JP2009200181A - Substrate processing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate processing method that can easily and securely suppress production of foreign matters on a wafer. <P>SOLUTION: A carbon tetrafluoride gas is supplied into a reaction chamber 15 containing the wafer W to generate plasma, and after a polysilicon layer on a surface of the wafer W is subjected to plasma etching using the plasma, a chlorine gas and then an ammonia gas are supplied into the reaction chamber 15. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a substrate processing method, and more particularly to a substrate processing method for processing a substrate using a gas containing fluorine atoms and a gas containing nitrogen atoms.

  When a desired processing is performed using a processing gas on a semiconductor device wafer (hereinafter simply referred to as a “wafer”) as a substrate in the processing container, the processing gas and water present in the processing container are exposed to the wafer surface, Specifically, a reaction product is generated by reacting with silicon (Si). When these reaction products remain on the wafer as foreign matter, a wiring short circuit occurs in a product manufactured from the wafer, for example, a semiconductor device, and the yield of the semiconductor device is reduced.

In particular, water and fluorine atoms cause foreign substances to be generated on the wafer surface with a considerable probability. For example, when carbon tetrafluoride (CF ₄ ) gas is supplied to the wafer, if water remains on the wafer, the fluorine is generated on the wafer by a chemical reaction between water and fluorine atoms derived from carbon tetrafluoride. Hydrogen fluoride (HF) is produced. Hydrogen fluoride has extremely high reactivity. For example, when ammonia (NH ₃ ) gas is supplied as a cleaning gas toward the wafer, a chemical reaction represented by the following formula (1) occurs, and a complex as a reaction product is formed in the wafer. Generated on the surface. Then, a chemical reaction represented by the following formula (2) occurs continuously, silicon hydroxide (SiOH) is generated on the wafer surface, and the silicon hydroxide remains on the wafer as a foreign substance.

6HF + 2NH ₃ + Si → (NH ₄ ) ₂ SiF ₆ + 2H ₂ (1)
2 (NH ₄ ) ₂ SiF ₆ + 8NH ₃ + 6H ₂ O
→ 2SiOH + 12NH ₄ F + 2O ₂ + H ₂ (2)
Therefore, conventionally, it has been required to remove water and fluorine atoms from the wafer in order to suppress the generation of foreign matters on the wafer. In order to cope with this, for example, as a method of removing fluorine atoms on the wafer, a method of irradiating the wafer with vacuum ultraviolet light in an inert gas atmosphere or a vacuum atmosphere (see, for example, Patent Document 1) is disclosed. Has been.
JP 7-335602 A

  However, the above-described method of irradiating vacuum ultraviolet light requires equipment for irradiating vacuum ultraviolet light, but water on the wafer cannot be positively removed. It is difficult to suppress it simply and reliably. In addition, the photoresist film formed on the wafer is altered by irradiating the wafer with vacuum ultraviolet light. Therefore, a semiconductor device is manufactured from a wafer in which foreign matter remains on the surface or a wafer in which the photoresist film is altered, and there is a problem that the yield of the manufactured semiconductor device is reduced.

  An object of the present invention is to provide a substrate processing method capable of suppressing a decrease in yield of semiconductor devices manufactured from a substrate.

  In order to achieve the above object, the substrate processing method according to claim 1 is a substrate processing method for processing a substrate in a processing container, wherein a fluorine supply step of supplying a gas containing fluorine atoms into the processing container is provided. And a chlorine supply step for supplying chlorine gas into the processing vessel, and a nitrogen supply step for supplying a gas containing nitrogen atoms into the processing vessel.

  The substrate processing method according to claim 2 is characterized in that, in the substrate processing method according to claim 1, the temperature of the substrate is maintained at 20 ° C. or higher in the chlorine supply step.

  The substrate processing method according to claim 3 is the substrate processing method according to claim 1 or 2, wherein the substrate is heated to 200 ° C. or more in the chlorine supply step.

