JP2009246572A - Surface acoustic wave sensor element and surface acoustic wave sensor - Google Patents

Surface acoustic wave sensor element and surface acoustic wave sensor Download PDF

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JP2009246572A
JP2009246572A JP2008088867A JP2008088867A JP2009246572A JP 2009246572 A JP2009246572 A JP 2009246572A JP 2008088867 A JP2008088867 A JP 2008088867A JP 2008088867 A JP2008088867 A JP 2008088867A JP 2009246572 A JP2009246572 A JP 2009246572A
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acoustic wave
surface acoustic
piezoelectric substrate
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Kunihito Yamanaka
國人 山中
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Miyazaki Epson Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a SAW sensor with high sensitivity and high resolution which is reduced in manufacturing cost by decreasing the number of components. <P>SOLUTION: A SAW sensor element 1 includes a piezoelectric substrate 2 having a thin plate portion 3a and a thick plate portion 3b in a length direction, a SAW resonator 5 for detection and a first SAW filter 6 formed on the thin plate portion, and a reference SAW resonator 7 and a second SAW filter 8 formed on the thick plate portion. A first oscillation circuit 22 is connected between the SAW resonator for detection and first SAW filter to oscillate at an oscillation frequency for detection, and a second oscillation circuit 23 is connected between the reference SAW resonator and second SAW filter to oscillate at a reference oscillation frequency; and waves thereof are passed through the first and second SAW filters to remove unnecessary signal components, and input to a frequency mixer 24 to detect the difference between and the sum of them. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

本発明は、圧電基板上に形成したIDT(すだれ状トランスデューサ)により励振される弾性表面波(SAW)を利用して、加速度、外力、変位等を検出測定するSAWセンサ及びそれに使用するためのSAWセンサ素子に関する。   The present invention uses a surface acoustic wave (SAW) excited by an IDT (interdigital transducer) formed on a piezoelectric substrate to detect and measure acceleration, external force, displacement, etc., and a SAW for use in the SAW sensor. The present invention relates to a sensor element.

従来、SAWを利用して加速度、外力又は変位を測定する様々なセンサが提案されている(特許文献1乃至3)。例えば、特許文献1記載の外力センサは、圧電材料からなる長板状のビームを片持ちに支持し、該ビームの表裏両面にそれぞれSAWを励振する送信電極及び受信電極と増幅器とからなる発振器を設けた構成を有する。前記ビームが外力の作用により撓むと、その表面に生じた歪みによりSAWの伝搬速度が変化して両発振器の発振周波数が変化するので、それら発振周波数の差をローパスフィルタで取り出して、外力の大きさを測定する。更に特許文献2記載の傾斜センサは、カンチレバーの両面に形成したSAW共振器の送信電極及び受信電極の電極パターンを互いに相似パターンとすることにより、両SAW共振器の温度特性の相違に起因する差周波数の温度ドリフトを抑えて計測精度の向上を図っている。   Conventionally, various sensors that measure acceleration, external force, or displacement using SAW have been proposed (Patent Documents 1 to 3). For example, an external force sensor described in Patent Document 1 supports a long plate-like beam made of a piezoelectric material in a cantilever manner, and includes an oscillator composed of a transmission electrode, a reception electrode, and an amplifier for exciting SAW on both the front and back surfaces of the beam. The configuration is provided. When the beam is bent by the action of an external force, the SAW propagation speed changes due to the distortion generated on the surface of the beam, and the oscillation frequency of both oscillators changes. Measure the thickness. Furthermore, the inclination sensor described in Patent Document 2 is different from the difference in temperature characteristics between the SAW resonators by making the electrode patterns of the transmitting electrode and the receiving electrode of the SAW resonator formed on both surfaces of the cantilever similar to each other. Measurement accuracy is improved by suppressing frequency drift of frequency.

また、特許文献3記載の外力センサは、同様に片持ちに支持したカンチレバーの表面にそれぞれ櫛形電極からなる送信部及び受信部を有するSAW共振器が配置されている。送信部及び受信部を前記カンチレバーの長さ方向に配置した実施例では、該レバーの長さ方向即ち上下の変位を検出でき、該レバーの長さ方向と垂直に即ち幅方向に配置した実施例では、ねじれ即ち幅方向の変位を検出することができる。更に、前記カンチレバーの表面に2つの平行に配置した受信部と共通の送信部とを設けた実施例では、各受信部の信号の和と差とから長さ方向の変位及びねじれ変位を同時に検出することができる。   Further, in the external force sensor described in Patent Document 3, SAW resonators each having a transmitting unit and a receiving unit made of comb-shaped electrodes are arranged on the surface of a cantilever supported in a cantilever manner. In the embodiment in which the transmitting unit and the receiving unit are arranged in the length direction of the cantilever, the length direction of the lever, that is, the vertical displacement can be detected, and the embodiment is arranged in the length direction of the lever, that is, in the width direction. Then, twist, that is, displacement in the width direction can be detected. Further, in the embodiment in which two parallel receiving units and a common transmitting unit are provided on the surface of the cantilever, the displacement in the length direction and the torsional displacement are simultaneously detected from the sum and difference of the signals of each receiving unit. can do.

更に、SAWを利用して圧力を測定する圧力センサ装置が知られている(例えば、特許文献4を参照)。この圧力センサ装置は、圧電基板の厚みを薄くした肉薄部に圧力検出用SAW素子を設け、かつそれ以外の肉厚部に参照用SAW素子を設け、両SAW素子の共振周波数の差分をとり、その変化により圧力を検出する。   Furthermore, a pressure sensor device that measures pressure using SAW is known (see, for example, Patent Document 4). In this pressure sensor device, a pressure detecting SAW element is provided in a thin part where the thickness of the piezoelectric substrate is reduced, and a reference SAW element is provided in the other thick part, and a difference between resonance frequencies of both SAW elements is obtained. The pressure is detected by the change.

特開平2−228530号公報JP-A-2-228530 特開平5−141969号公報JP-A-5-141969 特開平9−133691号公報Japanese Patent Laid-Open No. 9-133691 特再表WO2005/052533号公報Special reprint WO2005 / 052533

一般にSAWを利用したセンサは、SAW共振器から出力される周波数の変化を検出するので、出力される電圧の変化を検出するタイプのセンサに比して、測定対象の僅かな変動も高感度に検出し得る特徴を有する。高いセンサ感度を確保するためには、出力される信号の純度を高くする必要があり、そのためにバンドパスフィルタが使用されている。しかしながら、上述した従来のSAWを利用したセンサは、検出される2つの周波数を混合するミキサの後段に、SAW共振器を形成したカンチレバー状の圧電基板とは別個のバンドパスフィルタを接続している。その結果、部品点数が増加して製造コストが増大し、かつセンサ全体の構成が複雑になるという問題が生じる。   In general, a sensor using SAW detects a change in the frequency output from the SAW resonator, and therefore, even a slight change in the measurement object is highly sensitive compared to a sensor that detects a change in the output voltage. It has features that can be detected. In order to ensure high sensor sensitivity, it is necessary to increase the purity of the output signal, and a band-pass filter is used for this purpose. However, in the conventional sensor using the SAW described above, a bandpass filter separate from the cantilever-shaped piezoelectric substrate on which the SAW resonator is formed is connected to the subsequent stage of the mixer that mixes two detected frequencies. . As a result, there arises a problem that the number of parts increases, the manufacturing cost increases, and the configuration of the entire sensor becomes complicated.

