the following equation, and the amplitude decreases and the phase changes with progress. α which is a real term of γ is called an attenuation constant, and β which is an imaginary term of γ is called a phase constant. α is expressed in units of nep / m (neper / meter). 1
[nep / m] means that the amplitude is attenuated by exp-1 or 0.368 times after proceeding 1 meter.

According to electromagnetics, the parenthesis term in the following equation obtained by transforming γ 2 in equation (3) is defined as the complex permittivity for a lossy dielectric, and the imaginary part (σ / ε0ω) is the real part. The value divided by (εr) is called the dielectric loss tangent and is represented by tan δ. However, tan δ has no deep meaning in electromagnetics.

When the electromagnetic wave travels in the conductor, there is no electric charge acting on the electromagnetic wave in the conductor, and the electrical conductivity σ is much larger than ωε, so γ is expressed by the following equation. Δ, which is the reciprocal of the attenuation constant α in the following equation, is called the skin thickness.

According to electromagnetism, the specific impedance Z0, which is the ratio of the electric field to the magnetic field of the electromagnetic wave traveling in the conductor, is given by It is done.

In an active state or quasi-stationary state where the electric and magnetic fields on the circuit are changing or oscillating, the electromagnetic wave theory dominates the circuit, and in this case, it is difficult for the electromagnetic wave to travel through the conductor. However, in a steady state where the electric and magnetic fields on the circuit are stationary, the current can move relatively easily through the conductor.

According to physics, there are almost inexhaustible free electrons or charges in the conductor. However, the total charge amount in the conductor is determined depending on the physical properties, and the value is constant in a steady state. When a static load is connected to the direct current power source, a current flows due to the movement of charges in the conductor, but in general, only a small electric field can be applied to the movement axis of charges, so the average movement speed of charges is extremely slow.

For example, when a current of 10 amperes defined by a charge velocity (dq / dt) in a conductor is traveling in a copper wire having a cross section of 1 square millimeter, the current progression rate is calculated according to physics It becomes 0.368 [mm / s] at room temperature. Since the charge in the conductor can move although it is slow, if the same amount of charge is constantly supplied from one end of the conductor when the charge is constantly consumed at the other end of the conductor, Energy supply to a steady load such as a resistor connected to the other end is performed without any trouble.

Telecommunications engineering handles the progression of electrical signals on transmission lines. According to telecommunications engineering, when an electric signal is applied between two DC-insulated conductors, the electric signal becomes a current wave and a voltage wave and travels through the transmission line.

In telecommunications engineering, as in AC circuit theory, the current is the average charge velocity (dq / dt) in the conductor, that is, the conductor current. However, in Maxwell's equations that form the basis of electromagnetism, the conductor current corresponds to a current density J that is not a function of time.

The AC circuit theory and telecommunications engineering define the current as dq / dt for the following reasons. Kirchhoff's law, one of the important laws supporting AC circuit theory, was announced in 1845, Maxwell theoretically proves the existence of electromagnetic waves, and Hertz confirms the existence of electromagnetic waves by experiments42 Years ago. The telegraph equation, one of the important theories supporting telecommunications engineering, was developed in 1874, 13 years before the existence of electromagnetic waves was confirmed. Therefore, at the time when AC circuit theory and telecommunications engineering were put into practical use, there was no idea that the action of the circuit was the action of electromagnetic waves. Furthermore, the theory was not revised after that.

In the telegraph equation that forms the basis of telecommunications engineering, the basis of the fact that the conductor current can flow at the speed of light is the D'Alembert wave equation. In D'Alembert's wave equation, the subject of the wave is expressed by a vector function with a Laplacian of scalar quantity and is not specified. The fact that the conductor current becomes a wave with the voltage between conductors is consistent with the electromagnetism governing the electrical circuit, so the telegraph equation obtained by comparing the circuit equation for voltage and current with the D'Alembert wave equation is the electromagnetism Is irrelevant and is contrary to electromagnetism.

If the definition of current is contrary to electromagnetism, the idea of contradicting electromagnetism also arises in relation to line voltage, impedance, electromagnetic waves, and transmission loss. Although this contradiction is seen in telecommunications engineering, it has a long history and has abundant track record of application to transmission line design. Therefore, conventional transmission line design for continuous wave is inconsistent with electromagnetics. Has not been revealed.

In transmission line design for intermittent waves such as switching waves or digital waves, the idea of being efficient based on telecommunications engineering is dominant. However, since there is little practical experience with digital circuits in telecommunications engineering, the contradiction with electromagnetism may become apparent unless careful design and analysis is performed in contrast to electromagnetism.

According to electromagnetics, when the insulator sandwiched between the two conductors constituting the transmission line is in a vacuum, the electromagnetic wave of the TEM wave travels in the vacuum at the speed of light. In other words, the current and voltage in this case travel through the insulator, not the conductor of the transmission line, and have values obtained from the equations (1) and (2), respectively. Since an actual current or voltage is a magnetic field or an electric field, it can travel in a quasi-light speed as a wave in the insulator. A value obtained by dividing the amplitude of the electric field wave constituting the TEM wave on the transmission line by the amplitude of the magnetic field wave is the characteristic impedance.

According to telecommunications engineering, the behavior of a signal traveling on a transmission line is determined by the characteristic impedance and propagation constant of the transmission line. The characteristic impedance Z0 of the parallel plate line in which the ideal flat conductors face each other across the ideal insulator is obtained from the following equation according to the physical constant of the transmission line. The material characteristics of the flat conductor and the insulator do not have a large practical effect on the characteristic impedance of the transmission line.

According to telecommunications engineering, when electromagnetic waves are injected into a transmission line having an unknown characteristic impedance (Z1) through a transmission line having a known characteristic impedance (Z0),
The reflection coefficient (S11) at the connection point of the two transmission lines is expressed by the following equation.

According to telecommunications engineering, the transmission coefficient (S21α) of a transmission line having a loss, that is, a lossy line is expressed by the following equation.

According to electromagnetics, the practical transmission line attenuation constant is determined by the attenuation when the electromagnetic wave travels through a lossy dielectric body, and part of the electromagnetic wave penetrates into the conductor in the course of the electromagnetic wave traveling through the dielectric. It can be considered that this is the sum of the conductor loss and the radiation loss leaking out of the transmission line.

Wiring design of high-speed digital data communication equipment is performed according to telecommunication engineering. However, telecommunications engineering is suitable for transmission line design that handles continuous waves such as sine waves, but as mentioned above, transmission line design that handles intermittent waves such as digital signals is not suitable because of inconsistencies with electromagnetics. .

DC power supplies used in information technology equipment, high-speed digital data communication equipment, and the like are considered to supply electric charges to circuits.

According to electromagnetism, Maxwell modified Coulomb's law, assuming that the force acting on the unit (test) point charge is due to the electric field where the unit point charge exists. This fact is not well known.

According to the modified electromagnetism, the electrostatic energy wE related to the electric field is expressed by the following equation.

