JP2009218422A - Semiconductor light emitting device, and image display device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide: a semiconductor light emitting device capable of providing a display displaying deeper green than a conventional one by using an oxynitride phosphor; and an image display device using it. <P>SOLUTION: This semiconductor light emitting device is provided with a semiconductor light emitting element emitting excitation light, and an Mn-activated oxide phosphor or an Mn-activated oxynitride phosphor emitting green light by absorbing the excitation light. This image display device is provided with: the semiconductor light emitting device emitting white light as a backlight light source; a liquid crystal panel emitting display light by modulating the white light based on an image signal; and a blue color filter selectively transmitting blue light within the white light. In the image display device, the maximum value of transmittance of the blue color filter, the transmittance at 500 nm and the transmittance at 515 nm are represented as TI (max), TI (500) and TI (515), respectively, in the transmission spectrum characteristic of the blue color filter, TI (max), TI (500) and TI (515) satisfy a specific condition. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a semiconductor light emitting device including a semiconductor light emitting element and a phosphor, and an image display device using the same.

  In recent years, development competition for backlights for small liquid crystal displays (LCDs) has intensified. In this field, various types of backlight light sources have been proposed, but no system that satisfies both brightness and color reproducibility (NTSC ratio) at the same time has been found. Here, the NTSC ratio is the NTSC (National Television System) of the area of a triangle obtained by connecting the chromaticity coordinates of red, green and blue colors in the chromaticity coordinates (u ′, v ′) in the CIE 1976 chromaticity diagram. Comittee) chromaticity coordinates (u ′, v ′) (red (0.498, 0.519), green (0.076, 0.576) on the CIE 1976 chromaticity diagram for each color of red, green, and blue , Blue (0.152, 0.196)) is a ratio to the area of the triangle obtained.

Currently, a backlight light source for LCDs is activated by a blue light emitting element (peak wavelength: around 450 nm) and trivalent cerium which is excited by the blue light and emits yellow light (Y, Gd) _3. A light emitting device that emits white light in combination with a wavelength conversion unit using (Al, Ga) ₅ O ₁₂ phosphor or (Sr, Ba, Ca) ₂ SiO ₄ phosphor activated with divalent europium Mainly used. However, when these light emitting devices are used as LCD backlights, the color reproducibility (NTSC ratio) of the LCD remains at about 70%.

  For example, in Japanese Patent Application Laid-Open No. 2004-287323 (Patent Document 1), a red light emitting LED chip, a green light emitting LED chip, and a blue light emitting LED chip are combined into one package as a backlight using a light emitting diode (LED). An RGB-LED, and a combination of an LED that emits ultraviolet light and an RGB phosphor are described. In the former case, the NTSC ratio can achieve a value exceeding 100%. However, since the driving characteristics of each color LED are different, it is difficult to produce a desired color and the driving circuit is complicated. And has a problem that it is not suitable for mobile use. In the latter case, there is a problem that there is no blue phosphor which has high luminance and is suitable for a backlight.

Japanese Patent Laid-Open No. 2006-16413 (Patent Document 2) discloses a nitride phosphor that emits red light and a phosphor that emits green light by a light emitting element that emits blue light, and exhibits white light. A light emitting device is disclosed. According to this method, since a blue LED can be used for blue light, there is no problem of no blue phosphor having high luminance and suitable for a backlight. Here, for example, an oxynitride phosphor disclosed in Japanese Patent Application Laid-Open No. 2005-255895 (Patent Document 3) has been suitably used as the phosphor exhibiting green light emission. Since the phosphors described in Patent Documents 2 and 3 are based on silicon nitride ceramics that are stable against chemical and mechanical impacts, they have excellent environmental resistance when used in light-emitting devices. It is possible to realize a light emitting device exhibiting excellent color stability. In addition, since phosphors of two colors, green and red, are used as the phosphor, when the light-emitting element that emits white light is combined with the blue LED, the phosphor is activated by the trivalent cerium that emits yellow light. Compared to the case of using (Y, Gd) ₃ (Al, Ga) ₅ O ₁₂ phosphor or (Sr, Ba, Ca) ₂ SiO ₄ phosphor activated with divalent europium, a wider color Reproducibility (NTSC ratio) can be realized.

When a white light emitting device using a blue LED, a red phosphor, and a green phosphor is used as a backlight light source of a liquid crystal display device, the green phosphor is positioned between blue and red, and thus the emission spectral line width is particularly large. Narrow ones are required. When the emission spectral line width of the green phosphor is narrow, the green color reproduction range of the display tends to be widened. A liquid crystal display using a blue LED and the phosphors disclosed in Patent Documents 2 and 3 does not have a sufficient green color gamut because the spectrum width of the emission spectrum of the green phosphor is 50 nm or more. Therefore, there is a demand for a semiconductor light emitting device that emits white light that can realize a display capable of displaying a wider green color, and an image display device that uses the semiconductor light emitting device that emits white light.
JP 2004-287323 A JP 2006-16413 A JP 2005-255895 A JP 2002-194349 A International Publication No. 2007/099862 Pamphlet Proceedings of the 68th JSAP Scientific Lecture Meeting p. 1473 “Luminescent characteristics of aluminum oxynitride green phosphor”

  The present invention has been made to solve the above-described problems, and an object of the present invention is to provide a semiconductor light-emitting device that uses an oxynitride phosphor and can realize a display that displays a deeper green color than the conventional one, and a semiconductor light-emitting device It is to provide an image display device used.

  The semiconductor light-emitting device of the present invention includes a semiconductor light-emitting element that emits excitation light and a green phosphor that absorbs the excitation light and emits green light, and the green phosphor is a Mn-activated oxide phosphor or a Mn-activated acid. It is a nitride phosphor.

The full width at half maximum of the emission spectrum of the Mn-activated oxynitride phosphor in the present invention is preferably 40 nm or less. The Mn activated oxide phosphor in the present invention is preferably Mn activated ZnAl ₂ O ₄ , and the Mn activated oxynitride phosphor is preferably Mn activated γ-AlON.

  Moreover, it is preferable that the light emission peak wavelength of the semiconductor light-emitting device in this invention is 430-460 nm, and it is more preferable that it is 440-450 nm.

  The semiconductor light-emitting device of the present invention preferably includes a second phosphor that emits red light when irradiated with excitation light.

  Moreover, it is preferable that the 2nd fluorescent substance in this invention emits red light which has a peak wavelength in the wavelength range of 620-670 nm by irradiation of the said excitation light. In the second phosphor of the present invention, the half width of the emission spectrum is preferably 110 nm or less, and the half width of the emission spectrum is preferably 95 nm or less.

The second phosphor in the present invention preferably contains Eu-activated CaAlSiN ₃ or Eu-activated M ₂ Si ₅ N ₈ (M = Ba, Sr).

  The present invention also provides a semiconductor light emitting device according to the present invention that emits white light as a backlight light source, a liquid crystal panel that modulates the white light based on a video signal and emits it as display light, and the white light. An image display device including a blue color filter that selectively transmits blue light, wherein the maximum transmission value of the blue color filter is TI (max) and transmission at 500 nm in the transmission spectrum characteristics of the blue color filter. When the transmittance is TI (500) and the transmittance at 515 nm is TI (515), TI (max), TI (500), and TI (515) satisfy the following conditional expressions (1) and (2). Also provide about.

TI (500) / TI (max) ≦ 0.46 (1)
TI (515) / TI (max) ≦ 0.16 (2)
In the image display device of the present invention, the blue color filter is configured to include pigment blue (P.B.15: 6) as a blue pigment and pigment violet (P.V.23) as a violet pigment. Is preferred. In this case, in the blue color filter, the pigment blue (P.B.15: 6) and the pigment violet (P.V.23) are mixed in a weight ratio that satisfies the following conditional expression (3). It is preferable.