また、高感度かつ高分解能のセンサを実現するためには、圧電基板のSAW共振器及び/又はそれからなる発振器と後段のバンドパスフィルタとをバランス良くマッチングさせることが必要である。しかしながら、従来のように圧電基板とバンドパスフィルタとを別個に構成した場合、例えば温度特性等において両者の個体差が大きくなり易く、センサ全体として性能にばらつきや低下を生じる等の不都合を生じる虞がある。   In order to realize a high-sensitivity and high-resolution sensor, it is necessary to match the SAW resonator of the piezoelectric substrate and / or the oscillator composed thereof with the subsequent band-pass filter in a balanced manner. However, when the piezoelectric substrate and the band-pass filter are configured separately as in the prior art, for example, the individual difference between the two tends to increase in the temperature characteristics and the like, and there is a possibility of causing inconveniences such as variations in the performance of the entire sensor and a decrease in performance. There is.

そこで本発明は、上述した従来の問題点に鑑みてなされたものであり、その目的は、部品点数を少なくして製造コストの増大を抑制でき、性能のばらつきが少なく、高感度かつ高分解能のSAWセンサを実現することにある。   Therefore, the present invention has been made in view of the above-described conventional problems, and the object thereof is to reduce the number of parts to suppress an increase in manufacturing cost, to reduce performance variation, and to have high sensitivity and high resolution. It is to realize a SAW sensor.

本発明の別の目的は、かかるSAWセンサを実現するのに適したSAWセンサ素子を提供することにある。   Another object of the present invention is to provide a SAW sensor element suitable for realizing such a SAW sensor.

本発明によれば、上記目的を達成するために、長さ方向に沿って薄板部と厚板部とを有する圧電基板、圧電基板の薄板部上に形成されてSAWを励振するための検出用IDT、圧電基板の厚板部上に形成されてSAWを励振するための基準用IDT、圧電基板上に形成されかつ検出用IDTの出力に接続する第1SAWフィルタ、及び圧電基板上に形成されかつ基準用IDTの出力に接続する第2SAWフィルタを備えるSAWセンサ素子と、SAWセンサ素子の検出用IDTと第1SAWフィルタとの間を接続する第1発振回路と、SAWセンサ素子の基準用IDTと第2SAWフィルタとの間を接続する第2発振回路と、SAWセンサ素子の第1SAWフィルタ及び第2SAWフィルタの各出力に接続した周波数混合器と、周波数混合器に接続した周波数検波器とを備えるSAWセンサが提供される。   According to the present invention, in order to achieve the above object, a piezoelectric substrate having a thin plate portion and a thick plate portion along the length direction, and a detection substrate for exciting SAW formed on the thin plate portion of the piezoelectric substrate. IDT, a reference IDT formed on the thick plate portion of the piezoelectric substrate for exciting SAW, a first SAW filter formed on the piezoelectric substrate and connected to the output of the detection IDT, and formed on the piezoelectric substrate A SAW sensor element having a second SAW filter connected to the output of the reference IDT, a first oscillation circuit connecting the detection IDT of the SAW sensor element and the first SAW filter, a reference IDT of the SAW sensor element, and the first IDT A second oscillation circuit for connecting between the two SAW filters, a frequency mixer connected to each output of the first SAW filter and the second SAW filter of the SAW sensor element, and a frequency mixer SAW sensor and a connected frequency detector is provided.

SAWを励振する検出用IDT及び基準用IDTは、例えばそれぞれ交差指電極対からなる入力用及び出力用の2つのIDTとその両側に配置した反射器とを有する2ポート型のSAW共振子若しくはSAWフィルタとして、又は1対の交差指電極対からなるIDTとその両側に配置した反射器とを有する1ポート型のSAW共振子として、又は、それぞれ交差指電極対からなる入力用及び出力用の2つのIDTを有するトランスバーサル型のSAWフィルタとして構成することができる。   The detection IDT and the reference IDT for exciting the SAW are, for example, a two-port SAW resonator or SAW having two input and output IDTs each composed of a pair of crossed finger electrodes and reflectors arranged on both sides thereof. As a filter or as a 1-port SAW resonator having an IDT composed of a pair of crossed finger electrodes and reflectors arranged on both sides thereof, or 2 for input and output each composed of a pair of crossed finger electrodes It can be configured as a transversal SAW filter having two IDTs.

外力等の負荷がSAWセンサ素子に作用したとき、それにより生じた薄板部表面の歪みによってSAWの伝搬速度が変化して、周波数混合器から取り出される検出側の発振周波数と基準側の発振周波数との差分及び和分が無負荷状態での周波数値から変動するので、これらのいずれか一方を周波数検波器で検出することにより、作用した外力等を測定することができる。その際に第1及び第2発振回路から出力される発振周波数は、それぞれ第1及び第2SAWフィルタによって、ノイズとなり得る余分な周波数成分がカットされ、所望範囲の周波数成分のみが後段の周波数混合器に入力するので、作用した外力等を高感度にかつ高分解能で検出することができる。   When a load such as an external force acts on the SAW sensor element, the propagation speed of the SAW changes due to the distortion of the surface of the thin plate portion, and the oscillation frequency on the detection side and the oscillation frequency on the reference side taken out from the frequency mixer Since the difference and the sum of fluctuate from the frequency value in the no-load state, the applied external force or the like can be measured by detecting either one of them with a frequency detector. At that time, the oscillation frequencies output from the first and second oscillation circuits are cut off by the first and second SAW filters, respectively, and extra frequency components that may become noise are cut, and only the frequency components in the desired range are the subsequent frequency mixers. Therefore, the applied external force or the like can be detected with high sensitivity and high resolution.

更に、検出用IDT及び基準用IDTと同じ圧電基板上に第1及び第2SAWフィルタが形成されているので、SAWセンサ全体として構成を簡単にしかつ部品点数を少なくすることができる。また、検出用IDT及び基準用IDTと第1及び第2SAWフィルタとは、従来の製造工程をそのまま利用して圧電基板上に同時に形成できるので、製造コストを低減でき、かつそれらの個体差による性能のばらつきを少なくすることができる。   Furthermore, since the first and second SAW filters are formed on the same piezoelectric substrate as the detection IDT and the reference IDT, the configuration of the entire SAW sensor can be simplified and the number of parts can be reduced. In addition, since the detection IDT, the reference IDT, and the first and second SAW filters can be simultaneously formed on the piezoelectric substrate using the conventional manufacturing process as they are, the manufacturing cost can be reduced and the performance due to individual differences between them can be reduced. The variation of the can be reduced.

このとき、第1SAWフィルタを検出用IDTと共に圧電基板の薄板部に設けると、その周波数特性は、温度変化や該薄板部に生じる歪み等の影響を受けて検出用IDTと同様にシフトなどするので、好都合である。特に検出用IDTと第1SAWフィルタとは、圧電基板の長さ方向に互いに平行に配置すると、薄板部の撓みにより生じる歪みが圧電基板の長さ方向に沿って略等しく作用するので、好都合である。   At this time, if the first SAW filter is provided in the thin plate portion of the piezoelectric substrate together with the detection IDT, the frequency characteristic is shifted in the same manner as the detection IDT due to the influence of temperature change, distortion generated in the thin plate portion, and the like. Convenient. Particularly, when the IDT for detection and the first SAW filter are arranged in parallel with each other in the length direction of the piezoelectric substrate, the distortion caused by the bending of the thin plate portion acts substantially equally along the length direction of the piezoelectric substrate. .