Thus, the electrostatic energy (wE) is not carried by the electric charge but is accumulated in the medium as the product of the electric field E and the electric flux density D or the electric field E.

The electrostatic energy wC stored in the capacitor having the capacitance C to which the voltage V is applied is expressed by the following equation, where d is the electrode distance and S is the electrode area.

For measuring the impedance characteristics of capacitors in a band of several megahertz or more, a network analyzer or a four-terminal impedance analyzer applying the principle of the network analyzer is used. In digital circuits that support IT equipment, capacitors are overwhelmingly often used as decoupling capacitors for power distribution circuits. Capacitors as DUTs (device under test) are connected in parallel to measurement lines. Measured.

The terminal impedance (ZC) of the capacitor by the measurement method can be obtained from the transmission coefficient (S21) constituting the scattering matrix according to the following equation.

When the characteristic impedance (Z0) of the measurement system cable is 50 [Ω] and S21 is considerably smaller than 1, the relationship between ZC and S21 is further simplified as in the following equation. This method can be used for a lossless line or an element such as a capacitor whose line length can be regarded as zero. However, in the case of a general transmission line, it must be estimated from the measurement result of the reflection coefficient (S11) from the relationship of equation (8). I must.

When the terminal impedance is very small as compared with the characteristic impedance of the measurement system cable as in the case of the capacitor, the error is reduced by obtaining from the equation (12). However, since the expression (12) is an expression that is established when the capacitor is regarded as an element of a lumped element circuit in which the action of electromagnetic waves is ignored, the action of the electromagnetic waves cannot be ignored in a circuit of a general size. Note that it does not hold.

When the impedance characteristic is obtained by substituting the measured value of the transmission coefficient (S21) into the equation (12), a commercially available capacitor is said to have a frequency at which the impedance called a resonance point is minimized. In the frequency band below the resonance point, it shows an almost ideal impedance characteristic in which the impedance value decreases in proportion to the frequency, but it is confirmed that it shows a reactance characteristic in which the impedance increases in proportion to the frequency above the resonance frequency. . The reason for this is thought to be that a capacitor has lead wires, terminals, and electrodes, and this portion acts as an equivalent series inductance (ESL). Furthermore, the impedance at the resonance point is considered to be determined by the equivalent series resistance (ESR).

Examining the resonance point of the impedance characteristic obtained from Equation (12) according to electromagnetics, the resonance point is the upper limit at which the capacitor can be regarded as a lumped element model, and the characteristic above the resonance point is the physical arrangement of the capacitor and the measurement circuit. It can be seen that the characteristic shows the behavior of the electromagnetic wave related to the size.

In the design and analysis of electric and electronic circuits, the power source is treated as an ideal power source having zero terminal impedance and transmission coefficient in the frequency band handled by the electric and electronic circuit. However, since an actual power source is a commercial power source, a battery, or a power converter that uses the action of inductance, it cannot be regarded as an ideal power source. For this reason, a capacitor is used to make an actual power supply an ideal power supply. However, since the capacitor is an element of a lumped element model, as a single capacitor, an operation at about 1 MHz or higher where the action of electromagnetic waves cannot be ignored in a general size circuit is not considered.

In spite of the above, capacitor manufacturers and information technology equipment related manufacturers have devised various ways to use capacitors based on the above-described conventional concept. The power supply layer and the ground layer of the printed wiring board employ a parallel plate structure in order to minimize a DC voltage drop and to realize a low impedance in a band of gigahertz or higher, which is impossible with a capacitor. However, when mounting hundreds or more capacitors on a board, the method of determining the optimal capacitance value, size, and optimal placement of individual capacitors is so complex that it is impossible even with a high-performance computer. There is not established even now.

Capacitor manufacturers are working to improve capacitors themselves to reduce ESL and ESR. However, in electrolytic capacitors, the focus is on higher capacity and lower ESR, and in ceramic capacitors, focus is on miniaturization and slightly higher ESR, leading to improvements that take electromagnetic behavior into consideration. Not in.

According to the isolated electromagnetic wave concept shown in Non-Patent Document 1 and Non-Patent Document 2, the switching element excites an isolated electromagnetic wave, which is a kind of nonlinear wave or soliton, at the moment of switching. A switching element of a general switching device excites a solitary electromagnetic wave, which is a kind of nonlinear wave or soliton, at the moment of switching by the same mechanism.

The excitation mechanism of isolated electromagnetic waves during the switching operation of the switching element is caused by suddenly opening a gate for storing water in various experiments conducted by John Scott Russell in 1834 when he discovered solitons. It is very similar to the generation mechanism of solitons and the tsunami generation process that has been confirmed to be a kind of solitons.

According to the isolated electromagnetic wave concept shown in Non-Patent Document 1 and Non-Patent Document 2, at the moment when the switching element switches from off to on, the potential at the point where the switching element connects the power line and the signal line is The voltage is a value obtained by dividing the characteristic impedance of the power line and the signal line. Therefore, isolated electromagnetic waves with a polarity that lowers the voltage to the divided voltage are excited on the power line, and isolated electromagnetic waves with a polarity that raises the voltage to the divided voltage are excited simultaneously on the signal line, and the isolated amplitude vectors are orthogonal to each other according to the electromagnetic wave theory. It travels on the transmission line with electric field waves and solitary magnetic field waves.

FIG. 1 is an example of an equivalent circuit related to an inverter or push-pull circuit (hereinafter referred to as push-pull circuit) 1 for explaining the behavior of isolated electromagnetic waves. In FIG. 1, a push-pull circuit 1 is connected in the middle of a transmission line having a characteristic impedance Z0, and a power supply line 5 having a characteristic impedance Z0 is connected between the DC power supply 4 and the push-pull circuit 1 to form a power supply line. The signal line 6 having the characteristic impedance Z0 is connected between the push-pull circuit 1 and the matching termination resistor 7 to constitute a signal line. Push-pull circuit 1 is a P-channel MOS
It consists of FET2 and N-channel MOS FET3.

In FIG. 1, the on state of the push-pull circuit 1 is a state where the P-channel MOS FET 2 is on and the N-channel MOS FET 3 is off, and the push-pull circuit 1 is off. The relationship between the magnetic field and the current and the relationship between the electric field and the potential with respect to the TEM wave traveling through the transmission line are shown as the amperage law and the definition of the potential in electromagnetics, respectively.

FIG. 2 shows a potential waveform 9 on the signal line 6 when the push-pull circuit 1 changes from off to on, and an electric field waveform 8 that travels on the signal line 6 obtained by calculating backward from the definition of the potential shown in electromagnetics. It shows. FIG. 3 shows a potential waveform 11 on the power supply line 5 when the push-pull circuit 1 changes from off to on, and an electric field waveform 10 that travels on the power supply line 5 obtained by calculating backward from the definition of the potential shown in electromagnetics. It shows.

