JP2009226542A5 - - Google Patents

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JP2009226542A5
JP2009226542A5 JP2008074777A JP2008074777A JP2009226542A5 JP 2009226542 A5 JP2009226542 A5 JP 2009226542A5 JP 2008074777 A JP2008074777 A JP 2008074777A JP 2008074777 A JP2008074777 A JP 2008074777A JP 2009226542 A5 JP2009226542 A5 JP 2009226542A5
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mask blank
manufacturing
acid
substrate according
blank substrate
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JP2008074777A
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JP2009226542A (en
JP5317092B2 (en
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Claims (19)

ガラス基板の表面に研磨パッドを接触させ、前記ガラス基板の表面に研磨砥粒を含む研磨液を供給し、前記ガラス基板と前記研磨パッドとを相対的に移動させて前記ガラス基板の表面を研磨する研磨工程と、ガラス基板の表面を洗浄する洗浄工程とを有するマスクブランク用ガラス基板の製造方法であって、
前記研磨砥粒はコロイダルシリカであって、
前記研磨工程で使用する研磨液のゼータ電位の極性と、前記洗浄工程で使用する洗浄液のゼータ電位の極性とを一致させることを特徴とするマスクブランク用基板の製造方法。 A polishing pad is brought into contact with the surface of the glass substrate, a polishing liquid containing abrasive grains is supplied to the surface of the glass substrate, and the surface of the glass substrate is polished by relatively moving the glass substrate and the polishing pad. A method for producing a glass substrate for a mask blank having a polishing step to be performed and a cleaning step for cleaning the surface of the glass substrate,
The abrasive grains are colloidal silica,
A method for manufacturing a mask blank substrate, comprising: matching a polarity of a zeta potential of a polishing liquid used in the polishing step with a polarity of a zeta potential of a cleaning liquid used in the cleaning step. 前記研磨液と前記洗浄液のゼータ電位の極性が−（マイナス）であることを特徴とする請求項１に記載のマスクブランク用基板の製造方法。   2. The method for manufacturing a mask blank substrate according to claim 1, wherein polarities of zeta potentials of the polishing liquid and the cleaning liquid are − (minus). 3. 前記研磨液と前記洗浄液のゼータ電位は、−６０ｍＶ以上−３０ｍＶ以下であることを特徴とする請求項２に記載のマスクブランク用基板の製造方法。3. The method for manufacturing a mask blank substrate according to claim 2, wherein a zeta potential of the polishing liquid and the cleaning liquid is −60 mV to −30 mV. 前記研磨砥粒は、アニオン性のコロイダルシリカであることを特徴とする請求項２又は３に記載のマスクブランク用基板の製造方法。4. The method for manufacturing a mask blank substrate according to claim 2, wherein the abrasive grains are anionic colloidal silica. 前記洗浄液は、水酸化ナトリウム、水酸化カリウムから選ばれる少なくとも一つであることを特徴とする請求項２乃至４の何れか一に記載のマスクブランク用基板の製造方法。5. The method for manufacturing a mask blank substrate according to claim 2, wherein the cleaning liquid is at least one selected from sodium hydroxide and potassium hydroxide. 前記研磨液と前記洗浄液のゼータ電位の極性が＋（プラス）であることを特徴とする請求項１に記載のマスクブランク用基板の製造方法。The method for manufacturing a mask blank substrate according to claim 1, wherein the zeta potential polarity of the polishing liquid and the cleaning liquid is + (plus). 前記研磨液と前記洗浄液のゼータ電位は、３０ｍＶ以上６０ｍＶ以下であることを特徴とする請求項６に記載のマスクブランク用基板の製造方法。The method for manufacturing a mask blank substrate according to claim 6, wherein a zeta potential of the polishing liquid and the cleaning liquid is 30 mV or more and 60 mV or less. 前記研磨砥粒は、カチオン性のコロイダルシリカであることを特徴とする請求項６又は７に記載のマスクブランク用基板の製造方法。The method for producing a mask blank substrate according to claim 6 or 7, wherein the abrasive grains are cationic colloidal silica. 前記洗浄液は、硫酸、塩酸、フッ酸、ケイフッ酸から選ばれる少なくとも一つであることを特徴とする請求項６乃至８の何れか一に記載のマスクブランク用基板の製造方法。9. The method of manufacturing a mask blank substrate according to claim 6, wherein the cleaning liquid is at least one selected from sulfuric acid, hydrochloric acid, hydrofluoric acid, and silicic acid. 前記研磨液は、ｐＨが１〜５の範囲であることを特徴とする請求項１乃至９の何れか一に記載のマスクブランク用基板の製造方法。 The method for manufacturing a mask blank substrate according to any one of claims 1 to 9, wherein the polishing liquid has a pH in a range of 1 to 5. 前記研磨液は、無機酸および有機酸を含有することを特徴とする請求項１０に記載のマスクブランク用基板の製造方法。The method for manufacturing a mask blank substrate according to claim 10, wherein the polishing liquid contains an inorganic acid and an organic acid. 前記無機酸は、塩酸、硫酸、硝酸、燐酸、ホウ酸、ホスホン酸、ホスフィン酸から選ばれる少なくとも一つであることを特徴とする請求項１１に記載のマスクブランク用基板の製造方法。12. The method of manufacturing a mask blank substrate according to claim 11, wherein the inorganic acid is at least one selected from hydrochloric acid, sulfuric acid, nitric acid, phosphoric acid, boric acid, phosphonic acid, and phosphinic acid. 前記有機酸は、酒石酸、マレイン酸、マロン酸から選ばれる少なくとも一つであることを特徴とする請求項１１又は１２に記載のマスクブランク用基板の製造方法。The method of manufacturing a mask blank substrate according to claim 11 or 12, wherein the organic acid is at least one selected from tartaric acid, maleic acid, and malonic acid. 前記研磨液中の前記有機酸の含有量は、０．１重量％以上０．４重量％以下であることを特徴とする請求項１１乃至１３の何れか一に記載のマスクブランク用基板の製造方法。14. The mask blank substrate according to claim 11, wherein the content of the organic acid in the polishing liquid is 0.1 wt% or more and 0.4 wt% or less. Method. 前記基板は、多成分系ガラス基板であることを特徴とする請求項１乃至１４の何れか一に記載のマスクブランク用基板の製造方法。 The method for manufacturing a mask blank substrate according to any one of claims 1 to 14 , wherein the substrate is a multi-component glass substrate. 前記基板は、ＳｉＯ２とＴｉＯ２を含むガラス基板であることを特徴とする請求項１５に記載のマスクブランク用基板の製造方法。 The method for manufacturing a mask blank substrate according to claim 15 , wherein the substrate is a glass substrate containing SiO 2 and TiO 2 . 請求項１乃至１６の何れか一に記載のマスクブランク用基板の製造方法により得られるマスクブランク用基板の表面上に、露光光を反射する多層反射膜を形成することを特徴とする多層反射膜付き基板の製造方法。 A multilayer reflective film for reflecting exposure light is formed on a surface of a mask blank substrate obtained by the method for producing a mask blank substrate according to any one of claims 1 to 16. A method for manufacturing a substrate with a substrate. 請求項１７に記載の多層反射膜付き基板における前記多層反射膜上に、露光光の反射を防止する吸収体膜を形成することを特徴とする反射型マスクブランクの製造方法。 The manufacturing method of the reflective mask blank characterized by forming the absorber film | membrane which prevents reflection of exposure light on the said multilayer reflective film in the board | substrate with a multilayer reflective film of Claim 17 . 請求項１８に記載の反射型マスクブランクの製造方法によって得られた反射型マスクブランクにおける前記吸収体膜をパターニングして吸収体パターンを形成することを特徴とする反射型マスクの製造方法。 A method for manufacturing a reflective mask, comprising forming an absorber pattern by patterning the absorber film in a reflective mask blank obtained by the method for manufacturing a reflective mask blank according to claim 18 .
JP2008074777A 2008-03-23 2008-03-23 Manufacturing method of mask blank substrate, manufacturing method of substrate with multilayer reflective film, manufacturing method of reflecting mask blank, and manufacturing method of reflecting mask Active JP5317092B2 (en)