また、圧電基板の薄板部には検出用IDTのみを設けて、それ以外の圧電基板の領域に第1SAWフィルタを設けると、薄板部の面積を小さくできるので、SAWセンサ素子に作用する外力等が同じ大きさであっても、薄板部の単位面積当たりに受ける応力が大きくなる。その結果、検出側の発振周波数の変動量がより大きくなるので、SAWセンサをより高感度にすることができる。   In addition, if only the detection IDT is provided in the thin plate portion of the piezoelectric substrate and the first SAW filter is provided in the region of the other piezoelectric substrate, the area of the thin plate portion can be reduced, so that an external force acting on the SAW sensor element can be reduced. Even if it is the same size, the stress received per unit area of the thin plate portion is increased. As a result, the fluctuation amount of the oscillation frequency on the detection side becomes larger, so that the SAW sensor can be made more sensitive.

或る実施例では、第1発振回路及び第2発振回路の構成部品の全部又は一部がSAWセンサ素子の圧電基板上に形成される。これにより、SAWセンサを構成する部品点数をより少なくして構成全体をより簡単にし、製造コストをより低減することができる。   In some embodiments, all or some of the components of the first and second oscillator circuits are formed on the piezoelectric substrate of the SAW sensor element. As a result, the number of parts constituting the SAW sensor can be reduced, the entire configuration can be simplified, and the manufacturing cost can be further reduced.

別の実施例では、圧電基板をその長さ方向に沿って厚板部側の端部を自由端としかつ薄板部側の端部を剛固に固定して、SAWセンサ素子を片持ちに支持する。これにより、SAWセンサ素子に外力や加速度が作用すると、その大きさ及び向きに対応して厚板部側の端部が変位して薄板部が撓み、該薄板部表面におけるSAWの伝搬速度が変化するので、検出側の発振周波数と基準側発振周波数との差分又は和分から加速度、外力又は変位を測定するためのセンサを構成することができる。   In another embodiment, the SAW sensor element is supported in a cantilever manner, with the end on the thick plate portion side being a free end and the end on the thin plate portion side being rigidly fixed along the length direction of the piezoelectric substrate. To do. As a result, when an external force or acceleration is applied to the SAW sensor element, the end on the thick plate portion side is displaced corresponding to the size and direction, the thin plate portion is bent, and the SAW propagation speed on the surface of the thin plate portion changes. Therefore, it is possible to configure a sensor for measuring acceleration, external force, or displacement from the difference or sum of the detection-side oscillation frequency and the reference-side oscillation frequency.

更に別の実施例では、周波数混合器と周波数検波器との間に接続したバンドパスフィルタを更に備える。これにより、周波数混合器から出力される前記発振周波数の差分又は和分を選択的に取り出すことができる。   In yet another embodiment, a bandpass filter connected between the frequency mixer and the frequency detector is further provided. As a result, the difference or sum of the oscillation frequencies output from the frequency mixer can be selectively extracted.

本発明の別の側面によれば、長さ方向に沿って薄板部と厚板部とを有する圧電基板と、圧電基板の薄板部上に形成されてSAWを励振するための検出用IDTと、圧電基板の厚板部上に形成されてSAWを励振するための基準用IDTと、圧電基板上に形成されかつ検出用IDTの出力に接続する第1SAWフィルタと、圧電基板上に形成されかつ基準用IDTの出力に接続する第2SAWフィルタとを備えるSAWセンサ素子が提供される。   According to another aspect of the present invention, a piezoelectric substrate having a thin plate portion and a thick plate portion along the length direction, a detection IDT formed on the thin plate portion of the piezoelectric substrate for exciting the SAW, A reference IDT formed on the thick plate portion of the piezoelectric substrate for exciting the SAW, a first SAW filter formed on the piezoelectric substrate and connected to the output of the detection IDT, and formed on the piezoelectric substrate and the reference A SAW sensor element comprising a second SAW filter connected to the output of the industrial IDT is provided.

このSAWセンサ素子は、第1及び第2SAWフィルタが、それぞれ検出用IDT及び基準用IDTの共振周波数に基づいて発振される発振周波数からノイズとなり得る余分な周波数成分をカットし、所望帯域の周波数成分のみを出力させるので、高感度かつ高分解能のSAWセンサを実現することができる。1つの圧電基板上に検出用IDT及び基準用IDTと第1及び第2SAWフィルタとが形成されているので、これを用いてSAWセンサを構成したとき、センサ全体の構成を簡単にしかつその部品点数を少なくすることができる。   In this SAW sensor element, the first and second SAW filters cut the unnecessary frequency components that can become noise from the oscillation frequency oscillated based on the resonance frequencies of the detection IDT and the reference IDT, respectively, and the frequency components of the desired band Therefore, a high-sensitivity and high-resolution SAW sensor can be realized. Since the detection IDT, the reference IDT, and the first and second SAW filters are formed on one piezoelectric substrate, when the SAW sensor is configured using the IDT, the configuration of the entire sensor is simplified and the number of parts is increased. Can be reduced.

或る実施例では、SAWセンサ素子が、検出用IDTと第1SAWフィルタとの間を接続する第1発振回路の構成部品の全部又は一部と、基準用IDTと第2SAWフィルタとの間を接続する第2発振回路の構成部品の全部又は一部とを圧電基板上に備える。これを用いて構成されるSAWセンサは、その部品点数をより少なくし、製造コストをより低減することができる。また、これら第1発振回路及び第2発振回路の構成部品を含めて、圧電基板上の構成要素及び配線は、従来の製造工程をそのまま利用して形成できるので、より好都合である。   In one embodiment, the SAW sensor element connects between all or part of the components of the first oscillation circuit that connects between the detection IDT and the first SAW filter, and between the reference IDT and the second SAW filter. All or some of the components of the second oscillation circuit are provided on the piezoelectric substrate. The SAW sensor configured using this can reduce the number of parts and reduce the manufacturing cost. Moreover, since the components and wiring on the piezoelectric substrate including the components of the first oscillation circuit and the second oscillation circuit can be formed using the conventional manufacturing process as they are, it is more convenient.

別の実施例では、第1SAWフィルタ及び第2SAWフィルタの出力に接続されるバンドパスフィルタの構成部品の一部を圧電基板上に備える。これを用いて構成されるSAWセンサは、その部品点数を更に少なくし、製造コストを更に低減することができる。   In another embodiment, some of the components of the bandpass filter connected to the outputs of the first SAW filter and the second SAW filter are provided on the piezoelectric substrate. The SAW sensor configured using this can further reduce the number of parts and further reduce the manufacturing cost.

以下に、添付図面を参照しつつ、本発明の好適な実施例を詳細に説明する。各図において、同一又は類似の構成要素には、同一又は類似の参照符号を付して表示する。   Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. In each drawing, the same or similar components are denoted by the same or similar reference numerals.

