JP2009250804A - Probe card and inspection method of integrated circuit - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To prevent scattering of waste occurring when a probe comes into contact with an integrated circuit without complicating or enlarging an inspection device. <P>SOLUTION: This probe card 100 prevents the scattering of the waste 203 with a barrier 103 attached to a substrate 101. Therefore, the scattering of the waste occurring when the integrated circuit is inspected can be prevented without complicating or enlarging the inspection device. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a probe card for inspecting an integrated circuit. The present invention also relates to an integrated circuit inspection method using a probe card.

  A probe card is widely used as a jig for inspecting an integrated circuit in a wafer state. A wafer test using a probe card is performed by bringing a probe (probe) into contact with an electrode formed on an integrated circuit. At this time, a part of the integrated circuit is scraped by the probe to generate dust (dust). May occur. When the scraps scatter and adhere to the integrated circuit, there is a problem that the inspection of the integrated circuit is hindered depending on the attached part.

  For example, when inspecting a solid-state image pickup device in a wafer state using a probe card, correct image quality inspection cannot be performed if dust adheres to a pixel region formed on the solid-state image pickup device. For this reason, although the pixel region is normally formed, a solid-state imaging device that is determined to be defective in the image quality inspection occurs, and the yield decreases.

  The waste generated when a solid-state image sensor is inspected using a conventional probe card will be described in more detail with reference to FIGS. FIG. 9 is a cross-sectional view of the probe card 500 and the solid-state imaging device 200. In particular, FIG. 9A shows a state in which the waste 203 is scattered when the probe card 500 is brought into contact with the solid-state imaging device 200, and FIG. 9B is a diagram when the probe card 500 is separated from the solid-state imaging device 200. A state in which the waste 203 is scattered is shown. FIG. 10 shows a state where scattered waste 203 is attached.

  As indicated by an arrow D in FIG. 9A, when the stage of the inspection apparatus on which the solid-state image sensor 200 is mounted moves upward, the electrode (pad) 202 of the solid-state image sensor 200 and the tip of the probe 502 come into contact. . At this time, the probe 502 falls down, and its tip slides in the direction of arrow E, that is, toward the center of the solid-state imaging device 200. For this reason, the surface of the solid-state imaging device 200 is scraped by the tip of the probe 502 and the waste 203 is generated. The generated waste 203 scatters toward the center of the solid-state image sensor 200.

  On the other hand, when the stage of the inspection apparatus moves downward as indicated by an arrow F in FIG. 9B, the electrode 202 of the solid-state imaging device 200 and the tip of the probe 502 are pulled apart. At this time, the probe 502 falls down, and its tip slides in the direction of arrow G, that is, toward the periphery of the solid-state imaging device 200. For this reason, the surface of the solid-state imaging device 200 is shaved again by the tip of the probe 502, and waste 203 is generated. The generated waste 203 scatters toward the periphery of the solid-state imaging device 200.

  Note that the waste 203 generated by the contact with the probe 502 is not only in the directions shown in FIGS. 9A and 9B, but also in any direction around the probe 502 although there is some amount. There is a possibility of scattering. Further, the waste 203 that normally scatters in the direction of the arrow G, that is, the peripheral direction of the solid-state imaging device 200 generates a larger amount than the waste 203 that scatters in the direction of the arrow E, that is, the central direction of the solid-state imaging device 200. .

  As shown in FIG. 10, when the dust 203 adheres to the pixel region 201 of the solid-state imaging device 200, even if there is no problem with the solid-state imaging device 200 itself, an image is not captured correctly due to the influence of the waste 203. This causes the yield.

Patent Document 1 discloses a technique for preventing dust generated by a wafer test using a probe card from adhering to a wafer. Specifically, it describes that the generated debris is dropped by gravity by bringing the probe into contact with the wafer while the stage on which the wafer is placed is turned sideways (rotated by 90 degrees or more). Yes.
Japanese Patent Laid-Open No. 9-232390 (Publication date: September 5, 1997)

  However, in the method of dropping the scraps described in Patent Document 1 by gravity, the inspection apparatus is inevitably complicated and large. This is because it is necessary to provide the inspection apparatus with a mechanism for rotating the stage on which the wafer is placed and a mechanism for holding the probe card sideways. Further, accuracy is required to correctly bring the probe card into contact with the electrodes (pads) of the integrated circuit in the horizontal state.

  The present invention has been made in view of the above problems, and an object of the present invention is to prevent scattering of debris generated when inspecting an integrated circuit without increasing the complexity and size of the inspection apparatus. It is to provide a probe card that can be used.

