JP2009218452A - Light-emitting device and lamp fitting - Google Patents

Light-emitting device and lamp fitting Download PDF

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JP2009218452A
JP2009218452A JP2008061852A JP2008061852A JP2009218452A JP 2009218452 A JP2009218452 A JP 2009218452A JP 2008061852 A JP2008061852 A JP 2008061852A JP 2008061852 A JP2008061852 A JP 2008061852A JP 2009218452 A JP2009218452 A JP 2009218452A
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light emitting
light
emitting unit
current
electrode
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Junichi Kinoshita
順一 木下
Kiyoshi Matsunaga
清 松永
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Toshiba Lighting and Technology Corp
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Harison Toshiba Lighting Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

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  • Non-Portable Lighting Devices Or Systems Thereof (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a highly efficient light-emitting device that achieves multiples states of light emission in which there is a great luminance difference, with good controllability by reducing variations in light emission in a low luminance state and to provide a lamp fitting. <P>SOLUTION: A light-emitting device includes: a first light-emitting section 110 which includes a first light-emitting area and to which a first electrode 130 is connected; and a second light-emitting section 210 which includes a second light-emitting area smaller than the first light-emitting area, to which a second electrode 230, different from the first electrode 130, is connected, and emits light independently of the first light-emitting section 110. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

本発明は、発光デバイス及び灯具に関する。   The present invention relates to a light emitting device and a lamp.

発光デバイスの代表例として発光ダイオード（ＬＥＤ：Light Emitting Diode）がある。
ＬＥＤの明るさを調整する最も簡単な方法は、駆動電流を制御する方法である。電源が定電圧の場合は、適当な値を持つ抵抗をＬＥＤと電源との間に接続することで、ＬＥＤに流れる電流を制御できる。これにより、ＬＥＤに流れる電流が大きい時に高輝度の発光が得られ、電流が小さい時に低輝度の発光が得られる。 A typical example of a light emitting device is a light emitting diode (LED).
The simplest method for adjusting the brightness of the LED is to control the drive current. When the power source is a constant voltage, the current flowing through the LED can be controlled by connecting a resistor having an appropriate value between the LED and the power source. Thereby, light emission with high luminance is obtained when the current flowing through the LED is large, and light emission with low luminance is obtained when the current is small.

一般に、ＬＥＤにおいて、電流と光出力との関係は必ずしも線形ではない。
すなわち、大きい電流を流しても、自己発熱と、注入キャリア密度（電流密度）の三乗以上に比例する非放射再結合成分の増加によって光出力は飽和傾向を示す。さらに、過度に大きい電流を流すと素子破壊や素子寿命への悪影響を引き起こす。
一方、過度に小さい電流で駆動したとき、表面再結合電流や、発光層の接合面の不完全性によるシャントパス（バイパス）形成で起こるリーク電流等の影響によって、発光効率が下がる。また、発光層の接合面内での電極抵抗の分布によって印加電圧に分布が生じ、均一な発光が得られず、チップ面の一部で発光しないこともある。
このように、ＬＥＤには、効率的に発光するための適切な駆動電流の範囲があり、従って、安定して出力できる輝度の範囲がある。 In general, in an LED, the relationship between current and light output is not necessarily linear.
That is, even when a large current is applied, the light output tends to saturate due to self-heating and an increase in the non-radiative recombination component proportional to the cube of the injected carrier density (current density). Furthermore, if an excessively large current is passed, the element is destroyed and the element life is adversely affected.
On the other hand, when driven with an excessively small current, the light emission efficiency decreases due to the influence of the surface recombination current and the leakage current caused by the formation of the shunt path (bypass) due to the imperfection of the bonding surface of the light emitting layer. In addition, the distribution of the electrode resistance in the bonding surface of the light emitting layer causes a distribution in the applied voltage, so that uniform light emission cannot be obtained and light may not be emitted on a part of the chip surface.
As described above, the LED has an appropriate driving current range for efficiently emitting light, and thus has a luminance range that can be stably output.

これに対し、極端に差のある高輝度状態と低輝度状態との発光が必要な応用がある。 このような例として、例えば自動車の後方ランプ用の赤色ＬＥＤが挙げられる。この場合、低輝度状態は、夜間のテールランプ発光であり、高輝度状態は、ブレーキを踏んだ時のストップランプ発光である。この高輝度状態の輝度は、例えば、低輝度状態の輝度の数１０倍の明るさであることが必要とされる。
このように極端に差異のある輝度は、従来の単一のＬＥＤで得ることは難しい。すなわち、従来の技術では、低輝度時には、発光の効率が低下し、発光にばらつきが発生する。 On the other hand, there are applications that require light emission in a high luminance state and a low luminance state that are extremely different. An example of this is a red LED for a rear lamp of an automobile. In this case, the low-luminance state is night tail lamp light emission, and the high-luminance state is stop lamp light emission when the brake is stepped on. The luminance in the high luminance state is required to be, for example, several ten times as bright as the luminance in the low luminance state.
Such extremely different brightness is difficult to obtain with a conventional single LED. That is, in the conventional technique, when the luminance is low, the light emission efficiency is reduced, and the light emission varies.

なお、特許文献１に、赤色ＬＥＤ素子と、赤色ＬＥＤ素子より発光面積が広い青色ＬＥＤ素子を備えた、色再現範囲の広いＬＥＤパッケージに関する技術が公開されている。
特開２００７−２７４２１号公報 Patent Document 1 discloses a technology relating to an LED package having a wide color reproduction range, which includes a red LED element and a blue LED element having a larger light emitting area than the red LED element.
Japanese Patent Laid-Open No. 2007-27421

本発明は、低輝度時の発光のばらつきを低減し、輝度差の大きい複数の条件の発光を制御性良く実現する、高効率の発光デバイス及び灯具を提供する。   The present invention provides a highly efficient light-emitting device and lamp that reduce variations in light emission at low luminance and realize light emission under a plurality of conditions with large luminance differences with good controllability.

本発明の一態様によれば、第１の発光面積を有し、第１の電極が接続された第１の発光部と、前記第１の発光面積よりも小さい面積の第２の発光面積を有し、前記第１の電極と異なる第２の電極が接続され、前記第１の発光部と独立して発光可能な第２の発光部と、を備えたことを特徴とする発光デバイスが提供される。   According to one embodiment of the present invention, a first light emitting unit having a first light emitting area and connected to the first electrode, and a second light emitting area having an area smaller than the first light emitting area are provided. And a second light-emitting unit that is connected to a second electrode different from the first electrode and is capable of emitting light independently of the first light-emitting unit. Is done.

本発明の別の一態様によれば、前記第１の発光部の光出力が、前記第２の発光部の光出力の１０倍以上であり、前記第１の発光部及び前記第２の発光部の発光ドミナント波長が、６００ｎｍ〜６４０ｎｍの範囲にあり、前記第１の発光部に供給される電流密度、及び、前記第２の発光部に供給される電流密度が、１０Ａ／ｃｍ２以上である上記の発光デバイスを用いたことを特徴とする車両後方表示用の灯具が提供される。 According to another aspect of the present invention, the light output of the first light emitting unit is 10 times or more than the light output of the second light emitting unit, and the first light emitting unit and the second light emitting unit. The emission dominant wavelength of the light emitting portion is in the range of 600 nm to 640 nm, and the current density supplied to the first light emitting portion and the current density supplied to the second light emitting portion are 10 A / cm 2 or more. There is provided a lamp for vehicle rear display using the above light emitting device.

