JP2009194206A - Solid-state image pickup device and its manufacturing method, and electronic information equipment - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To further decrease steps between each area to further improve frame-like sensitivity unevenness and color unevenness at a periphery of an effective pixel area. <P>SOLUTION: The solid-state image pickup device includes: an OB area B for acquiring a black reference signal at the periphery of the effective pixel area A with a plurality of light-receiving parts 2 for generating signal charge by photoelectrically converting incident light arranged; a first light-shielding film 7 on a charge transferring electrode 5 for reading out the signal charge and charge-transferring it, and an insulating film 8 further provided on it; and a second light-shielding film 9A formed on the insulating film 8 of the OB region B. Only the insulating film formed in the OB area B is thin-filmed, and the second light-shielding film 9A separately formed on the insulating film 8 in the OB area B by the separate step with at least one composing material and an identical material layer (TiN layer) composing the second light-shielding film 9A is thin-filmed. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a solid-state imaging device configured by a semiconductor element that photoelectrically converts image light from a subject and images the same, and a manufacturing method thereof, for example, a digital video camera and a digital device using the solid-state imaging device as an image input device in an imaging unit. The present invention relates to an electronic information device such as a digital camera such as a still camera, an image input camera such as a front door monitoring camera or an in-vehicle camera, a scanner, a facsimile, and a camera-equipped mobile phone device.

  In the conventional solid-state imaging device described above, CCDs (charge coupled devices) are two-dimensionally arranged in the imaging unit, and after the imaging unit and its peripheral circuit unit are formed, dark current that causes image noise is suppressed. Annealing is performed in a hydrogen atmosphere.

  FIG. 9 is a plan view schematically showing a conventional solid-state imaging device using a CCD (charge coupled device) in the imaging unit.

  In FIG. 9, in the conventional solid-state imaging device 100, an OB (optical black = optical black) region B surrounds the periphery of the effective pixel region A in the central portion, and charge transfer in the effective pixel region A is further performed in the peripheral portion. The planar structure is provided with a peripheral circuit region C in which peripheral circuits for controlling driving and the like are provided. By using the black reference data from the OB area B as a reference value and outputting the image data from the effective pixel area A as a signal, dark current noise components that cause image noise are removed.

  An example of the cross-sectional laminated structure of the main part of the solid-state imaging device 100 is shown in FIGS. 10 (a) and 10 (b).

  FIG. 10A is a longitudinal sectional view showing the vicinity of the boundary between the effective pixel region A of the conventional solid-state imaging device 100 and the surrounding OB region B, and FIG. 3 is a longitudinal sectional view showing a main part of a peripheral circuit area C around. In the following description, the same reference numerals are assigned to the same regions as those in FIG.

10 (a) and 10 (b), the conventional solid-state imaging device 100 has a plurality of light receiving and photoelectrically converting incident light on the surface side of the semiconductor substrate 101 in the effective pixel region A and the OB region B. The light receiving units 102 are arranged in a two-dimensional array in the matrix direction, and a charge transfer region 103 is provided to read out and transfer the signal charges photoelectrically converted by the respective light receiving units 102. A charge transfer electrode 105 is formed on the region including the charge transfer region 103 via a gate insulating film 104. On the other hand, on the peripheral circuit region C side, the polysilicon layer or the metal layer 105a before the charge transfer electrode 105 is formed remains.
Subsequently, a first light-shielding film 107 is formed on the charge transfer electrode 105 via an insulating film 106, and an insulating film 108 is further formed on the entire surface of the substrate.

Thereafter, on the OB region B side on the insulating film 108, a metal layer 109 constituting the second light shielding film is formed so as to shield all light from the OB region B. The metal layer 109 constituting the second light shielding film is used as a metal wiring layer (metal layer 109) of the peripheral circuit formed in the same process and the same layer on the peripheral circuit region C side. Further, a passivation film 110 that prevents intrusion of oxygen and moisture such as a plasma nitride film is formed on the entire surface of the insulating film 108 and the metal layer 109. By performing heat treatment using the passivation film 110, sintering treatment with residual hydrogen is performed in order to suppress dark current on the substrate surface.
The surface of the passivation film 110 has a lens shape that is recessed on the light receiving unit 102 side, reflecting the light receiving unit 102 and the charge transfer electrode 105 below the surface. In the effective pixel region A, condensing inner lenses 111 are formed so as to correspond to the light receiving portions 102 at the recessed positions.
A transparent planarizing film 112 for planarizing the surface is formed on the passivation film 110 and the inner lens 111. An on-chip color filter layer 113 is formed on the planarizing film 112, and an on-chip lens 115 is formed thereon via a planarizing film 114.
As described above, in the conventional solid-state imaging device 100, in order to obtain the required light shielding characteristics, the stacked structure of the metal layer 109 constituting the first light shielding film 107 and the second light shielding film in the OB region B is used twice. ing.

  As described above, when the light shielding film is formed in the OB region B in a double manner, the metal layer 109 constituting the second light shielding film is formed by the same process and the same layer as the surrounding metal wiring. The film thickness is increased, and a large step is generated at the boundary between the effective pixel area A and the OB area B. As a result, the subsequent formation failure (tilt and deformation) of the inner lens 111 and the flattening by the flattening film 112 on the inner lens 111 cannot be sufficiently performed, and the level difference still remains, and the film thickness and shape of the color filter 113 thereafter. Or the thickness and shape of the on-chip lens 115 on the on-chip lens 115 are also non-uniform, and the frame-like color unevenness or the like at the position on the display screen corresponding to the peripheral portion of the effective pixel region. Sensitivity unevenness is caused, and depending on the degree, imaging failure occurs.

  In order to solve this, for example, Patent Documents 1 to 3 have been proposed as shown in FIGS. In FIG. 11 to FIG. 13, the light receiving unit 102 and the charge transfer region 103 shown in FIG. 10 are omitted because they are not particularly related here.

In Patent Document 1, as shown in FIG. 11, the step is reduced by etching only the insulating film 108 under the metal layer 109 constituting the second light-shielding film in the OB region B which is an optical black region. As described above, the insulating film 108 in the OB region B is thinned by forming the insulating film 108 and then masking the effective pixel region A and the peripheral circuit region C with the photoresist film, so that only the insulating film 108 in the OB region B is dried. By etching, a part of the insulating film 108 is etched away in the film thickness direction to form a thin insulating film 108a. In this way, the step between the surface of the insulating film 108 in the effective pixel region A and the surface of the metal layer 109 constituting the second light-shielding film in the OB region B is reduced, and the insulating film 108 in the OB region B is thinned. It can be reduced by the amount.
In Patent Document 2, as shown in FIG. 12, not only the insulating film 108a under the metal layer 109 constituting the second light-shielding film in the OB region B, but also the metal in the peripheral circuit region C for more flatness. The insulating film 108a under the wiring (metal layer 109) is also thinned by etching from the insulating film 108, thereby reducing the level difference at the boundary between the effective pixel region A and the OB region B.