    P. B. 15: 6 weight / P. V. 23 weight ≦ 0.25 (3)

  ADVANTAGE OF THE INVENTION According to this invention, when used for image display apparatuses, such as a liquid crystal display, the semiconductor light-emitting device which can implement | achieve the display which can display deeper green than before can be provided.

  FIG. 1 is a cross-sectional view schematically showing a semiconductor light emitting device 1 as a preferred example of the present invention. A semiconductor light emitting device 1 of the present invention includes a semiconductor light emitting element 2 that emits excitation light and a green phosphor (not shown) that absorbs the excitation light and emits green light, and the green phosphor is Mn-activated oxidized. It is characterized by being a product phosphor or a Mn activated oxynitride phosphor. In the semiconductor light emitting device 1 of the example shown in FIG. 1, a semiconductor light emitting element 2 is placed on a printed wiring board 3 as a base, and a fluorescent light is placed inside a resin frame 4 that is also placed on the printed wiring board 3. The semiconductor light emitting device 2 is filled with a mold resin 5 made of a translucent resin in which a body (including the above-described Mn-activated oxide phosphor or Mn-activated oxynitride phosphor which is a feature of the present invention) is dispersed. It is sealed. In the example shown in FIG. 1, the semiconductor light emitting device 2 has an InGaN layer 6 as an active layer, and has a p-side electrode 7 and an n-side electrode 8 sandwiching the InGaN layer 6, and the n-side electrode 8. However, it is electrically connected to the n electrode part 9 provided from the upper surface to the back surface of the printed wiring board 3 through an adhesive 10 having conductivity. In the example shown in FIG. 1, the p-side electrode 8 of the semiconductor light-emitting element 2 is connected to the p-electrode portion 11 provided from the top surface to the back surface of the printed wiring board 3 via the metal wire 12 separately from the n-electrode portion 9 described above. Are electrically connected. The semiconductor light emitting device of the present invention is not limited to the structure as shown in FIG. 1, and a conventionally known general structure can be adopted.

In the semiconductor light emitting device of the present invention, as the phosphor used as the green phosphor, a Mn-activated oxide phosphor or a Mn-activated nitride phosphor is used, and the Mn-activated oxynitride phosphor is particularly excellent in durability. Preferably used. In addition, it is preferable that the half value width of the emission spectrum of these fluorescent substances is 40 nm or less. This is because by using a green phosphor whose emission spectrum has a half-value width of 40 nm or less, the green light emitted from the green phosphor exhibits a deep green color. The deep green light emitted from the green phosphor means that when the semiconductor light-emitting device of the present invention is used for an image display device such as a liquid crystal display, a display device showing deep green can be realized. As such a Mn-activated oxide phosphor, a ZnAl ₂ O ₄ : Mn phosphor shown in JP-A-2002-194349 (Patent Document 4) described above is given as a preferred specific example, and a Mn-activated oxynitride is mentioned. As a phosphor, the above-mentioned international publication 2007/099862 pamphlet (patent document 5), the 68th JSAP academic lecture presentation proceedings p. As a preferable specific example, a Mn-activated γ-AlON phosphor exemplified in 1473 “Luminescent characteristics of aluminum oxynitride green phosphor” (Non-Patent Document 1) is cited. Here, the Mn-activated gamma-AlON, composition formula _{M a A b Al c O d} N e (M is Mn, Ce, Pr, Nd, Sm, Eu, GD, Tb, Dy, Tm, of the Yb Mn In the formula, A is one or more metal elements other than M and Al, and is expressed as a + b + c + d + e = 1), and the following (4) to (8) What shows the composition of the range chosen from the value which satisfy | fills all the conditions is used suitably.

0.00001 ≦ a ≦ 0.1 (4)
0 ≦ b ≦ 0.40 (5)
0.10 ≦ c ≦ 0.48 (6)
0.25 ≦ d ≦ 0.60 (7)
0.02 ≦ e ≦ 0.35 (8)
The Mn-activated ZnAl ₂ O ₄ phosphor and the Mn-activated γ-AlON phosphor are excited efficiently by blue light of 420 to 460 nm, the half width of the emission spectrum is as sharp as 33 nm, and the emission peak is green as 515 nm. As a phosphor, it is near a short wavelength. The chromaticity point of the emission spectrum shows a deep green color (u ′, v ′) ≈ (0.050, 0.570) on the CIE 1976 chromaticity coordinates. Here, FIG. 2 is a transmission spectrum of a green color filter and a red color filter that are preferably used in the image display device of the present invention to be described later. In FIG. 2, the vertical axis represents transmittance (%), and the horizontal axis represents The wavelength (nm), the solid line indicates the transmission spectrum of the green color filter, and the broken line indicates the transmission spectrum of the red color filter. The Mn-activated γ-AlON phosphor used in the present invention has good wavelength matching with a green color filter generally used in a liquid crystal display device whose transmittance is shown in FIG. For this reason, when the semiconductor light emitting device of the present invention is used as a backlight of an image display device, green light can be emitted with high efficiency. In addition, the above-described emission characteristics shown in FIG. 2 are the values indicated by the emission spectrum of Eu-activated β-type SiAlON phosphor used in a conventional semiconductor light emitting device (half-value width of about 55 nm, emission peak of about 540 nm, chromaticity coordinates ( u ′, v ′) ≈ (nearly equal) (0.130, 0.575)), a deeper green color is shown in the u ′ direction. Here, the deep color is used to mean a color having a wider color reproduction range when the image display apparatus is configured.

As the semiconductor light emitting element 2 used in the semiconductor light emitting device 1 of the present invention, a conventionally known element can be used, but a semiconductor light emitting element that emits primary light having an emission peak wavelength of 430 to 460 nm is preferable. . If the emission peak wavelength is out of the above range, for example, when a Mn-activated ZnAl ₂ O ₄ phosphor or a Mn-activated γ-AlON phosphor is used as the green phosphor, the emission efficiency of the green phosphor is lowered. As the semiconductor light emitting device exhibiting such an emission peak wavelength, a semiconductor light emitting device having an InGaN layer as an active layer can be preferably exemplified. The emission peak wavelength of the semiconductor light emitting device 2 used in the present invention has good wavelength matching with the blue color filter described later, and the excitation efficiency of the Mn activated ZnAl ₂ O ₄ phosphor and the Mn activated γ-AlON phosphor is particularly good. Therefore, it is more preferably 440 to 450 nm.

  In the semiconductor light emitting device 1 of the present invention, when the Mn-activated oxide phosphor or the Mn-activated oxynitride phosphor described above is the first phosphor, the second phosphor that emits red light when irradiated with excitation light is used. It is preferable to further provide. That is, in the semiconductor light emitting device 1 of the present invention, the semiconductor light emitting element 2 exhibits a blue color, and the green phosphor composed of the Mn activated oxide phosphor or the Mn activated oxynitride phosphor exhibits a green color. From the viewpoint of obtaining the semiconductor light emitting device 1 that exhibits white color by mixing with green, it is preferable that a red phosphor is used as the second phosphor. In the case of the semiconductor light emitting device 1 of the example shown in FIG. 1, the second phosphor (not shown) is dispersed in the mold resin 5 together with the Mn activated oxynitride phosphor described above.

  Here, the second phosphor used in the semiconductor light emitting device 1 of the present invention is preferably a red phosphor that emits red light having a peak wavelength in a wavelength range of 620 to 670 nm when irradiated with excitation light. Here, when the peak wavelength of the second phosphor is less than 620 nm, the overlap of the emission spectrum of the green phosphor and the red phosphor increases, and when the semiconductor light emitting device is used for an image display device, There is a possibility that the green color gamut of the image display device becomes narrow. Further, when the peak wavelength of the second phosphor exceeds 670 nm, the red light is out of the region where the human eye can be sufficiently visually recognized, so that the light emitting efficiency of the light emitting element may be lowered.