本発明によれば、低輝度時の発光のばらつきを低減し、輝度差の大きい複数の状態の発光を制御性良く実現する、高効率の発光デバイス及び灯具が提供される。   ADVANTAGE OF THE INVENTION According to this invention, the highly efficient light-emitting device and lamp | ramp which reduce the dispersion | variation in the light emission at the time of low brightness | luminance, and implement | achieve light emission of several states with a large brightness | luminance difference with sufficient controllability are provided.

以下、本発明の実施の形態について図面を参照して詳細に説明する。図面は、本発明の一実施形態に係わり、図１〜図４は、発光デバイスの構成を例示する模式的斜視図、図５は、発光デバイスの構成を例示する回路図、図６は、灯具の構成を例示する模式的断面図である。
なお、本願明細書及び各図において、既出の図に関して前述したものと同様の要素には同一の符号を付して詳細な説明は適宜省略する。
（第１の実施の形態）
図１に表したように、本発明の第１の実施形態に係る発光デバイス１０は、第１の発光面積を有し、第１の電極１３０が接続された第１の発光部１１０と、第２の発光面積を有し、第２の電極２３０が接続された第２の発光部と、を備えている。 Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. The drawings relate to an embodiment of the present invention, FIGS. 1 to 4 are schematic perspective views illustrating the configuration of a light emitting device, FIG. 5 is a circuit diagram illustrating the configuration of the light emitting device, and FIG. It is a typical sectional view which illustrates the composition of.
Note that, in the present specification and each drawing, the same elements as those described above with reference to the previous drawings are denoted by the same reference numerals, and detailed description thereof is omitted as appropriate.
(First embodiment)
As shown in FIG. 1, the light emitting device 10 according to the first embodiment of the present invention includes a first light emitting unit 110 having a first light emitting area and having a first electrode 130 connected thereto, And a second light emitting unit having a light emitting area of 2 and having the second electrode 230 connected thereto.

第２の発光面積は、第１の発光面積より小さい。
そして、発光デバイス１０では、第１の発光部１１０と第２の発光部２１０とが、同一の半導体チップ３００に設けられている。 The second light emitting area is smaller than the first light emitting area.
In the light emitting device 10, the first light emitting unit 110 and the second light emitting unit 210 are provided in the same semiconductor chip 300.

半導体チップ３００は、ＬＥＤチップ（ＬＥＤ Die）であり、ｐ型クラッド層とｎ型クラッド層との間に、両クラッド層より小さいバンドギャップを有する発光層（活性層）３１０を挟んだ構成を有している。下側のクラッド層の下には、下側電極３２０が設けられている。例えば、発光層３１０の材料としてＧａＡｌＡｓ系やＩｎＡｌＧａＰ系の化合物半導体を用いた場合、赤色の発光を得ることができる。   The semiconductor chip 300 is an LED chip (LED Die), and has a configuration in which a light emitting layer (active layer) 310 having a band gap smaller than both cladding layers is sandwiched between a p-type cladding layer and an n-type cladding layer. is doing. A lower electrode 320 is provided under the lower cladding layer. For example, when a GaAlAs-based or InAlGaP-based compound semiconductor is used as the material of the light-emitting layer 310, red light emission can be obtained.

発光デバイス１０は、例えば、１辺が３５０μｍ角の直法体形状であり、その一部に、第２の面積（小さい面積）の第２の発光部２１０が設けられている。第２の発光部２１０は、例えば、１００μｍ角のＬＥＤであり、第２の発光部２１０以外の領域に、第１の面積（大きい面積）の第１の発光部１１０が設けられている。第１の発光部１１０と第２の発光部２１０の間には、分離溝３２９が設けられており、これらの発光部は互いに電気的に分離されている。例えば、発光層（活性層）を分離溝３２９によって分離することで、第１の発光部１１０と第２の発光部２１０とをそれぞれ独立に発光させることができる。なお、上記に限らず、発光デバイス１０のサイズ、形状は任意であり、また、第１の発光部１１０と第２の発光部２１０のそれぞれのサイズ、形状も任意である。   The light emitting device 10 has, for example, a rectangular parallelepiped shape with one side of 350 μm square, and a second light emitting unit 210 having a second area (small area) is provided in a part thereof. The second light emitting unit 210 is, for example, a 100 μm square LED, and the first light emitting unit 110 having a first area (large area) is provided in a region other than the second light emitting unit 210. A separation groove 329 is provided between the first light emitting unit 110 and the second light emitting unit 210, and these light emitting units are electrically separated from each other. For example, by separating the light emitting layer (active layer) by the separation groove 329, the first light emitting unit 110 and the second light emitting unit 210 can emit light independently. In addition, the size and shape of the light emitting device 10 are not limited to the above, and the size and shape of the first light emitting unit 110 and the second light emitting unit 210 are also arbitrary.

第１の発光部１１０の第１の電極１３０は、第１のワイヤー１６０をワイヤーボンディングするための円形のパッド部１３１と、電極指１３２を有している。この電極指１３２によって、第１の発光部１１０の上面の実質的全体に電流を広げることができる。   The first electrode 130 of the first light emitting unit 110 includes a circular pad portion 131 for wire bonding the first wire 160 and an electrode finger 132. The electrode fingers 132 can spread the current over substantially the entire top surface of the first light emitting unit 110.

一方、第２の発光部２１０の第２の電極２３０は、円形であり、第２のワイヤー２６０をワイヤーボンディングするためのパッド部の機能も果たす。
このように、第１の電極１３０と第２の電極２３０とは独立している。 On the other hand, the second electrode 230 of the second light emitting unit 210 is circular and also functions as a pad unit for wire bonding the second wire 260.
Thus, the first electrode 130 and the second electrode 230 are independent.

そして、第１の電極１３０と下側電極３２０との間に電流を流すことにより、第１の発光部１１０が発光する。そして、第２の電極２３０と下側電極３２０との間に電流を流すことにより、第２の発光部２１０が発光する。   Then, by passing a current between the first electrode 130 and the lower electrode 320, the first light emitting unit 110 emits light. Then, when a current is passed between the second electrode 230 and the lower electrode 320, the second light emitting unit 210 emits light.

このように、第１の発光部１１０と第２の発光部２１０に、異なる電極である、第１の電極１３０と第２の電極２３０をそれぞれ設けることで、第１の発光部１１０と第２の発光部１２０とは、互いに独立して発光可能とされている。   As described above, the first light emitting unit 110 and the second light emitting unit 210 are provided with the first electrode 130 and the second electrode 230, which are different electrodes, respectively. The light emitting unit 120 can emit light independently of each other.

これにより、第１の発光部１１０と第２の発光部２１０とをそれぞれ適切な駆動条件で発光させつつ、異なる輝度の発光を得ることができる。すなわち、低輝度を得たい時は、第２の発光部２１０のみを発光させる。このとき、第１の発光部１１０は、低輝度とは言え、第１の発光部１１０の適切な駆動条件で駆動されているため、安定した発光を得ることができ、発光のばらつきは実質上発生しない。   Thereby, it is possible to obtain light emission with different luminance while causing the first light emitting unit 110 and the second light emitting unit 210 to emit light under appropriate driving conditions. That is, when it is desired to obtain low luminance, only the second light emitting unit 210 emits light. At this time, although the first light emitting unit 110 is driven at an appropriate driving condition of the first light emitting unit 110 even though the luminance is low, stable light emission can be obtained, and the variation in light emission is substantially reduced. Does not occur.