図1(A)、(B)は、本発明によるSAWセンサ素子の第1実施例の構成を概略的に示している。本実施例のSAWセンサ素子1は、所定の長さ及び幅を有する矩形の水晶からなる圧電基板2を有する。圧電基板2は、長さ方向に沿って図中左側の長さ方向端部2a寄りにエッチング等で下面に凹部を設けた薄板部3aと、それから右側の長さ方向端部2bまで延長する厚板部3bとを有する。圧電基板2は、例えばリチウムタンタレート、リチウムナイオベート等の水晶以外の公知の圧電材料で形成することができる。SAWセンサ素子1を用いるSAWセンサが加速度、外力又は変位を測定するセンサである場合、圧電基板2は、一方の長さ方向端部2aを固定端として支持部4に剛固に固定し、かつ他方の長さ方向端部2bを自由端として、片持ちに支持する。   1A and 1B schematically show the configuration of a first embodiment of a SAW sensor element according to the present invention. The SAW sensor element 1 of the present embodiment has a piezoelectric substrate 2 made of a rectangular crystal having a predetermined length and width. The piezoelectric substrate 2 includes a thin plate portion 3a having a recess formed on the lower surface thereof by etching or the like near the lengthwise end portion 2a on the left side in the drawing along the length direction, and a thickness extending to the right lengthwise end portion 2b. And a plate portion 3b. The piezoelectric substrate 2 can be formed of a known piezoelectric material other than quartz such as lithium tantalate and lithium niobate. When the SAW sensor using the SAW sensor element 1 is a sensor that measures acceleration, external force, or displacement, the piezoelectric substrate 2 is rigidly fixed to the support portion 4 with one lengthwise end portion 2a as a fixed end, and The other end 2b in the length direction is supported as a free end.

圧電基板2の上面には、薄板部3aの領域に検出用SAW共振子5と第1SAWフィルタ6とが形成され、厚板部3bの領域に基準用SAW共振子7と第2SAWフィルタ8とが形成されている。検出用SAW共振子5は2ポート型で、SAWの伝搬方向に沿って各1対の交差指電極9a,9b,10a,10bからなる入力側IDT9及び出力側IDT10と、それらの両側に配置された各1個の反射器11,11とを有する。第1SAWフィルタ6は縦二重モードで、SAWの伝搬方向に沿って各1対の交差指電極12a,12b,13a,13bからなる入力側IDT12及び出力側IDT13と、それらの両側に配置された各1個の反射器14,14とを有する。本実施例の検出用SAW共振子5と第1SAWフィルタ6とは、それぞれSAWの伝搬方向を圧電基板2の長さ方向と平行に、かつ互いに並列に配置されている。   On the upper surface of the piezoelectric substrate 2, the detection SAW resonator 5 and the first SAW filter 6 are formed in the region of the thin plate portion 3a, and the reference SAW resonator 7 and the second SAW filter 8 are formed in the region of the thick plate portion 3b. Is formed. The detection SAW resonator 5 is a two-port type, and is disposed on both sides of the input side IDT 9 and the output side IDT 10 each consisting of a pair of cross-finger electrodes 9a, 9b, 10a, 10b along the SAW propagation direction. And one reflector 11, 11. The first SAW filter 6 is in the vertical double mode, and is arranged on both sides of the input side IDT 12 and the output side IDT 13 each consisting of a pair of crossed finger electrodes 12a, 12b, 13a, 13b along the SAW propagation direction. Each has one reflector 14,14. The detection SAW resonator 5 and the first SAW filter 6 of the present embodiment are arranged in parallel with each other so that the SAW propagation direction is parallel to the length direction of the piezoelectric substrate 2.

第1SAWフィルタ6の通過帯域は、検出用SAW共振子5の共振周波数が確実に含まれるように設定する。或る実施例では、第1SAWフィルタ6の中心周波数を検出用SAW共振子5の共振周波数と一致させることができる。これは、例えば基準用SAW共振子7の入力側及び出力側IDT9,10の電極ピッチと第1SAWフィルタ6の入力側及び出力側IDT12,13の電極ピッチとを同じにすることにより実現される。   The pass band of the first SAW filter 6 is set so that the resonance frequency of the detection SAW resonator 5 is surely included. In an embodiment, the center frequency of the first SAW filter 6 can be matched with the resonance frequency of the detection SAW resonator 5. This is realized, for example, by making the electrode pitch of the input side and output side IDTs 9 and 10 of the reference SAW resonator 7 and the electrode pitch of the input side and output side IDTs 12 and 13 of the first SAW filter 6 the same.

同様に、基準用SAW共振子7は2ポート型で、SAWの伝搬方向に沿って各1対の交差指電極15a,15b,16a,16bからなる入力側IDT15及び出力側IDT16と、それらの両側に配置された各1個の反射器17,17とを有する。第2SAWフィルタ8は縦二重モードで、SAWの伝搬方向に沿って各1対の交差指電極18a,18b,19a,19bからなる入力側IDT18及び出力側IDT19と、それらの両側に配置された各1個の反射器20,20とを有する。本実施例の基準用SAW共振子7と第2SAWフィルタ8とは、それぞれSAWの伝搬方向を圧電基板2の長さ方向と平行に、かつ互いに並列に配置されている。   Similarly, the reference SAW resonator 7 is a two-port type, and includes an input-side IDT 15 and an output-side IDT 16 each consisting of a pair of cross finger electrodes 15a, 15b, 16a, 16b along the SAW propagation direction, and both sides thereof. Each having one reflector 17, 17. The second SAW filter 8 is in the vertical double mode, and is arranged on both sides of the input IDT 18 and the output IDT 19 each consisting of a pair of crossed finger electrodes 18a, 18b, 19a, 19b along the SAW propagation direction. Each has one reflector 20,20. The reference SAW resonator 7 and the second SAW filter 8 of the present embodiment are arranged in parallel with each other so that the SAW propagation direction is parallel to the length direction of the piezoelectric substrate 2.

第2SAWフィルタ8の通過帯域は、基準用SAW共振子7の共振周波数が確実に含まれるように設定する。或る実施例では、第2SAWフィルタ8の中心周波数を基準用SAW共振子7の共振周波数と一致させることができる。これは、同様に基準用SAW共振子7の入力側及び出力側IDT15,16の電極ピッチと第2SAWフィルタ8の入力側及び出力側IDT18,19の電極ピッチとを同じにすることにより実現される。   The pass band of the second SAW filter 8 is set so that the resonance frequency of the reference SAW resonator 7 is surely included. In an embodiment, the center frequency of the second SAW filter 8 can be matched with the resonance frequency of the reference SAW resonator 7. This is similarly realized by making the electrode pitches of the input side and output side IDTs 15 and 16 of the reference SAW resonator 7 and the electrode pitches of the input side and output side IDTs 18 and 19 of the second SAW filter 8 the same. .