As shown in FIGS. 2 and 3, the waveform of the electric field generated by the switching of the push-pull circuit 1 is the product of the rise time and the circumference obtained by regarding the tangent of the maximum slope of the rising waveform of the switching element as the rising waveform. It approximates to a half waveform of a sine wave having an effective frequency defined by the frequency obtained as the reciprocal of. To quote the concept of effective frequency, the accuracy of the approximation is expected to be 92% or more. Therefore, practically, it can be performed at an effective frequency as far as design is concerned.

1 to 3, when the push-pull circuit 1 changes from off to on, the potentials at the points B and C in FIG. 1 are equal to E / 2 [V]. The isolated electric field wave 8 traveling on the signal line 6 having opposite polarities and the isolated electric field wave 10 traveling on the power supply line 5 excited by the push-pull circuit 1 travel in opposite directions with the push-pull circuit 1 as the back. . The isolated electric field wave 8 traveling on the signal line 6 proceeds while increasing the potential of the signal line 6 from 0 [V] to E / 2 [V], and disappears by the matching termination resistor 7. On the other hand, the isolated electric field wave 10 traveling on the power line 5 insulates each transmission line toward the DC power source 4 while lowering the potential of the power line 5 from E [V] to E / 2 [V]. It travels through the body at quasi-light speed.

When the DC power supply 4 is an ideal power supply with zero terminal impedance, the isolated electromagnetic wave traveling on the power supply line 5 is reflected by the DC power supply 4 and has the same polarity as the isolated electromagnetic wave excited on the signal line 6. 5 and the potential of the signal line 6 are increased from E / 2 [V] to E [V], and disappear with the matching termination resistor 7.

According to Non-Patent Document 1 and Non-Patent Document 2, the wavelength of an isolated electromagnetic wave traveling on the transmission line is defined by the following equation.

Conventional power supply decoupling circuits or circuit components are described in the following patent documents and non-patent documents. The point will be described later.
JP 2002-260965 (P2002-260965A) JP-A-2005-294449 (P2005-294499A) JP2007-42732 (P2007-42732A) JP 2002-164760 (P2002-164760A) JP-A-2004-048650 (P2004-048650A) Hirokazu Tohya and Noritaka Toya, "A Novel Design Methodology of the On-Chip Power Distribution Network Enhancing the Performance and Suppressing EMI of the SoC", IEEE International Symposium on Circuits and Systems 2007, pp. 889-892, May 2007. Hirokazu Toya, Norio Naoya Toya "New design method of on-chip power distribution circuit that greatly improves SoC performance and EMC", IEICE Technical Report, Vol.107, No.149, EE2007-20, pp .73-78, July 2007.

The first problem to be solved relates to Patent Document 1. Patent Document 1 discloses a detailed manufacturing method for a solid electrolyte layer in order to provide a method for manufacturing a solid electrolytic capacitor capable of obtaining a solid electrolytic capacitor having good characteristics by a simple manufacturing process. However, the purpose of the improvement is to reduce ESR, and it has been impossible to approximate the function of an ideal power source expected for a capacitor by the disclosed technology.

A second problem to be solved relates to Patent Document 2. Patent Document 2 discloses a detailed manufacturing method related to a solid electrolyte layer in order to provide a method for manufacturing a solid electrolytic capacitor capable of improving capacitance and withstand voltage and reducing the size and capacity. However, the purpose of the improvement is to increase the capacitance and withstand voltage and to increase the size and capacity, and it has been impossible to approximate the function of an ideal power source expected for a capacitor by the disclosed technology.

A third problem to be solved relates to Patent Document 3. Patent Document 3 discloses a detailed manufacturing method for a solid electrolyte layer including a separator in order to provide a solid electrolytic capacitor having a large capacity, low ESR, and high reliability. However, the purpose of the improvement is large capacity, low ESR, and high reliability, and it has been impossible to approach the function of an ideal power source expected for a capacitor by the disclosed technology.

A fourth problem to be solved relates to Patent Document 4. Patent Document 4 shows a method of forming a distributed constant noise filter used in a band between 10 KHz and 1 GHz. The length of the distributed constant type noise filter is set so as to be at least a quarter wavelength of a high frequency generated from an electronic component. For example, a harmonic of 100 [MHz], that is, a quarter of a sine wave is used. The wavelength is 75 [cm] in the atmosphere, and in the case of aluminum oxide used as an insulator in this document, the relative dielectric constant is about 8.5, so it is 26 [cm]. Too long to use. Further, the input impedance characteristic of the line has a theoretical error in determining where the transmission coefficient (S21) should be obtained from the measured value of the reflection coefficient (S11) or the equivalent electromagnetic field simulation value. No. Therefore, it has been impossible to approximate the function of an ideal power source expected for a capacitor by the disclosed technique.

The fifth problem to be solved relates to Patent Document 5. Patent Document 7 shows the structure of an electrode in detail in order to provide a parallel plate line type element suitable for higher speed and higher frequency, but shows a physical constant of a material used and a manufacturing method related to a solid electrolyte layer. It has not been. Therefore, there is no support for the expected transmission coefficient (S21) characteristics. With the disclosed technology, it has been impossible to approximate the function of an ideal power source expected for a capacitor.

In analog circuits, changes in the circuit state are relatively gradual and the beginning and end are often unclear. Analog circuits have a long history, and especially in engineering, there are almost no problems in practical use in circuit design according to conventional AC circuit theory or telecommunications engineering without having to return to electromagnetism by applying rules of thumb, etc. It was.

On the other hand, unlike the case of the analog circuit, the beginning and end of the state change in the switching circuit are clear. Changes in the state of the switching circuit are very rapid, and sudden changes in electric or magnetic fields naturally excite large levels of electromagnetic waves. The change in the electric or magnetic field in the switching circuit is intermittent. Furthermore, in a data processing circuit that occupies about 90% of a semiconductor integrated circuit, the switching cycle is generally indefinite.

As described above, the analog circuit and the switching circuit are greatly different from the viewpoint of electromagnetics. However, in conventional telecommunications engineering and AC circuit theory, the design of a circuit that assumes intermittent circuit operation, that is, a pulse circuit, is performed by the above-mentioned method that has nothing to do with electromagnetics, and the analysis is performed using a switching wave. The Fourier transform method has been applied, which is considered as a kind of distorted wave.

According to the Fourier transform method, the distorted wave is composed of a number of harmonics that are sine waves. These harmonics are numerous sine waves with no beginning and no end. If the signal on the circuit is analyzed for each harmonic and the results are added, the switching circuit can be analyzed. However, the Fourier transform method is a mathematical method, and it is not used in the design and analysis of electrical and electronic circuits after confirming the consistency with the higher theory of electromagnetism. The analysis of instantaneous phenomena is impossible because of the large deviation from reality.

For example, when a switching wave having a duty of 1/10 and a repetition frequency of 1 [GHz] is Fourier transformed, it can be decomposed into a DC component having a value of 1/10 of the amplitude and a harmonic having 1 [GHz] as a fundamental wave. If a certain length of wiring or transmission line in a semiconductor integrated circuit using a CMOS circuit that hardly passes direct current has a loss that reduces the amplitude of 1 [GHz] to 1/2, The amplitude of the switching wave at the end of the transmission line is reduced to almost ½ or less in the analysis result.

