JP2009248355A - Ink-jet recording head, ink-jet recording apparatus, and method for manufacturing ink-jet recording head - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an ink-jet recording head which enables a recording head to be of a small area, and to provide an ink-jet recording apparatus and a method for manufacturing the ink-jet recording head. <P>SOLUTION: The ink-jet recording head 100 which includes pressure generation chambers 10 which receive supply of an ink liquid, nozzle openings 62 which communicate with the pressure generation chambers 10, and a diaphragm 20 faced to the pressure generation chambers 10, and ejects the ink liquid from the nozzle openings 62 by pressure change in the pressure generation chambers 10 includes a driver circuit 64 formed in a region opposed to the diaphragm 20 via the pressure generation chamber 10 of a nozzle plate 60. In this constitution, the pressure generation chamber 10 and the driver circuit 64 are arranged to superpose in a longitudinal direction (namely, a thickness direction) in a sectional view. Therefore, the recording head 100 can be made small in area, and its miniaturization is enabled. Heat radiation is also facilitated because the heat generated in the driver circuit 64 is easy to be robbed by the flowing ink liquid. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to an ink jet recording head, an ink jet recording apparatus, and a method for manufacturing an ink jet recording head, and more particularly to a technique that enables a recording head to have a small area.

Conventionally, in an ink jet recording head, a circuit for driving a piezoelectric element (hereinafter referred to as a driver circuit) is manufactured on a separate substrate as an IC element and mounted on the recording head. Is connected by wire bonding. However, the density of nozzle openings for discharging ink liquid is increasing, and the above-described connection by wire bonding is approaching the limit. For such a problem, if the driver circuit is not formed on a separate substrate, but directly formed on the flow path forming substrate constituting the recording head, for example, as disclosed in Patent Document 1, a wire is obtained. Since it is possible to electrically connect the driver circuit and the piezoelectric element without depending on the bonding, it is possible to cope with an increase in the density of the nozzle openings.
JP 2001-205815 A

By the way, according to the ink jet recording head disclosed in Patent Document 1, since the driver circuit and the piezoelectric element are arranged side by side in a cross-sectional view, the area of the recording head is large and miniaturization is prevented. There was a possibility.
Accordingly, the present invention has been made in view of such circumstances, and an ink jet recording head, an ink jet recording apparatus, and an ink jet recording apparatus that can reduce the area of the recording head by devising the arrangement position of the integrated circuit. An object is to provide a method for manufacturing a recording head.

[Invention 1-6] The ink jet recording head of Invention 1 includes a pressure generation chamber that receives supply of ink liquid, a nozzle opening that communicates with the pressure generation chamber, a vibration film that faces the pressure generation chamber, And an integrated circuit formed in a region facing the vibration film across the pressure generation chamber of the substrate facing the pressure generation chamber. Here, the “integrated circuit” of the present invention is a driver circuit for driving an ink jet recording head, for example.
An ink jet recording head according to a second aspect is the ink jet recording head according to the first aspect, wherein the substrate is a first substrate on which the pressure generating chamber is formed, and a second substrate bonded to one surface of the first substrate. And the vibration film is formed on the other surface of the first substrate, and the integrated circuit is formed in a region facing the vibration film across the pressure generation chamber of the second substrate. It is characterized by being.

An ink jet recording head according to a third aspect is the ink jet recording head according to the second aspect, wherein the nozzle opening is formed in the second substrate, and the integrated circuit is formed avoiding the nozzle opening. It is characterized by.
An ink jet recording head according to a fourth aspect is the ink jet recording head according to the second or third aspect, wherein the piezoelectric element formed on the other surface of the first substrate via the vibration film, the piezoelectric element, and the integrated circuit And a wiring for connecting to the first substrate, wherein the wiring is formed through the first substrate.

An ink jet recording head according to a fifth aspect of the present invention is the ink jet recording head according to any one of the second to fourth aspects, further comprising a third substrate bonded to the other surface of the first substrate, wherein the third substrate is attached to the third substrate. Is formed with a recess, and the piezoelectric element is sealed in the recess.
The ink jet recording head according to a sixth aspect of the invention is the ink jet recording head according to the fifth aspect, further comprising a reservoir communicating with the pressure generating chamber, wherein the reservoir is formed on the third substrate. is there.