図2は、図1のSAWセンサ素子1を用いたSAWセンサ21の構成を示している。SAWセンサ21は、SAWセンサ素子1に加えて、検出用SAW共振子5と第1SAWフィルタ6との間に接続された第1発振回路22と、基準用SAW共振子7と第2SAWフィルタ8との間に接続された第2発振回路23とを有する。前記第1及び第2SAWフィルタの各出力端子6a,8aは周波数混合器24に接続され、その出力は周波数検波器25に接続されている。周波数検波器25は、例えば周波数カウンタで構成される。   FIG. 2 shows a configuration of a SAW sensor 21 using the SAW sensor element 1 of FIG. In addition to the SAW sensor element 1, the SAW sensor 21 includes a first oscillation circuit 22 connected between the detection SAW resonator 5 and the first SAW filter 6, a reference SAW resonator 7 and a second SAW filter 8. And a second oscillation circuit 23 connected between the two. The output terminals 6 a and 8 a of the first and second SAW filters are connected to the frequency mixer 24, and the output thereof is connected to the frequency detector 25. The frequency detector 25 is composed of, for example, a frequency counter.

第1発振回路22は、例えば前記検出用SAW共振子の出力用IDT10に接続された増幅器と位相器とDCカット用キャパシタからなり、該位相器の出力が前記検出用SAW共振子の入力用IDT9に帰還させる帰還回路で構成されている。第1発振回路22は、検出用SAW共振子5の共振周波数に基づいて所定の検出周波数fs を発振させて出力する。   The first oscillation circuit 22 includes, for example, an amplifier connected to the output IDT 10 of the detection SAW resonator, a phase shifter, and a DC cut capacitor, and the output of the phase shifter is an IDT 9 for input of the detection SAW resonator. It is composed of a feedback circuit that feeds back to. The first oscillation circuit 22 oscillates and outputs a predetermined detection frequency fs based on the resonance frequency of the detection SAW resonator 5.

同様に、第2発振回路23は、例えば前記基準用SAW共振子の出力用IDT16に接続された増幅器と位相器とDCカット用キャパシタからなり、該位相器の出力が前記検出用SAW共振子の入力用IDT15に帰還させる帰還回路で構成されている。第2発振回路23は、基準用SAW共振子7の共振周波数に基づいて所定の基準周波数fr を発振させて出力する。   Similarly, the second oscillation circuit 23 includes, for example, an amplifier connected to the output IDT 16 of the reference SAW resonator, a phase shifter, and a DC cut capacitor, and the output of the phase shifter is the output of the detection SAW resonator. It is composed of a feedback circuit that feeds back to the input IDT 15. The second oscillation circuit 23 oscillates and outputs a predetermined reference frequency fr based on the resonance frequency of the reference SAW resonator 7.

第1発振回路22から出力された発振周波数fs は、第1SAWフィルタ6によりノイズとなり得る余分な周波数成分をカットし、所望範囲の周波数成分を通過させて周波数混合器24に出力する。同様に、第2発振回路23から出力された発振周波数fr は、第2SAWフィルタ8によりノイズとなり得る余分な周波数成分をカットし、所望範囲の周波数成分を通過させて前記周波数混合器に出力する。周波数混合器24は、入力した2つの発振周波数fs ,fr の差分(Δf=fs −fr )と和分(fs +fr )とを取り出し、周波数検波部25に出力する。前記発振周波数の差分及び和分は、周波数混合器24と周波数検波部25との間にローパスフィルタ又はハイパスフィルタを挿入することにより、選択的に取り出すことができる。   The oscillation frequency fs output from the first oscillation circuit 22 cuts an extra frequency component that may become noise by the first SAW filter 6, passes the frequency component in a desired range, and outputs it to the frequency mixer 24. Similarly, the oscillation frequency fr output from the second oscillation circuit 23 cuts an extra frequency component that may become noise by the second SAW filter 8, passes the frequency component in a desired range, and outputs it to the frequency mixer. The frequency mixer 24 extracts the difference (Δf = fs−fr) and the sum (fs + fr) between the two input oscillation frequencies fs and fr and outputs them to the frequency detector 25. The difference and sum of the oscillation frequencies can be selectively extracted by inserting a low-pass filter or a high-pass filter between the frequency mixer 24 and the frequency detector 25.

SAWセンサ21は、上述したようにSAWセンサ素子1を一方の長さ方向端部2aで支持部4に剛固に固定して片持ちに支持した場合、次のように動作する。SAWセンサ素子1は、加速度や外力が作用すると、長さ方向端部2aを支点として、自由端の長さ方向端部2bが、図1(B)に矢印26で示すように圧電基板2の表面に対して垂直方向に変位する。   The SAW sensor 21 operates as follows when the SAW sensor element 1 is rigidly fixed to the support portion 4 at one end 2a in the longitudinal direction and supported in a cantilever manner as described above. When acceleration or external force is applied to the SAW sensor element 1, the longitudinal end 2b of the free end of the piezoelectric substrate 2 as shown by an arrow 26 in FIG. Displaces perpendicularly to the surface.

SAWセンサ素子1に加速度又は外力が全く作用せず、長さ方向端部2bが変位していない無負荷状態において、検出側の発振周波数fs と基準側の発振周波数fr とを同一に設定することができる。この場合、発振周波数fs ,fr の差分Δfは0である。別の実施例では、発振周波数fs ,fr を異なる値に設定することができる。   In a no-load state in which no acceleration or external force acts on the SAW sensor element 1 and the lengthwise end 2b is not displaced, the oscillation frequency fs on the detection side and the oscillation frequency fr on the reference side are set to be the same. Can do. In this case, the difference Δf between the oscillation frequencies fs and fr is zero. In another embodiment, the oscillation frequencies fs and fr can be set to different values.

SAWセンサ素子1に加速度又は外力が作用して長さ方向端部2bが変位すると、圧電基板2の薄板部3aが撓み、その上面に撓みの向きによって引張歪み又は圧縮歪みが発生する。これにより、薄板部3a上面におけるSAWの伝搬速度が変化し、検出側の第1発振回路22からの発振周波数が増加又は減少する。他方、厚板部3bは、長さ方向端部2bが変位しても撓まないので、基準側の第2発振回路23からの発振周波数fr は変動しない。従って、前記SAWセンサ素子に作用した加速度又は外力の大きさを、発振周波数fs ,fr の差分又は和分として高感度に検出することができる。   When acceleration or an external force acts on the SAW sensor element 1 and the longitudinal end 2b is displaced, the thin plate portion 3a of the piezoelectric substrate 2 bends, and tensile strain or compression strain is generated on the upper surface depending on the direction of the bend. As a result, the SAW propagation speed on the upper surface of the thin plate portion 3a changes, and the oscillation frequency from the first oscillation circuit 22 on the detection side increases or decreases. On the other hand, since the thick plate portion 3b does not bend even if the lengthwise end portion 2b is displaced, the oscillation frequency fr from the second oscillation circuit 23 on the reference side does not fluctuate. Therefore, the magnitude of the acceleration or external force acting on the SAW sensor element can be detected with high sensitivity as the difference or sum of the oscillation frequencies fs and fr.

本実施例では、検出用SAW共振子5及び基準用SAW共振子7を形成した1つの圧電基板2上に第1及び第2SAWフィルタ6,8を形成することにより、SAWセンサを構成する部品点数を少なくでき、かつそれらを同時に従来の製造工程をそのまま利用して形成できるので、製造コストを低く抑制することができる。   In this embodiment, the first and second SAW filters 6 and 8 are formed on one piezoelectric substrate 2 on which the detection SAW resonator 5 and the reference SAW resonator 7 are formed, so that the number of components constituting the SAW sensor is increased. And can be formed using the conventional manufacturing process as it is, and the manufacturing cost can be reduced.