However, according to electromagnetics, the amplitude of the switching wave is maintained by electrostatic energy supplied from a DC power source. Since electrostatic energy is not a wave, it is not affected by the loss of wiring or transmission lines. Therefore, the amplitude of the switching wave observed at the end of the transmission line should not be attenuated.

The same phenomenon applies to electromagnetic waves traveling on the power supply line. The electromagnetic wave traveling on the power line is not intended at all by the designer of the digital circuit, and the action of the electromagnetic wave on the power line is not preferable. If a switching element or an element having the function of an ideal power supply is connected in the vicinity of a switching element or a circuit incorporating a switching element on a power supply line of a circuit system including a switching element or a circuit incorporating the switching element, the switching power supply The electromagnetic wave excited by the signal does not leak onto the power line of the circuit system, and the signal integrity is not deteriorated.

However, devices such as conventional capacitors that are expected to have this function not only follow the isolated electromagnetic wave concept shown in Non-Patent Document 1 and Non-Patent Document 2, but also follow the electromagnetic wave theory established by Maxwell. Therefore, it was impossible to fulfill the function of an ideal power source.

An object of the present invention is to provide means for fundamentally solving the above problems.

In order to solve the above-mentioned problem, the invention according to claim 1 relates to a low impedance loss line component, and comprises an anode made of a valve metal and having an etched portion formed on both surfaces and a dielectric oxide film formed on the surface of the etched portion. A first solid electrolyte layer and a second solid electrolyte layer comprising a foil and a conductive polymer obtained by polymerizing a monomer or a monomer solution formed on the dielectric oxide films on both surfaces of the anode foil with an oxidizing agent; A first conductive carbon paste layer and a second conductive carbon paste layer formed on the surfaces of the first solid electrolyte layer and the second solid electrolyte layer; the first conductive carbon paste layer; Low impedance loss formed from a first cathode layer and a second cathode layer made of a conductive metal powder paste formed on the surface of the second conductive carbon paste layer In the line, power terminals are attached to both ends in the length direction of the first cathode layer, and ground terminals are attached slightly inside both ends in the length direction of the second cathode layer, and at least the power terminals and The low-impedance loss line is formed by being sealed with an exterior resin while leaving the ground terminal.

The invention described in claim 2 relates to a low impedance loss line component, wherein the low impedance loss line component distributes a DC power source to a switching element or a switching circuit. Mounted in the vicinity of the switching element or the switching circuit on the power supply line provided in the first power supply line, the first cathode layer is inserted in series with the power supply line constituting the power supply line via the power supply terminal, and the second The cathode layer is connected in parallel to a ground line or a ground plate constituting the power supply line via the ground terminal.

The invention described in claim 3 relates to a low impedance loss line component, wherein in the low impedance loss line component according to claim 1 or 2, the monomer is 3,4-ethylenedioxythiophene or polypyrrole. It is characterized by.

According to a fourth aspect of the present invention, there is provided a low impedance loss line part, wherein the anode foil is etched and formed with a dielectric oxide film. It is characterized in that it is formed by using a portion of a lattice left by perforating a valve metal foil film.

The invention according to claim 5 relates to a low impedance loss line part, wherein the valve metal is aluminum in the low impedance loss line part according to claims 1 to 4.

The invention described in claim 6 relates to a low impedance loss line component. In the low impedance loss line component according to claims 1 to 5, the low impedance loss line in which the solid electrolyte layer has been formed is 60 to It is characterized by being subjected to re-chemical conversion for repairing the dielectric oxide film layer in an atmosphere at a temperature of 90 ° C. and a relative humidity of 20 to 60%.

The invention described in claim 7 relates to a low impedance loss line component, wherein the lead frame is made of the first cathode layer by a conductive metal powder paste. And being adhered to the second cathode layer.

The invention described in claim 8 relates to a low impedance loss line component, wherein in the low impedance loss line component according to any one of claims 1 to 7, a part of the lead frame is made of the conductive metal powder paste. For the power supply terminal, which is bonded to a central region having 60% or less of the width of one cathode layer and is developed in the length direction of the first cathode layer at an end portion in the length direction of the first cathode layer It is characterized by having protrusions.

The invention described in claim 9 relates to a circuit or a low impedance loss line component. In the low impedance loss line component according to any one of claims 1 to 8, a part of the lead frame is made of a conductive metal powder paste. The power supply terminal which is bonded to a central region having 60% or less of the width of the first cathode layer and is developed in the width direction of the first cathode layer at an end portion in the length direction of the first cathode layer It is characterized by having a projection for use.

The invention described in claim 10 relates to a circuit or a low impedance loss line component. In the low impedance loss line component according to claims 1 to 9, a part of the lead frame is made of a conductive metal powder paste. Bonded to both end regions in the width direction that do not contact the central region of the second cathode layer, and for the ground terminal developed in the width direction of the second cathode layer inside the projection for the power supply terminal It has a protrusion.

The invention described in claim 11 relates to a circuit or a low-impedance loss line component. In the low-impedance loss line component according to any one of claims 1 to 10, the lead frame is copper, nickel, or an arbitrary element including these. It is characterized by comprising an alloy of

The invention described in claim 12 relates to a circuit or a low impedance loss line component. In the low impedance loss line component according to claims 1 to 11, the conductive metal powder paste is 10 [μm] or less. It is characterized by containing at least one metal particle selected from gold particles, silver particles, copper particles, tin particles, indium particles, palladium particles, nickel particles, and any alloy particles thereof having a long diameter.

The invention described in claim 13 relates to a circuit or a low impedance loss line component. In the low impedance loss line component according to claims 1 to 12, the low impedance loss line already bonded to the lead frame is An end portion of the low impedance loss line is masked with a heat resistant resin.

The invention according to claim 14 relates to a low impedance loss line component, wherein in the low impedance loss line component according to claims 1 to 13, the masking is made of silicon resin, epoxy resin, phenol resin, polyimide resin, It is carried out using one or more heat-resistant resins selected from polyester resins, polyphenylene sulfide resins, polyphenylene sulfone resins, polyether sulfone resins, cyanate ester resins, fluororesins, and mixtures or modified products thereof. It is said.

The invention described in claim 15 relates to a low impedance loss line component. In the low impedance loss line component according to claims 1 to 14, the low impedance loss line is connected to the low impedance loss line of the lead frame. The lead frame is sealed with an exterior resin together with the connecting portion, and the lead frame is cut leaving a terminal portion.

The invention described in claim 16 relates to a low-impedance loss line component. In the low-impedance loss line component according to any one of claims 1 to 15, the power supply terminal and the ground terminal are connected to a terminal portion of the lead frame. 2 is formed on the cathode layer side by bending along the surface of the exterior resin.

The invention described in claim 17 relates to a low impedance loss line component, wherein the exterior resin has a carbodiimide group that acts as a dehydration condensing material. And epoxy resin as main components.