  According to the ink jet recording heads of the first to sixth aspects, the pressure generating chamber and the integrated circuit are arranged so as to overlap in the longitudinal direction (that is, the thickness direction) in a cross-sectional view, so that the area of the recording head is reduced. The size can be reduced. In addition, during operation of the ink jet recording head, in an integrated circuit formed on a substrate (for example, the second substrate) facing the pressure generation chamber, ink liquid flows in the pressure generation chamber, and heat generated by the circuit operation is generated. Is easily taken away by the flowing ink liquid. For this reason, heat radiation from the integrated circuit is easy, and problems caused by heat can be reduced. Therefore, the reliability of the recording head can be improved.

[Invention 7] An ink jet recording apparatus according to an invention 7 includes the ink jet recording head according to any one of the inventions 1 to 6.
With such a configuration, the ink jet recording heads of the inventions 1 to 6 are applied, so that the ink jet recording apparatus can be downsized and the reliability can be improved.
[Invention 8] A method of manufacturing an ink jet recording head according to Invention 8 includes a pressure generation chamber that receives supply of ink liquid, a nozzle opening that communicates with the pressure generation chamber, a vibration film that faces the pressure generation chamber, A method of manufacturing an ink jet recording head comprising: forming an integrated circuit in a region of the substrate facing the pressure generating chamber, the region facing the vibration film across the pressure generating chamber. .
According to such a method, the area of the recording head can be reduced and the size can be reduced. In addition, since heat radiation from the integrated circuit is easy, problems caused by heat can be reduced, and the reliability of the recording head can be improved.

Hereinafter, embodiments of the present invention will be described with reference to the drawings. Note that, in each drawing described below, parts having the same configuration are denoted by the same reference numerals, and redundant description thereof is omitted.
FIG. 1 is a cross-sectional view illustrating a configuration example of an ink jet recording head 100 according to an embodiment of the present invention. As shown in FIG. 1, the ink jet recording head 100 is formed on, for example, a flow path forming substrate 1, a vibrating film 20 formed on the surface of the flow path forming substrate 1, and the vibrating film 20. A piezoelectric element (that is, a piezo element) 30, a sealing plate 40 bonded to the front surface side of the flow path forming substrate 1, and a nozzle plate 60 bonded to the back surface side of the flow path forming substrate 1 are provided.
Among these, the flow path forming substrate 1 is, for example, a bulk silicon substrate having a plane orientation (100). The flow path forming substrate 1 has a thickness of 50 μm to 500 μm, for example, and is formed with a plurality of individually divided ink flow paths. Here, the ink flow path is a path through which the ink liquid flows, and includes the pressure generation chamber 10.

  The vibration film 20 is an elastic film and is formed on the surface of the flow path forming substrate 1 to cover the pressure generation chamber 10. The piezoelectric element 30 is formed directly above the pressure generating chamber 10 with the vibration film 20 interposed therebetween. The piezoelectric element 30 includes a lower electrode 31, a piezoelectric body 32 formed on the lower electrode 31, and an upper electrode 33 formed on the piezoelectric body 32. Here, the lower electrode 31 is a common electrode across a plurality of piezoelectric elements 30, for example. The piezoelectric body 32 is a dielectric that expands, contracts, or is distorted when a voltage is applied, and is, for example, lead zirconate titanate (PZT). Further, unlike the lower electrode 31, the upper electrode 33 is not a common electrode but an individual electrode corresponding to each piezoelectric body in a 1: 1 ratio. The piezoelectric element 30 having such a configuration is provided directly above each pressure generation chamber 10. In addition, wiring 35 and the like connected to the piezoelectric element 30 are formed on the surface of the flow path forming substrate 1. The wiring 35 shown in FIG. 1 is a wiring for drawing out the upper electrode 33, but a wiring (not shown) for drawing out the lower electrode 31 is also formed on the surface of the flow path forming substrate 1.

  The sealing plate 40 is made of, for example, a bulk silicon substrate having a surface orientation (110) (however, when the reservoir 45 made of a through hole shown in FIG. 3A is formed by wet etching, the sealing plate 40 has a surface orientation (110). A bulk silicon substrate is suitable for the sealing plate 40. Further, when the reservoir 45 is formed by dry etching, a bulk silicon substrate having a plane orientation (100) is suitable for the sealing plate 40). A recess 42 for sealing the piezoelectric element 30 is provided in a region of the surface of the sealing plate 40 facing the piezoelectric element 30. As shown in FIG. 1, the surface of the sealing plate 40 is bonded to the surface of the flow path forming substrate 1 via an adhesive (not shown), and the piezoelectric element 30 has a space that does not hinder its movement. In this state, it is sealed (that is, sealed) in the recess 42.