  A substrate processing method according to a fourth aspect is the substrate processing method according to any one of the first to third aspects, wherein the substrate is subjected to plasma processing in the fluorine supply step.

  5. The substrate processing method according to claim 5, wherein plasma is not used in the chlorine supply step in the substrate processing method according to any one of claims 1 to 4. 2. The substrate processing method according to item 1.

  The substrate processing method according to claim 6 is the substrate processing method according to any one of claims 1 to 5, wherein the gas containing fluorine atoms is a fluorocarbon-based gas.

  The substrate processing method according to claim 7 is the substrate processing method according to any one of claims 1 to 6, wherein the gas containing nitrogen atoms is ammonia gas.

  According to the substrate processing method of the first aspect, the gas containing fluorine atoms is supplied into the processing container, the chlorine gas is supplied, and the gas containing nitrogen atoms is further supplied. When water remains on the substrate and a gas containing fluorine atoms is supplied, hydrogen fluoride is generated on the substrate. After that, chlorine gas is supplied. Reacts with gas to hydrogen chloride. Since the boiling point of hydrogen chloride is significantly lower than that of hydrogen fluoride and hydrogen chloride is immediately vaporized, it can be easily removed from the substrate. For example, even if water remains on the substrate when hydrogen fluoride is generated, the water reacts with chlorine gas to form hydrogen chloride, so that it can be easily removed from the substrate. That is, when water remains on the substrate, even if a gas containing fluorine atoms is supplied toward the substrate to generate hydrogen fluoride, the hydrogen fluoride is converted into hydrogen chloride and is Therefore, the generation of foreign matters on the substrate due to the reaction between hydrogen fluoride and a gas containing nitrogen atoms can be easily and easily suppressed. Similarly, since water remaining on the substrate when hydrogen fluoride is generated is also converted into hydrogen chloride, the generation of foreign matters on the substrate due to water can be easily and easily suppressed. Furthermore, since it is not necessary to irradiate the substrate with vacuum ultraviolet light in order to remove fluorine, it is possible to prevent alteration of the photoresist film on the substrate. As a result, it is possible to suppress a decrease in the yield of semiconductor devices manufactured from the substrate.

  According to the substrate processing method of the second aspect, the temperature of the substrate at the time of supplying the chlorine gas is maintained at 20 ° C. or higher. The boiling point of hydrogen fluoride is about 19.5 ° C. under atmospheric pressure, and the substrate temperature when supplying chlorine gas is higher than the boiling point of hydrogen fluoride. Even if the reaction hydrogen fluoride remains, the unreacted hydrogen fluoride can be reliably vaporized. Therefore, it is possible to reliably suppress a decrease in the yield of semiconductor devices manufactured from the substrate.

  According to the substrate processing method of claim 3, since the substrate is heated to 200 ° C. or higher when supplying chlorine gas, the temperature of the substrate when supplying chlorine gas is sufficiently higher than the boiling point of hydrogen fluoride. Even when chlorine gas and unreacted hydrogen fluoride remain when chlorine gas is supplied, the unreacted hydrogen fluoride can be more reliably vaporized. Therefore, it is possible to more reliably suppress a decrease in the yield of semiconductor devices manufactured from the substrate.

  According to the substrate processing method of the fourth aspect, since the substrate is subjected to plasma processing in the fluorine supply step, desired processing can be performed on the substrate.

  According to the substrate processing method of the fifth aspect, since plasma is not used in the chlorine supply step, it is possible to prevent unnecessary damage to the substrate.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

  First, a substrate processing apparatus to which a substrate processing method according to an embodiment of the present invention is applied will be described.

  FIG. 1 is a cross-sectional view showing a schematic configuration of a substrate processing apparatus to which the substrate processing method according to the present embodiment is applied. This substrate processing apparatus is configured to perform plasma etching on a wafer as a substrate.