  In order to solve the above problems, a probe card according to the present invention includes a substrate, a probe attached to the substrate in an inclined manner, and a barrier attached to the substrate, the probe card including the probe and perpendicular to the substrate. And a barrier arranged so as to intersect with a flat surface.

  According to said structure, scattering of the waste which generate | occur | produces when test | inspecting an integrated circuit using the said probe card can be prevented. This is because when the probe is brought into contact with the integrated circuit, the probe is tilted in a tilted direction. At this time, the tip of the probe slides in the direction in which the probe is inclined on the intersection line between the surface including the probe and the surface perpendicular to the substrate. Further, when the probe is pulled away from the integrated circuit, the tip of the probe is opposite to the direction in which the probe is inclined on the line of intersection between the substrate and the plane perpendicular to the substrate including the probe. Glide in the direction. Therefore, debris generated when the integrated circuit is inspected using the probe is scattered mainly in a plane including the probe and perpendicular to the substrate.

  On the other hand, the probe card includes a barrier including the probe and arranged so as to intersect a plane perpendicular to the substrate. Therefore, it is possible to prevent dust generated when the integrated circuit is inspected using the probe from being scattered over the barrier.

  Moreover, since the scattering of debris generated when the integrated circuit is inspected using the probe is prevented by the barrier, the debris adheres to the integrated circuit by gravity by rotating the integrated circuit to be inspected. There is no need to prevent that. Therefore, there is an effect that an inspection apparatus including the probe can be configured without incurring complication and enlargement.

  It is preferable that the barrier of the probe card according to the present invention has an insulating property.

  According to said structure, even if the said barrier contacts an integrated circuit, there exists the further effect that the electrical property of the said integrated circuit is not affected.

  The barrier of the probe card according to the present invention is preferably black.

  According to said structure, when inspecting an integrated circuit, for example, a solid-state image sensor using the said probe card, the light emitted from the light source is not reflected by the said barrier. Therefore, since the amount of light incident on the pixel area of the solid-state image sensor can be kept constant, there is a further effect that the inspection of the solid-state image sensor can be performed with high accuracy.

  It is preferable that the barrier of the probe card according to the present invention has adhesiveness.

  According to the above configuration, since the barrier deposits debris, the debris does not remain on the integrated circuit even after the probe card is pulled away from the integrated circuit after the inspection of the integrated circuit is completed. Therefore, since the waste remaining on the integrated circuit does not move due to the influence of airflow or vibration and adhere to the part that hinders the inspection of the integrated circuit, there is a further effect that a correct inspection can be performed. .

  It is preferable that the barrier of the probe card according to the present invention has a light shielding property.

  According to the above configuration, since the barrier does not transmit light, when inspecting a plurality of integrated circuits, for example, a plurality of solid-state image sensors at the same time, each pixel region of the plurality of solid-state image sensors is necessary for the inspection. It is possible to prevent light emitted from other than the light source from entering.

  It is preferable that the probe of the probe card according to the present invention does not intersect with a plane passing through the tip of the barrier and parallel to the substrate.

  According to said structure, when making the said probe card contact an integrated circuit, the said barrier contacts the said integrated circuit before the said probe. Accordingly, the barrier that is already in contact with the integrated circuit prevents the scattering of debris generated when the tip of the probe and the integrated circuit come into contact with each other. Further, the barrier that is still in contact with the integrated circuit prevents scattering of dust generated when the tip of the probe and the integrated circuit are separated from each other. Therefore, there is a further effect that it is possible to more reliably prevent the dust from scattering over the barrier.

  The probe card according to the present invention is preferably used for a wafer test of a solid-state imaging device.

  In order to solve the above problems, an integrated circuit inspection method using a probe card according to the present invention includes a step of bringing the barrier into contact with the integrated circuit, and the probe after the barrier is brought into contact with the integrated circuit. Contacting the integrated circuit, separating the probe from the integrated circuit, and separating the probe from the integrated circuit and then separating the barrier from the integrated circuit. It is a feature.

  According to said structure, the said barrier which has already contacted the said integrated circuit prevents the scattering of the waste generated when the said probe contacts the said integrated circuit. Further, the barrier that is still in contact with the integrated circuit prevents the scattering of debris generated when the probe is pulled away from the integrated circuit. Therefore, there is an effect that it is possible to reliably prevent debris from scattering over the barrier.

  As described above, the probe card according to the present invention includes a barrier that is attached to a substrate and includes a probe and is arranged so as to intersect with a surface perpendicular to the substrate. Therefore, it is possible to prevent dust generated when the integrated circuit is inspected using the probe from being scattered over the barrier.