また、高輝度を得たい時は、第１の発光部１１０のみ、または、第１の発光部１１０と第２の発光部２１０の両方を発光させる。この時、第１の発光部１１０（または第１の発光部１１０と第２の発光部２１０）は、適切な駆動条件で駆動されているため、過度に大きい電流を流すことがなく、安定した駆動を行うことができる。   Further, when it is desired to obtain high luminance, only the first light emitting unit 110 or both the first light emitting unit 110 and the second light emitting unit 210 are caused to emit light. At this time, since the first light emitting unit 110 (or the first light emitting unit 110 and the second light emitting unit 210) is driven under an appropriate driving condition, it does not flow an excessively large current and is stable. Drive can be performed.

このように、本実施形態の発光デバイス１０によれば、低輝度時の発光のばらつきを低減し、輝度差の大きい複数の状態の発光を制御性良く実現する、高効率の発光デバイスが提供される。   As described above, according to the light emitting device 10 of the present embodiment, a highly efficient light emitting device that reduces light emission variation at low luminance and realizes light emission in a plurality of states with large luminance differences with good controllability is provided. The

なお、第１の発光部１１０の第１の発光面積は、第１の発光部１１０に対応する発光層（活性層）３１０の面積に依存するが、第１の電極１３０に遮光性がある材料を用いた場合は、発光した光が第１の電極１３０によって遮光される。このため、このときは、実用的には、第１の発光面積は、第１の電極１３０の第１の発光部１１０における開口部となる。また、同様に、第２の発光面積は、実用的には、第２の電極２３０の第２の発光部２１０における開口部となる。従って、両電極に遮光性がある材料を用いた場合は、これら両発光部の電極以外の開口部の面積が異なっていれば良い。
すなわち、本実施形態の発光デバイスにおいて、第１の発光部１１０の第１の発光面積と、第２の発光部２１０の第２の発光面積とは、実質的な発光面積として異なっている。 The first light-emitting area of the first light-emitting portion 110 depends on the area of the light-emitting layer (active layer) 310 corresponding to the first light-emitting portion 110, but the first electrode 130 has a light-shielding material. Is used, the emitted light is shielded by the first electrode 130. Therefore, in this case, practically, the first light emitting area is an opening in the first light emitting unit 110 of the first electrode 130. Similarly, the second light emitting area is practically an opening in the second light emitting unit 210 of the second electrode 230. Therefore, in the case where a material having a light-shielding property is used for both electrodes, it is only necessary that the areas of the openings other than the electrodes of these light emitting portions are different.
That is, in the light emitting device of the present embodiment, the first light emitting area of the first light emitting unit 110 and the second light emitting area of the second light emitting unit 210 are different from each other as a substantial light emitting area.

（比較例）
比較例の発光デバイスは、本実施形態に係る発光デバイス１０に対し、発光部が１つであり、その発光面積は、発光デバイス１０における第１の発光面積と第２の発光面積の実質的に和となっている。
例えば、比較例の発光デバイスのＬＥＤチップは、ＧａＡｌＡｓからなる発光層を備えた約３５０μｍ角であり、接合部の面積は、１．２２５×１０−３ｃｍ２である。そして、標準駆動電流は、７０ｍＡである。従って、標準駆動条件での電流密度は、５７Ａ／ｃｍ２（＝７０ｍＡ／１．２２５×１０−３ｃｍ２）である。 (Comparative example)
The light emitting device of the comparative example has one light emitting portion with respect to the light emitting device 10 according to the present embodiment, and the light emitting area is substantially equal to the first light emitting area and the second light emitting area in the light emitting device 10. It is a sum.
For example, the LED chip of the light emitting device of the comparative example is about 350 μm square provided with a light emitting layer made of GaAlAs, and the area of the junction is 1.225 × 10 −3 cm 2 . The standard drive current is 70 mA. Accordingly, the current density under the standard driving condition is 57 A / cm 2 (= 70 mA / 1.225 × 10 −3 cm 2 ).

例えば、このＬＥＤは、製造後に、標準条件である７０ｍＡの電流で評価（検査）され、明るさが所定の仕様の範囲に入るように選別される。従って、標準条件である７０ｍＡで駆動すれば、安定した一定の所定の明るさが得られる。従って、このようなＬＥＤを複数設けた灯具（例えば自動車の後方ランプ）において、複数のＬＥＤ間での明るさのばらつきは実用上目立たない。   For example, this LED is evaluated (inspected) after manufacture with a current of 70 mA, which is a standard condition, and selected so that the brightness falls within a predetermined specification range. Therefore, when driving at 70 mA, which is a standard condition, stable and constant brightness can be obtained. Therefore, in a lamp provided with a plurality of such LEDs (for example, a rear lamp of an automobile), variations in brightness among the plurality of LEDs are not practically conspicuous.

このＬＥＤをストップランプ状態（高輝度状態）及びテールランプ（尾灯）状態（低輝度状態）で点灯させる。
ここで、ストップランプ状態は、ブレーキを踏むことで車両が制動状態（減速・停止）にあることを、後方に認識させる発光表示状態である。また、テールランプ状態は、自動車や列車などの車体後部につける赤色の標識灯としての点灯状態である。
ストップランプ状態で点灯させた場合は、ＬＥＤは、大電流駆動状態である、標準駆動電流値付近で動作されており、安定した駆動が行われ、複数のＬＥＤ間での明るさのばらつきも実質的に生じない。 This LED is lit in a stop lamp state (high luminance state) and a tail lamp (tail lamp) state (low luminance state).
Here, the stop lamp state is a light emission display state in which the vehicle is in a braking state (deceleration / stop) by stepping on the brake to recognize backward. The tail lamp state is a lighting state as a red marker lamp attached to the rear part of a vehicle body such as an automobile or a train.
When the LED is lit in the stop lamp state, the LED is operated in the vicinity of the standard drive current value, which is in a large current drive state, is driven stably, and the brightness variation among the plurality of LEDs is substantially reduced. Does not occur.

これに対して、テールランプ状態（低輝度状態）で点灯させた場合は、例えば、３ｍＡ程度の駆動電流、すなわち、２．５Ａ／ｃｍ２（＝３ｍＡ／１．２２５×１０−３）の電流密度の低電流で動作させる。このとき、例えば、ＬＥＤが上記のように標準条件である７０ｍＡの電流で評価され、明るさが所定の仕様の範囲（ランク）に入るように選別されている場合は、その評価条件よりかなり小さい電流で駆動するので、発光にばらつきが発生する。
すなわち、駆動電流が小さい場合には、表面再結合やシャントパスによるリーク電流のように発光に寄与しない無効電流の割合が増える。また、低輝度を発光するのに過度に大きい発光領域を使用することになるので、結晶の欠陥密度が一定であるとすれば面積が大きいために欠陥の数が増え、シャントパスが増える。また、面積が大きいと表面再結合電流の影響も大きくなる。そして、大面積になるほど、チップ面内の電圧分布も大きいため、発光の弱い部分も目立ってきて、輝度が低くなってしまい、ギラギラと輝く発光感がなくなる。 On the other hand, when the lamp is lit in the tail lamp state (low brightness state), for example, a driving current of about 3 mA, that is, a current density of 2.5 A / cm 2 (= 3 mA / 1.225 × 10 −3 ). Operate at low current. At this time, for example, when the LEDs are evaluated with the current of 70 mA, which is the standard condition, as described above, and the brightness is selected so as to fall within the range (rank) of the predetermined specification, it is considerably smaller than the evaluation condition. Since it is driven by an electric current, variation occurs in light emission.
That is, when the drive current is small, the proportion of reactive current that does not contribute to light emission, such as leakage current due to surface recombination or shunt path, increases. In addition, since an excessively large light emitting region is used to emit light with low luminance, if the defect density of the crystal is constant, the area is large, so the number of defects increases and the number of shunt paths increases. Further, when the area is large, the influence of the surface recombination current is also increased. And as the area becomes larger, the voltage distribution in the chip surface is larger, so that the weakly luminescent part becomes conspicuous, the luminance is lowered, and the shining light emission is lost.