The sealing plate 40 has a through hole formed from the front surface to the back surface. This through hole is a reservoir 45 that receives the supply of ink liquid from the outside. The reservoir 45 is formed large so as to have a volume sufficiently larger than the volumes of all the pressure generation chambers 10 described above.
On the other hand, the surface of the nozzle plate 60 is joined to the back surface of the flow path forming substrate 1 via an adhesive (not shown). The nozzle plate 60 is made of, for example, a bulk silicon substrate having a plane orientation (100). The nozzle plate 60 is provided with through holes from the front surface to the back surface. This through hole is the nozzle opening 62. The nozzle opening 62 communicates with the pressure generation chamber 10. Note that the volume of the pressure generation chamber 10 that applies pressure to the ink liquid and the size of the nozzle opening 62 are optimized in accordance with the discharge amount of the ink liquid, the discharge speed, the discharge frequency, and the like.

  A driver circuit 64 for driving the piezoelectric element 30 is integrally formed on the surface of the nozzle plate 60 and in a region facing the vibration film 20 with the pressure generating chamber 10 interposed therebetween. A plurality of pad electrodes (not shown) are formed on the active surface (that is, the circuit formation surface) of the driver circuit 64. On these pad electrodes, contact holes penetrating the flow path forming substrate 1 are respectively disposed, and through electrodes 37 are provided so as to fill the contact holes. The through electrode 37 connects the wiring 35 for extracting the upper electrode 33 and the driver circuit 64, whereby the upper electrode 33 and the driver circuit 64 are electrically connected. Similarly, another through electrode 37 (not shown) connects a wiring (not shown) for drawing out the lower electrode 31 and the driver circuit 64, whereby the lower electrode 31 and the driver circuit 64 are electrically connected. It is connected.

  The ink jet recording head 100 having such a configuration takes ink liquid from an external ink supply means (not shown) into the reservoir 45 and, as indicated by an arrow in the figure, the ink extends from the reservoir 45 to the nozzle opening 62. Fill with liquid. Then, according to the recording signal from the driver circuit 64, a voltage is applied between the upper electrode 33 and the lower electrode 31 of the piezoelectric element 30 to expand and contract the piezoelectric body 32 or cause distortion. Accordingly, the vibration film 20 is deformed to increase the pressure in the pressure generation chamber 10, and the ink liquid is discharged from the nozzle opening 62.

  By the way, in the ink jet recording head 100, the pressure generating chamber 10 and the driver circuit 64 are arranged so as to overlap in the longitudinal direction (that is, the thickness direction) in a sectional view. Thereby, the area of the recording head 100 can be reduced. Further, when the ink jet recording head 100 is operated, the ink liquid flows in the pressure generation chamber 10. For this reason, in the driver circuit 64 formed in the nozzle plate 60, the heat generated by the circuit operation is easily taken away by the flowing ink liquid.

  Next, a method for manufacturing the ink jet recording head 100 will be described. 2-7 is sectional drawing which shows the manufacturing method of the inkjet recording head 100 which concerns on embodiment of this invention. This manufacturing method includes a sealing plate 40 forming step, a flow path forming substrate 1 side forming step, a nozzle plate 60 forming step, a sealing plate 40 and a nozzle plate 60 with respect to the flow path forming substrate 1. These are roughly divided into a process for joining each of them (hereinafter also simply referred to as a joining process). Here, a forming process for the sealing plate 40, a forming process on the flow path forming substrate 1 side, and a nozzle plate 60 are used. The forming process will be described in order, and finally the bonding process will be described.