In Patent Document 3, as shown in FIG. 13, the metal wiring (metal layer 109) in the peripheral circuit region C needs to be formed with a film thickness corresponding to the necessary wiring capacity. However, the light shielding film in the OB region B is thinner. Therefore, it is effective by thinning only the Al—Cu layer (metal layer) from the metal layer 109 constituting the second light-shielding film halfway to form the metal layer 109A constituting the second light-shielding film. The level difference at the boundary between the pixel area A and the OB area B is further reduced.
JP 2004-241524 A JP 2001-196571 A JP 2002-076322 A

  However, in the above-mentioned Patent Documents 1 to 3, since the step still remains at the boundary between the effective pixel region A and the OB region B, the rear inner lens in the vicinity of the effective pixel region A and the OB region B and the boundary. The film thickness and shape of each member are formed unevenly in the formation of the color filter 113 during the formation of the on-chip layer after the formation of the insulating film 112 and the insulating film 112, and the on-chip lens formation process. As a result, incident light incident / condensed from the on-chip lens 115 and the inner lens 111 in the peripheral portion of the effective pixel region A is opened in the light receiving unit 102 (photoelectric conversion unit; photodiode unit) and the first light shielding film 107. Depending on the degree, frame-like sensitivity unevenness (non-sensitivity) and color non-uniformity (color non-uniformity) may occur due to changes in color characteristics due to abnormal film thickness of the color filter 113, etc. May cause imaging defects.

  The present invention solves the above-described conventional problems, and can further improve frame-like sensitivity unevenness and color unevenness in the peripheral portion of the effective pixel region by further reducing the stepped portion between the regions. An object of the present invention is to provide a solid-state imaging device that can be used, a manufacturing method thereof, and an electronic information device such as a mobile phone with a camera in which the solid-state imaging device is provided in an imaging unit as an image input device.

  The solid-state imaging device of the present invention is provided with an OB region for obtaining a black reference signal around an effective pixel region in which a plurality of light receiving units for photoelectrically converting incident light to generate a signal charge is disposed, In a solid-state imaging device in which a first light-shielding film is further provided on a charge transfer electrode for reading and transferring the signal charge, and a second light-shielding film is provided on the insulating film in the OB region. Only the insulating film formed in the OB region is thinned, and is formed separately on the insulating film in the OB region by a separate process with the same material layer as at least one constituent material constituting the second light shielding film. Thus, the second light-shielding film is thinned, and the above object is achieved.

  The solid-state imaging device of the present invention is provided with an OB region for obtaining a black reference signal around an effective pixel region in which a plurality of light receiving units for photoelectrically converting incident light to generate a signal charge is disposed, In a solid-state imaging device in which a first light-shielding film is further provided on a charge transfer electrode for reading and transferring the signal charge, and a second light-shielding film is provided on the insulating film in the OB region. Only the insulating film formed in the OB region is thinned, and at least one constituent layer constituting the second light shielding film is removed on the insulating film in the OB region to reduce the thickness. This achieves the above object.

  Further, in the solid-state imaging device of the present invention, a peripheral circuit region is provided around the OB region, and the metal wiring layer of the peripheral circuit region has a laminated structure in which the metal layer is sandwiched between upper and lower barrier metal layers, and the OB region The second light-shielding film is made of the same material as at least one constituent layer.

  Furthermore, at least one of the lower barrier metal layer, the middle metal layer, and the upper barrier metal layer in the solid-state imaging device of the present invention is removed to make the second light shielding film thinner.

  Furthermore, in the solid-state imaging device of the present invention, the metal wiring layer is newly formed on at least one constituent layer constituting the metal wiring layer on the insulating film from which only the metal wiring layer in the OB region has been removed.

  Furthermore, in the solid-state imaging device of the present invention, the lower barrier metal layer is a laminate of Ti layer / TiN layer, the middle metal layer is an Al—Cu layer, and the upper metal layer is a TiN layer.

  Furthermore, in the solid-state imaging device of the present invention, at least one of an inner lens, a color filter, and an on-chip lens is provided on the insulating film in the effective pixel region.

  Furthermore, in the solid-state imaging device of the present invention, a taper or a roundness is formed at an end portion of the second light shielding film constituting a step at the boundary between the effective pixel region and the OB region.

  In the solid-state imaging device of the present invention, a peripheral circuit region is provided around an effective pixel region in which a plurality of light receiving units for photoelectrically converting incident light to generate a signal charge is provided, and the signal charge is transferred to the charge. The effective pixel region and the peripheral circuit region when the number of multilayer wiring layers provided on each charge transfer electrode in the effective pixel region and the number of multilayer wiring layers in the peripheral circuit region are different The surface of the insulating film on the multilayer wiring layer having a step is tapered so as to alleviate the step generated at the boundary between the two and the above object.

  In the solid-state imaging device manufacturing method of the present invention, an OB region for obtaining a black reference signal is provided around an effective pixel region in which a plurality of light receiving portions for photoelectrically converting incident light to generate a signal charge is provided. A peripheral circuit region is provided around the OB region, and a first light-shielding film is further provided on the charge transfer electrode for reading and transferring the signal charge, and an insulating film is further provided on the charge transfer electrode. In a method for manufacturing a solid-state imaging device in which a second light-shielding film is provided on an insulating film, a metal wiring layer film forming step for forming a metal wiring layer on the OB region and the peripheral circuit region on the insulating film; Removing the metal wiring layer in the OB region and forming at least one constituent layer of the metal wiring layer as the second light shielding film material on the insulating film in which the insulating film in the OB region is thinned Film forming step, second light-shielding film and the periphery Those having a second light-shielding film metal wiring forming step of forming metal wiring of the road area, the objects can be achieved.