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WO2014130979A1 (en) * 2013-02-25 2014-08-28 Exogenesis Corporation Defect reduction in a substrate treatment method
KR20140015337A (en) * 2011-01-21 2014-02-06 오츠카 세이야쿠 가부시키가이샤 Method for inhibiting the growth of thermotolerant acidophilic bacteria
JP5598371B2 (en) * 2011-02-21 2014-10-01 旭硝子株式会社 Glass substrate polishing method
JP5647056B2 (en) * 2011-03-31 2014-12-24 Hoya株式会社 Manufacturing method of glass substrate for hard disk
JP5168387B2 (en) * 2011-06-08 2013-03-21 旭硝子株式会社 Method for manufacturing glass substrate for magnetic recording medium
JP5906107B2 (en) * 2012-03-22 2016-04-20 Hoya株式会社 Manufacturing method of glass substrate, manufacturing method of mask blank, manufacturing method of transfer mask, manufacturing method of substrate with multilayer reflective film, manufacturing method of reflective mask blank, and manufacturing method of reflective mask
WO2014203961A1 (en) * 2013-06-21 2014-12-24 Hoya株式会社 Mask blank substrate, mask blank, transfer mask, manufacturing methods therefor, and manufacturing method for semiconductor device
JP6350054B2 (en) * 2014-07-11 2018-07-04 旭硝子株式会社 Polishing pad cleaning method
JP6100984B1 (en) * 2015-09-15 2017-03-22 日本碍子株式会社 Manufacturing method of composite substrate
JP6737124B2 (en) * 2016-10-20 2020-08-05 Ａｇｃ株式会社 Method for manufacturing mask blank substrate

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JPH08107094A (en) * 1994-10-05 1996-04-23 Toshiba Corp Cleaning method for substrate
JP2006053965A (en) * 2004-08-10 2006-02-23 Fuji Electric Device Technology Co Ltd Manufacturing method of substrate for magnetic recording medium, and both-surface polisher and carrier for substrate polishing used in the method
JP2006348160A (en) * 2005-06-15 2006-12-28 Mitsui Mining & Smelting Co Ltd Electrically-conductive ink
JP4926521B2 (en) * 2006-03-30 2012-05-09 Ｈｏｙａ株式会社 REFLECTIVE MASK BLANK, REFLECTIVE MASK, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
JP2007301721A (en) * 2007-08-29 2007-11-22 Kao Corp Polishing liquid composition

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