  In addition, the full width at half maximum of the emission spectrum of the second phosphor in the present invention is preferably 110 nm or less from the viewpoint that the image display device shows a deeper red color when the semiconductor light-emitting device is used for the image display device. More preferably, it is 95 nm or less. By setting the full width at half maximum to 110 nm or less, overlapping of the emission spectrum of the second phosphor (red phosphor) and the emission spectrum of the green phosphor is also suppressed.

As such a second phosphor (red phosphor), an Eu activated CaAlSiN ₃ phosphor or an Eu activated M ₂ Si ₅ N ₈ (M = Ba, Sr) phosphor can be suitably used. Among these, in particular, it has a high emission efficiency at an emission peak of 650 nm or more, a half width of 95 nm or less, and high emission in a region where spectrum overlap with Mn-activated ZnAl ₂ O ₄ or Mn-activated γ-AlON is particularly small. An Eu-activated CaAlSiN ₃ phosphor is particularly preferred because of its efficiency.

On the other hand, when the light emitting device is configured with a combination using the Eu-activated β-type SiAlON phosphor shown in Patent Document 3 described above as the green phosphor, the red phosphor has a large overlap of the emission spectrum with the green phosphor. When used in a display device, the color reproduction range becomes narrow. However, in the present invention, a Mn activated oxynitride phosphor such as Mn activated ZnAl ₂ O ₄ or Mn activated γ-AlON phosphor is used as the green phosphor. The problem of overlapping body spectra is alleviated. This is due to the fact that the green phosphor used in the present invention has a narrow half-value width of the emission spectrum and an emission peak near the short wavelength as compared with the Eu-activated β-type SiAlON phosphor.

  In the semiconductor light emitting device 1 of the present invention, the mold resin 5 used for sealing the semiconductor light emitting element 2 is obtained by dispersing a phosphor in a translucent resin such as a silicone resin or an epoxy resin. The Mn-activated oxynitride phosphor (and the second phosphor (red phosphor) in some cases), which is the green phosphor described above, is included therein. In this case, as the phosphor to be dispersed, a phosphor mixture containing a red phosphor in addition to the green phosphor can be suitably used, and a blue phosphor may be further added as necessary. The mixing ratio of the phosphors to be dispersed is not particularly limited, and is appropriately determined so that when used in an image display device, for example, when a color filter is fully opened, a spectrum showing a desired white point is obtained on the screen. It is what is done.

  The present invention also provides an image display device using, as a backlight light source, the above-described semiconductor light emitting device of the present invention that emits white light. Here, FIG. 3A is an exploded perspective view schematically showing a preferred example of the image display device 21 of the present invention, and FIG. 3B is a liquid crystal display device shown in FIG. It is a disassembled perspective view which expands and shows 24. FIG. The image display device 21 in the example shown in FIG. 3A has a plurality (specifically six) of the semiconductor light emitting devices 1 in the example shown in FIG. 1 on the side surface of the transparent or translucent light guide plate 22. It is arranged. In the example shown in FIG. 3A, the semiconductor light emitting device 1 in the case where the phosphor of the present invention and the phosphor exhibiting red fluorescence are used in combination is shown. The image display device 21 in the example shown in FIG. 3A is also provided with a liquid crystal display unit 23 composed of a plurality of liquid crystal display devices 24 adjacent to the light guide plate 22 and from the semiconductor light emitting device 1. The emitted light 25 is scattered in the light guide plate 22 and irradiated as scattered light 26 to the entire surface of the liquid crystal display unit 23.

  As shown in the exploded perspective view of FIG. 3B, the liquid crystal display device 24 constituting the liquid crystal display unit 23 includes a polarizing plate 27, a transparent conductive film 28 (having a thin film transistor 28a), an alignment film 29a, and a liquid crystal. A layer 30, an alignment film 29b, an upper thin film electrode 31, a color filter 32 for displaying color pixels, and an upper polarizing plate 33 are sequentially stacked. The color filter 32 is divided into portions of a size corresponding to each pixel of the transparent conductive film 28, and transmits a red color filter 32r that transmits red light, a green color filter 32g that transmits green light, and a blue light. It is composed of a blue furnace color filter 32b.

  As shown in FIG. 3B, the image display device 21 of the present invention preferably includes filters that transmit red light, green light, and blue light, respectively. In this case, as the red color filter 32r and the green color filter 32g, a general filter having a transmission spectrum shown in FIG. 2 can be preferably used.

  As the blue color filter 32b, the image display device 21 of the present invention uses a maximum transmittance TI (max), a transmittance at 500 nm as TI (500), and a transmittance at 515 nm as TI (515). max), TI (500), and TI (515) satisfying the following conditional expressions (1) and (2) can be preferably used.

TI (500) / TI (max) ≦ 0.46 (1)
TI (515) / TI (max) ≦ 0.16 (2)
By using the blue color filter 32b that satisfies such conditions, when, for example, Mn activated ZnAl ₂ O ₄ or Mn activated γ-AlON is used as the Mn activated oxynitride phosphor, the blue color filter transmits green light. Since the ratio is reduced, the color reproduction range of green and blue of the liquid crystal display device is expanded. As such a blue color filter 32b, a blue color filter containing Pigment Blue (P.B.15: 6) as a blue pigment and Pigment Violet (P.V.23) as a purple pigment is suitably used. Above all, when the pigment blue (P.B.15: 6) and the pigment violet (P.V.23) are mixed at a weight ratio that satisfies the following conditional expression (3), the above-described conditional expression (1) And the blue color filter 32b satisfying (2) can be realized.

P. B. 15: 6 weight / P. V. 23 weight ≦ 0.25 (3)
EXAMPLES Hereinafter, although an Example and a comparative example are given and this invention is demonstrated in detail, this invention is not limited to these.

[1] Preparation of phosphor <Production example 1: Preparation of Mn-activated ZnAl ₂ O ₄ phosphor>
In order to synthesize a ZnAl ₂ O ₄ having a theoretical composition containing 1 mol% of Mn, the composition of zinc oxide powder 43.3 mass%, aluminum oxide powder 55.4 mass%, manganese carbonate powder 1.3 mass% A predetermined amount was weighed, mixed in ethanol using an alumina mortar and pestle, dried and ground again.

The obtained powder aggregate was put into an alumina boat and fired in air at a temperature of 1250 ° C. for 8 hours to obtain a precursor. The obtained precursor was further pulverized, put into an alumina boat again, and fired in a 5% H ₂ —Ar atmosphere for 4 hours to obtain a phosphor sample. The obtained phosphor sample was pulverized using an agate mortar to obtain phosphor powder. Powder X-ray diffraction measurement (XRD) using Cu Kα rays showed that all charts obtained from the phosphor powder had a ZnAl ₂ O ₄ structure. Further, as a result of irradiating the phosphor powder with a lamp emitting light having a wavelength of 365 nm, it was confirmed that the phosphor powder emitted green light.

  FIG. 4 is a graph showing the absorption (excitation) spectrum (FIG. 4 (a)) and emission spectrum (FIG. 4 (b)) of the obtained phosphor powder, where the vertical axis represents the emission intensity (arbitrary unit), the horizontal The axis is the wavelength (nm). In addition, the absorption (excitation) spectrum and emission spectrum of the phosphor powder shown in FIG. 4 are the results of measurement using F-4500 (manufactured by Hitachi, Ltd.). The absorption (excitation) spectrum was measured by scanning the intensity of nm which is an emission peak. The emission spectrum is obtained when excited with light of 450 nm. FIG. 4B shows that the phosphor produced according to this production example is efficiently excited by light having a wavelength of 420 to 460 nm, and particularly has a high excitation efficiency at 440 to 460 nm. Further, from FIG. 4A, it can be seen that the emission spectrum of the phosphor produced according to this production example has good wavelength matching with the green color filter whose transmittance is shown in FIG. The chromaticity coordinates of the emission spectrum shown in FIG. 4 were (u ′, v ′) = (0.052, 0.567), the peak wavelength was 515 nm, and the half width was 33 nm.