  In the solid-state imaging device manufacturing method of the present invention, an OB region for obtaining a black reference signal is provided around an effective pixel region in which a plurality of light receiving portions for photoelectrically converting incident light to generate a signal charge is provided. A peripheral circuit region is provided around the OB region, and a first light-shielding film is further provided on the charge transfer electrode for reading and transferring the signal charge, and an insulating film is further provided on the charge transfer electrode. In the method for manufacturing a solid-state imaging device in which the second light-shielding film is provided on the insulating film, a metal wiring layer constituting a part of the metal wiring layer is formed on the insulating film in the OB region and the peripheral circuit region. A step of forming a part of the metal wiring layer, and removing the part of the metal wiring layer in the OB region and forming the second light shielding film material and the metal wiring on the insulating film in which the insulating film in the OB region is thinned As a layer, the remaining constituent layer of the metal wiring layer is formed 2 light-shielding film / metal wiring layer film forming step, and a second light-shielding film / metal wiring forming step for forming the second light-shielding film and the metal wiring in the peripheral circuit region. Achieved.

  In the solid-state imaging device manufacturing method of the present invention, an OB region for obtaining a black reference signal is provided around an effective pixel region in which a plurality of light receiving portions for photoelectrically converting incident light to generate a signal charge is provided. A peripheral circuit region is provided around the OB region, and a first light-shielding film is further provided on the charge transfer electrode for reading and transferring the signal charge, and an insulating film is further provided on the charge transfer electrode. In the manufacturing method of the solid-state imaging device in which the second light-shielding film is provided on the insulating film, only the insulating film formed in the OB region is thinned, and a metal wiring layer is formed on the insulating film in the OB region and the peripheral circuit region. And forming the second light-shielding film material and the metal on the film from which all or a part of the metal wiring layer constituting the whole or a part of the OB region is removed and part of the metal wiring layer of the OB region is removed. A structure in which the metal wiring layer remains as a wiring layer A second light-shielding film / metal wiring layer forming step for forming the remaining constituent layer when there is a layer, and a second light-shielding film / metal wiring forming for forming the second light-shielding film and the metal wiring in the peripheral circuit region And the above object is achieved thereby.

  The method for manufacturing a solid-state imaging device according to the present invention further includes a step of forming at least one of an inner lens, a color filter, and an on-chip lens on the insulating film in the effective pixel region.

  Furthermore, in the method for manufacturing a solid-state imaging device according to the present invention, the step is reduced by forming a taper or a round at the end of the second light shielding film in the OB region that forms a step with the insulating film by isotropic etching. And a step relief process.

  In the electronic information device of the present invention, the solid-state imaging device of the present invention is provided as an image input device in an imaging unit, thereby achieving the above object.

  With the above configuration, the operation of the present invention will be described below.

  In the present invention, only the insulating film formed in the OB region is thinned, and on the insulating film in the OB region, at least one constituent material constituting the second light shielding film is separately formed in a separate process. The formed second light-shielding film is thinned, or at least one constituent layer constituting the second light-shielding film is removed and thinned on the insulating film in the OB region.

  As a result, it is possible to significantly reduce the step at the boundary between the effective pixel region and the OB region while ensuring the thickness of the light shielding film having the light shielding property in the OB region. This can improve the uniformity of the film thickness and shape of the inner lens, flattening film, color filter, on-chip lens, etc. in later on-chip formation, and improve the image quality by improving the sensitivity unevenness and color unevenness. Figured.

  Further, as a problem of the above-described conventional configuration, when the insulating film is thinned by etching like the insulating films of Patent Documents 1 and 2, it is necessary to prevent the etching removal portion from reaching the first light shielding film. Further, like the second light-shielding film in Patent Document 3, the second light-shielding film itself is etched partway through the Al—Cu layer to reduce the thickness, thereby reducing the level difference. In these cases, the amount of etching removal must be controlled by the etching time, and the control of the remaining film after etching between lots is difficult, resulting in poor film thickness uniformity.

  In order to solve this problem, the Al-Cu layer is reduced from the Al-Cu layer to the Ti layer / TiN layer when the level difference is reduced, as compared with the conventional method of reducing the thickness of the insulating film on the OB region and the thickness of the Al wiring film by etching. Etching end point detector (EPD; end point detector) can accurately perform end point detection processing such as etching processing, so that variation between lots can be controlled, and the step thickness reduction film thickness on the OB area B can be reduced. Uniformity can be improved.

  As described above, according to the present invention, only the insulating film formed in the OB region is thinned, and the same material layer as the at least one constituent material constituting the second light shielding film is separated on the insulating film in the OB region. The second light-shielding film is formed separately in the process and is thinned, or at least one constituent layer constituting the second light-shielding film is removed on the insulating film in the OB region and thinned. The step portion in the above is further reduced, and the frame-like sensitivity unevenness and color unevenness in the peripheral portion of the effective pixel region can be further improved.

  Embodiments 1 to 4 of the solid-state imaging device and the manufacturing method thereof according to the present invention and Embodiment 5 of electronic information equipment using the solid-state imaging device and the manufacturing method thereof as an image input device in an imaging unit will be described below with reference to the drawings.

(Embodiment 1)
FIG. 1A is a longitudinal sectional view showing the vicinity of the boundary between the effective pixel area A and the surrounding OB area B in Embodiment 1 of the solid-state imaging device of the present invention, and FIG. 3 is a longitudinal sectional view showing a main part of a peripheral circuit region C around an OB region B. FIG.

  In FIG. 1A and FIG. 1B, the solid-state image pickup device 20 of the first embodiment is a CCD solid-state image pickup device, and a plurality of pieces that receive incident light and perform photoelectric conversion on the surface side of the semiconductor substrate 1. Are arranged in a two-dimensional array in the matrix direction, and a charge transfer region 3 is provided for reading out and transferring the signal charges photoelectrically converted by each light receiving unit 2. A charge transfer electrode 5 is formed on a region including the charge transfer region 3 via a gate insulating film 4. On the other hand, the charge transfer electrode 5 remains the polysilicon layer or the metal layer 5a before the charge transfer electrode 5 is formed on the peripheral circuit region C side. Further, a first light-shielding film 7 is formed on the charge transfer electrode 5 via an insulating film 6, and an insulating film 8 is formed on the entire surface of the substrate thereon. Further, on the OB (optical black = optical black) region B side on the insulating film 8, a metal layer 9A as a second light shielding film is formed so as to shield all light from the OB region B.

  The metal layer 9A constituting the second light shielding film includes a metal layer 9 (not shown) as the second light shielding film in the OB region B and a metal layer 9 (Ti layer / TiN as the metal wiring in the peripheral circuit region C). After the layer structure of the layer 9a / Al-Cu layer 9b / TiN layer 9c) is formed as the same layer in the same process, only the metal layer 9 on the OB region B side is removed by etching, and then TiN sputtering is performed thereon. Thereafter, a normal metal wiring patterning is performed using a photoresist film to form a metal layer 9A (TiN layer) as a second light shielding film.