  First, in the formation process of the sealing plate 40, as shown in FIG. 2A, a substrate made of, for example, bulk silicon is prepared as the sealing plate 40. The substrate is not limited to a silicon substrate, and may be a substrate made of a material other than silicon. Next, as shown in FIG. 3A, the surface of the sealing plate 40 is partially etched by photolithography and etching techniques to form a recess 42 for sealing the piezoelectric element. Here, for example, the concave portion 42 is formed such that the shape of the concave portion 42 in plan view is similar to that of the piezoelectric element and has a large area, and the depth of the concave portion 42 is greater than the thickness of the piezoelectric element. Thereby, the recessed part 42 which can seal a piezoelectric element can be formed in the state which ensured the space of the grade which does not inhibit the motion of a piezoelectric element. In the present invention, the piezoelectric elements are not individually sealed, but a plurality of piezoelectric elements are arranged in one recess 42, whereby the plurality of piezoelectric elements are collectively sealed by one recess 42. You may make it stop. In this case, the recess 42 may be formed wide so that a plurality of piezoelectric elements can be sealed together.

Next, the sealing plate 40 is partially etched and penetrated by photolithography and etching techniques to form a reservoir 45 including a through hole. Here, for example, the reservoir 45 is formed by wet etching using a potassium hydroxide (KOH) aqueous solution or dry etching. Here, the case where the reservoir 45 is formed after the recess 42 is formed has been described, but the order of formation is not limited to this. For example, the reservoir 45 may be formed before the recess 42 is formed, or the recess 42 and the reservoir 45 may be formed simultaneously. In this way, the sealing plate 40 is completed.
Next, in the formation process on the flow path forming substrate 1 side, a substrate made of, for example, bulk silicon is prepared as the flow path forming substrate 1 as shown in FIG. The substrate is not limited to a silicon substrate, and may be a substrate made of a material other than silicon.

Next, as shown in FIG. 3B, the vibration film 20 is formed on the surface of the flow path forming substrate 1. The vibration film 20 is an elastic film as described above, and is made of, for example, a SiO ₂ film, zirconium oxide (ZrO ₂ ), or a film in which these are laminated, and has a thickness of, for example, 1 to 2 μm. When ZrO ₂ is used for the vibration film 20, for example, ZrO ₂ is formed by sputtering (reactive sputtering film formation) of zirconium (Zr) with plasma containing O ₂ . Alternatively, ZrO ₂ may be formed by forming Zr on the surface of the flow path forming substrate 1 and then thermally oxidizing Zr in a diffusion furnace at 500 to 1200 ° C. Although the material of the vibration film 20 is not limited to the above-mentioned type, it is preferable to use a material that is not etched or hardly etched in the step of forming the pressure generating chamber by etching the flow path forming substrate 1.

  Next, as shown in FIG. 4B, piezoelectric elements 30 are formed on the vibration film 20 corresponding to the individual pressure generation chambers 10. Here, the lower electrode film is formed on the vibration film 20 by sputtering, for example. As a material of the lower electrode film, platinum (Pt), iridium (Ir), or the like is preferable. The reason is that a piezoelectric film described later formed by sputtering or sol-gel method needs to be crystallized by baking at a temperature of about 600 to 1000 ° C. in an air atmosphere or an oxygen atmosphere after the film formation. Because. For the material of the lower electrode film, it is necessary to select and use a material that can maintain conductivity under such high temperature and oxidizing atmosphere. In particular, when lead zirconate titanate (PZT) is used as the piezoelectric film, it is desirable to select and use a material that exhibits little change in conductivity due to diffusion of lead oxide. Pt, Ir, etc. are suitable as materials that satisfy such conditions. Next, the lower electrode film is partially etched by photolithography and etching techniques to form the lower electrode 31 having a shape as a common electrode.

  Then, a piezoelectric film is formed. Here, for example, a so-called sol in which a metal organic substance is dissolved and dispersed in a catalyst is applied, dried and gelled, and further sintered at a high temperature (that is, a sol-gel method) to form a piezoelectric film. As the material of the piezoelectric film, a PZT material is suitable, and the sintering temperature in that case is about 700 ° C., for example. The method for forming the piezoelectric film is not limited to the sol-gel method, and for example, the film may be formed by a spin coating method such as a sputtering method or a MOD method (organic metal thermal coating decomposition method). Alternatively, a PZT precursor film may be formed by a sol-gel method, a sputtering method, a MOD method, or the like, and then formed by a method of crystal growth at a low temperature by a high-pressure treatment method in an alkaline aqueous solution. The thickness of the piezoelectric film formed by such a method is, for example, 0.2 to 5 μm.