  In FIG. 1, the substrate processing apparatus 10 includes, for example, a chamber 11 that accommodates a wafer W having a diameter of 300 mm, and a columnar susceptor 12 on which the wafer W is placed is disposed. In the substrate processing apparatus 10, the side exhaust path 13 that functions as a flow path for discharging the gas above the susceptor 12 out of the chamber 11 is formed by the inner wall of the chamber 11 and the side surface of the susceptor 12. An exhaust plate 14 is disposed in the middle of the side exhaust path 13.

  The exhaust plate 14 is a plate-like member having a large number of holes, and functions as a partition plate that partitions the chamber 11 into an upper part and a lower part. Plasma is generated in the upper part (hereinafter referred to as “reaction chamber”) 15 (processing vessel) of the chamber 11 partitioned by the exhaust plate 14. Further, an exhaust pipe 17 that exhausts gas in the chamber 11 is connected to a lower portion 16 (hereinafter referred to as “exhaust chamber (manifold)”) of the chamber 11. The exhaust plate 14 captures or reflects the plasma generated in the reaction chamber 15 to prevent leakage to the manifold 16.

A TMP (Turbo Molecular Pump) and a DP (Dry Pump) (both not shown) are connected to the exhaust pipe 17, and these pumps evacuate and depressurize the inside of the chamber 11. Specifically, DP depressurizes the inside of the chamber 11 from atmospheric pressure to a medium vacuum state (for example, 1.3 × 10 Pa (0.1 Torr) or less), and TMP cooperates with the DP to medium vacuum in the chamber 11. The pressure is reduced to a high vacuum state (for example, 1.3 × 10 ⁻³ Pa (1.0 × 10 ⁻⁵ Torr or less)) that is lower than the state. The pressure in the chamber 11 is controlled by an APC valve (not shown).

  A lower high frequency power source 18 is connected to the susceptor 12 in the chamber 11 via a lower matching unit 19, and the lower high frequency power source 18 supplies predetermined high frequency power to the susceptor 12. Thereby, the susceptor 12 functions as a lower electrode. The lower matching unit 19 reduces the reflection of the high frequency power from the susceptor 12 to maximize the supply efficiency of the high frequency power to the susceptor 12.

  An electrostatic chuck 21 having an electrostatic electrode plate 20 therein is disposed on the susceptor 12. The electrostatic chuck 21 has a shape in which an upper disk-shaped member having a diameter smaller than that of the lower disk-shaped member is stacked on a lower disk-shaped member having a certain diameter. The electrostatic chuck 21 is made of ceramic. When the wafer W is placed on the susceptor 12, the wafer W is disposed on the upper disk-shaped member in the electrostatic chuck 21.

  In the electrostatic chuck 21, a DC power source 22 is electrically connected to the electrostatic electrode plate 20. When a positive DC high voltage is applied to the electrostatic electrode plate 20, a negative potential is generated on the surface of the wafer W on the electrostatic chuck 21 side (hereinafter referred to as “back surface”), and the electrostatic electrode plate 20 and the electrostatic electrode plate 20. A potential difference is generated between the back surfaces of the wafer W, and the wafer W is attracted and held on the upper disk-shaped member in the electrostatic chuck 21 by the Coulomb force or the Johnson-Rahbek force resulting from the potential difference.

  An annular focus ring 23 is placed on the electrostatic chuck 21 so as to surround the attracted and held wafer W. The focus ring 23 is made of a conductive member, for example, silicon, and converges plasma toward the surface of the wafer W in the reaction chamber 15 to improve the efficiency of plasma etching.

  Further, for example, an annular refrigerant chamber 24 extending in the circumferential direction is provided inside the susceptor 12. A low-temperature refrigerant such as cooling water or Galden (registered trademark) is circulated and supplied to the refrigerant chamber 24 via a refrigerant pipe 25 from a chiller unit (not shown). The susceptor 12 cooled by the low-temperature refrigerant cools the wafer W and the focus ring 23 via the electrostatic chuck 21.