このように、単一の発光部しか有しない比較例の発光デバイスでは、低輝度時（小電流駆動時）には、発光の効率が低下し、発光にばらつきが発生する。一方、低輝度時に対応させて発光デバイスを設計すると、高輝度時の輝度が不足する。   As described above, in the light-emitting device of the comparative example having only a single light-emitting portion, the light emission efficiency decreases and the light emission varies when the luminance is low (during low current driving). On the other hand, when a light emitting device is designed for low luminance, the luminance at high luminance is insufficient.

これに対して、本実施形態によれば、異なる発光面積を有する複数の発光部を設けてこれらをそれぞれ発光可能とすることにより、低輝度時の発光のばらつきを低減し、輝度差の大きい複数の状態の発光を制御性良く実現する、高効率の発光デバイスが提供される。
なお本実施形態に係る発光デバイスにおいて、第１の発光部１１０と第２の発光部２１０の発光色（発光ドミナント波長）は、実質的に同一とすることができる。 On the other hand, according to the present embodiment, by providing a plurality of light emitting units having different light emitting areas and enabling them to emit light respectively, the variation in light emission at low luminance is reduced, and a plurality of luminance differences are large. A highly efficient light emitting device that realizes light emission in the above state with good controllability is provided.
In the light emitting device according to the present embodiment, the light emission colors (light emission dominant wavelengths) of the first light emitting unit 110 and the second light emitting unit 210 can be substantially the same.

（第２の実施の形態）
図２に表したように、本発明の第２の実施形態に係る発光デバイス２０は、第１の発光部１１０と第２の発光部２１０とが、同一の外囲器（パッケージ）３７０に格納されている。そして、第１の発光部１１０として、第１のＬＥＤチップ１１１が用いられ、第２の発光部２１０として第２のＬＥＤチップ２１１が用いられている。 (Second Embodiment)
As shown in FIG. 2, in the light emitting device 20 according to the second embodiment of the present invention, the first light emitting unit 110 and the second light emitting unit 210 are stored in the same envelope (package) 370. Has been. The first LED chip 111 is used as the first light emitting unit 110, and the second LED chip 211 is used as the second light emitting unit 210.

すなわち、ＬＥＤチップに電流を流し、光取り出し効率を高め、さらには、信頼性を高めるため、ＬＥＤチップが適当な外囲器３７０に収納されている。外囲器３７０としては、砲弾型やＳＭＤ（Surface Mount Device）型等の各種の構成の外囲器を用いることができる。図２には、ＳＭＤ型の外囲器３７０が例示されている。   In other words, the LED chip is housed in a suitable envelope 370 in order to pass an electric current through the LED chip to increase the light extraction efficiency and further improve the reliability. As the envelope 370, envelopes of various configurations such as a shell type and an SMD (Surface Mount Device) type can be used. FIG. 2 illustrates an SMD type envelope 370.

カソード側リードフレーム３４０の上に、第１のＬＥＤチップ１１１及び第１のＬＥＤチップ２１１が導電材料によってマウントされている。そして、カソード側リードフレーム３４０はカソード側はんだパターン３５１に接続されている
第１のＬＥＤチップ１１１の上側の第１の電極１３０から、第１のアノード側リードフレーム１５０に第１のワイヤー１６０が設けられている。そして、第１のアノード側リードフレーム１５０は、第１のアノード側はんだパターン１５１に接続されている。
また、第２のＬＥＤチップ２１１の上側の第２の電極１３０から、第２のアノード側リードフレーム２５０に第２のワイヤー２６０が設けられている。そして、第２のアノード側リードフレーム２５０は、第２のアノード側はんだパターン２５１に接続されている。 On the cathode side lead frame 340, the first LED chip 111 and the first LED chip 211 are mounted with a conductive material. The cathode-side lead frame 340 is connected to the cathode-side solder pattern 351, and the first wire 160 is provided on the first anode-side lead frame 150 from the first electrode 130 on the upper side of the first LED chip 111. It has been. The first anode side lead frame 150 is connected to the first anode side solder pattern 151.
A second wire 260 is provided from the second electrode 130 on the upper side of the second LED chip 211 to the second anode-side lead frame 250. The second anode side lead frame 250 is connected to the second anode side solder pattern 251.

そして、また、カソード側リードフレーム３４０、第１、第２のアノード側リードフレーム１５０、２５０及び第１、第２のＬＥＤチップ１１１、２１１の外側には、反射率の高い白色の樹脂やセラミック等の外囲器３７０が配されている。
この外囲器３７０の上面開口部から透明な樹脂材料３８０を充填し、第１、第２のＬＥＤチップ１１１、１２１が封止されている。 Further, a white resin or ceramic with high reflectivity is provided outside the cathode side lead frame 340, the first and second anode side lead frames 150 and 250, and the first and second LED chips 111 and 211. The envelope 370 is arranged.
A transparent resin material 380 is filled from the opening on the upper surface of the envelope 370, and the first and second LED chips 111 and 121 are sealed.

第１のＬＥＤチップ１１１は、第１の発光面積を有し、第１の電極１３０が接続されており、第１の発光部１１０となる。
そして、第２のＬＥＤチップ２１１は、第２の発光面積を有し、第２の電極２３０が接続されており、第２の発光部２１０となる。そして、第２の発光面積は、第１の発光面積よりも小さい。
また、第１の発光部１１０と第２の発光部２１０の発光波長は実質的に等しく、すなわち、発光色は実質的に同じに設定できる。
テールランプ状態（低輝度状態）においては、第２のＬＥＤチップ２１１のみを発光させる。一方、ストップランプ状態（高輝度状態に）においては、第１のＬＥＤチップ１１１のみ、または第１のＬＥＤチップ１１１と第２のＬＥＤチップ２１１の両方を発光させる。これにより、第１実施形態に関して前述したものと同様の効果が得られる。 The first LED chip 111 has a first light emitting area, is connected to the first electrode 130, and becomes the first light emitting unit 110.
The second LED chip 211 has a second light emitting area, is connected to the second electrode 230, and becomes the second light emitting unit 210. The second light emission area is smaller than the first light emission area.
Further, the emission wavelengths of the first light emitting unit 110 and the second light emitting unit 210 are substantially equal, that is, the emission colors can be set to be substantially the same.
In the tail lamp state (low brightness state), only the second LED chip 211 emits light. On the other hand, in the stop lamp state (high luminance state), only the first LED chip 111 or both the first LED chip 111 and the second LED chip 211 are caused to emit light. Thereby, the same effects as those described above with respect to the first embodiment can be obtained.