  An embodiment of the present invention will be described below with reference to the drawings.

  First, the configuration of the probe card 100 according to the present embodiment will be described with reference to FIG. FIG. 1 is a cross-sectional view showing the configuration of the probe card 100.

  The probe card 100 is an apparatus for inspecting the electrical characteristics of the solid-state imaging device 200 in the wafer state. As shown in FIG. 103. The probe 102 is inclined in a specific direction, and the tip of the probe 102 is in contact with the electrode 202 of the solid-state imaging device 200. The barrier 103 includes the probe 102 and is disposed so as to intersect with a plane perpendicular to the substrate, and prevents the dust generated by the probe 102 from coming into contact with the solid-state imaging device 200 from being scattered. .

  The inspection of the electrical characteristics is performed by raising the stage on which the solid-state imaging device 200 in a wafer state is placed and bringing the electrode 202 and the probe 102 into contact with each other. At this time, the probe 102 falls in the direction of decreasing the angle formed with the substrate 101, and the tip of the probe 102 slides in the direction shown as an arrow A. That is, the probe 102 slides in the direction in which the probe 102 is inclined on the intersection line between the surface including the probe 102 and the substrate 101 and the substrate 101. As a result, the surface of the solid-state imaging device 200 is scraped, and the scrap 203 tends to scatter in the direction illustrated as the arrow A. That is, an attempt is made to scatter in a direction in which the probe 102 is inclined in a plane including the probe 102 and perpendicular to the substrate 101.

  However, since the barrier 103 including the probe 102 and disposed so as to intersect the plane perpendicular to the substrate 101 is provided in a direction in which the probe 102 is inclined when viewed from the probe 102, the scrap 203 exceeds the barrier 103. Will not scatter. That is, the waste 203 does not adhere to the pixel region 201 of the solid-state image sensor 200.

  However, the arrangement of the barriers 103 is not limited to that shown in FIG. For example, as shown in FIG. 2, the barrier 103 may be provided in a direction opposite to the direction in which the probe 102 is inclined when viewed from the probe 102. In this case, when the electrode 202 and the probe 102 are pulled apart by lowering the stage, the surface of the plane including the probe 102 and perpendicular to the substrate 101 is scattered in a direction opposite to the direction in which the probe 102 is inclined. It is possible to prevent the dust 203 from adhering to the solid-state image sensor 200 ′ adjacent to the solid-state image sensor 200.

  2 is configured such that when the probe 102 is brought into contact with the electrode 202, the barrier 103 comes into contact with the scribe line. For this reason, there is no possibility that the barrier 103 contacts the solid-state image sensor 200 or the solid-state image sensor 200 ′ adjacent to the solid-state image sensor 200 and causes damage. However, if it is not necessary to consider the damage that the barrier 103 causes to the solid-state imaging device 200, the solid-state imaging device adjacent to the barrier 103 when the probe 102 is brought into contact with the electrode 202 as shown in FIG. You may comprise so that it may contact 200 '. Even in this case, the waste 203 does not adhere to the pixel region 201 of the adjacent solid-state imaging device 200 ′.

  The barrier 103 preferably has an insulating property. This is because, if the barrier 103 has an insulating property, even if it contacts the solid-state imaging device 200 and the solid-state imaging device 200 ′, the electrical characteristics of the solid-state imaging device 200 are not affected.

  Furthermore, as shown in FIG. 4, barriers 103 may be attached to both the side where the probe 102 is inclined and the side opposite to the side where the probe 102 is inclined. In this case, it is possible to simultaneously prevent the dust 203 from adhering to the pixel region 201 of the solid-state image sensor 200 and adhering to the pixel region 201 of the adjacent solid-state image sensor 200 ′. By attaching a plurality of barriers in combination as described above, the effect of preventing the dust 203 from being scattered can be further enhanced.

  Further, as shown in FIG. 5, the barrier is preferably black. FIG. 5 is a cross-sectional view of a probe card 100a having a black barrier 103a. The arrangement and shape of the probe card 100a in FIG. 5 are the same as the probe card 100 in FIG. 2, but differ from the probe card 100 shown in FIG. 2 in that the barrier 103a is black.