<Production Example 2: Preparation of Mn-activated γ-AlON phosphor>
In order to synthesize Al ₇ O ₉ N having a theoretical composition of 1 mol% of Mn, aluminum nitride powder 13.2 mass%, aluminum oxide powder 85.3 mass%, and manganese carbonate powder 1.5 mass % And weighed for 10 minutes or more using a mortar and pestle made of a silicon nitride sintered body to obtain a powder aggregate. The powder aggregate was naturally dropped into a boron nitride crucible having a diameter of 20 mm and a height of 20 mm.

  Next, the crucible was set in a graphite resistance heating type pressure electric furnace, nitrogen having a purity of 99.999% by volume was introduced to a pressure of 0.5 MPa, and then the temperature was increased to 1800 ° C. at 500 ° C./hour. The sample was warmed and held at that temperature for 2 hours to obtain a phosphor sample. The obtained phosphor sample was pulverized using an agate mortar to obtain phosphor powder. When the powder X-ray diffraction measurement (XRD) using Cu Kα ray was performed on the phosphor powder, all the charts obtained from the phosphor powder showed a γ-AlON structure. Further, as a result of irradiating the phosphor powder with a lamp emitting light having a wavelength of 365 nm, it was confirmed that the phosphor powder emitted green light.

  FIG. 5 is a graph showing the absorption (excitation) spectrum (FIG. 5 (a)) and emission spectrum (FIG. 5 (b)) of the obtained phosphor powder, where the vertical axis represents the emission intensity (arbitrary unit), the horizontal The axis is the wavelength (nm). In addition, the absorption (excitation) spectrum and emission spectrum of the phosphor powder shown in FIG. 5 are the results of measurement using F-4500 (manufactured by Hitachi, Ltd.). The absorption (excitation) spectrum was measured by scanning the intensity of nm which is an emission peak. The emission spectrum is obtained when excited with light of 450 nm. From FIG. 5B, it can be seen that the phosphor produced by this production example is efficiently excited by light of 420 to 460 nm, and in particular, the excitation efficiency is high at 440 to 460 nm. Further, from FIG. 5A, it can be seen that the emission spectrum of the phosphor produced according to this production example has good wavelength matching with the green color filter whose transmittance is shown in FIG. The chromaticity coordinates of the emission spectrum shown in FIG. 5 were (u ′, v ′) = (0.050, 0.572), the peak wavelength was 515 nm, and the half width was 33 nm.

<Comparative Production Example 1: Preparation of Eu-activated β sialon phosphor>
A predetermined amount was weighed so as to have a composition of α-type silicon nitride powder 95.82% by mass, aluminum nitride powder 3.37% by mass and europium oxide powder 0.81% by mass, and a mortar and pestle made of a silicon nitride sintered body, Was mixed for 10 minutes or more to obtain a powder aggregate. The powder aggregate was naturally dropped into a boron nitride crucible having a diameter of 20 mm and a height of 20 mm.

  Next, the crucible was set in a graphite resistance heating type pressure electric furnace, and after introducing nitrogen having a purity of 99.999 volume% to a pressure of 1 MPa, the temperature was raised to 1900 ° C. at 500 ° C. per hour. Furthermore, the phosphor sample was obtained by holding at that temperature for 8 hours. The obtained phosphor sample was pulverized using an agate mortar to obtain phosphor powder. When the powder X-ray diffraction measurement (XRD) using the Kα ray of Cu was performed on the phosphor powder, all the charts obtained from the phosphor powder showed a β-type sialon structure. Further, as a result of irradiating the phosphor powder with a lamp emitting light having a wavelength of 365 nm, it was confirmed that the phosphor powder emitted green light.

  FIG. 6 is a graph showing an emission spectrum of the obtained phosphor powder, where the vertical axis represents the emission intensity (arbitrary unit) and the horizontal axis represents the wavelength (nm). The emission spectrum of the phosphor powder shown in FIG. 6 is also a result of measurement using F-4500 (manufactured by Hitachi, Ltd.). Note that the emission spectrum shown in FIG. 6 is obtained when excited with light of 450 nm. The chromaticity coordinates of the emission spectrum shown in FIG. 6 were (u ′, v ′) = (0.129, 0.575), the peak wavelength was 540 nm, and the half width was 55 nm.

<Production Example 3: Preparation of Eu-activated CaAlSiN ₃ (CASN) phosphor>
A predetermined amount of aluminum nitride powder 29.741% by mass, α-type silicon nitride powder (33.925% by mass, calcium nitride powder 35.642% by mass, and europium nitride powder 0.692% by mass were weighed, A powder agglomerate was obtained by mixing for 10 minutes or more using a mortar and pestle made of ligated europium nitride, which was synthesized by nitriding metal europium in ammonia. Naturally dropped into a boron nitride crucible with a diameter of 20 mm and a height of 20 mm All the powder weighing, mixing, and forming steps maintain a nitrogen atmosphere with a moisture content of 1 ppm or less and oxygen of 1 ppm or less. Could be done in a glove box.

Next, the crucible is set in a graphite resistance heating type pressure electric furnace, nitrogen having a purity of 99.999% by volume is introduced to a pressure of 1 MPa, and the temperature is raised to 1800 ° C. at 500 ° C. per hour, A phosphor sample was obtained by holding at 1800 ° C. for 2 hours. The obtained phosphor sample was pulverized using an agate mortar to obtain phosphor powder. When the powder X-ray diffraction measurement (XRD) using Cu Kα ray was performed on the phosphor powder, it was found that the phosphor powder had a CaAlSiN ₃ crystal structure. Further, as a result of irradiating the phosphor powder with a lamp emitting light having a wavelength of 365 nm, it was confirmed that the phosphor powder emitted red light.

  FIG. 7 is a graph showing an emission spectrum of the obtained phosphor powder, where the vertical axis represents the emission intensity (arbitrary unit) and the horizontal axis represents the wavelength (nm). In addition, the emission spectrum of the phosphor powder shown in FIG. 7 is also a result of measurement using F-4500 (manufactured by Hitachi, Ltd.). Note that the emission spectrum shown in FIG. 7 is obtained when excited by light of 450 nm. The chromaticity coordinates of the emission spectrum shown in FIG. 7 were (u ′, v ′) = (0.460, 0.530), the peak wavelength was 650 nm, and the half width was 94 nm.

<Production Example 4: Preparation of Eu-activated Sr ₂ Si ₅ N ₈ phosphor>
A predetermined amount is weighed in 54.3% by weight of silicon nitride powder, 45.1% by weight of strontium nitride powder, and 0.6% by weight of europium nitride powder, and a mortar and pestle made of sintered silicon nitride are used for 10 minutes or more. By mixing, a powder aggregate was obtained. Europium nitride was synthesized by nitriding metal europium in ammonia. The powder aggregate was naturally dropped into a boron nitride crucible having a diameter of 20 mm and a height of 20 mm. The powder weighing, mixing, and forming steps were all performed in a glove box capable of maintaining a nitrogen atmosphere with a moisture content of 1 ppm or less and oxygen of 1 ppm or less.

Next, the crucible is set in a graphite resistance heating type pressure electric furnace, nitrogen having a purity of 99.999% by volume is introduced to a pressure of 1 MPa, and the temperature is raised to 1600 ° C. at 500 ° C. per hour, A phosphor sample was obtained by holding at 1600 ° C. for 2 hours. The obtained phosphor sample was pulverized using an agate mortar to obtain phosphor powder. When the powder X-ray diffraction measurement (XRD) using Cu Kα ray was performed on the phosphor powder, it was found that the phosphor powder had a structure of Sr ₂ Si ₅ N ₈ crystal. Further, as a result of irradiating the phosphor powder with a lamp emitting light having a wavelength of 365 nm, it was confirmed that the phosphor powder emitted red light.