  Next, an upper electrode film is formed. The upper electrode film only needs to be a highly conductive material, and a metal film such as Al, gold (Au), nickel (Ni), or Pt, or a conductive oxide can be used. Next, the upper electrode film and the piezoelectric film are sequentially partially etched by photolithography and etching techniques to form the upper electrode 33 and the piezoelectric body 32 having a predetermined shape. Thereby, the piezoelectric element 30 including the lower electrode 31, the piezoelectric body 32, and the upper electrode 33 is completed on the vibration film 20.

In the present embodiment, the lower electrode 31 is a common electrode of the piezoelectric element 30 and the upper electrode 33 is an individual electrode of the piezoelectric element 30, but this may be reversed for the convenience of the driver circuit 64 and wiring. That is, the lower electrode 31 may be an individual electrode and the upper electrode 33 may be a common electrode.
Next, the vibration film 20 is partially etched by photolithography and etching technology, and the flow path forming substrate 1 exposed from below the vibration film 20 is etched to form contact holes. Subsequently, a conductive film is formed on the flow path forming substrate 1 so as to fill this contact hole. Then, the conductive film is partially etched by photolithography and etching techniques to remove the conductive film from regions other than the contact holes. Thereby, the through electrode 37 is formed.

  Next, a conductive film is formed on the entire surface of the flow path forming substrate 1. For example, a metal film such as Al, Au, Ni, or Pt can be used for the conductive film. Next, the conductive film is partially etched by photolithography and etching techniques. Thereby, wiring (not shown) for drawing out the lower electrode 31 which is a common electrode to the surface of the flow path forming substrate 1 and wiring 35 for drawing out the upper electrode 33 of each piezoelectric element 30 to the surface of the flow path forming substrate 1. And form. As shown in FIG. 1, the wiring 35 is formed so as to be connected to the through electrode 37. Further, the wiring for drawing out the lower electrode 31 is formed so as to be connected to another through electrode 37 (not shown).

In the present embodiment, although not shown, a protective film may be formed so as to cover the piezoelectric element 30 before forming the wiring 35 and the like. The protective film is, for example, alumina (Al ₂ O ₃ ), and can be formed, for example, by sputtering, ALD (Atomic Layer Deposition), or MOCVD (Metal Organic CVD). Thus, when forming a protective film covering the piezoelectric element 30, the protective film is partially etched by photolithography and etching techniques to form contact holes on the lower electrode 31 and the upper electrode 33, respectively. The wiring 35 and the like may be formed so as to fill this contact hole.

  Next, as shown in FIG. 4B, the vibration film 20 is partially etched by photolithography and etching techniques, and an opening having the surface of the flow path forming substrate 1 as the bottom surface in a region facing the reservoir 45. Part 11 is formed. The subsequent steps (that is, the step of forming the pressure generating chamber 10) are performed after the sealing plate 40 is bonded to the flow path forming substrate 1. Therefore, the description will be given together with the joining process.

  Next, in the step of forming the nozzle plate 60, as shown in FIG. 2C, a substrate made of, for example, bulk silicon is prepared as the nozzle plate 60. The substrate is not limited to a silicon substrate, and may be a substrate made of a material other than silicon. Next, as shown in FIG. 3C, a driver circuit 64 for driving the piezoelectric element is formed on the surface of the nozzle plate 60. The driver circuit 64 is formed by a semiconductor process (that is, a film forming process, a photolithography process, an etching process, etc.). Then, as shown in FIG. 4C, the surface of the nozzle plate 60 is partially etched by photolithography and etching techniques to form a groove 61 in a region to be a nozzle opening. The groove 61 is formed avoiding the driver circuit 64. Next, the entire back surface of the nozzle plate 60 is ground by, for example, several hundred μm to open the bottom surface of the groove 61. As shown in FIG. 5B, the nozzle opening 62 is formed by this grinding, and the nozzle plate 60 is completed.