  Further, a passivation film 10 for preventing intrusion of oxygen and moisture such as a plasma nitride film is formed on the entire surface of the insulating film 8, the metal layer 9A, and the substrate on the metal layer 9. The surface of the passivation film 10 is a lens-like surface that is recessed on the light receiving unit 2 side, reflecting the step between the light receiving unit 2 and the charge transfer electrode 5 below the passivation film 10. In the effective pixel region A, condensing inner lenses 11 are formed so as to correspond to the recessed positions and for each light receiving unit 2.

  A transparent flattening film 12 for flattening the surface is formed on the passivation film 10 and the inner lens 11. An on-chip color filter layer 13 is formed on the planarizing film 12, and an on-chip lens 15 is formed thereon via a planarizing film 14.

A method for manufacturing the solid-state imaging device 20 having the above configuration will be described.
First, the first light-shielding film 7 is formed on the charge transfer electrode 5 via the insulating film 6, and the insulating film 8 is formed thereon.

  Next, a contact hole (not shown) is formed in the insulating film 8 to connect the upper and lower wirings. Further, in the OB region B and the peripheral circuit region C, a metal layer 9 is formed thereon with a thickness of about 150 nm. After sequentially forming a Ti layer / TiN layer 9a, an Al—Cu layer 9b having a thickness of 800 nm, and a TiN stack 9c having a thickness of 45 nm, a metal layer on the OB region B as shown in FIG. All of 9 is etched away. Subsequently, only on the OB region B, a TiN sputtering process is performed on the insulating film 8 from which the metal layer 9 has been removed, and then a metal layer 9A (TiN layer) as a second light shielding film has a thickness of 150 nm. The film is formed at about ˜300 nm (here, 200 nm).

Further, a passivation film 10 such as a plasma nitride film is formed on the entire surface of the substrate on the insulating film 8 and the metal layer 9A as the second light shielding film, as shown in FIG.
Further, in the effective pixel region A, a condensing inner lens 11 is formed at a position corresponding to the light receiving portion 2 on the passivation film 10 as shown in FIG. On these, a planarizing film 12, a color filter layer 13, a planarizing film 14, and an on-chip lens 15 for condensing are formed in this order.

  As described above, according to the first embodiment, since only the TiN layer serving as the second light shielding film is formed on the OB area B, the boundary between the effective pixel area and the OB area is ensured while ensuring the light shielding property of the OB area B. It is possible to greatly reduce the level difference at As a result, the uniformity of the film thickness and shape of the inner lens 11, the planarizing film 12, the color filter, the on-chip lens 15 and the like in the subsequent on-chip formation can be improved. Can be improved.

  Also, compared with the conventional technique of thinning the insulating film on the OB region B and thinning the Al wiring film by etching, the etching process of the Al layer / TiN layer 9a from the Al-Cu layer 9b at the time of step reduction is performed. Since it can be processed by an etching end point detector (EPD; end point detector), it becomes possible to control the variation between lots and improve the uniformity of the step-reduced film thickness on the OB region B.

(Embodiment 2)
FIG. 5A is a longitudinal sectional view showing the vicinity of the boundary between the effective pixel region A and the surrounding OB region B in the second embodiment of the solid-state imaging device of the present invention, and FIG. 3 is a longitudinal sectional view showing a main part of a peripheral circuit region C around an OB region B. FIG.

  5A and 5B, in the solid-state imaging device 21 of the second embodiment, a plurality of light receiving units 2 that receive incident light and perform photoelectric conversion are arranged in a matrix direction on the surface side of the semiconductor substrate 1. A charge transfer region 3 is provided which is arranged in a two-dimensional manner and reads out the signal charge photoelectrically converted by each light receiving unit 2 and transfers the charge. A charge transfer electrode 5 is formed on the semiconductor region including the charge transfer region 3 via a gate insulating film 4. On the other hand, the charge transfer electrode 5 remains the polysilicon layer or the metal layer 5a before the charge transfer electrode 5 is formed on the peripheral circuit region C side. Further, a first light-shielding film 7 is formed on the charge transfer electrode 5 via an insulating film 6, and an insulating film 8 is formed on the entire surface of the substrate thereon. Further, on the OB (optical black = optical black) region B side on the insulating film 8, a metal layer 9B as a second light shielding film is formed so as to shield all light from the OB region B.

  The metal layer 9B constituting the second light shielding film is formed by sputtering the Ti layer / TiN layer 9a in the OB region B and the peripheral circuit region C, and then sputtering the Al—Cu layer 9b. Only the Al-Cu layer 9b in the OB region B is removed by etching while watching the peripheral wavelength using an etching end point detector (EPD), and the etching is stopped at the Ti layer / TiN layer 9a. A TiN laminate 9c is formed thereon by sputtering, and a normal metal wiring patterning is performed using a photoresist film, so that a metal layer 9B (Ti layer / TiN layer 9a / TiN layer) as a second light shielding film in the OB region B is formed. 9c) and a metal layer 9 (Ti layer / TiN layer 9a laminated structure / Al-Cu layer 9b / iN layer 9c) to form a.

  Further, a passivation film 10 for preventing intrusion of oxygen and moisture such as a plasma nitride film is formed on the insulating film 8, the metal layer 9B as the second light shielding film, and the entire surface of the substrate on the metal layer 9. . The surface of the passivation film 10 is a lens-like surface that is recessed on the light receiving unit 2 side, reflecting the step between the light receiving unit 2 and the charge transfer electrode 5 below the passivation film 10. In the effective pixel region A, condensing inner lenses 11 are formed so as to correspond to the recessed positions and for each light receiving unit 2.

  A transparent flattening film 12 for flattening the surface is formed on the passivation film 10 and the inner lens 11. An on-chip color filter layer 13 is formed on the planarizing film 12, and an on-chip lens 15 is formed thereon via a planarizing film 14.

A method for manufacturing the solid-state imaging device 21 having the above-described configuration will be described.
First, the first light-shielding film 7 is formed on the charge transfer electrode 5 via the insulating film 6, and the insulating film 8 is formed thereon.

Next, a contact hole (not shown) is formed in the insulating film 8 to connect the upper and lower wirings. Further, in the OB region B and the peripheral circuit region C, the Ti layer / TiN layer 9a is formed on the insulating film 8. A laminated film is formed by sputtering at a thickness of 150 nm, and an Al—Cu layer 9b is further formed thereon by sputtering at a thickness of 800 nm.
Subsequently, only the Al—Cu layer 9b in the OB region B is removed by etching using the etching end point detector (EPD) while watching the peripheral wavelength, and the etching is stopped at the position of the Ti layer / TiN layer 9a.