このように、同一の発光波長を有し、異なる発光面積を有する複数の発光部をそれぞれ別のＬＥＤチップとして作製し、これらを同一の外囲器３７０に格納することで、例えば各種の標準仕様のＬＥＤチップの中から、各種用途の仕様に合わせた組み合わせのＬＥＤチップを採用することで、任意の仕様の発光デバイスを簡便に製造することができ、実用上非常に便利となる。   In this way, a plurality of light emitting portions having the same emission wavelength and different emission areas are produced as separate LED chips, and these are stored in the same envelope 370, for example, various standard specifications. By adopting a combination of LED chips that meet the specifications for various applications, it is possible to easily manufacture a light-emitting device having an arbitrary specification, which is very convenient in practice.

このように、異なる発光面積を有する複数の発光部を同一の外囲器３７０内に格納する本実施形態の発光デバイス２０によれば、低輝度時の発光のばらつきを低減し、輝度差の大きい複数の状態の発光を制御性良く実現する、高効率の発光デバイスが提供される。   As described above, according to the light emitting device 20 of the present embodiment in which a plurality of light emitting units having different light emitting areas are stored in the same envelope 370, variation in light emission at low luminance is reduced, and a luminance difference is large. Provided is a highly efficient light-emitting device that realizes light emission in a plurality of states with good controllability.

（第３の実施の形態）
図３に表したように、本発明の第３の実施形態に係る発光デバイス３０では、第１の発光部１１０と第２の発光部１２０とが同一の実装部材３９０に設けられている。実装部材３９０には、例えば、放熱機能を有するＰＣＢ（Printed Circuit Board）などの基板を使用することができる。 (Third embodiment)
As shown in FIG. 3, in the light emitting device 30 according to the third embodiment of the present invention, the first light emitting unit 110 and the second light emitting unit 120 are provided on the same mounting member 390. For the mounting member 390, for example, a substrate such as a PCB (Printed Circuit Board) having a heat dissipation function can be used.

そして、第１の発光部１１０として、第１のＬＥＤパッケージ１１２が設けられている。第１のＬＥＤパッケージ１１２は、第１の発光面積を有し、第１の電極１３０が接続されている。具体的には、第１の発光面積を有する第１のＬＥＤチップ１１１が、第１のＬＥＤパッケージ１１２に搭載されている。なお、この場合、第１の電極１３０は、第１のアノード側リードフレーム１５０または、第１のアノード側はんだパターン１５１とすることができる。   A first LED package 112 is provided as the first light emitting unit 110. The first LED package 112 has a first light emitting area and is connected to the first electrode 130. Specifically, the first LED chip 111 having the first light emitting area is mounted on the first LED package 112. In this case, the first electrode 130 can be the first anode-side lead frame 150 or the first anode-side solder pattern 151.

そして、第２の発光部２１０として、第２のＬＥＤパッケージ２１２が設けられている。第２のＬＥＤパッケージ２１２は、第２の発光面積を有し、第２の電極２３０が接続されている。具体的には、第２の発光面積を有する第２のＬＥＤチップ２１１が、第２のＬＥＤパッケージ２１２に搭載されている。なお、この場合、第２の電極２３０は、第２のアノード側リードフレーム２５０または、第２のアノード側はんだパターン２５１とすることができる。   A second LED package 212 is provided as the second light emitting unit 210. The second LED package 212 has a second light emitting area, and the second electrode 230 is connected thereto. Specifically, the second LED chip 211 having the second light emitting area is mounted on the second LED package 212. In this case, the second electrode 230 can be the second anode side lead frame 250 or the second anode side solder pattern 251.

そして、第２の発光面積は、第１の発光面積より小さい。
そして、第１の発光部１１０と第２の発光部２１０の発光波長は実質的に等しく、すなわち、発光色は実質的に同じに設定できる。
すなわち、第１の発光部１１０は、第１の半導体チップ（第１のＬＥＤチップ１１１）に設けられ、第２の発光部２１０は、第２の半導体チップ（第２のＬＥＤチップ２１１）に設けられ、第１の発光部１１０と第２の発光部２１０の発光色は、同じであり、第１の半導体チップは、第１の外囲器（第１のパッケージ１１２）に収容され、第２の半導体チップは、第２の外囲器（第２のパッケージ２１２）に収容され、第１の外囲器と第２の外囲器は、同一の実装部材３９０に搭載されている。 The second light emission area is smaller than the first light emission area.
The emission wavelengths of the first light emitting unit 110 and the second light emitting unit 210 are substantially equal, that is, the emission colors can be set to be substantially the same.
That is, the first light emitting unit 110 is provided in the first semiconductor chip (first LED chip 111), and the second light emitting unit 210 is provided in the second semiconductor chip (second LED chip 211). The light emission colors of the first light emitting unit 110 and the second light emitting unit 210 are the same, and the first semiconductor chip is accommodated in the first envelope (first package 112), and the second The semiconductor chip is accommodated in a second envelope (second package 212), and the first envelope and the second envelope are mounted on the same mounting member 390.

本実施形態においても、テールランプ状態（低輝度状態）においては、第２のＬＥＤチップ２１１のみを発光させる。一方、ストップランプ状態（高輝度状態に）においては、第１のＬＥＤチップ１１１のみ、または第１のＬＥＤチップ１１１と第２のＬＥＤチップ２１１の両方を発光させる。これにより、第１実施形態に関して前述したものと同様の効果が得られる。
このように、異なる発光面積を有する複数の発光部を別のＬＥＤパッケージとして作製し、これらを同一の実装部材３９０に搭載することで、例えば各種の標準仕様のＬＥＤパッケージの中から、各種用途の仕様に合わせた組み合わせのＬＥＤパッケージを採用することで、任意の仕様の発光デバイスを簡便に製造することができ、実用上非常に便利となる。 Also in the present embodiment, only the second LED chip 211 emits light in the tail lamp state (low brightness state). On the other hand, in the stop lamp state (high luminance state), only the first LED chip 111 or both the first LED chip 111 and the second LED chip 211 are caused to emit light. Thereby, the same effects as those described above with respect to the first embodiment can be obtained.
In this way, by producing a plurality of light emitting portions having different light emitting areas as separate LED packages and mounting them on the same mounting member 390, for example, various standard specification LED packages can be used for various purposes. By adopting a combination of LED packages according to the specifications, a light emitting device having an arbitrary specification can be easily manufactured, which is very convenient in practice.

このように、異なる発光面積を有する複数の発光部を同一の実装部材３９０に搭載する本実施形態の発光デバイス３０によれば、低輝度時の発光のばらつきを低減し、輝度差の大きい複数の状態の発光を制御性良く実現する、高効率の発光デバイスが提供される。   Thus, according to the light emitting device 30 of this embodiment in which a plurality of light emitting portions having different light emitting areas are mounted on the same mounting member 390, variation in light emission at low luminance is reduced, and a plurality of large luminance differences are provided. Provided is a highly efficient light-emitting device that realizes light emission in a state with good controllability.