Next, in the step of joining the sealing plate 40 and the nozzle plate 60 to the flow path forming substrate 1 (that is, the joining step), as shown in FIG. 5A, the sealing plate 40 in which the reservoir 45 is formed. Is bonded to the surface of the flow path forming substrate 1 via an adhesive or the like (not shown). Here, the sealing plate 40 and the flow path forming substrate 1 are aligned so that the recess 42 is correctly overlapped with the piezoelectric element 30 and the reservoir 45 is correctly overlapped with the opening 11. And the surface of the sealing board 40 is joined to the surface of the flow path formation board | substrate 1 in the state aligned in this way. As a result, the piezoelectric element 30 is disposed and sealed in the recess 42, and the reservoir 45 is disposed to face the opening 11.
Note that the bonding between the sealing plate 40 and the flow path forming substrate 1 can be performed using an adhesive as described above, but the bonding method is not limited to this and other than the adhesive. Bonding may be performed by this method.

For example, when the sealing plate 40 is made of glass (SiO ₂ ) and the flow path forming substrate 1 is made of silicon, the above bonding may be performed by anodic bonding. Here, anodic bonding is one of the methods for bonding silicon and glass. Specifically, glass and silicon are brought into contact with each other, and both (that is, glass and silicon) are heated in this state. At the same time as softening the glass side, a high voltage is applied between the two with the silicon side as the anode, thereby joining them together. The heating temperature in anodic bonding is, for example, 300 to 500 ° C. The voltage applied between the two is, for example, 500 v to 1 kv.

  Next, as shown in FIG. 6A, the entire back surface of the flow path forming substrate 1 is ground by, for example, several hundred μm to expose one end of the through electrode 37. Then, as shown in FIG. 7A, the pressure generation chamber 10 is formed by partially etching the back surface of the flow path forming substrate 1 by photolithography and etching techniques. Here, for example, the vibration film 20 can be used as an etching stopper. In this case, the piezoelectric element 30 can be prevented from being damaged by etching.

  Next, in FIGS. 7A and 7B, the nozzle plate 60 in which the nozzle openings 62 are formed is bonded to the back surface of the flow path forming substrate 1 with an adhesive or the like. Here, the nozzle plate 60 and the flow path forming substrate 1 are arranged so that the nozzle opening 62 correctly overlaps the end of the pressure generating chamber 10 and the pad electrode formed in the driver circuit 64 correctly overlaps the through electrode 37. Align. Then, the surface of the nozzle plate 60 is bonded to the back surface of the flow path forming substrate 1 in such a state of alignment. As a result, the nozzle opening 62 communicates with the pressure generation chamber 10, and the wiring 35 for drawing out the upper electrode 33 and the wiring (not shown) for drawing out the lower electrode 31 are electrically connected to the driver circuit 64. Connected. Through the steps as described above, the ink jet recording head 100 shown in FIG. 1 is completed.

  As described above, according to the embodiment of the present invention, the pressure generating chamber 10 and the driver circuit 64 are arranged so as to overlap in the longitudinal direction (that is, the thickness direction) in a cross-sectional view. Can be reduced, and the size can be reduced. Further, when the ink jet recording head 100 is operated, the ink liquid flows in the pressure generating chamber 10, and in the driver circuit 64 formed in the nozzle plate 60, the heat generated by the circuit operation is taken away by the flowing ink liquid. easy. For this reason, the heat radiation from the driver circuit 64 is easy, and problems caused by heat can be reduced. Therefore, the reliability of the ink jet recording head 100 can be improved.

Further, according to the ink jet recording apparatus including such an ink jet recording head 100, it is possible to reduce the size and improve the reliability.
In this embodiment, the flow path forming substrate 1 corresponds to the “first substrate” of the present invention, and the back surface of the flow path forming substrate 1 corresponds to “one surface of the first substrate” of the present invention. The surface of the substrate 1 corresponds to “the other surface of the first substrate” of the present invention. The nozzle plate 60 corresponds to the “second substrate” of the present invention, and the sealing plate 40 corresponds to the “third substrate” of the present invention. The combination of the wiring 35 and the through electrode 37 corresponds to the “wiring” of the present invention, and the driver circuit 64 corresponds to the integrated circuit of the present invention.

  In the above-described embodiment, the case where the driver circuit 64 is formed on the surface of the nozzle plate 60 has been described. However, the formation position of the driver circuit 64 of the present invention is not limited to this. For example, as shown in FIG. 8, a driver circuit 64 may be formed from directly under the end of the pressure generating chamber 10 to the outside thereof. Even in such a configuration, the driver circuit 64 is on the surface of the nozzle plate 60 and in the region facing the vibration film 20 so that the pressure generation chamber 10 and the driver circuit 64 overlap in the longitudinal direction in a cross-sectional view. Therefore, the recording head 100 can be reduced in area and size.