Thereafter, a TiN laminate 9c is formed by sputtering on the Ti layer / TiN layer 9a in the OB region B and the Al-Cu layer 9b in the peripheral circuit region C, and a normal metal wiring is formed by a photoresist film. Patterning is performed to form a metal layer 9B (Ti layer / laminated structure of TiN layer 9a / TiN layer 9c) as the second light-shielding film in the OB region B, and at the same time, the metal layer 9 as the metal wiring in the peripheral circuit region C (Ti layer / TiN layer 9a laminated structure / Al—Cu layer 9b / TiN layer 9c) can be formed with a thickness sufficient for charge transfer.
Further, a passivation film 10 such as a plasma nitride film is formed on the entire surface of the substrate on these insulating films 8 and on the metal layer 9B as the second light shielding film.
Further, a condensing inner lens 11 is formed at a position corresponding to the light receiving portion 2 on the passivation film 10 in the effective pixel region A. On these, a planarizing film 12, a color filter layer 13, a planarizing film 14, and an on-chip lens 15 for condensing are formed in this order.

  As described above, according to the third embodiment, since only the Ti layer / TiN layer 9a laminated film / TiN layer 9c serving as the second light shielding film is formed on the OB region B, the film necessary for light shielding as the OB region B. The step at the boundary between the effective pixel region A and the OB region B can be significantly reduced while ensuring the thickness (here, 200 nm). As a result, the uniformity of the film thickness and shape of the inner lens 11, the planarizing film 12, the color filter, the on-chip lens 15 and the like in the subsequent on-chip formation can be improved. Can be improved.

In addition, the etching process of the Al—Cu layer 9b at the time of the step reduction is compared with the thinning of the insulating film on the OB region B and the thinning of the Al wiring film in the prior art by the etching end point detector (EPD; Since the processing can be performed accurately by the end point detector), it is possible to control the variation between lots, and the uniformity of the step-reduced film thickness on the OB region B can be further improved.
(Embodiment 3)
FIG. 6A is a longitudinal sectional view showing the vicinity of the boundary between the effective pixel area A and the surrounding OB area B in Embodiment 3 of the solid-state imaging device of the present invention, and FIG. 3 is a longitudinal sectional view showing a main part of a peripheral circuit region C around an OB region B. FIG.

  6A and 6B, in the solid-state imaging device 22 according to the second embodiment, a plurality of light receiving units 2 that receive incident light and perform photoelectric conversion are arranged in a matrix direction on the surface side of the semiconductor substrate 1. A charge transfer region 3 is provided which is arranged in a two-dimensional manner and reads out the signal charge photoelectrically converted by each light receiving unit 2 and transfers the charge. A charge transfer electrode 5 is formed on the semiconductor region including the charge transfer region 3 via a gate insulating film 4. On the other hand, the charge transfer electrode 5 remains the polysilicon layer or the metal layer 5a before the charge transfer electrode 5 is formed on the peripheral circuit region C side. Further, a first light-shielding film 7 is formed on the charge transfer electrode 5 with an insulating film 6 interposed therebetween. Further, an insulating film 8 is formed on the effective pixel region A side, and OB (optical black = optical On the black (B) region B side, the insulating film 8a is thinner than the insulating film 8. Further, on the OB region B side on the insulating film 8a, a metal layer 9C as a second light shielding film is formed so as to shield all light from the OB region B.

  In the formation process of the metal layer 9C (Ti layer / TiN layer 9a / Al-Cu layer 9b / TiN layer 9c) as the metal wiring in the peripheral circuit region C, the metal layer 9C constituting the second light shielding film After the Ti layer / TiN stack 9a is formed by barrier metal sputtering on the entire surface of the OB region B and the peripheral circuit region C, the barrier metal (Ti / TiN stack 9a) only in the OB region B is removed by etching to reduce the level difference. Then, the insulating film 8 of the underlying layer is thinned, and then the Al—Cu layer 9b and the TiN layer 9c are sequentially sputtered to form a metal layer 9C (Al—Cu layer 9b / TiN layer 9c) as a second light shielding film. ) And a metal layer 9 (Ti layer / TiN layer 9a / Al—Cu layer 9b / TiN layer 9c) as a metal wiring in the peripheral circuit region C is formed.

  Further, a passivation film 10 for preventing intrusion of oxygen and moisture, such as a plasma nitride film, is formed on the insulating film 8, the metal layer 9C as the second light shielding film, and the entire surface of the substrate on the metal layer 9. . Inner lenses 11 are formed on the passivation film 10 at respective positions corresponding to the light receiving unit 2.

  A transparent flattening film 12 for flattening the surface is formed on the passivation film 10 and the inner lens 11. An on-chip color filter layer 13 is formed on the planarizing film 12, and an on-chip lens 15 is formed thereon via a planarizing film 14.

A method for manufacturing the solid-state imaging device 22 having the above-described configuration will be described.
First, the first light-shielding film 7 is formed on the charge transfer electrode 5 via the insulating film 6, and the insulating film 8 is formed thereon.

  Next, a contact hole (not shown) is formed in the insulating film 8 to connect the upper and lower wirings. Further, in the OB region B and the peripheral circuit region C, the Ti layer / TiN layer 9a of the metal layer 9 is formed. Then, the Ti layer / TiN layer 9a is removed by etching only on the OB region B using a photoresist film, and the insulating film 8 underneath is formed in the middle. Etching is removed.

  Subsequently, on the thinned insulating film 8 in the OB region B and on the Ti layer / TiN layer 9a in the peripheral circuit region A, an Al—Cu layer 9b having a thickness of 800 nm and a TiN stack 9c having a thickness of 45 nm are further formed. The metal layer 9C (Al—Cu layer 9b / TiN stack 9c) as the second light shielding film in the OB region B is formed and the metal as the metal wiring in the peripheral circuit region A is formed in sequence. Layer 9 (Ti layer / TiN layer 9a / Al-Cu layer 9b / TiN layer 9c) is formed. Further, a passivation film 10 such as a plasma nitride film is formed on the whole surface of the insulating film 8, the metal layer 9C as the second light shielding film, and the metal layer 9 as the metal wiring.

  Further, in the effective pixel region A, each inner lens 11 is formed at a position corresponding to each light receiving portion 2 on the passivation film 10. On these, a planarizing film 12, a color filter layer 13, a planarizing film 14, and an on-chip lens 15 for condensing are formed in this order.