When the present invention based on the isolated electromagnetic wave concept is applied to a printed wiring board or a circuit system, the leakage of electromagnetic waves excited by the switching element is greatly suppressed. EMC) can be greatly improved.

When the present invention based on the isolated electromagnetic wave concept is applied to a printed wiring board or a circuit system, leakage of electromagnetic waves excited by the switching elements is greatly suppressed, so that mixed design of analog circuits and digital circuits is facilitated.

When the present invention based on the isolated electromagnetic wave concept is applied to a printed wiring board or a circuit system, it is used for an information technology device using a high-speed switching element, a digital data communication device, and a direct-current power distribution circuit of a high-frequency DC-DC converter. , Low cost, high conversion efficiency, high signal quality (signal integrity), and high electromagnetic compatibility (EMC).

DESCRIPTION OF EXEMPLARY EMBODIMENTS Hereinafter, the best embodiment according to the invention will be described in detail with reference to the drawings.

(Embodiment 1)
FIG. 4 is an example of a low impedance loss line.
In FIG. 4, the low impedance loss line is constituted by an anode foil 19, dielectric oxide films 18 and 20, solid electrolyte layers 17 and 21, carbon graphite layers 16 and 22, and cathode layers 15 and 23. The end of the low impedance loss line is masked with a heat resistant resin in order to ensure a breakdown voltage and reduce a leakage current.

In FIG. 4, an electrode composed of an anode foil 19, a dielectric oxide film 18, a solid electrolyte layer 17, a carbon graphite layer 16, and a cathode layer 15 made of a conductive metal powder paste, and an anode foil 19, a dielectric oxide film 20, the electrode composed of the solid electrolyte layer 21, the carbon graphite layer 22, and the cathode layer 23 made of a conductive metal powder paste has a rectifying action. Therefore, when a ground line or a ground plate is connected to the anode foil 23 and a power supply line having a positive voltage is connected to the cathode layer 15, the line composed of the anode foil 19 and the cathode layer 23 is a low impedance loss line. When a ground line or a ground plate is connected to the cathode layer 15 and a power supply line having a positive voltage is connected to the cathode layer 23, the line composed of the anode foil 19 and the cathode layer 15 has a low impedance loss. Demonstrate the function of the track.

FIG. 5 is an example of an equivalent circuit of a digital basic circuit using a low impedance loss line.

In FIG. 5, an equivalent circuit of a digital basic circuit using a low impedance loss line includes a DC power supply 4, push-pull circuits 1 and 14, a P-channel MOS FET 2 and an N-channel MOS FET 3 constituting the push-pull circuit 1, and a power line. 5 and 12, a low impedance loss line 13, and a signal line 6. In FIG. 10, it is assumed that the characteristic impedances of the power line 5 and the signal line 6 are equal.

In FIG. 5, the definition of the ON state and the OFF state of the push-pull circuit 1 is the same as described above, and the relationship between the electric field on the transmission line and the potential of the transmission line follows electromagnetics.

The potential waveform of the signal line 6 when the push-pull circuit 1 changes from off to on, the isolated electric field waveform traveling on the signal line 6, and the potential waveform of the power line 5 and the isolated electric field waveform traveling on the power line 5 are as follows: Same as above. Therefore, the waveforms of FIGS. 2 and 3 are used to explain the operation of the circuit of FIG.

2, 3, and 5, the state of the isolated electric field wave traveling on the transmission line and the change in the potential of the transmission line when the push-pull circuit 1 changes from off to on are as described above.

In FIG. 5, assuming that the low impedance loss line 13 has a characteristic impedance of 1/1000 with respect to the signal line 6, the DC power source 4, which is an ideal power source, is connected to the power source side end of the power source line 5. 1, the isolated electromagnetic wave traveling on the power line 5 is reflected at the end of the low impedance loss line 13 and has the same polarity as the isolated electromagnetic wave excited on the signal line 6. The line 5 and the signal line 6 proceed while raising the potential from E / 2 [V] to almost E [V], and disappear with the matching termination resistor 7.

At this time, since the potential at the point B or C at the moment when the push-pull circuit 1 is turned on is 1000/1001 of the voltage (E [V]) of the DC power supply 4, the value is almost sufficient for communication. Become. Therefore, there is no degradation of signal integrity due to the influence of the power distribution circuit.

In FIG. 5, the characteristic impedance of the low impedance loss line 13 is not actually zero, so that a part of the isolated electromagnetic wave traveling through the power supply line 5 enters the low impedance loss line 13.

The electric field intensity E at a distance r [m] when a linear electromagnetic wave having radiated power P is radiated from the antenna can be obtained from the following equation shown in IEC CISPR 16-2-3.

For example, the permissible value of the interference wave electric field strength at a distance of 10 [m] from a class B information technology device intended for home use is determined by VCCI (CISPR22), and is from 30 [MHz] to 230 [MHz]. 30 [dBμV / m] and 230 [MHz] to 1 [GHz] and 37 [dBμV / m]. From the equation (14), for example, the allowable radiated power value at 230 [MHz] is 2 [nW].

In the equivalent circuit of the digital basic circuit using the low impedance loss line of FIG. 5, the push-pull circuit 1 has 20 power terminals provided in the semiconductor integrated circuit having a power consumption of 100 [W]. Assume that the terminal shares 5 W of power.

Since it is assumed that the characteristic impedance of the low impedance loss line 13 is 1/1000 of the characteristic impedance of the power line, the isolated electric field wave 8 at this time changes the potential of the signal line 6 from 0 [V] to (1000E / 1001). ) The ratio of the energy raised to [V] and the energy that the isolated electric field wave toward the power line 5 lowers the potential of the power line from E [V] to (1000E / 1001) [V] is 0.00201 The characteristic impedance ratio is about twice. Note that the ratio of the amplitude of the isolated electric field wave toward the signal line and the amplitude of the isolated electric field wave toward the power line is about 0.014 because it is the square root of the ratio of the power. Therefore, 10 [mW] of electromagnetic energy enters the low impedance loss line 13.

Here, the amount of radiated power is estimated for the case where the low impedance loss line 13 has no loss. 0.1% of the electromagnetic energy of 10 [mW] is released into the atmosphere, and the energy of 0.1% is reduced from 230 [MHz] to 1 [GHz by repeating reflection at many points until it radiates. ] Is 10 [nW] when it is assumed that it is present at one frequency between, and exceeds the allowable radiated power value 2 [nW] of the class B information technology device.

(Embodiment 2)
FIG. 6 is an example of a lead frame. FIG. 7 is an example of a state in which the low impedance loss line is bonded to the lead frame. FIG. 8 is an example viewed from the A and A ′ sides of FIG. FIG. 9 is an example viewed from the A and A ′ sides in FIG. 7 in a state where the low impedance loss line is sealed with the exterior resin. FIG. 10 is an example of a terminal surface of the low impedance loss line component. FIG. 11 is an example of a side surface of a low impedance loss line component.