  Usually, when the image quality inspection of the solid-state image sensor 200 is performed, the solid-state image sensor 200 is irradiated with light emitted from the light source 301 shown in FIG. At this time, since the barrier 103a is black, the light emitted from the light source 301 is not reflected. Therefore, the reflected light reflected by the barrier 103a does not enter the pixel region 201 of the solid-state imaging device 200. That is, since the amount of light incident on the pixel region 201 of the solid-state image sensor 200 can be kept constant, the image quality inspection can be performed with high accuracy.

  Moreover, as shown in FIG. 6, it is preferable that a barrier has adhesiveness. FIG. 6 is a cross-sectional view of a probe card 100b provided with an adhesive barrier 103b. The arrangement and shape of the probe card 100b of FIG. 6 are the same as the probe card 100 of FIG. 2, but differ from the probe card 100 shown in FIG. 6 in that the barrier 103b has adhesiveness.

  Since the barrier 103b has adhesiveness, the waste 203 can be attached. Thereby, the waste 203 does not remain on the solid-state imaging device 200 after the inspection is completed. Therefore, the debris remaining on the integrated circuit does not move to the pixel region 201 of the solid-state imaging device 200 due to the influence of airflow or vibration. Therefore, a correct inspection can be performed.

  Further, it is preferable to provide a light blocking property to the barrier so that light emitted from a light source provided for image quality inspection of each solid-state imaging device does not interfere with each other as shown in FIG. More specifically, in accordance with the configuration shown in FIG. 7, the light sources 301 a to 301 a irradiate the solid-state imaging devices 200 a to 200 d in order to perform the image quality inspection of the obliquely arranged solid-state imaging devices 200 a to 200 d simultaneously and accurately. It is preferable that the light emitted from 301d does not interfere with each other.

  In FIG. 7, the barrier 103c provided between the solid-state imaging devices 200a and 200b is such that light emitted from the light source 301a enters the pixel region of the solid-state imaging device 200b and light emitted from the light source 103b. Is prevented from entering the solid-state imaging device 200a. Thereby, only the light emitted from the light source 301a can be irradiated to the solid-state imaging device 200a. The same applies to the barrier 103d provided between the solid-state imaging device 200b and the solid-state imaging device 200c and the barrier 103e provided between the solid-state imaging device 200c and the solid-state imaging device 200d.

  Finally, a solid-state imaging device inspection method using the probe card of the present invention will be described with reference to FIG. 8 shows the probe card 100 when the probe 102 shown in FIG. 4 measures the output of the electrode 202 aligned at the left end of the solid-state image sensor 200 and the output of the electrode 202 aligned at the right end from the left and right, respectively. It is a figure which shows a series of operation | movement after contacting 200 and leaving | separating.

  As shown in FIG. 8A, the probe 102 and the barrier 103 of the probe card 100 are not in contact with the solid-state image sensor 200 before the inspection of the solid-state image sensor.

  Thereafter, when the stage of the inspection apparatus on which the solid-state imaging device 200 is placed rises in the direction illustrated by the arrow B, the barrier 103 contacts the solid-state imaging device 200 before the probe 102 as shown in FIG. To do. At this time, the probe 102 has not yet contacted the solid-state imaging device 200. This is because the probe 102 is configured so as not to cross the plane parallel to the substrate 101 through the tip of the barrier 103.

  Thereafter, when the stage is further raised, the probe 102 comes into contact with the solid-state imaging device 200 as shown in FIG. At this time, the surface of the solid-state imaging device 200 is scraped by the probe 102, and waste 203 is generated. However, the waste 203 is not scattered by the barrier 103. This is because the barrier 103 is already in contact with the solid-state imaging device 200 before the probe 102.

  Thereafter, the inspection is performed in the state shown in FIG. 8C, and after the inspection is completed, when the stage is lowered in the direction shown by the arrow C, the probe 102 is moved ahead of the barrier 103 as shown in FIG. It is pulled away from the solid-state image sensor 200. At this time, the surface of the solid-state imaging device 200 is scraped by the probe 102, and waste 203 is generated. However, the waste 203 is not scattered by the barrier 103. This is because the barrier 103 is still in contact with the solid-state image sensor 200 when the probe 102 is separated from the solid-state image sensor 200.

  Thereafter, when the stage is further lowered, the barrier 103 is separated from the solid-state imaging device 200 as shown in FIG. Since the barrier 103 has adhesiveness and adheres the waste 203, the waste 203 does not remain on the solid-state imaging device 200. Therefore, the waste 203 remaining on the solid-state imaging device 200 after the inspection is not moved to the pixel region 201 of the solid-state imaging device 200 due to the influence of airflow or vibration.

  By performing such a series of operations, it is possible to more reliably prevent the dust 203 generated by the probe 102 from scraping the surface of the solid-state image sensor 200 from scattering into the pixel region 201 of the solid-state image sensor 200.