  As described above, according to the third embodiment, the effective pixel region A and the metal layer 9C (Al—Cu layer 9b / TiN stack 9c) as the second light shielding film in the OB region B and the insulating film 8 are reduced in thickness. The level difference at the boundary of the OB region B can be further reduced. By reducing this step, it is possible to improve the uniformity of the film thickness and shape of the inner lens 11, the planarizing film 12, the color filter 13 and the on-chip lens 15 in later on-chip formation, Color unevenness can be improved and image quality can be improved.

  That is, in the third embodiment, not only the step is reduced by reducing the thickness of the insulating film 8 in the OB region B, but the barrier film (Ti / TiN film 9a) that is the constituent film of the second light shielding film in the OB region B is deleted. By reducing the thickness of the second light-shielding film itself, it is possible to further reduce the level difference, and to improve the frame-like color unevenness and sensitivity unevenness in the periphery of the effective pixel region A. .

In the third embodiment, a step is formed at the boundary between the metal layer 9C (Al—Cu layer 9b / TiN stack 9c) as the second light shielding film in the OB region B and the surface of the insulating film 8 in the effective pixel region A. However, by tapering or rounding the step, the step at the boundary between the effective pixel region A and the OB region B is further reduced, and the inner lens 11 and the planarizing film 12 thereafter are reduced. Further, the uniformity of film thickness and shape of the color filter 13 and the on-chip lens 15 can be further improved, the sensitivity unevenness and the color unevenness can be further improved, and the image quality can be further improved. Similarly, the step of the boundary between the metal layer 9A of the first embodiment and the metal layer 9B of the second embodiment and the surface of the insulating film 8 in the effective pixel region A is tapered or rounded. As a result, the step at the boundary between the effective pixel area A and the OB area B is further reduced, and the film thickness and shape of the inner lens 11, the planarizing film 12, the color filter 13, the on-chip lens 15 and the like thereafter. Can be further improved, sensitivity unevenness and color unevenness can be further improved, and image quality can be further improved. As a method of tapering or rounding the level difference in this case, a mask formation step and an isotropic etching step using a photoresist film are added and side etching is included so that the boundary portions of the metal layers 9A to 9C The corners at can be removed to form a taper or roundness.
(Embodiment 4)
In the fourth embodiment, a multilayer wiring layer (in the peripheral circuit region C around the effective pixel region A in the central portion) (a multilayer wiring layer (for example, two layers or three layers) in the effective pixel region A of the CMOS solid-state imaging device). When the number of layers is, for example, 4 layers or 5 layers), a large step occurs at the boundary between the effective pixel region A and the peripheral circuit region C around the effective pixel region A. Similar to the case of the step, there is an inconvenience of frame-like color unevenness and sensitivity unevenness in the periphery of the effective pixel region A, but the second light-shielding film is formed diagonally (tapered as in the first to third embodiments). Rather than forming the step, the surface of the insulating film having a step can be tapered to further reduce the step, and at the boundary between the effective pixel region A and the peripheral circuit region C. Frame-like color unevenness and feeling due to non-uniform film thickness and shape of each member It is possible to improve the non-uniformity. This will be specifically described with reference to FIG.

  FIG. 7 is a longitudinal cross-sectional view showing an exemplary configuration of a main part of the CMOS solid-state imaging device of the fourth embodiment.

  As shown in FIG. 7, in the CMOS solid-state imaging device 50 according to the fourth embodiment, a light receiving portion 52 that is a photodiode as a photoelectric conversion portion is formed as a surface layer of the semiconductor substrate 51. Adjacent to the light receiving portion 52, a gate electrode 53 as an extraction electrode is provided via a gate insulating film on the charge transfer portion of the charge transfer transistor for transferring signal charges to the floating diffusion portion FD. . Further, the signal charge transferred to the floating diffusion unit FD is converted into a voltage for each light receiving unit 52, amplified according to the converted voltage, and read out as an imaging signal for each pixel unit. Yes.

Above the gate electrode 53, a first insulating film 54 is formed as a circuit wiring portion of the readout circuit, a first wiring 55 is formed thereon, and a second insulating film 56 is formed thereon, A second wiring 57 is formed thereon, and similarly, a third insulating film 58, a third wiring 59, and a fourth insulating film 60 are sequentially formed thereon in this order.
Further, in the peripheral circuit region C, the fourth wiring 61 is formed on the fourth insulating layer 60, and the fifth insulating film 62 is formed thereon. Here, there is a step between the surface of the fourth insulating layer 60 on the effective pixel region A side and the surface of the fifth insulating film 62 in the peripheral circuit region C. In order to reduce this step, the surface is made continuous with a taper. A passivation film 63 is formed thereon.

  On the passivation film 63 on the effective pixel region A side, color filters 64 of R, G, and B colors arranged for each light receiving portion 52 are formed, and the light receiving portion 52 is interposed thereon via a planarizing film 65. A microlens 66 for condensing light is formed.

  According to the fourth embodiment, at the boundary between the effective pixel region A and the peripheral circuit region C, the surfaces of the fourth insulating layer 60 and the fifth insulating film 62 are connected with a taper, so that the level difference is reduced. The uniformity of film thickness and shape of the color filter 64 and the on-chip lens 66 in the subsequent on-chip formation can be improved, and the frame-like color unevenness and sensitivity unevenness in the peripheral portion of the effective pixel region A can be improved. Can be improved, and the image quality can be improved.

(Embodiment 5)
FIG. 8 is a block diagram illustrating a schematic configuration example of an electronic information device using, as an imaging unit, a solid-state imaging device including any of the solid-state imaging elements according to Embodiments 1 to 4 of the present invention as Embodiment 5 of the present invention. is there.

  In FIG. 8, an electronic information device 90 according to the fifth embodiment includes a solid-state imaging device 91 that obtains a color image signal by performing various signal processing on an imaging signal from any of the solid-state imaging devices according to the first to fourth embodiments. A memory unit 92 such as a recording medium capable of recording data after processing a color image signal from the solid-state imaging device 91 for recording, and a predetermined signal for displaying the color image signal from the solid-state imaging device 91 The display means 93 such as a liquid crystal display device that can be displayed on a display screen such as a liquid crystal display screen after processing, and the color image signal from the solid-state imaging device 91 can be subjected to communication processing after predetermined signal processing for communication. And a communication means 94 such as a transmission / reception device. The electronic information device 90 is not limited to this, and in addition to the solid-state imaging device 91, at least one of a memory unit 92, a display unit 93, a communication unit 94, and an image output device 95 such as a printer. You may have.