  FIG. 8 is a graph showing an emission spectrum of the obtained phosphor powder, where the vertical axis represents the emission intensity (arbitrary unit) and the horizontal axis represents the wavelength (nm). The emission spectrum of the phosphor powder shown in FIG. 8 is also the result of measurement using F-4500 (manufactured by Hitachi, Ltd.). Note that the emission spectrum shown in FIG. 8 is obtained when excited with light of 450 nm. The chromaticity coordinates of the emission spectrum shown in FIG. 8 were (u ′, v ′) = (0.452, 0.532), the peak wavelength was 640 nm, and the half width was 106 nm.

<Production Example 5: Preparation of Eu-activated Ba ₂ Si ₅ N ₈ phosphor>
A predetermined amount is weighed in 44.1% by weight of silicon nitride powder, 55.5% by weight of barium nitride powder, and 0.4% by weight of europium nitride powder, using a mortar and pestle made of sintered silicon nitride for 10 minutes or more By mixing, a powder aggregate was obtained. Europium nitride was synthesized by nitriding metal europium in ammonia. The powder aggregate was naturally dropped into a boron nitride crucible having a diameter of 20 mm and a height of 20 mm. The powder weighing, mixing, and forming steps were all performed in a glove box capable of maintaining a nitrogen atmosphere with a moisture content of 1 ppm or less and oxygen of 1 ppm or less.

Next, the crucible is set in a graphite resistance heating type pressure electric furnace, nitrogen having a purity of 99.999% by volume is introduced to a pressure of 1 MPa, and the temperature is raised to 1600 ° C. at 500 ° C. per hour, A phosphor sample was obtained by holding at 1600 ° C. for 2 hours. The obtained phosphor sample was pulverized using an agate mortar to obtain phosphor powder. The phosphor powder was subjected to powder X-ray diffraction measurement (XRD) using Cu Kα rays, and it was found that the phosphor powder had a structure of Ba ₂ Si ₅ N ₈ crystal. Further, as a result of irradiating the phosphor powder with a lamp emitting light having a wavelength of 365 nm, it was confirmed that the phosphor powder emitted red light.

  FIG. 9 is a graph showing the emission spectrum of the obtained phosphor powder, where the vertical axis represents the emission intensity (arbitrary unit) and the horizontal axis represents the wavelength (nm). In addition, the emission spectrum of the phosphor powder shown in FIG. 9 is also a result of measurement using F-4500 (manufactured by Hitachi, Ltd.). Note that the emission spectrum shown in FIG. 9 is obtained when excited with light of 450 nm. The chromaticity coordinates of the emission spectrum shown in FIG. 9 were (u ′, v ′) = (0.464, 0.530), the peak wavelength was 650 nm, and the half width was 107 nm.

[2] Preparation of Blue Color Filter-Containing Dye <Production Examples 6-10: Preparation of Blue Color Filter Dye-Containing Paste>
As an acrylic resin, methacrylic acid, butyl acrylate, and butyl methacrylate were each dissolved in ethyl cellosolve, and azobisisobutyl nitrile was added to enhance solubility in a nitrogen atmosphere. This was reacted at a temperature of 70 ° C. for 5 hours, and the obtained resin was further diluted with ethyl cellosolve to obtain a diluted resin.

  Next, pigment blue (P.B.15: 6) and pigment violet (P.V.23), which are pigments, are mixed in the weight ratio shown in Table 1 to this diluted resin, and cyclohexane as a solvent is further mixed. And a dispersant were added. And this was knead | mixed and the pigment | dye containing paste used for a blue color filter was produced. Table 1 also shows TI (500) / TI (max) and TI (515) / TI (max) defined above for the color filter using the pigment-containing paste of each production example.

  Here, FIG. 10 is a graph obtained by standardizing the transmission spectrum with the maximum transmittance when a 2.5-μm-thick blue color filter is formed using the pigment-containing pastes manufactured in Production Examples 6 to 10, respectively. Yes, the vertical axis represents normalized transmittance, and the horizontal axis represents wavelength (nm).

[3] Fabrication of semiconductor light emitting device and image display device <Examples 1 to 5>
A semiconductor light emitting device 1 having the structure shown in FIG. 1 was produced. First, as phosphors to be dispersed in the mold resin 5, the Mn-activated ZnAl ₂ O ₄ phosphor of Production Example 1 and the Eu-activated CaAlSiN ₃ phosphor of Production Example 3 were mixed at a weight ratio shown in Table 2 below. A phosphor mixture was obtained. This phosphor mixture was mixed with a silicone resin at a weight ratio shown in Table 3 below and dispersed in the silicone resin to obtain a mold resin component. For the semiconductor light emitting element 2, an LED having an emission peak wavelength at 450 nm was used. Here, FIG. 11 shows an emission spectrum of the semiconductor light emitting device 1 manufactured in Example 1, FIG. 12 shows an emission spectrum of the semiconductor light emitting device 1 manufactured in Example 2, and FIG. 13 shows a semiconductor manufactured in Example 3. FIG. 14 is a graph showing the emission spectrum of the semiconductor light emitting device 1 manufactured in Example 4, FIG. 15 is a graph showing the emission spectrum of the semiconductor light emitting device 1 manufactured in Example 5, and FIG. 11 to 15, the vertical axis represents the emission intensity (arbitrary unit) and the horizontal axis represents the wavelength (nm). In addition, when the emission spectrum shown in FIGS. 11-15 shows the value measured using MCPD-2000 (made by Otsuka Electronics), and comprised the image display apparatus of the structure shown in Examples 6-10 mentioned later. In addition, the white point is adjusted to display the vicinity of white having a color temperature of 10,000K.

<Examples 6 to 10>
An image display device having the structure shown in FIG. 3 was produced. Details are as follows. The semiconductor light emitting devices of Examples 1 to 5 were used as the backlight light source in the combinations shown in Table 4, the green and red color filters having the transmittance shown in FIG. 2 were used, and the blue color filter was manufactured in Production Example 6. No. 10 to No. 10 were used in the combinations shown in Table 4.

<Examples 11 to 15>
A semiconductor light emitting device 1 having the structure shown in FIG. 1 was produced. First, as phosphors dispersed in the mold resin 5, the Mn-activated ZnAl ₂ O ₄ phosphor of Production Example 1 and the Eu-activated Sr ₂ Si ₅ N ₈ phosphor of Production Example 4 are weight ratios shown in Table 5. A mixed phosphor mixture emitting white light was used. This phosphor mixture was dispersed in the silicone resin so as to have a ratio shown in Table 6 with that of the silicone resin to obtain a mold resin component. For the semiconductor light emitting element 2, an LED having an emission peak wavelength at 450 nm was used. Here, FIG. 16 shows the emission spectrum of the semiconductor light emitting device 1 fabricated in Example 11, FIG. 17 shows the emission spectrum of the semiconductor light emitting device 1 fabricated in Example 12, and FIG. 18 shows the semiconductor fabricated in Example 13. FIG. 19 is a graph showing the emission spectrum of the semiconductor light-emitting device 1 manufactured in Example 14, and FIG. 20 is a graph showing the emission spectrum of the semiconductor light-emitting device 1 manufactured in Example 15. 16 to 20, in each case, the vertical axis represents emission intensity (arbitrary unit), and the horizontal axis represents wavelength (nm). In addition, when the emission spectrum shown in FIGS. 16-20 shows the value measured using MCPD-2000 (made by Otsuka Electronics), and comprised the image display apparatus of the structure shown in Examples 16-20 mentioned later. In addition, the white point is adjusted to display the vicinity of white having a color temperature of 10,000K.

<Examples 16 to 20>
An image display device having the structure shown in FIG. 3 was produced. As the backlight light source, the semiconductor light emitting devices of Examples 11 to 15 were used in the combinations shown in Table 4, green and red color filters having the transmittance shown in FIG. No. 10 to No. 10 were used in combinations shown in Table 10.