更に本実施例では、第1SAWフィルタ6が検出用SAW共振子5と同じ薄板部3aに設けられるので、その周波数範囲は温度変化や該薄板部の歪みに応じて、検出用SAW共振子5と同様に変化する。従って、それらを別個に設けた場合に比して性能のばらつきを少なくすることができ、第1SAWフィルタ6を比較的狭帯域に設定しても、その周波数範囲に検出側の発振周波数fs が確実に含まれるようにできるので、より高性能で高感度なSAWセンサが得られる。   Furthermore, in the present embodiment, the first SAW filter 6 is provided in the same thin plate portion 3a as the detection SAW resonator 5, so that the frequency range thereof is the same as that of the detection SAW resonator 5 in accordance with the temperature change and distortion of the thin plate portion. It changes as well. Therefore, the variation in performance can be reduced as compared with the case where they are provided separately, and even if the first SAW filter 6 is set to a relatively narrow band, the oscillation frequency fs on the detection side is surely in that frequency range. Therefore, a SAW sensor with higher performance and higher sensitivity can be obtained.

図3は、本実施例のSAWセンサ21の周波数特性を示している。同図において、実線は、本実施例において周波数検波部25から出力された信号を電圧に変換して表示したものである。更に同図には、比較例として、本実施例のSAWセンサ素子1から第1及び第2SAWフィルタ6,8を省略した場合の出力信号を破線で示す。同図から、本実施例では、中心周波数付近の狭い範囲以外の周波数領域に含まれるノイズ成分を有効に除去できることが分かる。   FIG. 3 shows the frequency characteristics of the SAW sensor 21 of this embodiment. In the figure, the solid line represents the signal output from the frequency detector 25 in this embodiment after converting it into a voltage. Furthermore, in the same figure, as a comparative example, an output signal when the first and second SAW filters 6 and 8 are omitted from the SAW sensor element 1 of the present embodiment is indicated by a broken line. From this figure, it can be seen that in this embodiment, noise components included in a frequency region other than a narrow range near the center frequency can be effectively removed.

また別の実施例では、検出用SAW共振子5及び基準用SAW共振子7をそれぞれSAWフィルタで構成することができる。この場合、これらの検出用及び基準用SAWフィルタは位相器として使用し、それぞれ所定の発振周波数fs ,fr を発振できるように第1及び第2発振回路22,23を構成する。   In another embodiment, each of the detection SAW resonator 5 and the reference SAW resonator 7 can be composed of SAW filters. In this case, these detection and reference SAW filters are used as phase shifters, and the first and second oscillation circuits 22 and 23 are configured so as to be able to oscillate predetermined oscillation frequencies fs and fr, respectively.

図4(A)、(B)は、第1実施例の変形例の構成を概略的に示している。本実施例は、第1及び第2発振回路22,23の一部を構成するDCカット用キャパシタ27,28を圧電基板1上に形成した点において、図1の構成と異なる。これにより、SAWセンサを構成する部品点数をより少なくし、製造コストをより低く抑制することができる。また、SAWセンサ素子1は、圧電基板上に各構成要素及び配線を同時に従来の製造工程をそのまま利用して形成できるので、より好都合である。   4A and 4B schematically show the configuration of a modification of the first embodiment. This embodiment is different from the configuration of FIG. 1 in that DC cut capacitors 27 and 28 constituting a part of the first and second oscillation circuits 22 and 23 are formed on the piezoelectric substrate 1. Thereby, the number of parts which comprise a SAW sensor can be decreased, and manufacturing cost can be suppressed lower. Further, the SAW sensor element 1 is more convenient because each component and wiring can be simultaneously formed on the piezoelectric substrate by using a conventional manufacturing process as it is.

更に別の実施例では、DCカット用キャパシタ27,28だけでなく、第1及び第2発振回路22,23を構成する他の全ての構成部品を圧電基板2上に形成することができる。これにより、更に部品点数を少なくしかつ製造コストを低減させることができる。   In still another embodiment, not only the DC cut capacitors 27 and 28 but also all other components constituting the first and second oscillation circuits 22 and 23 can be formed on the piezoelectric substrate 2. Thereby, the number of parts can be further reduced and the manufacturing cost can be reduced.

図5(A)、(B)図は、第1実施例の別の変形例の構成を概略的に示している。本実施例は、図2のSAWセンサ21において周波数混合器25の出力から発振周波数の和分を除去するためのローパスフィルタの一部を構成するキャパシタ29を圧電基板1上に形成した点において、図1の構成と異なる。この実施例では、キャパシタ29以外の前記ローパスフィルタを構成するインダクタ等の部品30が、SAWセンサ素子1とは別個の構成要素としてキャパシタ29と周波数混合器24との間に接続され、かつその出力30aが周波数検波器25に接続されている。これにより、同様にSAWセンサを構成する部品点数をより少なくし、製造コストをより低く抑制することができる。   FIGS. 5A and 5B schematically show the configuration of another modification of the first embodiment. In this embodiment, in the SAW sensor 21 of FIG. 2, a capacitor 29 constituting a part of a low-pass filter for removing the sum of the oscillation frequency from the output of the frequency mixer 25 is formed on the piezoelectric substrate 1. Different from the configuration of FIG. In this embodiment, a component 30 such as an inductor constituting the low-pass filter other than the capacitor 29 is connected between the capacitor 29 and the frequency mixer 24 as a separate component from the SAW sensor element 1 and its output. 30 a is connected to the frequency detector 25. As a result, the number of parts constituting the SAW sensor can be reduced, and the manufacturing cost can be further reduced.

図6(A)、(B)図は、本発明によるSAWセンサ素子の第2実施例の構成を概略的に示している。第2実施例のSAWセンサ素子31は、圧電基板32が第1実施例の圧電基板2よりも細長く形成され、その上面には薄板部33aの領域に検出用SAW共振子5のみが形成され、それと固定端である図中左側の長さ方向端部32aとの間の厚板部分に第1SAWフィルタ6が形成されている点において、第1実施例と異なる。検出用SAW共振子5と第1SAWフィルタ6とは、圧電基板32の長さ方向に沿って、かつSAWの伝搬方向を圧電基板32の長さ方向と平行に配置されている。   FIGS. 6A and 6B schematically show the configuration of a second embodiment of the SAW sensor element according to the present invention. In the SAW sensor element 31 of the second embodiment, the piezoelectric substrate 32 is formed to be longer than the piezoelectric substrate 2 of the first embodiment, and only the detection SAW resonator 5 is formed on the upper surface thereof in the region of the thin plate portion 33a. This is different from the first embodiment in that the first SAW filter 6 is formed in the thick plate portion between the fixed end and the lengthwise end portion 32a on the left side in the drawing. The detection SAW resonator 5 and the first SAW filter 6 are arranged along the length direction of the piezoelectric substrate 32 and the SAW propagation direction is parallel to the length direction of the piezoelectric substrate 32.