なお、上記の発光デバイス３０では、発光面積が異なる複数のＬＥＤパッケージを同一基板上に設けた例であるが、発光面積が異なる複数のＬＥＤチップをベアチップ状態で同一基板上に設けても良い。   The light emitting device 30 is an example in which a plurality of LED packages having different light emitting areas are provided on the same substrate, but a plurality of LED chips having different light emitting areas may be provided on the same substrate in a bare chip state.

さらに、上記の発光デバイス１０〜３０において、第１の発光部１１０と第２の発光部２１０の２つの発光部が設けられているが、本発明はこれには限らず、異なる発光面積を有する３以上の発光部を、同一半導体チップ、同一外囲器、及び、同一基板に設けても良い。例えば、大、中、小の３種の発光面積の発光部をそれぞれ１つずつ設けても良い。   Further, in the light emitting devices 10 to 30 described above, the two light emitting units of the first light emitting unit 110 and the second light emitting unit 210 are provided, but the present invention is not limited to this and has different light emitting areas. Three or more light emitting units may be provided on the same semiconductor chip, the same envelope, and the same substrate. For example, you may provide one each of the light emission part of three types of light emission areas of large, medium, and small.

また、図４に例示した本実施形態の別の発光デバイス３１のように、大発光面積の発光部（第１の発光部１１０）を１つ設け、小発光面積の発光部（第２の発光部２１０）を２つ設けても良い。   Further, as in another light emitting device 31 of the present embodiment illustrated in FIG. 4, one light emitting part (first light emitting part 110) having a large light emitting area is provided, and a light emitting part (second light emitting part) having a small light emitting area is provided. Two parts 210) may be provided.

すなわち、発光部の数と、それぞれの発光面積の組み合わせは任意である。これにより、３つ以上の発光部にそれぞれ対応した駆動条件でそれぞれの発光部を駆動でき、これにより、複数の輝度の発光を安定して得ることができる。   That is, the combination of the number of light emission parts and each light emission area is arbitrary. Thereby, each light emission part can be driven on the drive conditions corresponding to three or more light emission parts, respectively, Thereby, light emission of a some brightness | luminance can be obtained stably.

（第４の実施の形態）
図５に表したように、本発明の第４の実施形態に係る発光デバイス４０は、第１の発光部１１０と、第２の発光部１２０に加え、さらに、第１の発光部１１０と第２の発光部２１０とに接続されたスイッチ回路５００を備えている。 (Fourth embodiment)
As shown in FIG. 5, the light emitting device 40 according to the fourth embodiment of the present invention includes, in addition to the first light emitting unit 110 and the second light emitting unit 120, the first light emitting unit 110 and the first light emitting unit 110. The switch circuit 500 connected to the two light emitting units 210 is provided.

第１の発光部１１０と第２の発光部２１０には、それぞれ直列抵抗成分Ｒ１、Ｒ２がある。そして、第１の発光部１１０と第２の発光部２１０は並列に接続され、それぞれスイッチ回路５００と接続されている。スイッチ回路５００と駆動端子Ｐとの間には、外部抵抗成分Ｒｅｘがある。
そして、駆動端子Ｐには、第１の発光部１１０及び第２の発光部２１０への駆動電流Ｉが供給される。 The first light emitting unit 110 and the second light emitting unit 210 have series resistance components R1 and R2, respectively. The first light emitting unit 110 and the second light emitting unit 210 are connected in parallel and are connected to the switch circuit 500, respectively. There is an external resistance component R ex between the switch circuit 500 and the drive terminal P.
The drive terminal P is supplied with the drive current I to the first light emitting unit 110 and the second light emitting unit 210.

このとき、スイッチ回路５００は、駆動電流Ｉが、所定のしきい値電流以下の場合は、駆動電流Ｉを第２の発光部２１０に通電する。
そして、駆動電流Ｉがしきい値電流より大きい場合は、例えば、しきい値電流以下の電流成分Ｉ２を第２の発光部２１０に供給し、駆動電流Ｉのうちしきい値電流より大きい電流成分Ｉ１を第１の発光部１１０に供給する。または、駆動電流Ｉがしきい値電流より大きい場合は、駆動電流Ｉを第１の発光部１１０のみに供給しても良い。すなわち、駆動電流Ｉが、しきい値電流より大きい場合は、駆動電流Ｉの少なくとも一部を、第１の発光部１１０に供給する。この場合、第１の発光部１１０と第２の発光部２１０に供給するそれぞれの電流の大きさは、発光特性と信頼性等を勘案して適切に設定できる。
すなわち、本実施形態の発光デバイス４０は、第１の発光部１１０と第２の発光部２１０とに接続され、供給すべき駆動電流Ｉがしきい値電流以下の場合は、駆動電流Ｉを第２の発光部２１０のみに供給し、供給すべき駆動電流Ｉがしきい値電流よりも大きい場合は、駆動電流の少なくとも一部を、第１の発光部に供給するスイッチ回路５００をさらに備えている。 At this time, the switch circuit 500 energizes the second light emitting unit 210 with the drive current I when the drive current I is equal to or less than a predetermined threshold current.
When the drive current I is larger than the threshold current, for example, a current component I 2 that is equal to or lower than the threshold current is supplied to the second light emitting unit 210, and the current that is greater than the threshold current in the drive current I. The component I 1 is supplied to the first light emitting unit 110. Alternatively, when the drive current I is larger than the threshold current, the drive current I may be supplied only to the first light emitting unit 110. That is, when the drive current I is larger than the threshold current, at least a part of the drive current I is supplied to the first light emitting unit 110. In this case, the magnitudes of the respective currents supplied to the first light emitting unit 110 and the second light emitting unit 210 can be appropriately set in consideration of the light emission characteristics and reliability.
That is, the light emitting device 40 of this embodiment is connected to the first light emitting unit 110 and the second light emitting unit 210, and when the driving current I to be supplied is equal to or less than the threshold current, the driving current I is When the driving current I to be supplied to the second light emitting unit 210 is larger than the threshold current, the switch circuit 500 further supplies at least a part of the driving current to the first light emitting unit. Yes.

このように、スイッチ回路５００は、２種類のＬＥＤに流れる電流を自動的に振り分ける機能を有している。これにより、例えば、所定のしきい値電流より小さい駆動電流に対しては、発光面積の小さい第２の発光部２１０のみに電流を流し、発光面積の大きい第１の発光部１１０には電流を流さないことにより、安定した駆動が実現できる。   Thus, the switch circuit 500 has a function of automatically distributing the currents flowing through the two types of LEDs. Thereby, for example, for a driving current smaller than a predetermined threshold current, a current is passed only through the second light emitting unit 210 having a small light emitting area, and a current is supplied to the first light emitting unit 110 having a large light emitting area. By not flowing, stable driving can be realized.

このように、スイッチ回路５００を設けたことにより、第１の発光部１１０と第２の発光部２１０とを有する発光デバイスを通常のＬＥＤのように使用することができるので、実用上非常に便利になる。   As described above, since the switch circuit 500 is provided, a light emitting device having the first light emitting unit 110 and the second light emitting unit 210 can be used like a normal LED. become.