  As described above, the electronic information device 90 includes, for example, a digital camera such as a digital video camera and a digital still camera, an in-vehicle camera such as a surveillance camera, a door phone camera, and an in-vehicle rear surveillance camera, and a video phone camera. An electronic device having an image input device such as an image input camera, a scanner, a facsimile, a camera-equipped mobile phone device and a personal digital assistant (PDA) is conceivable.

  Therefore, according to the fifth embodiment, based on the color image signal from the solid-state imaging device 91, it can be displayed on the display screen, or it can be printed out on the paper by the image output device 95. (Printing), communicating this as communication data in a wired or wireless manner, performing a predetermined data compression process in the memory unit 92 and storing it in a good manner, or performing various data processings satisfactorily Can do.

  Although not particularly described in the first to third embodiments, only the insulating film formed in the OB region is thinned, and at least the second light-shielding film is formed on the insulating film in the OB region. The second light-shielding film is formed in the same material layer as another constituent material in a separate process and thinned, or at least one constituent layer constituting the second light-shielding film is removed on the insulating film in the OB region, and the thin film If it is realized, the object of the present invention for further improving the frame-shaped sensitivity unevenness and color unevenness in the peripheral portion of the effective pixel region can be achieved by further reducing the stepped portion between the regions. .

  As mentioned above, although this invention has been illustrated using preferable Embodiment 1-5 of this invention, this invention should not be limited and limited to this Embodiment 1-5. It is understood that the scope of the present invention should be construed only by the claims. It is understood that those skilled in the art can implement an equivalent range based on the description of the present invention and the common general technical knowledge from the description of specific preferred embodiments 1 to 5 of the present invention. Patents, patent applications, and documents cited herein should be incorporated by reference in their entirety, as if the contents themselves were specifically described herein. Understood.

  The present invention relates to a solid-state imaging device configured by a semiconductor element that photoelectrically converts image light from a subject and images the same, and a manufacturing method thereof, for example, a digital video camera and a digital device using the solid-state imaging device as an image input device in an imaging unit. In the field of electronic information equipment such as digital cameras such as still cameras, image input cameras such as entrance monitoring cameras and in-vehicle cameras, scanners, facsimiles, and camera-equipped mobile phone devices, the level difference between each area is further reduced. As a result, the frame-shaped sensitivity unevenness and color unevenness in the periphery of the effective pixel region can be further improved.

(A) is a longitudinal cross-sectional view which shows the boundary part vicinity of the effective pixel area A and the surrounding OB area | region B in Embodiment 1 of the solid-state image sensor of this invention, (b) is the OB area | region B of FIG. 3 is a longitudinal sectional view showing a main part of a peripheral circuit area C around. It is a principal part longitudinal cross-sectional view which shows the metal layer removal process of the OB area | region B in the manufacturing method of the solid-state image sensor which concerns on Embodiment 1 of this invention. It is a principal part longitudinal cross-sectional view which shows the 2nd light shielding film and the passivation film formation process in the manufacturing method of the solid-state image sensor which concerns on Embodiment 1 of this invention. It is a principal part longitudinal cross-sectional view which shows the inner lens formation process of the effective pixel area | region in the manufacturing method of the solid-state image sensor which concerns on Embodiment 1 of this invention. (A) is a longitudinal cross-sectional view which shows the boundary part vicinity of the effective pixel area A and the surrounding OB area | region B in Embodiment 2 of the solid-state image sensor of this invention, (b) is the OB area | region B of FIG. 3 is a longitudinal sectional view showing a main part of a peripheral circuit area C around. (A) is a longitudinal cross-sectional view which shows the boundary part vicinity of the effective pixel area A and the surrounding OB area | region B in Embodiment 3 of the solid-state image sensor of this invention, (b) is the OB area | region B of FIG. 3 is a longitudinal sectional view showing a main part of a peripheral circuit area C around. It is a longitudinal cross-sectional view which shows the principal part structural example of the CMOS type solid-state image sensor of this Embodiment 4. It is a block diagram which shows the example of schematic structure of the electronic information apparatus which used the solid-state imaging device containing either of the solid-state image sensor of Embodiment 1-4 of this invention as Embodiment 5 of this invention for an imaging part. It is a top view which shows typically the conventional solid-state image sensor which used CCD (charge-coupled device) for the image pick-up part. (A) is a longitudinal cross-sectional view which shows the vicinity of the boundary part of the effective pixel area | region A of the conventional solid-state image sensor, and the surrounding OB area | region B, (b) is a peripheral circuit area | region around the OB area | region B It is a longitudinal cross-sectional view which shows the principal part of C. (A) is a longitudinal cross-sectional view which shows the boundary part vicinity of the effective pixel area A of the conventional solid-state image sensor currently disclosed by patent document 1, and its surrounding OB area | region B, (b) is the OB. 3 is a longitudinal sectional view showing a main part of a peripheral circuit region C around a region B. FIG. (A) is a longitudinal cross-sectional view which shows the boundary part vicinity of the effective pixel area A of the conventional solid-state image sensor currently disclosed by patent document 2, and the surrounding OB area | region B, (b) is the OB. 3 is a longitudinal sectional view showing a main part of a peripheral circuit region C around a region B. FIG. (A) is a longitudinal cross-sectional view which shows the boundary part vicinity of the effective pixel area A of the conventional solid-state image sensor currently disclosed by patent document 3, and its surrounding OB area | region B, (b) is the OB. 3 is a longitudinal sectional view showing a main part of a peripheral circuit region C around a region B. FIG.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Semiconductor substrate 2 Light-receiving part 3 Charge transfer area | region 4 Gate insulating film 5 Charge transfer electrode 5a Polysilicon layer or metal layer 9 Metal layer of metal wiring 9A Metal layer (TiN layer) of 2nd light shielding film
9B Metal layer of second light shielding film (Ti layer / TiN layer / TiN layer)
9C Metal layer of second light-shielding film (Al—Cu layer / TiN layer)
9a Laminated structure of Ti layer / TiN layer 9b Al-Cu layer 9c TiN layer 9c
DESCRIPTION OF SYMBOLS 10 Passivation film 11 Inner lens 12 Flattening film 13 Color filter layer 14 Flattening film 15 On-chip lens 20, 21, 22 Solid-state image sensor A Effective pixel area B OB area C Peripheral circuit area 50 CMOS type solid-state image sensor 51 Semiconductor substrate 52 Photodetector 53 Gate Electrode 54 First Insulating Film 55 First Wiring 56 Second Insulating Film 57 Second Wiring 58 Third Insulating Film 59 Third Wiring 60 Fourth Insulating Film 61 Fourth Wiring 62 Fifth Insulating Film 63 Passivation Film 64 Color filter 65 Flattening film 66 Micro lens 90 Electronic information equipment 91 Solid-state imaging device 92 Memory unit 93 Display means 94 Communication means 95 Image output device