[Additional Notes]
The present invention is not limited to the above-described embodiments, and various modifications can be made within the scope of the claims. That is, embodiments obtained by combining technical means appropriately modified within the scope of the claims are also included in the technical scope of the present invention.

  The present invention can also be expressed as follows, for example.

  1. A probe card device for electrically connecting a measuring device and a chip formed on the semiconductor wafer for characteristic measurement and function test of the chip formed on the semiconductor wafer, around the probe A probe card device having a barrier for preventing contact dust from scattering.

  2.1. The probe card device according to 2.1, which has an insulating material barrier.

  The probe card device according to 3.1, wherein the barrier is black.

  4.1. The probe card device according to 4.1, wherein the barrier is adhesive.

  The probe card device according to 5.1, which has a light blocking barrier.

  The probe card device according to 6.1, wherein when the probe card performs a series of contact operations with the wafer, the barrier comes in contact with the probe first, and the barrier leaves after the probe.

  The probe card device according to any one of 7.1 to 6 is used for a wafer test of a solid-state imaging device.

  8). A probing method for a probe card device, wherein when a probe card performs a series of contact operations on a wafer, the barrier comes in contact with the probe first, and the barrier leaves after the probe.

  The probe card of the present invention can be suitably used for a wafer test of an integrated circuit, and can be particularly suitably used for a wafer test of a solid-state imaging device.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1, showing an embodiment of the present invention, is a cross-sectional view showing a configuration example of a probe card. The embodiment of the present invention is shown and it is sectional drawing which shows the other structural example of a probe card. The embodiment of the present invention is shown and it is sectional drawing which shows the other structural example of a probe card. The embodiment of the present invention is shown and it is sectional drawing which shows the other structural example of a probe card. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 illustrates an embodiment of the present invention and is a cross-sectional view illustrating a configuration of a probe card having a black barrier. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 illustrates an embodiment of the present invention, and is a cross-sectional view illustrating a configuration of a probe card in which a barrier has adhesiveness. FIG. 4 is a diagram illustrating a step of simultaneously inspecting a plurality of solid-state imaging elements using a probe card having a light-shielding barrier, according to an embodiment of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1, showing an embodiment of the present invention, is a diagram illustrating a solid-state image sensor inspection method using a probe card. (A) is sectional drawing which shows the probe card before a probe and a barrier contact a solid-state image sensor, (b) is sectional drawing which shows a probe card when a barrier contacts a solid-state image sensor, (c) ) Is a cross-sectional view showing the probe card under inspection, (d) is a cross-sectional view showing the probe card when the probe is pulled away from the solid-state image sensor, and (e) is a cross-section showing the barrier separated from the solid-state image sensor. It is sectional drawing which shows the probe card after the completion | finish of another inspection. It is a sectional view of a probe card and a solid-state image sensor, showing the prior art. It is a top view of a solid-state image sensor which shows a prior art.

Explanation of symbols

DESCRIPTION OF SYMBOLS 100 Probe card 101 Board | substrate 102 Probe 103 Barrier 103a Black barrier 103b Adhesive barrier 103c-103e Light-shielding barrier 200 Solid-state image sensor (integrated circuit)
200a to 200d Solid-state imaging device (integrated circuit)
201 Pixel region 202 Electrode 203 Waste 301 Light source 301a to 301d Light source

Claims (8)

A substrate,
A probe attached to the substrate at an angle;
A barrier attached to the substrate, the barrier including the probe and disposed so as to intersect a plane perpendicular to the substrate.
A probe card characterized by that. The barrier has an insulating property.
The probe card according to claim 1. The barrier is black;
The probe card according to claim 1 or 2, wherein The barrier has adhesiveness,
The probe card according to any one of claims 1 to 3, characterized in that: The barrier has a light shielding property,
The probe card according to any one of claims 1 to 4, wherein: The probe does not cross a plane parallel to the substrate through the tip of the barrier;
The probe card according to any one of claims 1 to 5, wherein It is used for wafer testing of solid-state imaging devices.
The probe card according to any one of claims 1 to 6, characterized in that: An inspection method for an integrated circuit using the probe card according to claim 1,
Contacting the barrier with the integrated circuit;
Contacting the probe with the integrated circuit after contacting the barrier with the integrated circuit;
Pulling the probe away from the integrated circuit;
Separating the barrier from the integrated circuit after pulling the probe away from the integrated circuit.
A method for inspecting an integrated circuit.

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