スイッチ回路５００は、注入電流の一部を分岐して飽和トランジスタやサイリスタなどのベースやゲートに流すことで、全体の電流Ｉを、第１の発光部１１０と第２の発光部２１０のどちらに流すかを選択することが可能な回路構成を有する。このような機能を持つ各種の回路構成を、スイッチ回路５００に用いることができる。   The switch circuit 500 branches a part of the injected current and flows it to the base or gate of a saturation transistor, thyristor, etc., so that the entire current I is sent to either the first light emitting unit 110 or the second light emitting unit 210. It has a circuit configuration capable of selecting whether to flow. Various circuit configurations having such functions can be used for the switch circuit 500.

上記において、第１の発光部１１０と第２の発光部２１０の２種の発光部がある場合のスイッチ回路の動作について説明したが、本発明はこれに限らず、スイッチ回路は、異なる面積を有する、３つ以上を含めた複数の発光部を備えた場合において、それらの発光部に供給する電流を所定のしきい値電流に基づいて切り替え可能とする回路とすることができる。   In the above, the operation of the switch circuit in the case where there are two types of light emitting units, the first light emitting unit 110 and the second light emitting unit 210, is described, but the present invention is not limited to this, and the switch circuit has different areas. In the case where a plurality of light emitting units including three or more are provided, a circuit that can switch the current supplied to the light emitting units based on a predetermined threshold current can be obtained.

（第５の実施の形態）
以上の実施形態に係る発光デバイスは、例えば自動車後方ランプ等の灯具に応用できる。
自動車後方ランプ用の発光デバイスでは、発光ドミナント波長は、６００ｎｍ〜６４０ｎｍの範囲であり、赤色光を発光する。また、意匠性等のために複数のＬＥＤを並べても良い。電源は定電源であり、外部抵抗を用いてＬＥＤに流れる電流値を変化させて高輝度及び低輝度の２状態の明るさが制御される。 (Fifth embodiment)
The light emitting device according to the above embodiment can be applied to a lamp such as an automobile rear lamp.
In a light emitting device for an automobile rear lamp, the emission dominant wavelength is in the range of 600 nm to 640 nm, and emits red light. Moreover, you may arrange several LED for designability etc. The power source is a constant power source, and the brightness in two states of high luminance and low luminance is controlled by changing the value of the current flowing through the LED using an external resistor.

赤色のＡｌＩｎＧａＰ形ＬＥＤチップにおいては、１０Ａ／ｃｍ２以上の電流で駆動すれば、輝度のばらつきは比較的小さく、実用的には無視できる。
すなわち、発明者の検討によれば、標準駆動電流の２〜４割の電流が、実用的に安定して発光可能な下限の電流と考えられる。ＬＥＤチップのサイズとその標準駆動電流の２〜４割での電流密度を調べると、２２０μｍ角のＬＥＤチップを５ｍＡで駆動した時の電流密度は、例えば、１２．５Ａ／ｃｍ２である。そして、３５０μｍ角のＬＥＤチップを２０ｍＡで駆動した時の電流密度は、例えば、１６．３Ａ／ｃｍ２である。そして、１ｍｍ角のＬＥＤチップを１００ｍＡで駆動した時の電流密度は、例えば、１０Ａ／ｃｍ２である。
すなわち、標準駆動電流の２〜４割に相当するこれら電流密度は、これらのサイズのＬＥＤチップを問題なく使用できる電流密度であり、上記の１０Ａ／ｃｍ２以上である。 In a red AlInGaP LED chip, when driven with a current of 10 A / cm 2 or more, the variation in luminance is relatively small and can be ignored practically.
In other words, according to the inventor's study, 20 to 40% of the standard drive current is considered to be the lower limit current at which light can be emitted stably and practically. When the size of the LED chip and the current density at 20 to 40% of the standard driving current are examined, the current density when the 220 μm square LED chip is driven at 5 mA is, for example, 12.5 A / cm 2 . The current density when the 350 μm square LED chip is driven at 20 mA is, for example, 16.3 A / cm 2 . The current density when a 1 mm square LED chip is driven at 100 mA is, for example, 10 A / cm 2 .
That is, these current densities corresponding to 20 to 40% of the standard drive current are current densities at which LED chips of these sizes can be used without problems, and are 10 A / cm 2 or more.

従って、自動車用後方灯具に応用する場合、発光デバイスは、第１の発光部１１０の光出力が、第２の発光部２１０の光出力の１０倍以上であり、第１の発光部１１０及び第２の発光部２１０の発光ドミナント波長が、６００ｎｍ〜６４０ｎｍの範囲であり、第１の発光部１１０に供給される電流、及び、第２の発光部２１０に供給される電流が、１０Ａ／ｃｍ２以上であることが望ましい。 Therefore, when applied to an automotive rear lamp, the light emitting device has a light output of the first light emitting unit 110 that is 10 times or more that of the second light emitting unit 210, and the first light emitting unit 110 and the first light emitting unit 110 The emission dominant wavelength of the second light emitting unit 210 is in the range of 600 nm to 640 nm, and the current supplied to the first light emitting unit 110 and the current supplied to the second light emitting unit 210 are 10 A / cm 2. The above is desirable.

そして、テールランプ状態では、第２の発光部２１０のみを発光させ、ストップランプ状態の時は、第１の発光部１１０、または、第１の発光部１１０と第２の発光部２１０の両方を発光させる。   In the tail lamp state, only the second light emitting unit 210 emits light, and in the stop lamp state, the first light emitting unit 110 or both the first light emitting unit 110 and the second light emitting unit 210 emit light. Let

これにより、自動車用後方ランプに適した、発光のばらつきが低減された、１０倍以上の輝度差の複数の赤色光を発光する、高効率の発光デバイスが提供される。   Accordingly, a highly efficient light emitting device that emits a plurality of red lights having a luminance difference of 10 times or more, which is suitable for an automobile rear lamp and has a reduced light emission variation, is provided.

なお、既述の比較例におけるテールランプ状態での２．５Ａ／ｃｍ２の電流密度は、この下限の１０Ａ／ｃｍ２の電流密度よりも低い値であり、安定した発光が得られない駆動条件である。 Note that the current density of 2.5 A / cm 2 in the tail lamp state in the above-described comparative example is lower than the lower limit of 10 A / cm 2 , and the driving conditions under which stable light emission cannot be obtained. is there.

（第６の実施の形態）
以上の実施形態に係る発光デバイスは、例えば自動車後方灯具（ランプ）等の灯具に応用できる。 (Sixth embodiment)
The light emitting device according to the above embodiment can be applied to a lamp such as an automobile rear lamp (lamp).

例えば、図６に表したように、本発明の実施形態に係る灯具５０は、上記の実施形態の発光デバイス１０を３つ用い、それらが、反射部６１０、レンズ６２０、カバー６３０を有するランプハウジング６００に搭載されている。発光デバイス１０は、例えば、第１の発光部１１０の光出力が、第２の発光部２１０の光出力の１０倍以上であり、第１の発光部１１０及び第２の発光部２１０の発光ドミナント波長が、６００ｎｍ〜６４０ｎｍの範囲であり、第１の発光部１１０に供給される電流、及び、第２の発光部２１０に供給される電流が、１０Ａ／ｃｍ２以上である。
なお、図６では、発光デバイス１０が用いられているが、上記の実施形態の全ての発光デバイスを用いることができる。 For example, as illustrated in FIG. 6, the lamp 50 according to the embodiment of the present invention uses three light emitting devices 10 according to the above-described embodiment, and each of them includes a reflection portion 610, a lens 620, and a cover 630. 600. In the light emitting device 10, for example, the light output of the first light emitting unit 110 is 10 times or more the light output of the second light emitting unit 210, and the light emitting dominant of the first light emitting unit 110 and the second light emitting unit 210 is used. The wavelength is in the range of 600 nm to 640 nm, and the current supplied to the first light emitting unit 110 and the current supplied to the second light emitting unit 210 are 10 A / cm 2 or more.
In FIG. 6, the light emitting device 10 is used, but all the light emitting devices of the above embodiments can be used.