<Examples 21 to 25>
A semiconductor light emitting device having the structure shown in FIG. 1 was produced. First, as phosphors dispersed in the mold resin 5, the Mn-activated ZnAl ₂ O ₄ phosphor of Production Example 1 and the Eu-activated Ba ₂ Si ₅ N ₈ phosphor of Production Example 5 are weight ratios shown in Table 7. A mixed phosphor mixture emitting white light was used. This phosphor mixture was dispersed in a silicone resin so as to have a ratio shown in Table 7 with respect to the silicone resin, and used as a mold resin component. For the semiconductor light emitting element 2, an LED having an emission peak wavelength at 450 nm was used. Here, FIG. 21 shows the emission spectrum of the semiconductor light-emitting device 1 fabricated in Example 21, FIG. 22 shows the emission spectrum of the semiconductor light-emitting device 1 fabricated in Example 22, and FIG. 23 shows the semiconductor fabricated in Example 23. FIG. 24 is a graph showing the emission spectrum of the semiconductor light emitting device 1 fabricated in Example 24, and FIG. 25 is a graph showing the emission spectrum of the semiconductor light emitting device 1 fabricated in Example 25. In any of FIGS. 21 to 25, the vertical axis represents the emission intensity (arbitrary unit) and the horizontal axis represents the wavelength (nm). 21 to 25 show values measured using MCPD-2000 (manufactured by Otsuka Electronics Co., Ltd.), and when an image display device having a configuration shown in Examples 26 to 30 described later is configured. The white point is adjusted to display the vicinity of white with a color temperature of 10,000K.

<Examples 26 to 30>
An image display device having the structure shown in FIG. 3 was produced. The semiconductor light emitting devices of Examples 21 to 25 are used as the backlight light source in the combinations shown in Table 4, and the green and red color filters have the transmittance shown in FIG. 2, and the blue color filter has Production Example 6 No. 10 to No. 10 were used in the combinations shown in Table 4.

<Examples 31-35>
A semiconductor light emitting device 1 having the structure shown in FIG. 1 was produced. First, as phosphors to be dispersed in the mold resin 5, the Mn-activated γ-AlON phosphor of Production Example 2 and the Eu-activated CaAlSiN ₃ phosphor of Production Example 3 were combined in the weight ratio shown in Table 9 below. By mixing, a phosphor mixture was obtained. This phosphor mixture was mixed with a silicone resin at a weight ratio shown in Table 10 below, and dispersed in the silicone resin to obtain a mold resin component. For the semiconductor light emitting element 2, an LED having an emission peak wavelength at 450 nm was used. Here, FIG. 26 shows an emission spectrum of the semiconductor light emitting device 1 manufactured in Example 31, FIG. 27 shows an emission spectrum of the semiconductor light emitting device 1 manufactured in Example 32, and FIG. 28 shows a semiconductor manufactured in Example 33. 29 is a graph showing the emission spectrum of the semiconductor light emitting device 1 manufactured in Example 34, and FIG. 30 is a graph showing the emission spectrum of the semiconductor light emitting device 1 manufactured in Example 35. 26 to 30, in each case, the vertical axis represents emission intensity (arbitrary unit), and the horizontal axis represents wavelength (nm). The emission spectra shown in FIGS. 26 to 30 show values measured using MCPD-2000 (manufactured by Otsuka Electronics Co., Ltd.), and when an image display device having the configuration shown in Examples 36 to 40 described later is configured. The white point is adjusted to display the vicinity of white with a color temperature of 10,000K.

<Examples 36 to 40>
An image display device having the structure shown in FIG. 3 was produced. Details are as follows. The semiconductor light-emitting devices of Examples 31 to 35 were used as the backlight light source in the combinations shown in Table 11, the green and red color filters exhibiting the transmittance shown in FIG. 2, and the blue color filter was manufactured in Production Example 6. No. 10 to No. 10 were used in the combinations shown in Table 11.

<Examples 41 to 45>
A semiconductor light emitting device 1 having the structure shown in FIG. 1 was produced. First, as phosphors to be dispersed in the mold resin 5, the Mn-activated γ-AlON phosphor of Production Example 1 and the Eu-activated Sr ₂ Si ₅ N ₈ phosphor of Production Example 4 are shown in Table 12 in weight. A phosphor mixture emitting white light mixed at a ratio was used. This phosphor mixture was dispersed in a silicone resin so as to have a ratio of silicone resin to Table 13, and used as a mold resin component. For the semiconductor light emitting element 2, an LED having an emission peak wavelength at 450 nm was used. Here, FIG. 31 shows the emission spectrum of the semiconductor light emitting device 1 fabricated in Example 41, FIG. 32 shows the emission spectrum of the semiconductor light emitting device 1 fabricated in Example 42, and FIG. 33 shows the semiconductor fabricated in Example 43. FIG. 34 is a graph showing the emission spectrum of the semiconductor light emitting device 1 fabricated in Example 44, and FIG. 35 is a graph showing the emission spectrum of the semiconductor light emitting device 1 fabricated in Example 45, respectively. In 31 to 35, the vertical axis represents emission intensity (arbitrary unit), and the horizontal axis represents wavelength (nm). The emission spectra shown in FIGS. 31 to 35 show values measured using MCPD-2000 (manufactured by Otsuka Electronics Co., Ltd.), and when an image display device having a configuration shown in Examples 46 to 50 described later is configured. The white point is adjusted to display the vicinity of white with a color temperature of 10,000K.

<Examples 46 to 50>
An image display device having the structure shown in FIG. 3 was produced. The semiconductor light emitting devices of Examples 41 to 45 were used as the backlight light source in the combinations shown in Table 11, the green and red color filters exhibiting the transmittance shown in FIG. 2, and the blue color filter was manufactured in Production Example 6. No. 10 to No. 10 were used in the combinations shown in Table 11.

<Examples 51-55>
A semiconductor light emitting device having the structure shown in FIG. 1 was produced. First, the weight as a phosphor to be dispersed in the mold resin 5, shown Mn-activated gamma-AlON phosphor Production Example 2 and the Eu-activated Ba ₂ Si ₅ N ₈ phosphor case of Preparation Example 5 in Table 14 A phosphor mixture emitting white light mixed at a ratio was used. This phosphor mixture was dispersed in the silicone resin so as to have the ratio of silicone resin to Table 15, and used as a mold resin component. For the semiconductor light emitting element 2, an LED having an emission peak wavelength at 450 nm was used. Here, FIG. 36 shows an emission spectrum of the semiconductor light emitting device 1 manufactured in Example 51, FIG. 37 shows an emission spectrum of the semiconductor light emitting device 1 manufactured in Example 52, and FIG. 38 shows a semiconductor manufactured in Example 53. 39 is a graph showing the emission spectrum of the semiconductor light-emitting device 1 manufactured in Example 54, and FIG. 40 is a graph showing the emission spectrum of the semiconductor light-emitting device 1 manufactured in Example 55. In each of 36 to 40, the vertical axis represents the emission intensity (arbitrary unit) and the horizontal axis represents the wavelength (nm). The emission spectra shown in FIGS. 36 to 40 show values measured using MCPD-2000 (manufactured by Otsuka Electronics Co., Ltd.), and when an image display device having a configuration shown in Examples 56 to 60 described later is configured. The white point is adjusted to display the vicinity of white with a color temperature of 10,000K.

<Examples 56 to 60>
An image display device having the structure shown in FIG. 3 was produced. The semiconductor light emitting devices of Examples 51 to 55 are used as the backlight light source in the combinations shown in Table 11, the green and red color filters exhibiting the transmittance shown in FIG. 2, and the blue color filter is Production Example 6 No. 10 to No. 10 were used in the combinations shown in Table 11.