In FIG. 6, the white portion shown in FIG. 6 is punched out in the lead frame 24, and the solid line portion of the hatched portion is cut. In FIG. 7, the low impedance loss line 25 is placed on the wavy line portion shown in FIG. 7 on the lead frame 24 with the first cathode layer surface of the low impedance loss line 25 facing down and the second cathode layer surface facing up.

In FIG. 8, a part of the lead frame 24 protruding from above and below is connected to the end portion in the width direction of the upper surface of the low impedance loss line 25. On the other hand, a part of the lead frame 24 is connected to the entire center portion in the width direction of the lower surface of the low impedance loss line 25. Thereafter, the low impedance loss line 25 is sealed with an exterior resin 26 whose main component is a heat-resistant epoxy resin. The lead frame 24 is cut leaving a portion exposed from the exterior resin 26 for forming the power supply terminal 27 and the ground terminal 28 shown in FIG. Next, as shown in FIGS. 10 and 11, the terminal portion exposed from the exterior resin 26 is bent to the second cathode layer surface side to form the power supply terminal 27 and the ground terminal 28. A low impedance loss line component is formed by the above process.

Silver paste is used to connect the cathode layer of the low impedance loss line 25 and a part of the lead frame 24. The exterior resin 26 is mainly composed of a compound containing a carbodiimide group that acts as a dehydrating condensing material and an epoxy resin.

(Embodiment 3)
FIG. 12 shows another example of the lead frame. FIG. 13 shows another example of the state in which the low impedance loss line is bonded to the lead frame. FIG. 14 is another example viewed from the A and A ′ sides in FIG. FIG. 15 is another example viewed from the A and A ′ side in FIG. 7 in a state where the low impedance loss line is sealed with the exterior resin. FIG. 16 is another example of the terminal surface of the low impedance loss line component. FIG. 17 is another example of the side surface of the low impedance loss line component.

In FIG. 12, the lead frame 29 has a white portion shown in FIG. 12 punched out, and a hatched portion with a solid line is cut. In FIG. 13, the low impedance loss line 30 is placed on the wavy line portion shown in FIG. 7 on the lead frame 29 with the first cathode layer surface of the low impedance loss line 30 facing down and the second cathode layer surface facing up.

In FIG. 14, a part of the lead frame 29 protruding from above and below is connected to the end of the upper surface of the low impedance loss line 30 in the width direction. On the other hand, a part of the lead frame 29 is connected to the entire center portion in the width direction of the lower surface of the low impedance loss line 25. Thereafter, the low impedance loss line 30 is sealed with an exterior resin 31 mainly composed of a heat-resistant epoxy resin. The lead frame 29 is cut leaving a portion exposed from the exterior resin 31 for forming the power supply terminal 33 and the ground terminal 32 shown in FIG. Next, as shown in FIGS. 16 and 17, the terminal portion exposed from the exterior resin 31 is bent to the second cathode layer surface side to form the power supply terminal 27 and the ground terminal 28. A low impedance loss line component is formed by the above process.

For the connection between the cathode layer of the low impedance loss line 25 and a part of the lead frame 24, a conductive metal powder paste such as a silver paste is used. The exterior resin 26 is mainly composed of a compound containing a carbodiimide group that acts as a dehydrating condensing material and an epoxy resin.

(Embodiment 4)
FIG. 18 is an example of a state where the low impedance loss line component is mounted on the printed wiring board.

In FIG. 18, a low impedance loss line component 37 is mounted on a printed wiring board 38, and a power supply terminal 35 is inserted in series with a power supply wiring 40 by a via 41. The ground terminal 34 of the low impedance loss line component 37 is connected in parallel to the ground plane 39 by a via 41. Further, the low impedance loss line components 37 are connected in the vicinity of the power supply terminals of the semiconductor integrated circuit on the printed wiring board 38 for each number of power supply terminals corresponding to the DC current capacity of the low impedance loss line components 37.

The radiated electric field intensity from the information device incorporating the printed wiring board in such a state is estimated. In this embodiment, a sponge-like etching process having a thickness of about 50 [μm] is applied to both surfaces of the anode foil of the low impedance loss line, and an aluminum oxide film having a thickness of about 10 [nm] is formed on the etching surface. Is formed by chemical conversion treatment, and the etched portion is impregnated with polythiophene which is a solid electrolyte. The width of the low impedance loss line is 1 [mm], the effective conductivity of the solid electrolyte is 1.5 × 104 [S / m], and the relative permittivity of aluminum oxide used as an insulator is 8.5. .

When the capacitance of the parallel plate constituting the low impedance loss line is C, the enlargement ratio k of the facing area by etching is obtained from the following equation.

When the frequency is f and the capacitance is C [F], the impedance ZC of the capacitor is
(2πfC) -1 [Ω], the capacitor has a characteristic impedance of 50 [Ω]
The transmission coefficient (S21C) when connected in parallel to the measurement system line can be obtained from the following equation.

If the characteristic impedance of the low impedance loss line is Z1, the transmission coefficient (S21R) to the low impedance loss line due to the influence of reflection when connected to the 50 [Ω] cable of the measurement system can be obtained from the following equation. .

Capacitance between the ends when the distance between the ends of the low-impedance loss line components is z, CT is CT0 / z, and the impedance of CT when the frequency is f is ZT. The transmission coefficient (S21T) over the above high frequency can be obtained from the following equation.

When the conductivity of the insulator constituting the loss line having the characteristic impedance of Z1 is infinite and the conductivity of the semiconductor is σP, a part of the electromagnetic wave having the impedance Z1 traveling through the insulator has a specific impedance ZP. Invade into semiconductors. The electromagnetic waves in progress in the semiconductor are electromagnetic waves that are not useful for communication other than TEM waves, and all of them are lost. When the effective conductivity of a semiconductor is defined as the value obtained by correcting the conductivity of the semiconductor with the actual loss-related ratio, the effective conductivity σ
P1 can be obtained from the following equation.

The attenuation constant αP1 when the effective conductivity is σP1 can be obtained from the following equation.

The approximate transmission coefficient (S21A) from the low frequency of the low impedance loss line component to the high frequency of 1 [GHz] or more can be obtained from the following equation by substituting αP1 obtained from the equation (23) into S21α.

The transmission coefficient (S21) of the prototype low impedance loss line component when CT0 constituting the inter-terminal capacitance is 3 × 10−17 [F / m] is obtained as follows.
When the length of the low impedance loss line is 4 [mm], -35 dB at 100 [kHz], -48 dB at 1 [MHz], -55 dB at 10 [MHz], -63 dB at 100 [MHz], 1 [ GHz]
-47 dB. When the length of the low impedance loss line is 8 [mm], -40 dB at 100 [kHz], -51 dB at 1 [MHz], -61 dB at 100 [MHz], 100 [MHz]
Is -72 dB, 230 [MHz] is -71 dB, and 1 [GHz] is -53 dB. When the length of the low impedance loss line is 16 [mm], it is -44 dB at 100 [kHz], 1 [MHz]
-55 dB, 10 [MHz] is -72 dB, 100 [MHz] is -89 dB, and 1 [GHz] is -59 dB. When the length of the low impedance loss line is 24 [mm], -47 dB at 100 [kHz], 1 [MHz]
-58 dB at 10 [MHz], -83 dB at 100 [MHz], -82 dB at 1 [MHz], and -62 dB at 1 [GHz].