更に、本実施例では、自由端である図中右側の長さ方向端部32bとの間の厚板部33bの領域に基準用SAW共振子7と第2SAWフィルタ8とが、圧電基板32の長さ方向に沿って形成されている点において、第1実施例と異なる。基準用SAW共振子7と第2SAWフィルタ8とは、同様にSAWの伝搬方向を圧電基板2の長さ方向と平行に配置されている。   Furthermore, in this embodiment, the reference SAW resonator 7 and the second SAW filter 8 are disposed on the piezoelectric substrate 32 in the region of the thick plate portion 33b between the free end and the lengthwise end portion 32b on the right side in the drawing. It differs from the first embodiment in that it is formed along the length direction. Similarly, the reference SAW resonator 7 and the second SAW filter 8 are arranged such that the SAW propagation direction is parallel to the length direction of the piezoelectric substrate 2.

本実施例では、薄板部33に検出用SAW共振子5のみが設けられるので、その面積を小さくすることができる。これにより、SAWセンサ素子31に作用する外力が同じ大きさであっても、薄板部32aが単位面積当たりに受ける応力が大きくなるので、周波数の変動量がより大きくなる。その結果、より高感度なSAWセンサが得られる。   In the present embodiment, since only the detection SAW resonator 5 is provided on the thin plate portion 33, the area thereof can be reduced. Thereby, even if the external force acting on the SAW sensor element 31 has the same magnitude, the stress applied to the thin plate portion 32a per unit area is increased, so that the frequency fluctuation amount is further increased. As a result, a more sensitive SAW sensor can be obtained.

また、本発明は、上記各実施例と異なるタイプのSAW素子を第1実施例の検出用SAW共振子5及び基準用SAW共振子7に代えて用いることができる。   In the present invention, a SAW element of a different type from the above embodiments can be used in place of the detection SAW resonator 5 and the reference SAW resonator 7 of the first embodiment.

図7(A)、(B)図は、本発明によるSAWセンサ素子の第3実施例の構成を概略的に示している。第3実施例のSAWセンサ素子41は、第1実施例と同じ圧電基板2を有するが、薄板部3aの検出用SAW共振子5及び厚板部3bの基準用SAW共振子7が、それぞれトランスバーサル型SAWフィルタ42,43で構成されている点において、第1実施例と異なる。検出用SAWフィルタ42は、SAWの伝搬方向に沿って各1対の交差指電極からなる入力側IDT44及び出力側IDT45と、その間に配置された遮蔽電極46とを備える。基準用SAWフィルタ43は、SAWの伝搬方向に沿って各1対の交差指電極からなる入力側IDT47及び出力側IDT48と、その間に配置された遮蔽電極49とを備える。   FIGS. 7A and 7B schematically show the structure of a third embodiment of the SAW sensor element according to the present invention. The SAW sensor element 41 of the third embodiment has the same piezoelectric substrate 2 as that of the first embodiment, but the detection SAW resonator 5 of the thin plate portion 3a and the reference SAW resonator 7 of the thick plate portion 3b are respectively transformers. The second embodiment is different from the first embodiment in that it is composed of Versal type SAW filters 42 and 43. The detection SAW filter 42 includes an input-side IDT 44 and an output-side IDT 45 each including a pair of crossed finger electrodes along the SAW propagation direction, and a shielding electrode 46 disposed therebetween. The reference SAW filter 43 includes an input-side IDT 47 and an output-side IDT 48 each including a pair of cross-finger electrodes along the SAW propagation direction, and a shielding electrode 49 disposed therebetween.

図8(A)、(B)図は、本発明によるSAWセンサ素子の第4実施例の構成を概略的に示している。第4実施例のSAWセンサ素子51は、第1実施例と同じ圧電基板2を有するが、薄板部3aの検出用SAW共振子5及び厚板部3bの基準用SAW共振子7が、それぞれ1ポート型SAW共振子52,53で構成されている点において、第1実施例と異なる。検出用SAW共振子52は、SAWの伝搬方向に沿って1対の交差指電極からなるIDT54とその両側に配置された反射器55,55とを備える。基準用SAW共振子53は、SAWの伝搬方向に沿って1対の交差指電極からなるIDT56とその両側に配置された反射器57,57とを備える。   FIGS. 8A and 8B schematically show the structure of a fourth embodiment of the SAW sensor element according to the present invention. The SAW sensor element 51 of the fourth embodiment has the same piezoelectric substrate 2 as that of the first embodiment, but the detection SAW resonator 5 of the thin plate portion 3a and the reference SAW resonator 7 of the thick plate portion 3b are each 1 The second embodiment is different from the first embodiment in that the port SAW resonators 52 and 53 are configured. The detection SAW resonator 52 includes an IDT 54 composed of a pair of cross-finger electrodes along the SAW propagation direction, and reflectors 55 and 55 disposed on both sides thereof. The reference SAW resonator 53 includes an IDT 56 composed of a pair of cross finger electrodes along the SAW propagation direction, and reflectors 57 and 57 disposed on both sides thereof.

本発明は、上記実施例に限定されるものでなく、その技術的範囲内で様々な変形又は変更を加えて実施することができる。例えば、本発明は、特許文献4に記載されるような圧力センサにも同様に適用することができる。   The present invention is not limited to the above embodiments, and can be implemented with various modifications or changes within the technical scope thereof. For example, the present invention can be similarly applied to a pressure sensor as described in Patent Document 4.

(A)図は本発明によるSAWセンサ素子の第1実施例の概略平面図、(B)図はその側面図。(A) is a schematic plan view of a first embodiment of a SAW sensor element according to the present invention, and (B) is a side view thereof. 第1実施例のSAWセンサ素子を用いた本発明によるSAWセンサのブロック図。The block diagram of the SAW sensor by this invention using the SAW sensor element of 1st Example. 図2のSAWセンサの周波数特性を示す線図。The diagram which shows the frequency characteristic of the SAW sensor of FIG. (A)図は第1実施例の変形例を示す概略平面図、(B)図はその側面図。(A) is a schematic plan view showing a modification of the first embodiment, and (B) is a side view thereof. (A)図は第1実施例の別の変形例を示す概略平面図、(B)図はその側面図。(A) is a schematic plan view showing another modification of the first embodiment, and (B) is a side view thereof. (A)図は本発明によるSAWセンサ素子の第2実施例の概略平面図、(B)図はその側面図。(A) is a schematic plan view of a second embodiment of a SAW sensor element according to the present invention, and (B) is a side view thereof. (A)図は本発明によるSAWセンサ素子の第3実施例の概略平面図、(B)図はその側面図。(A) is a schematic plan view of a third embodiment of a SAW sensor element according to the present invention, and (B) is a side view thereof. (A)図は本発明によるSAWセンサ素子の第4実施例の概略平面図、(B)図はその側面図。(A) is a schematic plan view of a fourth embodiment of a SAW sensor element according to the present invention, and (B) is a side view thereof.