<Comparative Examples 1-5>
A semiconductor light emitting device having the structure shown in FIG. 1 was produced. First, as phosphors to be dispersed in the mold resin, the Eu-activated β-type SiAlON phosphor of Comparative Production Example 1 and the Eu-activated CaAlSiN ₃ phosphor of Production Example 2 were mixed at a weight ratio shown in Table 16. A phosphor mixture emitting white light was used. This phosphor mixture was dispersed in a silicone resin so as to have a ratio of silicone resin to Table 17, and used as a mold resin component. Moreover, LED which has a light emission peak wavelength in 450 nm was used for the semiconductor light-emitting device. Here, FIG. 41 shows an emission spectrum of the semiconductor light emitting device manufactured in Comparative Example 1, FIG. 42 shows an emission spectrum of the semiconductor light emitting device manufactured in Comparative Example 2, and FIG. 43 shows a semiconductor light emitting device manufactured in Comparative Example 3. 44 is a graph showing the emission spectrum of the semiconductor light emitting device produced in Comparative Example 4, and FIG. 45 is a graph showing the emission spectrum of the semiconductor light emitting device produced in Comparative Example 5, respectively. In either case, the vertical axis represents emission intensity (arbitrary unit), and the horizontal axis represents wavelength (nm). In addition, when the emission spectrum shown to FIGS. 41-45 shows the value measured using MCPD-2000 (made by Otsuka Electronics), and comprised the liquid crystal display device of the structure shown by the comparative examples 6-10 mentioned later. The white point is adjusted to display the vicinity of white with a color temperature of 10,000K.

<Comparative Examples 6 to 10>
An image display device having the structure shown in FIG. 3 was produced. The semiconductor light emitting devices of Comparative Examples 1 to 5 were used as the backlight light source in the combinations shown in Table 11, green and red color filters exhibiting the transmittance shown in FIG. 3, and blue color filters were manufactured in Production Example 6. No. 10 to No. 10 were used in the combinations shown in Table 11.

  In Table 11 described above, in the image display devices shown in Examples 36 to 40, 46 to 50, 56 to 60, and Comparative Examples 6 to 10, the NTSC ratio and the white point in the CIE 1976 chromaticity coordinates of the on-screen display light. The chromaticity coordinates of the red point, the green point, and the blue point are also shown. Here, the red point, the green point, and the blue point are chromaticity points on the display when only light that passes through the red color filter, the green color filter, and the blue color filter is displayed on the display, respectively. A point is a chromaticity point on the display when all color filters are fully opened. The chromaticity points and NTSC ratios shown in Table 11 were measured using MCPD-2000 manufactured by Otsuka Electronics.

  From Table 11, when the image display apparatus shown by the Example uses the same color filter as the image display apparatus shown by the comparative example, the green point and the red point show a deeper color. I understand that. This is because the Mn-activated γ-AlON phosphor of Production Example 2 emits light in a deeper green color than the β-type SiAlON of Production Example 3, and the color overlap with the red phosphor is small. In particular, when Examples 38 to 40, 58 to 60, and Comparative Examples 8 to 10 using the same color filter are compared with each other, the NTSC ratio of each of the Examples is wider. This is due to the use of a blue color filter whose transmission spectrum satisfies the above conditional expressions (1) and (2).

  It should be understood that the embodiments and examples disclosed herein are illustrative and non-restrictive in every respect. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

It is sectional drawing which shows typically the semiconductor light-emitting device 1 of a preferable example of this invention. FIG. 2 is a transmission spectrum of a green color filter and a red color filter that are preferably used in the liquid crystal display device of the present invention. In FIG. 2, the vertical axis represents transmittance (%), the horizontal axis represents wavelength (nm), and the solid line represents green color. The transmission spectrum of the filter and the broken line indicate the transmission spectrum of the red color filter. FIG. 3A is an exploded perspective view schematically showing a preferred example of the image display device 21 of the present invention, and FIG. 3B is an enlarged view of the liquid crystal display device 24 shown in FIG. It is a disassembled perspective view shown. 4A is an absorption (excitation) spectrum of the phosphor powder obtained in Production Example 1, FIG. 4B is a graph showing the emission spectrum, the vertical axis is the emission intensity (arbitrary unit), and the horizontal axis. Is the wavelength (nm). 5 (a) is an absorption (excitation) spectrum of the phosphor powder obtained in Production Example 2, FIG. 5 (b) is a graph showing an emission spectrum, the vertical axis is emission intensity (arbitrary unit), and the horizontal axis. Is the wavelength (nm). It is a graph which shows the emission spectrum of the fluorescent substance powder obtained by the comparative manufacture example 1, a vertical axis | shaft is light emission intensity (arbitrary unit), and a horizontal axis is a wavelength (nm). It is a graph which shows the emission spectrum of the fluorescent substance powder obtained by manufacture example 3, a vertical axis | shaft is light emission intensity (arbitrary unit), and a horizontal axis is a wavelength (nm). It is a graph which shows the emission spectrum of the fluorescent substance powder obtained by manufacture example 4, a vertical axis | shaft is light emission intensity (arbitrary unit), and a horizontal axis is a wavelength (nm). It is a graph which shows the emission spectrum of the fluorescent substance powder obtained by manufacture example 5, a vertical axis | shaft is light emission intensity (arbitrary unit), and a horizontal axis is a wavelength (nm). It is the graph which normalized the transmission spectrum at the time of comprising a 2.5-micrometer-thick blue color filter using the pigment-containing paste each manufactured in manufacture examples 6-10, and the vertical axis is normalized The transmittance and the horizontal axis are wavelength (nm). 2 is a graph showing an emission spectrum of the semiconductor light emitting device 1 manufactured in Example 1, where the vertical axis represents emission intensity (arbitrary unit) and the horizontal axis represents wavelength (nm). It is a graph which shows the emission spectrum of the semiconductor light-emitting device 1 produced in Example 2, a vertical axis | shaft is light emission intensity (arbitrary unit), and a horizontal axis is a wavelength (nm). It is a graph which shows the emission spectrum of the semiconductor light-emitting device 1 produced in Example 3, a vertical axis | shaft is light emission intensity (arbitrary unit), and a horizontal axis is a wavelength (nm). It is a graph which shows the emission spectrum of the semiconductor light-emitting device 1 produced in Example 4, a vertical axis | shaft is light emission intensity (arbitrary unit), and a horizontal axis is a wavelength (nm). It is a graph which shows the emission spectrum of the semiconductor light-emitting device 1 produced in Example 5, a vertical axis | shaft is light emission intensity (arbitrary unit), and a horizontal axis is a wavelength (nm). It is a graph which shows the emission spectrum of the semiconductor light-emitting device 1 produced in Example 11, a vertical axis | shaft is light emission intensity (arbitrary unit), and a horizontal axis is a wavelength (nm). It is a graph which shows the emission spectrum of the semiconductor light-emitting device 1 produced in Example 12, a vertical axis | shaft is light emission intensity (arbitrary unit), and a horizontal axis is a wavelength (nm). It is a graph which shows the emission spectrum of the semiconductor light-emitting device 1 produced in Example 13, a vertical axis | shaft is light emission intensity (arbitrary unit), and a horizontal axis is a wavelength (nm). It is a graph which shows the emission spectrum of the semiconductor light-emitting device 1 produced in Example 14, a vertical axis | shaft is light emission intensity (arbitrary unit), and a horizontal axis is a wavelength (nm). It is a graph which shows the emission spectrum of the semiconductor light-emitting device 1 produced in Example 15, a vertical axis | shaft is light emission intensity (arbitrary unit), and a horizontal axis is a wavelength (nm). It is a graph which shows the emission spectrum of the semiconductor light-emitting device 1 produced in Example 21, a vertical axis | shaft is light emission intensity (arbitrary unit), and a horizontal axis is a wavelength (nm). It is a graph which shows the emission spectrum of the semiconductor light-emitting device 1 produced in Example 22, a vertical axis | shaft is light emission intensity (arbitrary unit), and a horizontal axis is a wavelength (nm). It is a graph which shows the emission spectrum of the semiconductor light-emitting device 1 produced in Example 23, a vertical axis | shaft is light emission intensity (arbitrary unit), and a horizontal axis is a wavelength (nm). It is a graph which shows the emission spectrum of the semiconductor light-emitting device 1 produced in Example 24, a vertical axis | shaft is light emission intensity (arbitrary unit), and a horizontal axis is a wavelength (nm). It is a graph which shows the emission spectrum of the semiconductor light-emitting device 1 produced in Example 25, a vertical axis | shaft is light emission intensity (arbitrary unit), and a horizontal axis is a wavelength (nm). It is a graph which shows the emission spectrum of the semiconductor light-emitting device 1 produced in Example 31, a vertical axis | shaft is light emission intensity (arbitrary unit), and a horizontal axis is a wavelength (nm). It is a graph which shows the emission spectrum of the semiconductor light-emitting device 1 produced in Example 32, a vertical axis | shaft is light emission intensity (arbitrary unit), and a horizontal axis is a wavelength (nm). It is a graph which shows the emission spectrum of the semiconductor light-emitting device 1 produced in Example 33, a vertical axis | shaft is light emission intensity (arbitrary unit), and a horizontal axis is a wavelength (nm). It is a graph which shows the emission spectrum of the semiconductor light-emitting device 1 produced in Example 34, a vertical axis | shaft is light emission intensity (arbitrary unit), and a horizontal axis is a wavelength (nm). It is a graph which shows the emission spectrum of the semiconductor light-emitting device 1 produced in Example 35, a vertical axis | shaft is light emission intensity (arbitrary unit), and a horizontal axis is a wavelength (nm). It is a graph which shows the emission spectrum of the semiconductor light-emitting device 1 produced in Example 41, a vertical axis | shaft is light emission intensity (arbitrary unit), and a horizontal axis is a wavelength (nm). It is a graph which shows the emission spectrum of the semiconductor light-emitting device 1 produced in Example 42, a vertical axis | shaft is light emission intensity (arbitrary unit), and a horizontal axis is a wavelength (nm). It is a graph which shows the emission spectrum of the semiconductor light-emitting device 1 produced in Example 43, a vertical axis | shaft is light emission intensity (arbitrary unit), and a horizontal axis is a wavelength (nm). It is a graph which shows the emission spectrum of the semiconductor light-emitting device 1 produced in Example 44, a vertical axis | shaft is light emission intensity (arbitrary unit), and a horizontal axis is a wavelength (nm). It is a graph which shows the emission spectrum of the semiconductor light-emitting device 1 produced in Example 45, a vertical axis | shaft is light emission intensity (arbitrary unit), and a horizontal axis is a wavelength (nm). It is a graph which shows the emission spectrum of the semiconductor light-emitting device 1 produced in Example 51, a vertical axis | shaft is light emission intensity (arbitrary unit), and a horizontal axis is a wavelength (nm). It is a graph which shows the emission spectrum of the semiconductor light-emitting device 1 produced in Example 52, a vertical axis | shaft is light emission intensity (arbitrary unit), and a horizontal axis is a wavelength (nm). It is a graph which shows the emission spectrum of the semiconductor light-emitting device 1 produced in Example 53, a vertical axis | shaft is light emission intensity (arbitrary unit), and a horizontal axis is a wavelength (nm). It is a graph which shows the emission spectrum of the semiconductor light-emitting device 1 produced in Example 54, a vertical axis | shaft is light emission intensity (arbitrary unit), and a horizontal axis is a wavelength (nm). It is a graph which shows the emission spectrum of the semiconductor light-emitting device 1 produced in Example 55, a vertical axis | shaft is light emission intensity (arbitrary unit), and a horizontal axis is a wavelength (nm). It is a graph which shows the emission spectrum of the semiconductor light-emitting device produced in the comparative example 1, a vertical axis | shaft is light emission intensity (arbitrary unit), and a horizontal axis is a wavelength (nm). It is a graph which shows the emission spectrum of the semiconductor light-emitting device produced by the comparative example 2, a vertical axis | shaft is light emission intensity (arbitrary unit), and a horizontal axis is a wavelength (nm). It is a graph which shows the emission spectrum of the semiconductor light-emitting device produced in the comparative example 3, a vertical axis | shaft is light emission intensity (arbitrary unit), and a horizontal axis is a wavelength (nm). It is a graph which shows the emission spectrum of the semiconductor light-emitting device produced in the comparative example 4, a vertical axis | shaft is light emission intensity (arbitrary unit), and a horizontal axis is a wavelength (nm). It is a graph which shows the emission spectrum of the semiconductor light-emitting device produced in the comparative example 5, a vertical axis | shaft is light emission intensity (arbitrary unit), and a horizontal axis is a wavelength (nm).