  A plurality of heat transfer gas supply holes 26 are opened in a portion of the upper surface of the upper disk-shaped member of the electrostatic chuck 21 where the wafer W is adsorbed and held (hereinafter referred to as “adsorption surface”). The plurality of heat transfer gas supply holes 26 are connected to a heat transfer gas supply unit (not shown) via a heat transfer gas supply line 27, and the heat transfer gas supply unit is helium (He) gas as a heat transfer gas. Is supplied to the gap between the adsorption surface and the back surface of the wafer W through the heat transfer gas supply hole 26. The helium gas supplied to the gap between the suction surface and the back surface of the wafer W effectively transfers the heat of the wafer W to the electrostatic chuck 21.

  A shower head 28 is disposed on the ceiling of the chamber 11 so as to face the susceptor 12. An upper high frequency power supply 30 is connected to the shower head 28 via an upper matching unit 29. The upper high frequency power supply 30 supplies a predetermined high frequency power to the shower head 28, so that the shower head 28 functions as an upper electrode. The function of the upper matching unit 29 is the same as the function of the lower matching unit 19 described above.

The shower head 28 includes a ceiling electrode plate 32 having a large number of gas holes 31, a cooling plate 33 that detachably supports the ceiling electrode plate 32, and a lid 34 that covers the cooling plate 33. Further, a buffer chamber 35 is provided inside the cooling plate 33, and a processing gas introduction pipe 36 is connected to the buffer chamber 35. The shower head 28 supplies a gas supplied from the processing gas introduction pipe 36 to the buffer chamber 35, for example, a processing gas or a cleaning gas, into the reaction chamber 15 through the gas hole 31. In the present embodiment, for example, a fluorocarbon (C _x F _y ) gas is supplied into the reaction chamber 15 as the processing gas, and ammonia gas, for example, is supplied into the reaction chamber 15 as the cleaning gas.

  In the substrate processing apparatus 10, by supplying high frequency power to the susceptor 12 and the shower head 28 and supplying high frequency power into the reaction chamber 15, the processing gas supplied from the shower head 28 in the reaction chamber 15 is supplied. Plasma etching is performed on the wafer W with a high density plasma.

  The operation of each component of the substrate processing apparatus 10 described above is controlled by a CPU of a control unit (not shown) provided in the substrate processing apparatus 10 according to a program corresponding to plasma etching.

  In the conventional substrate processing method, plasma etching is performed on the wafer W using a processing gas containing a fluorocarbon-based gas, the gas in the reaction chamber 15 is exhausted, and then ammonia gas is supplied into the reaction chamber 15. Therefore, the hydrogen fluoride generated by the chemical reaction between water and fluorine atoms derived from the processing gas, the remaining water (water that has not reacted with the fluorine atoms), and the ammonia gas supplied thereafter are formed on the silicon on the wafer W. As a result of the reaction, silicon hydroxide remains on the surface of the wafer W as a foreign substance (see the above formulas (1) and (2)).

  In contrast, in the present embodiment, chlorine gas is supplied into the reaction chamber 15 after plasma etching using a fluorocarbon-based gas.

  Next, the substrate processing method according to the present embodiment will be described.

  FIG. 2 is a flowchart of the substrate processing method according to the present embodiment.

In FIG. 2, first, the shower head 28 supplies a processing gas containing carbon tetrafluoride (CF ₄ ) gas into the reaction chamber 15 that accommodates the wafer W (step S51). Further, the shower head 28 or the like supplies high-frequency power into the reaction chamber 15 to generate plasma from the processing gas, and the plasma performs plasma etching on the polysilicon layer on the wafer W. Here, when water is present on the wafer W, as described above, hydrogen fluoride is easily generated by a chemical reaction between water and fluorine atoms derived from the processing gas.

  Next, the shower head 28 supplies chlorine gas into the reaction chamber 15 (step S52). When the chlorine gas reaches the wafer W and the chlorine gas comes into contact with hydrogen fluoride and the remaining water on the wafer W, chemical reactions shown in the following formulas (3) and (4) occur.