符号の説明Explanation of symbols

1,31,41,51…SAWセンサ素子、2,32…圧電基板、2a,2b,32a,32b…長さ方向端部、3a,33a…薄板部、3b,33b…厚板部、4…支持部、5…検出用SAW共振子、6…第1SAWフィルタ、7…基準用SAW共振子、8…第2SAWフィルタ、9,12,15,18,44,47…入力側IDT、9a,9b,10a,10b,12a,12b,13a,13b,15a,15b,16a,16b,18a,18b,19a,19b…交差指電極、10,13,16,19,45,48…出力側IDT、11,14,17,20,55,57…反射器、21…SAWセンサ、22…第1発振回路、23…第2発振回路、24…周波数混合器、25…周波数検波器、26…矢印、27,28,29…キャパシタ、30…部品、30a…出力、42,43…トランスバーサル型SAWフィルタ、46,49…遮蔽電極、52,53…1ポート型SAW共振子、54,56…IDT。 DESCRIPTION OF SYMBOLS 1, 31, 41, 51 ... SAW sensor element, 2, 32 ... Piezoelectric substrate, 2a, 2b, 32a, 32b ... End in length direction, 3a, 33a ... Thin plate portion, 3b, 33b ... Thick plate portion, 4 ... Support part, 5 ... detecting SAW resonator, 6 ... first SAW filter, 7 ... reference SAW resonator, 8 ... second SAW filter, 9, 12, 15, 18, 44, 47 ... input side IDT, 9a, 9b , 10a, 10b, 12a, 12b, 13a, 13b, 15a, 15b, 16a, 16b, 18a, 18b, 19a, 19b ... crossing finger electrodes, 10, 13, 16, 19, 45, 48 ... output side IDT, 11 , 14, 17, 20, 55, 57 ... reflector, 21 ... SAW sensor, 22 ... first oscillation circuit, 23 ... second oscillation circuit, 24 ... frequency mixer, 25 ... frequency detector, 26 ... arrow, 27 , 28, 29 ... Sita, 30 ... parts, 30a ... output, 42, 43 ... transversal SAW filter, 46, 49 ... shield electrode, 52, 53 ... one-port SAW resonator, 54, 56 ... IDT.

Claims (7)

長さ方向に沿って薄板部と厚板部とを有する圧電基板と、前記圧電基板の前記薄板部上に形成されて弾性表面波を励振するための検出用IDTと、前記圧電基板の前記厚板部上に形成されて弾性表面波を励振するための基準用IDTと、前記圧電基板上に形成されかつ前記検出用IDTの出力に接続する第1弾性表面波フィルタと、前記圧電基板上に形成されかつ前記基準用IDTの出力に接続する第2弾性表面波フィルタとを備える弾性表面波センサ素子と、
前記弾性表面波センサ素子の前記検出用IDTと前記第1弾性表面波フィルタとの間を接続する第1発振回路と、
前記弾性表面波センサ素子の前記基準用IDTと前記第2弾性表面波フィルタとの間を接続する第2発振回路と、
前記弾性表面波センサ素子の前記第1弾性表面波フィルタ及び前記第2弾性表面波フィルタの各出力に接続した周波数混合器と、
前記周波数混合器に接続した周波数検波器とを備えることを特徴とする弾性表面波センサ。
A piezoelectric substrate having a thin plate portion and a thick plate portion along the length direction, a detection IDT formed on the thin plate portion of the piezoelectric substrate for exciting a surface acoustic wave, and the thickness of the piezoelectric substrate A reference IDT formed on the plate portion for exciting the surface acoustic wave, a first surface acoustic wave filter formed on the piezoelectric substrate and connected to the output of the detection IDT, and on the piezoelectric substrate A surface acoustic wave sensor element comprising a second surface acoustic wave filter formed and connected to the output of the reference IDT;
A first oscillation circuit that connects between the IDT for detection of the surface acoustic wave sensor element and the first surface acoustic wave filter;
A second oscillation circuit that connects between the reference IDT of the surface acoustic wave sensor element and the second surface acoustic wave filter;
A frequency mixer connected to each output of the first surface acoustic wave filter and the second surface acoustic wave filter of the surface acoustic wave sensor element;
A surface acoustic wave sensor comprising: a frequency detector connected to the frequency mixer.
前記第1発振回路及び前記第2発振回路の構成部品の全部又は一部が前記弾性表面波センサ素子の前記圧電基板上に形成されていることを特徴とする請求項1記載の弾性表面波センサ。   2. The surface acoustic wave sensor according to claim 1, wherein all or part of components of the first oscillation circuit and the second oscillation circuit are formed on the piezoelectric substrate of the surface acoustic wave sensor element. . 前記圧電基板をその長さ方向に沿って前記厚板部側の端部を自由端としかつ前記薄板部側の端部を剛固に固定して、前記弾性表面波センサ素子を片持ちに支持したことを特徴とする請求項1又は2記載の弾性表面波センサ。   The surface of the piezoelectric substrate is supported in a cantilever manner, with the end on the thick plate portion side being a free end and the end on the thin plate portion side being rigidly fixed along the length direction of the piezoelectric substrate. The surface acoustic wave sensor according to claim 1, wherein the surface acoustic wave sensor is provided. 前記周波数混合器と前記周波数検波器との間に接続したバンドパスフィルタを更に備えることを特徴とする請求項1乃至3のいずれか記載の弾性表面波センサ。   4. The surface acoustic wave sensor according to claim 1, further comprising a band pass filter connected between the frequency mixer and the frequency detector. 長さ方向に沿って薄板部と厚板部とを有する圧電基板と、前記圧電基板の前記薄板部上に形成されて弾性表面波を励振するための検出用IDTと、前記圧電基板の前記厚板部上に形成されて弾性表面波を励振するための基準用IDTと、前記圧電基板上に形成されかつ前記検出用IDTの出力に接続する第1弾性表面波フィルタと、前記圧電基板上に形成されかつ前記基準用IDTの出力に接続する第2弾性表面波フィルタとを備えることを特徴とする弾性表面波センサ素子。   A piezoelectric substrate having a thin plate portion and a thick plate portion along the length direction, a detection IDT formed on the thin plate portion of the piezoelectric substrate for exciting a surface acoustic wave, and the thickness of the piezoelectric substrate A reference IDT formed on the plate portion for exciting the surface acoustic wave, a first surface acoustic wave filter formed on the piezoelectric substrate and connected to the output of the detection IDT, and on the piezoelectric substrate A surface acoustic wave sensor element comprising: a second surface acoustic wave filter formed and connected to the output of the reference IDT. 前記検出用IDTと前記第1弾性表面波フィルタとの間を接続する第1発振回路の構成部品の全部又は一部と、前記基準用IDTと前記第2弾性表面波フィルタとの間を接続する第2発振回路の構成部品の全部又は一部とを前記圧電基板上に備えることを特徴とする請求項5記載の弾性表面波センサ素子。   All or a part of the components of the first oscillation circuit that connects between the detection IDT and the first surface acoustic wave filter, and between the reference IDT and the second surface acoustic wave filter are connected. 6. The surface acoustic wave sensor element according to claim 5, wherein all or part of the components of the second oscillation circuit are provided on the piezoelectric substrate. 前記第1弾性表面波フィルタ及び前記第2弾性表面波フィルタの出力に接続されるバンドパスフィルタの構成部品の一部を前記圧電基板上に備えることを特徴とする請求項5又は6記載の弾性表面波センサ。   The elastic part according to claim 5 or 6, wherein a part of components of a band-pass filter connected to outputs of the first surface acoustic wave filter and the second surface acoustic wave filter is provided on the piezoelectric substrate. Surface wave sensor.
JP2008088867A 2008-03-29 2008-03-29 Surface acoustic wave sensor element and surface acoustic wave sensor Withdrawn JP2009246572A (en)

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