これにより、発光のばらつきが低減された、１０倍以上の輝度差の複数の赤色光を発光する、高効率の灯具が提供される。   This provides a highly efficient lamp that emits a plurality of red lights having a luminance difference of 10 times or more with reduced variation in light emission.

以上、具体例を参照しつつ、本発明の実施の形態について説明した。しかし、本発明は、これらの具体例に限定されるものではない。例えば、発光デバイス及び灯具を構成する各要素の具体的な構成に関しては、当業者が公知の範囲から適宜選択することにより本発明を同様に実施し、同様の効果を得ることができる限り、本発明の範囲に包含される。
また、各具体例のいずれか２つ以上の要素を技術的に可能な範囲で組み合わせたものも、本発明の要旨を包含する限り本発明の範囲に含まれる。
その他、本発明の実施の形態として上述した発光デバイス及び灯具を基にして、当業者が適宜設計変更して実施し得る全ての発光デバイス及び灯具も、本発明の要旨を包含する限り、本発明の範囲に属する。
その他、本発明の思想の範疇において、当業者であれば、各種の変更例及び修正例に想到し得るものであり、それら変更例及び修正例についても本発明の範囲に属するものと了解される。 The embodiments of the present invention have been described above with reference to specific examples. However, the present invention is not limited to these specific examples. For example, with regard to the specific configuration of each element constituting the light emitting device and the lamp, the present invention is similarly implemented by appropriately selecting from a well-known range by those skilled in the art, as long as the same effect can be obtained. It is included in the scope of the invention.
Moreover, what combined any two or more elements of each specific example in the technically possible range is also included in the scope of the present invention as long as the gist of the present invention is included.
In addition, all light-emitting devices and lamps that can be implemented by those skilled in the art based on the light-emitting devices and lamps described above as embodiments of the present invention are also included in the present invention as long as they include the gist of the present invention. Belongs to the range.
In addition, in the category of the idea of the present invention, those skilled in the art can conceive various changes and modifications, and it is understood that these changes and modifications also belong to the scope of the present invention. .

発光デバイスの構成を例示する模式的斜視図。FIG. 6 is a schematic perspective view illustrating the configuration of a light emitting device. 発光デバイスの構成を例示する模式的斜視図。FIG. 6 is a schematic perspective view illustrating the configuration of a light emitting device. 発光デバイスの構成を例示する模式的斜視図。FIG. 6 is a schematic perspective view illustrating the configuration of a light emitting device. 発光デバイスの構成を例示する模式的斜視図。FIG. 6 is a schematic perspective view illustrating the configuration of a light emitting device. 発光デバイスの構成を例示する回路図。FIG. 6 is a circuit diagram illustrating the configuration of a light-emitting device. 灯具の構成を例示する模式的断面図。The typical sectional view which illustrates the composition of a lamp.

符号の説明Explanation of symbols

１０、２０、３０、３１、４０…発光デバイス、 ５０…灯具、 １１０…第１の発光部、 １３０…第１の電極、 ２１０…第２の発光部、 ２３０…第２の電極、 ３００…半導体チップ、 ３７０…外囲器、 ３９０…実装部材、５００…スイッチ回路、 ６００…ランプハウジング   DESCRIPTION OF SYMBOLS 10, 20, 30, 31, 40 ... Light-emitting device, 50 ... Lamp, 110 ... 1st light emission part, 130 ... 1st electrode, 210 ... 2nd light emission part, 230 ... 2nd electrode, 300 ... Semiconductor Chip 370 ... Envelope 390 ... Mounting member 500 ... Switch circuit 600 ... Lamp housing

Claims (4)

第１の発光面積を有し、第１の電極が接続された第１の発光部と、
前記第１の発光面積よりも小さい面積の第２の発光面積を有し、前記第１の電極と異なる第２の電極が接続され、前記第１の発光部と独立して発光可能な第２の発光部と、
を備えたことを特徴とする発光デバイス。 A first light-emitting portion having a first light-emitting area and connected to the first electrode;
A second light-emitting area having a second light-emitting area smaller than the first light-emitting area, connected to a second electrode different from the first electrode, and capable of emitting light independently of the first light-emitting portion; The light emitting part of
A light emitting device comprising: 前記第１の発光部と前記第２の発光部は、同一の半導体チップに設けられていることを特徴とする請求項１記載の発光デバイス。   The light emitting device according to claim 1, wherein the first light emitting unit and the second light emitting unit are provided on the same semiconductor chip. 前記第１の発光部は、第１の半導体チップに設けられ、
前記第２の発光部は、第２の半導体チップに設けられ、
前記第１の発光部と前記第２の発光部の発光色は、同じであり、
前記第１の半導体チップと前記第２の半導体チップは、同一の外囲器に収容されてなることを特徴とする請求項１記載の発光デバイス。 The first light emitting unit is provided in a first semiconductor chip,
The second light emitting unit is provided in a second semiconductor chip,
The emission colors of the first light emitting unit and the second light emitting unit are the same,
The light emitting device according to claim 1, wherein the first semiconductor chip and the second semiconductor chip are accommodated in the same envelope. 前記第１の発光部の光出力が、前記第２の発光部の光出力の１０倍以上であり、
前記第１の発光部及び前記第２の発光部の発光ドミナント波長が、６００ｎｍ〜６４０ｎｍの範囲にあり、
前記第１の発光部に供給される電流密度、及び、前記第２の発光部に供給される電流密度が、１０Ａ／ｃｍ２以上である請求項１〜３のいずれか１つに記載の発光デバイスを用いたことを特徴とする車両後方表示用の灯具。 The light output of the first light emitting unit is 10 times or more the light output of the second light emitting unit;
The emission dominant wavelength of the first light emitting unit and the second light emitting unit is in the range of 600 nm to 640 nm,
4. The light emission according to claim 1, wherein a current density supplied to the first light emitting unit and a current density supplied to the second light emitting unit are 10 A / cm 2 or more. A vehicle rear display lamp characterized by using a device.
JP2008061852A 2008-03-11 2008-03-11 Light-emitting device and lamp fitting Abandoned JP2009218452A (en)

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JP2012048862A (en) * 2010-08-24 2012-03-08 Stanley Electric Co Ltd Lamp assembly for vehicle

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Publication number Priority date Publication date Assignee Title
JP2000331508A (en) * 1999-05-21 2000-11-30 Stanley Electric Co Ltd Led lamp and vehicular lighting fixture using led lamp for light source
JP2005063706A (en) * 2003-08-20 2005-03-10 Stanley Electric Co Ltd Vehicle head lamp and light source device therefor
WO2007115523A1 (en) * 2006-03-31 2007-10-18 Osram Opto Semiconductors Gmbh Optoelectronic headlight, method for production of an optoelectronic headlight, and a luminescence diode chip

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JP2012048862A (en) * 2010-08-24 2012-03-08 Stanley Electric Co Ltd Lamp assembly for vehicle

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