2HF + Cl ₂ → 2HCl + F ₂ (3)
2H ₂ O + Cl ₂ → 2HCl + O ₂ (4)
The boiling point of hydrogen chloride (HCl) produced by the chemical reaction shown in the above formulas (3) and (4) is significantly lower than the boiling points of hydrogen fluoride and water (see FIG. 3), and hydrogen chloride is generated. Since it is immediately vaporized, the hydrogen chloride is easily exhausted from the reaction chamber 15 via the exhaust chamber 16 and the exhaust pipe 17 (step S53). Thereafter, the shower head 28 supplies ammonia gas into the reaction chamber 15 (step S54), and after cleaning the wafer W using the ammonia gas, the present process is terminated.

  According to the substrate processing method of the present embodiment, chlorine gas is supplied into the reaction chamber 15 after plasma etching using carbon tetrafluoride. At this time, as shown in the above formulas (3) and (4), the produced hydrogen fluoride and the remaining water are each converted into hydrogen chloride. Since the hydrogen chloride is immediately vaporized, the hydrogen chloride can be easily removed from the wafer W by exhausting the gas in the reaction chamber 15. Therefore, hydrogen fluoride and water, which are the cause of the generation of foreign matter, are not present on the wafer W, and even if ammonia gas is supplied into the reaction chamber 15 after that, the above equations (1) and (2) The reaction shown in the figure does not occur, and the generation of foreign matters such as silicon hydroxide on the wafer W can be suppressed. Further, since it is not necessary to irradiate the wafer W with vacuum ultraviolet light in order to remove fluorine atoms on the wafer W, alteration of the photoresist film on the wafer W can be prevented. Therefore, it is possible to suppress a decrease in the yield of semiconductor devices manufactured from the wafer W.

  Further, as described above, the boiling point of hydrogen chloride is sufficiently low, and the generated hydrogen chloride is easily vaporized even at room temperature (about 20 ° C.), for example. In this embodiment, plasma etching is used. Since hydrogen chloride is generated on the wafer W at a high temperature, the hydrogen chloride can be reliably vaporized.

  Furthermore, if the temperature of the wafer W during the supply of chlorine gas is higher than the boiling point of hydrogen fluoride, not only the produced hydrogen chloride but also the remaining hydrogen fluoride can be vaporized. Here, since the boiling point of hydrogen fluoride is about 19.5 ° C. (see FIG. 3), particularly when the temperature of the wafer W during the supply of chlorine gas is maintained at 20 ° C. or higher, it is ensured. Hydrogen chloride and hydrogen fluoride can be removed from the wafer W, and the generation of foreign matter on the wafer W can be more reliably suppressed. Further, if the temperature of the wafer W at the time of supplying chlorine gas is 100 ° C. or higher, the remaining water can be evaporated. From the above, it is preferable to heat the wafer W in advance before supplying chlorine gas into the reaction chamber 15 from the viewpoint of reliably suppressing the generation of foreign matter.

  Note that in the above-described embodiment, the case where carbon tetrafluoride gas and ammonia gas are used has been described. However, in the case where a gas containing other fluorine atoms and a gas containing other nitrogen atoms are used, other fluorine atoms are used. By supplying chlorine gas after the treatment with the gas containing atoms and before the treatment with the gas containing other nitrogen atoms, the same effect as described above can be obtained.

  Next, examples of the present invention will be specifically described.

  First, the influence of the supply of chlorine gas on the generation of foreign matter on the wafer W was examined.

Example 1
First, in the substrate processing apparatus 10, a processing gas containing carbon tetrafluoride gas was supplied into the reaction chamber 15 that accommodates the wafer W. Thereafter, the pressure in the reaction chamber 15 was set to a vacuum pressure, high frequency power was supplied to generate plasma from the processing gas, and plasma etching was performed on the polysilicon layer on the wafer W using the plasma. Next, after the pressure in the reaction chamber 15 was set to atmospheric pressure and chlorine gas was sufficiently supplied into the reaction chamber 15, the gas in the reaction chamber 15 was exhausted from the exhaust pipe 17. Subsequently, ammonia gas is supplied into the reaction chamber 15 and the wafer W is cleaned using the ammonia gas. Then, the wafer W is taken out of the chamber 11 and the surface thereof is observed with an electron microscope. Was confirmed not to exist.