Alternatively, for example, as illustrated in FIG. 9, a driver circuit 64 may be formed on the back surface of the nozzle plate 60 and in a region facing the vibration film 20 with the pressure generation chamber 10 interposed therebetween. In this case, the piezoelectric element 30 and the driver circuit 64 are connected via the wiring 35 and the like, the through electrode 37, the through electrode 38 that penetrates the nozzle plate 60, and the wiring 39 formed on the back surface of the nozzle plate 60. Electrically connected. Even in such a configuration, the pressure generating chamber 10 and the driver circuit 64 are arranged so as to overlap in the longitudinal direction in a cross-sectional view, so that the recording head 100 can be reduced in area and size. In addition, since the driver circuit 64 is cooled from the back side (that is, the surface opposite to the active surface) by the flow of the ink liquid, as in the above-described embodiment, heat radiation is easy, and problems caused by heat are reduced. can do.
In FIG. 9, the combination of the wirings 35 and 39 and the through electrodes 37 and 38 corresponds to the “wiring” of the present invention.

1 is a diagram illustrating a configuration example of an ink jet recording head 100 according to an embodiment. FIG. 2 is a diagram illustrating a method for manufacturing an ink jet recording head 100 (part 1). FIG. 2 is a diagram illustrating a method for manufacturing the ink jet recording head 100 (part 2). FIG. 3 is a diagram illustrating a method for manufacturing the ink jet recording head 100 (No. 3). FIG. 4 illustrates a method for manufacturing the ink jet recording head 100 (No. 4). FIG. 5 illustrates a method for manufacturing the ink jet recording head 100 (part 5). FIG. 6 illustrates a method for manufacturing the ink jet recording head 100 (No. 6). FIG. 3 is a diagram illustrating another configuration example of the ink jet recording head 100 (part 1). FIG. 2 is a diagram illustrating another configuration example of the ink jet recording head 100 (part 2).

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 Board | substrate, 10 Pressure generation chamber, 11 Opening part, 20 Vibration film, 30 Piezoelectric element, 31 Lower electrode, 32 Piezoelectric body, 33 Upper electrode, 35, 39 Wiring, 37, 38 Through electrode, 40 Sealing plate, 42 Driver Circuit, 45 reservoir, 42 recess, 60 nozzle plate, 62 nozzle opening, 100 ink jet recording head

Claims (8)

A pressure generating chamber that receives supply of ink liquid, a nozzle opening that communicates with the pressure generating chamber, a vibrating membrane facing the pressure generating chamber,
An ink jet recording head comprising: an integrated circuit formed in a region facing the vibration film across the pressure generating chamber of the substrate facing the pressure generating chamber. The substrate is
A first substrate on which the pressure generating chamber is formed;
A second substrate bonded to one surface of the first substrate,
The vibration film is formed on the other surface of the first substrate;
2. The ink jet recording head according to claim 1, wherein the integrated circuit is formed in a region facing the vibration film across the pressure generation chamber of the second substrate. The nozzle opening is formed in the second substrate;
3. The ink jet recording head according to claim 2, wherein the integrated circuit is formed so as to avoid the nozzle opening. A piezoelectric element formed on the other surface of the first substrate via the vibration film;
Wiring further connecting the piezoelectric element and the integrated circuit,
4. The ink jet recording head according to claim 2, wherein the wiring is formed through the first substrate. A third substrate bonded to the other surface of the first substrate;
5. The ink jet recording head according to claim 2, wherein a concave portion is formed in the third substrate, and the piezoelectric element is sealed in the concave portion. 6. . A reservoir communicating with the pressure generating chamber,
The ink jet recording head according to claim 5, wherein the reservoir is formed on the third substrate.   An ink jet recording apparatus comprising the ink jet recording head according to any one of claims 1 to 6. An ink jet recording head manufacturing method comprising: a pressure generating chamber that receives supply of ink liquid; a nozzle opening that communicates with the pressure generating chamber; and a vibration film that faces the pressure generating chamber.
A method of manufacturing an ink jet recording head, comprising: forming an integrated circuit in a region of the substrate facing the pressure generating chamber across the pressure generating chamber and facing the vibration film.

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