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 Semiconductor light-emitting device, 2 Semiconductor light-emitting device, 3 Printed wiring board, 4 Resin frame, 5 Mold resin, 6 InGaN layer, 7 p side electrode, 8 n side electrode, 9 n electrode part, 10 Adhesive, 11 p electrode part , 12 metal wire, 21 liquid crystal display device, 22 light guide plate, 23 liquid crystal display unit, 24 liquid crystal display device, 25 outgoing light, 26 scattered light, 27 polarizing plate, 28 transparent conductive film, 28a thin film transistor, 29a alignment film, 29b alignment Film, 30 liquid crystal layer, 31 upper thin film electrode, 32 color filter, 33 upper polarizing plate.

Claims (15)

  A semiconductor light emitting device that emits excitation light and a green phosphor that absorbs the excitation light and emits green light, wherein the green phosphor is a Mn-activated oxide phosphor or a Mn-activated oxynitride phosphor Light emitting device.   The semiconductor light-emitting device according to claim 1, wherein a half-value width of an emission spectrum of the green phosphor is 40 nm or less. The semiconductor light-emitting device according to claim 1, wherein the Mn-activated oxide phosphor is Mn-activated ZnAl ₂ O ₄ .   The semiconductor light-emitting device according to claim 1, wherein the Mn-activated oxynitride phosphor is Mn-activated γ-AlON.   The semiconductor light-emitting device according to claim 1, wherein the emission peak wavelength of the semiconductor light-emitting element is 430 to 460 nm.   The semiconductor light-emitting device according to claim 5, wherein the emission peak wavelength of the semiconductor light-emitting element is 440 to 450 nm.   The semiconductor light-emitting device according to claim 1, comprising a second phosphor that emits red light when irradiated with the excitation light.   The semiconductor light-emitting device according to claim 1, wherein the second phosphor emits red light having a peak wavelength in a wavelength range of 620 to 670 nm by irradiation of the excitation light.   The semiconductor light-emitting device according to claim 7 or 8, wherein a half-value width of an emission spectrum of the second phosphor is 110 nm or less.   The semiconductor light-emitting device according to claim 9, wherein a half-value width of an emission spectrum of the second phosphor is 95 nm or less. The semiconductor light-emitting device according to claim 7, wherein the second phosphor includes Eu-activated CaAlSiN ₃ . The semiconductor light-emitting device according to claim 7, wherein the second phosphor includes Eu-activated M ₂ Si ₅ N ₈ (M = Ba, Sr). The semiconductor light emitting device according to any one of claims 1 to 12, which emits white light as a backlight light source,
A liquid crystal panel that modulates the white light based on a video signal and emits the white light as display light;
An image display device comprising a blue color filter that selectively transmits blue light of the white light,
In the transmission spectrum characteristics of the blue color filter, TI (max) is the maximum transmittance of the blue color filter, TI (500) is the transmittance at 500 nm, and TI (515) is the transmittance at 515 nm. max), TI (500), and TI (515) satisfy the following conditional expressions (1) and (2).
TI (500) / TI (max) ≦ 0.46 (1)
TI (515) / TI (max) ≦ 0.16 (2)   The image display according to claim 13, wherein the blue color filter is configured to include pigment blue (P.B.15: 6) as a blue pigment and pigment violet (P.V.23) as a violet pigment. apparatus. In the blue color filter, the pigment blue (P.B.15: 6) and the pigment violet (P.V.23) are mixed in a weight ratio that satisfies the following conditional expression (3). The image display device described in 1.
P. B. 15: 6 weight / P. V. 23 weight ≦ 0.25 (3)

Images