Claims (15)

An OB area for obtaining a black reference signal is provided around an effective pixel area in which a plurality of light-receiving portions for photoelectrically converting incident light to generate signal charges is provided, and the signal charges are read and transferred. In the solid-state imaging device in which the first light-shielding film is further provided on the charge transfer electrode and the second light-shielding film is provided on the insulating film in the OB region.
Only the insulating film formed in the OB region is thinned, and is formed separately on the insulating film in the OB region by a separate process with the same material layer as at least one constituent material constituting the second light shielding film. A solid-state imaging device in which the second light-shielding film is thinned. An OB area for obtaining a black reference signal is provided around an effective pixel area in which a plurality of light-receiving portions for photoelectrically converting incident light to generate signal charges is provided, and the signal charges are read and transferred. In the solid-state imaging device in which the first light-shielding film is further provided on the charge transfer electrode and the second light-shielding film is provided on the insulating film in the OB region.
A solid-state imaging device in which only the insulating film formed in the OB region is thinned, and at least one constituent layer constituting the second light-shielding film is removed on the insulating film in the OB region.   A peripheral circuit region is provided around the OB region, and the metal wiring layer in the peripheral circuit region has a laminated structure in which the metal layer is sandwiched between upper and lower barrier metal layers, and constitutes a second light shielding film in the OB region. The solid-state imaging device according to claim 1, wherein the solid-state imaging device is formed of the same material as at least one constituent layer.   4. The solid-state imaging device according to claim 3, wherein at least one of a lower barrier metal layer, a middle metal layer, and an upper barrier metal layer is removed to reduce the thickness of the second light shielding film.   4. The solid-state imaging device according to claim 3, wherein the solid-state imaging device is newly formed by at least one constituent layer constituting the metal wiring layer on the insulating film from which only the metal wiring layer in the OB region is removed.   5. The solid-state imaging device according to claim 3, wherein the lower barrier metal layer is a laminate of a Ti layer / TiN layer, the middle metal layer is an Al—Cu layer, and the upper metal layer is a TiN layer. .   The solid-state imaging device according to claim 1, wherein at least one of an inner lens, a color filter, and an on-chip lens is provided on the insulating film in the effective pixel region.   3. The solid-state imaging device according to claim 1, wherein a taper or a roundness is formed at an end portion of the second light shielding film that forms a step at a boundary between the effective pixel region and the OB region.   A peripheral circuit region is provided around an effective pixel region in which a plurality of light receiving units for photoelectrically converting incident light to generate a signal charge is provided, and each effective pixel region for transferring the signal charge is charged. When the number of multilayer wiring layers provided on the charge transfer electrode is different from the number of multilayer wiring layers in the peripheral circuit region, a step generated at the boundary between the effective pixel region and the peripheral circuit region is generated. A solid-state imaging device in which a surface of an insulating film on a multilayer wiring layer having a step is tapered so as to relax. An OB region for obtaining a black reference signal is provided around an effective pixel region in which a plurality of light receiving units for photoelectrically converting incident light to generate a signal charge is provided, and a peripheral circuit region is provided around the OB region. A first light-shielding film is further provided on the charge transfer electrode for reading and transferring the signal charge, and an insulating film is provided thereon; and a second light-shielding film is provided on the insulating film in the OB region. In the manufacturing method of the solid-state imaging device,
A metal wiring layer film forming step for forming a metal wiring layer on the insulating film in the OB region and the peripheral circuit region;
Removing the metal wiring layer in the OB region and forming at least one constituent layer of the metal wiring layer as the second light shielding film material on the insulating film in which the insulating film in the OB region is thinned A film material forming step;
A method for manufacturing a solid-state imaging device, comprising: a second light-shielding film / metal wiring forming step of forming the second light-shielding film and metal wiring in the peripheral circuit region. An OB region for obtaining a black reference signal is provided around an effective pixel region in which a plurality of light receiving units for photoelectrically converting incident light to generate a signal charge is provided, and a peripheral circuit region is provided around the OB region. A first light-shielding film is further provided on the charge transfer electrode for reading and transferring the signal charge, and an insulating film is provided thereon; and a second light-shielding film is provided on the insulating film in the OB region. In the manufacturing method of the solid-state imaging device,
A partial metal wiring layer film forming step of forming a metal wiring layer constituting a part of the metal wiring layer on the insulating film in the OB region and the peripheral circuit region;
A component layer in which the metal wiring layer remains as the second light shielding film material and the metal wiring layer on the insulating film in which only a part of the metal wiring layer in the OB region is removed and the insulating film in the OB region is thinned A second light-shielding film / metal wiring layer film forming step for forming a film;
A method for manufacturing a solid-state imaging device, comprising: a second light-shielding film / metal wiring forming step of forming the second light-shielding film and metal wiring in the peripheral circuit region. An OB region for obtaining a black reference signal is provided around an effective pixel region in which a plurality of light receiving units for photoelectrically converting incident light to generate a signal charge is provided, and a peripheral circuit region is provided around the OB region. A first light-shielding film is further provided on the charge transfer electrode for reading and transferring the signal charge, and an insulating film is provided thereon; and a second light-shielding film is provided on the insulating film in the OB region. In the manufacturing method of the solid-state imaging device,
Only the insulating film formed in the OB region is thinned, and on the insulating film in the OB region and the peripheral circuit region, all or part of the metal wiring layer constituting the metal wiring layer is formed, and
When there is a constituent layer in which the metal wiring layer remains as the second light-shielding film material and the metal wiring layer on the film from which all or part of the metal wiring layer is removed in the OB region, A second light-shielding film / metal wiring layer film forming step for forming a film;
A method for manufacturing a solid-state imaging device, comprising: a second light-shielding film / metal wiring forming step of forming the second light-shielding film and metal wiring in the peripheral circuit region.   The solid-state imaging device according to claim 10, further comprising a step of forming at least one of an inner lens, a color filter, and an on-chip lens on the insulating film in the effective pixel region.   The step of mitigating a step by forming a taper or a round at the end of the second light shielding film in the OB region constituting the step with the insulating film by isotropic etching. The manufacturing method of the solid-state image sensor in any one.   An electronic information device in which the solid-state imaging device according to claim 1 is provided in an imaging unit as an image input device.