In the present embodiment, the low impedance loss line component 33 is mounted in the vicinity of the semiconductor integrated circuit, and the characteristic impedance of the power supply wiring in the package of the semiconductor integrated circuit is set to 50 [Ω]. The characteristic impedance of the built-in line of the low-impedance loss line component 33 is obtained by using wk1 / 2 considering the enlargement factor k instead of w in the equation (7), and when k is 133, 0.11 [mΩ It becomes. The length of the built-in line of the low impedance loss line component 33 is 8 [mm], and the calculated value is used for the transmission coefficient (S21).

The calculated value of the transmission coefficient (S21) of the low impedance loss line 13 is 50 [Ω] which is the same value as the characteristic impedance of the power supply wiring in the package of the assumed semiconductor integrated circuit. Since the calculated value of the transmission coefficient (S21) of the low impedance loss line 13 is a value with respect to the square root of the power, it is a value obtained by adding 6 dB to the power. Accordingly, the power of the electromagnetic wave leaking from the low impedance loss line component 33 when connected to the power supply terminal of the semiconductor integrated circuit that shares the power of 5 W in total when mounted on the printed wiring board is 0.7 [mW It becomes.

0.1% of the energy of this electromagnetic energy is released into the atmosphere, and the energy of 0.1% is reduced from 230 [MHz] to 1 [GHz] by repeating reflection at many points until it radiates. The electromagnetic radiation energy is 0.7 [nW] when it is assumed to exist at one frequency in between. This value is much lower than the allowable radiated power value 2 [nW] of the class B information technology device.

The transmission coefficient (S21) at 230 [MHz] of a commercially available high-frequency chip ceramic capacitor is approximately -30 dB, which is 48 dB larger than the transmission coefficient (S21) of the low impedance loss line component 33 in the present embodiment. When one is connected to the power supply terminal of a semiconductor integrated circuit that shares a power of 5 W, the electromagnetic wave power of 230 [MHz] passing through the chip ceramic capacitor is 79 [mW], and electromagnetic radiation under the same conditions The energy is 79 [nW]. This is a value exceeding the allowable radiated power value 2 [nW] of the class B information technology device. Therefore, it is necessary to use EMC countermeasure parts and electromagnetic shielding materials for digital equipment even if a large number and a large number of capacitors are used as in the prior art, but in the case of the embodiment, these may not be used at all. The EMC problem is not expected to occur.

(Embodiment 5)
FIG. 19 is an example of a prototype low impedance loss line. FIG. 20 is an example of the frequency characteristic of the transmission coefficient (S21) of the prototype low impedance loss line.

The prototype low impedance loss line is composed of a cathode layer 50, an anode foil 51 using a valve metal, a dielectric oxide film 52, a solid electrolyte layer 53, and a carbon graphite layer 54. The valve anode foil 51 has a line length. Has been pulled out in the direction. Both ends of the extracted anode foil 51 in the line length direction serve as anode terminals, and both ends of the cathode layer 50 in the line length direction serve as cathode terminals.

The prototype low impedance loss line has a width of 1 [mm] or 1.5 [mm] and a length of 4 [mm] to 24 [mm]. An aluminum foil that has been etched is used as the anode foil 51. The anode foil 51 has a thickness of 235 [μm], and has a sponge-like etching process with a thickness of about 50 [μm] on both sides, and an aluminum oxide with a thickness of about 10 [nm] on the etched surface. A film is formed by chemical conversion treatment, and the etched portion is impregnated with polypyrrole, which is a solid electrolyte.

A carbon graphite is applied to a thickness of about 30 [μm] on polypyrrole, and a silver paste of about 50 [μm] is applied thereon to form a cathode layer. The effective conductivity of polypyrrole is assumed to be 1.5 × 10 4 [S / m], and the relative dielectric constant of aluminum oxide used as an insulator is assumed to be 8.5.

FIG. 21 is an example of a prototype low impedance loss line component. FIG. 22 shows an example of the frequency characteristic of the transmission coefficient (S21) of the prototype low impedance loss line component.

FIG. 22 shows the frequency characteristics of the transmission coefficient (S21) of a low impedance loss line component including low impedance loss lines having lengths of 4 [mm], 8 [mm], 16 [mm], and 24 [mm]. Indicates. FIG. 22 also shows the characteristics of two conventional chip ceramic capacitors. The reason why the transmission coefficient (S21) increases almost linearly at about 10 [MHz] or more is due to the electromagnetic coupling between the anode terminals used in the low impedance loss line components. If the inter-terminal capacitance CT0 per unit length governing ZT in the middle is 3 × 10−17 [F / m], the curve in FIG. 22 is obtained. Therefore, to improve the characteristics, it is necessary to reduce the electromagnetic coupling between the anode terminals.

To reduce the coupling between the anode terminals due to electromagnetic waves, reduce the capacitance between the anode terminals, that is, increase the distance between the anode terminals or reduce the facing area of the anode terminals, or reduce the coupling of the electromagnetic waves. It is effective to adjust the radiation directivity. From this viewpoint, it is considered that the terminal structure of the low impedance loss line component having the shape shown in FIGS. 6 and 7 in the third embodiment is superior to the terminal structure of the prototype low impedance loss line component. It is done.

The frequency characteristics of the transmission coefficient (S21) shown in FIG. 20 and FIG. 22 substantially coincide with the results obtained by the calculation method shown in the fourth embodiment. The main difference between the actual measurement and the calculation result is that the structure of the etched portion of the aluminum thin film is very complicated. Although electromagnetic field simulation has been attempted, modeling of the structure of the etched portion is very difficult, and it is impossible to obtain accurate characteristic impedance and transmission coefficient (S21) characteristics by simulation at the current technical level. is there. Therefore, it is considered practical to use Equation (24) in the design of low impedance loss line components.

The present invention provides a semiconductor integrated circuit having a built-in switching circuit, a high-performance information technology device, a multimedia device, and a power converter device incorporating the semiconductor integrated circuit, easy design and shortening a design period, small size and light weight, low It is possible to reduce power consumption, reduce costs, eliminate or reduce electromagnetic interference problems, reduce malfunctions due to electromagnetic noise, and improve quality and reliability.