Comparative Example 1
Next, in the substrate processing apparatus 10, the wafer W was cleaned by supplying ammonia gas without supplying chlorine gas into the reaction chamber 15. Other conditions were the same as in Example 1. After cleaning, the wafer W was taken out of the chamber 11 and the surface thereof was observed with an electron microscope. As a result, it was confirmed that foreign matter remained on the surface of the wafer W.

  As described above, when the wafer W having the polysilicon layer subjected to the plasma etching by the plasma generated from the carbon tetrafluoride gas is cleaned with the ammonia gas, the chlorine gas is applied to the wafer W after the plasma etching and before the cleaning. It has been found that when supplied, the generation of foreign matter on the wafer W can be suppressed.

  Next, the influence of the temperature of the wafer W when supplying chlorine gas on the generation of foreign matter on the wafer W was examined. In Example 2 and Comparative Example 2 described below, chlorine gas is applied to the wafer W that has been subjected to plasma etching using plasma generated from carbon tetrafluoride gas so that hydrogen fluoride is excessively present on the wafer W. Before supplying the wafer W with a single gas of hydrogen fluoride gas or a mixed gas of hydrogen fluoride gas and nitrogen gas.

Example 2
First, a single gas of hydrogen fluoride gas was supplied toward the wafer W subjected to plasma etching under atmospheric pressure conditions. Thereafter, the wafer W was heated at 200 ° C. to supply a mixed gas of hydrogen fluoride gas and nitrogen gas. Next, after supplying chlorine gas toward the wafer W, ammonia gas was supplied toward the wafer W. Then, when the surface of the wafer W was observed with the electron microscope, it was confirmed that the foreign material does not exist in the wafer W surface.

Comparative Example 2
Next, without heating the wafer W, a mixed gas of hydrogen fluoride gas and nitrogen gas was supplied toward the wafer W subjected to plasma etching. Other conditions were the same as in Example 2. Then, when the surface of the wafer W was observed with the electron microscope, it was confirmed that the foreign material remains on the wafer W surface.

  As described above, even if hydrogen fluoride is excessively present on the wafer W, the wafer W is supplied by supplying chlorine gas toward the wafer W heated to 200 ° C. or higher, which is sufficiently higher than the boiling point of hydrogen chloride. It was found that the occurrence of foreign matter on the top can be reliably suppressed.

It is sectional drawing which shows schematic structure of the substrate processing apparatus with which the substrate processing method which concerns on embodiment of this invention is applied. It is a flowchart of the substrate processing method which concerns on this Embodiment. It is a graph which shows the relationship between the boiling point and molecular weight of hydrogen fluoride, hydrogen chloride, and hydrogen bromide.

Explanation of symbols

W wafer 10 substrate processing apparatus 11 chamber 12 susceptor 15 reaction chamber 17 exhaust pipe 28 shower head

Claims (7)

A substrate processing method for processing a substrate in a processing container,
A fluorine supply step for supplying a gas containing fluorine atoms into the processing vessel;
A chlorine supply step for supplying chlorine gas into the processing vessel;
And a nitrogen supply step of supplying a gas containing nitrogen atoms into the processing vessel.   The substrate processing method according to claim 1, wherein the temperature of the substrate is maintained at 20 ° C. or higher in the chlorine supply step.   The substrate processing method according to claim 1, wherein in the chlorine supply step, the substrate is heated to 200 ° C. or more.   The substrate processing method according to claim 1, wherein the substrate is subjected to plasma processing in the fluorine supply step.   The substrate processing method according to claim 1, wherein plasma is not used in the chlorine supply step.   The substrate processing method according to claim 1, wherein the gas containing fluorine atoms is a fluorocarbon-based gas.   The substrate processing method according to claim 1, wherein the gas containing nitrogen atoms is ammonia gas.

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