FIG. 1 is an example of an equivalent circuit of a digital basic circuit. FIG. 2 shows a potential waveform of the signal line and an isolated electric field waveform traveling on the signal line. FIG. 3 shows a potential waveform of the power supply line and an isolated electric field waveform traveling on the power supply line. FIG. 4 is an example of a low impedance loss line. FIG. 5 is an example of an equivalent circuit of a digital basic circuit using a low impedance loss line. FIG. 6 is an example of a lead frame. FIG. 7 is an example of a state in which the low impedance loss line is bonded to the lead frame. FIG. 8 is an example viewed from the A and A ′ sides in FIG. FIG. 9 is an example viewed from the A and A ′ sides in FIG. 7 in a state where the low impedance loss line is sealed with the exterior resin. FIG. 10 is an example of a terminal surface of the low impedance loss line component. FIG. 11 is an example of a side surface of a low impedance loss line component. FIG. 12 shows another example of the lead frame. FIG. 13 shows another example of the state in which the low impedance loss line is bonded to the lead frame. FIG. 14 shows another example viewed from the A and A ′ sides in FIG. FIG. 15 is another example viewed from the A and A ′ sides in FIG. 7 in a state where the low impedance loss line is sealed with the exterior resin. FIG. 16 is another example of the terminal surface of the low impedance loss line component. FIG. 17 is another example of the side surface of the low impedance loss line component. FIG. 18 is an example of a state where the low impedance loss line component is mounted on the printed wiring board. FIG. 19 is an example of a prototype low impedance loss line. FIG. 20 is an example of the frequency characteristic of the transmission coefficient (S21) of the prototype low impedance loss line. FIG. 21 is an example of a prototype low impedance loss line component. FIG. 22 shows an example of the frequency characteristic of the transmission coefficient (S21) of the prototype low impedance loss line component.

Explanation of symbols

1, 14 Inverter or push-pull circuit
2 P-channel MOS transistor
3 N-channel MOS transistor
4 DC power supply
5, 12 Power line
6 Signal line
7 Resistor
8 Isolated electric wave on signal line
9 Potential waveform of signal line
10 Isolated electric field waves on power lines
11 Potential waveform of power line
13, 25, 30 Low impedance loss line
15, 23, 50 Cathode layer
16, 18, 20, 22, 52 Dielectric oxide film
17, 21, 53 Solid electrolyte layer
19, 51 Anode foil
24, 29 lead frame
26, 31 Exterior resin
27, 33, 35 Power terminal
28, 32, 34 Ground terminal
37 Low impedance loss line components
38 Printed wiring board
39 ground plane
40 Power supply wiring
41 Via
54 Carbon graphite layer

Claims (17)

An anode foil made of a valve metal and having an etched portion formed on both surfaces and a dielectric oxide film formed on the surface of the etched portion, and a monomer or monomer solution formed on the dielectric oxide film on both surfaces of the anode foil A first solid electrolyte layer and a second solid electrolyte layer made of a conductive polymer polymerized with an oxidizing agent, and a first formed on the surfaces of the first solid electrolyte layer and the second solid electrolyte layer. A first conductive carbon paste layer and a second conductive carbon paste layer, and a conductive metal powder paste formed on the surface of the first conductive carbon paste layer and the second conductive carbon paste layer. In a low-impedance loss line formed of one cathode layer and a second cathode layer, power terminals are provided at both ends in the length direction of the first cathode layer. A ground terminal is mounted slightly inside from both ends in the vertical direction, and at least the power supply terminal and the ground terminal are left, and the low impedance loss line is formed by being sealed with an exterior resin. Impedance loss line parts 2. The low-impedance loss line component according to claim 1, wherein the low-impedance loss line component is mounted in the vicinity of the switching element or switching circuit on a power line provided to distribute a DC power source to the switching element or switching circuit. The first cathode layer is inserted in series with the power supply line constituting the power supply line via the power supply terminal, and the second cathode layer is connected to the ground line constituting the power supply line via the ground terminal. Or a low impedance loss line component characterized by being used in parallel with a ground plate. 3. The low impedance loss line component according to claim 1, wherein the monomer is 3,4-ethylenedioxythiophene or polypyrrole. 4. The low-impedance loss line component according to claim 1, wherein the anode foil uses a portion of the lattice left by perforating the valve metal foil film that has been etched and formed with a dielectric oxide film. Low impedance loss line component characterized by being formed 5. The low impedance loss line component according to claim 1, wherein the valve action metal is aluminum. The low-impedance loss line component according to claim 1, wherein the low-impedance loss line on which the solid electrolyte layer is formed is in an atmosphere at a temperature of 60 to 90 ° C. and a relative humidity of 20 to 60%. Low impedance loss line component characterized by being re-formed for repairing the dielectric oxide film layer 7. The low impedance loss line component according to claim 1, wherein a lead frame is bonded to the first cathode layer and the second cathode layer with a conductive metal powder paste. Loss line parts The low impedance loss line component according to claim 1, wherein a part of the lead frame is adhered to a central region having a width of 60% or less of the first cathode layer by a conductive metal powder paste, A low-impedance loss line component having a projection for the power supply terminal developed in the length direction of the first cathode layer at an end portion in the length direction of the first cathode layer The low impedance loss line component according to claim 1, wherein a part of the lead frame is adhered to a central region having 60% or less of the width of the first cathode layer by a conductive metal powder paste. A low-impedance loss line component having a projection for the power supply terminal developed in the width direction of the first cathode layer at an end in the length direction of the first cathode layer 10. The low-impedance loss line component according to claim 1, wherein a part of the lead frame is formed at both end regions in the width direction that do not contact the central region of the second cathode layer by a conductive metal powder paste. A low-impedance loss line component comprising a ground terminal protrusion that is bonded and developed in a width direction of the second cathode layer inside the power terminal protrusion. 11. The low impedance loss line component according to claim 1, wherein the lead frame is made of copper, nickel, or any alloy containing them. 12. The low impedance loss line component according to claim 1, wherein the conductive metal powder paste has a long diameter of 10 [μm] or less, gold particles, silver particles, copper particles, tin particles, indium particles, palladium. A low impedance loss line component comprising at least one metal particle selected from particles, nickel particles, and any alloy particles thereof 13. The low impedance loss line component according to claim 1, wherein the low impedance loss line already bonded to the lead frame is formed by masking an end portion of the low impedance loss line with a heat resistant resin. Low impedance loss line parts 14. The low impedance loss line component according to claim 1, wherein the masking includes silicon resin, epoxy resin, phenol resin, polyimide resin, polyester resin, polyphenylene sulfide resin, polyphenylene sulfone resin, polyether sulfone resin, cyanic acid. A low-impedance loss line component characterized by being performed using at least one heat-resistant resin selected from an ester resin, a fluororesin, or a mixture or modification thereof. 15. The low impedance loss line component according to claim 1, wherein the low impedance loss line is sealed with an exterior resin together with a connection portion of the lead frame with the low impedance loss line, and the lead frame has a terminal portion. Low impedance loss line component characterized by being cut off 16. The low impedance loss line component according to claim 1, wherein the power supply terminal and the ground terminal bend the terminal portion of the lead frame to the second cathode layer side along the surface of the exterior resin. Low impedance loss line component characterized by being formed The low impedance loss line component according to any one of claims 1 to 16, wherein the exterior resin is mainly composed of a compound containing a carbodiimide group acting as a dehydrating condensing material and an epoxy resin. Track parts